Base material processing system and semiconductor coating equipment

Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a base material processing system which comprises a reaction cavity, an air inlet and an air outlet are formed in the cavity wall of the reaction cavity, the air inlet is located in the side of a to-be-cleaned area, and the base material processing system further comprises an air conveying structure and an air exhaust structure. The gas transmission structure comprises a first gas transmission end and a second gas transmission end which can switch gas transmission; wherein the first gas transmission end is used for being communicated with a gas inlet of a reaction cavity; the air exhaust structure is used for being communicated with an air outlet of the reaction cavity, and the second air conveying end of the air conveying structure is communicated with the air exhaust structure; wherein the first gas transmission end can be communicated with the gas inlet of the reaction cavity through switching between the first gas transmission end and the second gas transmission end of the gas transmission structure; or the second gas transmission end is communicated with the gas extraction structure. Therefore, the residue in the reaction cavity can be effectively removed, and the influence on the process reaction is reduced, so that the yield of products is effectively improved. The invention further discloses semiconductor coating equipment.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, for example, to a substrate processing system and a semiconductor coating device. Background Art

[0002] During the manufacturing process of semiconductor products, the semiconductor substrate needs to be subjected to corresponding process treatments, such as etching process treatment, chemical vapor deposition (CVD) process treatment, or plasma enhanced chemical vapor deposition (PECVD) process treatment, etc. In the above process treatments, the residues formed during the deposition process need to be cleaned.

[0003] In the related art, a remote plasma source (RPS) is usually used to generate a cleaning gas, and the cleaning gas is injected into the reaction chamber through a spray device on the top to clean the thin film deposited on the inner wall of the reaction chamber. For example, a vacuum processing system is disclosed in the related art, including a vacuum chamber with an inlet, at least a first and a second outlet, an exhaust device at a first outlet of the outlets, and a remote plasma source, wherein the remote plasma source is attached to a connection point to a second outlet of the outlets.

[0004] In the process of implementing the embodiments of the present disclosure, it is found that there are at least the following problems in the related art:

[0005] Since there is a gap at the connection between the spray device and the exhaust device, and the gap is deep, the residues remaining in the gap may not be cleaned up during the process of injecting cleaning gas into the reaction chamber through the remote plasma source, thereby affecting the process reaction and even the product yield.

[0006] It should be noted that the information disclosed in the above background technology section is only used to enhance the understanding of the background of the present application, and therefore may include information that does not constitute the prior art known to ordinary technicians in the field. Summary of the invention

[0007] In order to provide a basic understanding of some aspects of the disclosed embodiments, a brief summary is given below. The summary is not an extensive review, nor is it intended to identify key / critical elements or delineate the scope of protection of these embodiments, but rather serves as a prelude to the detailed description that follows.

[0008] The embodiments of the present disclosure provide a substrate processing system and a semiconductor coating device, which can effectively remove the residues remaining in the reaction chamber, reduce the impact on the process reaction, and thus effectively improve the yield of the product.

[0009] In some embodiments, the substrate processing system includes a reaction chamber, an air inlet and an air outlet are provided on the chamber wall of the reaction chamber, the air inlet is located on the side of the area to be cleaned, and the substrate processing system includes a gas supply structure and an air extraction structure. The gas supply structure includes a first gas supply end and a second gas supply end that can switch gas supply; wherein the first gas supply end is used to communicate with the air inlet of the reaction chamber; the air extraction structure is used to communicate with the air outlet of the reaction chamber, and the second gas supply end of the gas supply structure is connected to the air extraction structure; wherein, by switching between the first gas supply end and the second gas supply end of the gas supply structure, the first gas supply end can be connected to the air inlet of the reaction chamber; or, the second gas supply end is connected to the air extraction structure.

[0010] Optionally, the gas delivery structure includes: a plasma input component; a diverter element having an inlet end connected to the plasma input component, a first gas delivery end connected to the gas inlet of the reaction chamber, and a second gas delivery end connected to the gas extraction structure; wherein the inlet end can be connected to the first gas delivery end or the second gas delivery end.

[0011] Optionally, the gas delivery structure further includes: a regulating component, which is arranged on the diversion element to adjust the conduction between the gas inlet end and the first gas delivery end or the second gas delivery end.

[0012] Optionally, the second gas delivery end is connected to the gas extraction structure through a gas delivery pipe section; the gas delivery structure also includes: a flow limiting component, which is arranged on the gas delivery pipe section to control the gas flow in the gas delivery pipe section.

[0013] Optionally, the flow limiting assembly includes a flow limiting gasket and / or a flow limiting pipe segment.

[0014] Optionally, the gas extraction structure includes: a gas extraction component; a gas extraction pipeline, a first end of which is connected to the gas extraction component, and a second end of which is used to be connected to the gas inlet of the reaction chamber; wherein the second gas delivery end of the gas delivery structure is connected to the gas extraction pipeline.

[0015] Optionally, the air extraction structure further includes: a flow control element, which is arranged on the air extraction pipeline to control the gas flow in the air extraction pipeline.

[0016] Optionally, the connection point between the second gas delivery end and the gas extraction pipeline is a connection node, and the flow control element is located between the connection node and the gas extraction component; or, the flow control element is located between the connection node and the gas outlet.

[0017] In some embodiments, the semiconductor coating equipment includes a reaction chamber and a substrate processing system as described in the present application; the reaction chamber has an air inlet and an air outlet on the chamber wall; the first gas supply end of the substrate processing system is connected to the air inlet of the reaction chamber, and the exhaust structure of the substrate processing system is connected to the air outlet of the reaction chamber.

[0018] Optionally, a heating device is provided in the reaction chamber, and the air inlet is located on the side of the heating device.

[0019] Optionally, a spray device is provided on the top wall side of the reaction chamber, an exhaust ring is provided on the chamber wall below the spray device, and the gas outlet is provided on the exhaust ring.

[0020] The substrate processing system and semiconductor coating equipment provided by the embodiments of the present disclosure can achieve the following technical effects:

[0021] By switching between the first gas delivery end and the second gas delivery end of the gas delivery structure, the cleaning gas used for cleaning can be directly input into the reaction chamber or into the exhaust structure. In this way, the gas delivery structure can intermittently input the cleaning gas into the reaction chamber, so that the gas pressure inside the reaction chamber changes, promoting the reaction and movement of the cleaning gas with the film in the narrow gap, thereby achieving a better cleaning purpose. On this basis, since the air inlet is located on the side of the area to be cleaned, the distance of the cleaning gas entering the reaction chamber can be shortened to a limited extent, reducing deactivation, thereby increasing the cleaning ability of the cleaning gas, and thus improving the cleaning efficiency.

[0022] In addition, the present application can form a cleaning method of pulsed, non-continuous introduction of cleaning gas. Compared with the cleaning method of continuous introduction of cleaning gas, especially for the cleaning of narrow and deep gaps, after the cleaning gas is introduced to react for a period of time, the reactants and products are extracted, and then the cleaning gas is continued to be introduced. In this way, the products accumulated in the reaction chamber can be reduced, thereby reducing the concentration of the products, and at the same time, the cleaning gas can be promoted to diffuse better to the surface to be etched, thereby improving the diffusion effect of the cleaning gas.

[0023] The above general description and the following description are exemplary and explanatory only and are not intended to limit the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] One or more embodiments are exemplarily described by corresponding drawings, which do not limit the embodiments. Elements with the same reference numerals in the drawings are shown as similar elements, and the drawings do not constitute a scale limitation, and wherein:

[0025] Figure 1 It is a schematic diagram of a semiconductor coating device in the prior art;

[0026] Figure 2 is a schematic diagram of a substrate processing system provided by the present application;

[0027] Figure 3 yes Figure 2 The enlarged schematic diagram of point A in the middle;

[0028] Figure 4 is a schematic diagram of another substrate processing system provided by the present application;

[0029] Figure 5 is a schematic diagram of another substrate processing system provided by the present application;

[0030] Figure 6 It is a gas flow diagram of the first gas delivery end connected to the reaction chamber provided by the present application;

[0031] Figure 7 It is a gas flow diagram of the second gas transmission end connected to the gas extraction structure provided by the present application;

[0032] Figure 8 It is a schematic diagram of a semiconductor coating device provided in this application.

[0033] Reference numerals:

[0034] 1a- spray plate; 1b- exhaust ring; 10- gas delivery structure; 11- plasma input assembly; 12- flow diversion element; 121- gas inlet end; 122- first gas delivery end; 123- second gas delivery end; 124- adjustment assembly; 13- gas delivery pipe section; 14- flow limiting assembly; 141- flow limiting gasket; 142- flow limiting pipe section; 20- exhaust structure; 21- exhaust assembly; 22- exhaust pipeline; 23- flow control element; 24- connection node; 100- reaction chamber; 101- air inlet; 102- air outlet; 103- heating device; 104- spray device. DETAILED DESCRIPTION

[0035] In order to be able to understand the features and technical contents of the embodiments of the present disclosure in more detail, the implementation of the embodiments of the present disclosure is described in detail below in conjunction with the accompanying drawings. The attached drawings are for reference only and are not used to limit the embodiments of the present disclosure. In the following technical description, for the convenience of explanation, a full understanding of the disclosed embodiments is provided through multiple details. However, one or more embodiments can still be implemented without these details. In other cases, to simplify the drawings, well-known structures and devices can be simplified for display.

[0036] The terms "first", "second", etc. in the specification and claims of the embodiments of the present disclosure and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchanged where appropriate, so as to describe the embodiments of the embodiments of the present disclosure described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions.

[0037] In the embodiments of the present disclosure, the terms "upper", "lower", "inside", "middle", "outside", "front", "back" and the like indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. These terms are mainly intended to better describe the embodiments of the present disclosure and their embodiments, and are not intended to limit the indicated devices, elements or components to have a specific direction, or to be constructed and operated in a specific direction. Moreover, in addition to being used to indicate directions or positional relationships, some of the above terms may also be used to indicate other meanings. For example, the term "upper" may also be used to indicate a certain dependency or connection relationship in certain circumstances. For those of ordinary skill in the art, the specific meanings of these terms in the embodiments of the present disclosure can be understood according to specific circumstances.

[0038] In addition, the terms "disposed", "connected", and "fixed" should be understood in a broad sense. For example, "connected" can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to specific circumstances.

[0039] Unless otherwise stated, the term "plurality" means two or more.

[0040] In the embodiment of the present disclosure, the character " / " indicates that the preceding and following objects are in an "or" relationship. For example, A / B indicates: A or B.

[0041] The term "and / or" is a description of the association relationship between objects, indicating that three relationships can exist. For example, A and / or B means: A or B, or, A and B.

[0042] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present disclosure may be combined with each other.

[0043] In the related art, the structure of the existing semiconductor coating equipment is as follows Figure 1 As shown, a shower plate 1a is arranged on the top of the reaction chamber, and a pumping ring 1b is arranged on the wall of the reaction chamber. After the semiconductor film deposition reaction, the RPS is used to generate cleaning gas to clean the film deposited on the inner wall of the reaction chamber.

[0044] Specifically, the cleaning gas generated by the RPS is introduced from the top of the reaction chamber and enters the reaction chamber through the through hole of the spray plate 1a, wherein there is a gap at the position where the spray plate 1a and the pumping ring 1b are assembled, and the gap is a space reserved for thermal expansion and contraction to ensure the normal use of the spray plate 1a and the pumping ring 1b. However, since the reserved space is narrow and deep, and before the cleaning gas reaches the gap, the ions in the cleaning gas will collide and recombine and be lost, so that the cleaning gas may have lost its cleaning ability before reaching the gap, resulting in the difficulty in completely cleaning the residual film in the gap.

[0045] In order to overcome the above technical problems, the present disclosure provides a substrate processing system, which further improves the cleaning ability by changing the way of introducing the cleaning gas. Figure 2 As shown, the embodiment of the present disclosure provides a substrate processing system, including a reaction chamber 100, an air inlet 101 and an air outlet 102 are arranged on the chamber wall of the reaction chamber 100, and the air inlet 101 is located on the side of the area to be cleaned. The substrate processing system also includes a gas supply structure 10 and a gas extraction structure 20. The gas supply structure 10 includes a first gas supply end 122 and a second gas supply end 123 that can switch gas supply; wherein the first gas supply end 122 is used to communicate with the gas inlet 101 of the reaction chamber 100; the gas extraction structure 20 is used to communicate with the gas outlet 102 of the reaction chamber 100, and the second gas supply end 123 of the gas supply structure 10 is connected to the gas extraction structure 20; wherein, by switching between the first gas supply end 122 and the second gas supply end 123 of the gas supply structure 10, the first gas supply end 122 can be connected to the gas inlet 101 of the reaction chamber 100; or, the second gas supply end 123 is connected to the gas extraction structure 20.

[0046] By using the substrate processing system provided by the embodiment of the present disclosure, the cleaning gas used for cleaning can be directly input into the reaction chamber or into the exhaust structure by switching between the first gas supply end and the second gas supply end of the gas supply structure. In this way, the gas supply structure can intermittently input the cleaning gas into the reaction chamber, so that the air pressure inside the reaction chamber changes, and promotes the reaction and movement of the cleaning gas with the film in the narrow gap, so as to achieve a better cleaning purpose. On this basis, since the air inlet 101 is located on the side of the area to be cleaned, the travel of the cleaning gas entering the reaction chamber can be limitedly shortened, reducing deactivation, thereby increasing the cleaning ability of the cleaning gas, and thus improving the cleaning efficiency.

[0047] In addition, the present application can form a cleaning method of pulsed, non-continuous introduction of cleaning gas. Compared with the cleaning method of continuous introduction of cleaning gas (i.e. continuous introduction of cleaning gas without repeated cleaning and exhaustion operations), it is particularly suitable for cleaning the narrow and deep gaps described above. After the cleaning gas is introduced to react for a period of time, the reactants and products are extracted, and the cleaning gas is continued to be introduced. This can reduce the products accumulated in the reaction chamber, thereby reducing the concentration of the products, and at the same time promote better diffusion of the cleaning gas to the surface to be etched, thereby improving the diffusion effect of the cleaning gas.

[0048] Optionally, the reaction chamber 100 of the present application is suitable for filling with process gas or source for process treatment. In addition, the reaction chamber 100 can also be passed with a cleaning gas to perform chamber cleaning. According to an embodiment provided in the present disclosure, the microelectronic process equipment can be an etching equipment (ETCH), a chemical vapor deposition equipment (CVD) or an atomic layer deposition equipment (ALD), etc.

[0049] However, it should be noted that the microelectronic process equipment of the present application is not limited thereto, and may also include but is not limited to a factory interface, a load lock chamber, a transfer chamber, and at least one process chamber. Here, the process chamber has two or more process areas separated from each other. After reading the following technical solution, it is obvious that ordinary technicians can apply it to other process equipment.

[0050] Optionally, the substrate processing system of the present application includes a gas delivery structure 10 and a gas extraction structure 20. The gas delivery structure 10 can deliver gas to the reaction chamber 100, so that the cleaning gas (plasma) reacts with the film and the corresponding residues in the reaction chamber 100, and the gas extraction structure 20 can extract the reactants in the reaction chamber 100. In this way, the efficiency of cleaning the reaction chamber is improved.

[0051] Optionally, the gas delivery structure 10 of the present application includes a first gas delivery end 122 and a second gas delivery end 123 for switchable gas delivery. The first gas delivery end 122 is used to communicate with the gas inlet 101 of the reaction chamber 100, and the second gas delivery end 123 of the gas delivery structure 10 is communicated with the gas extraction structure 20. In this way, the gas delivery structure 10 can be controlled to deliver gas to the reaction chamber 100, or the gas of the gas delivery structure 10 can flow to the gas extraction structure 20.

[0052] Specifically, when the gas delivery structure 10 is switched to the first gas delivery end 122 for gas delivery, the second gas delivery end 123 is in a closed state; when the gas delivery structure 10 is switched to the second gas delivery end 123 for gas delivery, the first gas delivery end 122 is in a closed state. In this way, by switching the states of the first gas delivery end 122 and the second gas delivery end 123, it is possible to ensure that the gas is delivered to the reaction chamber 100 at intervals.

[0053] Optionally, the present application has multiple gas inlets 102, and the multiple gas inlets 102 are respectively arranged at different positions on the wall of the reaction chamber 100. In this way, the clean gas can be better diverted, and the clean gas can be directly introduced from different positions of the wall of the reaction chamber 100, reducing the loss of ion collision recombination in the clean gas, thereby improving the cleaning efficiency of the reaction chamber 100.

[0054] Optionally, since the gas inlet 101 is located on the side of the area to be cleaned, in order to further improve the gas delivery efficiency, the gas delivery structure 10 is located on the side of the gas inlet 101. In this way, the gas path between the gas delivery structure 10 and the gas inlet 101 can be effectively shortened, so that the cleaning gas can quickly enter the reaction chamber 100.

[0055] Optionally, combined Figure 2 and Figure 3 As shown, the gas delivery structure 10 of the present application includes a plasma input component 11, a diverter element 12, a gas inlet end 121 connected to the plasma input component 11, a first gas delivery end 122 for connecting to the gas inlet 101 of the reaction chamber 100, and a second gas delivery end 123 connected to the gas extraction structure 20; wherein the gas inlet end 121 can be connected to the first gas delivery end 122 or the second gas delivery end 123.

[0056] In one embodiment of the present application, the present application generates a cleaning gas through a plasma input component 11, and then controls the flow of the cleaning gas through a flow diversion element 12, so that the first gas delivery end 122 delivers gas to the reaction chamber 100, or the second gas delivery end 123 delivers gas to the gas extraction structure 20. Here, since the plasma input component 11 continuously generates the cleaning gas, it is necessary to control the gas outlet end of the plasma input component 11 to achieve intermittent gas delivery to the reaction chamber 100.

[0057] In one embodiment of the present application, a remote plasma source RPS is provided on the top of the reaction chamber 100. In this way, when used in conjunction with an additional ion input assembly 11 installed on the chamber wall, the reaction chamber can be cleaned from different angles and the gas pressure in the reaction chamber can be ensured.

[0058] Optionally, the plasma input component 11 of the present application is a remote plasma source RPS, wherein when the gas inlet end 121 of the diverter element 12 is connected to the first gas supply end 122 , the cleaning gas of the remote plasma source RPS can enter the reaction chamber 100 .

[0059] Specifically, before the remote plasma source RPS supplies gas to the reaction chamber 100, it is necessary to evacuate gas through the exhaust structure 20 to control the gas pressure in the reaction chamber 100 at the first target gas pressure; turn on the remote plasma source RPS and input inert gas through the first gas supply terminal 122 to ensure that the gas pressure in the reaction chamber 100 is controlled at the second target gas pressure; then input clean gas into the remote plasma source RPS to ensure that the gas pressure in the reaction chamber 100 is controlled at the second target gas pressure.

[0060] In one embodiment of the present application, after the cleaning gas is input for a first preset time, the gas inlet end 121 and the first gas delivery end 122 are controlled to be closed, and the gas inlet end 121 and the second gas delivery end 123 are connected; since the gas extraction structure 20 is pumping gas at this time, when the gas pressure in the reaction chamber 100 is at the first target gas pressure, the gas inlet end 121 and the first gas delivery end 122 are controlled to be connected, and the gas inlet end 121 and the second gas delivery end 123 are closed. In this way, the above operation is repeated many times to form a pulsed, non-continuous introduction of the cleaning gas.

[0061] Optionally, combined Figure 3 As shown, the gas delivery structure of the present application further includes a regulating component 124, which is disposed on the diverter element 12 to regulate the conduction between the gas inlet end 121 and the first gas delivery end 122 or the second gas delivery end 123. In this way, it is convenient to control the switching between the first gas delivery end 122 and the second gas delivery end 123.

[0062] In one embodiment of the present application, the diverter element 12 may be a three-way solenoid valve, and the air inlet end 121 may be connected to the first air delivery end 122 or the second air delivery end 123 by controlling the on-off of each passage of the three-way solenoid valve.

[0063] Optionally, combined Figure 4 and Figure 5 As shown, the second gas delivery end 123 of the present application is connected to the gas extraction structure 20 through the gas delivery pipe section 13; the gas delivery structure 10 also includes: a flow limiting component 14, which is arranged on the gas delivery pipe section 13 to control the gas flow in the gas delivery pipe section 13.

[0064] In one embodiment of the present application, when the gas delivery structure 10 is connected to the gas extraction structure 20 through the second gas delivery end 123, in order to ensure that both the gas delivery structure 10 and the gas extraction structure 20 can operate stably, the second gas delivery end 123 is connected to the gas extraction structure 20 through the gas delivery pipe section 13, and a flow limiting component 14 is provided on the gas delivery pipe section 13, and the flow limiting component 14 controls the airflow flowing through the gas delivery pipe section 13, thereby ensuring that the plasma input component 11 is always at a stable working pressure, avoiding the gas extraction structure 20 affecting the operation of the plasma input component 11, or the plasma input component 11 affecting the operation of the gas extraction structure 20.

[0065] Optionally, combined Figure 4 and Figure 5 As shown, the flow limiting assembly 14 of the present application includes a flow limiting gasket 141 and / or a flow limiting pipe section 142 .

[0066] Optionally, combined Figure 4 As shown, the flow limiting component 14 includes a flow limiting gasket 141 , so that the gas flow in the gas transmission pipe section 13 can be effectively controlled by controlling the opening of the flow limiting gasket 141 .

[0067] Optionally, combined Figure 5 As shown, the flow limiting component 14 includes a flow limiting pipe section 142 , wherein the cross-sectional area of ​​the flow limiting pipe section 142 is smaller than the cross-sectional area of ​​the gas pipeline section 13 , thus effectively reducing the gas flow in the gas pipeline section 13 .

[0068] Optionally, when the flow limiting assembly 14 includes a flow limiting gasket 141 and a flow limiting pipe section 142 , the flow limiting pipe section 142 is disposed on the gas delivery pipe section 13 , and the flow limiting gasket 141 is disposed on the flow limiting pipe section 142 .

[0069] Combination Figure 4 or Figure 5 As shown, the gas extraction structure 20 of the present application includes: a gas extraction component 21; a gas extraction pipeline 22, the first end of which is connected to the gas extraction component 21, and the second end is used to communicate with the gas outlet 102 of the reaction chamber 100; wherein the second gas delivery end 123 of the gas delivery structure 10 is connected to the gas extraction pipeline 22. In this way, through the coordinated use of the gas extraction component 21 and the gas extraction pipeline 22, both the gas in the reaction chamber 100 and the gas delivered by the gas delivery structure 10 can be extracted.

[0070] In one embodiment of the present application, a pumping ring is provided on the reaction chamber 100 of the present application, a gas outlet 102 is provided on the pumping ring, a first end of a pumping line 22 is communicated with a pumping assembly 21, and a second end of the pumping line 22 is communicated with the gas outlet 102 of the reaction chamber 100. In this way, the gas in the reaction chamber 100 can be pumped out through the pumping ring, and here, the pumping assembly 21 can be a pumping assembly or a vacuum pump, etc.

[0071] In one embodiment of the present application, when the gas delivery structure 10 of the present application is connected to the gas extraction structure 20 , the second gas delivery end 123 of the plasma input component 11 can be connected to the gas extraction pipeline 22 through the gas delivery pipeline 13 .

[0072] In one embodiment of the present application, the second end of the exhaust pipeline 22 of the present application has a first exhaust port and a second exhaust port; wherein the first exhaust port of the exhaust pipeline 22 is connected to the gas outlet 102 of the reaction chamber 100; the second exhaust port of the exhaust pipeline 22 is connected to the second gas supply end 123 of the plasma input component 11; in this way, the exhaust component 21 can simultaneously extract gas from the reaction chamber 100 and the second gas supply end 123 through the exhaust pipeline 22.

[0073] Optionally, combined Figure 4 or Figure 5 As shown, the gas extraction structure 20 of the present application further includes a flow control element 23, which is disposed on the gas extraction pipeline 22 to control the gas flow in the gas extraction pipeline 22. In this way, the gas pressure in the reaction chamber 100 can be effectively controlled, and the working pressure of the plasma input assembly 11 can be ensured.

[0074] In one embodiment of the present application, before the gas delivery structure 10 delivers gas to the reaction chamber 100, it is necessary to evacuate gas through the gas extraction structure 20. Therefore, the opening of the flow control element 23 can be appropriately increased to increase the gas flow rate, so as to quickly control the gas pressure in the reaction chamber 100 to the first target pressure; to ensure that the gas pressure in the reaction chamber 100 is controlled at the second target pressure, the opening of the flow control element 23 can be appropriately reduced to reduce the gas flow rate. The reaction chamber 100 is maintained at a constant pressure.

[0075] Optionally, the flow control element 23 of the present application may be a solenoid valve.

[0076] Optionally, combined Figure 4 or Figure 5 As shown, the connection point between the second gas delivery end 123 of the present application and the air extraction pipeline 22 is a connection node 24, and the flow control element 23 is located between the connection node and the air extraction component 21; or, the flow control element 23 is located between the connection node and the air outlet 102.

[0077] In one embodiment of the present application, the present application can control the gas flow rate of the gas extraction component 21 from the reaction chamber 100 side and the gas delivery structure 10 side according to the flow control element 23 arranged at the position of the gas extraction pipeline 22. Optionally, in the case where the flow control element 23 is located between the connection node and the gas extraction component 21, the flow control element 23 can simultaneously control the gas flow rate flowing in from the reaction chamber 100 side and the gas delivery structure 10 side. Optionally, in the case where the flow control element 23 is located between the connection node and the gas outlet 102, the flow control element 23 can control the gas flow rate flowing in from the reaction chamber 100 side.

[0078] In combination with the above embodiments, the above structures can effectively improve the efficiency of cleaning the reaction chamber.

[0079] In some specific embodiments, before the cleaning gas is introduced into the reaction chamber 100, the exhaust assembly 21 exhausts the reaction chamber 100 to a first target pressure (eg, 0.1 Pa). Figure 6 As shown, the inlet end 121 of the flow divider element 12 is controlled to be connected to the first gas supply end 122, and an inert gas is introduced. At the same time, the opening of the flow control element 23 is controlled to maintain the pressure in the reaction chamber 100 at the working pressure of the plasma input component 11 (for example, 3Pa), and then a cleaning gas is introduced to maintain the pressure of 3Pa. In this process, the inner wall of the reaction chamber 100 is cleaned for a first preset cleaning time (for example, 10s). Figure 7 As shown, the air inlet end 121 of the control diverter element 12 is connected to the second air supply end 123, and the flow control element 23 is controlled to extract the clean gas in the reaction chamber 100. The air is extracted for a first preset time (for example, 1S), at which time the first target gas pressure is obtained. The above operation is repeated until the residue in the reaction chamber 100 is cleaned up.

[0080] Combination Figure 8 As shown, the embodiment of the present disclosure also provides a semiconductor coating device, including a reaction chamber 100 and a substrate processing system as described in the present application; the reaction chamber 100 has an air inlet 101 and an air outlet 102 arranged on the chamber wall; the first gas supply end 122 of the substrate processing system is connected to the air inlet 101 of the reaction chamber 100, and the gas extraction structure 20 is connected to the air outlet 102 of the reaction chamber 100.

[0081] In one embodiment of the present application, the semiconductor coating equipment includes the above-mentioned substrate processing system. Referring to the above-mentioned embodiment, it at least has the beneficial effects brought by the technical solutions of the above-mentioned embodiments, which will not be described one by one here.

[0082] In addition, semiconductor coating equipment includes but is not limited to etching equipment, chemical vapor deposition equipment or atomic layer deposition equipment.

[0083] Combination Figure 8 As shown, a heating device 103 is disposed in the reaction chamber 100 of the present application, and an air inlet 101 is located on the side of the heating device 103 .

[0084] In one embodiment of the present application, the heating device 103 is a heating plate, and the air inlet 101 is arranged on the side of the heating device 103, so that the cleaning gas of the substrate processing system can be directly and quickly input into the reaction chamber 100, thereby shortening the distance between the plasma in the cleaning gas and the film contact reaction and improving the cleaning efficiency.

[0085] Combination Figure 8As shown, a spray device 104 is provided on the top wall side of the reaction chamber 100 of the present application, an air pumping ring 103 is provided on the chamber wall below the spray device 104, a gas outlet 102 is provided on the air pumping ring 103, and a gas inlet 101 is provided on the side wall of the reaction chamber 100. Here, the positions of the air pumping ring 103 and the spray device 104 are both higher than the position of the gas inlet 101, and under the action of the suction force of the gas outlet 102, the clean gas entering from the gas inlet 101 side can also quickly move toward the gas outlet 102 side, and then can react with the thin film deposited in the gap between the air pumping ring 103 and the spray device 104, so as to remove the thin film in the gap, thereby improving the equipment production capacity and process stability.

[0086] The above description and the accompanying drawings sufficiently illustrate the embodiments of the present disclosure to enable those skilled in the art to practice them. Other embodiments may include structural and other changes. The embodiments represent only possible variations. Unless explicitly required, individual components and functions are optional, and the order of operations may vary. Portions and features of some embodiments may be included in or replace portions and features of other embodiments. The embodiments of the present disclosure are not limited to the structures described above and shown in the accompanying drawings, and various modifications and changes may be made without departing from the scope thereof. The scope of the present disclosure is limited only by the appended claims.

Claims

1. A substrate processing system, characterized in that: The system comprises a reaction chamber, wherein an air inlet and an air outlet are arranged on the chamber wall of the reaction chamber, wherein the air inlet is located on the side of the area to be cleaned, and the substrate processing system further comprises: A gas delivery structure, comprising a first gas delivery end and a second gas delivery end capable of switching gas delivery; wherein the first gas delivery end is used to communicate with the gas inlet of the reaction chamber; An air extraction structure, used to communicate with the air outlet of the reaction chamber, and the second air delivery end of the air delivery structure is communicated with the air extraction structure; By switching between the first gas delivery end and the second gas delivery end of the gas delivery structure, the first gas delivery end can be connected to the gas inlet of the reaction chamber; or the second gas delivery end is connected to the gas extraction structure.

2. The substrate processing system according to claim 1, characterized in that: The gas transmission structure comprises: Plasma input assembly; The flow dividing element has an air inlet end connected to the plasma input component, a first air delivery end for connecting to the air inlet of the reaction chamber, and a second air delivery end connected to the air pumping structure; wherein the air inlet end can be connected to the first air delivery end or the second air delivery end.

3. The substrate processing system according to claim 2, characterized in that: The second gas delivery end is connected to the gas extraction structure through a gas delivery pipe section; the gas delivery structure also includes: The flow limiting component is arranged on the gas pipeline section to control the gas flow in the gas pipeline section.

4. The substrate processing system according to claim 3, characterized in that: The flow limiting component includes a flow limiting gasket and / or a flow limiting pipe section.

5. The substrate processing system according to any one of claims 1 to 4, characterized in that: The air extraction structure comprises: Air extraction components; An air extraction pipeline, a first end of which is connected to the air extraction component, and a second end of which is used to be connected to the air outlet of the reaction chamber; Wherein, the second gas delivery end of the gas delivery structure is connected to the gas extraction pipeline.

6. The substrate processing system according to claim 5, characterized in that: The air extraction structure also includes: The flow control element is arranged on the air extraction pipeline to control the gas flow in the air extraction pipeline.

7. The substrate processing system according to claim 6, characterized in that: The connection point between the second gas transmission end and the gas extraction pipeline is a connection node, and the flow control element is located between the connection node and the gas extraction component; or, the flow control element is located between the connection node and the gas outlet.

8. A semiconductor coating device, characterized in that: include: A reaction chamber, wherein an air inlet and an air outlet are arranged on the chamber wall; According to any one of claims 1 to 7, the first gas supply end of the substrate processing system is connected to the gas inlet of the reaction chamber, and the gas extraction structure of the substrate processing system is connected to the gas outlet of the reaction chamber.

9. The semiconductor coating equipment according to claim 8, characterized in that: A heating device is arranged in the reaction chamber, and the air inlet is located at the side of the heating device.

10. The semiconductor coating device according to claim 8, characterized in that: A spray device is arranged on the top wall side of the reaction chamber, an air pumping ring is arranged on the chamber wall below the spray device, and the air outlet is arranged on the air pumping ring.

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