Preparation process of ultra-thin Teflon film adhesive tape

Abstract

The invention belongs to the technical field of adhesive tape preparation, and discloses an ultra-thin Teflon film adhesive tape preparation process, which comprises the following preparation steps: S1, raw material preparation and ultra-thin treatment, and raw material selection and pretreatment: selecting a Teflon turning film with the purity of more than or equal to 99.5% as a base material; through the chemical vapor deposition (CVD) technology, a layer of thin film with a special function, such as a carbon nanotube film or an aluminum oxide film, is deposited on the surface of the Teflon film, and the mechanical property, chemical resistance and wear resistance of the Teflon film can be remarkably enhanced through the thin film, so that the overall performance of the adhesive tape is improved; and by introducing an electrochemical etching and polishing technology, redundant materials on the surface of the Teflon film are removed, the ultrathin effect is achieved, the surface is further smoothed, the uniformity and smoothness of the film are ensured, the adhesive force and the use performance of the adhesive tape are improved, ultrathin and smooth treatment of the Teflon film is achieved, material waste and the defective rate are reduced, and the production cost is reduced. And the production efficiency and the product quality are improved.

Description

Technical Field

[0001] The invention belongs to the technical field of adhesive tape preparation, and specifically relates to a process for preparing an ultra-thin Teflon film adhesive tape. Background Art

[0002] Teflon film tape, also known as Teflon film tape or pure Teflon tape, is a high-performance, multifunctional tape product. The preparation process of Teflon film tape is as follows: polytetrafluoroethylene (PTFE) raw materials are extruded, hot pressed, cooled or stretched to form a Teflon film, and then an adhesive is coated on it and dried, and finally slit and wound into a Teflon film tape.

[0003] In the prior art, during the actual preparation process, factors such as excessive use of raw materials, uneven coating, incomplete curing, and excessive winding tension result in excessive local thickness of the tape, thereby affecting the overall thickness and directly increasing the overall thickness of the tape. Thicker tapes may have lower flexibility and ductility, resulting in easy breakage or damage during use, greatly reducing their performance. In addition, thicker tapes also take up more space during transportation and storage, increasing logistics costs and resulting in poor actual use effects. Summary of the invention

[0004] The purpose of the present invention is to provide a process for preparing an ultra-thin Teflon film tape to solve the problems raised in the above background technology.

[0005] In order to achieve the above object, the present invention provides the following technical solution: a process for preparing an ultra-thin Teflon film tape, comprising the following preparation steps:

[0006] S1. Raw material preparation and ultra-thinning process

[0007] Raw material selection and pretreatment: Select Teflon skived film with a purity of ≥99.5% as the substrate, and use an ultrasonic cleaner to clean the substrate;

[0008] Chemical vapor deposition (CVD) technology: Deposit carbon nanotubes or aluminum oxide on the pretreated substrate using CVD technology;

[0009] Electrochemical etching and polishing: electrochemically etch the deposited substrate, and then polish the etched substrate with a polishing voltage of 5-10V and a time of 10-20 minutes;

[0010] S2. Gluing and drying

[0011] Ion beam assisted deposition (I BAD): The adhesive layer is deposited on the etched and polished substrate using I BAD technology at a deposition rate of 0.1-0.5nm / s.

[0012] Vacuum drying and curing: Place the coated substrate in a vacuum drying oven with the vacuum degree controlled at 10^-4Pa, and perform curing after drying;

[0013] S3, Slitting and Winding

[0014] Precision mechanical slitting: Use precision mechanical slitting equipment to slit the dried and cured tape;

[0015] Tension control system: Apply tension control system to the slit tape, and control the tension between 5-15N so that it can be wound on the reel;

[0016] S4. Inspection and quality control

[0017] Non-destructive testing technology: X-ray fluorescence spectrometer (XRF) is used to analyze the composition of the tape, and infrared spectrometer (IR) is used to analyze the structure of the tape;

[0018] Performance test: Conduct heat resistance test on the tape by placing it in a high temperature environment (such as 200°C) and observing the state changes; conduct chemical resistance test by placing the tape in strong acid and strong alkali chemical reagents and observing the phenomenon changes; conduct electrical stability test on the tape, including insulation resistance and breakdown voltage electrical performance tests.

[0019] Preferably, in S1, the cleaning time is 10-15 minutes and the water temperature is controlled at 40-50°C.

[0020] Preferably, in S1, the deposition temperature of the CVD deposition technology is 600-800° C., the gas flow rate is controlled between 50-100 sccm, and the deposition time is 1-2 hours.

[0021] Preferably, in S1, etching treatment: placing the Teflon film in an electrochemical etching tank, passing an electrolyte and applying voltage and current to electrochemically dissolve the surface of the Teflon film to remove excess material; polishing treatment: after etching is completed, moving the Teflon film to an electrochemical polishing tank and performing polishing treatment using a polishing liquid and a polishing voltage.

[0022] Preferably, the etching voltage is 10-20V, the time is 5-10 minutes, the etching voltage is controlled between 10-20V, and the polishing voltage is controlled between 5-10V, and the time is 10-20 minutes.

[0023] Preferably, in S2, the Teflon membrane is placed in an I BAD device, a gaseous precursor containing an adhesive is introduced, and ion beam bombardment is applied simultaneously, so that the precursor undergoes a chemical reaction on the surface of the Teflon membrane and is deposited into a film, and the ion beam energy is controlled between 100-300 keV.

[0024] Preferably, in S2, the drying temperature is 80-120°C, the curing temperature is 150-200°C, and the curing time is 1-2 hours.

[0025] Preferably, in S3, the feed speed of the slitting tool is controlled between 0.1-0.5 m / s, and the winding speed is controlled between 0.5-1.5 m / s.

[0026] The beneficial effects of the present invention are as follows:

[0027] 1. The present invention introduces chemical vapor deposition (CVD) technology into the preparation process of Teflon film tape to deposit an extremely thin film with special functions on the surface of the Teflon film, such as a carbon nanotube film or an aluminum oxide film. This film can significantly enhance the mechanical properties, chemical resistance and wear resistance of the Teflon film, thereby improving the overall performance of the tape; and by introducing electrochemical etching and polishing technology, excess material on the surface of the Teflon film is removed to achieve an ultra-thin effect, and the surface is further smoothed to ensure the uniformity and smoothness of the film, improve the adhesion and performance of the tape, and achieve ultra-thin and smooth processing of the Teflon film, reduce material waste and defective rate, and improve production efficiency and product quality.

[0028] 2. The present invention uses ion beam assisted deposition (I BAD) technology to deposit a thin adhesive layer on the surface of the Teflon film and ensure the uniform deposition and firm bonding of the adhesive layer, thereby greatly improving the adhesion and durability of the tape, reducing the waste and defective rate of the adhesive layer, and improving production efficiency and product quality.

[0029] 3. The present invention introduces I BAD technology to ensure the uniformity and density of the adhesive layer on the surface of the Teflon film, thereby improving the overall quality and performance of the ultra-thin Teflon film tape. Compared with traditional deposition technology, I BAD technology has higher deposition efficiency and better deposition quality, which helps to optimize the production process and reduce costs. By precisely controlling the deposition rate and thickness of the adhesive layer, ultra-thin Teflon film tapes with different properties can be produced to meet the application requirements of different fields, such as electronics, medical treatment, food packaging, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a schematic diagram of the process flow of the present invention. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] like Figure 1 As shown, an embodiment of the present invention provides a process for preparing an ultra-thin Teflon film tape, comprising the following preparation steps:

[0033] S1. Raw material preparation and ultra-thinning process

[0034] Raw material selection and pretreatment: Select Teflon skived film with a purity of ≥99.5% as the substrate, and use an ultrasonic cleaner to clean the substrate;

[0035] Chemical vapor deposition (CVD) technology: Deposit carbon nanotubes or aluminum oxide on the pretreated substrate using CVD technology;

[0036] Electrochemical etching and polishing: electrochemically etch the deposited substrate, and then polish the etched substrate with a polishing voltage of 5-10V and a time of 10-20 minutes;

[0037] S2. Gluing and drying

[0038] Ion beam assisted deposition (I BAD): The adhesive layer is deposited on the etched and polished substrate using I BAD technology at a deposition rate of 0.1-0.5nm / s.

[0039] Vacuum drying and curing: Place the coated substrate in a vacuum drying oven with the vacuum degree controlled at 10^-4Pa, and perform curing after drying;

[0040] S3, Slitting and Winding

[0041] Precision mechanical slitting: Use precision mechanical slitting equipment to slit the dried and cured tape;

[0042] Tension control system: Apply tension control system to the slit tape, and control the tension between 5-15N so that it can be wound on the reel;

[0043] S4. Inspection and quality control

[0044] Non-destructive testing technology: Use X-ray fluorescence spectrometer (XRF) to analyze the composition of the tape, and use infrared spectrometer (IR) to analyze the structure of the tape; Performance test: Test the heat resistance of the tape by placing it in a high temperature environment (such as 200°C) and observing the state changes; perform chemical resistance test by placing the tape in strong acid and strong alkali chemical reagents and observing the phenomenon changes; perform electrical stability test on the tape, including insulation resistance and breakdown voltage electrical performance tests.

[0045] Through XRF technology, the elemental composition in the tape is accurately analyzed to ensure that the tape does not contain harmful elements and that the proportion of each element meets the design requirements. In actual operation, X-rays are used to excite the elements in the sample, and the type and content of the elements in the sample are analyzed by measuring the excited fluorescence spectrum. XRF technology is fast, accurate, and non-destructive, and can effectively monitor the quality of the raw materials of the tape to ensure that the product meets relevant standards and customer requirements; through IR technology, the chemical bonds and functional groups in the tape are identified and analyzed to ensure that the tape has the expected chemical structure and properties. In actual operation, the tape sample is placed in an IR device, and the sample is irradiated with infrared light. The chemical bonds and functional groups in the sample are analyzed by measuring the vibration spectrum generated after the sample absorbs infrared light. IR technology can provide detailed information on the chemical structure of the tape, which helps to discover and solve quality problems in the production process and ensure that the product has stable chemical and physical properties.

[0046] The above-mentioned adhesive layer mainly includes a base resin, a cross-linking agent and a plasticizer, wherein the base material of the adhesive layer is selected from resins that have good compatibility with Teflon film, such as acrylic resin, polyurethane resin, etc. These resins have good adhesion, temperature resistance and chemical stability, and can meet the needs of ultra-thin Teflon film tape in different application scenarios, and the cross-linking agent is used to promote the cross-linking reaction of resin molecules inside the adhesive layer, thereby improving the strength and heat resistance of the adhesive. The selection and dosage of the cross-linking agent need to be adjusted according to the specific resin type and application requirements, and the plasticizer is used to improve the flexibility and processing properties of the adhesive, making it easier to coat and cure. The selection of the plasticizer should take into account its impact on the performance of the adhesive to avoid introducing too much volatile substances.

[0047] Among them, in S1, the cleaning time is 10-15 minutes, the water temperature is controlled at 40-50°C, the deposition temperature of CVD technology deposition is 600-800°C, the gas flow rate is controlled between 50-100sccm, the deposition time is 1-2 hours, etching treatment: place the Teflon film in an electrochemical etching tank, pass the electrolyte and apply voltage and current to electrochemically dissolve the surface of the Teflon film and remove excess material, polishing treatment: after etching, move the Teflon film to the electrochemical polishing tank, use polishing liquid and polishing voltage for polishing, etching voltage 10-20V, time 5-10 minutes, etching voltage controlled between 10-20V, polishing voltage controlled between 5-10V, time 10-20 minutes.

[0048] By controlling the cleaning time to 10-15 minutes and the water temperature to 40-50°C, an optimal cleaning effect is achieved, which completely removes oil, dust and other impurities on the surface of the Teflon membrane, providing a clean, pollution-free substrate for subsequent deposition, etching and polishing steps. The clean surface helps to ensure the uniformity and quality of the subsequent deposition layer and reduce the impact of defects and impurities on the performance of the final product.

[0049] By setting the deposition temperature to 600-800°C, the gas flow rate to 50-100 sccm, and the deposition time to 1-2 hours, a layer of carbon nanotubes or aluminum oxide can be stably and effectively deposited on the Teflon film to enhance its surface properties, including wear resistance, corrosion resistance, etc., and in conjunction with the uniformity of the deposited layer, controlling the deposition temperature and gas flow rate within the above range helps to ensure the density and uniformity of the deposited layer, while the deposition time determines the thickness of the deposited layer.

[0050] After the above deposition is completed, turn off the heating system and allow the reaction chamber to cool naturally to room temperature. A high vacuum or low pressure environment should be maintained in the deposition chamber to avoid contamination by impurities. The temperature and gas flow rate must be strictly controlled during the deposition process to ensure the uniformity and quality of the film. The mechanical properties and chemical resistance of the Teflon film are comprehensively improved, making it more suitable for harsh environments such as high temperature and high pressure. The wear resistance and service life of the tape are enhanced, and the replacement frequency and cost are reduced.

[0051] In the electrochemical etching and polishing steps, the uneven parts and impurities on the surface of the Teflon film are removed by electrochemical etching, thereby improving the surface flatness. The etched surface is more uniform and flat, which is helpful for subsequent polishing treatment and the performance of the final product; and in conjunction with the polishing step, the surface of the Teflon film is further smoothed, and tiny scratches and uneven parts generated during the etching process are removed. The polished surface is smoother and delicate, which helps to improve the appearance and performance of the final product.

[0052] Among them, in S2, the Teflon film is placed in the IBAD equipment, and a gaseous precursor containing an adhesive is introduced, and ion beam bombardment is applied at the same time, so that the precursor chemically reacts on the surface of the Teflon film and deposits into a film. The ion beam energy is controlled between 100-300 keV, the drying temperature is 80-120°C, the curing temperature is 150-200°C, and the time is 1-2 hours.

[0053] Through IBAD technology, the gaseous precursor containing adhesive can be accurately deposited on the surface of the Teflon film to form a uniform and dense adhesive layer. The bombardment of the ion beam not only promotes the chemical reaction of the precursor, but also enhances the bonding force between the adhesive layer and the Teflon film, making the interface between the two stronger. By adjusting the energy and deposition time of the ion beam, the deposition rate and thickness of the adhesive layer can be precisely controlled to meet different application requirements.

[0054] IBAD technology can ensure the uniformity and density of the adhesive layer on the surface of the Teflon film, thereby improving the overall quality and performance of the ultra-thin Teflon film tape. Compared with traditional deposition technology, IBAD technology has higher deposition efficiency and better deposition quality, which helps to optimize the production process and reduce costs. By precisely controlling the deposition rate and thickness of the adhesive layer, ultra-thin Teflon film tapes with different properties can be produced to meet the application needs of different fields, such as electronics, medical care, food packaging, etc.

[0055] Among them, in S3, the feed speed of the slitting tool is controlled between 0.1-0.5 m / s, and the winding speed is controlled between 0.5-1.5 m / s.

[0056] Since too fast a feed speed may lead to uneven slitting edges, burrs or tears, and too slow a speed may affect production efficiency, a reasonable speed needs to be controlled. The feed speed of the slitting tool is controlled within the range of 0.1 to 0.5 m / s, which helps to ensure the accuracy and stability of slitting, and is the optimal speed range. Appropriate feed speed can reduce wear on the tool and extend its service life.

[0057] The winding speed is controlled between 0.5 and 1.5 m / s, which is the optimal winding speed to ensure the tightness and neatness of the tape winding. This winding speed can also improve the overall efficiency of the production line and shorten the production cycle.

[0058] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A process for preparing an ultra-thin Teflon film tape, characterized in that: The method comprises the following preparation steps: S1. Raw material preparation and ultra-thinning process Raw material selection and pretreatment: Select Teflon skived film with a purity of ≥99.5% as the substrate, and use an ultrasonic cleaner to clean the substrate; Chemical vapor deposition (CVD) technology: Deposit carbon nanotubes or aluminum oxide on the pretreated substrate using CVD technology; Electrochemical etching and polishing: electrochemically etch the deposited substrate, and then polish the etched substrate with a polishing voltage of 5-10V and a time of 10-20 minutes; S2. Gluing and drying Ion beam assisted deposition (IBAD): The adhesive layer is deposited on the etched and polished substrate using IBAD technology at a deposition rate of 0.1-0.5nm / s. Vacuum drying and curing: Place the coated substrate in a vacuum drying oven with the vacuum degree controlled at 10^-4Pa, and perform curing after drying; S3, Slitting and Winding Precision mechanical slitting: Use precision mechanical slitting equipment to slit the dried and cured tape; Tension control system: Apply tension control system to the slit tape, and control the tension between 5-15N so that it can be wound on the reel; S4. Inspection and quality control Non-destructive testing technology: X-ray fluorescence spectrometer (XRF) is used to analyze the composition of the tape, and infrared spectrometer (IR) is used to analyze the structure of the tape; Performance test: Conduct heat resistance test on the tape by placing it in a high temperature environment (such as 200°C) and observing the state changes; conduct chemical resistance test by placing the tape in strong acid and strong alkali chemical reagents and observing the phenomenon changes; conduct electrical stability test on the tape, including insulation resistance and breakdown voltage electrical performance tests.

2. The process for preparing an ultra-thin Teflon film tape according to claim 1, characterized in that: In S1, the cleaning time is 10-15 minutes, and the water temperature is controlled at 40-50°C.

3. The process for preparing an ultra-thin Teflon film tape according to claim 2, characterized in that: In S1, the deposition temperature of the CVD deposition technology is 600-800° C., the gas flow rate is controlled between 50-100 sccm, and the deposition time is 1-2 hours.

4. The process for preparing an ultra-thin Teflon film tape according to claim 3, characterized in that: In S1, etching treatment: placing the Teflon film in an electrochemical etching tank, passing an electrolyte and applying voltage and current to electrochemically dissolve the surface of the Teflon film to remove excess material; polishing treatment: after etching is completed, moving the Teflon film to an electrochemical polishing tank and performing polishing treatment using a polishing solution and a polishing voltage.

5. The process for preparing an ultra-thin Teflon film tape according to claim 4, characterized in that: The etching voltage is 10-20V, the time is 5-10 minutes, the etching voltage is controlled between 10-20V, and the polishing voltage is controlled between 5-10V, the time is 10-20 minutes.

6. The process for preparing an ultra-thin Teflon film tape according to claim 1, characterized in that: In S2, the Teflon film is placed in an IBAD device, a gaseous precursor containing an adhesive is introduced, and an ion beam bombardment is applied simultaneously, so that the precursor undergoes a chemical reaction on the surface of the Teflon film and is deposited into a film, and the ion beam energy is controlled between 100-300 keV.

7. The process for preparing an ultra-thin Teflon film tape according to claim 6, characterized in that: In S2, the drying temperature is 80-120°C, the curing temperature is 150-200°C, and the curing time is 1-2 hours.

8. The process for preparing an ultra-thin Teflon film tape according to claim 1, characterized in that: In S3, the feed speed of the slitting tool is controlled between 0.1-0.5 m / s, and the winding speed is controlled between 0.5-1.5 m / s.

Images