Semi-regenerative lower electrode surface Emboss manufacturing method

Abstract

The invention provides a semi-regenerative lower electrode surface Emboss manufacturing method, and belongs to the technical field of liquid crystal panel processing. The method specifically comprises the following steps: performing warehousing inspection and pretreatment on a lower electrode, and performing semi-regeneration production evaluation after inspection parameters are obtained; stripping, primary grinding and sand blasting are carried out on the surface of the lower electrode meeting the semi-regeneration production condition; carrying out preparation before spraying, spraying operation and treatment after spraying, and spraying a second insulating layer on the surface of the lower electrode after sand blasting; performing fine grinding on the sprayed lower electrode; 1 Pitch Embedded manufacturing is carried out on the lower electrode which is subjected to fine grinding; and carrying out warehouse-out inspection on the lower electrode after the manufacturing of the 1Pitch Embedding is completed. According to the invention, the comprehensive repair and performance improvement of the electrode are realized, and particularly, the Emboss structure is obviously optimized, so that the electrical performance and adsorption capacity of the electrode and the precision and uniformity of the Emboss are obviously improved.

Description

Technical Field

[0001] The invention belongs to the technical field of liquid crystal panel processing, and in particular relates to a method for manufacturing a semi-regenerative lower electrode surface Emboss. Background Art

[0002] In the semiconductor manufacturing and flat panel display (FPD) industries, the etching process of glass substrates is one of the key links in the manufacturing process. As the core component of the etching equipment, the lower electrode ensures the uniformity of the temperature of the glass substrate during the etching process, thereby avoiding deformation and uneven etching caused by thermal stress.

[0003] Traditionally, the surface design of the lower electrode is mostly flat type, that is, the surface is smooth and has no protrusions. However, this design has exposed significant defects in practical applications, especially the serious problem of electrostatic interference (ESD), which leads to incomplete static discharge, affecting production efficiency and product quality. In order to overcome this problem, the industry has gradually improved the electrode surface to emboss type, that is, making small convex points (Emboss) on the electrode surface. These convex points can not only effectively support the glass substrate to prevent it from sinking due to gravity or thermal stress, but also provide a circulation channel for the back cooling gas, further improving the cooling effect and ensuring the uniformity of etching.

[0004] With the continuous advancement of technology and the improvement of customer needs, the design requirements for Emboss are becoming increasingly stringent. The spacing and uniformity of Emboss directly affect the etching quality of the glass substrate. Too large spacing or uneven distribution will lead to uneven etching, forming MURA defects visible to the naked eye, which seriously affects the yield and market acceptance of the product. At the same time, during long-term use, the electrode surface will gradually lose its original uniformity due to the precipitation of attachments, further exacerbating the problem of uneven etching.

[0005] In addition, with the continuous development of vacuum chamber etching technology, customers have increasingly smaller requirements for Emboss pitch, from the initial 5pitch to 3pitch, 2.5pitch, and even 2pitch, and even demand for 1pitch Emboss. This trend poses a higher challenge to the Emboss manufacturing process, because as the pitch decreases, the manufacturing difficulty increases significantly, and the accuracy and stability requirements for the equipment are also higher.

[0006] In the current market environment, most Emboss production processes are still concentrated in the range of 2-5Pitch. The 1.5Pitch process is relatively rare, and companies that can achieve 1Pitch Emboss production are even rarer.

[0007] In the existing technology, due to the size limitations of large electrodes such as 8G and 10.5G, it is not possible to directly use a whole JIG for Emboss Coating, and it is necessary to use multiple small JIGs to splice. This splicing method brings additional technical difficulties, especially the masking of the seams between small JIGs is very difficult. The distance between the Emboss JIG holes is extremely small (about 0.5mm), and it is very easy to deviate when using tape for masking, resulting in quality problems such as pits or coating protrusions during sandblasting and coating, which are difficult to repair through subsequent processes, seriously affecting the overall quality of the product. Summary of the invention

[0008] In view of the above problems, the present invention provides a method for producing Emboss on the surface of a semi-regenerated lower electrode. Through a series of refined process steps and innovative structural design, the comprehensive repair and performance improvement of the electrode is achieved, especially the significant optimization of the Emboss structure, ensuring that the electrical properties, adsorption force of the electrode, and the accuracy and uniformity of the Emboss are significantly improved.

[0009] The present invention provides a method for producing a semi-regenerative lower electrode surface Emboss, comprising the following steps:

[0010] After the lower electrode is inspected and pre-treated before storage, the semi-regeneration production evaluation is carried out after obtaining the inspection parameters;

[0011] The surface of the lower electrode that meets the semi-regeneration production conditions is stripped, ground once, and sandblasted;

[0012] Performing pre-spraying preparation, spraying operation and post-spraying treatment, spraying a second insulating layer on the surface of the lower electrode after sandblasting;

[0013] Fine grinding of the sprayed lower electrode;

[0014] Perform 1Pitch Emboss on the finely ground lower electrode;

[0015] After the 1Pitch Emboss is completed, the lower electrode is inspected before shipment.

[0016] As a further improvement of the present invention, after the lower electrode is inspected and pre-processed before entering the warehouse, the semi-regeneration production evaluation is performed after the inspection parameters are obtained, including:

[0017] Carry out warehouse inspection on the lower electrode, detect and record the resistance value, glass height, overall thickness, Dam height, Dam roughness, Emboss height, Flange thickness, and flatness of the lower electrode, and obtain the test results;

[0018] For the lower electrode with a resistance value less than or equal to 500MΩ at 1000V, vacuum drying is performed to remove excess moisture;

[0019] Re-measure the resistance value of the lower electrode and update the test result;

[0020] Determine whether the lower electrode meets the semi-regeneration production conditions based on the test results.

[0021] As a further improvement of the present invention, the parameter standards of the semi-regeneration production conditions are: the resistance value of the lower electrode at 1000V is greater than 500MΩ, the leakage current is less than 50μA at 3000V, the flatness is less than 0.1mm, and the Glass has no large cracks or gaps.

[0022] As a further improvement of the present invention, the surface of the lower electrode that meets the semi-regeneration production conditions is peeled off, ground once, and sandblasted, including:

[0023] peeling off the upper portion of the second insulating layer of the lower electrode;

[0024] After the upper part of the second insulating layer is peeled off, the lower electrode is cleaned, dried and then ground once to make the surface of the lower electrode after the upper part of the second insulating layer is peeled off smooth;

[0025] The lower electrode surface after the primary grinding is sandblasted after masking;

[0026] The lower electrode after sandblasting is cleaned and dried.

[0027] As a further improvement of the present invention, the pre-spraying preparation, spraying operation and post-spraying treatment, spraying the second insulating layer on the surface of the lower electrode after sandblasting, includes:

[0028] Masking the lower electrode surface after sandblasting;

[0029] Clean and debug spraying equipment;

[0030] Partial regeneration and second insulation layer spraying were performed on the lower electrode, with the spraying thickness controlled to 180 μm and the total thickness to 410 μm to enhance corrosion resistance;

[0031] After spraying, post-spraying treatment is carried out, including masking and pin hole operations, to remove the excess part of the coating edge to ensure the coating quality.

[0032] As a further improvement of the present invention, the fine grinding of the sprayed lower electrode comprises:

[0033] The grinding thickness is precisely controlled between 200μm-230μm, and the parts are cleaned and dried to remove pollutants and cutting fluid residues.

[0034] As a further improvement of the present invention, the 1 Pitch Emboss manufacturing of the finely ground lower electrode comprises:

[0035] For the lower electrode that meets the semi-regeneration production conditions, design a 1Pitch Emboss drawing that meets the requirements for making Emboss;

[0036] Design and manufacture JIG with 1mm accuracy;

[0037] According to the 1Pitch Emboss drawing and JIG, the lower electrode after fine grinding is masked by Emboss blasting, and then Emboss blasting is performed;

[0038] Emboss spraying treatment is performed on the Emboss after sandblasting;

[0039] The sprayed Emboss is subjected to Emboss post-spraying treatment to obtain a lower electrode Emboss coating.

[0040] As a further improvement of the present invention, the JIG has a fine tenon structure, and the tape is integrally formed during production to ensure the accuracy and uniformity of the Emboss.

[0041] As a further improvement of the present invention, the lower electrode of the 1Pitch Emboss is inspected after it is manufactured, including: washing with a high-pressure water gun and vacuum drying. The data is measured and the results are recorded to ensure that all indicators meet the standards.

[0042] As a further improvement of the present invention, the standards for the warehouse inspection are: the resistance value of the lower electrode is greater than 500MΩ at 1000V, the leakage current is less than 50μA at 3000V, the Glass height is 30.00~30.10mm, the overall thickness is 45.00±0.1mm, the Dam height is 60~80μm, the Dam roughness is 1.5~2.0μm, the Emboss height is 40~60μm, the Flange thickness is 15.00±0.1mm, and the flatness is less than 0.05mm.

[0043] Compared with the prior art, the present invention has the following beneficial effects:

[0044] First, the method of the present invention significantly improves the electrical properties and adsorption force of the electrode, thereby enhancing the overall stability and production efficiency of the semiconductor manufacturing process, and providing a strong guarantee for the production of high-quality semiconductor products.

[0045] Secondly, by optimizing the accuracy and uniformity of the Emboss structure, the Emboss requirement of 1Pitch is achieved. The present invention not only effectively prolongs the service life of the electrode, but also significantly reduces the replacement frequency, thereby greatly reducing production costs and improving the economic benefits of the enterprise.

[0046] In addition, the present invention introduces advanced coating technology, combined with a series of refined process steps, to achieve precise control of coating thickness, significantly enhancing the corrosion resistance and durability of the electrode, enabling it to maintain stable working performance in more severe environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0047] Figure 1 A flow chart of a method for manufacturing a semi-regenerative lower electrode provided by the present invention;

[0048] Figure 2 A diagram showing the structure of the lower electrode after the upper portion of the second insulating layer is stripped off provided by the present invention;

[0049] Figure 3 A structural diagram of the lower electrode after the upper part of the second insulating layer provided by the present invention has been regenerated;

[0050] Figure 4 A schematic diagram of shielding of 1 Pitch Emboss of a semi-regenerative lower electrode manufactured by the method provided by the present invention. DETAILED DESCRIPTION

[0051] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0052] The present invention provides a method for producing a semi-regenerative lower electrode surface Emboss, such as Figure 1 As shown, the specific steps include:

[0053] S1: After the lower electrode is inspected and pre-treated before entering the warehouse, the semi-regeneration production evaluation is carried out after obtaining the inspection parameters;

[0054] Preferably, after the lower electrode is inspected and pre-processed before entering storage, a semi-regeneration production evaluation is performed after obtaining the inspection parameters, including:

[0055] Carry out warehouse inspection on the lower electrode, detect and record the key parameters of the lower electrode, such as resistance value, glass height, overall thickness, Dam height, Dam roughness, Emboss height, Flange thickness, flatness, etc., and obtain the test results;

[0056] For the lower electrode with a resistance value less than or equal to 500MΩ at 1000V, vacuum drying is performed to remove excess moisture;

[0057] Re-measure the resistance value of the lower electrode and update the test result;

[0058] Determine whether the lower electrode meets the semi-regeneration production conditions based on the test results.

[0059] Preferably, the parameter standards of the semi-regeneration production conditions are: the resistance value of the lower electrode at 1000V is greater than 500MΩ, the leakage current is less than 50μA at 3000V, the flatness is less than 0.1mm, and the Glass has no large cracks, gaps and other abnormalities.

[0060] In one embodiment of the present invention, a lower electrode is strictly inspected before storage, and a high-precision resistance measuring instrument is used to detect the resistance value, a digital depth gauge is used to detect the Glass height, a U-shaped micrometer is used to detect the overall thickness, a digital depth gauge is used to detect the Dam height, a 210 roughness meter is used to detect the Dam roughness, a digital depth gauge is used to detect the Emboss height, a Leeb hardness tester is used to detect the Flange thickness, and an MCT is used to measure the flatness, and the inspection results of the lower electrode storage are obtained, as shown in Table 1:

[0061] Table 1:

[0062] 1. Resistance value: 776MΩ / 1056V 5.Dam roughness: 1.32-1.58μm 2. Glass height: 30.03-30.05mm 6.Emboss height: 42-53μm 3. Overall thickness: 44.99-45.05mm 7. Flange thickness: 14.96-15.00mm 4. Dam height: 61-73μm 8. Flatness: 0.07mm

[0063] As shown in Table 1, the lower electrodes to be stored meet the requirements that the resistance value of the lower electrode is greater than 500MΩ at 1000V, the leakage current is less than 50μA at 3000V, the flatness is less than 0.1mm, and the Glass has no large cracks, gaps and other abnormalities. The electrical performance test is qualified, and all data are normal, so the semi-regeneration process can be carried out.

[0064] S2: peeling, primary grinding and sandblasting the surface of the lower electrode that meets the semi-regeneration production conditions;

[0065] Preferably, the peeling, primary grinding and sandblasting of the surface of the lower electrode that meets the semi-regeneration production conditions comprises:

[0066] S21: stripping an upper portion of the second insulating layer of the lower electrode;

[0067] The upper portion of the second insulating layer of the lower electrode is a surface insulating layer located on the Glass surface of the lower electrode, and the position is as follows Figure 2 As shown;

[0068] The lower electrode after peeling off the upper part of the second insulating layer is cleaned, dried and then ground once to make the surface of the lower electrode after peeling off the upper part of the second insulating layer smooth;

[0069] For example, the primary grinding may be performed using an MCT device using a diamond tool having a diameter of 5 to 10 cm.

[0070] S22: sandblasting the surface of the lower electrode after the first grinding after masking;

[0071] The sandblasting material is 60# or 80# white corundum, the sandblasting distance is controlled at 30-50cm, and the sandblasting pressure is 0.3-0.6MPa.

[0072] S23: Clean and dry the lower electrode after sandblasting.

[0073] In one embodiment of the present invention, the upper part of the second insulating layer of the lower electrode is stripped, ground once, and sandblasted. The lower electrode after sandblasting is inspected, and the glass height is inspected by a digital depth gauge, the overall thickness is inspected by a U-shaped micrometer, the flange thickness is inspected by a Leeb hardness tester, and the flatness is measured by an MCT. The inspection results of the lower electrode after sandblasting are obtained, as shown in Table 2:

[0074] Table 2:

[0075] 1. Resistance value: -- 5.Dam roughness: -- 2.Glass height: 29.78-29.81mm 6.Emboss height:-- 3. Overall thickness: 44.81-44.84mm 7. Flange thickness: 14.96-15.00mm 4.Dam height:-- 8. Flatness: 0.03mm

[0076] Since part of the second insulating layer was peeled off, it needed to be reprocessed in subsequent steps, and the resistance value, Dam height, roughness, and Emboss height could not be measured.

[0077] After sandblasting of the lower electrode, the coating sinking amount is 30 to 50 μm and the roughness is 4 to 8 μm.

[0078] S3: Perform pre-spraying preparation, spraying operation and post-spraying treatment, spray the second insulating layer on the surface of the lower electrode after sandblasting, and repair abnormal parts such as edge gaps and cracks;

[0079] Preferably, the pre-spraying preparation, spraying operation and post-spraying treatment, spraying the second insulating layer on the surface of the lower electrode after sandblasting, includes:

[0080] S31: masking the surface of the lower electrode after sandblasting;

[0081] S32: Clean and debug the spraying equipment;

[0082] S33: performing partial regeneration and second insulation layer spraying operation on the lower electrode, controlling the spraying thickness to be 400-450 μm to enhance corrosion resistance;

[0083] Preferably, the spraying operation uses Al 2 O 3 The coating powder is sprayed using FST equipment. During the spraying operation, the hydrogen flow rate is controlled to be 6-10 NLPM, the argon flow rate is 40-50 NLPM, the current is 500-600 A, the voltage is 60-80 V, and the spraying distance is 10-15 cm.

[0084] S34: After spraying, post-spraying treatment is performed, including removing masking tape, silicone plugs, etc., and burrs at the edges, holes, etc., and removing excess parts at the edges of the coating to ensure the quality of the coating.

[0085] In one embodiment of the present invention, the lower electrode after sandblasting is subjected to coating spraying preparation and coating spraying operation, a digital depth gauge is used to detect the glass height, a U-shaped micrometer is used to detect the overall thickness, and a Leeb hardness tester is used to detect the flange thickness, and the detection results of the lower electrode after coating spraying are obtained, as shown in Table 4:

[0086] Table 4:

[0087] 1. Resistance value: -- 5.Dam roughness: -- 2. Glass height: 30.23-30.29mm 6.Emboss height:-- 3. Overall thickness: 45.21-45.25mm 7. Flange thickness: 14.96-15.00mm 4.Dam height:-- 8. Flatness: --

[0088] The measured data after coating spraying shows that the coating thickness reaches 400-450μm. The Glasss height data and overall thickness data are more than 0.2mm higher than the warehouse inspection results shown in Table 1, reaching the standard after spraying.

[0089] S4: fine grinding of the sprayed lower electrode;

[0090] Preferably, the fine grinding of the sprayed lower electrode includes: accurately controlling the grinding thickness to be between 200 μm and 230 μm, and cleaning and drying to remove pollutants and cutting fluid residues.

[0091] In one embodiment of the present invention, the lower electrode is stripped, ground once, sandblasted and finely ground. The sandblasted lower electrode is tested after MCT fine grinding. A high-precision resistance measuring instrument is used to detect the resistance value, a digital depth gauge is used to detect the Glass height, a U-shaped micrometer is used to detect the overall thickness, a digital depth gauge is used to detect the Dam height, a 210 roughness meter is used to detect the Dam roughness, a Leeb hardness tester is used to detect the Flange thickness, and an MCT is used to measure the flatness. The test results after fine grinding are shown in Table 3:

[0092] Table 3:

[0093] 1. Resistance value: 8.37GΩ / 541V 5.Dam roughness: 1.870-1.964μm 2. Glass height: 30.02-30.05mm 6.Emboss height:-- 3. Overall thickness: 45.01-45.04mm 7. Flange thickness: 14.96-15.00mm 4. Dam height: 67-76μm 8. Flatness: 0.03mm

[0094] It can be seen from Table 3 that after fine grinding of the lower electrode MCT, the electrical performance is qualified, and the Glass height is 30.00-30.10 mm, the overall thickness is 45.00±0.1 mm, the Dam height is 60-80 μm, the Dam roughness is 1.5-2.0 μm, the Flange thickness is 15.00±0.1 mm, and the flatness is less than 0.05 mm. The data is within the set standard range.

[0095] S5: 1Pitch Emboss is made on the lower electrode after fine grinding;

[0096] Preferably, the 1 Pitch Emboss manufacturing of the finely ground lower electrode comprises:

[0097] S51: For the lower electrode that meets the semi-regeneration production conditions, design the 1Pitch Emboss drawing that meets the requirements for the production of Emboss;

[0098] For the lower electrode that meets the semi-regeneration production conditions, CAD and other design software are used to design 1Pitch Emboss drawings that meet the requirements according to the Glass surface size, providing accurate layout and size basis for subsequent production. The subsequent steps will be semi-regeneration production and 1Pitch Emboss testing.

[0099] S52: Design and manufacture JIG with 1mm accuracy;

[0100] The JIG has a fine tenon structure and is integrally formed using tape during production to ensure the accuracy and uniformity of the Emboss.

[0101] Exemplarily, 25 JIGs are used for splicing and are integrally formed using adhesive tape.

[0102] Both sides of the steel mesh need to be protected by tape. The hole spacing is very small. One-piece molding can reduce the time and misalignment of later manual masking, ensuring that all holes are not blocked by later masking tape.

[0103] S52: Emboss blast masking and then Emboss blasting of the finely ground lower electrode according to the 1Pitch Emboss drawing and JIG;

[0104] Use the designed JIG to make Emboss, and strictly control the height, diameter and uniformity of Emboss.

[0105] S53: Emboss spraying treatment is performed on the Emboss after sandblasting;

[0106] S54: performing Emboss post-spraying treatment on the Emboss after spraying to obtain a lower electrode Emboss coating.

[0107] Preferably, the Emboss spraying post-processing includes de-shielding and test verification. According to the test results, the Emboss is modified and optimized as necessary to ensure that the performance meets the standard, and the lower electrode 1Pitch Emboss is obtained, such as Figure 3 and Figure 4 shown.

[0108] In one embodiment of the present invention, the lower electrode 1 Pitch Emboss is tested after it is manufactured. A digital depth gauge is used to detect the glass height, a U-shaped micrometer is used to detect the overall thickness, a digital depth gauge is used to detect the Dam height, a 210 roughness meter is used to detect the Dam roughness, a digital depth gauge is used to detect the Emboss height, a Leeb hardness tester is used to detect the Flange thickness, and an MCT is used to measure the flatness. The test results of the lower electrode 1 Pitch Emboss after it is manufactured are obtained, as shown in Table 5:

[0109] Table 5:

[0110] 1. Resistance value: -- 5.Dam roughness: 1.870-1.964μm 2. Glass height: 30.02-30.05mm 6.Emboss height: 53-58μm 3. Overall thickness: 45.01-45.04mm 7. Flange thickness: 14.96-15.00mm 4. Dam height: 67-76μm 8. Flatness: 0.03mm

[0111] As shown in Table 5, the lower electrode 1 Pitch Emboss is completed, and all Emboss data are qualified and the shape is good. The electrical performance reflected by the resistance value needs to be measured after cleaning and drying.

[0112] S6: Perform outbound inspection on the lower electrode after 1Pitch Emboss is completed.

[0113] Use a high-pressure water gun to rinse and vacuum dry. Complete data measurement and record the results to ensure that all indicators meet the standards. Perform chemical cleaning and properly package the electrodes, ready for shipment and use on the machine.

[0114] Preferably, the release standard is that the resistance value of the lower electrode at 1000V is greater than 500MΩ, the leakage current at 3000V is less than 50μA, the Glass height is 30.00~30.10mm, the overall thickness is 45.00±0.1mm, the Dam height is 60~80μm, the Dam roughness is 1.5~2.0μm, the Emboss height is 40~60μm, the Flange thickness is 15.00±0.1mm, and the flatness is less than 0.05mm.

[0115] In one embodiment of the present invention, the lower electrode of 1Pitch Emboss is inspected after it is manufactured. A high-precision resistance measuring instrument is used to detect the resistance value, a digital depth gauge is used to detect the Glass height, a U-shaped micrometer is used to detect the overall thickness, a digital depth gauge is used to detect the Dam height, a 210 roughness meter is used to detect the Dam roughness, a digital depth gauge is used to detect the Emboss height, a Leeb hardness tester is used to detect the Flange thickness, and an MCT is used to measure the flatness. The test results are shown in Table 6:

[0116] Table 6:

[0117] 1. Resistance value: 4.41GΩ / 1055V 5.Dam roughness: 1.870-1.964μm 2. Glass height: 30.02-30.05mm 6.Emboss height: 53-58μm 3. Overall thickness: 45.01-45.04mm 7. Flange thickness: 14.96-15.00mm 4. Dam height: 67-76μm 8. Flatness: 0.03mm

[0118] After the production is completed, the Emboss is full and becomes a cylinder with a small top and a large bottom, with a height of 40 to 60μm. The number of missing Emboss pieces is less than 5. The resistance value and various parameters of the lower electrode of the 1Pitch Emboss are qualified, and it is packaged and shipped out.

[0119] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, a person having ordinary knowledge in the art can still modify the technical solutions recorded in the aforementioned embodiments, or replace part or all of the technical features therein with equivalents. These modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present invention, and they should all be included in the scope of the claims and specification of the present invention.

Claims

1. A method for producing a semi-regenerative lower electrode surface Emboss, characterized in that: The following steps are involved: After the lower electrode is inspected and pre-treated before storage, the semi-regeneration production evaluation is carried out after obtaining the inspection parameters; The surface of the lower electrode that meets the semi-regeneration production conditions is stripped, ground once, and sandblasted; Performing pre-spraying preparation, spraying operation and post-spraying treatment, spraying a second insulating layer on the surface of the lower electrode after sandblasting; Fine grinding of the sprayed lower electrode; Perform 1Pitch Emboss on the finely ground lower electrode; After the 1Pitch Emboss is completed, the lower electrode is inspected before shipment.

2. The method for producing the semi-regenerative lower electrode surface Emboss according to claim 1, characterized in that: After the lower electrode is inspected and pre-processed before entering the warehouse, the semi-regeneration production evaluation is performed after the inspection parameters are obtained, including: Carry out warehouse inspection on the lower electrode, detect and record the resistance value, glass height, overall thickness, Dam height, Dam roughness, Emboss height, Flange thickness, and flatness of the lower electrode, and obtain the test results; For the lower electrode with a resistance value less than or equal to 500MΩ at 1000V, vacuum drying is performed to remove excess moisture; Re-measure the resistance value of the lower electrode and update the test result; Determine whether the lower electrode meets the semi-regeneration production conditions based on the test results.

3. The method for producing the semi-regenerative lower electrode surface Emboss according to claim 2, characterized in that: The parameter standards of the semi-regeneration production conditions are: the resistance value of the lower electrode is greater than 500MΩ at 1000V, the leakage current is less than 50μA at 3000V, the flatness is less than 0.1mm, and the Glass has no large cracks or gaps.

4. The method for producing a semi-regenerative lower electrode surface Emboss according to claim 1, characterized in that: The method of stripping, grinding and sandblasting the surface of the lower electrode that meets the semi-regeneration production conditions includes: peeling off the upper portion of the second insulating layer of the lower electrode; After the upper part of the second insulating layer is peeled off, the lower electrode is cleaned, dried and then ground once to make the surface of the lower electrode after the upper part of the second insulating layer is peeled off smooth; The lower electrode surface after the primary grinding is sandblasted after masking; The lower electrode after sandblasting is cleaned and dried.

5. The method for producing a semi-regenerative lower electrode surface Emboss according to claim 1, characterized in that: The pre-spraying preparation, spraying operation and post-spraying treatment are performed to spray the second insulating layer on the surface of the lower electrode after sandblasting, including: Masking the lower electrode surface after sandblasting; Clean and debug spraying equipment; Partial regeneration and second insulation layer spraying were performed on the lower electrode, with the spraying thickness controlled to 180 μm and the total thickness to 410 μm to enhance corrosion resistance; After spraying, post-spraying treatment is carried out, including masking and pin hole operations, to remove the excess part of the coating edge to ensure the coating quality.

6. The method for producing a semi-regenerative lower electrode surface Emboss according to claim 1, characterized in that: The method of fine grinding the sprayed lower electrode comprises: The grinding thickness is precisely controlled between 200μm-230μm, and the parts are cleaned and dried to remove pollutants and cutting fluid residues.

7. The method for producing a semi-regenerative lower electrode surface Emboss according to claim 1, characterized in that: The 1 Pitch Emboss manufacturing of the finely ground lower electrode comprises: For the lower electrode that meets the semi-regeneration production conditions, design a 1Pitch Emboss drawing that meets the requirements for making Emboss; Design and manufacture JIG with 1mm accuracy; According to the 1Pitch Emboss drawing and JIG, the lower electrode after fine grinding is masked by Emboss blasting, and then Emboss blasting is performed; Emboss spraying treatment is performed on the Emboss after sandblasting; The sprayed Emboss is subjected to Emboss post-spraying treatment to obtain a lower electrode Emboss coating.

8. The method for producing a semi-regenerative lower electrode surface Emboss according to claim 7, characterized in that: The JIG has a fine tenon structure and the tape is integrally formed during production to ensure the accuracy and uniformity of the Emboss.

9. The method for producing a semi-regenerative lower electrode surface Emboss according to claim 1, characterized in that: The lower electrode of the 1Pitch Emboss is inspected after it is manufactured, including: washing with a high-pressure water gun and vacuum drying. The data is measured and the results are recorded to ensure that all indicators meet the standards.

10. The method for producing a semi-regenerative lower electrode surface Emboss according to claim 1 or 9, characterized in that: The standards for the warehouse inspection are: the resistance value of the lower electrode is greater than 500MΩ at 1000V, the leakage current is less than 50μA at 3000V, the Glass height is 30.00~30.10mm, the overall thickness is 45.00±0.1mm, the Dam height is 60~80μm, the Dam roughness is 1.5~2.0μm, the Emboss height is 40~60μm, the Flange thickness is 15.00±0.1mm, and the flatness is less than 0.05mm.

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