LCD etching equipment wallboard anodic oxidation surface treatment process

Abstract

The invention discloses an anodic oxidation surface treatment process for a wallboard of LCD (liquid crystal display) etching equipment, belongs to the field of wallboard processing treatment, and aims to solve the problems that the concentration of an existing NaOH solution is too high, the consumption of the wallboard is relatively large when the wallboard is soaked, and the surface of the wallboard is corroded by liquid medicine. The surface of the wallboard is treated through the process steps of demolding, grinding, polishing, liquid medicine treatment, anodic oxidation, high-pressure cleaning, hole sealing and blow-drying, the concentration of a NaOH solution is reduced to about 10 g / L from original about 50 g / L, and the situations that the wallboard is consumed due to liquid medicine soaking and the surface of the wallboard is corroded by the liquid medicine are reduced through the method of reducing the concentration; and moreover, the effect required by controlling the etching rate is achieved by controlling the soaking temperature of the liquid medicine, so that the use performance is better met.

Description

Technical Field

[0001] The invention relates to the field of wallboard processing, and in particular to an anodized surface treatment process for a wallboard of an LCD etching device. Background Art

[0002] The production process of thin-film transistor liquid crystal display (TFT-LCD) is mainly composed of four modules: Array, CF, Cell and Module. The Array process is to manufacture TFT circuits on a glass substrate, and its main process consists of three parts: thin film deposition, exposure and etching.

[0003] Dry etching in the etching process refers to dry etching. The inner wall plate of the dry etching machine is in a high-temperature and high-vacuum environment during operation, and is subjected to plasma sputtering, corrosion and damage from the atmosphere. The inner wall plate is made of aluminum alloy material, with an anodized film layer and a yttrium oxide spray film layer on the use side, and an anodized film layer on the non-use side. In order to improve its service life and meet working performance, the current market process for wall panel surface treatment is degreasing-demolding-pickling-grinding-liquid immersion-anodization. When stripping, the concentration of the liquid is too high (the current concentration of NaOH solution is about 50g / L). Soaking will consume a lot of wall panels, and the surface of the wall panels will be corroded by the liquid, resulting in further thinning of the wall panels. The thickness of the anodized film layer of the wall panel is generally required to be 40μm. Due to the above reasons, each maintenance and regeneration will be thinned by about 50μm, and it will be thinned by about 0.5mm after 10 maintenances. Since the wall panels themselves are relatively thin, only 3 to 5 mm thick, after being thinned by 0.5 mm, their performance could not meet the requirements of the machine and they were eventually scrapped, which in turn increased the cost of wall panel maintenance.

[0004] Therefore, in order to solve this problem, the applicant provides an anodized surface treatment process for the wall panels of LCD etching equipment to reduce the consumption of the wall panels caused by the immersion of the chemical solution and the corrosion of the wall panel surface by the chemical solution. Summary of the invention

[0005] In view of the shortcomings of the prior art, the present invention aims to provide an anodized surface treatment process for a wall plate of an LCD etching device.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0008] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 8g / L to 12g / L for 14.5 to 30 minutes at a temperature of 20 to 30°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 270g / L to 330g / L. Keep it at room temperature for 10 minutes to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse it with pure water and blow it with a compressed air dryer until there is no water droplets on the surface. This is considered to be demolding complete;

[0009] S2. Polishing: Place the demoulding wall panel on the polishing table, and polish it with 180#, 240#, and 320# sandpaper in turn. Preferably, the size of the sandpaper is five inches. The sandpaper is polished twice horizontally and vertically, and then polished counterclockwise in a circular motion. Then, a scouring pad is used for polishing. The scouring pad is used for polishing twice horizontally and vertically to remove the residual film on the wall panel surface, so that the roughness RA of the wall panel surface is less than 1um.

[0010] S3. Polishing: The polished wallboard is immersed in a mixed solution of phosphoric acid and sulfuric acid with a solution concentration of 50g / L for chemical polishing to dissolve the waste residue on the wallboard surface to obtain a polished surface, so that the roughness of the wallboard surface is RA0.65-RA0.95. The roughness of the wallboard surface is reduced by chemical polishing, and cracks are effectively reduced, which can reach the limit of manual polishing. In the chemical polishing process, it is necessary to fully pump air, that is, the gas pipeline in the mixing tank containing phosphoric acid and sulfuric acid needs to be blown and stirred to avoid gas marks, flow marks and even surface corrosion caused by poor chemical polishing;

[0011] S4. Liquid treatment: The polished siding is immersed in a NaOH solution having a concentration of 8 g / L to 12 g / L for 3 min at a temperature of 20 to 30 ° C. After immersion, it is rinsed with pure water and then immersed in a HNO3 solution having a concentration of 270 g / L to 330 g / L at room temperature for 10 min to remove residual attachments on the siding surface;

[0012] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.5-1A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0013] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0014] Preferably, the wall panels are degreased before the demoulding step to remove grease and dust contaminants on the surface of the wall panels; the immersion temperature can be controlled by feedback of the liquid temperature through a temperature sensor, heating by a heater, and cooling by a cooler; high-pressure cleaning can be performed by an existing high-pressure cleaning machine, which reduces the difficulty and design and production costs of the production line, and effectively saves manpower and time costs; the honeycomb pores generated during the anodizing process are sealed with a nickel-containing sealing agent, thereby improving the anti-pollution, corrosion resistance, wear resistance and light resistance of the anodized film, thereby ensuring the stable performance of the anodized film.

[0015] Furthermore, in S1, the concentration of the NaOH solution is 10 g / L.

[0016] Furthermore, in S1, the soaking time is 30 minutes.

[0017] Further, in S1, the soaking temperature is 20°C, 23°C, 26°C or 30°C.

[0018] Further, in S1, the concentration of the HNO3 solution is 300 g / L.

[0019] Further, in S4, the concentration of the NaOH solution is 10 g / L.

[0020] Further, in S4, the soaking temperature is 20°C, 23°C, 26°C or 30°C.

[0021] Further, in S4, the concentration of the HNO3 solution is 300 g / L.

[0022] Further, in S5, the current density is 0.8A / dm 2 .

[0023] Furthermore, in S6, the nickel-containing sealing agent is prepared by heating pure water to 85°C and then adding sealing powder, and then stirring to form the nickel-containing sealing agent.

[0024] Compared with the prior art, the present invention provides an anodized surface treatment process for a wall plate of an LCD etching device, which has the following beneficial effects:

[0025] 1. The present invention reduces the concentration of NaOH solution from about 50 g / L (i.e. 5%) to about 10 g / L (i.e. 1%), thereby reducing the consumption of the wallboard caused by the immersion of the solution and the corrosion of the wallboard surface by the solution, and controls the immersion temperature of the solution to achieve the desired effect of controlling the etching rate, so as to better meet the performance requirements;

[0026] 2. Chemical polishing is performed by mixing phosphoric acid and sulfuric acid, which reduces the roughness of the wall panel surface, effectively reduces cracks, and can reach the limit of manual polishing;

[0027] 3. In anodizing operation, the mixed acid method (mixture of oxalic acid and sulfuric acid) can generate a corrosion-resistant and voltage-resistant oxide film with good economic efficiency;

[0028] 4. There will be a large number of holes on the anodized film, and its surface has a strong adsorption capacity, which is easy to absorb pollutants or corrosive substances. The honeycomb holes produced during the anodizing process are sealed with a nickel-containing sealing agent to improve the anti-pollution ability, corrosion resistance, wear resistance and light resistance of the anodized film, thereby ensuring the stable performance of the anodized film. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0030] Example 1

[0031] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0032] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 30 minutes at a temperature of 20°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which is considered to be demolding complete;

[0033] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0034] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0035] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 20 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0036] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0037] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0038] Example 2

[0039] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0040] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 30 minutes at a temperature of 23°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which means that demolding is completed;

[0041] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0042] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0043] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 23 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0044] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0045] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0046] Example 3

[0047] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0048] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 30 minutes at a temperature of 26°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which means that demolding is completed;

[0049] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0050] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0051] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 26 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the siding surface;

[0052] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0053] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0054] Example 4

[0055] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0056] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 30 minutes at a temperature of 30°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which is considered to be demolding complete;

[0057] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0058] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0059] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 30 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0060] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0061] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0062] Example 5

[0063] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0064] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 8g / L for 30 minutes at a temperature of 20°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which means that demolding is completed;

[0065] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0066] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0067] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 8g / L NaOH solution for 3min at a temperature of 20 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0068] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0069] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0070] Example 6

[0071] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0072] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 12g / L for 30 minutes at a temperature of 20°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which means that demolding is completed;

[0073] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0074] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0075] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 12g / L NaOH solution for 3min at a temperature of 20 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0076] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0077] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0078] Example 7

[0079] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0080] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 8g / L for 30 minutes at a temperature of 30°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which means that demolding is completed;

[0081] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0082] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0083] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 8g / L NaOH solution for 3min at a temperature of 30 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0084] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0085] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0086] Example 8

[0087] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0088] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 12g / L for 30 minutes at a temperature of 30°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which means that demolding is completed;

[0089] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0090] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0091] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 12g / L NaOH solution for 3min at a temperature of 30 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0092] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0093] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0094] Example 9

[0095] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0096] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 14.5min at a temperature of 20°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10min at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which is considered to be demolding complete;

[0097] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0098] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0099] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 20 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0100] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0101] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0102] Example 10

[0103] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0104] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 20 minutes at a temperature of 20°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which means that demolding is completed;

[0105] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0106] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0107] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 20 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0108] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0109] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0110] Embodiment 11

[0111] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0112] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 25min at a temperature of 20°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10min at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface. This is considered to be demolding completion;

[0113] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0114] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0115] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 20 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0116] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0117] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0118] Example 12

[0119] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0120] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 14.5min at a temperature of 23°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10min at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface. Demolding is considered complete;

[0121] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0122] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0123] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 23 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0124] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0125] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0126] Example 13

[0127] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0128] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 14.5min at a temperature of 26°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10min at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface, which is considered to be demolding complete;

[0129] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0130] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0131] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 26 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the siding surface;

[0132] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0133] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0134] Embodiment 14

[0135] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0136] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 14.5min at a temperature of 30°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 300g / L for 10min at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface. This is considered to be demolding completion;

[0137] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0138] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0139] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 30 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 300g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0140] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0141] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0142] Embodiment 15

[0143] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0144] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 30 minutes at a temperature of 20°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 270g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse it with pure water and blow it with a compressed air dryer until there is no water droplets on the surface, which means that demolding is completed;

[0145] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0146] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0147] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 20 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 270g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0148] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0149] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0150] Example 16

[0151] An anodized surface treatment process for a wall plate of an LCD etching device comprises the following steps:

[0152] S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 10g / L for 30 minutes at a temperature of 20°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 330g / L for 10 minutes at room temperature to remove the ash on the wallboard surface. After the anodized film on the wallboard is completely removed, rinse it with pure water and blow it with a compressed air dryer until there is no water droplets on the surface, which means that the demolding is completed;

[0153] S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpapers in turn. The sandpaper polishing method is to polish it twice horizontally and vertically, and then polish it counterclockwise in a circular motion. Polish it twice horizontally and vertically, and then polish it with a scouring pad. The scouring pad polishing method is to polish it twice horizontally and vertically to remove the residual film layer on the siding surface, so that the roughness RA of the siding surface is less than 1um;

[0154] S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95;

[0155] S4. Liquid treatment: The polished siding was immersed in a solution concentration of 10g / L NaOH solution for 3min at a temperature of 20 ° C. After immersion, it was rinsed with pure water and then immersed in a solution concentration of 330g / L HNO3 solution at room temperature for 10min to remove residual attachments on the surface of the siding;

[0156] S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.8A / dm 2 , so that an oxide film is formed on the surface of the wall panel;

[0157] S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

[0158] Comparative Example 1

[0159] The concentration of NaOH solution in step S1 and step S4 in Example 1 is replaced with 50 g / L, and the remaining components and treatment process are the same as those in Example 1. The Etch Rate is obtained by the consumption of the chemical solution on the wallboard surface.

[0160] Comparative Example 2

[0161] The concentration of the NaOH solution in step S1 and step S4 in Example 2 is replaced with 50 g / L, and the remaining components and treatment process are the same as those in Example 2. The Etch Rate is obtained by the consumption of the chemical solution on the wallboard surface.

[0162] Comparative Example 3

[0163] The concentration of the NaOH solution in step S1 and step S4 in Example 3 is replaced with 50 g / L, and the remaining components and treatment process are the same as those in Example 3. The Etch Rate is obtained by the consumption of the chemical solution on the wallboard surface.

[0164] Comparative Example 4

[0165] The concentration of NaOH solution in step S1 and step S4 in Example 4 is replaced with 50 g / L, and the remaining components and treatment process are the same as those in Example 4. The Etch Rate is obtained by the consumption of the chemical solution on the wallboard surface.

[0166] Through the consumption of the medicinal solution on the wallboard surface in Examples 1-4 and Comparative Examples 1-4, the results of various Etch Rates are finally obtained, as shown in Table 1:

[0167] Table 1

[0168] Serial number Etch Rate(um / min) Etch Rate(mg / min) Example 1 0.251 5.671 Example 2 0.3151 6.9872 Example 3 0.3833 8.4889 Example 4 0.5050 11.1250 Example 5 0.2506 5.6702 Example 6 0.2514 5.6717 Example 7 0.5048 11.1245 Example 8 0.5053 11.1254 Example 9 0.289 6.5313 Example 10 0.273 6.1425 Embodiment 11 0.262 5.892 Example 12 0.3321 7.4391 Example 13 0.3978 8.9506 Embodiment 14 0.5189 11.6233 Embodiment 15 0.2512 5.675 Example 16 0.2511 5.673 Comparative Example 1 1.2124 26.8546 Comparative Example 2 1.2185 26.9897 Comparative Example 3 1.2203 27.0296 Comparative Example 4 1.2248 27.1293

[0169] By setting two etch rates, one in microns etched per minute and one in weight etched per minute, the results are made simpler and clearer.

[0170] From the etching rates obtained in Examples 1-4, it can be seen that when the concentration of the NaOH solution is 10 g / L, the etching rate can be controlled by controlling the immersion temperature of the solution to achieve the desired effect of controlling the etching rate. The etching rates embodied in Examples 1-4 can be better selected to meet the process requirements.

[0171] From the etching rates obtained in Examples 1, 5 and 6, it can be seen that when the concentrations of the NaOH solution are 10 g / L, 8 g / L and 12 g / L respectively, the other conditions remain unchanged and the etching rate changes very little, that is, when the concentration of the NaOH solution is about 10 g / L, the etching rate does not change much, and the NaOH solution concentrations within this range are suitable for the process requirements.

[0172] From the etching rates obtained in Examples 4, 7 and 8, it can be seen that when the concentrations of the NaOH solution are 10 g / L, 8 g / L and 12 g / L respectively, the other conditions remain unchanged and the etching rate changes very little, that is, when the concentration of the NaOH solution is about 10 g / L, the etching rate does not change much, and the NaOH solution concentrations within this range are suitable for the process requirements.

[0173] From the etching rates obtained in Examples 1, 9, 10 and 11, it can be seen that by only changing the immersion time of the wallboard in the NaOH solution and keeping other conditions unchanged, the longer the immersion time, the smaller the etching rate, that is, the etching rate causes greater consumption to the wallboard in the early stage, and the consumption to the wallboard will gradually decrease in the later stage.

[0174] From the etching rates obtained in Examples 9, 12, 13 and 14, it can be seen that when the immersion time is short, only the immersion temperature of the solution is changed, and the other conditions remain unchanged. The etching rate can still be controlled by controlling the immersion temperature of the solution to achieve the desired effect of controlling the etching rate. However, the etching rate is slightly higher than that when the immersion time is long. The NaOH solution concentration can still be selected within this range to meet the process requirements.

[0175] From the etching rates obtained in Examples 1, 15 and 16, it can be seen that only the concentration of the HNO3 solution is changed, while the other conditions remain unchanged. It can be seen that the effect of the HNO3 solution concentration on the etching rate is very small and almost negligible. The HNO3 solution only removes the residue on the surface of the wall panel and does not affect the etching rate.

[0176] From the etching rates obtained in Comparative Examples 1-4, it can be seen that when the concentration of the NaOH solution is 50 g / L, the change in the immersion temperature of the solution has little effect on the etching rate, and it is difficult to control the etching rate.

[0177] By comparing the etching rates obtained in Examples 1-8 and Comparative Examples 1-4, it can be seen that the etching rates vary greatly when the NaOH solution concentration is around 10 g / L and 50 g / L, and the etching rate when the NaOH solution concentration is 50 g / L is much faster than the etching rate when the NaOH solution concentration is around 10 g / L. Therefore, the consumption of the wallboard caused by the immersion of the solution and the corrosion of the wallboard surface by the solution are reduced by reducing the concentration, and the desired effect of controlling the etching rate is achieved by controlling the immersion temperature of the solution to better meet the performance requirements.

[0178] The contents not described in detail in this specification belong to the prior art known to professional and technical personnel in this field.

[0179] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the scope of protection of the invention. Obviously, the described embodiments are only some embodiments of the present invention, rather than all embodiments. Based on these embodiments, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. Although the present invention has been described in detail with reference to the above embodiments, ordinary technicians in this field can still combine, add, delete or make other adjustments to the features in the various embodiments of the present invention according to the circumstances without conflict, without making creative work, so as to obtain different other technical solutions that do not deviate from the concept of the present invention in essence, and these technical solutions also belong to the scope of protection of the present invention.

Claims

1. A process for anodizing the surface of a wall plate of an LCD etching device, characterized in that: The following steps are involved: S1. Demolding: Soak the wallboard in a NaOH solution with a concentration of 8g / L to 12g / L for 14.5 to 30 minutes at a temperature of 20 to 30°C. After soaking, rinse with pure water, and then soak in a HNO3 solution with a concentration of 270g / L to 330g / L. Keep at room temperature for 10 minutes. After the anodized film on the wallboard is completely removed, rinse with pure water and blow with a compressed air dryer until there is no water droplets on the surface. Demolding is considered complete; S2. Polishing: Place the demoulding siding on the polishing table, and polish it with 180#, 240#, and 320# sandpaper in turn, and then grind it with a scouring pad to remove the residual film on the siding surface, so that the roughness RA of the siding surface is less than 1um; S3 polishing: the polished wall panels are immersed in a solution concentration of 50g / L of a mixed solution of phosphoric acid and sulfuric acid, and chemically polished so that the wall panel surface roughness RA0.65 ~ RA0.95; S4. Liquid treatment: The polished siding is immersed in a NaOH solution having a concentration of 8 g / L to 12 g / L for 3 min at a temperature of 20 to 30 ° C. After immersion, it is rinsed with pure water and then immersed in a HNO3 solution having a concentration of 270 g / L to 330 g / L at room temperature for 10 min to remove residual attachments on the siding surface; S5. Anodizing: Place the wall panels treated in S4 into an oxidation tank, and pour in oxalic acid solution with a concentration of 40g / L and sulfuric acid solution with a concentration of 50g / L in turn and mix them. The current density is 0.5-1A / dm 2 , so that an oxide film is formed on the surface of the wall panel; S6. High-pressure cleaning, sealing and drying: The oxidized wall panels in S5 are subjected to high-pressure cleaning to remove residual attachments on the wall panel surface, and then sealed with a nickel-containing sealing agent. The wall panel surface is then dried with a compressed air dryer and allowed to stand for 24 hours to obtain an oxide film with high corrosion resistance.

2. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S1, the concentration of the NaOH solution is 10 g / L.

3. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S1, the soaking time is 30 minutes.

4. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S1, the soaking temperature is 20°C, 23°C, 26°C or 30°C.

5. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S1, the HNO3 solution has a concentration of 300 g / L.

6. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S4, the concentration of the NaOH solution is 10 g / L.

7. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S4, the soaking temperature is 20°C, 23°C, 26°C or 30°C.

8. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S4, the HNO3 solution has a concentration of 300 g / L.

9. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S5, the current density is 0.8A / dm 2 .

10. The anodized surface treatment process for the wall plate of LCD etching equipment according to claim 1, characterized in that: In S6, the nickel-containing sealing agent is prepared by heating pure water to 85°C and then adding sealing powder, and stirring to form the nickel-containing sealing agent.