Wafer deformation device and resistivity control method
By using vacuum devices and adjustable needle-engraved deformation method in wafer deformation device, the problem of limited resistivity control effect and negative effect in the prior art is solved, and the precise control and performance of resistivity of semiconductor materials is achieved. promote.
Patent Information
- Application Number
- CN202310945278.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-07-28
- Publication Date
- 2025-02-14
AI Technical Summary
The resistivity control methods of existing semiconductor materials have problems of limited effects and negative effects, especially when there are special demands for resistivity.
Provide a wafer deformation device and resistivity control method, which deforms the wafer to be processed through a vacuum device, and forms different bending degrees and bending directions by adjusting the position of the needle engraving, thereby generating pressure in the material layer to be processed. Stress or tension stress changes the resistivity.
Through the deformation adjustment method, the resistivity of the semiconductor material can be accurately controlled, avoiding the negative effects caused by excessive dopant in the dopant implantation method, and improving the performance of the semiconductor structure.
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Figure CN119446954A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor manufacturing technology, and in particular to a wafer rounding device and a resistivity control method. Background Art
[0002] In semiconductor processes, there are many situations where the resistivity of semiconductor materials needs to be adjusted. For example, in existing polysilicon gate processes, the resistivity of the polysilicon gate is usually changed accordingly by adjusting the implantation dose of dopant ions (such as boron ions, phosphorus ions, etc.). However, when there are special requirements for resistivity, the effect of simply adjusting the ion implantation dose is limited and will bring some negative effects. For example, the implantation of too many phosphorus atoms will cause phosphorus precipitation, which will in turn cause polymers to appear on the surface of the polysilicon gate, forming some particle defects; the implantation of too many boron atoms will affect the control of the depletion effect of polysilicon.
[0003] In conclusion, the existing resistivity control methods of semiconductor materials need to be further improved. Summary of the invention
[0004] The technical problem solved by the present invention is to provide a wafer resistivity changing device and a resistivity control method to improve the performance of the formed semiconductor structure.
[0005] In order to solve the above technical problems, the technical solution of the present invention provides a deformation device, including: a substrate; a plurality of needle carvings arranged perpendicular to the surface of the substrate, the top position of each needle carving is adjustable, and the tops of the plurality of needle carvings are used to place wafers to be processed; a chamber, when the wafer to be processed is placed on the tops of the plurality of needle carvings, a chamber is formed between the wafer to be processed and the substrate, and the chamber forms a closed space; a vacuum device, the vacuum device is used to extract air in the chamber to deform the wafer to be processed, and to make the surface of the wafer to be processed fit with the tops of the needle carvings at corresponding positions.
[0006] Optionally, it also includes: a moving device for moving the wafer to be processed.
[0007] Optionally, it also includes: several curvature models, each curvature model has a working surface, the working surface is spherical, and the bending direction includes the center point being convex or concave relative to the surrounding area, different curvature models have different curvature degrees or bending directions, and each curvature model is used to enable the spherical surface where the top surfaces of the several needle carvings are located to obtain corresponding curvature and bending direction when the working surface of the selected curvature model fits with the top surfaces of the several needle carvings.
[0008] Optionally, it also includes: a fastening device, which is used to fix each needle carving to the base plate after adjusting the top position of each needle carving.
[0009] Optionally, the diameter of each needle carving ranges from 1 mm to 2 mm; the distribution positions of the plurality of needle carvings on the substrate surface are located within a circular area of the substrate surface, the plurality of needle carvings are arranged along the diameter direction of the circular area, and the size range between adjacent needle carvings in the diameter direction ranges from 2 mm to 3 mm; the distribution density range of the plurality of needle carvings is 0.09 pieces / mm 2 Up to 0.16 pieces / mm 2 .
[0010] Correspondingly, the technical solution of the present invention also provides a resistivity control method, including: the resistivity control method includes: providing a wafer to be processed, the wafer to be processed includes a material layer to be processed; detecting the resistivity of the material layer to be processed to obtain an initial resistivity value of the material layer to be processed; adjusting the resistivity of the layer to be processed to reach a target resistivity value through deformation, the deformation adjustment method includes adjusting the deformation of the wafer to be processed according to the initial resistivity value and the target resistivity value to change the resistivity of the material layer to be processed until the resistivity of the material layer to be processed reaches the target resistivity value.
[0011] Optionally, before the deformation adjustment, the conductivity type of the material layer to be processed is also obtained; the deformation adjustment method also includes: performing deformation adjustment on the wafer to be processed according to the conductivity type of the material layer to be processed.
[0012] Optionally, the deformation adjustment method also includes: providing a wafer deformation device, the wafer deformation device including a substrate; a plurality of needle carvings arranged perpendicular to the surface of the substrate, the top position of each needle carving is adjustable, and the tops of the plurality of needle carvings are used to place the wafer to be processed; a chamber, when the wafer to be processed is placed on the tops of the plurality of needle carvings, a chamber is formed between the wafer to be processed and the substrate, and the chamber forms a closed space; a vacuum device, the vacuum device is used to extract air in the chamber to deform the wafer to be processed, and to make the surface of the wafer to be processed fit with the tops of the needle carvings at corresponding positions; according to the initial resistivity value, the target resistivity value and the conductivity type of the material layer to be processed, the top positions of the needle carvings of the wafer deformation device are adjusted, and the tops of the plurality of needle carvings are located on the same spherical surface; the material layer to be processed is directed toward the tops of the plurality of needle carvings, and the wafer to be processed is placed on the tops of the plurality of needle carvings; the air in the chamber is extracted to make the wafer to be processed fit with the tops of the needle carvings at corresponding positions.
[0013] Optionally, the method further includes: after the deformation is adjusted, releasing the wafer to be processed from the top of the plurality of needle carvings.
[0014] Optionally, the method for adjusting the top position of each needle carving of the wafer deformation device includes: adjusting the curvature direction and curvature size of the spherical surface where the tops of the needle carvings are located.
[0015] Optionally, the method for adjusting the curvature direction of the spherical surface where the tops of several needle carvings are located includes: the conductive ions in the material layer to be processed are N-type, and the initial resistivity value is lower than the target resistivity value, so that the top of the central needle carving among the several needle carvings is higher than the tops of the surrounding needle carvings.
[0016] Optionally, the method for adjusting the curvature direction of the spherical surface where the tops of several needle carvings are located includes: the conductive ions in the material layer to be processed are N-type, and the initial resistivity value is higher than the target resistivity value, so that the top of the central needle carving among the several needle carvings is lower than the tops of the surrounding needle carvings.
[0017] Optionally, the method for adjusting the curvature direction of the spherical surface where the tops of several needle carvings are located includes: the conductive ions in the material layer to be processed are P type, and the initial resistivity value is lower than the target resistivity value, so that the top of the central needle carving among the several needle carvings is lower than the tops of the surrounding needle carvings.
[0018] Optionally, the method for adjusting the curvature direction of the spherical surface where the tops of several needle carvings are located includes: the conductive ions in the material layer to be processed are P type, and the initial resistivity value is higher than the target resistivity value, so that the top of the central needle carving among the several needle carvings is higher than the tops of the surrounding needle carvings.
[0019] Optionally, the method for adjusting the curvature of the spherical surface where the tops of several needle carvings are located also includes: obtaining a target curvature value based on an initial resistivity value and a target resistivity value; and adjusting the position of the top of each needle carving based on the target curvature value so that the curvature of the spherical surface where the top surfaces of several needle carvings are located reaches the target curvature value.
[0020] Optionally, the deformation device also includes: a plurality of curvature models, each curvature model having a working surface, the working surface being spherical, and the bending direction includes the center point being convex or concave relative to the surrounding area, and different curvature models have different curvature degrees or bending directions. Each curvature model is used to enable the spherical surface where the top ends of the plurality of needle carvings of the wafer deformation device are located to obtain corresponding curvature and bending direction when the working surface of the selected curvature model fits with the top surfaces of the plurality of needle carvings.
[0021] Optionally, a method for obtaining a wafer to be processed includes: providing an initial wafer; forming an initial material layer on the initial wafer; and injecting doping ions into the initial material layer to obtain the material layer to be processed, wherein the doping ions include N-type or P-type ions.
[0022] Optionally, the structure of the material layer to be processed includes a gate.
[0023] Optionally, the material of the material layer to be processed includes silicon.
[0024] Compared with the prior art, the technical solution of the embodiment of the present invention has the following beneficial effects:
[0025] In the wafer deformation device provided by the technical solution of the present invention, a vacuum device is used to extract air in the chamber to deform the wafer to be processed and make the surface of the wafer to be processed fit with the top of each needle carving at the corresponding position. By changing the position of the top of each needle carving, the tops of several needle carvings can form a spherical surface with different curvatures or curvature directions, thereby generating different sizes of compressive stress or tensile stress in the material layer to be processed in the wafer to be processed. Since the semiconductor material can change the band structure under the action of stress, the resistivity value of the material layer to be processed in the wafer to be processed is changed by deforming the wafer to be processed, thereby achieving the effect of controlling the resistivity and avoiding the negative effects caused by excessive dopants in the dopant injection method.
[0026] In the resistivity control method provided by the technical solution of the present invention, the deformation adjustment is performed on the wafer to be processed according to the initial resistivity value and the target resistivity value to change the resistivity of the material layer to be processed until the resistivity of the material layer to be processed reaches the target resistivity value, and the deformation adjustment is performed on the wafer to be processed, thereby generating different sizes of compressive stress or tensile stress in the material layer to be processed in the wafer to be processed. Since the semiconductor material can change the band structure under the action of stress, the resistivity value of the material layer to be processed in the wafer to be processed is changed by deforming the wafer to be processed, thereby achieving the effect of controlling the resistivity and avoiding the negative effects caused by excessive dopants in the dopant injection method. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figures 1 to 8 is a schematic structural diagram of a wafer shape changing device according to an embodiment of the present invention;
[0028] Figures 9 and 10 It is a structural schematic diagram of each step of the resistivity control method according to an embodiment of the present invention. DETAILED DESCRIPTION
[0029] It should be noted that the terms “surface” and “on” in this specification are used to describe relative positional relationships in space and are not limited to direct contact.
[0030] As described in the background art, the performance of a semiconductor structure formed by a method for controlling the resistivity of a semiconductor material needs to be improved urgently.
[0031] In order to solve the above problems, the present invention provides a wafer deformation device and resistivity control method, in which the wafer to be processed is deformed, and compressive stress or tensile stress of different sizes is generated in the material layer to be processed in the wafer to be processed. Since the semiconductor material can change the band structure under the action of stress, the resistivity value of the material layer to be processed in the wafer to be processed is changed by deforming the wafer to be processed, thereby achieving the effect of controlling the resistivity and avoiding the negative effects caused by excessive dopants in the dopant injection method.
[0032] In order to make the above-mentioned objects, features and beneficial effects of the present invention more obvious and easy to understand, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.
[0033] Figures 1 to 8 It is a schematic structural diagram of a wafer transformation device according to an embodiment of the present invention.
[0034] Please refer to Figures 1 to 6 , Figure 1 It is a schematic diagram of the top view of the wafer transformation device. Figures 2 to 6 Both Figure 1 In the schematic diagram of the cross-sectional structure along the EE1 direction, the wafer deformation device includes: a substrate 100; a plurality of needle carvings 101 arranged perpendicular to the surface of the substrate 100, the top position of each needle carving 101 is adjustable, and the top of the plurality of needle carvings 101 is used to place a wafer 102 to be processed; a chamber 103, when the wafer 102 to be processed is placed on the top of the plurality of needle carvings 101, a chamber 103 is formed between the wafer 102 to be processed and the substrate 100, and the chamber 103 forms a closed space; a vacuum device (not shown in the figure), the vacuum device is used to extract the air in the chamber 103, so that the wafer 102 to be processed is deformed, and the surface of the wafer 102 to be processed fits with the top of each needle carving 101 at the corresponding position.
[0035] In the above-mentioned device, the vacuum device is used to extract the air in the chamber 103 to deform the wafer 102 to be processed, and to make the surface of the wafer 102 to be processed fit with the top of each needle carving 101 at the corresponding position. By changing the position of the top of each needle carving 101, the tops of several needle carvings 101 can form a spherical surface with different curvatures or curvature directions, thereby generating different sizes of compressive stress or tensile stress in the material layer to be processed in the wafer 102 to be processed. Since the semiconductor material can change the band structure under the action of stress, the resistivity value of the material layer to be processed in the wafer 102 to be processed is changed by deforming the wafer 102 to be processed, thereby achieving the effect of controlling the resistivity and avoiding the negative effects caused by excessive dopants in the dopant injection method.
[0036] It should be noted that, since the top position of each needle carving 101 is adjustable, the top position of the wafer rounding device can be placed in different states. Figures 2 to 6 Schematic diagrams of wafer-shaped devices in several typical usage states are given, including:
[0037] like Figure 2 As shown, the top of each needle carving 101 is located on the horizontal plane AA1, and when the wafer 102 to be processed fits with the top of each needle carving 101 at the corresponding position, the wafer 102 to be processed does not deform;
[0038] like Figure 3 As shown, the top of each needle carving 101 is located on the upward curved convex spherical surface BB1, and the wafer 102 to be processed is placed on the top of each needle carving 101;
[0039] like Figure 4 As shown, corresponding to Figure 3 When the wafer 102 to be processed is fitted with the top of each needle carving 101 at the corresponding position, the wafer 102 to be processed is deformed due to bending upward;
[0040] like Figure 5 As shown, the top of each needle carving 101 is located on the downward curved concave spherical surface CC1, and the wafer 102 to be processed is placed on the top of each needle carving 101;
[0041] like Figure 6 As shown, corresponding to Figure 5 When the wafer 102 to be processed is fitted with the top ends of the needle carvings 101 at the corresponding positions, the wafer 102 to be processed is deformed due to bending downward.
[0042] In this embodiment, the wafer deformation device further includes: a moving device (not shown in the figure) for moving the wafer to be processed.
[0043] In this embodiment, the wafer deformation device further includes: a fastening device (not shown in the figure), which is used to fix each needle carving 101 to the substrate 100 after adjusting the top position of each needle carving 101.
[0044] In this embodiment, the diameter of each needle carving 101 ranges from 1 mm to 2 mm.
[0045] In this embodiment, the distribution positions of the plurality of needle carvings 101 on the surface of the substrate 100 are located within the circular area of the surface of the substrate 100, and the plurality of needle carvings 101 are arranged in the diameter direction of the circular area. In the diameter direction, the size range between adjacent needle carvings 101 is 2 mm to 3 mm. In other embodiments, the arrangement of the plurality of needle carvings 101 can be adjusted according to actual needs, which will not be described in detail here.
[0046] In this embodiment, the distribution density of the plurality of needle carvings 101 is in the range of 0.09 pieces / mm2 Up to 0.16 pieces / mm 2 The greater the distribution density of the needle carvings 101 , the more uniform the stress distribution inside the wafer 102 to be processed can be.
[0047] In this embodiment, the wafer curvature device also includes several curvature models, please refer to Figure 7 and Figure 8 .
[0048] Please refer to Figure 7 and Figure 8 , several curvature models 200, each curvature model 200 has a working surface 201, the working surface 201 is spherical, and the bending direction includes the center point being convex or concave relative to the surrounding area, different curvature models have different curvature degrees or bending directions, and each curvature model is used to, when the working surface of the selected curvature model 200 is in contact with the top surfaces of several needle carvings 101, the spherical surface where the top surfaces of the several needle carvings 101 are located can obtain the corresponding curvature and bending direction.
[0049] It should be noted that Figure 7 and Figure 8 A curvature model 200 for each bending direction is shown. Figure 7 The center point of the working surface 201 is convex relative to the surrounding area. Figure 8 The center point of the working surface 201 is recessed relative to the surrounding area.
[0050] Furthermore, it should be noted that the width L of the curvature model 200, the diameter size of the distribution of several needle carvings 101 and the diameter size of the wafer to be processed can be consistent, so that the working surface of the curvature model 200 can be respectively fitted with the top surfaces of several needle carvings 101, so that the surface of the wafer to be processed 102 can be fitted with the top of each needle carving 101 at the corresponding position after deformation.
[0051] In this embodiment, a plurality of curvature models 200 with different heights D and different curvature directions are used to meet different curvature and curvature direction requirements.
[0052] Figures 9 and 10 It is a structural schematic diagram of each step of the semiconductor material resistivity control method according to an embodiment of the present invention.
[0053] Accordingly, the embodiment of the present invention also provides a resistivity control method, please refer to Fig. 9 , including the following steps:
[0054] Step S301, providing a wafer to be processed, wherein the wafer to be processed includes a material layer to be processed;
[0055] Step S302, detecting the resistivity of the material layer to be processed to obtain an initial resistivity value of the material layer to be processed;
[0056] Step S303, the resistivity of the layer to be processed is made to reach the target resistivity value through deformation adjustment. The deformation adjustment method includes adjusting the deformation of the wafer to be processed according to the initial resistivity value and the target resistivity value to change the resistivity of the material layer to be processed until the resistivity of the material layer to be processed reaches the target resistivity value.
[0057] In the above resistivity control method, the deformation adjustment is performed on the wafer to be processed according to the initial resistivity value and the target resistivity value to change the resistivity of the material layer to be processed until the resistivity of the material layer to be processed reaches the target resistivity value, and the deformation adjustment is performed on the wafer to be processed, thereby generating different sizes of compressive stress or tensile stress in the material layer to be processed in the wafer to be processed. Since the semiconductor material can change the band structure under the action of stress, the resistivity value of the material layer to be processed in the wafer to be processed is changed by deforming the wafer to be processed, thereby achieving the effect of controlling the resistivity and avoiding the negative effects caused by excessive dopants in the dopant injection method.
[0058] The following is a detailed description with reference to the accompanying drawings.
[0059] Please continue to refer to Fig. 9 , Figures 2 to 6 , providing a wafer 102 to be processed, wherein the wafer 102 to be processed includes a material layer to be processed (not shown in the figure).
[0060] The structure of the material layer to be processed includes a gate. In this embodiment, the structure of the material layer to be processed is a gate. In other embodiments, it can be used to control the resistivity of structures formed by other semiconductor materials, which will not be described in detail here.
[0061] The material of the material layer to be processed includes silicon. In this embodiment, the material of the material layer to be processed is polysilicon. In other embodiments, the material of the material layer to be processed can also be other semiconductor materials, such as germanium, germanium silicon, silicon carbide, gallium nitride, gallium arsenide, etc.
[0062] It should be noted that, taking silicon material as an example, the crystal structure and band structure of silicon are anisotropic, and the energy surfaces of the silicon conduction band are six rotating ellipsoids with extreme values along the
[100] direction. For N-type doped silicon material, its resistivity decreases with the increase of tensile stress inside it, and increases with the increase of compressive stress; while for P-type doped silicon material, its resistivity increases with the increase of tensile stress, and decreases with the increase of compressive stress. Based on the above theory, the stress inside the material layer to be processed will be changed by external force, thereby changing its resistivity.
[0063] In this embodiment, before the deformation adjustment, the conductivity type of the material layer to be processed is also obtained.
[0064] The conductivity type of the material layer to be processed includes N type or P type. When used for a PMOS device, the conductivity type of the material layer to be processed is P type. When used for an NMOS device, the conductivity type of the material layer to be processed is N type.
[0065] The method for obtaining the wafer 102 to be processed includes: providing an initial wafer; forming an initial material layer on the initial wafer; and injecting doping ions into the initial material layer to obtain the material layer to be processed, wherein the doping ions include N-type or P-type ions.
[0066] It should be noted that by ion doping, the material layer to be processed obtains an initial resistivity value, and the doping dose is set within a safe window, that is, an appropriate doping dose is adjusted, so that no negative effects are caused by excessive doping agents.
[0067] Please continue to refer to Fig. 9 , Figures 1 to 6 , the resistivity of the material layer to be processed is detected to obtain an initial resistivity value of the material layer to be processed; according to the initial resistivity value and the target resistivity value, the deformation of the wafer 102 to be processed is adjusted to change the resistivity of the material layer to be processed until the resistivity of the material layer to be processed reaches the target resistivity value.
[0068] In this embodiment, the deformation adjustment method further includes: adjusting the deformation of the wafer 102 to be processed according to the conductivity type of the material layer to be processed.
[0069] In this embodiment, the deformation adjustment method can be found in Fig.10 , further comprising the following steps:
[0070] Step 3031, providing a wafer deformation device, the wafer deformation device comprising: a substrate; a plurality of needle carvings arranged perpendicular to the surface of the substrate, the top position of each needle carving is adjustable, and the top of the plurality of needle carvings is used to place the wafer to be processed; a chamber, when the wafer to be processed is placed on the top of the plurality of needle carvings, a chamber is formed between the wafer to be processed and the substrate, and the chamber forms a closed space; a vacuum device, the vacuum device is used to extract air in the chamber, so that the wafer to be processed is deformed, and the surface of the wafer to be processed is fitted with the top of each needle carving at the corresponding position;
[0071] Step 3032, adjusting the top position of each needle carving of the wafer spherical deformation device according to the initial resistivity value, the target resistivity value and the conductivity type of the material layer to be processed, so that the tops of the needle carvings are located on the same spherical surface;
[0072] Step 3033, making the material layer to be processed face the tops of the plurality of needle carvings, and placing the wafer to be processed on the tops of the plurality of needle carvings;
[0073] Step 3034, extracting the air in the chamber to make the wafer to be processed fit with the top of each needle carving at the corresponding position.
[0074] The following is a detailed description with reference to the accompanying drawings.
[0075] Please continue to refer to Fig.10 , Figures 1 to 6 , providing a wafer-shaped variable device. Please refer to the description of the wafer-shaped variable device in the previous text, which will not be repeated here.
[0076] Please continue to refer to Fig.10 , Figures 1 to 6 According to the initial resistivity value, the target resistivity value and the conductivity type of the material layer to be processed, the top position of each needle carving 101 of the wafer rounding device is adjusted, and the tops of several needle carvings 101 are located on the same spherical surface.
[0077] Specifically, the method for adjusting the top position of each needle carving 101 of the wafer deformation device includes: adjusting the curvature direction and curvature size of the spherical surface where the tops of the needle carvings 101 are located.
[0078] In this embodiment, the method of adjusting the curvature direction of the spherical surface where the top ends of the plurality of needle carvings 101 are located generally includes the following situations:
[0079] First, the conductive ions in the material layer to be processed are N-type, and the initial resistivity value is lower than the target resistivity value, so that the top of the central needle carving 101 among the plurality of needle carvings 101 is higher than the top of the surrounding needle carvings 101, please refer to Figure 3 ;
[0080] Secondly, the conductive ions in the material layer to be processed are N-type, and the initial resistivity value is higher than the target resistivity value, so that the top of the central needle carving 101 among the plurality of needle carvings 101 is lower than the top of the surrounding needle carvings 101, please refer to Figure 5 ;
[0081] Third, the conductive ions in the material layer to be processed are P type, and the initial resistivity value is lower than the target resistivity value, so that the top of the central needle carving 101 among the plurality of needle carvings 101 is lower than the top of the surrounding needle carvings 101, please refer to Figure 5 ;
[0082] Fourthly, the conductive ions in the material layer to be processed are P type, and the initial resistivity value is higher than the target resistivity value, so that the top of the central needle carving 101 among the plurality of needle carvings 101 is higher than the top of the surrounding needle carvings 101, please refer to Figure 3 .
[0083] In this embodiment, the method for adjusting the curvature of the spherical surface where the top ends of several needle carvings 101 are located also includes: obtaining a target curvature value based on an initial resistivity value and a target resistivity value; and adjusting the position of the top end of each needle carving 101 based on the target curvature value so that the curvature of the spherical surface where the top surfaces of several needle carvings 101 are located reaches the target curvature value.
[0084] In this embodiment, please continue to refer to the deformation device Figure 7 and Figure 8 , including: a plurality of curvature models 200, each curvature model 200 having a working surface 201, the working surface 201 is spherical, and the curvature direction includes a center point that is convex or concave relative to the surrounding area, and different curvature models have different curvature degrees or bending directions. Each curvature model is used to, when the working surface of the selected curvature model 200 is in contact with the top surfaces of a plurality of needle carvings 101, enable the spherical surface where the top surfaces of the plurality of needle carvings 101 are located to obtain the corresponding curvature and bending direction.
[0085] It should be noted that in actual operation, before the deformation adjustment is performed on the layer to be processed, a relationship model between the resistivity difference and the curvature can be established. After obtaining the resistivity difference between the initial resistivity value and the target resistivity value, the target curvature value can be obtained according to the relationship model. The larger the resistivity difference between the initial resistivity value and the target resistivity value, the larger the target curvature value. According to the initial resistivity value, the target resistivity value and the conductivity type of the material layer to be processed, a curvature model 200 with a target bending direction and a target curvature value is obtained, so that the spherical surface where the top surface of several needle carvings 101 is located can obtain the corresponding curvature and bending direction, and then the material layer to be processed of the wafer 102 to be processed can obtain the corresponding curvature and bending direction.
[0086] Please continue to refer to Fig.10 , Figure 4 and Figure 6 , so that the material layer to be processed faces the top of the plurality of needle carvings 101, and the wafer 102 to be processed is placed on the top of the plurality of needle carvings 101; the air in the chamber 103 is extracted to make the wafer 102 to be processed fit with the top of each needle carving 101 at the corresponding position.
[0087] Specifically, the material layer to be processed of the wafer to be processed 102 obtains a curvature and a curvature direction corresponding to the spherical surface where the top surfaces of the plurality of needle carvings 101 are located.
[0088] In this embodiment, the method further includes: after adjusting the deformation, releasing the wafer 102 to be processed from the top of the plurality of needle carvings 101 .
[0089] It should be noted that after the wafer 102 to be processed is released from the top of the plurality of needle carvings 101, the resistivity of the material layer to be processed will continue to be maintained due to the deformation adjustment and will not be changed.
[0090] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.
Claims
1. A wafer shape changing device, characterized in that: include: substrate; A plurality of needle carvings are arranged perpendicular to the surface of the substrate, the top position of each needle carving is adjustable, and the tops of the plurality of needle carvings are used to place wafers to be processed; A chamber, when the wafer to be processed is placed on the top of the plurality of needle carvings, the chamber is formed between the wafer to be processed and the substrate, and the chamber forms a closed space; A vacuum device is used to extract the air in the chamber so as to deform the wafer to be processed and make the surface of the wafer to be processed fit with the top of each needle carving at a corresponding position.
2. The wafer deformation device according to claim 1, characterized in that: Also includes: A moving device is used to move the wafer to be processed.
3. The wafer deformation device according to claim 1, characterized in that: Also includes: Several curvature models, each of which has a working surface, which is spherical, and the curvature direction includes a center point that is convex or concave relative to the surrounding area. Different curvature models have different curvature degrees or bending directions. Each curvature model is used to enable the spherical surface where the top surfaces of the several needle carvings are located to obtain corresponding curvature and bending direction when the working surface of the selected curvature model fits with the top surfaces of the several needle carvings.
4. The wafer deformation device according to claim 1, characterized in that: Also includes: A fastening device is used to fix each of the needle carvings to the base plate after adjusting the top position of each of the needle carvings.
5. The wafer deformation device according to claim 1, characterized in that: The diameter of each needle carving ranges from 1 mm to 2 mm; the distribution positions of the needle carvings on the surface of the substrate are located within a circular area on the surface of the substrate, and the needle carvings are arranged along the diameter direction of the circular area. In the diameter direction, the size range between adjacent needle carvings is from 2 mm to 3 mm; The distribution density of some of the needle carvings is 0.09 / mm 2 Up to 0.16 pieces / mm 2 .
6. A resistivity control method, characterized in that: include: Providing a wafer to be processed, wherein the wafer to be processed comprises a material layer to be processed; Detecting the resistivity of the material layer to be processed to obtain an initial resistivity value of the material layer to be processed; The resistivity of the layer to be processed is made to reach a target resistivity value through deformation adjustment. The deformation adjustment method includes adjusting the deformation of the wafer to be processed according to the initial resistivity value and the target resistivity value to change the resistivity of the material layer to be processed until the resistivity of the material layer to be processed reaches the target resistivity value.
7. The resistivity control method according to claim 6, characterized in that: Before the deformation adjustment, the conductivity type of the material layer to be processed is also obtained; The deformation adjustment method further includes: adjusting the deformation of the wafer to be processed according to the conductivity type of the material layer to be processed.
8. The resistivity control method according to claim 7, characterized in that: The deformation adjustment method also includes: providing a wafer deformation device, the wafer deformation device includes a substrate; a plurality of needle carvings arranged perpendicular to the surface of the substrate, the top position of each needle carving is adjustable, and the tops of the plurality of needle carvings are used to place the wafer to be processed; a chamber, when the wafer to be processed is placed on the tops of the plurality of needle carvings, the chamber is formed between the wafer to be processed and the substrate, and the chamber forms a closed space; a vacuum device, the vacuum device is used to extract the air in the chamber to deform the wafer to be processed and make the surface of the wafer to be processed fit with the tops of the plurality of needle carvings at corresponding positions; according to the initial resistivity value, the target resistivity value and the conductivity type of the material layer to be processed, adjusting the top positions of the plurality of needle carvings of the wafer deformation device, and the tops of the plurality of needle carvings are located on the same spherical surface; making the material layer to be processed face the tops of the plurality of needle carvings, and placing the wafer to be processed on the tops of the plurality of needle carvings; extracting the air in the chamber to make the wafer to be processed fit with the tops of the plurality of needle carvings at corresponding positions.
9. The resistivity control method according to claim 8, characterized in that: The method further includes: after the deformation adjustment, releasing the wafer to be processed from the top ends of the plurality of needle carvings.
10. The resistivity control method according to claim 8, characterized in that: The method for adjusting the top position of each needle carving of the wafer-shaped deformation device includes: adjusting the curvature direction and curvature size of the spherical surface where the tops of the needle carvings are located.
11. The resistivity control method according to claim 10, characterized in that: The method for adjusting the curvature direction of the spherical surface where the tops of several needle carvings are located includes: the conductive ions in the material layer to be processed are N-type, and the initial resistivity value is lower than the target resistivity value, so that the top of the needle carving in the center of several needle carvings is higher than the tops of the surrounding needle carvings.
12. The resistivity control method according to claim 10, characterized in that: The method for adjusting the curvature direction of the spherical surface where the tops of several needle carvings are located includes: the conductive ions in the material layer to be processed are N-type, and the initial resistivity value is higher than the target resistivity value, so that the top of the needle carving in the center of several needle carvings is lower than the tops of the surrounding needle carvings.
13. The resistivity control method according to claim 10, characterized in that: The method for adjusting the curvature direction of the spherical surface where the tops of several needle carvings are located includes: the conductive ions in the material layer to be processed are P type, and the initial resistivity value is lower than the target resistivity value, so that the top of the needle carving in the center of several needle carvings is lower than the tops of the surrounding needle carvings.
14. The resistivity control method according to claim 10, characterized in that: The method for adjusting the curvature direction of the spherical surface where the tops of several needle carvings are located includes: the conductive ions in the material layer to be processed are P type, and the initial resistivity value is higher than the target resistivity value, so that the top of the needle carving in the center of several needle carvings is higher than the tops of the needle carvings located around it.
15. The resistivity control method according to claim 10, characterized in that: The method for adjusting the curvature of the spherical surface where the top ends of several needle carvings are located also includes: obtaining a target curvature value based on the initial resistivity value and the target resistivity value; and adjusting the position of the top end of each needle carving based on the target curvature value so that the curvature of the spherical surface where the top surfaces of several needle carvings are located reaches the target curvature value.
16. The resistivity control method according to claim 10, characterized in that: The deformation device also includes: a plurality of curvature models, each of the curvature models having a working surface, the working surface being spherical, and the bending direction includes the center point being convex or concave relative to the surrounding area, and different curvature models have different curvature degrees or bending directions. Each curvature model is used to enable the spherical surface where the top ends of the plurality of needle carvings of the wafer deformation device are located to obtain corresponding curvature and bending direction when the working surface of the selected curvature model fits with the top surfaces of the plurality of needle carvings.
17. The resistivity control method according to claim 6, characterized in that: The method for obtaining the wafer to be processed includes: providing an initial wafer; forming an initial material layer on the initial wafer; and injecting doping ions into the initial material layer to obtain the material layer to be processed, wherein the doping ions include N-type or P-type ions.
18. The resistivity control method according to claim 6, characterized in that: The structure of the material layer to be processed includes a gate.
19. The resistivity control method according to claim 6, characterized in that: The material of the material layer to be processed includes silicon.