Carrier pasting mechanism and carrier pasting method of plasma processing system
By using double-sided adhesive parts in the plasma process, using the difference in adhesive force to stay on the substrate to be processed, the warping and displacement problems caused by thermal factors are solved, and the process yield and alignment accuracy are improved .
Patent Information
- Application Number
- CN202311082567.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-08-25
- Publication Date
- 2025-02-25
AI Technical Summary
In the plasma process, the substrate to be processed warp or displacement due to thermal factors, resulting in the problem of process yield drop and inaccurate alignment.
When the substrate to be processed and the second electrode plate is separated by a double-sided adhesive member, the adhesive force difference between the first adhesive layer and the second adhesive layer is set, the substrate to be processed and the second electrode plate is separated. The surface adhesive is stuck on the substrate to be processed to prevent warping and displacement.
Effectively prevent the substrate to be processed from warping due to thermal factors, improve process yield, and avoid inaccurate alignment problems caused by displacement.
Smart Images
Figure CN119517712A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to a carrier pasting mechanism, and more particularly to a carrier pasting mechanism and a carrier pasting method of a plasma process system. Background Art
[0002] Due to the advancement of science and technology, many industrial technologies have gradually matured, especially in the semiconductor industry. From the perspective of the semiconductor industry, the process of wafers and circuit boards requires surface etching, cleaning and other process treatments. Among them, plasma treatment, as one of the main technologies for the process of semiconductors and circuit boards, naturally occupies a place.
[0003] During plasma processing, the heat generated in the plasma processing chamber may cause the object to be processed to warp or shift. To address this, edge clamping is generally used to fix the object to be processed in the plasma processing chamber to prevent the object from warping or slipping. However, during the clamping process, the object to be processed may shift due to contact with the clamping object, resulting in inaccurate alignment in subsequent processes.
[0004] Therefore, solving the above-mentioned problems is a major issue that the industry has to overcome. Summary of the invention
[0005] The main purpose of the present application is to improve the problem that the heat factor generated in the plasma process chamber in the past causes the substrate to be processed to warp, thereby resulting in a decrease in the process yield of the substrate to be processed.
[0006] Another object of the present application is to prevent the substrate to be processed from shifting while being fixed and clamped, thereby preventing the subsequent process from having inaccurate alignment.
[0007] The aforementioned purpose does not preclude the existence of other purposes. Any purpose that can be derived from the description, claims, or drawings by a person skilled in the art is also included in the purpose of this application. Therefore, the purpose of this application is not limited to the aforementioned purposes.
[0008] In order to achieve the above-mentioned purpose, the present application provides a carrier pasting mechanism of a plasma process system, which is arranged in a vacuum plasma process chamber and is used to perform a plasma process on a substrate to be processed. A first electrode is arranged in the vacuum plasma process chamber, and the carrier pasting mechanism includes a second electrode plate and a double-sided pasting member. The first electrode and the second electrode plate are arranged correspondingly, and a plasma process space is formed between the second electrode plate and the first electrode; the double-sided pasting member is arranged between the substrate to be processed and the second electrode plate, and the pasting force of the double-sided pasting member adjacent to the side of the substrate to be processed is greater than the pasting force of the double-sided pasting member adjacent to the side of the second electrode plate, so that when the substrate to be processed is separated from the second electrode plate, the double-sided pasting member stays on the substrate to be processed.
[0009] In a preferred embodiment of the present application, the double-sided adhesive component includes a first adhesive layer adjacent to one side of the substrate to be processed, a second adhesive layer adjacent to one side of the second electrode plate, and a main body layer located between the first adhesive layer and the second adhesive layer. The adhesive force of the first adhesive layer is greater than the adhesive force of the second adhesive layer, and the difference between the adhesive force of the first adhesive layer and the adhesive force of the second adhesive layer is greater than 0.3 kg / inch.
[0010] In a preferred embodiment of the present application, the second electrode plate further includes a low-adhesion surface adjacent to the double-sided adhesive member.
[0011] In a preferred embodiment of the present application, the adhesive force of the double-sided adhesive is between 0.05 kg / inch and 1 kg / inch.
[0012] In a preferred embodiment of the present application, the thickness of the double-sided adhesive piece is between 0.05 mm and 0.5 mm.
[0013] In a preferred embodiment of the present application, there are multiple double-sided adhesive members, which are arranged at intervals on the surface of the substrate to be processed, so that the substrate to be processed has multiple sticking areas for sticking with these double-sided adhesive members and multiple exposed areas outside these sticking areas.
[0014] In a preferred embodiment of the present application, the sticking areas and the exposed areas are in the shape of long strips and are arranged in strips on the surface of the substrate to be processed.
[0015] In a preferred embodiment of the present application, these exposed areas are arranged in a grid shape on the surface of the substrate to be processed.
[0016] In a preferred embodiment of the present application, the second electrode plate further includes a separation unit, and the separation unit is adjacent to the substrate to be processed to separate the substrate to be processed from the second electrode plate.
[0017] In a preferred embodiment of the present application, the separation unit includes a gas injection channel and a gas seal arranged corresponding to the exposed area. The gas seal is arranged between the substrate to be processed and the second electrode plate, and surrounds the gas injection channel and the substrate to be processed to form a closed space between the substrate to be processed and the second electrode plate. The gas injection channel inputs gas into the closed space to force the substrate to be processed and the second electrode plate to separate.
[0018] In a preferred embodiment of the present application, the separation unit includes a plurality of metal columns spaced apart corresponding to the exposed area, and these metal columns can move between the substrate to be processed and the second electrode plate. These metal columns push the substrate to be processed to separate the substrate to be processed and the second electrode plate.
[0019] In another embodiment of the present application, the present application provides a carrier pasting method of a plasma process system, which performs a plasma process on a substrate to be processed in a vacuum plasma process chamber, wherein a first electrode is disposed in the vacuum plasma process chamber. The carrier pasting method comprises the following steps: Step S1: providing a double-sided adhesive member, the double-sided adhesive member comprising a first adhesive layer and a second adhesive layer; Step S2: disposing a first adhesive layer on one side of the substrate to be processed and a second adhesive layer on one side of a second electrode plate to fix the substrate to be processed and perform a plasma process, and the adhesive force between the substrate to be processed and the first adhesive layer is greater than the adhesive force between the second electrode plate and the second adhesive layer; Step S3: separating the substrate to be processed from the second electrode plate; and Step S4: Separate the double-sided adhesive from the substrate to be processed. In a preferred embodiment of the present application, after step S3, a step S4 is also included: open the first buffer gate to output one or all of the substrates, and spray the substrates through a first nitrogen module disposed in the first buffer chamber.
[0020] In a preferred embodiment of the present application, in step S2: the difference between the adhesive force of the first adhesive layer and the adhesive force of the second adhesive layer is greater than 0.3 kg / inch.
[0021] In a preferred embodiment of the present application, in step S3: a low-adhesion surface adjacent to the second adhesive layer is provided by the second electrode plate so that when the substrate to be processed is separated from the second electrode plate, the double-sided adhesive piece stays on the substrate to be processed.
[0022] In a preferred embodiment of the present application, in step S3: a separation unit adjacent to the substrate to be processed is provided through the second electrode plate to separate the substrate to be processed and the second electrode plate.
[0023] In a preferred embodiment of the present application, in step S3: the separation unit provides a gas injection channel corresponding to a plurality of exposed areas of the substrate to be processed and a gas seal disposed between the substrate to be processed and the second electrode plate, the gas seal surrounds the gas injection channel and the substrate to be processed, and forms a closed space between the substrate to be processed and the second electrode plate, and gas is input into the closed space through the gas injection channel to force the substrate to be processed and the second electrode plate to separate.
[0024] In a preferred embodiment of the present application, in step S3: the separation unit provides a plurality of metal columns which are spaced apart corresponding to the plurality of exposed areas of the substrate to be processed, and these metal columns can move between the substrate to be processed and the second electrode plate, and the substrate to be processed is pushed up by these metal columns to separate the substrate to be processed and the second electrode plate.
[0025] According to the above technical features, this application has the following characteristics: 1. The present application can adhere the substrate to be processed to the second electrode plate by the high adhesive force of the double-sided adhesive. In this way, the substrate to be processed can be effectively prevented from warping due to heat factors, thereby increasing the process yield of the substrate to be processed.
[0026] 2. The present application prevents displacement of the substrate to be processed and avoids the problem of inaccurate alignment in subsequent processes by disposing a double-sided adhesive member between the substrate to be processed and the second electrode plate.
[0027] 3. The present invention makes the adhesive force of the double-sided adhesive piece adjacent to the substrate to be processed greater than the adhesive force of the double-sided adhesive piece adjacent to the second electrode plate, so that the double-sided adhesive piece can stay on the substrate to be processed when the substrate to be processed and the second electrode plate are separated, thereby reducing the situation where the double-sided adhesive piece cannot be separated due to being too tightly adhered. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] Figure 1 A schematic diagram of a vacuum plasma process chamber implementation of a preferred embodiment of the present application; Figure 2 This is a three-dimensional schematic diagram of the carrier pasting mechanism of a preferred embodiment of the present application; Figure 3 This is a three-dimensional schematic diagram of the carrier pasting mechanism of another preferred embodiment of the present application; Figure 4 A schematic diagram of the relationship between the thickness of a double-sided adhesive member and the temperature of a substrate to be processed in a preferred embodiment of the present application; Figure 5A A schematic diagram of a carrier pasting mechanism according to a preferred embodiment of the present application; Figure 5B for Figure 5A A local enlarged schematic diagram of point A; Figure 6 A schematic cross-sectional view of a double-sided adhesive structure according to a preferred embodiment of the present application; Fig. 7A This is a schematic diagram of a carrier pasting mechanism of a second preferred embodiment of the present application; Figure 7B for Fig. 7A A local enlarged schematic diagram of point A; Fig. 8A This is a schematic diagram of a carrier pasting mechanism according to a third preferred embodiment of the present application; Figure 8B for Fig. 8A A local enlarged schematic diagram of point A; Figure 8C for Fig. 8A A local enlarged schematic diagram of point B; Fig. 9A This is a schematic diagram of a carrier pasting mechanism of a fourth preferred embodiment of the present application; Fig. 9B for Fig. 9A A local enlarged schematic diagram of the circle; Fig. 10A This is a schematic diagram of the implementation of the carrier pasting mechanism of the fourth preferred embodiment of the present application; Fig. 10B for Fig. 10A A local enlarged schematic diagram of the circle; Fig.11A This is a schematic diagram of a carrier pasting mechanism of a fifth preferred embodiment of the present application; Fig. 11B for Fig.11A A local enlarged schematic diagram of the circle; Fig.12 Schematic diagram of the carrier pasting method steps of a preferred embodiment of the present application.
[0029] Description of Reference Numerals 100: carrier pasting mechanism; 1: vacuum plasma process chamber; 2: substrate to be processed; 2a: pasting area; 2b: exposed area; 3: first electrode; 4: Plasma process space; 5: Enclosed space; 10: second electrode plate; 11: separation unit; 111: air filling channel; 112: air sealing member; 113: Metal cylinder; 20: Double-sided adhesive piece; 23: first adhesive layer; 24: body layer; 25: second adhesive layer; 26: low adhesive surface; 30: limit unit; S1: step; S2: step; S3: step; S4: Step. DETAILED DESCRIPTION
[0030] In order to facilitate the description of the central idea of the present application in the above invention content column, specific embodiments are used for expression. Various objects in the embodiments are depicted according to the proportions, sizes, deformations or displacements suitable for description, rather than being drawn according to the proportions of actual components, which should be explained first.
[0031] The following describes in detail exemplary embodiments of the present application with reference to the accompanying drawings, and is not intended to limit the technical principles of the present application to the specific disclosed embodiments. Instead, the scope of the present application is limited only by the claims and covers alternatives, modifications and equivalents.
[0032] See also Figures 1 to 6 As shown, the present application provides a carrier pasting mechanism 100 of a plasma process system, which is arranged in a vacuum plasma process chamber 1 and used to perform a plasma process on a substrate 2 to be processed. A first electrode 3 is arranged in the vacuum plasma process chamber 1, and the carrier pasting mechanism 100 includes a second electrode plate 10 and a double-sided pasting member 20. In the embodiment of the present application, the substrate 2 to be processed can be a wafer, a circuit substrate (e.g., PCB, FPCB), a composite substrate, a soft board, an ABF substrate, etc., which require plasma etching, cleaning, and coating in the vacuum plasma process chamber 1.
[0033] Please refer to Figure 1 As shown, the first electrode 3 and the second electrode plate 10 are correspondingly arranged, and a plasma processing space 4 is formed between the second electrode plate 10 and the first electrode 3 . The substrate 2 to be processed is subjected to plasma processing in the plasma processing space 4 .
[0034] The double-sided adhesive member 20 is arranged between the substrate to be processed 2 and the second electrode plate 10. The adhesive force of the double-sided adhesive member 20 adjacent to the side of the substrate to be processed 2 is greater than the adhesive force of the double-sided adhesive member 20 adjacent to the side of the second electrode plate 10, so that when the substrate to be processed 2 and the second electrode plate 10 are separated, the double-sided adhesive member 20 stays on the substrate to be processed 2.
[0035] In a preferred embodiment of the present application, the double-sided adhesive member 20 can be made of silicone material to adhere to the substrate 2 to be processed, and the substrate 2 to be processed can obtain a higher adhesion to prevent the substrate 2 to be processed from warping and arbitrary displacement during the plasma process. The adhesion of the double-sided adhesive member 20 can be between 0.05kg / inch and 1kg / inch, for example: 0.05, 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8, 0.9 and 1.0kg / inch. In addition, the double-sided adhesive member 20 has the material property of being repeatedly adhered to the substrate 2 to be processed.
[0036] Please refer to Figure 2 as shown. First, it should be noted that in order to facilitate the disclosure of the positional relationship of the double-sided adhesive member 20, in Figure 2 the substrate 2 to be processed is transparently displayed. In a preferred embodiment of the present application, there are multiple double-sided adhesive members 20, and these double-sided adhesive members 20 are arranged at intervals on the surface of the substrate 2 to be processed, so that the substrate 2 to be processed has a plurality of adhesive areas 2a adhered to these double-sided adhesive members 20 and a plurality of exposed areas 2b outside these adhesive areas 2a. More specifically, these adhesive areas 2a and these exposed areas 2b can be strip-shaped and are arranged in a strip shape on the surface of the substrate 2 to be processed. Please refer to Figure 3 as shown. In another embodiment of the present application, these exposed areas 2b can be arranged in a cross shape on the surface of the substrate 2 to be processed, so that these adhesive areas 2a are square. Further, these exposed areas 2b are further extended towards the diagonal from the cross shape, so that these adhesive areas 2a are triangular.
[0037] Please refer to Figure 4 as shown. Figure 4 is a schematic diagram of the relationship between the thickness of the double-sided adhesive member 20 and the temperature of the substrate 2 to be processed. In a preferred embodiment of the present application, the thickness of the double-sided adhesive member 20 can be between 0.05 mm and 0.5 mm, for example: 0.05, 0.1, 0.16, 0.2, 0.3, 0.4, and 0.5 mm, etc. Assuming that the thickness of the double-sided adhesive member 20 is less than 0.05 mm, it will cause the adhesive force of the double-sided adhesive member 20 to decrease, so that the substrate 2 to be processed and the second electrode plate 10 cannot be effectively adhered. On the other hand, if the thickness of the double-sided adhesive member 20 is greater than 0.5 mm, the substrate 2 to be processed will be too far away from the second electrode plate 10, which is not conducive to the heat dissipation of the substrate 2 to be processed, and thus affects the plasma process. Therefore, by making the thickness of the double-sided adhesive member 20 between 0.05 mm and 0.5 mm, the above-mentioned problems can be avoided.
[0038] Please refer to Figure 5A , Figure 5B and Figure 6As shown, in a preferred embodiment of the present application, the double-sided adhesive member 20 includes a first adhesive layer 23, a body layer 24 and a second adhesive layer 25. The first adhesive layer 23 is adjacent to one side of the substrate 2 to be processed, the second adhesive layer 25 is adjacent to one side of the second electrode plate 10, and the body layer 24 is located between the first adhesive layer 23 and the second adhesive layer 25. The adhesive force of the first adhesive layer 23 is greater than the adhesive force of the second adhesive layer 25, and the difference between the adhesive force of the first adhesive layer 23 and the adhesive force of the second adhesive layer 25 can be greater than 0.3 kg / inch. The present application achieves a greater adhesive force difference between the first adhesive layer 23 and the second adhesive layer 25, so that when the substrate 2 to be processed is separated from the second electrode plate 10, the first adhesive layer 23 with a larger adhesive force coefficient will still adhere to the substrate 2 to be processed, while the second adhesive layer 25 with a smaller adhesive force coefficient will be separated from the second electrode plate 10, thereby achieving the purpose of the double-sided adhesive component 20 staying on the substrate 2 to be processed.
[0039] In a preferred embodiment of the present application, the main body layer 24 can be made of a high-temperature resistant polyimide film. Due to the high-temperature resistant property of the main body layer 24, it is not easy for the material to change due to thermal factors.
[0040] Please refer to Fig. 7A , Figure 7B As shown, in another embodiment of the present application, the second electrode plate 10 may include a low-adhesion surface 26 adjacent to the double-sided adhesive member 20, and the adhesion of the first adhesive layer 23 and the second adhesive layer 25 in the double-sided adhesive member 20 may be set to be the same, so as to achieve the purpose of the adhesion of the double-sided adhesive member 20 adjacent to the substrate 2 to be processed being greater than the adhesion of the double-sided adhesive member 20 adjacent to the second electrode plate 10. The low-adhesion surface 26 may be modified on the surface of the second electrode plate 10 so that the adhesion of the side of the double-sided adhesive member 20 in contact with the second electrode plate 10 is less than the adhesion of the side of the substrate 2 to be processed in contact with the double-sided adhesive member 20; or the surface of the second electrode plate 10 may be coated to form the low-adhesion surface 26 on the second electrode plate 10.
[0041] In one embodiment of the present application, a limiting unit 30 is further included, which is disposed on a side of the second electrode plate 10 adjacent to the first electrode 3, and the substrate to be processed 2 is clamped between the limiting unit 30 and the second electrode plate 10. The limiting unit 30 is in the shape of a frame with a hollow middle, and clamps and fixes the outer periphery of the substrate to be processed 2. The outer periphery of the substrate to be processed 2 is pressurized by the limiting unit 30 to further prevent the substrate to be processed 2 from being warped due to heat.
[0042] See also FIG. 8A to FIG. 11BAs shown, in a preferred embodiment of the present application, the second electrode plate 10 further includes a separation unit 11, and the separation unit 11 is adjacent to the substrate to be processed 2 to separate the substrate to be processed 2 and the second electrode plate 10. Among them, the present application provides the following embodiments to illustrate the feasibility of the separation unit 11: 1. Please refer to Fig. 8A , Figure 8B , Figure 8C As shown, the separation unit 11 may include a gas injection channel 111 and a gas seal 112 arranged corresponding to the exposed area 2b. The gas seal 112 is arranged between the substrate 2 to be processed and the second electrode plate 10, and surrounds the gas injection channel 111 and the substrate 2 to be processed, thereby forming a closed space 5 between the substrate 2 to be processed and the second electrode plate 10. The gas injection channel 111 forces the substrate 2 to be processed to be separated from the second electrode plate 10 by inputting gas into the closed space 5.
[0043] 2. Please refer to FIG. 9A to FIG. 11B As shown, the separation unit 11 may include a plurality of corresponding exposed areas 2b (shown in Figure 2 and Figure 3 ) are provided as metal pillars 113 spaced apart from each other. These metal pillars 113 can move between the substrate 2 to be processed and the second electrode plate 10. These metal pillars 113 push the substrate 2 to be processed to separate the substrate 2 to be processed and the second electrode plate 10. In this embodiment, metal pillars are used to avoid the problem of plasma interference during the plasma process. In addition, the number of these metal pillars 113 can be adjusted according to the actual implementation situation. For example, Fig. 9A , Fig. 9B , Fig. 10A and Fig. 10B As shown, a relatively large number of metal pillars 113 are disposed on the second electrode plate 10 to push up the substrate 2 to be processed, so as to evenly distribute the single-point pressure of pushing up the substrate 2 to be processed. Fig.11A , Fig. 11B As shown, the spacing distance between the metal pillars 113 is relatively long, which can reduce the complexity of actually setting the circuit of the second electrode plate 10 .
[0044] See also Fig.12 As shown, in another embodiment of the present application, the present application provides a carrier pasting method for a plasma process system, which performs a plasma process on a substrate 2 to be processed in a vacuum plasma process chamber 1. A first electrode 3 is provided in the vacuum plasma process chamber 1. The carrier pasting method includes the following steps.
[0045] Step S1 : providing a double-sided adhesive member 20 , wherein the double-sided adhesive member 20 comprises a first adhesive layer 23 and a second adhesive layer 25 .
[0046] Step S2: The first adhesive layer 23 is disposed on one side of the substrate 2 to be processed and the second adhesive layer 25 is disposed on one side of a second electrode plate 10 to fix the substrate 2 to be processed and perform a plasma process, and the adhesive force between the substrate 2 to be processed and the first adhesive layer 23 is greater than the adhesive force between the second electrode plate 10 and the second adhesive layer 25. In a preferred embodiment of the present application, the difference between the adhesive force of the first adhesive layer 23 and the adhesive force of the second adhesive layer 25 is greater than 0.3 kg / inch.
[0047] Step S3: Separate the substrate 2 to be processed from the second electrode plate 10. In a preferred embodiment of the present application, in step S3: the second electrode plate 10 provides a low-adhesion surface 26 adjacent to the second adhesive layer 25, so that when the substrate 2 to be processed is separated from the second electrode plate 10, the double-sided adhesive member 20 stays on the substrate 2 to be processed.
[0048] In a preferred embodiment of the present application, in step S3: a separation unit 11 adjacent to the substrate 2 to be processed is provided through the second electrode plate 10 to separate the substrate 2 to be processed from the second electrode plate 10. The separation unit 11 provides a gas injection channel 111 corresponding to the multiple exposed areas 2b of the substrate 2 to be processed and a gas seal 112 provided between the substrate 2 to be processed and the second electrode plate 10. The gas seal 112 surrounds the gas injection channel 111 and the substrate 2 to be processed, and forms a closed space 5 between the substrate 2 to be processed and the second electrode plate 10. Gas is input into the closed space 5 through the gas injection channel 111 to force the substrate 2 to be processed and the second electrode plate 10 to be separated. In another embodiment, the separation unit 11 provides a plurality of metal columns 113 spaced apart corresponding to the plurality of exposed areas 2b of the substrate 2 to be processed. These metal columns 113 can move between the substrate 2 to be processed and the second electrode plate 10. The substrate 2 to be processed is pushed by these metal columns 113 to separate the substrate 2 to be processed and the second electrode plate 10.
[0049] Step S4: Separate the double-sided adhesive piece 20 from the substrate 2 to be processed. The separation unit 11 may include a robot arm to move the substrate 2 to be processed after being separated from the double-sided adhesive piece 20.
[0050] Based on the above technical features, this application has the following characteristics: 1. The present application utilizes the high adhesive force of the double-sided adhesive member 20 to adhere and position the substrate 2 to be processed on the second electrode plate 10 to prevent the substrate 2 to be processed from warping due to thermal factors during the plasma process.
[0051] 2. The present application can prevent the substrate 2 from being displaced by disposing the double-sided adhesive member 20 between the substrate 2 to be processed and the second electrode plate 10, thereby avoiding the problem of inaccurate alignment in subsequent processes.
[0052] 3. The adhesive force of the double-sided adhesive 20 adjacent to the side of the substrate to be processed 2 is greater than the adhesive force of the double-sided adhesive 20 adjacent to the second electrode plate 10, so that when the substrate to be processed 2 is separated from the second electrode plate 10, the double-sided adhesive 20 can stay on the substrate to be processed 2 to prevent the problem of being too tightly adhered and unable to be separated.
[0053] 4. The thickness of the double-sided adhesive member 20 of the present application is between 0.05 mm and 0.5 mm. In addition to not affecting the heat dissipation effect of the substrate 2 to be processed and having a better cooling effect, it can also take into account high adhesion.
[0054] 5. In the present application, these double-sided adhesive members 20 are arranged at intervals on the surface of the substrate 2 to be processed. In this way, the area of the double-sided adhesive members 20 adhered to the surface of the substrate 2 to be processed can be reduced, thereby reducing the cost of the double-sided adhesive members 20.
[0055] The aforementioned effects do not prevent the existence of other effects. If a person skilled in the art can derive effects from the description, claims, or drawings, the effects are also included in the effects of the present application. Therefore, the effects of the present application are not limited to the aforementioned effects.
[0056] The above embodiments are only used to illustrate the present application, and are not used to limit the scope of the present application. Any modifications or changes that do not violate the spirit of the present application are within the scope of protection intended by the present application.
Claims
1. A carrier pasting mechanism of a plasma process system, which is arranged in a vacuum plasma process chamber and is used to perform a plasma process on a substrate to be processed, wherein a first electrode is arranged in the vacuum plasma process chamber, and is characterized in that: The carrier pasting mechanism comprises: a second electrode plate disposed corresponding to the first electrode, wherein a plasma process space is formed between the second electrode plate and the first electrode; and A double-sided adhesive piece is arranged between the substrate to be processed and the second electrode plate. The adhesive force of the double-sided adhesive piece adjacent to the substrate to be processed is greater than the adhesive force of the double-sided adhesive piece adjacent to the second electrode plate, so that when the substrate to be processed is separated from the second electrode plate, the double-sided adhesive piece stays on the substrate to be processed.
2. The carrier pasting mechanism of the plasma process system according to claim 1, characterized in that: The double-sided adhesive component includes a first adhesive layer adjacent to one side of the substrate to be processed, a second adhesive layer adjacent to one side of the second electrode plate, and a main body layer located between the first adhesive layer and the second adhesive layer. The adhesive force of the first adhesive layer is greater than the adhesive force of the second adhesive layer, and the difference between the adhesive force of the first adhesive layer and the adhesive force of the second adhesive layer is greater than 0.3 kg / inch.
3. The carrier pasting mechanism of the plasma process system according to claim 1, wherein: The second electrode plate also includes a low-adhesion surface adjacent to the double-sided adhesive member.
4. The carrier pasting mechanism of the plasma process system according to claim 1, wherein: The adhesive force of the double-sided adhesive piece is between 0.05kg / inch and 1kg / inch.
5. The carrier pasting mechanism of the plasma process system according to claim 1, wherein: The thickness of the double-sided adhesive piece is between 0.05 mm and 0.5 mm.
6. The carrier pasting mechanism of the plasma process system according to claim 1, wherein: There are multiple double-sided adhesive members, which are arranged at intervals and formed on the surface of the substrate to be processed. The substrate to be processed has multiple adhesive areas to be adhered to the double-sided adhesive members and multiple exposed areas outside the adhesive areas.
7. The carrier pasting mechanism of the plasma process system according to claim 6, wherein: The sticking areas and the exposed areas are in the shape of long strips and are arranged in strips on the surface of the substrate to be processed.
8. The carrier pasting mechanism of the plasma process system according to claim 6, wherein: The exposed areas are arranged in a field shape on the surface of the substrate to be processed.
9. The carrier pasting mechanism of the plasma process system according to claim 6, wherein: The second electrode plate further comprises a separation unit, which is adjacent to the substrate to be processed and is used to separate the substrate to be processed from the second electrode plate.
10. The carrier pasting mechanism of the plasma process system according to claim 9, wherein: The separation unit includes a gas injection channel and a gas seal arranged corresponding to the exposed area. The gas seal is arranged between the substrate to be processed and the second electrode plate, and surrounds the gas injection channel and the substrate to be processed to form a closed space between the substrate to be processed and the second electrode plate. The gas injection channel inputs gas into the closed space to force the substrate to be processed to separate from the second electrode plate.
11. The carrier pasting mechanism of the plasma process system according to claim 9, wherein: The separation unit includes a plurality of metal columns spaced apart corresponding to the exposed area. The metal columns can move between the substrate to be processed and the second electrode plate. The metal columns push the substrate to be processed to separate the substrate to be processed and the second electrode plate.
12. A carrier pasting method for a plasma process system, wherein a substrate to be processed in a vacuum plasma process chamber is subjected to a plasma process, wherein a first electrode is disposed in the vacuum plasma process chamber, and wherein: The carrier pasting method comprises the following steps: Step S1: providing a double-sided adhesive member, the double-sided adhesive member comprising a first adhesive layer and a second adhesive layer; Step S2: disposing the first adhesive layer on one side of the substrate to be processed and the second adhesive layer on one side of a second electrode plate to fix the substrate to be processed and perform a plasma process, and the adhesive force between the substrate to be processed and the first adhesive layer is greater than the adhesive force between the second electrode plate and the second adhesive layer; Step S3: separating the substrate to be processed from the second electrode plate; and Step S4: separating the double-sided adhesive piece from the substrate to be processed.
13. The carrier pasting method of the plasma process system according to claim 12, wherein: In the step S2 , the difference between the adhesive force of the first adhesive layer and the adhesive force of the second adhesive layer is greater than 0.3 kg / inch.
14. The carrier pasting method of the plasma process system according to claim 12, wherein: In the step S3: a low-adhesion surface adjacent to the second adhesive layer is provided by the second electrode plate, so that when the substrate to be processed is separated from the second electrode plate, the double-sided adhesive member stays on the substrate to be processed.
15. The carrier pasting method of the plasma process system according to claim 12, wherein: In the step S3: a separation unit adjacent to the substrate to be processed is provided through the second electrode plate to separate the substrate to be processed and the second electrode plate.
16. The carrier pasting method of the plasma process system according to claim 15, characterized in that: In step S3: the separation unit provides a gas injection channel corresponding to the multiple exposed areas of the substrate to be processed and a gas seal disposed between the substrate to be processed and the second electrode plate, the gas seal surrounds the gas injection channel and the substrate to be processed, and forms a closed space between the substrate to be processed and the second electrode plate, and gas is input into the closed space through the gas injection channel to force the substrate to be processed and the second electrode plate to be separated.
17. The carrier pasting method of the plasma process system according to claim 15, characterized in that: In step S3: the separation unit provides a plurality of metal columns spaced apart corresponding to the plurality of exposed areas of the substrate to be processed, and these metal columns can move between the substrate to be processed and the second electrode plate, and the substrate to be processed is pushed up by these metal columns to separate the substrate to be processed and the second electrode plate.