Photoetching process optimization method of flat panel display

Abstract

The invention discloses a photoetching process optimization method of a flat-panel display. The photoetching process optimization method comprises the following steps: completing first photomask manufacturing by using test patterns with different specifications and dimensions along with a current product; collecting exposure data of the first photomask under a plurality of different exposure energy conditions, and establishing a process window model; by using the process window model, giving the optimal exposure energy of the next product and a revised photomask layout under the condition that the optimal exposure energy is increased by 10-50%, and finishing the manufacturing of a second photomask along with the product; performing an exposure test on the second photomask according to each exposure energy condition, collecting and sorting each exposure energy and a critical dimension value of the wafer after the exposure energy is changed by a preset proportion, and obtaining a plurality of linear relational expressions about the change of the critical dimension along with the exposure energy; and according to the critical dimension value and the slope value of each linear relation, obtaining a relation curve graph of the slope of the linear relation along with the change of the exposure energy for selecting the final exposure energy.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor integrated circuit manufacturing, and in particular to a method for optimizing the photolithography process of a flat panel display. Background Art

[0002] Compared with the high requirements of the IC (Integrated Circuit) industry, due to the large size of FPD (Flat Panel Display) itself and the backward lithography equipment, the display quality requirements are not as strict as mobile phone chips. However, with the introduction of LTPO (Temperature Polysilicon Oxide) flexible screens, customers have put forward higher requirements on the quality of display screens, forcing panel manufacturers to continuously improve existing process problems to improve product quality.

[0003] The exposure process is to use light to project the pattern on the mask onto the photoresist through an optical system to achieve pattern transfer. It is one of the important processes in the photolithography process in integrated circuit manufacturing. Its essence is the physical and chemical reaction process of the photoresist. The exposure dose (also called exposure energy, which is the product of exposure intensity and time) is its main process parameter. The size of the exposure energy will directly affect the final size of the pattern.

[0004] Since the design of each product is not exactly the same, the line width of the online monitoring points is also inconsistent. During actual exposure, the exposure energy needs to be adjusted according to the monitoring points. However, in the existing process methods, the critical dimension loss (CDloss) of the current product is compensated based on the CD (Critical Dimension, referred to as CD, indicating the critical dimension of the graphic) measured by the previous product. Therefore, when the monitoring point changes, it will inevitably affect other graphics, increasing the instability of actual production. For this common problem, panel design (ACD) engineers have always lacked an effective solution and can only make adjustments one by one to meet production needs as much as possible, which greatly reduces production efficiency and increases production costs. Summary of the invention

[0005] In order to solve the defects of the prior art, the object of the present invention is to provide a method for optimizing the photolithography process of a flat panel display, which reduces the critical dimension fluctuation of the wafer by increasing the exposure energy.

[0006] In order to achieve the above-mentioned object, the present invention provides a method for optimizing the photolithography process of a flat panel display, comprising:

[0007] Use test patterns of different sizes to complete the first mask production according to the current product;

[0008] collecting exposure data of the first photomask under a plurality of different exposure energy conditions, and establishing a process window model;

[0009] Using the process window model, the optimal exposure energy for the next product and the corrected mask layout under the condition of increasing the optimal exposure energy by 10% to 50% are given, and the second mask is produced following the product;

[0010] Performing an exposure test on the second photomask under each exposure energy condition, collecting and arranging the critical dimension values ​​of the wafer after each exposure energy and its preset change ratio, and obtaining a plurality of linear relationship equations about the critical dimension changing with the exposure energy;

[0011] According to the critical dimension value and the slope value of each linear relationship, a relationship curve diagram of the slope of the linear relationship changing with the exposure energy is obtained, which is used to select the final exposure energy condition.

[0012] Furthermore, the method also includes: using a test pattern generation tool, referring to the types of patterns in a real layout, and designing a group of test patterns of different specifications and sizes.

[0013] Furthermore, the plurality of different exposure energy conditions are evenly distributed along both sides of the optimal exposure energy, with the optimal exposure energy as the center and with 1 mj or 5% exposure energy change as the step length.

[0014] Furthermore, the step of collecting exposure data of the first mask under a plurality of different exposure energy conditions and establishing a process window model further includes:

[0015] Applying for wafer online, exposing the first photomask for each of the exposure energy conditions;

[0016] Collect wafer data after exposure under different exposure energy conditions and organize them into the format required for modeling;

[0017] According to the wafer data, exposure machine light source file, photoresist material information, film layer information, and exposure mask layout file, a process window model is established through software fitting to predict the change in key dimensions of the graphic after exposure energy changes.

[0018] Furthermore, the step of using the process window model to provide the optimal exposure energy for the next product and a corrected mask layout under the condition of increasing the optimal exposure energy by 10% to 50% further includes:

[0019] The exposure energy of the process window model is changed to increase the optimal light energy exposure by 10%, 20%, 30%, and 50%, and the optimal exposure energy condition is continued to be used to obtain five process window models with different exposure energies, which are used to guide the correction program to correct the mask layout and obtain the corrected mask layout under different exposure energy conditions.

[0020] Furthermore, the step of performing an exposure test on the second mask under each exposure energy condition, collecting and collating the critical dimension values ​​of the wafer under each exposure energy and its preset proportional change, and obtaining a linear relationship between the corresponding critical dimension and the exposure energy, further includes:

[0021] Using the same number of wafers as the number of different exposure energy conditions, exposure is performed for the mask layout corrected under each exposure energy condition;

[0022] The key dimension values ​​of the same pattern on the mask under each exposure energy and its variation of ±10% are collected, and the linear relationship between the key dimension corresponding to each exposure energy and the exposure energy is obtained.

[0023] Furthermore, the step of obtaining a relationship curve diagram of the slope versus exposure energy according to the slope of each linear relationship further includes:

[0024] Record the slope value of each linear relationship;

[0025] According to the wafer critical dimension and the slope value, a relationship curve diagram of the slope of the linear relationship changing with the exposure energy is obtained.

[0026] To achieve the above-mentioned purpose, the present invention also provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor is used to execute the computer program stored in the memory to implement the above-mentioned method for optimizing the lithography process of a flat panel display.

[0027] To achieve the above object, the present invention further provides a computer-readable storage medium, wherein the storage medium stores a computer program, and the computer program is loaded and executed by a processor to implement the above-mentioned method for optimizing the photolithography process of a flat panel display.

[0028] The photolithography process optimization method for a flat panel display provided by the present invention has the following beneficial effects compared with the prior art:

[0029] The first photomask is produced following the current product using test patterns of different specifications and sizes; the exposure data of the first photomask under multiple different exposure energy conditions are collected, and a process window model is established; the process window model is used to provide the optimal exposure energy for the next product and a modified photomask layout under the optimal exposure energy condition with an increase of 10% to 50%, and the second photomask is produced following the product; the second photomask is exposed to each of the exposure energy conditions, and the critical dimension values ​​of the wafer after each exposure energy and its preset change ratio are collected and sorted, and multiple linear relationship equations on the variation of the critical dimension with the exposure energy are obtained; according to the critical dimension value and the slope value of each linear relationship equation, a relationship curve graph of the slope of the linear relationship equation with the exposure energy is obtained, which is used to select the final exposure energy condition, appropriately increase the exposure energy, reduce the fluctuation of the critical dimension, and improve the process stability.

[0030] Other features and advantages of the present invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0032] Figure 1 A flow chart of a method for optimizing a photolithography process for a flat panel display according to an embodiment of the present invention;

[0033] Figure 2 A schematic diagram of a test pattern according to an embodiment of the present invention;

[0034] Figure 3 Schematic diagram of mask and corresponding PW (±10%) contour under different exposure energy conditions according to an embodiment of the present invention;

[0035] Figure 4 Schematic diagram of the relationship between CD and Dose according to an embodiment of the present invention;

[0036] Figure 5 is a schematic diagram of a curve showing the relationship between slope and dose according to an embodiment of the present invention;

[0037] Figure 6 FIG. 1 is a schematic diagram of the structure of an electronic device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0038] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0039] Embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present invention are shown in the accompanying drawings, it should be understood that the present invention can be implemented in various forms and should not be construed as being limited to the embodiments described herein, which are instead provided for a more thorough and complete understanding of the present invention. It should be understood that the drawings and embodiments of the present invention are only for exemplary purposes and are not intended to limit the scope of protection of the present invention.

[0040] The term "including" and its variations used herein are open inclusions, i.e., "including but not limited to". The term "based on" means "based at least in part on". The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments". The relevant definitions of other terms will be given in the following description.

[0041] It should be noted that the concepts of “first”, “second”, etc. may be mentioned in the present invention only to distinguish different devices, components or parts, and are not used to limit the order or interdependence of the functions performed by these devices, components or parts.

[0042] It should be noted that the modifications of "one" and "plurality" mentioned in the present invention are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more". "Plurality" should be understood as two or more.

[0043] Example 1

[0044] In an embodiment of the present invention, a method for optimizing the photolithography process of a flat panel display is provided, comprising: using test patterns of different specifications and sizes to complete the production of a first photomask following the current product; collecting exposure data of the first photomask under multiple different exposure energy conditions, and establishing a process window model; using the process window model to provide the optimal exposure energy of the next product and a corrected photomask layout under the optimal exposure energy condition with an increase of 10% to 50%, and completing the production of a second photomask following the product; performing an exposure test on the second photomask under each of the exposure energy conditions, collecting and arranging the critical dimension values ​​of the wafer after each exposure energy and its preset change ratio, and obtaining multiple linear relationship equations on the variation of the critical dimension with the exposure energy; and obtaining a relationship curve graph of the slope of the linear relationship equation with the variation of the exposure energy based on the critical dimension value and the slope value of each of the linear relationship equations, for selecting the final exposure energy condition.

[0045] Figure 11 is a flow chart of a method for optimizing the photolithography process of a flat panel display according to an embodiment of the present invention. The method for optimizing the photolithography process of a flat panel display according to the present invention will be described in detail below with reference to the accompanying drawings.

[0046] In step 101, a first photomask is produced using test patterns of different specifications and sizes in accordance with the current product.

[0047] In this embodiment, a test pattern generation tool is used to design a set of test patterns of different sizes with reference to the types of patterns in the real layout, and the first mask is produced following product delivery. Figure 2 As shown, LS: line space&2Bar&3Bar is the basic test pattern.

[0048] In step 102, a wafer is requested and a plurality of exposure requirements with different exposure energies are proposed.

[0049] In this embodiment, multiple exposure requirements with different exposure energies are proposed mainly to collect different PW (process window) data and establish a PW model (process window model). The present invention takes the optimal exposure energy as the center, takes 1mj or 5% dose change as the step (step length), and evenly distributes on both sides of the optimal exposure energy. Multiple exposure requirements are proposed to collect wafer data after exposure under different exposure energy conditions, and the Bossung Curves relationship (Bossung Curve: refers to the relationship curve between the width of the critical dimension (CD) after exposure and development in the reactive resist and the different exposure doses and defocus amounts, also known as the Poisson curve) can be obtained to establish a process window model that can predict the change in the critical dimension of the graphics after exposure after the exposure energy changes. For example, after the first mask is returned to the factory, multiple wafers are requested online, and taking the online best exposure energy (best dose) of 35mj as an example, five exposure energy (dose) requirements are respectively proposed, namely 31.5mj, 33.25mj, 35mj, 36.75mj, and 38mj (dose changes ±10% & ±5%, and the best exposure energy is 35mj). The best exposure energy is the energy value that can get the closest to the target size on the selected best exposure focus plane.

[0050] In step 103, according to each exposure requirement, the exposure data after exposure is collected respectively, and a process window model is established.

[0051] In this embodiment, for the same photomask, the wafer critical dimensions (wafer CD) after exposure at different exposure energies (dose variation ±10% & ±5%, and optimal exposure energy) are selected and organized into the format required for modeling; at the same time, the exposure machine light source file; photoresist material information, mainly photoresist thickness, N value (refractive index to light), K value (extinction coefficient); film layer information, including thickness and N / K value; and the exposed photomask layout file are also required. Based on these exposure data, through software fitting, a process window model that can predict the changes in the critical dimensions of the graphics after exposure energy changes is established.

[0052] In step 104, for the next product, the test pattern is continuously put into use, and the established process window model is used to provide the best exposure energy and a modified mask layout under the condition of increasing the best energy by 10% to 50%, and the second mask is produced following the product.

[0053] In this embodiment, it is known that the above process window model can be used to predict the critical dimensions of wafers after exposure at different exposure energies. The exposure energy of the process window model is adjustable. By changing the exposure energy of the process window model to increase the optimal light energy exposure by 10%, 20%, 30%, and 50%, and not changing the exposure energy, that is, using the optimal exposure energy condition, a total of five process window models are used to guide Recip (correction program) to correct the layout, and obtain the mask layout under different exposure energies. Figure 3 As shown in the figure, the mask size corrected by the process window model under different exposure energy conditions is different. In principle, the larger the exposure energy, the larger the mask size. Because the exposure energy increases, the mask size must be increased to keep the critical size after exposure to meet the requirements. That is, using the process window model under five different exposure energy conditions, the same target layout (design pattern) is corrected to obtain five sets of mask layouts with different sizes.

[0054] In step 105, for the second mask, exposure tests are performed according to the mask layout corrected under each exposure energy condition, and critical dimension values ​​of the wafer under each exposure energy and its preset ratio are collected.

[0055] In this embodiment, after the second mask is completed and returned to the factory, 5 wafers are applied, and the variables are controlled. The modified mask layout is exposed under the above 5 exposure energy conditions (31.5mj, 33.25mj, 35mj, 36.75mj, 38mj), and the critical dimension (CD) value of the same pattern on the mask under different exposure energy conditions is collected. Taking 38mj split as an example, the CD value under 38mj and its ±10% exposure energy change is collected, and statistics are made. The previous five groups of splits (exposure requirements) all collect the CD value of the same pattern on the mask according to this process: that is, the CD value under 31.5mj and its ±10% exposure energy change is collected, the CD value under 33.25mj and its ±10% exposure energy change is collected, the CD value under 35mj and its ±10% exposure energy change is collected, and the CD value under 36.75mj and its ±10% exposure energy change is collected.

[0056] In step 106, the collected critical dimension values ​​are sorted, and the slope value of the critical dimension changing with the exposure energy is recorded to obtain a relationship curve graph of the slope changing with the exposure energy.

[0057] In this embodiment, the mask layout obtained by correcting the process window model of the optimal exposure energy is used to simulate the change of the critical dimension of the wafer after exposure when the exposure energy is adjusted online by ±10%. Figure 4 , where orange is the CD value after exposure using the best exposure energy during online exposure, which is 2.989μm; when the dose is reduced by 10%, that is, the exposure energy becomes smaller, the CD value after exposure at this position is 3.273μm; when the dose is increased by 10%, that is, the exposure energy becomes larger, the CD value after exposure at this position is 2.761μm; sorting out the three data, we get the relationship between CD and dose under the best dose condition: y = -2.56x + 5.5667. Similarly, when using the mask obtained when the dose is increased by 10%, after online exposure, an increase of 10% and a decrease of 10% will also result in a CD value. Sorting out the three data, we get the relationship between CD and dose under the condition of increasing the dose by 10%, as shown below Figure 4 shown.

[0058] Finally, the slope of the relationship under the five exposure conditions is calculated to obtain the relationship curve between slope and dose. Figure 5As shown, the slope decreases as the dose increases, which can reflect the fluctuation of exposure energy during online exposure and the size of the change in the critical dimension: the larger the slope, the more drastic the change in the critical dimension with the exposure energy, and the smaller the slope, the less sensitive the critical dimension is to the change in exposure energy and the more stable the process. Of course, the dose cannot be increased indefinitely, because increasing the dose will lose some DOF (increasing the exposure energy will make the depth of focus (DOF) shallower, that is, the part outside the focus is more likely to be blurred. This is because increasing the exposure energy will increase the exposure depth of the exposed glue, making the focal plane of the image sharper, thereby reducing the focal depth range).

[0059] In summary, the present invention mainly increases the contrast of the graphics by increasing the exposure energy, and can solve the CD fluctuation problem caused by the change of online exposure energy at any time. It is known that the exposure process is the physical and chemical reaction process of the photoresist, and the photoresist reaction has a critical value. When the exposure energy is less than this critical value, the photoresist reaction is not sufficient. Changing the exposure energy will have a greater impact on the CD fluctuation. When the exposure energy reaches a certain threshold, the exposure energy is increased again. At this time, the photoresist reaction is saturated, and changing the exposure energy will have less impact on the CD fluctuation. Figure 3 As shown in the figure, assuming that the best exposure energy is the best dose, the OPC (Optical Proximity Correction, Optical Proximity Correction, referred to as OPC) processing will correspond to an OPC mask (Optical Proximity Correction mask), and the simulated contour under this condition (the contour obtained by the OPC model (Optical Proximity Correction model) simulation mask) and the corresponding contour when the exposure energy fluctuates up and down by 10% are also as shown in the figure. Figure 3 As shown in the figure, when the optimal exposure energy increases by 10%, 20%, 30% and 50% respectively, the corresponding mask and PW contour (process window contour) are obtained. Based on this example, online measurements show that when the exposure energy increases, the exposure stability also increases, and the corresponding slope decreases, as shown in the figure. Figure 5 As shown in the figure, according to the curve of slope changing with dose, it can be seen that when dose increases to a certain value, slope starts to change slowly, and if dose is increased further, slope will not change much. Therefore, increasing dose by 30% is selected as the critical point of exposure energy change, which increases process stability while ensuring DOF.

[0060] In some exemplary embodiments, a selection rule for the critical point of exposure energy change may be further set according to a curve of slope versus dose.

[0061] The present invention is based on the above exposure experiment, and appropriately increases the online exposure energy to reduce CD fluctuation and improve process stability. The exposure experiment can be actual exposure on an exposure machine or computer simulation exposure. The computer simulation exposure can be Calibre Mentor software or Progen Synopsys software or Tychyan Brion software.

[0062] The photolithography process optimization method of the flat panel display of the embodiment of the present invention increases the exposure energy to improve EL (Exposure Latitude) and increase the process stability. EL (Exposure Latitude): Exposure latitude, also known as exposure margin, is one of the important parameters of the process window. The optical exposure system can form an exposure energy range that meets the requirements of the design layout. It is usually defined by the exposure energy selection range within the range of + / -10% using the change in the CD value detected by the exposure result. That is, if the CD change of the exposure pattern is relatively small when the resist deviates from the optimal exposure dose, it means that the resist has a large exposure latitude. Generally, the larger the exposure latitude, the larger the development latitude. The present invention solves the problem of CD unevenness caused by process fluctuations such as energy changes at any time during online exposure. The curve of slope changes with Dose is obtained through actual measurement, wherein the larger the slope, the greater the fluctuation of CD with Dose, and the smaller the slope, the better the stability of CD when the exposure energy changes. To a certain extent, the CD instability problem caused by dose changes is solved, and the overall solution is easy to implement, does not change the existing working mode of panel engineers, and has high acceptance.

[0063] Example 2

[0064] In an embodiment of the present invention, an electronic device is also provided. Figure 6 Schematic diagram of the structure of an electronic device according to an embodiment of the present invention. Figure 6 As shown, the electronic device of the present invention includes a processor 201 and a memory 202, wherein:

[0065] The memory 202 stores a computer program. When the computer program is read and executed by the processor 201, the computer program executes the steps in the above-mentioned embodiment of the method for optimizing the photolithography process of a flat panel display.

[0066] Example 3

[0067] In an embodiment of the present invention, a computer-readable storage medium is further provided, in which a computer program is stored, wherein the computer program is configured to execute the steps in the above-mentioned embodiment of the method for optimizing the lithography process of a flat panel display when running.

[0068] In this embodiment, the above-mentioned computer-readable storage medium may include but is not limited to: a USB flash drive, a read-only memory (ROM), a random access memory (RAM), a mobile hard disk, a magnetic disk or an optical disk, and other media that can store computer programs.

[0069] Those skilled in the art can understand that the above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention is described in detail with reference to the aforementioned embodiments, those skilled in the art can still modify the technical solutions recorded in the aforementioned embodiments or replace some of the technical features therein by equivalents. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for optimizing the photolithography process of a flat panel display, characterized in that: The following steps are involved: Use test patterns of different sizes to complete the first mask production according to the current product; collecting exposure data of the first photomask under a plurality of different exposure energy conditions, and establishing a process window model; Using the process window model, the optimal exposure energy for the next product and the corrected mask layout under the condition of increasing the optimal exposure energy by 10% to 50% are given, and the second mask is produced following the product; Performing an exposure test on the second photomask under each exposure energy condition, collecting and arranging the critical dimension values ​​of the wafer after each exposure energy and its preset change ratio, and obtaining a plurality of linear relationship equations about the critical dimension changing with the exposure energy; According to the critical dimension value and the slope value of each linear relationship, a relationship curve diagram of the slope of the linear relationship changing with the exposure energy is obtained for selecting the final exposure energy.

2. The method for optimizing the photolithography process of a flat panel display according to claim 1, characterized in that: Also includes: Use the test pattern generation tool to design a set of test patterns of different sizes based on the types of patterns in the real layout.

3. The method for optimizing the photolithography process of a flat panel display according to claim 1, characterized in that: The multiple different exposure energy conditions are centered on the optimal exposure energy and evenly distributed along both sides of the optimal exposure energy with a step size of 1 mj or 5% exposure energy change.

4. The method for optimizing the photolithography process of a flat panel display according to claim 1, characterized in that: The step of collecting the exposure data of the first mask under a plurality of different exposure energy conditions and establishing a process window model further comprises: Applying for wafer online, exposing the first photomask for each of the exposure energy conditions; Collect wafer data after exposure under different exposure energy conditions and organize them into the format required for modeling; According to the wafer data, exposure machine light source file, photoresist material information, film layer information, and exposure mask layout file, a process window model is established through software fitting to predict the change in key dimensions of the graphic after exposure energy changes.

5. The method for optimizing the photolithography process of a flat panel display according to claim 1, characterized in that: The step of using the process window model to provide the optimal exposure energy for the next product and the corrected mask layout under the condition of increasing the optimal exposure energy by 10% to 50% further includes: The exposure energy of the process window model is changed to increase the optimal light energy exposure by 10%, 20%, 30%, and 50%, and the optimal exposure energy condition is continued to be used to obtain five process window models with different exposure energies, which are used to guide the correction program to correct the mask layout and obtain the corrected mask layout under different exposure energy conditions.

6. The method for optimizing the photolithography process of a flat panel display according to claim 1, characterized in that: The step of performing an exposure test on the second mask under each exposure energy condition, collecting and arranging the critical dimension values ​​of the wafer under each exposure energy and its preset ratio change, and obtaining a linear relationship between the corresponding critical dimension and the exposure energy change, further includes: Using the same number of wafers as the number of different exposure energy conditions, exposure is performed for the mask layout corrected under each exposure energy condition; The key dimension values ​​of the same pattern on the mask under each exposure energy and its variation of ±10% are collected, and the linear relationship between the key dimension corresponding to each exposure energy and the exposure energy is obtained.

7. The method for optimizing the photolithography process of a flat panel display according to claim 1, characterized in that: The step of obtaining a relationship curve diagram of the slope versus exposure energy according to the slope of each linear relationship further comprises: Record the slope value of each linear relationship; According to the wafer critical dimension and the slope value, a relationship curve diagram of the slope of the linear relationship changing with the exposure energy is obtained.

8. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, characterized in that: The processor is used to execute the computer program stored in the memory to implement the photolithography process optimization method for a flat panel display according to any one of claims 1 to 7.

9. A computer-readable storage medium, characterized in that: The storage medium stores a computer program, which is loaded and executed by a processor to implement the photolithography process optimization method for a flat panel display according to any one of claims 1 to 7.

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