Light emitting diode structure and manufacturing method thereof

Abstract

The invention provides a light-emitting diode structure and a manufacturing method thereof. The light-emitting diode structure comprises a substrate, a plurality of light-emitting diode units and a reflecting layer, the light-emitting diode units are arranged in an array on the substrate, and each light-emitting diode unit comprises a light-emitting diode chip, a wavelength conversion layer and a short-pass filtering coating film. The light emitting diode chip is arranged on the substrate in a flip chip mode. The wavelength conversion layer is disposed on the light emitting diode chip. The short-pass filtering coating film is arranged between the wavelength conversion layer and the light emitting diode chip. The reflecting layer is filled in gaps among the plurality of light-emitting diode chips of the light-emitting diode units, and is arranged on the side surfaces of the light-emitting diode chips.

Description

Technical Field

[0001] The present invention relates to a light emitting structure and a manufacturing method thereof, and in particular to a light emitting diode structure and a manufacturing method thereof. Background Art

[0002] The existing white light emitting diode is formed by covering a blue light emitting diode chip with yellow phosphor. When the blue light emitted by the blue light emitting diode chip irradiates the yellow phosphor, a part of the blue light excites the yellow phosphor to produce yellow light. In other words, the yellow phosphor converts a part of the blue light into yellow light. The other part of the blue light that is not converted into yellow light by the yellow phosphor mixes with the yellow light to form white light.

[0003] However, when blue light excites yellow phosphor to generate yellow light, although part of the yellow light is transmitted in the direction away from the blue light LED chip to form effective light, another part of the yellow light is transmitted in the direction toward the blue light LED chip to cause some light loss.

[0004] In addition, yellow phosphor is mixed into the packaging glue and covered on the blue light LED chip. Since the refractive index of the blue light LED chip is different from that of the packaging glue, Fresnel loss will be generated when the blue light is transmitted to the interface between the blue light LED chip and the packaging glue, so that the blue light will be reflected by the interface back to the inside of the blue light LED chip, causing light loss.

[0005] In addition, the existing multi-light source module process is to package a single LED and then perform molding to place the LED on a substrate. However, such a process makes it difficult to place the LEDs compactly, and it is difficult to reduce the spacing between adjacent LEDs and the overall manufacturing cost of the module. Summary of the invention

[0006] The present invention is directed to a light emitting diode structure which can effectively reduce light loss and improve light efficiency and has a compact structure and lower manufacturing cost.

[0007] The present invention is directed to a method for manufacturing a light emitting diode structure, which can be used to manufacture a light emitting diode structure with high light efficiency, compact structure and low manufacturing cost.

[0008] One embodiment of the present invention provides a light-emitting diode structure, including a substrate, a plurality of light-emitting diode units and a reflective layer. The light-emitting diode units are arranged in an array on the substrate, and each light-emitting diode unit includes a light-emitting diode chip, a wavelength conversion layer and a short-pass filter coating. The light-emitting diode chip is configured on the substrate in a flip-chip manner and is used to emit a first light beam. The wavelength conversion layer is configured on the light-emitting diode chip and is used to convert part of the first light beam into a second light beam, wherein the wavelength of the first light beam is smaller than the wavelength of the second light beam. The short-pass filter coating is configured between the wavelength conversion layer and the light-emitting diode chip to allow the first light beam to pass through and to reflect the second light beam. The reflective layer fills the gaps between the plurality of light-emitting diode chips of the light-emitting diode units and is configured on the sides of the light-emitting diode chips.

[0009] An embodiment of the present invention provides a method for manufacturing an LED structure, comprising: providing a plurality of LED chips, wherein each LED chip has an electrode, and the LED chip is provided with a short-pass filter coating on a side opposite to the electrode; configuring the LED chips on a first temporary substrate, with the electrode facing away from the first temporary substrate; filling the gaps between the LED chips and the sides of the LED chips with a reflective layer; separating the LED chips together with the reflective layer from the first temporary substrate; configuring the LED chips together with the reflective layer on a second temporary substrate, with the electrode facing the second temporary substrate; covering the LED chips with a wavelength conversion layer; separating the LED chips together with the reflective layer and the wavelength conversion layer from the second temporary substrate; and configuring the LED chips together with the reflective layer and the wavelength conversion layer on a substrate.

[0010] An embodiment of the present invention provides a method for manufacturing an LED structure, comprising: providing a plurality of LED chips, wherein each LED chip has an electrode, and the LED chip is provided with a short-pass filter coating on a side opposite to the electrode; configuring the LED chips on a substrate with the electrode facing the substrate; filling the gaps between the LED chips and the sides of the LED chips with a reflective layer; and covering the LED chips with a wavelength conversion layer.

[0011] In the light emitting diode structure and the manufacturing method thereof of the embodiment of the present invention, since a short-pass filter coating is used to allow the first light beam emitted by the light emitting diode chip to pass through and reflect the second light beam from the wavelength conversion layer, the loss of the second light beam transmitted to the inside of the light emitting diode chip can be effectively reduced, thereby improving the light efficiency of the light emitting diode structure. In addition, in the light emitting diode structure and the manufacturing method thereof of the embodiment of the present invention, since a reflective layer is used to fill the gaps between the multiple light emitting diode chips of these light emitting diode units and is arranged on the side of these light emitting diode chips to perform integrated packaging on these light emitting diode chips, the spacing between adjacent light emitting diode chips can be reduced to achieve a compact structure, and the manufacturing cost of the light emitting diode structure can be effectively reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1A is a cross-sectional schematic diagram of a light emitting diode structure according to an embodiment of the present invention;

[0013] Figure 1B yes Figure 1A A top view schematic diagram of a light emitting diode structure;

[0014] Figure 1C Show Figure 1A A schematic cross-sectional view of a light emitting diode unit;

[0015] Figure 1D Show Figure 1A A light emitting diode chip in;

[0016] Figure 2 is a spectrum diagram of the first light beam in FIG1 ;

[0017] Figure 3 1 is a spectrum diagram of the first light beam and the second light beam of the light emitting diode structure;

[0018] Figure 4A Shows Figure 1A Detailed film layers of the short-pass filter coating;

[0019] Figure 4B for Figure 1A The transmittance spectra of the short-pass filter coating at different incident angles;

[0020] Figure 5 for Figure 1A The percentage distribution diagram of light intensity of the light emitting diode structure and the light emitting diode structure without short-pass filter coating at different light emitting angles;

[0021] Figure 6 is a cross-sectional schematic diagram of a light emitting diode structure according to another embodiment of the present invention;

[0022] Fig. 7A is a cross-sectional schematic diagram of a light emitting diode structure according to another embodiment of the present invention;

[0023] Figure 7B for Fig. 7A A top view schematic diagram of a light emitting diode structure;

[0024] Fig. 8A is a cross-sectional schematic diagram of a light emitting diode structure according to yet another embodiment of the present invention;

[0025] Figure 8B for Fig. 8A A top view schematic diagram of a light emitting diode structure;

[0026] Fig. 9 is a cross-sectional schematic diagram of a light emitting diode structure according to another embodiment of the present invention;

[0027] Fig. 10A , Fig. 10B and Fig. 10C Show light Fig. 9 A schematic front view of different light emitting diode units of a light emitting diode structure;

[0028] FIG. 11A to FIG. 11I is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to an embodiment of the present invention;

[0029] FIG. 12A to FIG. 12C is a cross-sectional schematic diagram for illustrating the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention;

[0030] Fig.13 is a cross-sectional schematic diagram illustrating one step of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention;

[0031] FIG. 14A to FIG. 14C FIG. 4 is a cross-sectional schematic diagram showing a partial process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. DETAILED DESCRIPTION

[0032] Reference will now be made in detail to exemplary embodiments of the present invention, examples of which are illustrated in the accompanying drawings. Whenever possible, the same reference numerals are used in the drawings and the description to refer to the same or like parts.

[0033] Figure 1A is a cross-sectional schematic diagram of a light emitting diode structure according to an embodiment of the present invention, Figure 1B yes Figure 1A A top view schematic diagram of a light emitting diode structure, Figure 1C Show Figure 1A A schematic cross-sectional view of a light emitting diode unit in FIG. Figure 1D Show Figure 1A A light-emitting diode chip in Figure 2 is the spectrum of the first beam in Figure 1, and Figure 3 1 is a spectrum diagram of the first light beam and the second light beam of the light emitting diode structure of FIG. Figures 1A to 1D , Figure 2 and Figure 3 The light-emitting diode structure 100 of the present embodiment includes a substrate 110, a plurality of light-emitting diode units 201 and a reflective layer 140. These light-emitting diode units 201 are arranged in an array on the substrate 110, and each light-emitting diode unit 201 includes a light-emitting diode chip 200, a wavelength conversion layer 120 and a short-pass filter coating 130. The light-emitting diode chip 200 is configured on the substrate 110 in a flip-chip manner, and is used to emit a first light beam 202. The wavelength conversion layer 120 is configured on the light-emitting diode chip 200, and is used to convert part of the first light beam 202 into a second light beam 204, wherein the wavelength of the first light beam 202 is smaller than the wavelength of the second light beam 204. The wavelength conversion layer 120 is, for example, a phosphor layer or a quantum dot layer. In the present embodiment, the first light beam 202 is, for example, blue light, and the second light beam 204 is, for example, yellow light, red light or a combination thereof. As Figure 2 and Figure 3 As shown, Figure 2 is the spectrum of the first light beam 202, Figure 3 The left side outside the dotted frame is the spectrum of the first light beam 202, and the left side inside the dotted frame is the spectrum of the second light beam 204, where Figure 3 The dotted frame is the spectrum of the second light beam 204 being yellow light. At this time, the wavelength conversion layer 120 contains yellow phosphor or yellow light quantum dots.

[0034] The short-pass filter coating 130 is disposed between the wavelength conversion layer 120 and the LED chip 200 to allow the first light beam 202 to pass through and to reflect the second light beam 204. In the present embodiment, the short-pass filter coating 130 is disposed on a side of the LED chip 200 away from the substrate 110. In addition, in the present embodiment, the wavelength conversion layer 120 is disposed on a side of the short-pass filter coating 130 away from the substrate 110. The reflective layer 140 fills the gaps between the LED chips 200 of the LED units 201 and is disposed on the side of the LED chips 200. In the present embodiment, the reflective layer 140 covers the side of the wavelength conversion layer 120, such as Figure 1A and Figure 1C Shown.

[0035] In this embodiment, the LED chip 200 includes a growth substrate 210, a first type semiconductor layer 220, a light emitting layer 230, a second type semiconductor layer 240 and an electrode 250. The short pass filter coating 130 is disposed on the growth substrate 210 facing away from the substrate 110 (the substrate 110 is as shown in FIG. 1 ). Figure 1AAs shown, the substrate 110 is located Figure 1D The first-type semiconductor layer 220 is disposed between the growth substrate 210 and the substrate 110, the light-emitting layer 230 is disposed between the first-type semiconductor layer 220 and the substrate 110, the second-type semiconductor layer 240 is disposed between the light-emitting layer 230 and the substrate 110, and the electrode 250 (such as Figure 1A and Figure 1D ) is disposed between the second-type semiconductor layer 240 and the substrate 110 and is electrically connected to the substrate 110.

[0036] In the present embodiment, the electrode 250 can be divided into a first electrode 252 and a second electrode 254. The first electrode 252 can be electrically connected to the first-type semiconductor layer 220 through the conductive via 262, and the second electrode 254 can be electrically connected to the second-type semiconductor layer 240 through the conductive layer 264. In addition, a buffer layer 270 can be provided between the growth substrate 210 and the first-type semiconductor layer 220. In the present embodiment, the first type and the second type are N-type and P-type, respectively. However, in other embodiments, the first type and the second type can also be divided into P-type and N-type. In addition, the light-emitting diode chip 200 may include an insulating layer 280, which covers the second-type semiconductor layer 240 and the light-emitting layer 230, but exposes the second electrode 254, and separates the light-emitting layer 230 from the conductive via 262, and separates the second-type semiconductor layer 240 from the conductive via 262.

[0037] In the LED structure 100 of the present embodiment, since the short-pass filter coating 130 is used to allow the first light beam 202 emitted by the LED chip 200 to pass through and reflect the second light beam 204 from the wavelength conversion layer 120, the loss of the second light beam 204 transmitted to the inside of the LED chip 200 can be effectively reduced, thereby improving the light efficiency of the LED structure 100. Specifically, the first light beam 202 emitted by the LED chip 200 will be transmitted to the wavelength conversion layer 120 after passing through the short-pass filter coating 130, and the wavelength conversion layer 120 will convert part of the first light beam 202 into the second light beam 204. At this time, the second light beam 204 will be transmitted in all directions, and the short-pass filter coating 130 will reflect the second light beam 204 transmitted in the direction of the substrate 110 to avoid it from being transmitted to the inside of the LED chip and causing light loss, and will transmit the second light beam 204 in the direction away from the substrate 110 to form effective light. In this way, the light efficiency of the LED structure 100 can be effectively improved. On the other hand, the short-pass filter coating 130 has an anti-reflection effect on the first light beam 202 , which allows a larger proportion of the first light beam 202 to pass through the short-pass filter coating 130 and be transmitted to the wavelength conversion layer 120 , effectively reducing interface reflection, thereby effectively improving light efficiency.

[0038] In addition, in the LED structure 100 of the present embodiment, since the reflective layer 140 is used to fill the gaps between the multiple LED chips 200 of the LED units 201 and is disposed on the sides of the LED chips 200 to perform integrated packaging on the LED chips 200, the spacing between adjacent LED chips 200 can be reduced to achieve a compact structure, and the manufacturing cost of the LED structure 100 can be effectively reduced.

[0039] In one embodiment, the material of the reflective layer 140 may include resin and scattering particles mixed in the resin, wherein the resin is, for example, epoxy resin, silicone resin, polymethyl methacrylate, ultraviolet glue (UV glue) or photoresist, and the material of the scattering particles is, for example, titanium dioxide, silicon dioxide or boron nitride. The material of the wavelength conversion layer 120 may include resin or glass and phosphor mixed in the resin or glass, wherein the resin is, for example, epoxy resin, silicone resin, polymethyl methacrylate, ultraviolet glue or photoresist, the glass is, for example, silicate glass, soda-lime glass, borosilicate glass or lead glass, and the phosphor is, for example, silicate phosphor, nitride phosphor, nitride yttrium aluminum garnet, yttrium aluminum garnet, potassium fluorosilicate, aluminate phosphor, alpha-SiAlON phosphor or beta-SiAlON phosphor. The substrate 110 is, for example, a printed circuit board, a metal core printed circuit board, a ceramic substrate, a plastic leaded chip carrier (PLCC) or a glass substrate. The material of the electrode 250 can be a metal or an alloy, wherein the metal is, for example, gold, tin, silver, copper or a combination thereof, and the alloy is, for example, a gold-tin alloy or other alloys.

[0040] In one embodiment, the material of the growth substrate 210 includes silicon (Si), silicon carbide (SiC), gallium nitride (GaN), sapphire (sapphire), zinc oxide (ZnO), gallium arsenide (GaAs) or gallium phosphide (GaP). The material of the buffer layer 270 is, for example, gallium nitride, aluminum nitride (AlN) or gallium arsenide. The first-type semiconductor layer 220 is, for example, N-type GaN, AlN, GaAs or GaP, and the second-type semiconductor layer 240 is, for example, P-type GaN, AlN, GaAs or GaP. The material of the light-emitting layer 230 is, for example, GaN and AlGaN are alternately stacked, GaN and InGaN are alternately stacked, GaP and AlGaInP are alternately stacked, GaP and GaAs are alternately stacked, GaAs and AlGaAs are alternately stacked, or GaAs and GaAsP are alternately stacked. The conductive layer 264 is made of, for example, gallium phosphide, indium tin oxide, or nickel. The insulating layer 280 is made of, for example, silicon dioxide, silicon nitride, aluminum oxide, titanium dioxide, zinc oxide, or chromium oxide.

[0041] Figure 4A Shows Figure 1A The short-pass filter coating in the film is a detailed film layer. Figure 4B for Figure 1A The transmittance spectra of the short-pass filter coating at different incident angles are shown in Figure 2. Figure 1A , Figure 1D and Figure 4A In the present embodiment, the short-pass filter coating 130 includes a plurality of low refractive index layers 132 and a plurality of high refractive index layers 134, and these low refractive index layers 132 and these high refractive index layers 134 are alternately stacked on the light-emitting diode chip 200. The refractive index of the high refractive index layer 134 is greater than the refractive index of the low refractive index layer 132. In the present embodiment, the difference between the refractive index of the high refractive index layer 134 and the refractive index of the low refractive index layer 132 is greater than 0.5. In one embodiment, the material of the low refractive index layer 132 is tantalum pentoxide, and the material of the high refractive index layer 134 is silicon dioxide, but the present invention is not limited thereto. The material of the short-pass filter coating 130 can be a metal or a dielectric material, the metal can be any combination of gold, tin, silver and aluminum, and the dielectric material can be any combination of silicon dioxide, tantalum pentoxide and silicon. In the present embodiment, please refer to Figure 4BFor the transmittance spectrum with an incident angle of 0 degrees (i.e., the optical axis direction of the LED structure 100), the transmittance of light with a wavelength less than 500 nanometers (nm) to the short-pass filter coating 130 is greater than 90%, and the transmittance of light with a wavelength greater than 500 nanometers to the short-pass filter coating 130 is less than 5%. In one embodiment, the total number of the low refractive index layers 132 and the high refractive index layers 134 is less than 500 layers, and the thickness of a single layer of the low refractive index layers 132 and the high refractive index layers 134 is about 0.1 nanometer to 500 nanometers.

[0042] Figure 5 for Figure 1A The percentage distribution of light intensity of the LED structure with and without short-pass filter coating at different light output angles. Please refer to Figure 1A and Figure 5 , the curve marked "this embodiment" refers to Figure 1A The curve of the light emitting diode structure 100 is shown in FIG. 1 , and the curve labeled “without short pass filter coating” is shown in FIG. Figure 1A The light emitting diode structure 100 is a structure in which the wavelength conversion layer 120 is directly formed on the light emitting diode chip 200 after the short-pass filter coating 130 is removed, hereinafter referred to as the "light emitting diode structure without the short-pass filter coating". Figure 5 In the figure, the direction of the light output angle of 0 degrees refers to the direction of the optical axis of the light emitting diode structure, and the maximum value of the light intensity of the light emitting diode structure without a short-pass filter coating at different light output angles is defined as the light intensity percentage of 100%. Figure 5 It can be seen that Figure 1A The light emitting diode structure 100 of the present embodiment can improve the light intensity by 80%, which proves that the light emitting diode structure 100 of the present embodiment can effectively improve the light efficiency.

[0043] Figure 6 FIG. 1 is a cross-sectional view of a light emitting diode structure according to another embodiment of the present invention. Figure 6 The light emitting diode structure 100a of this embodiment is similar to Figure 1A The main difference between the two is that in the light emitting diode structure 100a of the present embodiment, the wavelength conversion layer 120 is configured on a portion of the top surface of the reflective layer 140.

[0044] Fig. 7A is a cross-sectional schematic diagram of a light emitting diode structure according to another embodiment of the present invention, and Figure 7B for Fig. 7A Schematic diagram of the top view of the light emitting diode structure. Fig. 7A and Figure 7B The light emitting diode structure 100b of this embodiment is similar to Figure 1AThe main difference between the two is that in the light emitting diode structure 100b of the present embodiment, the wavelength conversion layer 120b covers the top surface of the reflective layer 140.

[0045] Fig. 8A is a cross-sectional schematic diagram of a light emitting diode structure according to yet another embodiment of the present invention, and Figure 8B for Fig. 8A Schematic diagram of the top view of the light emitting diode structure. Fig. 8A and Figure 8B The light emitting diode structure 100c of this embodiment is similar to Figure 1A The main difference between the two is that the light emitting diode structure 100c of the present embodiment further includes a lens 150 disposed on the wavelength conversion layer 120.

[0046] Fig. 9 is a cross-sectional schematic diagram of a light emitting diode structure according to another embodiment of the present invention, and Fig. 10A , Fig. 10B and Fig. 10C Show light Fig. 9 The schematic diagram of the front view of different light emitting diode units of the light emitting diode structure. Please refer to Fig. 9 and FIG. 10A to FIG. 10C The light emitting diode structure 100d of this embodiment is similar to Figure 1A The LED structure 100 of the present embodiment further comprises a projection lens 160 disposed above the LED units 201. In the present embodiment, the LED structure 100d further comprises a driver 170 electrically connected to the LED units 201 and used to independently control the LED units 201, wherein the driver 170 is used to receive a control signal provided by the controller 180 and adjust the different light intensity distributions projected by the LED units 201 in the space through the projection lens 160. For example, Fig. 10A In the case where all the light emitting diode units 201 are lit, Fig. 10B The peripheral LED units 201 are lit while the central LED unit 201 is not lit. Fig. 10C The peripheral LED units 201 are not lit and the central LED unit 201 is lit, wherein Fig. 10A , Fig. 10B and Fig. 10B The light emitting area of ​​the lighted LED unit 201 corresponds to the distribution area of ​​the light spot projected by the projection lens 160 in the space, so that light spots with different distribution conditions can be formed in the space.

[0047] FIG. 11A to FIG. 11IFIG. 1 is a cross-sectional diagram showing the process of a method for manufacturing a light emitting diode structure according to an embodiment of the present invention. FIG. 11A to FIG. 11I The method for manufacturing the light emitting diode structure of the present embodiment can be used to manufacture the light emitting diode structures of the above-mentioned embodiments. Figure 1A The light emitting diode structure 100 of this embodiment is taken as an example. The manufacturing method of the light emitting diode structure of this embodiment includes the following steps. First, please refer to Fig.11A , provide a plurality of LED chips 200, wherein each LED chip 200 has an electrode 250, and the LED chip 200 is provided with a short-pass filter coating 130 on the side facing away from the electrode 250. The details of the LED chip 200 and the short-pass filter coating 130 have been described in detail in the above embodiment and will not be repeated here. Then, firstly, the LED chips 200 are arranged on the first temporary substrate 50, and the electrode 250 faces away from the first temporary substrate 50. Then, please refer to Fig. 11B The gaps between the LED chips 200 and the sides of the LED chips 200 are filled with a reflective layer 140. Fig. 11C , so that the light emitting diode chips 200, the reflective layer 140 and the short-pass filter coating 130 are separated from the first temporary substrate 50. Fig.11D As shown, the LED chips 200 , together with the reflective layer 140 and the short-pass filter coating 130 , are disposed on the second temporary substrate 60 , and the electrodes 250 face the second temporary substrate 60 .

[0048] Next, if Fig.11E As shown, the wavelength conversion layer 120' covers the light emitting diode chips 200. In this embodiment, the wavelength conversion layer 120' covers the reflective layer 140 and the short-pass filter coating 130. Then, in this embodiment, please refer to Fig.11F , cutting the wavelength conversion layer 120' to form a plurality of wavelength conversion layers 120 separated from each other, and these wavelength conversion layers 120 are respectively located on the short-pass filter coating 130. These separated wavelength conversion layers 120 can be regarded as a plurality of separated wavelength conversion units respectively on the light-emitting diode chips 200. Then, as Fig.11G As shown, in this embodiment, the gaps between the cut wavelength conversion layers 120 can be filled with the reflective layer 140, that is, after cutting the wavelength conversion layer 120', the gaps between the wavelength conversion units and the sides of the wavelength conversion units are filled with the material of the reflective layer 140 to increase the height of the reflective layer 140. Fig.11H , so that the LED chips 200, together with the reflective layer 140 and the wavelength conversion layer 120, are separated from the second temporary substrate 60. Fig.11I, the LED chips 200 together with the reflective layer 140 and the wavelength conversion layer 120 are disposed on the substrate 110. In this way, the LED structure 100 is manufactured. The LED structure (e.g., the LED structure 100) manufactured by the method for manufacturing the LED structure of this embodiment can achieve the same effect as that achieved by the LED structure 100 in the above-mentioned embodiment, which will not be repeated here.

[0049] FIG. 12A to FIG. 12C FIG. 1 is a cross-sectional schematic diagram showing the process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. FIG. 12A to FIG. 12C The manufacturing method of the light emitting diode structure of this embodiment can be used to manufacture the light emitting diode structures of the above embodiments, and the following takes the manufacturing of the light emitting diode structure 100 of FIG. 1 as an example for explanation. The manufacturing method of the light emitting diode structure of this embodiment includes the following steps. First, please refer to Fig. 12A , provide a plurality of LED chips 200, wherein each LED chip 200 has an electrode 250, and the LED chip 200 is provided with a short-pass filter coating 130 on the side facing away from the electrode 250. The details of the LED chip 200 and the short-pass filter coating 130 have been described in detail in the above embodiment and will not be repeated here. Then, the LED chips 200 are arranged on the substrate 110, and the electrode 250 faces the substrate 110. Then, please refer to Fig. 12B The gaps between the LED chips 200 and the sides of the LED chips 200 are filled with a reflective layer 140. Fig. 12C , the light emitting diode chips 200 are covered with a wavelength conversion layer 120. The method of forming the wavelength conversion layer 120 may be as follows: Fig.11E In this way, the entire continuous wavelength conversion layer 120' covers the LED chips 200, and then the wavelength conversion layer 120' is cut into a plurality of wavelength conversion layers 120 separated from each other, or a plurality of wavelength conversion layers 120 separated from each other are formed on the LED chips 200. The wavelength conversion layers separated from each other can be regarded as a plurality of wavelength conversion units separated from each other, which cover the LED chips 200 respectively.

[0050] In one embodiment, Fig. 12C After the step of Fig. 9 ) are disposed above these light emitting diode chips 200 to form a similar Fig. 9 The light emitting diode structure 100d.

[0051] Fig.13 FIG. 1 is a cross-sectional view showing one step of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. Fig.13 The manufacturing method of the light emitting diode structure of this embodiment is similar to FIG. 12A to FIG. 12C The manufacturing method of the light emitting diode structure of the embodiment is as follows. FIG. 12A to FIG. 12B Then, proceed as follows Fig.13 In the step of forming a continuous wavelength conversion layer 120b, the entire surface of the LED chips 200 and the reflective layer 140 is covered. FIG. 11A to FIG. 11I In the method for manufacturing the light emitting diode structure, it is also possible not to perform the following steps. Fig.11F The step of cutting the wavelength conversion layer 120' is performed so that a continuous whole wavelength conversion layer 120' remains on the LED chip 200 and the reflective layer 140, and then the LED chip 200 together with the reflective layer 140 and the wavelength conversion layer 120' are separated from the second temporary substrate 60, and then the LED chip 200 together with the reflective layer 140 and the wavelength conversion layer 120' are arranged on the substrate 110.

[0052] FIG. 14A to FIG. 14C FIG. 1 is a cross-sectional diagram showing a partial process of a method for manufacturing a light emitting diode structure according to another embodiment of the present invention. FIG. 14A to FIG. 14C The manufacturing method of the light emitting diode structure of this embodiment is FIG. 11A to FIG. 11I The manufacturing method of the light emitting diode structure of the embodiment is similar to that of the embodiment, and the main differences between the two are as follows. FIG. 11A to FIG. 11G steps, and then proceed Fig.14A In the step of forming a plurality of lenses 150 on the wavelength conversion layer 120 on the light emitting diode chips 200, respectively. Fig. 14B , so that the LED chips 200, together with the reflective layer 140, the wavelength conversion layer 120 and the lens 150, are separated from the second temporary substrate 60. Then, please refer to Fig. 14C The LED chips 200, together with the reflective layer 140, the wavelength conversion layer 120 and the lens 150 are disposed on the substrate 110. FIG. 12A to FIG. 12C In the method for manufacturing a light emitting diode structure, Fig. 12C After the step, a plurality of lenses 150 may be formed on the wavelength conversion layer 120 on the light emitting diode chips 200 .

[0053] In summary, in the light-emitting diode structure and the manufacturing method thereof of the embodiment of the present invention, since a short-pass filter coating is used to allow the first light beam emitted by the light-emitting diode chip to pass through and reflect the second light beam from the wavelength conversion layer, the loss of the second light beam transmitted to the inside of the light-emitting diode chip can be effectively reduced, thereby improving the light efficiency of the light-emitting diode structure. In addition, in the light-emitting diode structure and the manufacturing method thereof of the embodiment of the present invention, since a reflective layer is used to fill the gaps between the multiple light-emitting diode chips of these light-emitting diode units and is configured on the side of these light-emitting diode chips to perform integrated packaging on these light-emitting diode chips, the spacing between adjacent light-emitting diode chips can be reduced to achieve a compact structure, and the manufacturing cost of the light-emitting diode structure can be effectively reduced.

[0054] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode structure, characterized in that: include: substrate; A plurality of light emitting diode units are arranged in an array on the substrate, each light emitting diode unit comprising: A light emitting diode chip is configured on the substrate in a flip chip manner and is used to emit a first light beam; a wavelength conversion layer, disposed on the light-emitting diode chip and used for converting a portion of the first light beam into a second light beam, wherein the wavelength of the first light beam is smaller than the wavelength of the second light beam; and a short-pass filter coating, disposed between the wavelength conversion layer and the light-emitting diode chip, for allowing the first light beam to pass through and for reflecting the second light beam; and The reflective layer fills the gaps between the plurality of light emitting diode chips of the plurality of light emitting diode units and is disposed on the side surfaces of the plurality of light emitting diode chips.

2. The light emitting diode structure according to claim 1, characterized in that: The wavelength conversion layer is a phosphor layer or a quantum dot layer.

3. The light emitting diode structure according to claim 1, characterized in that: The short-pass filter coating is disposed on a side of the light-emitting diode chip away from the substrate.

4. The light emitting diode structure according to claim 3, characterized in that: The wavelength conversion layer is configured on a side of the short-pass filter coating away from the substrate.

5. The light emitting diode structure according to claim 4, characterized in that: The reflective layer covers side surfaces of the wavelength conversion layer.

6. The light emitting diode structure according to claim 4, characterized in that: The wavelength conversion layer covers the top surface of the reflective layer or is disposed on a portion of the top surface of the reflective layer.

7. The light emitting diode structure according to claim 1, characterized in that: The light emitting diode chip comprises: A growth substrate, wherein the short-pass filter coating is disposed on a surface of the growth substrate facing away from the substrate; A first type semiconductor layer is disposed between the growth substrate and the substrate; A light emitting layer, disposed between the first-type semiconductor layer and the substrate; A second type semiconductor layer is disposed between the light emitting layer and the substrate; The electrode is disposed between the second-type semiconductor layer and the substrate and is electrically connected to the substrate.

8. The light emitting diode structure according to claim 1, characterized in that: The light emitting diode unit further includes a lens configured on the wavelength conversion layer.

9. The light emitting diode structure according to claim 1, characterized in that: The invention also comprises a projection lens, which is arranged above the plurality of light emitting diode units.

10. The light emitting diode structure according to claim 9, characterized in that: Also includes: A driver is electrically connected to the plurality of LED units and used to independently control the plurality of LED units, wherein the driver is used to receive a control signal provided by a controller to adjust the different light illumination distributions projected by the plurality of LED units in the space via the projection lens.

11. A method for manufacturing a light emitting diode structure, characterized in that: include: Providing a plurality of light-emitting diode chips, wherein each light-emitting diode chip has an electrode, and a short-pass filter coating is provided on a side of the light-emitting diode chip facing away from the electrode; Disposing the plurality of light-emitting diode chips on a first temporary substrate, with the electrodes facing away from the first temporary substrate; Filling the gaps between the plurality of light-emitting diode chips and the sides of the plurality of light-emitting diode chips with a reflective layer; Separating the plurality of light-emitting diode chips together with the reflective layer from the first temporary substrate; Disposing the plurality of light emitting diode chips together with the reflective layer on a second temporary substrate, and making the electrode face the second temporary substrate; Covering the plurality of light emitting diode chips with a wavelength conversion layer; Separating the plurality of light-emitting diode chips together with the reflective layer and the wavelength conversion layer from the second temporary substrate; as well as The plurality of light emitting diode chips, the reflective layer and the wavelength conversion layer are disposed on a substrate.

12. The method for manufacturing a light emitting diode structure according to claim 11, characterized in that: Also includes: After covering the plurality of LED chips with the wavelength conversion layer, the wavelength conversion layer is cut corresponding to the plurality of LED chips to form a plurality of wavelength conversion units respectively above the plurality of LED chips.

13. The method for manufacturing a light emitting diode structure according to claim 12, characterized in that: Also includes: After the wavelength conversion layer is cut, the gaps between the wavelength conversion units and the sides of the wavelength conversion units are filled with the material of the reflection layer to increase the height of the reflection layer.

14. The method for manufacturing a light emitting diode structure according to claim 11, characterized in that: When the plurality of light emitting diode chips together with the reflective layer and the wavelength conversion layer are arranged on a substrate, the wavelength conversion layer entirely covers the plurality of light emitting diode chips and the reflective layer.

15. The method for manufacturing a light emitting diode structure according to claim 11, characterized in that: Also includes: A plurality of lenses are formed on the wavelength conversion layers on the plurality of light emitting diode chips respectively.

16. A method for manufacturing a light emitting diode structure, characterized in that: include: Providing a plurality of light-emitting diode chips, wherein each light-emitting diode chip has an electrode, and a short-pass filter coating is provided on a side of the light-emitting diode chip facing away from the electrode; Disposing the plurality of light emitting diode chips on a substrate, with the electrodes facing the substrate; Filling the gaps between the plurality of light emitting diode chips and the sides of the plurality of light emitting diode chips with a reflective layer; and The plurality of light emitting diode chips are covered with a wavelength conversion layer.

17. The method for manufacturing a light emitting diode structure according to claim 16, characterized in that: The wavelength conversion layer includes a plurality of wavelength conversion units separated from each other and respectively covering the plurality of light emitting diode chips.

18. The method for manufacturing a light emitting diode structure according to claim 16, characterized in that: The wavelength conversion layer is a continuous whole piece, and covers the plurality of light emitting diode chips and the reflective layer entirely.

19. The method for manufacturing a light emitting diode structure according to claim 16, characterized in that: Also includes: A plurality of lenses are formed on the wavelength conversion layers on the plurality of light emitting diode chips respectively.

20. The method for manufacturing a light emitting diode structure according to claim 16, characterized in that: Also includes: The projection lens is arranged above the plurality of light emitting diode chips.

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