Batch type plasma pretreatment device

Abstract

The invention provides a batch type plasma pretreatment device, and relates to the technical field of vacuum coating. Comprising at least one set of process chambers, and each process chamber is provided with an air exhaust system; the at least one group of plasma generation system adopts at least one mode of inductively coupled plasma, capacitively coupled plasma and a remote plasma source to convey plasma into the process chamber; the at least one group of process gas conveying system is connected to the plasma generating system so as to convey process gas to the plasma generating system; a material tray is arranged in the process chamber, and a single-layer sample rack or a multi-layer sample rack is placed on the tray. According to the scheme, surface treatment processes such as plasma surface cleaning, surface activation, surface defect and vacancy repair and the like can be realized.

Description

Technical Field

[0001] The present invention relates to the field of vacuum coating technology, and in particular to a batch plasma pretreatment device. Background Art

[0002] In semiconductor preparation, processes such as plasma surface cleaning, surface activation, and surface defect repair are involved on the surface of the substrate. However, existing plasma pretreatment equipment has problems such as low concentration, low concentration of active free radicals, and large plasma damage, and the plasma temperature rise effect is high, resulting in slow pretreatment efficiency and poor effect. CN117915535A discloses a method and device for improving the uniformity and repeatability of glow plasma pretreatment, which significantly improves the uniformity and repeatability of glow plasma pretreatment of flexible organic thin films by optimizing electrode structure, electrode plate distance, and treatment process. However, in this scheme, the electrode structure adopts two parallel electrode plates, and the electrode plates are arranged in the process chamber, which does not solve the problems of high plasma temperature rise effect and occupies a large process chamber space. Summary of the invention

[0003] The present invention discloses a batch plasma pretreatment device, aiming to improve the above-mentioned problems.

[0004] The present invention adopts the following scheme:

[0005] A batch plasma pretreatment device, comprising:

[0006] At least one group of process chambers, each of which is provided with a gas extraction system;

[0007] At least one plasma generating system, wherein the plasma generating device uses at least one of inductively coupled plasma, capacitively coupled plasma, and a remote plasma source to deliver plasma into the process chamber;

[0008] at least one set of process gas delivery systems, the process gas delivery systems being connected to the plasma generating system to deliver process gas to the plasma generating system;

[0009] A material tray is arranged in the process chamber, and a single-layer sample rack or a multi-layer sample rack is placed on the tray.

[0010] Furthermore, the plasma generating system includes a plasma chamber disposed above the process chamber, a solenoid-type plasma RF coil is arranged outside the plasma chamber, and the plasma RF coil is connected to a RF power supply to generate plasma in the plasma chamber.

[0011] Furthermore, an air inlet flow plate is provided at the inlet end of the plasma chamber, and a plasma flow plate is provided at the outlet end.

[0012] Furthermore, the plasma generating system includes a plasma chamber arranged above the process chamber, a planar coil type plasma RF coil is arranged at the upper end of the plasma chamber, the process gas delivery system is connected to the bottom of the planar coil type plasma RF coil, and the plasma RF coil is connected to a RF power supply to generate plasma in the plasma chamber.

[0013] Furthermore, the plasma generating system includes a plasma chamber arranged above the process chamber, wherein an upper electrode plate and a lower electrode plate arranged in parallel are arranged in the plasma chamber, and the upper electrode plate and the lower electrode plate are connected to a radio frequency power supply to generate plasma in the plasma chamber and transport it to the material tray.

[0014] Furthermore, the plasma generating system is configured as a remote plasma source, and the remote plasma source is connected to the process gas delivery system to generate plasma, and delivers the plasma to the process chamber through a delivery channel.

[0015] Furthermore, the process gas delivery system is suitable for delivering process gas into the plasma generating system, and the process gas is one or more of O2, Ar, H2, N2, NH3, CO, CO2, NF3, Cl2, CH4, CF4, C4F6, and C3F8.

[0016] Beneficial effects:

[0017] In the present invention, the pretreatment device can perform plasma surface cleaning, surface activation, surface defect and vacancy repair and other surface treatment processes on the surface of the substrate through a plasma generating system arranged above the process chamber, so that the surface of the substrate has higher cleanliness, more active sites, and fewer defects, so that the material can be better processed in subsequent processes; it is particularly suitable for the pretreatment links of processes such as vacuum coating and surface coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 1 is a schematic structural diagram of a batch plasma pretreatment device with a solenoid-type plasma radio frequency coil according to an embodiment of the present invention;

[0019] Figure 2 It is a structural schematic diagram of a batch plasma pretreatment device with a planar coil type plasma radio frequency coil according to an embodiment of the present invention;

[0020] Figure 3is a schematic structural diagram of a batch plasma pretreatment device with a flat-plate plasma generating system according to an embodiment of the present invention;

[0021] Figure 4 1 is a schematic structural diagram of a batch plasma pretreatment device with a remote plasma source according to an embodiment of the present invention;

[0022] Icons: process chamber 1, heating device 2, temperature control system 3, vacuum gauge 4, plug valve 5, solenoid type plasma RF coil 6, cooling water pipeline 7, air inlet uniform flow plate 8, plasma uniform flow plate 9, material tray 10, substrate 11, plasma chamber 12, planar coil type plasma RF coil 13, first RF coil 131, second RF coil 132, upper electrode plate 14, lower electrode plate 15, remote plasma source 16, conveying channel 17, exhaust system 18, process gas delivery system 19, RF power supply 20. DETAILED DESCRIPTION

[0023] Example 1

[0024] Combination Figures 1 to 4 As shown, this embodiment provides a batch plasma pretreatment device, including: at least one group of process chambers 1, on which a vacuum system 18 is arranged; at least one group of plasma generating systems, the plasma generating device adopts at least one of inductively coupled plasma, capacitively coupled plasma, and a remote plasma source 16 to deliver plasma into the process chamber 1; at least one group of process gas delivery systems 19, the process gas delivery system 19 is connected to the plasma generating system to deliver process gas to the plasma generating system; a material tray 10 is arranged in the process chamber 1, and a single-layer sample rack or a multi-layer sample rack is placed on the tray.

[0025] In this embodiment, the process chamber 1 may be provided with one or more groups, and the process chamber 1 is connected to the exhaust system 18 to achieve a vacuum environment in the process chamber 1. The plasma generating system is arranged above the process chamber 1 and directly faces the material tray 10 to directly deliver plasma to the substrate 11 on the material tray 10. The substrate 11 may be a 4-8 inch silicon wafer, glass, ceramic, polymer material, metal, PCB circuit board, etc., and the material form may be a round piece, a square piece, a film, etc. The process gas delivery system 19 includes a plurality of purge pipelines and carrier gas pipelines to deliver a variety of process gases and carrier gases simultaneously or separately, and each pipeline is provided with a valve and a gas flow meter.

[0026] The plasma generating system may adopt at least one of inductively coupled plasma, capacitively coupled plasma, and remote plasma source 16, and may be a single one, or may be a combination of two or more plasma generating systems to improve the plasma generating effect of the plasma generating system. The material tray 10 may be provided with a single-layer sample rack, or may be provided with a multi-layer sample rack to improve the efficiency of each batch of pretreatment.

[0027] A heating device 2 is provided outside the process chamber 1, and the heating device 2 is connected to a temperature control system 3 for controlling the temperature of the process chamber 1. The process chamber 1 is also connected to a vacuum gauge 4 for controlling the vacuum degree inside the process chamber 1. A gate valve 5 is further provided to facilitate the storage and access of materials.

[0028] The pretreatment device can be used to perform surface treatment processes such as plasma surface cleaning, surface activation, surface defects, and vacancy repair on the substrate surface, so that the substrate surface has higher cleanliness, more active sites, and fewer defects, so that the material can be better processed in subsequent processes. It is especially suitable for the pretreatment links of vacuum coating, surface coating and other processes.

[0029] Example 2

[0030] Combination Figure 1 As shown, in this embodiment, the plasma generating system includes a plasma chamber 12 disposed above the process chamber 1, and a solenoid-type plasma radio frequency coil 6 is arranged outside the plasma chamber 12, and the plasma radio frequency coil is connected to a radio frequency power supply 20 to generate plasma in the plasma chamber 12. In this embodiment, inductive coupling is used to generate plasma, and the plasma chamber 12 extends longitudinally. The plasma radio frequency coil has a solenoid-type structure to be wound in the plasma chamber 12, and the process gas delivery system 19 is connected to the top of the plasma chamber 12. Through the solenoid-type plasma radio frequency coil 6, the ionization stroke in the plasma chamber 12 is longer, the continuously generated plasma concentration is higher, the active free radical concentration is high, the gas pressure working range is wide, and the plasma temperature rise effect is weak. In addition, a cooling water pipeline 7 is arranged outside the plasma radio frequency coil for cooling.

[0031] In a preferred embodiment, the inlet end of the plasma chamber 12 is provided with an inlet flow plate 8, and the outlet end is provided with a plasma flow plate 9. The inlet flow plate 8 is used to make the process gas more uniform in the plasma chamber 12, and the plasma flow plate 9 is provided at the outlet end of the plasma chamber 12 to make the plasma entering the process chamber 1 more uniform.

[0032] Example 3

[0033] Combination Figure 2 As shown, in this embodiment, the plasma generating system includes a plasma chamber 12 disposed above the process chamber 1, a planar coil type plasma RF coil 13 is disposed at the upper end of the plasma chamber 12, the process gas delivery system 19 is connected to the bottom of the planar coil type plasma RF coil 13, and the plasma RF coil is connected to the RF power supply 20 to generate plasma in the plasma chamber 12. In this embodiment, plasma is generated by inductive coupling, and the plasma RF coil is disposed directly above the plasma, and includes a first RF coil 131 and a second RF coil 132, which are respectively distributed at the top of the plasma chamber 12 and connected to the RF power supply 20 to form plasma by inductive coupling downward. This scheme can reduce the height of the plasma chamber 12, and the height requirement of the plasma chamber 12 is relatively low, and the use of a planar coil has little damage to the plasma body, the range of plasma generation is large, and the structural maintenance is simpler. It should be noted that in this embodiment, a plasma chamber wall is disposed on the inner wall of the plasma chamber 12, and a process gas flow plate is disposed below the plasma chamber wall.

[0034] Example 4

[0035] Combination Figure 3 As shown, the plasma generating system includes a plasma chamber 12 disposed above the process chamber 1, and an upper electrode plate 14 and a lower electrode plate 15 disposed in parallel are disposed in the plasma chamber 12, and the upper electrode plate 14 and the lower electrode plate 15 are connected to a radio frequency power supply 20 to generate plasma in the plasma chamber 12 and transport it to the material tray 10. The lower electrode plate 15 is disposed at the lower end side of the plasma chamber 12, and the upper electrode plate 14 and the lower electrode plate 15 are used to form plasma by capacitive coupling. Through this solution, the energy of the ions is high, the gas types are widely applicable, and the structure is simple to maintain, and at the same time, the height requirement for the plasma chamber 12 is relatively low.

[0036] Example 5

[0037] Combination Figure 4 As shown, the plasma generating system is configured as a remote plasma source 16 , and the remote plasma source 16 is connected to the process gas delivery system 19 to generate plasma, and delivers the plasma to the process chamber 1 through a delivery channel 17 .

[0038] In this embodiment, by separately setting up the plasma generating system and the process chamber, connecting the two through a delivery pipeline, and delivering plasma to the process chamber 1 through the remote plasma source 16, the volume of the entire device can be reduced, and the form of the remote plasma source 16 can be more diverse, not limited by the volume and size of the process chamber 1. Here, the remote plasma source 16 can adopt an existing plasma generating device, which is used to connect the process gas delivery system 19 and generate plasma. Through this solution, the flux of plasma can be larger, and the modular design facilitates the replacement and cleaning of the plasma source, and the process window can be wider.

[0039] In the above embodiment, the process gas delivery system 19 is suitable for delivering process gas into the plasma generating system, and the process gas is one or more of O2, Ar, H2, N2, NH3, CO, CO2, NF3, Cl2, CH4, CF4, C4F6, C3F8, including but not limited to these, and the applicable gas types have a wide range of applications.

[0040] In other embodiments, two or three structures of the plasma generating systems in the above embodiments 2-5 can be selected and integrated into the same process chamber to meet the requirements of high plasma flux, for example, combining a remote plasma source with an inductively coupled plasma or a capacitively coupled plasma.

[0041] It should be understood that the above are only preferred implementations of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All technical solutions under the concept of the present invention belong to the protection scope of the present invention.

[0042] The above description of the drawings used in the implementation manner only illustrates certain embodiments of the present invention and should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

Claims

1. A batch plasma pretreatment device, characterized in that: include: At least one group of process chambers, each of which is provided with a gas extraction system; At least one plasma generating system, wherein the plasma generating device uses at least one of inductively coupled plasma, capacitively coupled plasma, and a remote plasma source to deliver plasma into the process chamber; at least one set of process gas delivery systems, the process gas delivery systems being connected to the plasma generating system to deliver process gas to the plasma generating system; A material tray is arranged in the process chamber, and a single-layer sample rack or a multi-layer sample rack is placed on the tray.

2. The batch plasma pretreatment device according to claim 1, characterized in that: The plasma generating system comprises a plasma chamber disposed above the process chamber, a solenoid-type plasma radio frequency coil is arranged outside the plasma chamber, and the plasma radio frequency coil is connected to a radio frequency power supply to generate plasma in the plasma chamber.

3. The batch plasma pretreatment device according to claim 2, characterized in that: The inlet end of the plasma chamber is provided with an air inlet flow plate, and the outlet end is provided with a plasma flow plate.

4. The batch plasma pretreatment device according to claim 1, characterized in that: The plasma generating system comprises a plasma chamber disposed above the process chamber, a planar coil type plasma RF coil is disposed at the upper end of the plasma chamber, the process gas delivery system is connected to the lower part of the planar coil type plasma RF coil, and the plasma RF coil is connected to a RF power supply to generate plasma in the plasma chamber.

5. The batch plasma pretreatment device according to claim 1, characterized in that: The plasma generating system comprises a plasma chamber disposed above the process chamber, wherein an upper electrode plate and a lower electrode plate disposed in parallel are disposed in the plasma chamber, and the upper electrode plate and the lower electrode plate are connected to a radio frequency power supply to generate plasma in the plasma chamber and transport the plasma to the material tray.

6. The batch plasma pretreatment device according to claim 1, characterized in that: The plasma generating system is configured as a remote plasma source, and the remote plasma source is connected to the process gas delivery system to generate plasma, and delivers the plasma to the process chamber through a delivery channel.

7. The batch plasma pretreatment device according to claim 1, characterized in that: The process gas delivery system is suitable for delivering process gas into the plasma generating system, and the process gas is one or more of O2, Ar, H2, N2, NH3, CO, CO2, NF3, Cl2, CH4, CF4, C4F6, and C3F8.

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