Cooler and cooling structure of semiconductor device

Abstract

The cooler is provided with: a case having an opening, a hollow portion, and a bottom; and a partition wall standing in a first direction from the bottom portion and housed in the hollow portion. The housing is provided with an inflow path and an outflow path which are respectively connected with the hollow part. The hollow part comprises a first storage part and a second storage part which are divided by the partition wall. The first reservoir is connected to the inflow path. The second reservoir is connected to the outflow path. The partition wall has an overflow portion that overlaps the opening portion when viewed in the first direction and is farthest from the bottom portion. The overflow portion is located between the bottom portion and the opening portion.

Description

Technical Field

[0001] The present disclosure relates to a cooler and a cooling structure for a semiconductor device in which the semiconductor device is mounted on the cooler. Background Art

[0002] Patent document 1 discloses an example of a cooler equipped with a semiconductor device. The cooler includes a housing having a hollow region and a radiator. The housing is provided with an opening passing through the hollow region. The radiator is mounted on the housing in a manner that blocks the opening. A portion of the radiator is accommodated in the hollow region. The semiconductor device is joined to a portion of the radiator extending from the hollow region to the outside. If a refrigerant is allowed to flow down in the hollow region, the refrigerant contacts the radiator. Thus, the semiconductor device can be cooled via the radiator.

[0003] In the cooler disclosed in Patent Document 1, the radiator interferes with the flow direction of the refrigerant. As a result, energy loss of the refrigerant flow occurs, so there is a possibility that the refrigerant cannot spread throughout the entire portion of the radiator accommodated in the hollow area. This is the main reason for the reduction in the cooling efficiency of the cooler.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: International Publication No. 2017 / 094370 Summary of the invention

[0007] Problems to be solved by the invention

[0008] One of the problems of the present disclosure is to provide a cooler that is improved compared to the past, and a cooling structure for a semiconductor device. In particular, one of the problems of the present disclosure is to provide a cooler that can suppress the energy loss of the flow of the refrigerant and improve the cooling efficiency, and a mounting structure for the cooler and the semiconductor device in view of the above-mentioned situation.

[0009] Solutions to Solve Problems

[0010] The cooler provided by the first scheme of the present disclosure comprises: a box body, which has: an opening portion, which is located on one side of the first direction; an inner hollow portion, which is connected to the above-mentioned opening portion; and a bottom, which is located on the side opposite to the above-mentioned opening portion with the above-mentioned inner hollow portion as a reference and defines a part of the above-mentioned inner hollow portion; and a partition wall, which stands up from the above-mentioned bottom along the above-mentioned first direction and is accommodated in the above-mentioned inner hollow portion. The above-mentioned box body is provided with an inlet path and an outlet path respectively connected to the above-mentioned inner hollow portion. The above-mentioned inner hollow portion includes a first storage portion and a second storage portion divided by the above-mentioned partition wall. The above-mentioned first storage portion is connected to the above-mentioned inlet path, and the above-mentioned second storage portion is connected to the above-mentioned outlet path. The above-mentioned partition wall has an overflow portion, which overlaps with the above-mentioned opening portion when viewed in the above-mentioned first direction and is farthest from the above-mentioned bottom. The above-mentioned overflow portion is located between the above-mentioned bottom and the above-mentioned opening portion.

[0011] The cooling structure of the semiconductor device provided by the second embodiment of the present disclosure is the cooler provided by the first embodiment of the present disclosure, wherein the overflow portion includes a cooler away from the opening portion in the first direction, and a semiconductor device mounted on the cooler. The semiconductor device is mounted on the housing. The semiconductor device blocks the opening portion.

[0012] The cooling structure of the semiconductor device provided by the third scheme of the present disclosure is the cooler provided by the first scheme of the present disclosure, and further comprises a cover member, the cover member having a base surface opposite to the opening portion and blocking the opening portion. The overflow portion comprises a cooler away from the base surface, and a semiconductor device mounted on the cooler. The semiconductor device is mounted on the cover member. When viewed in the first direction, the semiconductor device overlaps with the opening portion.

[0013] The installation structure of the cooler and semiconductor device provided by the fourth scheme of the present disclosure comprises: a cooler, which is provided with a plurality of inner hollow parts respectively recessed in a first direction and arranged in a direction orthogonal to the above-mentioned first direction; and a plurality of semiconductor devices, which are installed on the above-mentioned cooler. When observed in the above-mentioned first direction, the above-mentioned plurality of semiconductor devices overlap with the above-mentioned plurality of inner hollow parts respectively. The above-mentioned cooler is provided with a plurality of inflow paths and a plurality of outflow paths set as a system different from the above-mentioned plurality of inflow paths. The above-mentioned plurality of inflow paths are connected to the above-mentioned plurality of inner hollow parts respectively. The above-mentioned plurality of outflow paths are connected to the above-mentioned plurality of inner hollow parts respectively.

[0014] Effects of the Invention

[0015] According to the above configuration, it is possible to suppress energy loss in the flow of the refrigerant and improve the cooling efficiency.

[0016] Other features and advantages of the present disclosure will become more apparent from the following detailed description based on the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is an exploded perspective view of the cooler according to the first embodiment of the present disclosure.

[0018] Figure 2 yes Figure 1 A top view of the cooler is shown.

[0019] Figure 3 yes Figure 1 Bottom view of the cooler is shown.

[0020] Figure 4 yes Figure 1 The illustrated perspective view of a housing included in the cooler omits the bottom portion of the housing.

[0021] Figure 5 is along Figure 2 Cross-sectional view of the V-V line.

[0022] Figure 6 is along Figure 2 Cross-sectional view of line VI-VI.

[0023] Figure 7 is along Figure 2 Cross-sectional view along line VII-VII.

[0024] Figure 8 is along Figure 2 Cross-sectional view along line VIII-VIII.

[0025] Fig. 9 yes Fig. 22 A perspective view of a semiconductor device included in a cooling structure for a semiconductor device shown.

[0026] Fig.10 yes Fig. 9 A top view of a semiconductor device is shown.

[0027] Fig.11 is with Fig.10 Corresponding top view, through the mounting resin.

[0028] Fig.12 yes Fig.11 A partial enlarged view of .

[0029] Fig.13 is with Fig.10 In the corresponding top view, the first conductive member is shown through, and the sealing resin and the second conductive member are omitted from illustration.

[0030] Fig.14 yes Fig. 9 Right side view of the semiconductor device shown.

[0031] Fig.15 yes Fig. 9 A bottom view of the semiconductor device is shown.

[0032] Fig.16 is along Fig.11 Cross-sectional view along line XVI-XVI.

[0033] Fig.17 is along Fig.11 Cross-sectional view along line XVII-XVII.

[0034] Fig.18 yes Fig.17 A partial enlarged view of the first element and its surroundings is shown.

[0035] Fig.19 yes Fig.17 A partial enlarged view of the second element and its surroundings is shown.

[0036] Fig. 20 is along Fig.11 Cross-sectional view of the XX-XX line.

[0037] Fig.21 is along Fig.11 Cross-sectional view of line XXI-XXI.

[0038] Fig. 22 It is a top view of the cooling structure of the semiconductor device according to the first embodiment of the present disclosure.

[0039] Fig.23 is along Fig. 22 Cross-sectional view of line XXIII-XXIII.

[0040] Fig.24 It is an exploded perspective view of a cooler according to a second embodiment of the present disclosure.

[0041] Fig.25 yes Fig.24 A top view of the cooler is shown.

[0042] Fig.26 is along Fig.25 Cross-sectional view of line XXVI-XXVI.

[0043] Fig. 27 is along Fig.25 Cross-sectional view of line XXVII-XXVII.

[0044] Fig.28 yes Fig.24 A perspective view of a cover member included in the cooler shown.

[0045] Fig.29 It is a plan view of a cooling structure of a semiconductor device according to a second embodiment of the present disclosure.

[0046] Fig.30 is along Fig.29 Cross-sectional view of the XXX-XXX line.

[0047] Fig.31 It is a top view of the cooler according to the third embodiment of the present disclosure, with the cover member being seen through.

[0048] Fig.32 is along Fig.31 Cross-sectional view of line XXXII-XXXII.

[0049] Fig.33 is along Fig.31 Cross-sectional view of line XXXIII-XXXIII.

[0050] Fig.34 It is a top view of a cooler according to a fourth embodiment of the present disclosure.

[0051] Fig.35 is along Fig.34 Cross-sectional view of line XXXV-XXXV.

[0052] Fig.36 is along Fig.34 Cross-sectional view along line XXXVI-XXXVI.

[0053] Fig.37 is along Fig.34 Cross-sectional view along line XXXVII-XXXVII.

[0054] Fig.38 It is a plan view of a cooling structure of a semiconductor device according to a third embodiment of the present disclosure. DETAILED DESCRIPTION

[0055] A mode for implementing the present disclosure will be described based on the drawings.

[0056] First embodiment (cooler):

[0057] based on Figures 1 to 8 , a cooler A10 according to a first embodiment of the present disclosure is described. The cooler A10 is used to cool a semiconductor device B provided in a cooling structure C10 described later. The cooler A10 includes a housing 70 and a partition wall 81. Figure 4 In the figure, for ease of understanding, the bottom 72 of the box body 70 described later is omitted.

[0058] In the description of the cooler A10, for convenience, the normal direction of the main surface 71A of the housing 70 described later is referred to as the "first direction z". The direction orthogonal to the first direction z is referred to as the "second direction x". The direction orthogonal to the first direction z and the second direction x is referred to as the "third direction y". The first direction z, the second direction x, and the third direction y are also applicable to the description of the semiconductor device B and the cooling structure C10 described later.

[0059] like Figure 1 As shown, the box body 70 has a main body 71 and a bottom 72. The bottom 72 is mounted on the main body 71. In the cooler A10, the main body 71 and the bottom 72 are respectively made of a material containing resin. In addition, the main body 71 and the bottom 72 may also be respectively made of a material containing metal. In the implementation of the present disclosure, the materials of the main body 71 and the bottom can be freely selected.

[0060] like Figure 1 , Figure 2 ,as well as Figure 5 to Figure 7 As shown, the main body 71 has a main surface 71A and an opening 711. The main surface 71A faces one side in the first direction z. The opening 711 is located on one side in the first direction z. The opening 711 is connected to the main surface 71A and is surrounded by the main surface 71A.

[0061] like Figure 5 to Figure 7 As shown, the bottom portion 72 is located on the side of the main body 71 opposite to the opening 711 with reference to the inner hollow portion 73 described later. The bottom portion 72 blocks the main body 71. The bottom portion 72 has a back surface 72A. The back surface 72A faces the side of the main body 71 opposite to the main surface 71A in the first direction z.

[0062] like Figure 2 ,as well as Figures 4 to 8 As shown, the box body 70 has an inner hollow portion 73. The inner hollow portion 73 is connected to the opening portion 711 of the main body 71. The inner hollow portion 73 is located inside the main body 71. The main body 71 and the bottom 72 define a part of the inner hollow portion 73.

[0063] like Figure 1 , Figure 3 as well as Figure 5As shown, an inlet passage 74 and an outlet passage 75 are provided at the bottom 72. The inlet passage 74 and the outlet passage 75 are respectively connected to the inner hollow portion 73, and penetrate the bottom 72 in the first direction z. The inlet passage 74 and the outlet passage 75 are separated from each other in the third direction y. The inlet passage 74 has an inlet portion 741. The inlet portion 741 is connected to the back surface 72A. The outlet passage 75 has an outflow portion 751. The outflow portion 751 is connected to the back surface 72A. Connecting components (not shown) for supplying refrigerant from the outside or for discharging refrigerant to the outside are respectively installed at the inlet portion 741 and the outflow portion 751.

[0064] like Figure 2 ,as well as Figures 4 to 8 As shown, the partition wall 81 is accommodated in the inner hollow portion 73 of the box body 70. The partition wall 81 stands up from the bottom 72 along the first direction z. In the cooler A10, the partition wall 81 is made of a material containing resin. The partition wall 81 is integrated with the main body 71. In addition, the partition wall 81 can also be a structure installed on the main body 71. The partition wall 81 is exposed from the opening 711 of the main body 71.

[0065] like Figure 2 as well as Figure 4 As shown, the inner hollow portion 73 includes a first storage portion 731 and a second storage portion 732 divided by the partition wall 81. Figure 3 as well as Figure 5 As shown, the first storage part 731 is connected to the inflow path 74 , and the second storage part 732 is connected to the outflow path 75 .

[0066] like Figure 1 , Figure 2 ,as well as Figure 5 to Figure 7 As shown, the partition wall 81 has an overflow portion 811. When viewed in the first direction z, the overflow portion 811 overlaps with the opening portion 711 of the main body portion 71. The overflow portion 811 is farthest from the bottom 72. The overflow portion 811 is located between the bottom 72 and the opening portion 711 in the first direction z. In the cooler A10, the overflow portion 811 is far away from the opening portion 711 in the first direction z.

[0067] In the cooler A10, the refrigerant is supplied from the outside through the inflow section 741. The supplied refrigerant flows into the first storage section 731 through the inflow path 74. If the supply of the refrigerant continues, the liquid level of the refrigerant flowing into the first storage section 731 rises. Then, if the liquid level of the refrigerant rises to a position farther from the bottom 72 than the overflow section 811 of the partition wall 81, the refrigerant flows over the overflow section 811 and flows down to the second storage section 732. The refrigerant flowing down to the second storage section 732 is discharged from the outflow section 751 to the outside through the outflow path 75. Therefore, the flow of the refrigerant in the inner hollow section 73 contains a component of the flow in the first direction z. The refrigerant discharged to the outside from the outflow section 751 is cooled again. Then, the refrigerant is supplied again from the inflow section 741, thereby enabling the refrigerant to circulate in the cooler A10 and the outside.

[0068] like Figure 2 to Figure 4 As shown, the partition wall 81 includes a first partition wall 81A and a second partition wall 81B. When viewed in the first direction z, the first partition wall 81A and the second partition wall 81B overlap with the opening 711 of the main body 71. The first partition wall 81A and the second partition wall 81B are separated from each other in the second direction x. The first partition wall 81A and the second partition wall 81B extend in the third direction y respectively. The first partition wall 81A and the second partition wall 81B each include an overflow portion 811.

[0069] like Figure 2 as well as Figure 4 As shown, in the cooler A10, the first storage portion 731 is located between the first partition wall 81A and the second partition wall 81B. When viewed in the first direction z, the first storage portion 731 overlaps with the center C of the opening portion 711 of the main body 71. In addition, a structure can be adopted in which the second storage portion 732 is located between the first partition wall 81A and the second partition wall 81B by making the configuration of the inflow path 74 opposite to the configuration of the outflow path 75. Therefore, in the cooler A10, any one of the first partition wall 81A and the second partition wall 81B is located between the first partition wall 81A and the second partition wall 81B.

[0070] like Figure 2 to Figure 4As shown, the partition wall 81 includes a third partition wall 81C, a fourth partition wall 81D and a fifth partition wall 81E. The third partition wall 81C is located on the side opposite to the inflow path 74 with the first partition wall 81A and the second partition wall 81B as reference in the third direction y. The third partition wall 81C connects the first partition wall 81A and the second partition wall 81B. The fourth partition wall 81D and the fifth partition wall 81E are located on the side opposite to the third partition wall 81C with the first partition wall 81A and the second partition wall 81B as reference. The fourth partition wall 81D connects the first partition wall 81A and the main body 71. The fifth partition wall 81E connects the second partition wall 81B and the main body 71. The third partition wall 81C, the fourth partition wall 81D and the fifth partition wall 81E respectively include a first curved surface opposite to the first storage portion 731 and a second curved surface opposite to the second storage portion 732.

[0071] (Semiconductor device B)

[0072] Next, based on Figures 9 to 21 , a semiconductor device B included in the cooling structure C10 described later is described. The semiconductor device B includes a substrate 11, a first conductive layer 121, a second conductive layer 122, a first input terminal 13, an output terminal 14, a second input terminal 15, a first signal terminal 161, a second signal terminal 162, a plurality of semiconductor elements 21, a first conductive component 31, a second conductive component 32, and a sealing resin 50. In addition, the semiconductor device B includes a third signal terminal 171, a fourth signal terminal 172, a pair of fifth signal terminals 181, a pair of sixth signal terminals 182, a seventh signal terminal 19, a pair of thermistors 22, and a pair of control wirings 60. Here, in Fig.11 as well as Fig.12 In the figure, the sealing resin 50 is shown for easier understanding. Fig.11 In FIG. 5 , the sealing resin 50 that is transmitted is indicated by an imaginary line (two-dot chain line). Fig.13 In the figure, for ease of understanding, the first conductive component 31 is shown through, and the second conductive component 32 and the sealing resin 50 are omitted. Fig.13 In FIG. 1 , the first conductive component 31 is shown as a virtual line. Fig.11 In FIG, the XVII-XVII line is represented by a dash-dotted line.

[0073] The semiconductor device B converts the DC power supply voltage applied to the first input terminal 13 and the second input terminal 15 into AC power through the semiconductor element 21. The converted AC power is input from the output terminal 14 to a power supply target such as a motor.

[0074] like Figure 17 to Figure 19As shown, the substrate 11 is located on the side opposite to the plurality of semiconductor elements 21 in the first direction z, with the first conductive layer 121 and the second conductive layer 122 interposed therebetween. The substrate 11 supports the first conductive layer 121 and the second conductive layer 122. In the semiconductor device B, the substrate 11 is formed of a DBC (Direct Bonded Copper) substrate. Figure 17 to Figure 19 As shown, the base material 11 includes an insulating layer 111, an intermediate layer 112, and a heat dissipation layer 113. The base material 11 is covered with a sealing resin 50 except for a part of the heat dissipation layer 113.

[0075] like Figure 17 to Figure 19 As shown, the insulating layer 111 includes a portion between the intermediate layer 112 and the heat dissipation layer 113 in the first direction z. The insulating layer 111 is made of a material with relatively high thermal conductivity. The insulating layer 111 is made of, for example, ceramics containing aluminum nitride (AlN). The insulating layer 111 may also be made of an insulating resin sheet other than ceramics. The thickness of the insulating layer 111 is thinner than the thickness of each of the first conductive layer 121 and the second conductive layer 122.

[0076] like Figure 17 to Figure 19 As shown, the intermediate layer 112 is located between the insulating layer 111 and the first conductive layer 121 and the second conductive layer 122 in the first direction z. The intermediate layer 112 includes a pair of regions separated from each other in the second direction x. The composition of the intermediate layer 112 includes copper (Cu). Fig.13 As shown, when viewed in the first direction z, the intermediate layer 112 is surrounded by the periphery of the insulating layer 111 .

[0077] like Figure 17 to Figure 19 As shown, the heat dissipation layer 113 is located on the side opposite to the middle layer 112 with the insulating layer 111 in the first direction z. Fig.15 As shown, the heat dissipation layer 113 is exposed from the sealing resin 50. The heat dissipation layer 113 is composed of copper. The thickness of the heat dissipation layer 113 is thicker than the thickness of the insulating layer 111. When viewed in the first direction z, the heat dissipation layer 113 is surrounded by the periphery of the insulating layer 111.

[0078] like Figure 17 to Figure 19 As shown, the first conductive layer 121 and the second conductive layer 122 are bonded to the substrate 11. The first conductive layer 121 and the second conductive layer 122 are composed of copper. The first conductive layer 121 and the second conductive layer 122 are separated from each other in the second direction x. Fig.16 as well as Fig.17 As shown, the first conductive layer 121 has a first main surface 121A and a first back surface 121B facing opposite sides in the first direction z. The first main surface 121A faces the plurality of semiconductor elements 21. Fig.18As shown, the first back surface 121B is bonded to one of the pair of regions of the intermediate layer 112 via the first adhesive layer 123. The first adhesive layer 123 is, for example, a solder containing silver (Ag) in its composition. Fig.16 as well as Fig.17 As shown, the second conductive layer 122 has a second main surface 122A and a second back surface 122B facing opposite sides in the first direction z. The second main surface 122A faces the same side as the first main surface 121A in the first direction z. Fig.19 As shown, the second back surface 122B is bonded to the other of the pair of regions of the intermediate layer 112 via the first adhesive layer 123 .

[0079] like Fig.13 as well as Fig.17 As shown, a plurality of semiconductor elements 21 are respectively mounted on any one of the first conductive layer 121 and the second conductive layer 122. The semiconductor element 21 is, for example, a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor). In addition, the semiconductor element 21 may also be a switching element such as an IGBT (Insulated Gate Bipolar Transistor) or a diode. In the description of the semiconductor device B, the semiconductor element 21 is an n-channel type, and is targeted at a vertically structured MOSFET. The semiconductor element 21 includes a compound semiconductor substrate. The composition of the compound semiconductor substrate includes silicon carbide (SiC).

[0080] like Fig.13 As shown, in the semiconductor device B, the plurality of semiconductor elements 21 include a plurality of first elements 21A and a plurality of second elements 21B. The structure of each of the plurality of second elements 21B is the same as the structure of each of the plurality of first elements 21A. The plurality of first elements 21A are mounted on the first main surface 121A of the first conductive layer 121. The plurality of first elements 21A are arranged along the third direction y. The plurality of second elements 21B are mounted on the second main surface 122A of the second conductive layer 122. The plurality of second elements 21B are arranged along the third direction y.

[0081] like Fig.13 , Fig.18 as well as Fig.19 As shown, the plurality of semiconductor elements 21 include a first electrode 211 , a second electrode 212 , a third electrode 213 and a fourth electrode 214 .

[0082] like Fig.18 as well as Fig.19As shown, the first electrode 211 faces either the first conductive layer 121 or the second conductive layer 122. A current corresponding to the power before conversion by the semiconductor element 21 flows through the first electrode 211. That is, the first electrode 211 corresponds to the drain electrode of the semiconductor element 21.

[0083] like Fig.18 as well as Fig.19 As shown, the second electrode 212 is located on the opposite side of the first electrode 211 in the first direction z. A current corresponding to the power converted by the semiconductor element 21 flows through the second electrode 212. That is, the second electrode 212 corresponds to the source electrode of the semiconductor element 21.

[0084] like Fig.18 as well as Fig.19 As shown in FIG. 1 , the third electrode 213 is located on the same side as the second electrode 212 in the first direction z. A gate voltage for driving the semiconductor element 21 is applied to the third electrode 213. That is, the third electrode 213 is equivalent to the gate electrode of the semiconductor element 21. Fig.13 As shown, when viewed in the first direction z, the area of ​​the third electrode 213 is smaller than the area of ​​the second electrode 212 .

[0085] like Fig.13 As shown, the fourth electrode 214 is located on the same side as the second electrode 212 in the first direction z, and is located next to the third electrode 213 in the third direction y. The potential of the fourth electrode 214 is equal to that of the second electrode 212.

[0086] like Fig.18 as well as Fig.19 As shown, the conductive bonding layer 23 is between any one of the first conductive layer 121 and the second conductive layer 122 and the first electrode 211 of any one of the plurality of semiconductor elements 21. The conductive bonding layer 23 is, for example, solder. In addition, the conductive bonding layer 23 may also include a sintered body of metal particles. The first electrodes 211 of the plurality of first elements 21A are conductively bonded to the first main surface 121A of the first conductive layer 121 via the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of first elements 21A are conductively bonded to the first conductive layer 121. The first electrodes 211 of the plurality of second elements 21B are conductively bonded to the second main surface 122A of the second conductive layer 122 via the conductive bonding layer 23. Thus, the first electrodes 211 of the plurality of second elements 21B are conductively bonded to the second conductive layer 122.

[0087] like Fig.11 as well as Fig.17As shown, the first input terminal 13 is located on the side opposite to the second conductive layer 122 with the first conductive layer 121 in the middle in the second direction x, and is connected to the first conductive layer 121. Thus, the first input terminal 13 is electrically connected to the first electrodes 211 of the plurality of first elements 21A via the first conductive layer 121. The first input terminal 13 is a P terminal (positive electrode) to which a direct current power supply voltage that is the object of power conversion is applied. The first input terminal 13 extends from the first conductive layer 121 along the second direction x. The first input terminal 13 has a covering portion 13A and an exposed portion 13B. Fig.17 As shown, the covering portion 13A is connected to the first conductive layer 121 and is covered by the sealing resin 50. The covering portion 13A is flush with the first principal surface 121A of the first conductive layer 121. The exposed portion 13B extends from the covering portion 13A in the second direction x and is exposed from the sealing resin 50.

[0088] like Fig.11 as well as Fig.16 As shown, the output terminal 14 is located on the side opposite to the first conductive layer 121 with the second conductive layer 122 in the middle in the second direction x, and is connected to the second conductive layer 122. Thus, the output terminal 14 is electrically connected to the first electrodes 211 of the plurality of second elements 21B via the second conductive layer 122. The AC power converted by the semiconductor element 21 is output from the output terminal 14. In the semiconductor device B, the output terminal 14 includes a pair of regions separated from each other in the third direction y. In addition, the output terminal 14 may also be a single structure that does not include a pair of regions. The output terminal 14 has a covering portion 14A and an exposed portion 14B. As shown in FIG. Fig.16 As shown, the covering portion 14A is connected to the second conductive layer 122 and is covered by the sealing resin 50. The covering portion 14A is flush with the second main surface 122A of the second conductive layer 122. The exposed portion 14B extends from the covering portion 14A in the second direction x and is exposed from the sealing resin 50.

[0089] like Fig.11 as well as Fig.16 As shown, the second input terminal 15 is located on the same side as the first input terminal 13 relative to the first conductive layer 121 and the second conductive layer 122 in the second direction x, and is away from the first conductive layer 121 and the second conductive layer 122. The second input terminal 15 is electrically connected to the second electrodes 212 of the plurality of second elements 21B. The second input terminal 15 is an N terminal (negative electrode) to which a direct current power supply voltage that is the object of power conversion is applied. The second input terminal 15 includes a pair of regions separated from each other in the third direction y. The first input terminal 13 is located between the pair of regions in the third direction y. The second input terminal 15 has a covering portion 15A and an exposed portion 15B. As shown in FIG. Fig.16As shown, the covering portion 15A is separated from the first conductive layer 121 and is covered by the sealing resin 50 . The exposed portion 15B extends from the covering portion 15A in the second direction x and is exposed from the sealing resin 50 .

[0090] The pair of control wirings 60 constitute a part of the conductive path between the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the pair of fifth signal terminals 181, the pair of sixth signal terminals 182 and the plurality of semiconductor elements 21. Figure 11 to Figure 13 As shown, a pair of control wirings 60 includes a first wiring 601 and a second wiring 602. In the second direction x, the first wiring 601 is located between the plurality of first elements 21A and the first input terminal 13 and the second input terminal 15. The first wiring 601 is bonded to the first main surface 121A of the first conductive layer 121. The first wiring 601 also constitutes a part of the conductive path between the seventh signal terminal 19 and the first conductive layer 121. In the second direction x, the second wiring 602 is located between the plurality of second elements 21B and the output terminal 14. The second wiring 602 is bonded to the second main surface 122A of the second conductive layer 122. Fig.18 as well as Fig.19 As shown, the pair of control wirings 60 includes an insulating layer 61, a plurality of wiring layers 62, a metal layer 63, and a plurality of sleeves 64. The pair of control wirings 60 are covered with a sealing resin 50 except for a portion of each of the plurality of sleeves 64.

[0091] like Fig.18 as well as Fig.19 As shown, the insulating layer 61 includes a portion interposed between the plurality of wiring layers 62 and the metal layer 63 in the first direction z. The insulating layer 61 is made of, for example, ceramic. The insulating layer 61 may be made of an insulating resin sheet other than ceramic.

[0092] like Fig.18 as well as Fig.19 As shown in FIG. 1 , the plurality of wiring layers 62 are located on one side of the first direction z of the insulating layer 61. The composition of the plurality of wiring layers 62 includes copper. Fig.13 As shown, the plurality of wiring layers 62 include a first wiring layer 621, a second wiring layer 622, a pair of third wiring layers 623, a fourth wiring layer 624, and a fifth wiring layer 625. The pair of third wiring layers 623 are adjacent to each other in the third direction y.

[0093] like Fig.18 as well as Fig.19As shown, the metal layer 63 is located on the side opposite to the plurality of wiring layers 62 with the insulating layer 61 in the middle in the first direction z. The composition of the metal layer 63 includes copper. The metal layer 63 of the first wiring 601 is bonded to the first main surface 121A of the first conductive layer 121 through the second adhesive layer 68. The metal layer 63 of the second wiring 602 is bonded to the second main surface 122A of the second conductive layer 122 through the second adhesive layer 68. The second adhesive layer 68 is composed of a material whether or not it has conductivity. The second adhesive layer 68 is, for example, solder.

[0094] like Fig.18 as well as Fig.19 As shown, the plurality of sleeves 64 are respectively bonded to any one of the plurality of wiring layers 62 through the third adhesive layer 69. The plurality of sleeves 64 are made of conductive materials such as metal. The plurality of sleeves 64 are respectively cylindrical and extend along the first direction z. One end of the plurality of sleeves 64 is conductively bonded to any one of the plurality of wiring layers 62. Fig.10 as well as Fig.17 As shown, end surfaces 641 corresponding to the other ends of the plurality of sleeves 64 are exposed from a top surface 51 of a sealing resin 50 described later. The third adhesive layer 69 has conductivity. The third adhesive layer 69 is, for example, solder.

[0095] like Fig.12 As shown, one of the pair of thermistors 22 is conductively bonded to a pair of third wiring layers 623 of the first wiring 601. Fig.12 As shown, the other thermistor 22 of the pair of thermistors 22 is conductively bonded to the pair of third wiring layers 623 of the second wiring 602. The pair of thermistors 22 is, for example, an NTC (Negative Temperature Coefficient) thermistor. NTC thermistors have the characteristic that their resistance decreases slowly with increasing temperature. The pair of thermistors 22 is used as a temperature detection sensor for the semiconductor device B.

[0096] like Fig. 9 As shown in the figure, the first signal terminal 161, the second signal terminal 162, the third signal terminal 171, the fourth signal terminal 172, the pair of fifth signal terminals 181, the pair of sixth signal terminals 182, and the seventh signal terminal 19 are composed of metal pins extending in the first direction z. These terminals protrude from the top surface 51 of the sealing resin 50 described later. And these terminals are individually pressed into the plurality of sleeves 64 of the pair of control wirings 60. Thus, these terminals are respectively supported by any one of the plurality of sleeves 64, and are conductively connected to any one of the plurality of wiring layers 62.

[0097] like Fig.13 as well as Fig.18As shown, the first signal terminal 161 is pressed into the sleeve 64 that is joined to the first wiring layer 621 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the first signal terminal 161 is supported by the sleeve 64 and is electrically connected to the first wiring layer 621 of the first wiring 601. Furthermore, the first signal terminal 161 is electrically connected to the third electrode 213 of the plurality of first elements 21A. A gate voltage for driving the plurality of first elements 21A is applied to the first signal terminal 161.

[0098] like Fig.13 as well as Fig.19 As shown, the second signal terminal 162 is pressed into the sleeve 64 of the pair of sleeves 64 of the control wiring 60 and is connected to the first wiring layer 621 of the second wiring 602. As a result, the second signal terminal 162 is supported by the sleeve 64 and is electrically connected to the first wiring layer 621 of the second wiring 602. In addition, the second signal terminal 162 is electrically connected to the third electrode 213 of the plurality of second elements 21B. A gate voltage for driving the plurality of second elements 21B is applied to the second signal terminal 162.

[0099] like Fig.10 As shown in FIG. 1 , the third signal terminal 171 is located next to the first signal terminal 161 in the third direction y. Fig.13 As shown, the third signal terminal 171 is pressed into the sleeve 64 that is joined to the second wiring layer 622 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the third signal terminal 171 is supported by the sleeve 64 and is electrically connected to the second wiring layer 622 of the first wiring 601. Furthermore, the third signal terminal 171 is electrically connected to the fourth electrodes 214 of the plurality of first elements 21A. A voltage corresponding to the largest current among the currents flowing through the fourth electrodes 214 of the plurality of first elements 21A is applied to the third signal terminal 171.

[0100] like Fig.10 As shown in FIG. 1 , the fourth signal terminal 172 is located next to the second signal terminal 162 in the third direction y. Fig.13 As shown, the fourth signal terminal 172 is pressed into the sleeve 64 that is joined to the second wiring layer 622 of the second wiring 602 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the fourth signal terminal 172 is supported by the sleeve 64 and is electrically connected to the second wiring layer 622 of the second wiring 602. In addition, the fourth signal terminal 172 is electrically connected to the fourth electrodes 214 of the plurality of second elements 21B. A voltage corresponding to the largest current among the currents flowing through the fourth electrodes 214 of the plurality of second elements 21B is applied to the fourth signal terminal 172.

[0101] like Fig.10As shown, the pair of fifth signal terminals 181 are located on the side opposite to the third signal terminal 171 with the first signal terminal 161 in the middle in the third direction y. The pair of fifth signal terminals 181 are adjacent to each other in the third direction y. Fig.13 As shown, the pair of fifth signal terminals 181 are respectively pressed into a pair of sleeves 64 of a pair of control wirings 60 that are bonded to a pair of third wiring layers 623 of the first wiring 601. Thus, the pair of fifth signal terminals 181 are supported by the pair of sleeves 64 and are electrically connected to the pair of third wiring layers 623 of the first wiring 601. Furthermore, the pair of fifth signal terminals 181 are electrically connected to the thermistors 22 of the pair of thermistors 22 that are electrically connected to the pair of third wiring layers 623 of the first wiring 601.

[0102] like Fig.10 As shown, the pair of sixth signal terminals 182 are located on the side opposite to the fourth signal terminal 172 with the second signal terminal 162 in the middle in the third direction y. The pair of sixth signal terminals 182 are adjacent to each other in the third direction y. Fig.13 As shown, the pair of sixth signal terminals 182 are respectively pressed into a pair of sleeves 64 of a pair of control wirings 60 that are bonded to a pair of third wiring layers 623 of the second wiring 602. Thus, the pair of sixth signal terminals 182 are supported by the pair of sleeves 64 and are electrically connected to the pair of third wiring layers 623 of the second wiring 602. Furthermore, the pair of sixth signal terminals 182 are electrically connected to the thermistors 22 of the pair of thermistors 22 that are electrically connected to the pair of third wiring layers 623 of the second wiring 602.

[0103] like Fig.10 As shown, the seventh signal terminal 19 is located on the side opposite to the first signal terminal 161 with the third signal terminal 171 in the middle in the third direction y. Fig.13 As shown, the seventh signal terminal 19 is pressed into the sleeve 64 that is joined to the fifth wiring layer 625 of the first wiring 601 among the plurality of sleeves 64 of the pair of control wirings 60. Thus, the seventh signal terminal 19 is supported by the sleeve 64 and is electrically connected to the fifth wiring layer 625 of the first wiring 601. Furthermore, the seventh signal terminal 19 is electrically connected to the first conductive layer 121. A voltage equivalent to the DC power input to the first input terminal 13 and the second input terminal 15 is applied to the seventh signal terminal 19.

[0104] like Fig.13 As shown, the plurality of first wires 41 are conductively bonded to the third electrodes 213 of the plurality of first elements 21A and the fourth wiring layer 624 of the first wiring 601. Fig.13As shown, the plurality of third wires 43 are conductively bonded to the fourth wiring layer 624 of the first wiring 601 and the first wiring layer 621 of the first wiring 601. Thus, the first signal terminal 161 is electrically connected to the third electrodes 213 of the plurality of first elements 21A. The composition of the plurality of first wires 41 and the plurality of third wires 43 includes gold (Au). In addition, the composition of the plurality of first wires 41 and the plurality of third wires 43 may also include copper or aluminum.

[0105] And, if Fig.13 As shown, the plurality of first wires 41 are conductively bonded to the third electrodes 213 of the plurality of second elements 21B and the fourth wiring layer 624 of the second wiring 602. Fig.13 As shown, the plurality of third wires 43 are conductively bonded to the fourth wiring layer 624 of the second wiring 602 and the first wiring layer 621 of the second wiring 602. Thus, the second signal terminal 162 is electrically connected to the third electrodes 213 of the plurality of second elements 21B.

[0106] like Fig.13 As shown, the plurality of second wires 42 are conductively bonded to the fourth electrodes 214 of the plurality of first elements 21A and the second wiring layer 622 of the first wiring 601. Thus, the third signal terminal 171 is conductively connected to the fourth electrodes 214 of the plurality of first elements 21A. Fig.13 As shown, the plurality of second wires 42 are conductively bonded to the fourth electrodes 214 of the plurality of second elements 21B and the second wiring layer 622 of the second wiring 602. Thus, the fourth signal terminal 172 is electrically connected to the fourth electrodes 214 of the plurality of second elements 21B. The composition of the plurality of second wires 42 includes gold. In addition, the composition of the plurality of second wires 42 may also include copper or aluminum.

[0107] like Fig.13 As shown, the fourth wire 44 is conductively bonded to the fifth wiring layer 625 of the first wiring 601 and the first main surface 121A of the first conductive layer 121. Thus, the seventh signal terminal 19 is conductively connected to the first conductive layer 121. The fourth wire 44 is composed of gold. In addition, the fourth wire 44 may also be composed of copper or aluminum.

[0108] like Fig.13 as well as Fig.18 As shown, the first conductive component 31 is conductively bonded to the second electrodes 212 of the plurality of first elements 21A and the second main surface 122A of the second conductive layer 122. Thus, the second electrodes 212 of the plurality of first elements 21A are conductively bonded to the second conductive layer 122. The first conductive component 31 is composed of copper. The first conductive component 31 is a metal clip. Fig.13As shown, the first conductive component 31 includes a main body portion 311 , a plurality of first bonding portions 312 , a plurality of first connecting portions 313 , a second bonding portion 314 , and a second connecting portion 315 .

[0109] The main body 311 constitutes a main part of the first conductive component 31. Fig.13 As shown, the main body 311 extends in the third direction y. Fig.17 As shown, the main body 311 spans between the first conductive layer 121 and the second conductive layer 122 .

[0110] like Fig.18 As shown, the plurality of first bonding portions 312 are bonded to the second electrodes 212 of the plurality of first elements 21A, respectively. The plurality of first bonding portions 312 are opposed to the second electrode 212 of any one of the plurality of first elements 21A, respectively.

[0111] like Fig.13 As shown, the plurality of first connecting parts 313 are connected to the main body 311 and the plurality of first bonding parts 312. The plurality of first connecting parts 313 are separated from each other in the third direction y. Fig.17 As shown, when viewed in the third direction y, the first connecting portions 313 are inclined toward a direction away from the first main surface 121A of the first conductive layer 121 as they move from the first bonding portions 312 toward the main body portion 311 .

[0112] like Fig.13 as well as Fig.17 As shown, the second bonding portion 314 is bonded to the second main surface 122A of the second conductive layer 122. The second bonding portion 314 is opposite to the second main surface 122A. The second bonding portion 314 extends in the third direction y. The dimension of the second bonding portion 314 in the third direction y is equal to the dimension of the main body 311 in the third direction y.

[0113] like Fig.13 as well as Fig.17 As shown, the second connecting portion 315 is connected to the main body 311 and the second bonding portion 314. When viewed in the third direction y, the second connecting portion 315 is inclined in a direction away from the second main surface 122A of the second conductive layer 122 as it moves from the second bonding portion 314 toward the main body 311. The dimension of the second connecting portion 315 in the third direction y is equal to the dimension of the main body 311 in the third direction y.

[0114] like Fig.17 , Fig.18 as well as Fig.21As shown, the semiconductor device B further includes a first conductive bonding layer 33. The first conductive bonding layer 33 is interposed between the second electrodes 212 of the plurality of first elements 21A and the plurality of first bonding portions 312. The first conductive bonding layer 33 conductively bonds the second electrodes 212 of the plurality of first elements 21A to the plurality of first bonding portions 312. The first conductive bonding layer 33 is, for example, solder. In addition, the first conductive bonding layer 33 may also include a sintered body of metal particles.

[0115] like Fig.17 As shown, the semiconductor device B further includes a second conductive bonding layer 34. The second conductive bonding layer 34 is interposed between the second main surface 122A of the second conductive layer 122 and the second bonding portion 314. The second conductive bonding layer 34 conductively bonds the second main surface 122A to the second bonding portion 314. The second conductive bonding layer 34 is, for example, solder. In addition, the second conductive bonding layer 34 may also include a sintered body of metal particles.

[0116] like Fig.12 as well as Fig.19 As shown, the second conductive component 32 is conductively bonded to the second electrodes 212 of the second elements 21B and the covering portion 15A of the second input terminal 15. Thus, the second electrodes 212 of the second elements 21B are conductively bonded to the second input terminal 15. The second conductive component 32 is composed of copper. The second conductive component 32 is a metal clip. Fig.12 As shown, the second conductive component 32 has a pair of main body parts 321 , a plurality of third bonding parts 322 , a plurality of third connecting parts 323 , a pair of fourth bonding parts 324 , a pair of fourth connecting parts 325 , a plurality of intermediate parts 326 , and a plurality of beam parts 327 .

[0117] like Fig.12 As shown, the pair of main body portions 321 are separated from each other in the third direction y. The pair of main body portions 321 extend in the second direction x. Fig.16 As shown, the pair of body portions 321 are arranged parallel to the first principal surface 121A of the first conductive layer 121 and the second principal surface 122A of the second conductive layer 122. The pair of body portions 321 are farther from the first principal surface 121A and the second principal surface 122A than the body portion 311 of the first conductive member 31.

[0118] like Fig.12 As shown, the plurality of intermediate portions 326 are separated from each other in the third direction y and are located between the pair of main body portions 321 in the third direction y. The plurality of intermediate portions 326 extend in the second direction x. The size of each of the plurality of intermediate portions 326 in the second direction x is smaller than the size of each of the pair of main body portions 321 in the second direction x.

[0119] like Fig.19As shown, the plurality of third bonding portions 322 are bonded to the second electrodes 212 of the plurality of second elements 21B, respectively. The plurality of third bonding portions 322 are opposed to the second electrode 212 of any one of the plurality of second elements 21B, respectively.

[0120] like Fig.12 as well as Fig. 20 As shown, the plurality of third connecting portions 323 are connected to both sides of the third direction y of the plurality of third bonding portions 322. In addition, the plurality of third connecting portions 323 are connected to any one of the pair of main body portions 321 and the plurality of intermediate portions 326. When viewed in the second direction x, the plurality of third connecting portions 323 are inclined in a direction away from the second main surface 122A of the second conductive layer 122 as they move from any one of the plurality of third bonding portions 322 toward any one of the pair of main body portions 321 and the plurality of intermediate portions 326.

[0121] like Fig.12 as well as Fig.16 As shown, the pair of fourth engagement portions 324 is engaged with the covering portion 15A of the second input terminal 15. The pair of fourth engagement portions 324 is opposed to the covering portion 15A.

[0122] like Fig.12 as well as Fig.16 As shown, the pair of fourth connecting portions 325 are connected to the pair of main body portions 321 and the pair of fourth bonding portions 324. When viewed in the third direction y, the pair of fourth connecting portions 325 are inclined away from the first main surface 121A of the first conductive layer 121 as they move from the pair of fourth bonding portions 324 toward the pair of main body portions 321.

[0123] like Fig.12 as well as Fig.21 As shown, the plurality of beam portions 327 are arranged along the third direction y. When viewed in the first direction z, the plurality of beam portions 327 include regions that overlap with the plurality of first bonding portions 312 of the first conductive component 31. The beam portion 327 located in the center of the plurality of beam portions 327 in the third direction y is connected to the plurality of intermediate portions 326 on both sides in the third direction y. The remaining two beam portions 327 in the plurality of beam portions 327 are connected to any one of the pair of main body portions 321 and any one of the plurality of intermediate portions 326 on both sides in the third direction y. When viewed in the second direction x, the plurality of beam portions 327 are convex in the first direction z on the side toward which the first main surface 121A of the first conductive layer 121 faces.

[0124] like Fig.17 , Fig.19 as well as Fig. 20As shown, the semiconductor device B further includes a third conductive bonding layer 35. The third conductive bonding layer 35 is interposed between the second electrodes 212 of the plurality of second elements 21B and the plurality of third bonding portions 322. The third conductive bonding layer 35 conductively bonds the second electrodes 212 of the plurality of second elements 21B to the plurality of third bonding portions 322. The third conductive bonding layer 35 is, for example, solder. In addition, the third conductive bonding layer 35 may also include a sintered body of metal particles.

[0125] like Fig.16 As shown, the semiconductor device B further includes a fourth conductive bonding layer 36. The fourth conductive bonding layer 36 is interposed between the covering portion 15A of the second input terminal 15 and the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 conductively bonds the covering portion 15A to the pair of fourth bonding portions 324. The fourth conductive bonding layer 36 is, for example, solder. In addition, the fourth conductive bonding layer 36 may also include a sintered body of metal particles.

[0126] like Fig.16 , Fig.17 , Fig. 20 as well as Fig.21 As shown, the sealing resin 50 covers the first conductive layer 121, the second conductive layer 122, the plurality of semiconductor elements 21, the first conductive component 31, and the second conductive component 32. In addition, the sealing resin 50 covers a portion of the substrate 11, the first input terminal 13, the output terminal 14, and the second input terminal 15. The sealing resin 50 has electrical insulation properties. The sealing resin 50 is made of a material including a black epoxy resin, for example. Fig.10 ,as well as Figure 14 to Figure 17 As shown, the sealing resin 50 has a top surface 51 , a bottom surface 52 , a pair of first side surfaces 53 , a pair of second side surfaces 54 , and a pair of recessed portions 55 .

[0127] like Fig.16 as well as Fig.17 As shown, the top surface 51 faces the same side as the first main surface 121A of the first conductive layer 121 in the first direction z. Fig.16 as well as Fig.17 As shown, the bottom surface 52 faces the side opposite to the top surface 51 in the first direction z. Fig.15 As shown, the heat dissipation layer 113 of the substrate 11 is exposed from the bottom surface 52 .

[0128] like Fig.10 as well as Fig.14As shown, the pair of first side surfaces 53 are separated from each other in the second direction x. The pair of first side surfaces 53 face the second direction x and extend in the third direction y. The pair of first side surfaces 53 are connected to the top surface 51. The exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 are exposed from the first side surface 53 of one of the pair of first side surfaces 53. The exposed portion 14B of the output terminal 14 is exposed from the first side surface 53 of the other of the pair of first side surfaces 53.

[0129] like Fig.10 as well as Fig.15 As shown, the pair of second side surfaces 54 are separated from each other in the third direction y. The pair of second side surfaces 54 face opposite sides in the third direction y and extend in the second direction x. The pair of second side surfaces 54 are connected to the top surface 51 and the bottom surface 52.

[0130] like Fig.10 as well as Fig.15 As shown, a pair of recesses 55 are recessed from the first side surface 53 where the exposed portion 13B of the first input terminal 13 and the exposed portion 15B of the second input terminal 15 are exposed in the pair of first side surfaces 53 toward the second direction x. The pair of recesses 55 extend from the top surface 51 to the bottom surface 52 in the first direction z. The pair of recesses 55 are located on both sides of the first input terminal 13 in the third direction y.

[0131] First embodiment (Cooling structure of semiconductor device):

[0132] Next, based on Fig. 22 as well as Fig.23 , a cooling structure C10 (hereinafter referred to as "cooling structure C10") according to a first embodiment of the present disclosure is described. The cooling structure C10 includes a cooler A10, a semiconductor device B, and a mounting component 88. The cooling structure C10, for example, constitutes a part of an inverter device for driving a three-phase AC motor. Fig. 22 In the figure, the XXIII-XXIII line is represented by a dash-dotted line.

[0133] In the cooling structure C10, if Fig. 22 as well as Fig.23 As shown in FIG. 1 , the semiconductor device B is mounted on the main surface 71A of the housing 70 of the cooler A10. The semiconductor device B blocks the opening 711 of the housing 70. More specifically, as shown in FIG. Fig.23 As shown, the heat dissipation layer 113 of the substrate 11 of the semiconductor device B closes the opening 711. The bottom surface 52 of the sealing resin 50 of the semiconductor device B is in contact with the main surface 71A.

[0134] like Fig. 22 as well as Fig.23As shown, the mounting component 88 holds the semiconductor device B in the housing 70 of the cooler A10. The mounting component 88 is made of a material containing metal. The mounting component 88 is in contact with the top surface 51 of the sealing resin 50 of the semiconductor device B and spans the top surface 51. The mounting component 88 is, for example, a leaf spring. The mounting component 88 is located between the first signal terminal 161 and the second signal terminal 162 of any one of the semiconductor devices B in the second direction x. The mounting component 88 is mounted on the housing 70 on both sides in the third direction y by connecting components 89. The connecting component 89 is, for example, a bolt.

[0135] Next, the effects of the cooler A10 and the cooling structure C10 will be described.

[0136] The cooler A10 includes a housing 70 and a partition wall 81. The housing 70 includes an opening 711 located on one side in the first direction z, an inner hollow portion 73 connected to the opening 711, and a bottom portion 72 located on the opposite side of the opening 711 with respect to the inner hollow portion 73. The inner hollow portion 73 includes a first storage portion 731 and a second storage portion 732 divided by the partition wall 81. The partition wall 81 includes an overflow portion 811 that overlaps with the opening 711 when viewed in the first direction z and is farthest from the bottom portion 72 of the housing 70. The overflow portion 811 is located between the bottom portion 72 and the opening 711.

[0137] By adopting this structure, if the refrigerant continues to flow into the first storage part 731 through the inlet passage 74, the liquid level of the refrigerant rises toward the overflow part 811. Then, if the liquid level rises further than the overflow part 811, the refrigerant flows over the overflow part 811 to the second storage part 732. Thus, the interference of the inner hollow part 73 with the flow direction of the refrigerant is suppressed. In addition, since the position head of the refrigerant increases from the inlet passage 74 to the overflow part 811, the reduction in the overall amount of energy of the flow of the refrigerant in the first storage part 731 is suppressed. Thus, in the cooler A10, the refrigerant easily spreads throughout the entire cooling object.

[0138] In the cooling structure C10, the semiconductor device B blocks the opening 711. In the cooler A10, the overflow portion 811 is away from the opening 711 in the first direction z. By adopting this structure, in the cooling structure C10, a gap is set between the overflow portion 811 and the semiconductor device B in the first direction z. As a result, the refrigerant flows down into the gap, so the refrigerant can pass over the overflow portion 811 (see Fig.23). In the cooling structure C10, the refrigerant flowing down the gap contacts the semiconductor device B, thereby cooling the semiconductor device B. The direction of the flow of the refrigerant contacting the semiconductor device B is a direction orthogonal to the first direction z. Therefore, in the cooling structure C10, it is difficult for the semiconductor device B to interfere with the flow of the refrigerant. Therefore, according to the above structure, in the cooler A10 and the cooling structure C10, the energy loss of the flow of the refrigerant can be suppressed, and the cooling efficiency can be improved.

[0139] The partition wall 81 includes a first partition wall 81A and a second partition wall 81B, which overlap with the opening 711 of the box body 70 when viewed in the first direction z, and are separated from each other in the second direction x. The first storage portion 731 is located between the first partition wall 81A and the second partition wall 81B. When viewed in the first direction z, the first storage portion 731 overlaps with the center C of the opening 711. By adopting this structure, the direction of the flow of the refrigerant that crosses the overflow portion 811 of the partition wall 81 is from the center C toward both sides of the second direction x. As a result, the deviation of the flow of the refrigerant in contact with the semiconductor device B can be reduced.

[0140] In the above case, the first partition wall 81A and the second partition wall 81B extend in the third direction y. By adopting this structure, when cooling the semiconductor device B having the cooling structure C10 with a plurality of semiconductor elements 21 arranged in the third direction y, the deviation of the heat distribution in the semiconductor device B caused by the plurality of semiconductor elements 21 can be reduced.

[0141] The inflow path 74 and the outflow path 75 are provided at the bottom 72. The inflow path 74 and the outflow path 75 respectively penetrate the bottom 72 in the first direction z. By adopting this structure, it is possible to suppress the expansion of the dimension of the cooler A10 in the direction orthogonal to the first direction z, and increase the position head of the refrigerant flowing into the first storage part 731. Thus, the reduction in the overall amount of energy of the flow of the refrigerant in the first storage part 731 is further suppressed.

[0142] The main body 71 and the partition wall 81 of the box body 70 are made of a material containing resin. The partition wall 81 is integrated with the main body 71. By adopting this structure, the cooler A10 can be made lighter and the rigidity of the cooler A10 can be improved.

[0143] Second embodiment (cooler):

[0144] based on Figure 24 to Figure 28 A cooler A20 according to a second embodiment of the present disclosure will be described. In these drawings, the same reference numerals are given to the same or similar elements as those of the cooler A10 described above, and duplicate descriptions are omitted.

[0145] The cooler A20 is different from the cooler A10 in that a cover member 82 is further provided.

[0146] like Figure 24 to Figure 27 As shown, the cover member 82 blocks the opening 711 of the box body 70. A plurality of mounting holes 712 are provided in the main body 71 of the box body 70, which are recessed from the main surface 71A. A plurality of through holes 824 are provided in the cover member 82, which penetrate the cover member 82 in the first direction z. When viewed in the first direction z, the plurality of through holes 824 overlap with the plurality of mounting holes 712, respectively. The cover member 82 is mounted on the main body 71 by inserting a connecting member 825 through each of the plurality of through holes 824 and each of the plurality of mounting holes 712. The connecting member 825 is, for example, a bolt. The cover member 82 is made of a material containing metal. The thermal conductivity of the cover member 82 is higher than the thermal conductivity of each of the main body 71 and the partition wall 81.

[0147] like Fig.26 as well as Fig. 27 As shown, the cover member 82 has a base surface 821 facing the opening portion 711 of the housing 70. The base surface 821 is separated from the overflow portion 811 of the partition wall 81. Therefore, a gap is provided between the overflow portion 811 and the base surface 821 in the cooler A20.

[0148] like Figure 26 to Figure 28 As shown, the cover member 82 is provided with a recessed portion 822 that is recessed in the first direction z. The recessed portion 822 includes a portion defined by the base surface 821. Therefore, the recessed portion 822 faces the opening 711 of the box body 70.

[0149] like Figure 26 to Figure 28 As shown, the cover member 82 has a heat dissipation portion 823 protruding from the base surface 821. The heat dissipation portion 823 is accommodated in the recessed portion 822. In the cooler A20, the heat dissipation portion 823 is away from the overflow portion 811 of the partition wall 81.

[0150] like Fig.28 As shown, the heat dissipation portion 823 includes a plurality of fins extending in the second direction x, respectively. The plurality of fins are arranged along the third direction y. Therefore, when viewed in the first direction z, the plurality of fins are orthogonal to each of the first partition wall 81A and the second partition wall 81B of the partition wall 81, respectively. In addition, the heat dissipation portion 823 may also include a plurality of pins separated from each other in a direction orthogonal to the first direction z.

[0151] Second embodiment (Cooling structure of semiconductor device):

[0152] Next, based on Fig.29 as well as Fig.30, a cooling structure C20 (hereinafter referred to as "cooling structure C20") according to a second embodiment of the present disclosure is described. In these figures, the same or similar elements as those of the cooling structure C10 described above are marked with the same symbols, and repeated descriptions are omitted. Fig.29 In the figure, the XXX-XXX line is represented by a dotted line.

[0153] The cooling structure C20 includes a cooler A20, a semiconductor device B, and a mounting member 88. In the cooling structure C20, Fig.29 as well as Fig.30 As shown, the semiconductor device B is mounted on the cover member 82 of the cooler A20. The heat dissipation layer 113 of the substrate 11 of the semiconductor device B and the bottom surface 52 of the sealing resin 50 of the semiconductor device B are in contact with the cover member 82. When viewed in the first direction z, the substrate 11 of the semiconductor device B overlaps with the opening 711 of the case 70.

[0154] like Fig.29 As shown, the mounting member 88 is mounted to the cover member 82 via connecting members 89 on both sides in the third direction y.

[0155] Next, the effects of the cooler A20 and the cooling structure C20 will be described.

[0156] The cooler A20 includes a housing 70 and a partition wall 81. The housing 70 includes an opening portion 711 located on one side of the first direction z, an inner hollow portion 73 connected to the opening portion 711, and a bottom portion 72 located on the opposite side of the opening portion 711 with respect to the inner hollow portion 73. The inner hollow portion 73 includes a first storage portion 731 and a second storage portion 732 divided by the partition wall 81. The partition wall 81 includes an overflow portion 811 which overlaps with the opening portion 711 when viewed in the first direction z and is farthest from the bottom 72 of the housing 70. The overflow portion 811 is located between the bottom portion 72 and the opening portion 711. By adopting this structure, even in the cooler A20, the energy loss of the flow of the refrigerant is suppressed, so that the refrigerant can easily spread throughout the entire cooling object.

[0157] The cooler A20 further includes a cover member 82, which has a base surface 821 opposite to the opening 711 and blocks the opening 711. The overflow portion 811 is away from the base surface 821. By adopting this structure, in the cooler A20, a gap is set between the overflow portion 811 and the base surface 821. As a result, the refrigerant flows down in the gap, so that the refrigerant can pass over the overflow portion 811 (see Fig.30). Furthermore, in the cooling structure C20, the semiconductor device B is mounted on the cover member 82. When viewed in the first direction z, the semiconductor device B overlaps with the opening 711. By adopting this structure, in the cooling structure C20, the refrigerant contacts the cover member 82, thereby cooling the semiconductor device B via the cover member 82. Therefore, the semiconductor device B does not contact the refrigerant, and therefore, in the cooling structure C20, the semiconductor device B does not interfere with the flow of the refrigerant. Therefore, according to the above structure, even in the cooler A20 and the cooling structure C20, the energy loss of the flow of the refrigerant can be suppressed, and the cooling efficiency can be improved.

[0158] In the cooler A20, a recessed portion 822 is provided on the cover member 82, and the recessed portion 822 is recessed in the first direction z and includes a portion defined by the base surface 821. The cover member 82 has a heat dissipation portion 823 protruding from the base surface 821. The heat dissipation portion 823 is accommodated in the recessed portion 822. By adopting this structure, a gap between the overflow portion 811 of the partition wall 81 and the base surface 821 required for the refrigerant to flow down can be ensured, and by the refrigerant contacting the heat dissipation portion 823, the cooling efficiency of the cooler A20 can be effectively improved.

[0159] The heat dissipation portion 823 of the cover member 82 includes a plurality of fins extending in the second direction x, respectively. The plurality of fins are arranged along the third direction y. By adopting this structure, when the refrigerant passes over the overflow portion 811 of the partition wall 81, the heat dissipation portion 823 is prevented from interfering with the flow direction of the refrigerant. In addition, the contact area of ​​the refrigerant with respect to the heat dissipation portion 823 is increased, thereby further improving the cooling efficiency of the cooler A20.

[0160] The cooler A30 has the same structure as the cooler A10, and can thereby achieve the same operational effects as those of the cooler A10.

[0161] Third embodiment (cooler):

[0162] based on Figure 31 to Figure 33 , a cooler A30 according to a third embodiment of the present disclosure is described. In these figures, the same reference numerals are used for the same or similar elements as those of the above-mentioned coolers A10 and A20, and repeated descriptions are omitted. Fig.31 In the figure, the cover member 82 is shown for easy understanding. Fig.31 In FIG. 8 , the transparent cover member 82 is indicated by an imaginary line.

[0163] In the cooler A30, the structures of the partition wall 81 and the main body portion 71 of the box body 70 are different from those of the cooler A20.

[0164] like Fig.32 as well as Fig.33As shown, in the first direction z, the position of the overflow portion 811 of the partition wall 81 is equal to the position of the opening 711 of the housing 70. Therefore, the overflow portion 811 and the main surface 71A of the housing 70 are aligned with each other.

[0165] like Figure 31 to Figure 33 As shown, a groove 713 recessed from the main surface 71A is provided in the main body 71 of the housing 70. The groove 713 constitutes a part of the opening 711 of the housing 70. The part of the partition wall 81 exposed from the opening 711 is surrounded by the groove 713.

[0166] like Fig.32 as well as Fig.33 As shown, the heat dissipation portion 823 of the cover member 82 is in contact with the overflow portion 811 of the partition wall 81. However, the base surface 821 of the cover member 82 is away from the overflow portion 811. Therefore, a gap is provided between the overflow portion 811 and the base surface 821 even in the cooler A30.

[0167] Next, the effects of the cooler A30 will be described.

[0168] The cooler A30 includes a housing 70 and a partition wall 81. The housing 70 includes an opening portion 711 located on one side of the first direction z, an inner hollow portion 73 connected to the opening portion 711, and a bottom portion 72 located on the opposite side of the opening portion 711 with respect to the inner hollow portion 73. The inner hollow portion 73 includes a first storage portion 731 and a second storage portion 732 divided by the partition wall 81. The partition wall 81 includes an overflow portion 811 which overlaps with the opening portion 711 when viewed in the first direction z and is farthest from the bottom 72 of the housing 70. The overflow portion 811 is located between the bottom portion 72 and the opening portion 711. By adopting this structure, even in the cooler A30, the energy loss of the flow of the refrigerant is suppressed, so that the refrigerant can easily spread throughout the entire cooling object.

[0169] The cooler A30 also includes a cover member 82, which has a base surface 821 opposite to the opening portion 711 and blocks the opening portion 711. The overflow portion 811 is away from the base surface 821. By adopting this structure, even in the cooler A30, a gap is set between the overflow portion 811 and the base surface 821. As a result, the refrigerant flows down in the gap, so the refrigerant can contact the cover member 82 and pass over the overflow portion 811. Therefore, according to the above structure, even in the cooler A30, the energy loss of the flow of the refrigerant can be suppressed, and the cooling efficiency can be improved.

[0170] In cooler A30, heat dissipation portion 823 of cover member 82 is in contact with overflow portion 811 of partition wall 81. With this structure, refrigerant that has passed overflow portion 811 can contact heat dissipation portion 823 over a wider range. Therefore, the cooling efficiency of cooler A30 can be further improved.

[0171] The cooler A30 has the same structure as the cooler A10, and thus has the same function and effect as the cooler A10. In addition, the cooling structure C20 described above includes the cooler A30 instead of the cooler A20.

[0172] Fourth embodiment (cooler):

[0173] based on Figure 34 to Figure 37 , a cooler A40 according to a fourth embodiment of the present disclosure will be described. In these drawings, the same reference numerals are given to the same or similar elements as those of the cooler A10 described above, and duplicate descriptions are omitted.

[0174] In the cooler A40, the structures of the partition wall 81 and the inner hollow portion 73 of the box body 70 are different from those of the cooler A10.

[0175] like Fig.34 as well as Fig.35 As shown, the partition wall 81 includes an annular portion 812 and a covering portion 813 instead of the first partition wall 81A, the second partition wall 81B, the third partition wall 81C, the fourth partition wall 81D, and the fifth partition wall 81E. When viewed in the first direction z, the annular portion 812 surrounds the center C of the opening portion 711 of the box body 70. In the cooler A40, the annular portion 812 includes the overflow portion 811.

[0176] like Fig.34 as well as Fig.35 As shown, the cover portion 813 connects the annular portion 812 and the main body 71 of the box body 70. Figure 35 to Figure 37 As shown, the covering portion 813 is away from the overflow portion 811 in the first direction z.

[0177] like Fig.34 As shown, when viewed in the first direction z, the second storage portion 732 surrounds the first storage portion 731. When viewed in the first direction z, the second storage portion 732 overlaps the cover portion 813. A portion of the first storage portion 731 is surrounded by the bottom 72 of the box body 70 and the cover portion 813.

[0178] Next, the effects of the cooler A40 will be described.

[0179] The cooler A40 includes a housing 70 and a partition wall 81. The housing 70 includes an opening portion 711 located on one side of the first direction z, an inner hollow portion 73 connected to the opening portion 711, and a bottom portion 72 located on the opposite side of the opening portion 711 with respect to the inner hollow portion 73. The inner hollow portion 73 includes a first storage portion 731 and a second storage portion 732 divided by the partition wall 81. The partition wall 81 includes an overflow portion 811 which overlaps with the opening portion 711 when viewed in the first direction z and is farthest from the bottom 72 of the housing 70. The overflow portion 811 is located between the bottom portion 72 and the opening portion 711. By adopting this structure, even in the cooler A40, the energy loss of the flow of the refrigerant is suppressed, so that the refrigerant can easily spread throughout the entire cooling object.

[0180] In the cooler A40, the overflow portion 811 is away from the opening portion 711 in the first direction z. By adopting this structure, even when the cooler A10 is replaced with the cooler A40 in the above-mentioned cooling structure C10, a gap is set between the overflow portion 811 and the semiconductor device B in the first direction z. As a result, the refrigerant flows down in the gap, so the refrigerant can pass over the overflow portion 811. Therefore, according to the above structure, even in the cooler A40, the energy loss of the flow of the refrigerant can be suppressed, and the cooling efficiency can be improved.

[0181] In the cooler A40, when viewed in the first direction z, the second storage portion 732 surrounds the first storage portion 731. Furthermore, when viewed in the first direction z, the first storage portion 731 overlaps with the center C of the opening portion 711 of the box body 70. By adopting this structure, the flow of the refrigerant that passes over the overflow portion 811 of the partition wall 81 is radial when viewed in the first direction z. As a result, the deviation of the flow of the refrigerant that contacts the semiconductor device B can be further reduced.

[0182] In the cooler A40, the cover portion 813 of the partition wall 81 is away from the overflow portion 811 of the partition wall 81 in the first direction z. By adopting this structure, the second storage portion 732 can surround the first storage portion 731 when viewed in the first direction z.

[0183] The cooler A40 has the same structure as the cooler A10, thereby achieving the same effect as the cooler A10. As described above, the cooling structure C10 may also include the cooler A40 instead of the cooler A10. Furthermore, the cooler A40 may also have the same structure as the cover member 82 as the above-mentioned cooler A20.

[0184] Third embodiment (cooling structure of semiconductor device):

[0185] Next, based on Fig.38, a cooling structure C30 (hereinafter referred to as "cooling structure C30") of a third embodiment of the present disclosure is described. In these figures, the same or similar elements as those of the above-mentioned cooling structure C10 and cooling structure C20 are marked with the same symbols, and repeated descriptions are omitted.

[0186] The cooling structure C30 includes a cooler A50, a plurality of semiconductor devices B, a plurality of mounting components 88, a branch path 76, and a confluence path 77. The cooler A50 is a structure in which a plurality of coolers A20 are arranged along a third direction y and their respective boxes 70 are connected to each other. In addition, the cooler A50 may also be a structure in which any one of a plurality of coolers A10, a plurality of coolers A30, and a plurality of coolers A40 is arranged along a third direction y and their respective boxes 70 are connected to each other.

[0187] Therefore, if Fig.38 As shown, the cooler A50 is provided with a plurality of inner hollows 73 arranged in a direction perpendicular to the first direction z. The plurality of inner hollows 73 are respectively recessed in the first direction z.

[0188] like Fig.38 As shown, the plurality of semiconductor devices B are mounted on the plurality of cover members 82 of the cooler A50 via the plurality of mounting members 88. When viewed in the first direction z, the plurality of semiconductor devices B overlap with the plurality of inner hollow portions 73, respectively.

[0189] A plurality of inflow passages 74 and a plurality of outflow passages 75 are provided at the bottom 72 of the box 70 of the cooler A50. Each of the plurality of inflow passages 74 and each of the plurality of inflow passages 74 extend outward from the bottom 72. The plurality of inflow passages 74 are connected to the plurality of inner hollow portions 73, respectively. The plurality of outflow passages 75 are connected to the plurality of inner hollow portions 73, respectively.

[0190] like Fig.38 As shown, the branch flow path 76 is connected to the inflow portion 741 of each of the plurality of inflow paths 74. Fig.38 As shown, the confluent passage 77 is connected to the outflow portions 751 of each of the plurality of outflow passages 75 .

[0191] Fig.38The arrow indicates the direction of flow of the refrigerant in the cooling structure C30. The refrigerant supplied from the outside to the branch flow path 76 flows into the multiple inner hollow portions 73 respectively via the multiple inlet paths 74. Then, the refrigerant flowing into the multiple inner hollow portions 73 respectively flows down the confluent path 77 via the multiple outflow paths 75. The refrigerant flowing into the confluent path 77 is discharged to the outside. Therefore, in the cooler A50, the multiple outflow paths 75 are respectively set as different systems with respect to any one of the multiple inflow paths 74. Therefore, in the cooling structure C30, the refrigerant does not flow down any of the multiple inflow paths 74 until the refrigerant flowing in each of the multiple outflow paths 75 is discharged to the outside.

[0192] Next, the effects of the cooling structure C30 will be described.

[0193] The cooling structure C30 includes a cooler A50 having a plurality of inner hollows 73 and a plurality of semiconductor devices B mounted on the cooler A50. When viewed in the first direction z, the plurality of semiconductor devices B overlap with the plurality of inner hollows 73, respectively. The cooler A50 is provided with a plurality of inflow paths 74 and a plurality of outflow paths 75 set as a system different from the plurality of inflow paths 74. The plurality of inflow paths 74 are connected to the plurality of inner hollows 73, respectively. The plurality of outflow paths 75 are connected to the plurality of inner hollows 73, respectively. By adopting this structure, the refrigerant flow system in the plurality of inner hollows 73 becomes parallel. As a result, the refrigerant flowing into each of the plurality of inner hollows 73 is at a relatively low temperature and has a uniform temperature. Therefore, the cooling efficiency of the plurality of semiconductor devices B can be improved. Moreover, compared with the case where the refrigerant flow system in the plurality of inner hollows 73 is connected in series, at least the number of times the refrigerant flow cross section rapidly expands is reduced, so that the energy loss of the flow of the refrigerant can be suppressed. Therefore, according to this configuration, even in the cooling structure C30, it is possible to suppress energy loss in the flow of the refrigerant and to improve the cooling efficiency.

[0194] The present disclosure is not limited to the above-described embodiment, and various design changes can be freely made to the specific structure of each part of the present disclosure.

[0195] The present disclosure includes the embodiments described in the following supplementary notes.

[0196] Note 1.

[0197] A cooler comprising:

[0198] A box body having: an opening located on one side in a first direction; an inner hollow portion connected to the opening; and a bottom portion located on the opposite side of the opening with respect to the inner hollow portion and defining a portion of the inner hollow portion; and

[0199] a partition wall rising from the bottom along the first direction and being received in the inner hollow portion,

[0200] The box body is provided with an inflow passage and an outflow passage respectively connected to the inner hollow part.

[0201] The inner hollow portion includes a first storage portion and a second storage portion divided by the partition wall.

[0202] The first storage unit is connected to the inflow path.

[0203] The second storage part is connected to the outflow path.

[0204] The partition wall has an overflow portion, which overlaps with the opening when viewed in the first direction and is farthest from the bottom.

[0205] The overflow portion is located between the bottom portion and the opening portion.

[0206] Note 2.

[0207] According to the cooler described in Appendix 1,

[0208] The overflow portion is spaced apart from the opening in the first direction.

[0209] Note 3.

[0210] A cooler as described in Appendix 1 or 2,

[0211] A cover member is further provided, the cover member having a base surface facing the opening and closing the opening,

[0212] The overflow portion is away from the base surface.

[0213] Note 4.

[0214] A cooler as described in Appendix 2 or 3,

[0215] When viewed in the first direction, the second storage portion surrounds the first storage portion.

[0216] Note 5.

[0217] According to the cooler described in Appendix 3,

[0218] The partition wall includes a first wall and a second wall, the first wall and the second wall overlap with the opening when viewed in the first direction and are separated from each other in a second direction orthogonal to the first direction.

[0219] Either the first storage portion or the second storage portion is located between the first wall and the second wall.

[0220] Note 6.

[0221] According to the cooler described in Appendix 5,

[0222] The first wall and the second wall extend in a third direction perpendicular to the first direction and the second direction, respectively.

[0223] Note 7.

[0224] According to the cooler described in Appendix 6,

[0225] The first storage portion is located between the first wall and the second wall.

[0226] Note 8.

[0227] According to the cooler described in Appendix 7,

[0228] The first storage portion overlaps with a center of the opening when viewed in the first direction.

[0229] Note 9.

[0230] A cooler according to any one of Supplementary Notes 2 to 8,

[0231] The inflow path and the outflow path are arranged at the bottom.

[0232] The inflow path and the outflow path respectively penetrate the bottom portion in the first direction.

[0233] Note 10.

[0234] A cooler according to any one of Supplementary Notes 2 to 9,

[0235] The box body has a main body, which includes the opening and defines a part of the inner hollow part.

[0236] The bottom portion is mounted on the main body portion.

[0237] Note 11.

[0238] A cooler according to any one of Supplementary Notes 2 to 10,

[0239] The main body and the partition wall are formed of a material containing resin.

[0240] Note 12.

[0241] According to the cooler described in Appendix 11,

[0242] The partition wall is integrated with the main body.

[0243] Note 13.

[0244] The cooler according to any one of Supplementary Notes 6 to 8,

[0245] The cover member is provided with a recessed portion, the recessed portion being recessed in the first direction and including a portion defined by the base surface,

[0246] The cover member has a heat dissipation portion protruding from the base surface.

[0247] The heat dissipation portion is accommodated in the recessed portion.

[0248] Note 14.

[0249] According to the cooler described in Appendix 13,

[0250] The heat dissipation portion includes a plurality of fins extending in the second direction respectively.

[0251] The plurality of fins are arranged along the third direction.

[0252] Note 15.

[0253] A cooling structure for a semiconductor device, comprising:

[0254] The cooler as described in Appendix 2; and

[0255] A semiconductor device mounted on the cooler,

[0256] The semiconductor device is mounted on the housing.

[0257] The semiconductor device blocks the opening.

[0258] Note 16.

[0259] According to the cooling structure of the semiconductor device described in Supplementary Note 15,

[0260] The semiconductor device comprises: a substrate; a conductive layer supported by the substrate; and a semiconductor element located on the opposite side of the substrate with respect to the conductive layer and bonded to the conductive layer.

[0261] The substrate blocks the opening.

[0262] Note 17.

[0263] A cooling structure for a semiconductor device, comprising:

[0264] The cooler as described in Appendix 3; and

[0265] A semiconductor device mounted on the cooler,

[0266] The semiconductor device is mounted on the cover member.

[0267] When viewed in the first direction, the semiconductor device overlaps with the opening.

[0268] Note 18.

[0269] A cooling structure for a semiconductor device, comprising:

[0270] A cooler having a plurality of inner hollow portions which are respectively recessed in a first direction and arranged in a direction perpendicular to the first direction; and

[0271] A plurality of semiconductor devices mounted on the cooler,

[0272] When viewed in the first direction, the plurality of semiconductor devices overlap with the plurality of inner spaces respectively.

[0273] The cooler is provided with a plurality of inflow paths and a plurality of outflow paths which are set as a system different from the plurality of inflow paths.

[0274] The plurality of inflow paths are connected to the plurality of inner spaces respectively.

[0275] The plurality of outflow paths are connected to the plurality of inner spaces, respectively.

[0276] Explanation of symbols

[0277] A10, A20, A30, A40, A50—cooler, B—semiconductor device, C10, C20, C30—cooling structure, 11—substrate, 111—insulating layer, 112—intermediate layer, 113—heat dissipation layer, 121—first conductive layer, 121A—first main surface, 121B—first back surface, 122—second supporting layer, 122A—second main surface, 122B—second back surface, 123—first adhesive layer, 13—first input terminal, 13A—covering portion, 13B—exposed portion, 14—output terminal, 14A—covering portion, 14B—exposed portion, 15—second input terminal, 15A—covering portion, 15B—exposed portion, 161—first signal terminal, 162—second signal terminal, 17 1—third signal terminal, 172—fourth signal terminal, 181—fifth signal terminal, 182—sixth signal terminal, 19—seventh signal terminal, 21—semiconductor element, 21A—first element, 21B—second element, 211—first electrode, 212—second electrode, 213—third electrode, 214—fourth electrode, 22—thermistor, 23—conductive bonding layer, 31—first conductive component, 311—main body, 312—first bonding portion, 313—first connecting portion, 314—second bonding portion, 315—second connecting portion, 32—second conductive component, 321—main body, 322—third bonding portion, 323—third connecting portion, 324—fourth bonding portion, 325—fourth connecting portion, 326—fourth connecting portion, 327—fourth connecting portion, 328—fourth connecting portion, 329—fourth connecting portion, 330—fourth connecting portion, 331—fourth connecting portion, 332—fourth connecting portion, 333—fourth connecting portion, 334—fourth connecting portion, 335—fourth connecting portion, 336—fourth connecting portion, 337—fourth connecting portion, 338—fourth connecting portion, 339—fourth connecting portion, 331 ...1—fourth connecting portion, 332—fourth connecting portion 6—middle portion, 327—crossbeam portion, 33—first conductive bonding layer, 34—second conductive bonding layer, 35—third conductive bonding layer, 36—fourth conductive bonding layer, 41—first wire, 42—second wire, 43—third wire, 44—fourth wire, 50—sealing resin, 51—top surface, 52—bottom surface, 53—first side surface, 54—second side surface, 55—recess, 60—control wiring, 601—first wiring, 602—second wiring, 61—insulating layer, 62—wiring layer, 621—first wiring layer, 622—second wiring layer, 623—third wiring layer, 624—fourth wiring layer, 625—fifth wiring layer, 63—metal layer, 64—sleeve, 641—end surface, 68—second adhesive layer , 69—third adhesive layer, 70—box, 71—main body, 71A—main surface, 711—opening, 712—mounting hole, 713—groove, 72—bottom, 72A—back, 73—inner hollow, 731—first storage, 732—second storage, 74—inflow path, 741—inflow, 75—outflow, 751—outflow, 76—diversion path, 77—merging path, 81—partition, 81A—first partition, 81B—second partition, 81C—third partition, 81D—fourth partition, 81E—fifth partition, 811—overflow, 812—annular, 813—cover, 82—lid component, 821—base, 822—sunk, 823—heat dissipation, 824—through hole,825—connecting component, 88—installing component, 89—connecting component, z—first direction, x—second direction, y—third direction.

Claims

1. A cooler, characterized in that: have: A box body having: an opening located on one side in a first direction; an inner hollow portion connected to the opening; and a bottom located on the opposite side of the opening with respect to the inner hollow portion and defining a part of the inner hollow portion; and a partition wall rising from the bottom along the first direction and being received in the inner hollow portion, The box body is provided with an inflow passage and an outflow passage respectively connected to the inner hollow part. The inner hollow portion includes a first storage portion and a second storage portion divided by the partition wall. The first storage unit is connected to the inflow path. The second storage part is connected to the outflow path. The partition wall has an overflow portion, which overlaps with the opening when viewed in the first direction and is farthest from the bottom. The overflow portion is located between the bottom portion and the opening portion.

2. The cooler according to claim 1, characterized in that The overflow portion is spaced apart from the opening in the first direction.

3. The cooler according to claim 1 or 2, characterized in that: A cover member is further provided, the cover member having a base surface facing the opening and closing the opening, The overflow portion is away from the base surface.

4. The cooler according to claim 2 or 3, characterized in that: When viewed in the first direction, the second storage portion surrounds the first storage portion.

5. The cooler according to claim 3, characterized in that The partition wall includes a first wall and a second wall, the first wall and the second wall overlap with the opening when viewed in the first direction and are separated from each other in a second direction orthogonal to the first direction. Either the first storage portion or the second storage portion is located between the first wall and the second wall.

6. The cooler according to claim 5, characterized in that The first wall and the second wall extend in a third direction perpendicular to the first direction and the second direction, respectively.

7. The cooler according to claim 6, characterized in that The first storage portion is located between the first wall and the second wall.

8. The cooler according to claim 7, characterized in that The first storage portion overlaps with a center of the opening when viewed in the first direction.

9. The cooler according to any one of claims 2 to 8, characterized in that The inflow path and the outflow path are arranged at the bottom. The inflow path and the outflow path respectively penetrate the bottom portion in the first direction.

10. The cooler according to any one of claims 2 to 9, characterized in that The box body has a main body, which includes the opening and defines a part of the inner hollow part. The bottom portion is mounted on the main body portion.

11. The cooler according to any one of claims 2 to 10, characterized in that The main body and the partition wall are formed of a material containing resin.

12. The cooler according to claim 11, characterized in that The partition wall is integrated with the main body.

13. The cooler according to any one of claims 6 to 8, characterized in that The cover member is provided with a recessed portion, the recessed portion being recessed in the first direction and including a portion defined by the base surface, The cover member has a heat dissipation portion protruding from the base surface. The heat dissipation portion is accommodated in the recessed portion.

14. The cooler according to claim 13, characterized in that The heat dissipation portion includes a plurality of fins extending in the second direction respectively. The plurality of fins are arranged along the third direction.

15. A cooling structure for a semiconductor device, characterized in that: have: The cooler of claim 2; and A semiconductor device mounted on the cooler, The semiconductor device is mounted on the housing. The semiconductor device blocks the opening.

16. The cooling structure of the semiconductor device according to claim 15, characterized in that: The semiconductor device comprises: a substrate; a conductive layer supported by the substrate; and a semiconductor element located on the opposite side of the substrate with respect to the conductive layer and bonded to the conductive layer. The substrate blocks the opening.

17. A cooling structure for a semiconductor device, characterized in that: have: The cooler according to claim 3; and A semiconductor device mounted on the cooler, The semiconductor device is mounted on the cover member. When viewed in the first direction, the semiconductor device overlaps with the opening.

18. A cooling structure for a semiconductor device, characterized in that: have: A cooler having a plurality of inner hollow portions which are respectively recessed in a first direction and arranged in a direction perpendicular to the first direction; and A plurality of semiconductor devices mounted on the cooler, When viewed in the first direction, the plurality of semiconductor devices overlap with the plurality of inner spaces respectively. The cooler is provided with a plurality of inflow paths and a plurality of outflow paths which are set as a system different from the plurality of inflow paths. The plurality of inflow paths are connected to the plurality of inner spaces respectively. The plurality of outflow paths are connected to the plurality of inner spaces, respectively.

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