Light-emitting device, preparation method of light-emitting device and electronic equipment

Abstract

The invention discloses a light-emitting device, a preparation method of the light-emitting device and electronic equipment, and the light-emitting device comprises an anode and a cathode which are oppositely arranged, a light-emitting layer arranged between the anode and the cathode, an electronic function layer arranged between the cathode and the light-emitting layer, and an auxiliary layer arranged between the electronic function layer and the light-emitting layer. The auxiliary layer comprises a linking group, the linking group comprises two sulfur atoms and at least one carbon-carbon double bond, the linking group is connected with the electronic function layer through one sulfur atom, and the linking group is connected with the light-emitting layer through the other sulfur atom, so that the light-emitting efficiency of the light-emitting device is improved, and the service life of the device is prolonged; the preparation method of the light-emitting device has the advantages that the preparation process is simple, process conditions are easy to control, and large-scale industrial production requirements are met, the light-emitting device or the light-emitting device prepared by the preparation method of the light-emitting device is applied to electronic equipment, the photoelectric property of the electronic equipment is improved, and the service life of the electronic equipment is prolonged.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a light-emitting device, a method for preparing a light-emitting device, and an electronic device. Background Art

[0002] A light-emitting device refers to a type of device that emits light through the injection and recombination of carriers, including but not limited to organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED). A light-emitting device has a "sandwich" structure, that is, it includes an anode, a cathode, and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of a light-emitting device is: electrons are injected from the cathode of the device into the light-emitting area, holes are injected from the anode of the device into the light-emitting area, and electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0003] After years of development, light-emitting devices have made great progress in performance indicators and have shown great potential for application development. However, there are still some shortcomings, such as the device life of light-emitting devices needs to be further improved. Therefore, how to further improve the device life of light-emitting devices is of great significance to the application and development of light-emitting devices. Summary of the invention

[0004] The present application provides a light-emitting device, a method for preparing the light-emitting device, and an electronic device to improve the device life of the light-emitting device.

[0005] In a first aspect, the present application provides a light emitting device, comprising:

[0006] An anode and a cathode arranged opposite to each other;

[0007] A light-emitting layer is disposed between the anode and the cathode;

[0008] an electronic functional layer, disposed between the cathode and the light-emitting layer; and

[0009] An auxiliary layer, disposed between the electronic functional layer and the light-emitting layer;

[0010] Wherein, the auxiliary layer includes a connecting group, and the connecting group is a first group of the structure shown in the following general formula (I) and / or a second group of the structure shown in the following general formula (II):

[0011]

[0012] Wherein, * represents a connecting bond; the connecting group is connected to the electronic functional layer and the light-emitting layer respectively;

[0013] R1, R2, R5 and R6 are independently selected from hydrogen, deuterium, tritium, substituted or unsubstituted C1-C10 straight chain hydrocarbon group or branched hydrocarbon group, substituted or unsubstituted C1-C10 straight chain hydrocarbonoxy group or branched hydrocarbonoxy group, substituted or unsubstituted aliphatic cycloalkyl group having 3-30 ring atoms, substituted or unsubstituted aliphatic heterocycloalkyl group having 3-30 ring atoms, substituted or unsubstituted aryl group having 6-30 ring atoms, substituted or unsubstituted heteroaryl group having 5-30 ring atoms;

[0014] R3, R4, R7 and R8 are independently selected from -(CH2) n - or -CH=CH-, n is a positive integer of 1 to 6.

[0015] Optionally, the substituted or unsubstituted C1-C10 straight-chain or branched-chain hydrocarbon group is selected from C1-C3 straight-chain or branched-chain hydrocarbon groups; and / or

[0016] The substituted or unsubstituted C1-C10 straight chain alkyloxy or branched chain alkyloxy is selected from C1-C3 straight chain alkyloxy or branched chain alkyloxy; and / or

[0017] The substituted or unsubstituted aliphatic cycloalkyl group having 3 to 30 ring atoms is selected from aliphatic cycloalkyl groups having 3 to 10 ring atoms; and / or

[0018] The substituted or unsubstituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms is selected from aliphatic heterocyclic hydrocarbon groups having 3 to 10 ring atoms; and / or

[0019] The substituted or unsubstituted aryl group having 6 to 30 ring atoms is selected from aryl groups having 6 to 18 ring atoms; and / or

[0020] The substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms is selected from heteroaryl groups having 5 to 18 ring atoms.

[0021] Optionally, the linking group is selected from one or more of the following groups:

[0022]

[0023] Optionally, the material of the electronic functional layer comprises a first inorganic compound, the connecting group connects the first inorganic compound, and the first inorganic compound comprises one or more of an undoped first metal oxide, a doped second metal oxide, a II-VI semiconductor material, a III-V semiconductor material, and a I-III-VI semiconductor material;

[0024] Wherein, the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn, and / or the molar percentage of the first doping element in the doped second metal oxide is less than 50%; and / or, the II-VI group semiconductor material is selected from one or more of ZnS, ZnSe and CdS; and / or, the III-V group semiconductor material is selected from one or more of InP and GaP; and / or, the I-III-VI group semiconductor material is selected from one or more of CuInS and CuGaS; and / or

[0025] The material of the light-emitting layer comprises quantum dots, and the connecting group connects the quantum dots; the quantum dots are selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots; the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots and the material of the shell of the core-shell structure quantum dots are independently selected from at least one of II-VI compounds, III-V compounds, IV-VI compounds or I-III-VI compounds, wherein the II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, Zn ...Se, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, Z One or more of: nO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, wherein the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNA s, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAl The inorganic perovskite quantum dot is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the inorganic perovskite quantum dot is selected from one or more of CuInS, CuInSe and AgInS; and / or the inorganic perovskite quantum dot has a general structural formula of AMX3, wherein A is Cs + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is an organic amine cation.

[0026] Optionally, the material of the anode and the material of the cathode independently contain one or more of a metal, a carbon material and a third metal oxide; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the third metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3; and / or

[0027] The light-emitting device further comprises a hole functional layer, which is arranged between the anode and the light-emitting layer. The material of the hole functional layer comprises a non-doped second inorganic compound, a doped third inorganic compound, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butyl) phenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1- The following are some of the following: N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9, 9'-spirobifluorene; wherein the non-doped second inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide; and / or, the doped third inorganic compound is a main inorganic compound doped with a second doping element, the main inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0028] In a second aspect, the present application provides a method for preparing a light-emitting device, comprising the following steps:

[0029] providing a bottom electrode, and forming a light-emitting layer on one side of the bottom electrode; and

[0030] forming a top electrode on a side of the light-emitting layer away from the bottom electrode;

[0031] Wherein, when the light-emitting device is of a positive structure, the bottom electrode is an anode and the top electrode is a cathode, after the step of forming the light-emitting layer and before the step of forming the top electrode, the preparation method further comprises the steps of: depositing a solution containing an auxiliary functional material on a side of the light-emitting layer away from the bottom electrode so that at least part of the auxiliary functional material is connected to the light-emitting layer, and then forming an electronic functional layer on a side of the light-emitting layer where the solution is deposited, and an auxiliary layer is formed between the electronic functional layer and the light-emitting layer; or,

[0032] When the light-emitting device is an inverted structure, the bottom electrode is a cathode and the top electrode is an anode, and before the step of forming a light-emitting layer on one side of the bottom electrode, the preparation method further comprises the steps of: forming an electronic functional layer on one side of the bottom electrode, and then depositing a solution containing an auxiliary functional material on a side of the electronic functional layer away from the bottom electrode, so that at least part of the auxiliary functional material is connected to the electronic functional layer; after forming the light-emitting layer on the side of the electronic functional layer where the solution is deposited, an auxiliary layer is formed between the electronic functional layer and the light-emitting layer;

[0033] Wherein, the auxiliary functional material comprises a compound having a structure represented by the following general formula (III) and / or a compound having a structure represented by the following general formula (IV):

[0034]

[0035] R1, R2, R5 and R6 are independently selected from hydrogen, deuterium, tritium, substituted or unsubstituted C1-C10 straight chain hydrocarbon group or branched hydrocarbon group, substituted or unsubstituted C1-C10 straight chain hydrocarbonoxy group or branched hydrocarbonoxy group, substituted or unsubstituted aliphatic cycloalkyl group having 3-30 ring atoms, substituted or unsubstituted aliphatic heterocycloalkyl group having 3-30 ring atoms, substituted or unsubstituted aryl group having 6-30 ring atoms, substituted or unsubstituted heteroaryl group having 5-30 ring atoms;

[0036] R3, R4, R7 and R8 are independently selected from -(CH2) n - or -CH=CH-, n is a positive integer of 1 to 6.

[0037] Optionally, the mass of the auxiliary functional material accounts for 3% to 5% of the total mass of the solution; and / or

[0038] The deposition thickness of the solution is 5nm to 10nm; and / or

[0039] The substituted or unsubstituted C1-C10 straight-chain or branched-chain hydrocarbon group is selected from C1-C3 straight-chain or branched-chain hydrocarbon groups; and / or

[0040] The substituted or unsubstituted C1-C10 straight chain alkyloxy or branched chain alkyloxy is selected from C1-C3 straight chain alkyloxy or branched chain alkyloxy; and / or

[0041] The substituted or unsubstituted aliphatic cycloalkyl group having 3 to 30 ring atoms is selected from aliphatic cycloalkyl groups having 3 to 10 ring atoms; and / or

[0042] The substituted or unsubstituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms is selected from aliphatic heterocyclic hydrocarbon groups having 3 to 10 ring atoms; and / or

[0043] The substituted or unsubstituted aryl group having 6 to 30 ring atoms is selected from aryl groups having 6 to 18 ring atoms; and / or

[0044] The substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms is selected from heteroaryl groups having 5 to 18 ring atoms.

[0045] Optionally, the auxiliary functional material is selected from one or more of the following compounds:

[0046]

[0047] Optionally, when the light-emitting device is a positive structure, after the step of depositing a solution containing an auxiliary functional material on a side of the light-emitting layer away from the bottom electrode and before the step of forming the electronic functional layer, the preparation method further comprises the steps of: removing the auxiliary functional material not connected to the light-emitting layer;

[0048] Alternatively, when the light-emitting device is an inverted structure, after the step of depositing a solution containing auxiliary functional materials on a side of the electronic functional layer away from the bottom electrode and before the step of forming the light-emitting layer, the preparation method further includes the step of removing the auxiliary functional materials that are not connected to the electronic functional layer.

[0049] In a third aspect, the present application further provides an electronic device, comprising a light-emitting device as described in any one of the first aspects, or a light-emitting device manufactured by any one of the manufacturing methods described in the second aspect.

[0050] The present application provides a light-emitting device, a method for preparing a light-emitting device, and an electronic device, which have the following technical effects:

[0051] In the light-emitting device, an auxiliary layer is provided between the electronic functional layer and the light-emitting layer, wherein the auxiliary layer includes connecting groups, and the connecting groups are respectively connected to the electronic functional layer and the light-emitting layer, thereby improving the connection tightness between the light-emitting layer and the electronic functional layer, reducing the risk of separation of the electronic functional layer and the light-emitting layer, and thus effectively improving the device life of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0053] Figure 1 A schematic diagram of the structure of a light-emitting device provided in an embodiment of the present application.

[0054] The reference numerals are as follows:

[0055] 10: light-emitting device, 11: anode, 12: cathode, 13: light-emitting layer, 14: auxiliary layer, 15: electronic functional layer, 16: hole functional layer, 161: hole injection layer, 162: hole transport layer. DETAILED DESCRIPTION

[0056] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0057] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to the present invention. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0058] It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be presented in the form of a range. It should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0059] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the light-emitting device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the light-emitting device. The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0060] In the present application, “layer A is formed on one side of layer B”, “layer A is formed on one side of layer B away from layer C” or similar descriptions can be expressed as layer A is directly formed on one side of layer B or on one side of layer B away from layer C, that is, layer A is in direct contact with layer B, or layer A is indirectly formed on one side of layer B or on one side of layer B away from layer C, that is, other spacing structure layers can be formed between layer A and layer B. Similarly, “layer A is arranged on one side of layer B”, “layer A is arranged on one side of layer B away from layer C” can be expressed as layer A is in direct contact with layer B, or other spacing structure layers are arranged between layer A and layer B; “layer A is arranged between layer B and layer C” can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and layer A is in direct contact with layer C.

[0061] As used in this application, the term "including" means "including but not limited to".

[0062] As used in this application, the term "and / or" is used to describe the association relationship of associated objects, indicating that there may be three relationships, for example, A and / or B, which may indicate: A exists alone, A and B exist at the same time, and B exists alone. A and B may be singular or plural.

[0063] As used in this application, the term "at least one" refers to one or more, and "multiple" refers to two or more. The term "at least one", "the following at least one" or similar expressions refer to any combination of these items, including any combination of a single or multiple. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc or abc, where a, b and c can be single or multiple, respectively.

[0064] As used in this application, "substituted or unsubstituted" means that the defined group may be substituted or unsubstituted. When the defined group is substituted, it should be understood that the defined group may be substituted by one or more substituents R0, R0 includes but is not limited to: cyano, isocyano, nitro, halogen atoms, alkyl groups containing 1 to 20 carbon atoms, heterocyclic groups containing 3 to 20 ring atoms, aryl groups containing 6 to 20 ring atoms, -NR'R", silane, carbonyl, alkoxycarbonyl, aryloxycarbonyl, carbamoyl, haloformyl, formyl, isocyanate, thiocyanate, isothiocyanate, hydroxyl, trifluoromethyl, and the above groups may be further substituted by substituents acceptable in the art; it is understandable that R' and R" in -NR'R" are independently and include but are not limited to H, cyano, isocyano, nitro or halogen, alkyl groups containing 1 to 10 carbon atoms, heterocyclic groups containing 3 to 20 ring atoms, or aryl groups containing 6 to 20 ring atoms.

[0065] In the present application, "aryl" refers to an aromatic hydrocarbon group derived from an aromatic ring compound by removing a hydrogen atom, which can be a monocyclic aromatic group, a condensed aromatic group, or a polycyclic aromatic group. For polycyclic rings, at least one is an aromatic ring system, and the aryl group of the present application can be substituted or unsubstituted; it can be understood that multiple aromatic groups can also be interrupted by short non-aromatic units (for example, <10% of non-H atoms, such as C, N or O atoms), such as acenaphthene, fluorene, 9,9-diarylfluorene, triarylamine, diaryl ether system should also be included in the definition of aromatic group. In some embodiments of the present application, the number of ring atoms of the aromatic group is, for example, 6 to 30, 6 to 18, or 6 to 12, and non-limiting examples include phenyl, biphenyl, terphenyl, naphthyl, anthracenyl, phenanthrenyl, fluoranthenyl, triphenylene, pyrenyl, perylene, naphthyl, fluorenyl, dinaphthylenyl or acenaphthenyl.

[0066] As used in this application, "heteroaryl" means that at least one carbon atom is replaced by a non-carbon atom on the basis of an aryl group, and the non-carbon atom can be one or more of an N atom, an O atom, an S atom, and an Si atom, and the number of heteroatoms is 1 to 20, and the heteroaryl group of this application can be substituted or unsubstituted. In some embodiments of the present application, the number of ring atoms of the heteroaryl group is, for example, 5 to 30, 5 to 20, 5 to 18, 5 to 12, or 5 to 10, and non-limiting examples include thienyl, furanyl, pyrrolyl, oxadiazolyl, triazolyl, imidazolyl, pyridyl, bipyridyl, pyrimidyl, triazine, acridinyl, pyridazinyl, pyrazinyl, quinolyl, isoquinolyl, quinazolinyl, quinoxalinyl, phthalazinyl, pyrid ... pyrimidinyl, pyridopyrazinyl, benzothiophenyl, benzofuranyl, indolyl, pyrroloimidazolyl, pyrrolopyrrolyl, thienopyrrolyl, thienothiphenyl, furopyrrolyl, furofuranyl, thienofuranyl, benzisoxazolyl, benzisothiazolyl, benzimidazolyl, o-naphthyl, phenanthridinyl, primary pyridyl, quinazolinone, dibenzothiophenyl, dibenzofuranyl or carbazolyl.

[0067] As used in this application, "hydrocarbon group" includes alkyl groups and unsaturated hydrocarbon groups containing unsaturated bonds. The hydrocarbon group in this application can be a straight-chain hydrocarbon group, a branched hydrocarbon group, an aliphatic cycloalkyl group or an aliphatic heterocycloalkyl group, and an aliphatic heterocycloalkyl group means that at least one carbon atom on the basis of an aliphatic cycloalkyl group is replaced by a non-carbon atom, and the non-carbon atom can be one or more of an N atom, an O atom, an S atom and an Si atom, and the number of heteroatoms is 1 to 20. In some embodiments of the present application, the number of carbon atoms of the straight-chain hydrocarbon group or the branched hydrocarbon group is 1 to 10, 1 to 5, or 1 to 3, and non-limiting examples include methyl, ethyl, n-propyl, isopropyl, n-butyl, sec-butyl, tert-butyl, isobutyl, 2-ethylbutyl, 3,3-dimethylbutyl, n-pentyl, isopentyl, neopentyl, tert-pentyl, 1-methylpentyl, 3-methylpentyl, 2-ethylpentyl, 4-methyl-2-pentyl, n-hexyl, 1-methylhexyl, 2-ethylhexyl, 2-butylhexyl, n-heptyl, 1-methylheptyl, 2,2-dimethylheptyl, 2-ethylheptyl, 2-butylheptyl, n-octyl, tert-octyl, vinyl, 1-propenyl, 2-propenyl or ethynyl. In some embodiments of the present application, the carbon number of the aliphatic cycloalkyl group or the aliphatic heterocycloalkyl group is 3 to 30, 3 to 20, or 3 to 10. Non-limiting examples of the aliphatic cycloalkyl group include cyclopentyl, cyclohexyl or cyclobutyl.

[0068] As used in the present application, "hydrocarbyl" refers to a group with a structure of "-O-hydrocarbyl", i.e., a hydrocarbyl group as defined above is connected to other groups via an oxygen atom, and the hydrocarbyl group of the present application may be a straight chain hydrocarbyl group or a branched chain hydrocarbyl group, and the number of carbon atoms of the straight chain hydrocarbyl group or the branched chain hydrocarbyl group is 1 to 10, 1 to 5, or 1 to 3. In some embodiments of the present application, non-limiting examples of the straight chain hydrocarbyl group or the branched chain hydrocarbyl group include methoxy (-O-CH3 or -OMe), ethoxy (-O-CH2CH3 or -OEt) or tert-butoxy (-OC(CH3)3 or -OtBu).

[0069] In existing light-emitting devices, mechanical stress is formed between the light-emitting layer and the electronic functional layer through contact, but the mechanical properties of the mechanical stress are poor and unstable, resulting in the problem of premature separation of the light-emitting layer and the electronic functional layer during the use of the optoelectronic device. Factors causing the separation of the light-emitting layer and the electronic functional layer include but are not limited to the mismatch of the thermal expansion coefficients between the layers and the accumulation of damage during use, thereby reducing the device life of the light-emitting device.

[0070] For QLED, the material of the electronic functional layer is usually metal oxide (such as nano ZnO), which has inherent lattice defects, such as zinc vacancies (VZn), oxygen vacancies (VO), zinc substitution for oxygen (ZnO), and oxygen substitution for zinc (OZn). These lattice defects give metal oxides good charge transport capabilities, but because the electronic functional layer is in contact with the light-emitting layer, the metal oxide in the electronic functional layer will also be in contact with the quantum dots in the light-emitting layer. The oxygen vacancy defects of the metal oxide will cause the quantum dots in contact with it to quench fluorescence, thereby reducing the luminous efficiency of the light-emitting device. It is understandable that if the lattice defects of the metal oxide are too few, it will have a negative impact on the charge transport capability of the metal oxide.

[0071] In addition, the quantum dots in the light-emitting layer are connected to ligands, which have the function of passivating the surface defects of the quantum dots to improve the performance stability of the quantum dots. However, during the operation of the QLED, the ligands on the surface of the quantum dots are easy to fall off, and the detached ligands may drift under the action of the electric field, which has an adverse effect on the chemical stability of the QLED and shortens the service life of the QLED. At least part of the metal oxides in the electronic functional layer are also connected to ligands, such as hydroxyl groups. The ligands on the surface of the metal oxides also have the problem of ligand shedding and drifting, which will also have an adverse effect on the chemical stability of the QLED and further shorten the service life of the QLED.

[0072] Based on this, the embodiment of the present application provides a light emitting device, which can be a positive structure or an inverted structure, such as Figure 1As shown, the light emitting device 10 includes an anode 11, a cathode 12, a light emitting layer 13, an auxiliary layer 14 and an electronic functional layer 15, wherein the anode 11 and the cathode 12 are arranged opposite to each other, the electronic functional layer 15 is arranged between the cathode 12 and the light emitting layer 13, the auxiliary layer 14 is arranged between the electronic functional layer 15 and the light emitting layer 13, and the auxiliary layer 14 includes a connecting group, and the connecting group is a first group of the structure shown in the following general formula (I) and / or a second group of the structure shown in the following general formula (II):

[0073]

[0074] In the general formula (I) and the general formula (II), R1, R2, R5 and R6 are independently selected from one or more combinations of hydrogen, deuterium, tritium, substituted or unsubstituted C1-C10 straight-chain or branched hydrocarbon groups, substituted or unsubstituted C1-C10 straight-chain or branched hydrocarbon groups, substituted or unsubstituted aliphatic cycloalkyl groups having 3 to 30 ring atoms, substituted or unsubstituted aliphatic heterocycloalkyl groups having 3 to 30 ring atoms, substituted or unsubstituted aryl groups having 6 to 30 ring atoms, and substituted or unsubstituted heteroaryl groups having 5 to 30 ring atoms;

[0075] R3, R4, R7 and R8 are independently selected from -(CH2) n - or -CH=CH-, n is a positive integer of 1 to 6.

[0076] In the light-emitting device 10 of the embodiment of the present application, an auxiliary layer 14 is arranged between the electronic functional layer 15 and the light-emitting layer 13. The auxiliary layer 14 includes a connecting group, and the connecting group is respectively connected to the electronic functional layer 15 and the light-emitting layer 13. This can improve the connection tightness between the light-emitting layer 13 and the electronic functional layer 15, reduce the risk of separation of the electronic functional layer 15 from the light-emitting layer 13, and thus effectively improve the device life of the light-emitting device 10; in addition, the connecting group contains a carbon-carbon double bond to provide a high-density electron cloud, so that the electronic functional layer 15 and the light-emitting layer 13 have good charge transfer efficiency, and the high-density electron cloud can also block the injection of excess electrons, ensuring that the light-emitting device 10 has good exciton recombination efficiency, which is beneficial to further improve the luminous efficiency and device life of the light-emitting device 10.

[0077] In some embodiments of the present application, the substituted or unsubstituted C1-C10 straight-chain or branched-chain hydrocarbon group is selected from C1-C3 straight-chain or branched-chain hydrocarbon group; and / or, the substituted or unsubstituted C1-C10 straight-chain hydrocarbonoxy group or branched-chain hydrocarbonoxy group is selected from C1-C3 straight-chain hydrocarbonoxy group or branched-chain hydrocarbonoxy group; and / or, the substituted or unsubstituted aliphatic cycloalkyl group having 3 to 30 ring atoms is selected from aliphatic cycloalkyl group having 3 to 10 ring atoms; and / or, the substituted or unsubstituted aliphatic heterocycloalkyl group having 3 to 30 ring atoms is selected from aliphatic heterocycloalkyl group having 3 to 10 ring atoms; and / or, the substituted or unsubstituted aryl group having 6 to 30 ring atoms is selected from aryl group having 6 to 18 ring atoms; and / or, the substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms is selected from heteroaryl group having 5 to 18 ring atoms.

[0078] In some embodiments of the present application, the linking group is selected from one or more of the following groups:

[0079]

[0080] In the light-emitting device 10 of the application embodiment, the electronic functional layer 15 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 15 is, for example, 10nm to 100nm. The electronic functional layer 15, for example, includes one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 15 including the electron injection layer, the electron transport layer, and the hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 12 than the hole blocking layer; for the electronic functional layer 15 including the electron injection layer and the electron transport layer, the electron injection layer is closer to the cathode 12 than the electron transport layer; for the electronic functional layer 15 including the electron transport layer and the hole blocking layer, the electron transport layer is closer to the cathode 12 than the hole blocking layer. As an example, the electronic functional layer 15 is a single-layer structure, and the electronic functional layer 15 is an electron transport layer.

[0081] In order to further improve the photoelectric performance and device life of the light-emitting device 10, in some embodiments of the present application, the material of the electronic functional layer includes a first inorganic compound, the connecting group connects the first inorganic compound, and the first inorganic compound includes one or more of an undoped first metal oxide, a doped second metal oxide, a II-VI semiconductor material, a III-V semiconductor material, and an I-III-VI semiconductor material. Among them, the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn, and / or the molar percentage of the first doping element in the doped second metal oxide is less than 50%; and / or, the II-VI group semiconductor material is selected from one or more of ZnS, ZnSe and CdS; and / or, the III-V group semiconductor material is selected from one or more of InP and GaP; and / or, the I-III-VI group semiconductor material is selected from one or more of CuInS and CuGaS.

[0082] The doped second metal oxide includes, but is not limited to, one or more of zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and titanium lithium oxide, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0<x≤0.5.

[0083] In some embodiments of the present application, the first inorganic compound is a nanomaterial, and the first inorganic compound may be in the form of nanoparticles, nanorods or nanosheets. When the first inorganic compound is a nanoparticle, the average particle size is 3 nm to 10 nm.

[0084] It can be understood that when the electronic functional layer 15 includes multiple materials and has a multi-layer structure, the multiple materials may all be in the same layer, or respectively in different layers, or partially in the same layer.

[0085] In the light-emitting device 10 of the application embodiment, the light-emitting layer 13 can be a single-layer structure or a multi-layer structure, and the thickness of the light-emitting layer 13 is, for example, 10nm to 100nm. In some embodiments of the present application, the light-emitting device 10 is a QLED, and the material of the light-emitting layer 13 includes quantum dots, and the connecting group connects the quantum dots. Quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and quantum dots include, but are not limited to, one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be 2nm to 20nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 15nm, 20nm, or a value between any two of the foregoing values.

[0086] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots or the material of the shell of the core-shell structure quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, Al As, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots, the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element. For example: CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn (1-x) Se,0 <x<1。

[0087] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0088] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a carboxamidine group, and M is a divalent metal cation, and M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0089] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0090] It should be noted that when the light-emitting device is a QLED, the connecting group connects both the first inorganic compound in the electronic functional layer and the quantum dots in the light-emitting layer, that is, the connecting group serves as a ligand of the first inorganic compound in the side of the electronic functional layer close to the light-emitting layer, and the connecting group also serves as a ligand of the quantum dots in the side of the light-emitting layer close to the electronic functional layer, thereby reducing the number of quantum dots in direct contact with the first inorganic compound or avoiding direct contact between the first inorganic compound and the quantum dots, and reducing the oxygen vacancy defects of the first inorganic compound in the side of the electronic functional layer close to the light-emitting layer, thereby reducing or eliminating the fluorescence quenching effect of the oxygen vacancy defects of the first inorganic compound on the quantum dots, and improving the luminescence efficiency of the light-emitting device; in addition, the first inorganic compound located inside the electronic functional layer still maintains the original lattice defects, giving the electronic functional layer good electron transmission properties.

[0091] It is understood that the surface of the quantum dots located inside the light-emitting layer may also be connected to a first ligand. The first ligand may be a common ligand in the art, including but not limited to C1-C 30 Fatty carboxylic acid ligands, C6~C 30 Aromatic carboxylic acid ligands, C1~C 30 Aliphatic thiol ligands, C6~C 30 Thiol aromatic ligands, C1~C 30 Fatty amine ligands, C6~C 30 Aromatic amine ligands, C1~C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0092] Among them, the fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid and docosahexaenoic acid; the aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid and 1-naphthoic acid. The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecyl mercaptan. The thiol aromatic ligands include, but are not limited to, one or more of benzene mercaptan, triphenylmethyl mercaptan and p-terphenyl-4,4"-dithiol. The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine. The aromatic amine ligands include, but are not limited to, aniline, indenepropylamine, 4-octylaniline and and one or more of benzidine. Aliphatic phosphine ligands include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, aromatic phosphine ligands include but are not limited to one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, aromatic phosphate ligands include but are not limited to one or more of tetraethyl p-xylene diphosphate and diphenylethyl phosphate. Halogen ligands include but are not limited to -Cl, -F, -I or -Br.

[0093] In order to further improve the photoelectric performance and device life of the light-emitting device 10, in some embodiments of the present application, the material of the anode 11 and the material of the cathode 12 are independently selected from one or more of metals, carbon materials and third metal oxides. Among them, the metal includes but is not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg; the carbon material includes but is not limited to one or more of graphite, carbon nanotubes, graphene and carbon fiber; the third metal oxide can be doped or undoped, and the doped third metal oxide includes but is not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) and magnesium-doped zinc oxide (MZO), and the undoped third metal oxide includes but is not limited to one or more of TiO2, SnO2, ZnO and In2O3.

[0094] It should be noted that the anode 11 or the cathode 12 may also be a composite electrode, which has a structure similar to a "sandwich", wherein the materials of the upper and lower layers are respectively doped or undoped second metal oxides, and the material of the middle layer is a metal, examples of which are one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thicknesses of the anode 11 and the cathode 12 are, for example, independently selected from 20 nm to 300 nm.

[0095] In order to promote the electron-hole transfer balance, thereby further improving the photoelectric performance and device life of the light emitting device 10, in some embodiments of the present application, continue to refer to Figure 1 The light-emitting device 10 further includes a hole functional layer 16 , which is disposed between the light-emitting layer 13 and the anode 11 .

[0096] The hole functional layer 16 may be a single-layer structure or a multi-layer structure. The thickness of the hole functional layer 16 is, for example, 10 nm to 100 nm. The hole functional layer 16 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 16 including the hole injection layer, the hole transport layer, and the electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 11 than the electron blocking layer; for the hole functional layer 16 including the hole transport layer and the electron blocking layer, the hole transport layer is closer to the anode 11 than the electron blocking layer. As an example, continue to refer to Figure 1 The hole functional layer 16 is composed of a hole injection layer 161 and a hole transport layer 162 which are stacked together. The hole injection layer 161 is closer to the anode 11 than the hole transport layer 162 .

[0097] The material of the hole functional layer 16 is, but is not limited to, a non-doped second inorganic compound, a doped third inorganic compound, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), polypyrrole (CAS No. 30604-81-0), 3-hexyl substituted polythiophene (CAS No. 104934-50-1), poly (9-vinyl carbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis (9-carbazole) biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N,N-bis (4-methylphenyl) aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl) diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)](CAS No. 223569-31-1), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine(CAS No. 124729-98-2), 4,4',4"-tri(carbazol-9-yl)triphenylamine(abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tri(2-naphthylphenylamino)triphenylamine(CAS No. 185690-41-9), N,N'-diphenyl-N , N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviated as Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,One or more of N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9) and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-omeTAD, CAS No. 207739-72-8).

[0098] The non-doped second inorganic compound is selected from one or more of graphene, C60, nickel oxide (e.g., NiO), molybdenum oxide (e.g., MoO3), tungsten oxide (e.g., WO3), vanadium oxide (e.g., V2O5), P-type gallium nitride, chromium oxide (e.g., Cr2O3), copper oxide (e.g., CuO or Cu2O), copper sulfide (e.g., CuS), molybdenum sulfide (e.g., MoS2) and tungsten sulfide (e.g., WS2); and / or the doped third inorganic compound is a main inorganic compound doped with the second doping element. The main compound is selected from one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), P-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2) and tungsten sulfide (such as WS2), and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0099] It is understood that when the hole functional layer 16 includes multiple materials and the hole functional layer 16 is a multi-layer structure, the multiple materials may all be in the same layer, or in different layers, or partially in the same layer. For example, when the first hole functional layer 16 is composed of a stacked hole injection layer and a hole transport layer, the material of the hole functional layer 16 includes PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers, the material of the hole injection layer is PEDOT:PSS, and the material of the hole transport layer is TFB.

[0100] The embodiment of the present application further provides a method for preparing a light-emitting device, which can be used to prepare any of the light-emitting devices described above. The method for preparing the light-emitting device comprises the following steps:

[0101] S1. providing a bottom electrode and forming a light-emitting layer on one side of the bottom electrode;

[0102] S2. Form a top electrode on a side of the light-emitting layer away from the bottom electrode.

[0103] Wherein, when the light-emitting device is a positive structure, the bottom electrode is an anode and the top electrode is a cathode, and between step S1 and step S2, the method for preparing the light-emitting device further includes the steps of: depositing a solution containing auxiliary functional materials on the side of the light-emitting layer away from the bottom electrode, so that at least part of the auxiliary functional materials are connected to the light-emitting layer, and then forming an electronic functional layer on the side of the light-emitting layer where the solution is deposited, and an auxiliary layer is formed between the electronic functional layer and the light-emitting layer. Alternatively, when the light-emitting device is an inverted structure, the bottom electrode is a cathode and the top electrode is an anode, and before the step of forming the light-emitting layer on one side of the bottom electrode, the method for preparing the light-emitting device further includes the steps of: forming an electronic functional layer on one side of the bottom electrode, and then depositing a solution containing auxiliary functional materials on the side of the electronic functional layer away from the bottom electrode, so that at least part of the auxiliary functional materials are connected to the electronic functional layer; after forming the light-emitting layer on the side of the electronic functional layer where the solution is deposited, an auxiliary layer is formed between the electronic functional layer and the light-emitting layer. The structural composition of the anode, cathode, light-emitting layer, electronic functional layer and auxiliary layer are all described above.

[0104] The auxiliary functional material comprises a compound having a structure represented by the following general formula (III) and / or a compound having a structure represented by the following general formula (IV):

[0105]

[0106] R1 to R8 are all as described above.

[0107] In the preparation method of the light-emitting device of the embodiment of the present application, the auxiliary functional material contains two thiol groups (-SH) and at least one carbon-carbon double bond, and has a special electron cloud structure and sulfur atom coordination characteristics. For a light-emitting device with an upright structure, after a solution containing the auxiliary functional material is deposited on one side of the light-emitting layer, the sulfur atom in one thiol group in the auxiliary functional material will be connected to one side of the light-emitting layer in the form of a coordination bond, for example, coordinated with the metal atom of the quantum dot in the light-emitting layer. Based on the steric hindrance effect, the other thiol group in the auxiliary functional material will not adhere to the surface of the light-emitting layer. After the electronic functional layer is formed, the sulfur atom in the other thiol group will be connected to the surface of the light-emitting layer in the form of a coordination bond. The auxiliary layer is connected to the side of the electronic functional layer close to the light-emitting layer, for example, connected to the oxygen vacancies in the electronic functional layer, thereby forming an auxiliary layer between the light-emitting layer and the electronic functional layer. Similarly, for an inverted structure light-emitting device, after a solution containing auxiliary functional materials is deposited on one side of the electronic functional layer, the sulfur atom in a thiol group in the auxiliary functional material will be connected to the side of the electronic functional layer in the form of a coordination bond. After the light-emitting layer is formed, the sulfur atom in another thiol group will be connected to the side of the light-emitting layer close to the electronic functional layer in the form of a coordination bond, thereby forming an auxiliary layer between the light-emitting layer and the electronic functional layer, effectively improving the photoelectric performance and device life of the light-emitting device.

[0108] In the method for preparing the light-emitting device of the embodiment of the present application, the deposition method of the solution includes but is not limited to one or more of spin coating, printing, scraping, dip pulling, immersion, spraying, rolling, casting, slit coating and strip coating.

[0109] In order to further improve the photoelectric performance and device life of the manufactured light-emitting device, in some embodiments of the present application, the auxiliary functional material is selected from one or more of a compound with a CAS number of 34725-64-9, a compound with a CAS number of 54462-80-5, a compound with a CAS number of 111900-12-0, a compound with a CAS number of 122913-78-4, and a compound with a CAS number of 5853-57-6.

[0110] In order to further improve the device life of the manufactured light-emitting device, in some embodiments of the present application, the mass of the auxiliary functional material accounts for 3% to 5% of the total mass of the solution, for example, 3%, 4%, 5% or a value between any two of the foregoing percentages; and / or, the deposition thickness of the solution is 5nm to 10nm, for example, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm or a value between any two of the foregoing values.

[0111] In order to further improve the device life of the manufactured light-emitting device, in some embodiments of the present application, when the light-emitting device is a positive structure, after the step of depositing a solution containing auxiliary functional materials on the side of the light-emitting layer away from the bottom electrode and before the step of forming the electronic functional layer, the method for preparing the light-emitting device further includes the step of removing the auxiliary functional materials not connected to the light-emitting layer. Alternatively, when the light-emitting device is an inverted structure, after the step of depositing a solution containing auxiliary functional materials on the side of the electronic functional layer away from the bottom electrode and before the step of forming the light-emitting layer, the method for preparing the light-emitting device further includes the step of removing the auxiliary functional materials not connected to the electronic functional layer. Among them, the method for removing auxiliary functional materials that are not connected to the electronic functional layer or the light-emitting layer, for example, includes the steps of: using a first solvent to clean the side of the electronic functional layer or the light-emitting layer on which the solution is deposited; further, after completing the cleaning step, the method for preparing the light-emitting device may also include the steps of: drying the side of the electronic functional layer or the light-emitting layer on which the solution is deposited to remove the residual first solvent; the drying treatment includes but is not limited to one or more of natural air drying, heat treatment, vacuum drying, laser annealing, electron beam annealing, atomic annealing and microwave irradiation annealing.

[0112] In some embodiments of the present application, the solvent of the solution is a second solvent, and the first solvent and the second solvent are independently selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds, wherein alkanes include but are not limited to one or more of nonane, decane, dodecane, terpane, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, aromatic hydrocarbons include but are not limited to one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride, alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, ether compounds include but are not limited to ethylene glycol monomethyl ether, furan compounds include but are not limited to tetrahydrofuran, pyridine compounds include but are not limited to pyridine, and amide compounds include but are not limited to N,N-dimethylformamide. As an example, the first solvent and / or the second solvent is selected from methanol.

[0113] In order to promote the electron-hole transfer balance, thereby further improving the photoelectric performance and device life of the manufactured light-emitting device, in some embodiments of the present application, when the light-emitting device is of an upright structure, before the step of forming the light-emitting layer on one side of the bottom electrode, the method for preparing the light-emitting device further includes the steps of: forming a hole functional layer on one side of the bottom electrode; the light-emitting layer is formed on the side of the hole functional layer away from the bottom electrode; or, when the light-emitting device is of an inverted structure, between step S1 and step S2, the method for preparing the light-emitting device further includes the steps of: forming a hole functional layer on the side of the light-emitting layer away from the bottom electrode; and forming a top electrode on the side of the hole functional layer away from the light-emitting layer.

[0114] It should be noted that, in addition to the auxiliary layer, the preparation methods of other film layers in the light-emitting device include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction, anodization, electrolytic deposition and co-precipitation. Physical methods include but are not limited to physical plating and solution methods. Physical plating methods include but are not limited to thermal evaporation, electron beam evaporation, magnetron sputtering, multi-arc ion plating, physical vapor deposition, atomic layer deposition and pulsed laser deposition. One or more of the solution method includes but is not limited to spin coating, printing, doctor blade coating, dip-pull method, immersion method, spray coating, roll coating, casting, slit coating and strip coating.

[0115] After the preparation of each film layer of the light-emitting device is completed, a packaging process is required. The packaging process can be performed by common machine packaging or manual packaging. In the packaging process environment, the oxygen content and water content are both lower than 0.1ppm to ensure the stability of the light-emitting device. In order to further improve the performance stability of the light-emitting device, in some embodiments of the present application, epoxy resin is used for packaging.

[0116] The embodiment of the present application also provides an electronic device, the electronic device includes any one of the light-emitting devices described above, or the electronic device includes a light-emitting device prepared by any one of the methods for preparing the light-emitting device described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical machine, a camera, a game console, a digital camera, a car navigation system, an electronic billboard, an ATM, a smart bracelet, a smart watch, a virtual reality (VR) device or a wearable device.

[0117] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0118] Example 1

[0119] This embodiment provides a light emitting device and a method for preparing the same. The light emitting device is a quantum dot light emitting diode of a positive structure, such as Figure 1 As shown, from bottom to top, the light emitting device 10 includes an anode 11, a hole functional layer 16, a light emitting layer 13, an auxiliary layer 14, an electronic functional layer 15 and a cathode 12 which are stacked in sequence, wherein the hole functional layer 16 is composed of a stacked hole injection layer 161 and a hole transport layer 162, the hole injection layer 161 is closer to the anode 11 than the hole transport layer 162, and the electronic functional layer 15 is a single-layer structure. The light emitting area of ​​the light emitting device is 2 cm long × 2 cm wide.

[0120] The materials and thicknesses of the various layers in the light emitting device 10 are as follows:

[0121] The material of the anode 11 is ITO, and the thickness of the anode 11 is 120 nm;

[0122] The material of the cathode 12 is Ag, and the thickness of the cathode 12 is 60 nm;

[0123] The material of the light-emitting layer 13 is CdSeS (core) / ZnS (shell) quantum dots, the CdSeS / ZnS quantum dots are connected with oleic acid ligands, the light-emitting color is green, and the thickness of the light-emitting layer 13 is 70 nm;

[0124] The material of the hole injection layer 161 is PEDOT:PSS, and the thickness of the hole injection layer 161 is 80 nm;

[0125] The material of the hole transport layer 162 is TFB, and the thickness of the hole transport layer 162 is 70 nm;

[0126] The material of the electronic functional layer 15 is nano ZnO (average particle size is 5 nm), and the thickness of the electronic functional layer 15 is 50 nm;

[0127] The auxiliary layer 14 includes a connecting group having a structure shown in the following formula (1.1):

[0128]

[0129] The method for preparing the light emitting device in this embodiment includes the following steps:

[0130] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, ultrasonically clean with acetone for 15 minutes, ultrasonically clean with ethanol for 15 minutes, and ultrasonically clean with isopropanol for 15 minutes, and after drying, perform a UV-ozone surface treatment for 15 minutes to obtain a substrate including an anode;

[0131] S1.2, in an air environment at room temperature and pressure, spin-coating a 2.8% PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then heat-treating at 150°C to solidify the film to obtain a hole injection layer;

[0132] S1.3, in an argon environment at room temperature and pressure, spin-coat a 6.5 mg / mL TFB-chlorobenzene solution on the side of the hole injection layer away from the anode, and then heat-treat at 170°C to solidify the film to obtain a hole transport layer;

[0133] S1.4. In an argon environment at room temperature and pressure, a CdSeS / ZnS quantum dot-n-octane solution with a concentration of 30 mg / mL is spin-coated on the side of the hole transport layer away from the hole injection layer, and then subjected to a constant temperature heat treatment at 80°C to solidify the film to obtain a light-emitting layer;

[0134] S1.5. In an argon environment at room temperature and pressure, a solution containing an auxiliary functional material is spin-coated on the side of the light-emitting layer away from the hole transport layer. The auxiliary functional material is a compound with a CAS number of 34725-64-9, and the solvent is methanol. The mass of the auxiliary functional material accounts for 5% of the total mass of the solution. The spin coating thickness is 5nm, and the solution is allowed to stand for 10 minutes. Subsequently, a nano ZnO-ethanol solution with a concentration of 30 mg / mL is spin-coated on the side of the light-emitting layer where the solution is spin-coated, and then the solution is placed at 80°C for constant temperature heat treatment to solidify the film to obtain an electronic functional layer, and an auxiliary layer is formed between the electronic functional layer and the light-emitting layer.

[0135] S1.6, place the prefabricated device after step S1.5 in an atmosphere with a pressure of 4×10 -6 In the mbar evaporation chamber, Ag is thermally evaporated on the side of the electronic functional layer away from the light-emitting layer through a mask plate to obtain a cathode, which is then packaged to obtain a light-emitting device.

[0136] Among them, the compound with CAS No. 34725-64-9 has the structure shown in the following formula (1.2):

[0137]

[0138] Example 2

[0139] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the content of the connecting group in the auxiliary layer is different.

[0140] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the "mass of the auxiliary functional material accounts for 5% of the total mass of the solution" in step S1.5 is replaced by "the mass of the auxiliary functional material accounts for 10% of the total mass of the solution".

[0141] Example 3

[0142] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the connecting group in the auxiliary layer has a structure shown in the following formula (3.1).

[0143]

[0144] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the "auxiliary functional material is a compound with CAS number 34725-64-9" in step S1.5 is replaced by "the auxiliary functional material is a compound with CAS number 54462-80-5".

[0145] Among them, the compound with CAS No. 54462-80-5 has the structure shown in the following formula (3.2):

[0146]

[0147] Example 4

[0148] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the connecting group in the auxiliary layer has a structure shown in the following formula (4.1).

[0149]

[0150] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the "auxiliary functional material is a compound with CAS number 34725-64-9" in step S1.5 is replaced by "the auxiliary functional material is a compound with CAS number 111900-12-0".

[0151] Among them, the compound with CAS No. 111900-12-0 has the structure shown in the following formula (4.2):

[0152]

[0153] Example 5

[0154] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the connecting group in the auxiliary layer has a structure shown in the following formula (5.1).

[0155]

[0156] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the "auxiliary functional material is a compound with CAS number 34725-64-9" in step S1.5 is replaced by "the auxiliary functional material is a compound with CAS number 122913-78-4".

[0157] Among them, the compound with CAS No. 122913-78-4 has the structure shown in the following formula (5.2):

[0158]

[0159] Example 6

[0160] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the connecting group in the auxiliary layer has a structure shown in the following formula (6.1).

[0161]

[0162] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: the "auxiliary functional material is a compound with CAS number 34725-64-9" in step S1.5 is replaced by "the auxiliary functional material is a compound with CAS number 5853-57-6".

[0163] Among them, the compound with CAS No. 5853-57-6 has the structure shown in the following formula (6.2):

[0164]

[0165] Comparative Example

[0166] This comparative example provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Example 1, the light-emitting device in this comparative example is different only in that the auxiliary layer is omitted.

[0167] Compared with the preparation method of the light-emitting device in Example 1, the only difference in the preparation method of the light-emitting device in this comparative example is that step S1.5 is replaced by "under an argon environment at room temperature and pressure, spin-coating a nano ZnO-ethanol solution with a concentration of 30 mg / mL on the side of the light-emitting layer away from the hole transport layer, and then placing it at 80°C for constant temperature heat treatment to solidify into a film to obtain an electronic functional layer."

[0168] Experimental example

[0169] The performance of the light-emitting devices packaged in Examples 1 to 6 and the comparative example was tested respectively, and the voltage, current, brightness, luminescence spectrum and other parameters of each light-emitting device were obtained by detecting and obtaining key parameters such as the maximum external quantum efficiency and power efficiency, and the device life of each light-emitting device was tested using IVL optical characteristic measurement equipment (including Ocean Optics USB2000, LabView-controlled QE-PRO spectrometer, Keithley2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various related connecting wires and data cards, efficiency test cassettes and data acquisition systems, etc.). Then, key parameters such as the maximum external quantum efficiency and power efficiency were calculated, and the device life of each light-emitting device was tested using a life test equipment.

[0170] The current efficiency test method is: intermittently collect the brightness value of the light-emitting device in the range of 0V to 8V, and collect the light-emitting area of ​​0.0314cm 2 The initial voltage value for collecting brightness is 3V, and the voltage is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the light-emitting device under the collection conditions, and the current efficiency (CE@5000nit, cd / A) at a brightness of 5000nit is obtained.

[0171] The device life test method comprises the following steps: 2 ), a 128-channel QLED lifetime test system was used to analyze the electroluminescent lifetime of each light-emitting device, and the time required for each light-emitting device to decay from the maximum brightness to 95% (T95, h) was recorded. The time required for the brightness of each light-emitting device to decay from 100% to 95% at a brightness of 1000nit was calculated through the attenuation fitting formula (T95@1000nit, h).

[0172] During the performance test, three parallel samples were set for each light emitting device, and the average value of the three parallel samples was taken for each performance test parameter. The performance test results of each light emitting device under 25°C environment are shown in Table 1 below:

[0173] Table 1 Summary of performance test results of packaged light emitting devices in Examples 1 to 6 and Comparative Examples

[0174]

[0175]

[0176] It can be seen from Table 1 that the comprehensive performance of the light-emitting devices in Examples 1 to 6 has significant advantages over the light-emitting devices in the comparative examples, which is specifically manifested in that the luminous efficiency and device life of the light-emitting devices in Examples 1 to 6 are better than those of the light-emitting devices in the comparative examples. Taking the embodiment as an example, the T95@1000nit of the light-emitting device in Example 1 is 1.73 times that of the light-emitting device in the comparative example, and the CE@5000nit of the light-emitting device in Example 1 is 1.31 times that of the light-emitting device in the comparative example.

[0177] This shows that an auxiliary layer is arranged between the electronic functional layer and the light-emitting layer, and the auxiliary layer includes a connecting group, and the connecting group is connected to the electronic functional layer and the light-emitting layer respectively, which can improve the connection tightness between the light-emitting layer and the electronic functional layer, and reduce the number of quantum dots directly contacting the ZnO, reduce the oxygen vacancy defects of the ZnO on the side of the electronic functional layer close to the light-emitting layer, and reduce the fluorescence quenching effect of the oxygen vacancy defects of the ZnO on the quantum dots. The ZnO located inside the electronic functional layer still maintains the original lattice defects, giving the electronic functional layer good electron transport performance; in addition, the connecting group contains a carbon-carbon double bond to provide a high-density electron cloud, so that the electronic functional layer and the light-emitting layer have good charge transfer efficiency, and the high-density electron cloud can also block the injection of excess electrons, ensuring that the light-emitting device has good exciton recombination efficiency, thereby improving the luminous efficiency and device life of the light-emitting device.

[0178] The above is a detailed introduction to a light-emitting device, a method for preparing a light-emitting device, and an electronic device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting device, characterized in that: include: An anode and a cathode arranged opposite to each other; A light-emitting layer is disposed between the anode and the cathode; An electronic functional layer, disposed between the cathode and the light-emitting layer; as well as An auxiliary layer, disposed between the electronic functional layer and the light-emitting layer; Wherein, the auxiliary layer includes a connecting group, and the connecting group is a first group of the structure shown in the following general formula (I) and / or a second group of the structure shown in the following general formula (II): Wherein, * represents a connecting bond; the connecting group is connected to the electronic functional layer and the light-emitting layer respectively; R1, R2, R5 and R6 are independently selected from hydrogen, deuterium, tritium, substituted or unsubstituted C1-C10 straight chain hydrocarbon group or branched hydrocarbon group, substituted or unsubstituted C1-C10 straight chain hydrocarbonoxy group or branched hydrocarbonoxy group, substituted or unsubstituted aliphatic cycloalkyl group having 3-30 ring atoms, substituted or unsubstituted aliphatic heterocycloalkyl group having 3-30 ring atoms, substituted or unsubstituted aryl group having 6-30 ring atoms, substituted or unsubstituted heteroaryl group having 5-30 ring atoms; R3, R4, R7 and R8 are independently selected from -(CH2) n - or -CH=CH-, n is a positive integer of 1 to 6.

2. The light emitting device according to claim 1, characterized in that: The substituted or unsubstituted C1-C10 straight-chain or branched-chain hydrocarbon group is selected from C1-C3 straight-chain or branched-chain hydrocarbon groups; and / or The substituted or unsubstituted C1-C10 straight chain alkyloxy or branched chain alkyloxy is selected from C1-C3 straight chain alkyloxy or branched chain alkyloxy; and / or The substituted or unsubstituted aliphatic cycloalkyl group having 3 to 30 ring atoms is selected from aliphatic cycloalkyl groups having 3 to 10 ring atoms; and / or The substituted or unsubstituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms is selected from aliphatic heterocyclic hydrocarbon groups having 3 to 10 ring atoms; and / or The substituted or unsubstituted aryl group having 6 to 30 ring atoms is selected from aryl groups having 6 to 18 ring atoms; and / or The substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms is selected from heteroaryl groups having 5 to 18 ring atoms.

3. The light emitting device according to claim 1, characterized in that: The linking group is selected from one or more of the following groups:

4. The light emitting device according to claim 1, characterized in that: The material of the electronic functional layer comprises a first inorganic compound, the connecting group connects the first inorganic compound, and the first inorganic compound comprises one or more of a non-doped first metal oxide, a doped second metal oxide, a II-VI semiconductor material, a III-V semiconductor material, and a I-III-VI semiconductor material; Wherein, the undoped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn, and / or the molar percentage of the first doping element in the doped second metal oxide is less than 50%; and / or, the II-VI group semiconductor material is selected from one or more of ZnS, ZnSe and CdS; and / or, the III-V group semiconductor material is selected from one or more of InP and GaP; and / or, the I-III-VI group semiconductor material is selected from one or more of CuInS and CuGaS; and / or The material of the light-emitting layer comprises quantum dots, and the connecting group connects the quantum dots; the quantum dots are selected from one or more of single-component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots; the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots and the material of the shell of the core-shell structure quantum dots are independently selected from at least one of II-VI compounds, III-V compounds, IV-VI compounds or I-III-VI compounds, wherein the II-VI compounds are selected from CdS, CdSe, CdTe, ZnS, ZnSe, Zn ...Se, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnS, ZnS, ZnSe, ZnTe, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, ZnS, Z One or more of: nO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, wherein the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNA s, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAl The inorganic perovskite quantum dot is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the inorganic perovskite quantum dot is selected from one or more of CuInS, CuInSe and AgInS; and / or the inorganic perovskite quantum dot has a general structural formula of AMX3, wherein A is Cs + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is an organic amine cation.

5. The light emitting device according to claim 1, characterized in that: The material of the anode and the material of the cathode independently contain one or more of a metal, a carbon material and a third metal oxide; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the third metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3; and / or The light-emitting device further comprises a hole functional layer, which is arranged between the anode and the light-emitting layer. The material of the hole functional layer comprises a non-doped second inorganic compound, a doped third inorganic compound, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butyl) phenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1- The following are some of the following: N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9, 9'-spirobifluorene; wherein the non-doped second inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide; and / or, the doped third inorganic compound is a main inorganic compound doped with a second doping element, the main inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

6. A method for preparing a light emitting device, characterized in that: The steps include: providing a bottom electrode, and forming a light-emitting layer on one side of the bottom electrode; and forming a top electrode on a side of the light-emitting layer away from the bottom electrode; Wherein, when the light-emitting device is of a positive structure, the bottom electrode is an anode and the top electrode is a cathode, after the step of forming the light-emitting layer and before the step of forming the top electrode, the preparation method further comprises the steps of: depositing a solution containing an auxiliary functional material on a side of the light-emitting layer away from the bottom electrode so that at least part of the auxiliary functional material is connected to the light-emitting layer, and then forming an electronic functional layer on a side of the light-emitting layer where the solution is deposited, and an auxiliary layer is formed between the electronic functional layer and the light-emitting layer; or, When the light-emitting device is an inverted structure, the bottom electrode is a cathode and the top electrode is an anode, and before the step of forming a light-emitting layer on one side of the bottom electrode, the preparation method further comprises the steps of: forming an electronic functional layer on one side of the bottom electrode, and then depositing a solution containing an auxiliary functional material on a side of the electronic functional layer away from the bottom electrode, so that at least part of the auxiliary functional material is connected to the electronic functional layer; after forming the light-emitting layer on the side of the electronic functional layer where the solution is deposited, an auxiliary layer is formed between the electronic functional layer and the light-emitting layer; Wherein, the auxiliary functional material comprises a compound having a structure represented by the following general formula (III) and / or a compound having a structure represented by the following general formula (IV): R1, R2, R5 and R6 are independently selected from hydrogen, deuterium, tritium, substituted or unsubstituted C1-C10 straight chain hydrocarbon group or branched hydrocarbon group, substituted or unsubstituted C1-C10 straight chain hydrocarbonoxy group or branched hydrocarbonoxy group, substituted or unsubstituted aliphatic cycloalkyl group having 3-30 ring atoms, substituted or unsubstituted aliphatic heterocycloalkyl group having 3-30 ring atoms, substituted or unsubstituted aryl group having 6-30 ring atoms, substituted or unsubstituted heteroaryl group having 5-30 ring atoms; R3, R4, R7 and R8 are independently selected from -(CH2) n - or -CH=CH-, n is a positive integer of 1 to 6.

7. The preparation method according to claim 6, characterized in that: The mass of the auxiliary functional material accounts for 3% to 5% of the total mass of the solution; and / or The deposition thickness of the solution is 5nm to 10nm; and / or The substituted or unsubstituted C1-C10 straight-chain or branched-chain hydrocarbon group is selected from C1-C3 straight-chain or branched-chain hydrocarbon groups; and / or The substituted or unsubstituted C1-C10 straight chain alkyloxy or branched chain alkyloxy is selected from C1-C3 straight chain alkyloxy or branched chain alkyloxy; and / or The substituted or unsubstituted aliphatic cycloalkyl group having 3 to 30 ring atoms is selected from aliphatic cycloalkyl groups having 3 to 10 ring atoms; and / or The substituted or unsubstituted aliphatic heterocyclic hydrocarbon group having 3 to 30 ring atoms is selected from aliphatic heterocyclic hydrocarbon groups having 3 to 10 ring atoms; and / or The substituted or unsubstituted aryl group having 6 to 30 ring atoms is selected from aryl groups having 6 to 18 ring atoms; and / or The substituted or unsubstituted heteroaryl group having 5 to 30 ring atoms is selected from heteroaryl groups having 5 to 18 ring atoms.

8. The preparation method according to claim 6, characterized in that: The auxiliary functional material is selected from one or more of the following compounds:

9. The preparation method according to claim 6, characterized in that: When the light-emitting device is of a positive structure, after the step of depositing a solution containing an auxiliary functional material on a side of the light-emitting layer away from the bottom electrode and before the step of forming the electronic functional layer, the preparation method further comprises the steps of: removing the auxiliary functional material not connected to the light-emitting layer; Alternatively, when the light-emitting device is an inverted structure, after the step of depositing a solution containing auxiliary functional materials on a side of the electronic functional layer away from the bottom electrode and before the step of forming the light-emitting layer, the preparation method further includes the step of removing the auxiliary functional materials that are not connected to the electronic functional layer.

10. An electronic device, characterized in that: The invention comprises a light-emitting device as claimed in any one of claims 1 to 5, or a light-emitting device manufactured by the manufacturing method as claimed in any one of claims 6 to 9.

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