Display panel and manufacturing method thereof

Abstract

The invention provides a display panel and a manufacturing method of the display panel, the display panel comprises a substrate and a driving circuit layer, the driving circuit layer is arranged above the substrate, the driving circuit layer comprises at least one conductive layer, the conductive layer comprises a first conductive part and a second conductive part, the second conductive part is arranged on the upper surface of the first conductive part, and the first conductive part is arranged on the upper surface of the second conductive part. In the etching process, the second conductive part can be etched off preferentially, and the first conductive part can be etched from the gap of the second conductive part, so that the outline of the conductive layer after etching can be regulated and controlled by regulating and controlling the etching selection ratio of the first conductive part and the second conductive part, the type of etching liquid does not need to be changed, production equipment does not need to be added, and the production efficiency is improved. Therefore, the production cost of the display panel can be reduced.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a method for manufacturing the display panel. Background Art

[0002] Currently, in order to reduce production costs, wet etching process is generally used to etch metal patterns. The key to this process is to finely control the chemical composition of the etching solution to achieve customization of the metal pattern contour after etching. This method is not only time-consuming, but also relatively difficult to implement in terms of technology.

[0003] In the manufacture of display panels, the metal patterns on different functional film layers have different requirements for the profile. Specifically, the light shielding layer tends to adopt a low slope angle profile design to prevent subsequent film layers from breaking in the slope angle area, thereby ensuring structural stability. On the contrary, the source and drain layers require a higher slope angle profile to reduce the line width and the area occupied by the metal pattern, thereby improving the resolution of the display panel and optimizing the display effect. In order to meet these diverse profile requirements, traditional practices often require frequent changes in the type of etching solution, which undoubtedly increases the cost of material procurement, and also puts forward more diverse requirements for production equipment, increasing the burden of equipment investment and maintenance, resulting in a significant increase in the production cost of display panels.

[0004] Therefore, it is necessary to provide a display panel and a method for manufacturing the display panel to improve this defect. Summary of the invention

[0005] The embodiments of the present application provide a display panel and a method for manufacturing the display panel, which can reduce production costs.

[0006] In order to achieve the above object, according to a first aspect of the present application, a display panel is provided, comprising: substrate; A driving circuit layer, disposed above the substrate, the driving circuit layer comprising at least one conductive layer, the conductive layer comprising a first conductive portion and a second conductive portion, the first conductive portion being disposed above the substrate, and the second conductive portion being disposed on an upper surface of the first conductive portion; Wherein, the upper surface width of the first conductive portion is smaller than the bottom surface width.

[0007] Optionally, the conductive layer includes a light shielding layer, a source-drain electrode layer and a gate layer, the gate layer is arranged on a side of the light shielding layer away from the substrate, and the source-drain electrode layer is arranged on a side of the gate layer away from the light shielding layer; Among them, the angle between the side surface and the bottom surface of the first conductive part is set as the slope angle, the slope angle of the first conductive part of the gate layer is greater than the slope angle of the first conductive part of the light shielding layer, the slope angle of the first conductive part of the source and drain layer is greater than the slope angle of the first conductive part of the light shielding layer, and the slope angle of the first conductive part of the gate layer is less than the slope angle of the first conductive part of the source and drain layer.

[0008] Optionally, an etching selectivity ratio of the second conductive portion is greater than an etching selectivity ratio of the first conductive portion.

[0009] Optionally, the greater the thickness of the second conductive portion, the smaller the slope angle of the first conductive portion.

[0010] Optionally, the side surface of the first conductive portion is concave.

[0011] Optionally, the material of the second conductive part includes metal oxide or alloy.

[0012] Optionally, the second conductive part is made of metal oxide or alloy.

[0013] Optionally, the first conductive part has a first material, and the second conductive part has an alloy composed of a second material and an etching control element; Among them, the first material is metal or alloy, the second material is the same as the first material, and the etching regulating element includes at least one metal element.

[0014] Optionally, the atomic percentage of the etching regulating element in the second conductive portion is greater than or equal to 5% and less than or equal to 50%.

[0015] Optionally, the first material is selected from one or more combinations of copper, aluminum, molybdenum, titanium and silver, and the etching regulating element is selected from one or more combinations of molybdenum, manganese, magnesium, aluminum, tungsten, titanium and zinc.

[0016] According to a second aspect of the present application, a method for manufacturing a display panel is provided, for manufacturing the display panel as described above, the method for manufacturing the display panel comprising the following steps: forming a first conductive material layer over the substrate; forming a second conductive material layer on the upper surface of the first conductive material layer, wherein the etching selectivity of the second conductive material layer is greater than the etching selectivity of the first conductive material layer; The first conductive material layer and the second conductive material layer are etched to form a first conductive portion and a second conductive portion, wherein the width of the upper surface of the first conductive portion is smaller than the width of the bottom surface.

[0017] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a display panel and a method for manufacturing a display panel, wherein the display panel includes a substrate and a driving circuit layer, wherein the driving circuit layer is arranged above the substrate, and wherein the driving circuit layer includes at least one conductive layer, wherein the conductive layer includes a first conductive part and a second conductive part, wherein the second conductive part is arranged on the upper surface of the first conductive part, and during the etching process, the second conductive part can be preferentially etched off from the side, and the first conductive part can be etched from the gap of the second conductive part so that the upper surface width of the first conductive part is smaller than the bottom surface width, thereby adjusting the profile of the conductive layer after etching by adjusting the etching selectivity ratio of the first conductive part and the second conductive part, without changing the type of etching solution or adding production equipment, thereby reducing the production cost of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 A schematic diagram of the film layer structure of a display panel provided in an embodiment of the present application; Figure 2 A schematic diagram of the structure of another display panel provided in an embodiment of the present application; Figure 3 A schematic diagram of the structure of another display panel provided in an embodiment of the present application; Figure 4 A schematic diagram of the structure of another display panel provided in an embodiment of the present application; Figure 5 A schematic diagram of the structure of another display panel provided in an embodiment of the present application; Figure 6 A flow chart of a method for manufacturing a display panel provided in an embodiment of the present application; Figures 7a to 7d A schematic diagram of a method for manufacturing a display panel provided in an embodiment of the present application; Figure 8 A schematic diagram of the structure of a display device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0019] The following descriptions of the embodiments are made with reference to the attached drawings to illustrate specific embodiments that the present application may be implemented in. The directional terms mentioned in the present application, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., are only with reference to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present application, rather than to limit the present application. In the drawings, units with similar structures are represented by the same reference numerals.

[0020] The present application is further described below in conjunction with the accompanying drawings and specific embodiments.

[0021] An embodiment of the present application provides a display panel, which includes a substrate and a driving circuit layer, wherein the driving circuit layer is arranged above the substrate, the driving circuit layer includes at least one conductive layer, the conductive layer includes a first conductive part and a second conductive part, the second conductive part is arranged on the upper surface of the first conductive part, and the upper surface width of the first conductive part is smaller than the bottom surface width.

[0022] In the embodiment of the present application, during the etching process, the second conductive part can be preferentially etched off from the side, and the first conductive part can be etched from the gap of the second conductive part so that the upper surface width of the first conductive part is smaller than the bottom surface width, so that the profile of the conductive layer after etching can be regulated by adjusting the etching selectivity of the first conductive part and the second conductive part, without changing the type of etching solution or adding production equipment, thereby reducing the production cost of the display panel.

[0023] Combination Figure 1 As shown, Figure 1 A schematic diagram of the film structure of a display panel provided in an embodiment of the present application, wherein the display panel includes a substrate 1 and a driving circuit layer 2, wherein the driving circuit layer 2 is disposed on the substrate 1. The driving circuit layer 2 includes at least one conductive layer 21, wherein the conductive layer 21 is disposed on the substrate 1. The conductive layer 21 includes a first conductive portion 211 and a second conductive portion 212, wherein the first conductive portion 211 is disposed on the substrate 1, and the second conductive portion 212 is disposed on the upper surface 211a of the first conductive portion 211.

[0024] In the embodiment of the present application, the etching selectivity of the second conductive part 212 is greater than the etching selectivity of the first conductive part 211, that is, in the same etching solution, the etching rate of the second conductive part 212 is greater than the etching rate of the first conductive part 211. During the etching process, the second conductive part 212 can be preferably etched off from the side, and the first conductive part 211 can be etched from the gap of the second conductive part 212, so that the width of the upper surface 211a of the first conductive part 211 is smaller than the width of the bottom surface 211b. In this way, the profile of the first conductive part 211 after etching can be adjusted by adjusting the etching selectivity of the second conductive part 212, without changing the type of etching solution or adding production equipment, thereby reducing the production cost of the display panel.

[0025] In some embodiments, the material of the second conductive part 212 includes metal oxide or alloy. The metal oxide or alloy material not only has electrical conductivity, but also has good chemical stability and thermal stability, and has good interface compatibility with the first conductive part 211. On the one hand, it can play a role in regulating the profile of the first conductive part 211 after etching, and on the other hand, it can also play a role in protecting the first conductive part 211, which can effectively isolate the first conductive part 211 from direct contact with the external environment, prevent the first conductive part 211 from being oxidized or corroded, so that the conductive layer 21 can maintain good conductivity.

[0026] In some embodiments, the material of the second conductive portion 212 includes metal oxide, and the metal oxide is selected from any one of titanium oxide, zinc oxide, tin oxide, and indium oxide.

[0027] In some embodiments, the first conductive part 211 has a first material, and the second conductive part 212 has an alloy composed of a second material and an etching control element. The first material is a metal or an alloy, the second material is the same as the first material, and the etching control element is different from the second material, that is, the material of the second conductive part 212 is an alloy material of the first material of the first conductive part 211 and the etching control element.

[0028] In some embodiments, the first material is selected from any one or a combination of copper, aluminum, molybdenum, titanium and silver, the second material is the same as the first material, and the etching regulating element is selected from one or a combination of molybdenum, manganese, magnesium, aluminum, tungsten, titanium and zinc.

[0029] In some embodiments, the atomic percentage of the etching regulating element in the second conductive portion is greater than or equal to 5% and less than or equal to 50%. For example, the atomic percentage of the etching regulating element in the second conductive portion is 5%, 10%, 15%, 20%, 25%, 30%, 35%, 40%, 45% or 50%.

[0030] In the embodiments of the present application, the etching selectivity of the second conductive portion 212 can be controlled by controlling the atomic percentage of the etching control element in the second conductive portion 212, so as to control the profile of the first conductive portion 211 after etching. The smaller the atomic percentage of the etching control element in the second conductive portion 212, the greater the etching selectivity of the second conductive portion 212, the greater the etching rate of the second conductive portion 212, and the smaller the slope angle formed after etching the first conductive portion 211; the greater the atomic percentage of the etching control element in the second conductive portion 212, the smaller the etching selectivity of the second conductive portion 212, the smaller the etching rate of the second conductive portion 212, and the larger the slope angle formed after etching the first conductive portion 211.

[0031] If the atomic percentage of the etching control element in the second conductive part 212 is too small, the etching rate of the second conductive part 212 will be too fast, which is not conducive to regulating the profile of the first conductive part 211 after etching. If the atomic percentage of the etching control element in the second conductive part 212 is too large, the etching rate difference between the first conductive part 211 and the second conductive part 212 will be small, resulting in unclear control of the profile of the first conductive part 211 after etching. Therefore, limiting the atomic percentage of the etching control element in the second conductive part 212 to 5% to 50% is conducive to regulating the profile of the first conductive part 211 after etching.

[0032] In some embodiments, see Figure 1, the thickness of the second conductive part 212 is greater than or equal to 200 angstroms and less than or equal to 5000 angstroms. For example, the thickness of the second conductive part 212 is 200 angstroms, 600 angstroms, 1000 angstroms, 2000 angstroms, 3000 angstroms, 4000 angstroms or 5000 angstroms. When the thickness of the second conductive part 212 is less than 200 angstroms, since the thickness of the second conductive part 212 is too small, the coverage effect on the first conductive part 211 is limited, and it cannot play a role in regulating the profile of the first conductive part 211 after etching; when the thickness of the second conductive part 212 is greater than 5000 angstroms, since the thickness of the second conductive part 212 is too large, it will cause excessive etching of the first conductive part 211. Therefore, the thickness of the second conductive part 212 is limited to 200 to 5000 angstroms, which is conducive to regulating the profile of the first conductive part 211 after etching.

[0033] In some embodiments, the thickness of the first conductive portion 211 is greater than or equal to 2000 angstroms and less than or equal to 10000 angstroms. For example, the thickness of the first conductive portion 211 is 2000 angstroms, 4000 angstroms, 6000 angstroms, 8000 angstroms, or 10000 angstroms.

[0034] In some embodiments, the greater the thickness of the second conductive portion 212, the smaller the slope angle of the first conductive portion 211; the greater the thickness of the second conductive portion 212, the greater the slope angle of the first conductive portion 211. It should be noted that when the thickness of the second conductive portion 212 is large, the etching time of the second conductive portion 212 will increase when the etching rate remains unchanged, resulting in an increase in the etching time of the first conductive portion 211, and the more the first conductive portion 211 is etched away, the smaller the slope angle of the first conductive portion 211; conversely, when the thickness of the second conductive portion 212 is small, the etching time of the second conductive portion 212 will decrease when the etching rate remains unchanged, resulting in a decrease in the etching time of the first conductive portion 211, and the less the first conductive portion 211 is etched away, the greater the slope angle of the first conductive portion 211.

[0035] In some embodiments, the side surface 211 c of the first conductive portion is a concave surface.

[0036] See also Figure 1 The side surface 211c of the first conductive part is recessed from the outside to the inside of the second conductive part 212. Since the upper surface 211a of the first conductive part is covered by the second conductive part 212, the etching degree of the first conductive part gradually increases from one end close to the second conductive part 212 to the end far away from the second conductive part 212. Moreover, since the first conductive part 211 is etched in the gap formed by etching the second conductive part 212, the etching of the first conductive part 211 is nonlinear, and finally the side surface 211c of the first conductive part forms a concave surface recessed inward.

[0037] In some embodiments, see Figure 1 , the conductive layer 21 further includes a third conductive portion 213, which is disposed at the bottom of the first conductive portion 211, that is, the conductive layer 21 is a three-layer conductive structure, and the third conductive portion 213, the first conductive portion 211 and the second conductive portion 212 are sequentially stacked on the substrate 1. By disposing the third conductive portion 213 at the bottom of the first conductive portion 211, the adhesion of the conductive layer 21 to the substrate 1 or the film layer close to the substrate 1 can be improved.

[0038] In some embodiments, the material of the third conductive portion 213 is selected from titanium, molybdenum, or titanium-molybdenum alloy.

[0039] In some embodiments, see Figure 2 , Figure 2 A structural schematic diagram of another display panel provided in an embodiment of the present application, wherein the driving circuit layer 2 also includes a light-shielding layer 22, a gate layer 23 and a source-drain layer 24, the light-shielding layer 22 is arranged on one side of the substrate 1, the gate layer 23 is arranged on the side of the light-shielding layer 22 away from the substrate 1, the source-drain layer 24 is arranged on the side of the light-shielding layer 22 away from the substrate 1, and the conductive layer 21 includes at least one of the light-shielding layer 22, the gate layer 23 and the source-drain layer 24.

[0040] In some embodiments, see Figure 2 The driving circuit layer 2 includes a light shielding layer 22 , a barrier layer 25 , an active layer 26 , a gate insulating layer 27 , a gate layer 23 , an interlayer dielectric layer 28 and a source-drain electrode layer 24 on the laminated substrate 1 .

[0041] In some embodiments, the substrate 1 is a single-layer structure or a stacked-layer structure formed of at least one of an organic material and an inorganic material. The organic material may be polyimide, and the inorganic material may be glass.

[0042] In some embodiments, the barrier layer 25 may be a single-layer structure or a stacked-layer structure formed of at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0043] In some embodiments, the material of the active layer 26 includes a silicon semiconductor material or a metal oxide semiconductor material. The silicon semiconductor material may be amorphous silicon or low temperature polysilicon. The oxide semiconductor material may specifically be indium gallium zinc oxide.

[0044] In some embodiments, the gate insulating layer 27 and the interlayer dielectric layer 28 are respectively disposed on the corresponding metal layer or active layer so that the metal layers or active layers of different layers are separated and insulated. The gate insulating layer 27 and the interlayer dielectric layer 28 can be a single-layer structure or a stacked-layer structure formed by at least one of silicon nitride, silicon oxide, and silicon oxynitride.

[0045] In some embodiments, the display panel may further include a light emitting device layer (not shown in the figure), which is disposed on a side of the driving circuit layer 2 away from the substrate 1. The light emitting device layer includes a plurality of light emitting devices, and the light emitting devices are any one of light emitting diodes, organic light emitting diodes, mini light emitting diodes, micro light emitting diode chips, and other light sources.

[0046] In some embodiments, the display panel can be a liquid crystal display panel, and the display panel can also include an opposing substrate and a liquid crystal layer. The substrate 1 and the driving circuit layer 2 constitute an array substrate. The opposing substrate is arranged on the side of the driving circuit layer away from the substrate 1, and the liquid crystal layer is arranged between the opposing substrate and the array substrate.

[0047] In some embodiments, see Figure 2 The conductive layer 21 includes a light-shielding layer 22, and the light-shielding layer 22 has a three-layer conductive structure, that is, the light-shielding layer 22 includes a third conductive portion 213, a first conductive portion 211, and a second conductive portion 212 stacked on one side of the substrate 1. In this way, the light-shielding layer 22 can have a lower slope angle after etching, thereby reducing the risk of fracture of the film layer subsequently formed on the light-shielding layer 22.

[0048] Please note that Figure 1 and Figure 2 , an angle α between the side surface 211 c and the bottom surface 211 b of the first conductive portion 211 is set as the slope angle of the first conductive portion 211 .

[0049] In some embodiments, see Figure 2 The gate layer 23 and the source-drain electrode layer 24 are respectively arranged on the corresponding insulating layer or interlayer dielectric layer. The gate layer 23 and the source-drain electrode layer 24 can be a single-layer structure formed by at least one of copper, molybdenum, titanium, aluminum, silver, etc., or a stacked-layer structure formed by at least two of the above-mentioned metal materials.

[0050] In some embodiments, see Figure 3 , Figure 3 A schematic diagram of the structure of another display panel provided in an embodiment of the present application, wherein a conductive layer 21 includes a gate layer 23, and the gate layer 23 has a three-layer conductive structure, i.e., the gate layer 23 includes a third conductive portion 213, a first conductive portion 211, and a second conductive portion 212 stacked on one side of a substrate 1. This allows the etched gate layer 23 to have a higher slope angle, reducing the line width of the signal routing of the gate layer 23, thereby freeing up more space for placing more sub-pixels, thereby increasing the resolution of the display panel.

[0051] In some embodiments, see Figure 4 , Figure 4A structural schematic diagram of another display panel provided for an embodiment of the present application, wherein a conductive layer 21 includes a source-drain layer 24, and the source-drain layer 24 has a three-layer conductive structure, i.e., the source-drain layer 24 includes a third conductive portion 213, a first conductive portion 211, and a second conductive portion 212 stacked on one side of a substrate 1. This allows the etched source-drain layer 24 to have a higher slope angle, reducing the line width of the signal routing of the source-drain layer 24, thereby freeing up more space for placing more sub-pixels, thereby increasing the resolution of the display panel.

[0052] In some embodiments, the display panel may have multiple conductive layers, wherein one conductive layer is a light shielding layer 22, one conductive layer is a gate layer 23, and another conductive layer is a source-drain layer 24. This can reduce the risk of breakage of a film layer subsequently formed on the light shielding layer 22 while reducing the line width of the signal routing of the gate layer 23 and the line width of the signal routing of the source-drain layer 24, thereby freeing up more space for placing more sub-pixels, thereby increasing the resolution of the display panel.

[0053] In some embodiments, see Figure 5 , Figure 5 A schematic diagram of the structure of another display panel provided in an embodiment of the present application, wherein the conductive layer 21 includes a light shielding layer 22, a gate layer 23, and a source-drain electrode layer 24, that is, the light shielding layer 22, the gate layer 23, and the source-drain electrode layer 24 are all three-layer conductive structures formed by stacking a third conductive portion 213, a first conductive portion 211, and a second conductive portion 212. The slope angle of the first conductive portion 211 of the gate layer 23 is greater than the slope angle of the first conductive portion 211 of the light shielding layer 22, the slope angle of the first conductive portion 211 of the source-drain electrode layer 24 is greater than the slope angle of the first conductive portion 211 of the light shielding layer 22, and the slope angle of the first conductive portion 211 of the gate layer 23 is less than the slope angle of the first conductive portion 211 of the source-drain electrode layer 24.

[0054] It should be noted that by setting the slope angle of the first conductive portion 211 of the light shielding layer 22 to the minimum, the flatness of the barrier layer 25, the gate insulating layer 27, the interlayer dielectric layer 28 and other film layers subsequently deposited on the light shielding layer 22 can be improved, and cracks in the gate layer 23 and the source-drain electrode layer 24 deposited on the above film layers can be prevented. By making the slope angle of the first conductive portion 211 of the gate layer 23 greater than the slope angle of the first conductive portion 211 of the light shielding layer 22, and making the slope angle of the first conductive portion 211 of the gate layer 23 smaller than the slope angle of the first conductive portion 211 of the source-drain electrode layer 24, so that the first conductive portion 211 of the gate layer 23 has a larger slope angle, and the first conductive portion 211 of the source-drain electrode layer 24 has the largest slope angle, not only can the line width of the signal routing in the gate layer 23 and the source-drain electrode layer 24 be reduced, thereby increasing the resolution of the display panel, but also the flatness of the interlayer dielectric layer 28 subsequently deposited on the gate layer 23 can be improved, and the risk of cracks in the subsequently formed source-drain electrode layer 24 can be reduced.

[0055] According to the display panel provided in the above embodiments of the present application, the embodiments of the present application further provide a method for manufacturing a display panel, which is used to manufacture a display panel provided in any of the above embodiments. Figure 6 , Figures 7a to 7d , Figure 6 A flowchart of a method for manufacturing a display panel provided in an embodiment of the present application, Figures 7a to 7d A schematic diagram of a method for manufacturing a display panel provided in an embodiment of the present application, wherein the method for manufacturing a display panel comprises the following steps: Step S1 : forming a first conductive material layer 2110 on a substrate 1 .

[0056] Step S2, forming a second conductive material layer 2120 on the upper surface of the first conductive material layer 2110, wherein the etching selectivity of the second conductive material layer 2120 is greater than that of the first conductive material layer 2110; Step S3, etching the first conductive material layer 2110 and the second conductive material layer 2120 to form the first conductive portion 211 and the second conductive portion 212, wherein the upper surface width of the first conductive portion 211 is smaller than the bottom width.

[0057] See also Figure 7a , step S1 includes: forming a third conductive material layer 2130 on the substrate 1 ; and forming a first conductive material layer 2110 on the upper surface of the third conductive material layer 2130 .

[0058] In some embodiments, the material of the first conductive material layer 2110 is selected from one or a combination of copper, aluminum, molybdenum, titanium and silver.

[0059] In some embodiments, the second conductive material layer 2120 comprises an alloy consisting of a second material and an etching regulating element, the second material is the same as the material of the first conductive material layer 2110, and is selected from a combination of one or more of copper, aluminum, molybdenum, titanium and silver, and the etching regulating element is selected from a combination of one or more of molybdenum, manganese, magnesium, aluminum, tungsten, titanium and zinc, so that the etching selectivity of the second conductive material layer 2120 is greater than the etching selectivity of the first conductive material layer 2110.

[0060] In some embodiments, the atomic percentage of the etching regulating element in the second conductive material layer 2120 is greater than or equal to 5% and less than or equal to 50%.

[0061] In some embodiments, the material of the third conductive material layer 2130 is selected from titanium, molybdenum, or molybdenum-titanium alloy.

[0062] In some embodiments, see Figure 7b to Figure 7d Step S3 includes: forming a layer of photoresist on the upper surface of the second conductive material layer 2120, exposing and developing the photoresist to form a photoresist pattern 3; wet etching the first conductive material layer 2110, the second conductive material layer 2120 and the third conductive material layer 2130 using the same etching solution to form a first conductive portion 211, a second conductive portion 212 and a third conductive portion 213.

[0063] See also Figure 7c Since the etching selectivity of the second conductive material layer 2120 is greater than that of the first conductive material layer 2110, the second conductive material layer 2120 is preferentially etched away from the side. Figure 7c Middle left picture and Figure 7d As shown in the left figure in , the larger the etching selectivity of the second conductive material layer 2120, the faster the etching rate of the second conductive material layer 2120, the smaller the width of the second conductive material layer 2120, and the smaller the slope angle of the first conductive material layer 2110; Figure 7c Middle right picture and Figure 7d As shown in the right figure, the smaller the etching selectivity of the second conductive material layer 2120, the slower the etching rate of the second conductive material layer 2120, the larger the width of the second conductive material layer 2120, and the larger the slope angle of the first conductive material layer 2110. In this way, the profile (i.e., slope angle) of the first conductive material layer 2110 after etching is regulated by regulating the etching rate of the second conductive material layer 2120, without changing the etching solution and etching equipment, thereby reducing production costs.

[0064] It should be noted that the step of forming a conductive layer in the method for manufacturing a display panel provided in the embodiment of the present application can be used to prepare any metal layer in the display panel, such as a light shielding layer, a gate layer, and a source and drain layer.

[0065] According to the display panel provided in the above embodiment of the present application, the embodiment of the present application further provides a display device, Figure 8 As shown, Figure 8 The structure diagram of the display device provided in the embodiment of the present application is as follows. The display device 1000 includes a display panel 100 and a housing 200. The display panel 100 is disposed on the housing 200. The display panel 100 can be the display panel provided in any of the above embodiments. The display device provided in this embodiment can achieve the same effect as the display panel in any of the above embodiments, and will not be described in detail here.

[0066] Beneficial effects of the embodiments of the present application: The embodiments of the present application provide a display panel and a method for manufacturing the display panel, wherein the display panel includes a substrate and a driving circuit layer, the driving circuit layer is arranged on the substrate, the driving circuit layer includes at least one conductive layer, the conductive layer includes a first conductive part and a second conductive part, the second conductive part is arranged on the upper surface of the first conductive part, by making the etching selectivity of the second conductive part greater than the etching selectivity of the first conductive part, during the etching process, the second conductive part can be preferentially etched off by the side, and the first conductive part can be etched from the gap of the second conductive part so that the upper surface width of the first conductive part is smaller than the bottom width, so that the profile of the conductive layer after etching can be controlled by adjusting the etching selectivity of the first conductive part and the second conductive part, without changing the type of etching solution or adding production equipment, thereby reducing the production cost of the display panel.

[0067] In summary, although the present application is disclosed as above with preferred embodiments, the above preferred embodiments are not intended to limit the present application. Ordinary technicians in this field can make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application is based on the scope defined by the claims.

Claims

1. A display panel, characterized in that: include: substrate; A driving circuit layer is disposed above the substrate, the driving circuit layer comprises at least one conductive layer, the conductive layer comprises a first conductive portion and a second conductive portion, the first conductive portion is disposed above the substrate, and the second conductive portion is disposed on an upper surface of the first conductive portion; Wherein, the upper surface width of the first conductive portion is smaller than the bottom surface width.

2. The display panel according to claim 1, wherein: The conductive layer comprises a light shielding layer, a source-drain electrode layer and a gate layer, wherein the gate layer is arranged on a side of the light shielding layer away from the substrate, and the source-drain electrode layer is arranged on a side of the gate layer away from the light shielding layer; Among them, the angle between the side surface and the bottom surface of the first conductive part is set as the slope angle, the slope angle of the first conductive part of the gate layer is greater than the slope angle of the first conductive part of the light shielding layer, the slope angle of the first conductive part of the source and drain layer is greater than the slope angle of the first conductive part of the light shielding layer, and the slope angle of the first conductive part of the gate layer is less than the slope angle of the first conductive part of the source and drain layer.

3. The display panel according to claim 1, wherein: An etching selectivity ratio of the second conductive portion is greater than an etching selectivity ratio of the first conductive portion.

4. The display panel according to claim 1, wherein: The greater the thickness of the second conductive portion, the smaller the slope angle of the first conductive portion.

5. The display panel according to claim 1, wherein: The side surface of the first conductive portion is a concave surface.

6. The display panel according to claim 1, wherein: The material of the second conductive part includes metal oxide or alloy.

7. The display panel according to claim 6, wherein: The first conductive part has a first material, and the second conductive part has an alloy composed of a second material and an etching control element; Among them, the first material is metal or alloy, the second material is the same as the first material, and the etching regulating element includes at least one metal element.

8. The display panel according to claim 7, wherein: The atomic percentage of the etching regulating element in the second conductive portion is greater than or equal to 5% and less than or equal to 50%.

9. The display panel according to claim 7, wherein: The first material is selected from one or more combinations of copper, aluminum, molybdenum, titanium and silver, and the etching regulating element is selected from one or more combinations of molybdenum, manganese, magnesium, aluminum, tungsten, titanium and zinc.

10. A method for manufacturing a display panel, characterized in that: Used to manufacture the display panel according to any one of claims 1 to 9, the manufacturing method of the display panel comprises the following steps: forming a first conductive material layer over the substrate; forming a second conductive material layer on the upper surface of the first conductive material layer; The first conductive material layer and the second conductive material layer are etched to form a first conductive portion and a second conductive portion, wherein the width of the upper surface of the first conductive portion is smaller than the width of the bottom surface.

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