Seed crystal circle selection method and system
Silicon carbide seed wafers were screened through image analysis method, and the seed wafer with the lowest stress was selected for crystal growth, which solved the problem of difficulty in screening high-quality seed wafers in the prior art and improved the good crystal growth rate and wafer reliability.
Patent Information
- Application Number
- CN202411526929.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-30
- Publication Date
- 2025-02-18
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
The prior art is difficult to screen high-quality silicon carbide seed wafers, resulting in low crystal growth yield.
Image analysis data of seed wafer and crystal were obtained through image analysis method, and the deformation between the two was compared, and the seed wafer with the lowest stress was selected for crystal growth.
It improves the yield of crystal growth, reduces internal stress, improves wafer reliability, and reduces production costs.
Smart Images
Figure CN119465384A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of seed crystal wafer selection, and in particular to a seed crystal wafer selection method and system. Background Art
[0002] The problem of different quality and difficulty in screening of silicon carbide seed crystal wafers used as seeds for silicon carbide crystal growth using the existing physical vapor transport (PVT) method is solved. The processing of silicon carbide seed crystal wafers requires cutting, grinding, and polishing. These processing steps involve parameters such as abrasive particle size, processing pressure, removal amount, removal time, and processing relative motion mode, which will cause residual processing stress in the wafer. These stresses often need to be measured, identified, and removed by appropriate processing technology combinations.
[0003] The disadvantage of the existing technology is that it cannot measure the residual stress in the seed crystal wafer, including the original stress existing during the growth of the source crystal and the mechanical stress generated during the machining process (cutting, grinding, polishing). Residual stress represents the irregular arrangement of atoms, short-range or long-range disorder. When the crystal grows, when the atomic scale is deposited one-to-one, the irregular atomic arrangement on the surface of the seed crystal wafer will continue and extend further to the new crystal growth area.
[0004] The existing methods for growing silicon carbide crystals have inconsistent quality of silicon carbide seed crystal wafers used as seed crystals, and it is difficult to screen high-quality seed crystal wafers. It is necessary to design a method for selecting high-quality seed crystal wafers to improve the crystal growth yield. Summary of the invention
[0005] Therefore, the technical problem to be solved by the present invention is to overcome the difficulty in screening high-quality seed crystal wafers in the prior art.
[0006] In order to solve the above technical problems, the present invention provides a seed wafer selection method, comprising: Step S1: obtaining a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and obtaining analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken out from the same ingot and have deformation caused by residual stress; Step S2: performing crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed by mechanical stress and thermal stress during the growth process; Step S3: acquiring a first crystal image corresponding to the first crystal and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Step S4: comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer.
[0007] In one embodiment of the present invention, the method for acquiring the analysis data of the first image and the second image in step S1 includes: Performing grayscale processing on the first image and the second image to obtain a first grayscale image and a second grayscale image; Setting contrast pixels, for the first grayscale image and the second grayscale image, retaining positions above the contrast pixels and removing positions below the contrast pixels, to obtain first speckle images and second speckle images corresponding to the first grayscale image and the second grayscale image; The area of each connected domain in the first speckle image and the second speckle image is obtained, and the position of the geometric center point of each connected domain of the first speckle image and the second speckle image after denoising is obtained, wherein the geometric center point is the center point of the longest length of the area where the connected domain is located.
[0008] In one embodiment of the present invention, the number of connected domains whose areas in the first speckle image and the second speckle image exceed a first preset area is counted. If the number is greater than or equal to the first preset number, it indicates that the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is unqualified, and the selection is abandoned; if the number is less than the first preset number, the distance between the geometric center points of the connected domains is continuously determined; If the distance between the geometric center points of adjacent connected domains in the first speckle image or the second speckle image is less than a preset length, it is recorded. When the number of records is greater than or equal to the preset number, the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is judged to be unqualified, and the unqualified first seed crystal wafer or the second seed crystal wafer is abandoned, and the seed crystal wafer is reselected; when the number of records is less than the preset number, the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is judged to be qualified and used as an alternative seed crystal wafer.
[0009] In one embodiment of the present invention, the method for obtaining the analysis data of the first crystal image and the second crystal image in step S3 includes: Performing grayscale processing on the first crystal image and the second crystal image to obtain a first crystal grayscale image and a second crystal grayscale image; For the first crystal grayscale image and the second crystal grayscale image, positions above the comparison pixel are retained, and positions below the comparison pixel are removed, so as to obtain a first crystal speckle image and a second crystal speckle image corresponding to the first crystal grayscale image and the second crystal grayscale image; The area of each connected domain in the first crystal speckle image and the second crystal speckle image after denoising is obtained, and the number of connected domains in the first crystal speckle image and the second crystal speckle image after denoising is obtained.
[0010] In one embodiment of the present invention, the number of connected domains whose areas in the first crystal speckle image and the second crystal speckle image exceed a second preset area is counted. If the number is greater than or equal to the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified, and the selection is abandoned. If the number is less than the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified, and the number of connected domains of the seed crystal wafer is further determined. If the number of connected domains in the first crystal speckle image or the second crystal speckle image is greater than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified and the selection is abandoned; if the number of connected domains in the first crystal speckle image or the second crystal speckle image is less than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified and can be selected.
[0011] In one embodiment of the present invention, if the first seed crystal wafer is less deformed by residual stress than the second seed crystal wafer, the first crystal is less deformed by mechanical stress and thermal stress during growth than the second crystal; If the first seed crystal wafer is deformed more than the second seed crystal wafer due to residual stress, the first crystal is deformed more than the second crystal due to mechanical stress and thermal stress during the growth process.
[0012] In one embodiment of the present invention, the first speckle image and the second speckle image are filtered to retain a connected domain formed by at least three pixels to remove noise; and the first crystal speckle image and the second crystal speckle image are filtered to retain a connected domain formed by at least three pixels to remove noise.
[0013] In order to solve the above technical problems, the present invention provides a seed wafer selection system, comprising: A first acquisition module: used to acquire a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and acquire analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken out from the same ingot and have deformation caused by residual stress; A growth module: used for performing crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed by mechanical stress and thermal stress during the growth process; A second acquisition module: used for acquiring a first crystal image corresponding to the first crystal, and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Comparison and selection module: used for comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer.
[0014] To solve the above technical problems, the present invention provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the above seed wafer selection method when executing the computer program.
[0015] In order to solve the above technical problems, the present invention provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps of the seed wafer selection method as described above are implemented.
[0016] The above technical solution of the present invention has the following advantages compared with the prior art: The present invention measures the stress in the silicon carbide seed crystal wafer by an image analysis method, and screens and selects the silicon carbide seed crystal wafer with the lowest stress for crystal growth, thereby further improving the crystal growth yield. By this method, the quality of the wafer can be controlled before crystal growth, thereby improving the quality and performance of the final product. The present invention reduces the internal stress and improves the reliability of the wafer by optimizing the processing technology of the wafer; The present invention finds that the smaller / larger the residual stress of the seed crystal wafer, the smaller / larger the stress of the corresponding crystal after growth. This indicates that during the crystal growth process, lower initial stress helps to obtain higher quality crystals, which can reduce production costs and improve production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In order to make the contents of the present invention more clearly understood, the present invention is further described in detail below based on specific embodiments of the present invention in conjunction with the accompanying drawings.
[0018] Figure 1 It is a flow chart of the method of the present invention. DETAILED DESCRIPTION
[0019] The present invention is further described below in conjunction with the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and implement it, but the embodiments are not intended to limit the present invention. Embodiment 1
[0020] Reference Figure 1 As shown, the present invention relates to a seed wafer selection method, comprising: Step S1: obtaining a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and obtaining analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken out from the same ingot and have deformation caused by residual stress; Step S2: performing crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed by mechanical stress and thermal stress during the growth process; Step S3: acquiring a first crystal image corresponding to the first crystal and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Step S4: comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer.
[0021] Furthermore, the method for obtaining the analysis data of the first image and the second image in step S1 includes: Performing grayscale processing on the first image and the second image to obtain a first grayscale image and a second grayscale image; Setting contrast pixels, for the first grayscale image and the second grayscale image, retaining positions above the contrast pixels and removing positions below the contrast pixels, to obtain first speckle images and second speckle images corresponding to the first grayscale image and the second grayscale image; The area of each connected domain in the first speckle image and the second speckle image is obtained, and the position of the geometric center point of each connected domain of the first speckle image and the second speckle image after denoising is obtained, wherein the geometric center point is the center point of the longest length of the area where the connected domain is located.
[0022] Further, the number of connected domains whose areas in the first speckle image and the second speckle image exceed a first preset area is counted; if the number is greater than or equal to the first preset number, it indicates that the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is unqualified, and the selection is abandoned; if the number is less than the first preset number, the distance between the geometric center points of the connected domains continues to be determined; If the distance between the geometric center points of adjacent connected domains in the first speckle image or the second speckle image is less than a preset length, it is recorded. When the number of records is greater than or equal to the preset number, the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is judged to be unqualified, and the unqualified first seed crystal wafer or the second seed crystal wafer is abandoned, and the seed crystal wafer is reselected; when the number of records is less than the preset number, the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is judged to be qualified and used as an alternative seed crystal wafer.
[0023] Furthermore, the method for obtaining analysis data of the first crystal image and the second crystal image in step S3 includes: Performing grayscale processing on the first crystal image and the second crystal image to obtain a first crystal grayscale image and a second crystal grayscale image; For the first crystal grayscale image and the second crystal grayscale image, positions above the comparison pixel are retained, and positions below the comparison pixel are removed, so as to obtain a first crystal speckle image and a second crystal speckle image corresponding to the first crystal grayscale image and the second crystal grayscale image; The area of each connected domain in the first crystal speckle image and the second crystal speckle image after denoising is obtained, and the number of connected domains in the first crystal speckle image and the second crystal speckle image after denoising is obtained.
[0024] Further, the number of connected domains whose areas in the first crystal speckle image and the second crystal speckle image exceed a second preset area is counted; if the number is greater than or equal to the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified, and the selection is abandoned; if the number is less than the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified, and the number of connected domains of the seed crystal wafer is continued to be determined; If the number of connected domains in the first crystal speckle image or the second crystal speckle image is greater than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified and the selection is abandoned; if the number of connected domains in the first crystal speckle image or the second crystal speckle image is less than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified and can be selected.
[0025] Furthermore, if the first seed crystal wafer is less deformed by residual stress than the second seed crystal wafer, the first crystal is less deformed by mechanical stress and thermal stress during growth than the second crystal; if the first seed crystal wafer is more deformed by residual stress than the second seed crystal wafer, the first crystal is more deformed by mechanical stress and thermal stress during growth than the second crystal. It should be noted that, according to the experimental results of this embodiment, a seed crystal wafer with less residual stress is usually selected in actual production.
[0026] Further, the first speckle image and the second speckle image are filtered to retain a connected domain formed by at least three pixels to remove noise; and the first crystal speckle image and the second crystal speckle image are filtered to retain a connected domain formed by at least three pixels to remove noise. Embodiment 2
[0027] This embodiment provides a seed wafer selection system, including: A first acquisition module: used to acquire a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and acquire analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken out from the same ingot and have deformation caused by residual stress; A growth module: used for performing crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed by mechanical stress and thermal stress during the growth process; A second acquisition module: used for acquiring a first crystal image corresponding to the first crystal, and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Comparison and selection module: used for comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer. Embodiment 3
[0028] This embodiment provides an electronic device, including a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein the processor implements the steps of the seed wafer selection method described in the first embodiment when executing the computer program. Embodiment 4
[0029] This embodiment provides a computer-readable storage medium on which a computer program is stored. When the computer program is executed by a processor, the steps of the seed wafer selection method described in the first embodiment are implemented.
[0030] Those skilled in the art will appreciate that the embodiments of the present application may be provided as methods, systems, or computer program products. Therefore, the present application may adopt the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware. Moreover, the present application may adopt the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes. The schemes in the embodiments of the present application may be implemented in various computer languages, for example, object-oriented programming language Java and literal scripting language JavaScript, etc.
[0031] The present application is described with reference to the flowcharts and / or block diagrams of the methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each process and / or box in the flowchart and / or block diagram, as well as the combination of the processes and / or boxes in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing device to generate a machine, so that the instructions executed by the processor of the computer or other programmable data processing device generate instructions for implementing the processes in the flowchart and / or block diagram. Figure 1 A process or multiple processes and / or boxes Figure 1 A device that provides the functions specified in a block or multiple blocks.
[0032] These computer program instructions may also be stored in a computer-readable memory capable of directing a computer or other programmable data processing device to operate in a specific manner, so that the instructions stored in the computer-readable memory produce an article of manufacture comprising an instruction device, which implements the process Figure 1 A process or multiple processes and / or boxes Figure 1 A function specified in one or more boxes.
[0033] These computer program instructions can also be loaded onto a computer or other programmable data processing device so that a series of operating steps are executed on the computer or other programmable device to produce a computer-implemented process, thereby providing instructions for implementing the process. Figure 1 A process or multiple processes and / or boxes Figure 1 The steps for the functions specified in one or more boxes.
[0034] Although the preferred embodiments of the present application have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications falling within the scope of the present application.
[0035] Obviously, the above embodiments are merely examples for clear explanation and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived from these are still within the protection scope of the invention.
Claims
1. A seed wafer selection method, characterized in that: include: Step S1: obtaining a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and obtaining analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken out from the same ingot and have deformation caused by residual stress; Step S2: performing crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed by mechanical stress and thermal stress during the growth process; Step S3: acquiring a first crystal image corresponding to the first crystal and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Step S4: comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer.
2. The seed wafer selection method according to claim 1, characterized in that: The method for obtaining the analysis data of the first image and the second image in step S1 includes: Performing grayscale processing on the first image and the second image to obtain a first grayscale image and a second grayscale image; Setting contrast pixels, for the first grayscale image and the second grayscale image, retaining positions above the contrast pixels and removing positions below the contrast pixels, to obtain first speckle images and second speckle images corresponding to the first grayscale image and the second grayscale image; The area of each connected domain in the first speckle image and the second speckle image is obtained, and the position of the geometric center point of each connected domain of the first speckle image and the second speckle image after denoising is obtained, wherein the geometric center point is the center point of the longest length of the area where the connected domain is located.
3. The seed wafer selection method according to claim 2, characterized in that: Counting the number of connected domains whose areas in the first speckle image and the second speckle image exceed a first preset area; if the number is greater than or equal to the first preset number, it indicates that the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is unqualified, and the selection is abandoned; if the number is less than the first preset number, continue to determine the distance between the geometric center points of the connected domains; If the distance between the geometric center points of adjacent connected domains in the first speckle image or the second speckle image is less than a preset length, it is recorded. When the number of records is greater than or equal to the preset number, the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is judged to be unqualified, and the unqualified first seed crystal wafer or the second seed crystal wafer is abandoned, and the seed crystal wafer is reselected; when the number of records is less than the preset number, the first seed crystal wafer corresponding to the first speckle image or the second seed crystal wafer corresponding to the second speckle image is judged to be qualified and used as an alternative seed crystal wafer.
4. The seed wafer selection method according to claim 2, characterized in that: The method for obtaining the analysis data of the first crystal image and the second crystal image in step S3 includes: Performing grayscale processing on the first crystal image and the second crystal image to obtain a first crystal grayscale image and a second crystal grayscale image; For the first crystal grayscale image and the second crystal grayscale image, positions above the comparison pixel are retained, and positions below the comparison pixel are removed, so as to obtain a first crystal speckle image and a second crystal speckle image corresponding to the first crystal grayscale image and the second crystal grayscale image; The area of each connected domain in the first crystal speckle image and the second crystal speckle image after denoising is obtained, and the number of connected domains in the first crystal speckle image and the second crystal speckle image after denoising is obtained.
5. The seed wafer selection method according to claim 4, characterized in that: Counting the number of connected domains whose areas in the first crystal speckle image and the second crystal speckle image exceed a second preset area; if the number is greater than or equal to the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified, and the selection is abandoned; if the number is less than the second preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified, and the number of connected domains of the seed crystal wafer is continued to be determined; If the number of connected domains in the first crystal speckle image or the second crystal speckle image is greater than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is unqualified and the selection is abandoned; if the number of connected domains in the first crystal speckle image or the second crystal speckle image is less than the third preset number, it indicates that the first seed crystal wafer corresponding to the first crystal speckle image or the second seed crystal wafer corresponding to the second crystal speckle image is qualified and can be selected.
6. The seed wafer selection method according to claim 4, characterized in that: If the first seed crystal wafer is less deformed by residual stress than the second seed crystal wafer, the first crystal is less deformed by mechanical stress and thermal stress during growth than the second crystal; If the first seed crystal wafer is deformed more than the second seed crystal wafer due to residual stress, the first crystal is deformed more than the second crystal due to mechanical stress and thermal stress during the growth process.
7. The seed wafer selection method according to claim 4, characterized in that: The first speckle image and the second speckle image are filtered and a connected domain formed by at least three pixels is retained to remove noise; and the first crystal speckle image and the second crystal speckle image are filtered and a connected domain formed by at least three pixels is retained to remove noise.
8. A seed wafer selection system, characterized in that: include: A first acquisition module: used to acquire a first image corresponding to a first seed crystal wafer and a second image corresponding to a second seed crystal wafer, and acquire analysis data of the first image and the second image, wherein the first seed crystal wafer and the second seed crystal wafer are taken out from the same ingot and have deformation caused by residual stress; A growth module: used for performing crystal growth on the first seed crystal wafer and the second seed crystal wafer to obtain a first crystal of the first seed crystal wafer and a second crystal of the second seed crystal wafer, wherein the first crystal and the second crystal are deformed by mechanical stress and thermal stress during the growth process; A second acquisition module: used for acquiring a first crystal image corresponding to the first crystal, and a second crystal image corresponding to the second crystal, and acquiring analysis data of the first crystal image and the second crystal image; Comparison and selection module: used for comparing the analysis data of the first crystal image and the second crystal image with the analysis data of the first image and the second image to complete the selection of the seed wafer.
9. An electronic device comprising a memory, a processor, and a computer program stored in the memory and executable on the processor, wherein: When the processor executes the computer program, the steps of the seed wafer selection method according to any one of claims 1 to 7 are implemented.
10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the seed wafer selection method according to any one of claims 1 to 7 are implemented.