Temperature control device and method

Abstract

The invention relates to the field of semiconductor equipment, and provides a temperature control device and method, the temperature control device is applied to temperature control of a semiconductor equipment pipeline, and the temperature control device comprises a detection unit, at least two heating bags and at least one adjusting unit; each heating bag comprises a heating unit; the heating unit covers the outer side of the semiconductor equipment pipeline; the heating unit is used for heating the semiconductor equipment pipeline; the detection unit and all the heating units form a series loop, and the heating units are located on the inner side of the heating bag. The detection unit is used for acquiring a temperature value in the heating bag; the adjusting unit is connected with the heating unit in parallel, and the adjusting unit is located on the outer side of the heating bag; and the adjusting unit and the heating unit which are connected in parallel are used for sharing the current in the series loop together. The device is used for controlling and balancing the temperature of each heating bag coated on the pipeline of the semiconductor equipment.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor equipment, and in particular to a temperature control device and method. Background Art

[0002] In semiconductor equipment, heating clothes are mainly used in semiconductor equipment pipelines to prevent precursor condensation from generating particles that block pipelines. When the application temperature of heating clothes is above 100 degrees Celsius, the temperature uniformity can only be guaranteed within the range of ± 10% at best. The fluctuation range is too large, and cold spots are very likely to appear in the entire pipeline, which cannot meet the pipeline temperature uniformity or gradient heating requirements.

[0003] In the related art, each heating zone contains several heating packs, each of which is equipped with a heating wire for heating. The zones are connected in series to form a loop, and each heating pack is temperature-controlled separately. The heating of the same loop can only accurately control the temperature of one of the heating packs, and the remaining heating packs can only rely on the resistance design and distribution uniformity of the heating wire to maintain temperature consistency. However, due to the influence of the manufacturing process, there will be a gap between the actual resistance value of the heating wire and the design value, and the uniformity of the distribution of the heating wire along the pipeline will also be different, which causes the problem of excessive differences in temperature control of different heating packs. Therefore, there is an urgent need for a temperature control device and method to improve the above problems. Summary of the invention

[0004] The object of the present invention is to provide a temperature control device and method, which is used to balance the temperature control of each heating pack covered on the pipeline of semiconductor equipment.

[0005] In a first aspect, the present invention provides a temperature control device, which is applied to the temperature control of semiconductor equipment pipelines, and includes: a detection unit, at least two heating packs and at least one adjustment unit; each of the heating packs includes a heating unit; the heating unit is coated on the outside of the semiconductor equipment pipeline; the heating unit is used to heat the semiconductor equipment pipeline; the detection unit and all the heating units form a series circuit, and the heating unit is located on the inside of the heating pack; the detection unit is used to obtain the temperature value in the heating pack; the adjustment unit is connected in parallel with the heating unit, and the adjustment unit is located on the outside of the heating pack; the parallel adjustment unit and the heating unit are used to share the current in the series circuit; the resistance value of the adjustment unit is determined by the temperature value.

[0006] Optionally, the heating unit is configured as a fixed-value resistor in contact with the semiconductor equipment pipeline; the detection unit is configured as a temperature-controlled thermocouple, and the temperature-controlled thermocouple is located on the inner side of the heating bag, and is used to output the actual temperature value in real time according to the temperature inside the heating bag.

[0007] Optionally, the heating pack further includes a coating layer; the coating layer is wrapped around the outside of the heating unit to keep the semiconductor equipment pipelines warm.

[0008] Optionally, the adjustment unit is configured as an adjustable load, and the adjustable load is located outside the coating; the fixed resistor is connected in parallel with the adjustable load through a reserved joint; one end of the reserved joint connected to the fixed resistor is located inside the coating, and the other end of the reserved joint connected to the adjustable load is located outside the coating.

[0009] Optionally, an insulating outer cover is provided on the outer side of the adjustable load; the insulating outer cover includes a cover body and a cover cover; the cover body is movably connected to the cover cover; when the cover cover is buckled with the cover body, it is used to protect the adjustable load; when the cover cover is separated from the cover body, it is used to expose the adjustable load for adjustment or maintenance operations.

[0010] Optionally, a power supply unit is connected to the series circuit; the power supply unit is used to provide a power supply with a constant equivalent voltage to the series circuit.

[0011] Optionally, an over-temperature alarm switch is also provided in the heating pack; the over-temperature alarm switch is connected in series in the series circuit; the over-temperature alarm switch is used to automatically disconnect the series circuit when it detects that the temperature of the heating pack exceeds a preset threshold value, so as to prevent the semiconductor equipment pipeline from overheating and send out an alarm signal.

[0012] In a second aspect, the present invention provides a temperature control method, which is applied to the temperature control device described in any one of the first aspects, comprising: obtaining an actual temperature value on a semiconductor device pipeline covered by a heating unit; comparing the actual temperature value with a target temperature value to obtain a temperature difference value that needs to be adjusted for the heating unit; determining the specific heat capacity of the material in the heating package, and calculating the amount of heat required to be added by the heating package to reach the target temperature value, recorded as a first calorific value; obtaining the amount of heat carried away by the gas passing through the semiconductor device pipeline according to prior data, recorded as a second calorific value, the prior data being used to record the amount of heat carried away by the gas in the semiconductor device pipeline per unit time; calculating the sum of the first calorific value and the second calorific value, recorded as a total calorific value; calculating a power value based on the total calorific value and the heating time; calculating a parallel resistance value required for the heating unit according to the power value and the power supply voltage value; adjusting the resistance value of the adjustment unit outside the heating package according to the parallel resistance value to adjust the heating power of the heating unit so as to reduce the temperature difference value corresponding to each heating package.

[0013] Optionally, the priori data includes experimental data or simulation data; the heating time is a preset time or is obtained based on the priori data; and the power supply voltage value is an equivalent voltage value preset as a constant value.

[0014] Optionally, the heating pack includes a first heating pack, a second heating pack and a third heating pack, wherein the first heating pack, the second heating pack and the third heating pack are each provided with a heating unit; and the total calorific value Q in the first heating pack satisfies: Q=Q1+Q2; Q1=Cm(detaT1); Q = P * t; Wherein, Q1 is the first calorific value corresponding to the first heating bag, Q2 is the second calorific value corresponding to the first heating bag; C is the specific heat capacity of the substance in the first heating bag, m is the mass of the substance in the first heating bag, the temperature difference detaT1 that needs to be adjusted by the heating unit in the first heating bag; t is the heating time, and the power value P satisfies: P=I^2*R; R=U / I=((R1*R4) / (R1+R4)+R2+R3); Among them, R1 is the resistance value of the heating unit in the first heating package, R2 is the resistance value of the heating unit in the second heating package, R3 is the resistance value of the heating unit in the third heating package, R4 is the resistance value of the adjustment unit, and the adjustment unit is connected in parallel to the heating unit in the first heating package, I is the total current flowing through the series circuit, the detection unit and all the heating units constitute the series circuit, U is the total voltage applied by the power supply unit to the series circuit, and R is the equivalent total resistance in the series circuit.

[0015] Compared with the prior art, the invention has the following beneficial effects: by introducing an independent adjustment unit and connecting it in parallel with the heating unit, accurate current distribution can be performed at each heating pack, thereby achieving more precise temperature control. Even if there are resistance differences or uneven wire layouts between different heating packs, the temperature consistency of each heating pack can be guaranteed, significantly improving the temperature uniformity of the entire system. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 A schematic diagram of the structure of a temperature control device provided by the present invention; Figure 2 A schematic structural diagram of a temperature control device provided by the present invention and provided with three heating packs; Figure 3 A schematic structural diagram of an insulating cover provided by the present invention; Figure 4 A schematic flow chart of a temperature control method provided by the present invention; Figure 5 A schematic diagram of the circuit structure of a temperature control device provided by the present invention; Figure 6A schematic structural diagram of a temperature control system provided by the present invention.

[0017] Description of reference numerals in the figures: 1. Detection unit; 2. Heating unit; 3. Adjustment unit; 4. Power supply unit; 51. First heating pack; 52. Second heating pack; 53. Third heating pack; 61. First reserved connector; 62. Second reserved connector; 63. Third reserved connector; 60. Main power connector; 71. First power connector; 72. Second power connector; 8. Processing unit; 91. Cover body; 92. Cover; 93. Adjustable load. DETAILED DESCRIPTION

[0018] In order to make the purpose, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0019] In the present invention, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. The term "plurality" refers to two or more than two, unless otherwise clearly defined.

[0020] In view of the problems existing in the existing technology, such as Figure 1 As shown, a temperature control device is provided in the first embodiment, which is applied to the temperature control of semiconductor equipment pipelines, including: a detection unit 1, at least two heating packs and at least one adjustment unit 3; each of the heating packs includes a heating unit 2; the heating unit is coated on the outside of the semiconductor equipment pipeline; the heating unit 2 is used to heat the semiconductor equipment pipeline; the detection unit 1 and all the heating units 2 form a series loop, and the heating unit 2 is located on the inside of the heating pack; the detection unit 1 is used to obtain the temperature value in the heating pack; the adjustment unit 3 is connected in parallel with the heating unit 2, and the adjustment unit 3 is located on the outside of the heating pack; the parallel adjustment unit 3 and the heating unit 2 are used to share the current in the series loop; the resistance value of the adjustment unit 3 is determined by the temperature value.

[0021] In some specific embodiments, the two heating packs include a first heating pack 51 and a second heating pack 52, and the first heating pack 51 and the second heating pack 52 belong to the same heating zone, and the semiconductor pipelines in the same heating zone are interconnected. A detection unit 1 and a heating unit 2 are provided in the first heating pack 51. The heating unit 2 in the first heating pack 51 is connected in parallel with an adjustment unit 3. The adjustment unit 3 is located on the outside of the first heating pack 51; the second heating pack 52 is also provided with a heating unit 2 and a detection unit 1, but its heating unit 2 is not connected to the adjustment unit 3. In this embodiment, the temperature value detected by the detection unit 1 in the second heating pack 52 is used as the target temperature value, and the resistance value of the adjustment unit 3 is adjusted to adjust the current value flowing through the heating unit 2 in the first heating pack 51, thereby ensuring that the temperature of the semiconductor device pipeline in the first heating pack 51 can be consistent with the temperature of the semiconductor device pipeline in the second heating pack 52.

[0022] In some other specific embodiments, the heating unit 2 in the second heating pack 52 is connected in parallel with the adjustment unit 3. The first heating pack 51 and the second heating pack 52 belong to different heating zones respectively. The semiconductor pipelines in different heating zones are used to transmit different fluids. In this embodiment, the target temperature value of the first heating pack 51 and the target temperature value of the second heating pack 52 may be different. In some examples, the first heating pack 51 is coated on the gas line (Gasline), and the first heating pack 51 is coated on the foreline (Foreline).

[0023] In some embodiments, the heating unit 2 is configured as a fixed resistor in contact with the semiconductor device pipeline; the detection unit 1 is configured as a temperature control couple (Positive Temperature Coefficient Thermistor, PTC), and the temperature control couple is located on the inner side of the heating bag, and is used to output the actual temperature value in real time according to the temperature inside the heating bag.

[0024] In some specific embodiments, the first heating pack 51 and the second heating pack 52 belong to the same heating zone, and the fixed-value resistor in the first heating pack 51 and the fixed-value resistor in the second heating pack 52 have the same resistance value.

[0025] In some other specific embodiments, the first heating pack 51 and the second heating pack 52 belong to different heating zones respectively, and the fixed-value resistor in the first heating pack 51 and the fixed-value resistor in the second heating pack 52 have different resistance values.

[0026] In some embodiments, the heating pack further includes a coating layer; the coating layer is wrapped around the outside of the heating unit 2 to keep the semiconductor equipment pipelines warm.

[0027] In some specific embodiments, the material of the coating layer is foamed silica gel or glass fiber. It is worth noting that the coating layers of the heating packs in the same heating zone are set to be the same material.

[0028] In some embodiments, the adjustment unit 3 is configured as an adjustable load 93, and the adjustable load 93 is located on the outside of the coating; the fixed resistor is connected in parallel with the adjustable load 93 through a reserved joint; one end of the reserved joint connected to the fixed resistor is located inside the coating, and the other end of the reserved joint connected to the adjustable load 93 is located outside the coating.

[0029] like Figure 2 As shown, in some specific embodiments, three heating packages are provided, namely, the first heating package 51, the second heating package 52 and the third heating package 53. The reserved joints include a first reserved joint 61, a second reserved joint 62 and a third reserved joint 63. One end of the first reserved joint 61 is connected to the fixed value resistor in the first heating package 51; the other end of the first reserved joint 61 is connected to the first adjustable load 93 outside the first heating package 51. One end of the second reserved joint 62 is connected to the fixed value resistor in the second heating package 52; the other end of the second reserved joint 62 is connected to the second adjustable load 93 outside the second heating package 52. One end of the third reserved joint 63 is connected to the fixed value resistor in the third heating package 53; the other end of the third reserved joint 63 is connected to the third adjustable load 93 outside the third heating package 53.

[0030] In some other specific embodiments, a main power connector 60 is provided at one end of the first heating package 51 for connecting the power supply unit 4. A first power plug connector 71 is provided between the first heating package 51 and the second heating package 52, and the fixed value resistor in the first heating package 51 is connected in series with the fixed value resistor in the second heating package 52 through the first power plug connector 71. A second power plug connector 72 is provided between the third heating package 53 and the second heating package 52, and the fixed value resistor in the third heating package 53 is connected in series with the fixed value resistor in the second heating package 52 through the second power plug connector 72.

[0031] like Figure 3 As shown, in some embodiments, an insulating outer cover is provided on the outer side of the adjustable load 93; the insulating outer cover includes a cover body 91 and a cover 92; the cover body 91 is movably connected to the cover cover 92; when the cover cover 92 is buckled with the cover body 91, it is used to protect the adjustable load 93; when the cover cover 92 is separated from the cover body 91, it is used to expose the adjustable load 93 for adjustment or maintenance operations.

[0032] In some specific embodiments, the cover body 91 is made of insulating material. The cover cap 92 is rotatably connected to the cover body 91. The cover cap 92 is engaged with or separated from the cover body 91 by rotating the cover cap 92. In other specific embodiments, the cover cap 92 is threadedly connected to the cover body 91.

[0033] In some specific embodiments, the cover 92 is made of a transparent or translucent material, so that the adjustable load 93 is visible when the cover 92 is buckled with the cover body 91. In this embodiment, the adjustable load 93 can be set as a photoresistor, and the resistance value of the photoresistor can be controlled by controlling the light source projected on the photoresistor.

[0034] In some embodiments, a power supply unit 4 is connected to the series circuit; the power supply unit 4 is used to provide a power supply with a constant equivalent voltage to the series circuit.

[0035] In some specific embodiments, the power supply unit 4 is configured as a DC power supply unit 4 .

[0036] In some other specific embodiments, the power supply unit 4 is configured as an AC power supply unit 4, and the AC power supply unit 4 is used to provide a power supply with an equivalent voltage of a constant value.

[0037] In some embodiments, an over-temperature alarm switch (not shown) is also provided in the heating pack; the over-temperature alarm switch is connected in series in the series circuit; the over-temperature alarm switch is used to automatically disconnect the series circuit when it detects that the temperature of the heating pack exceeds a preset threshold value, so as to prevent the semiconductor equipment pipeline from overheating and send out an alarm signal.

[0038] like Figure 4 and Figure 5As shown, a temperature control method is provided in the second embodiment, which is applied to the temperature control device of any one of the above embodiments, including: obtaining the actual temperature value on the semiconductor equipment pipeline covered by the heating unit; comparing the actual temperature value with the target temperature value to obtain the temperature difference detaT1 that the heating unit needs to adjust; determining the specific heat capacity C of the material in the heating bag, calculating the amount of heat required to increase the heating bag to reach the target temperature value, recorded as the first calorific value Q1; obtaining the heat carried away by the gas passing through the semiconductor equipment pipeline according to prior data, recorded as the second calorific value Q2, and the prior data is used to record the heat value carried away by the gas in the semiconductor equipment pipeline per unit time; calculating the sum of the first calorific value Q1 and the second calorific value Q2, recorded as the total calorific value Q; calculating the power value P based on the total calorific value Q and the heating time t; calculating the parallel resistance value required for the heating unit according to the power value and the power supply voltage value; adjusting the resistance value R4 of the adjustment unit outside the heating bag according to the parallel resistance value to adjust the heating power of the heating unit so as to reduce the temperature difference corresponding to each heating bag.

[0039] In some specific embodiments, the power value P satisfies: Q1=Cm(detaT1); Q=Q1+Q2; Q=P*t; P=I^2*R; R=U / I=((R1*R4) / (R1+R4)+R2+R3).

[0040] Wherein, C is the specific heat capacity of the material in the first heating bag. m is the mass of the material in the first heating bag. R1 is the resistance value of the heating unit in the first heating bag. R2 is the resistance value of the heating unit in the second heating bag. R3 is the resistance value of the heating unit in the third heating bag. R4 is the resistance value of the adjustment unit, which is connected in parallel to the heating unit in the first heating bag. I is the total current flowing through the series circuit, and the detection unit and all the heating units constitute the series circuit. U is the total voltage applied by the power supply unit to the series circuit. R is the equivalent total resistance in the series circuit. This embodiment realizes the current control of the heating unit in the first heating bag by setting the adjustment unit, and realizes the precise control of the temperature in the first heating bag.

[0041] In other specific embodiments, similarly, the adjustment unit 3 can be connected in parallel to the second heating bag 52 or the third heating bag 53 to achieve current control of the heating unit 2 in each heating bag, thereby achieving precise control of the temperature in each heating bag to maintain the temperature consistency of the heating bag in each heating zone and avoid condensation of fluid in the semiconductor equipment pipeline to cause blockage.

[0042] In some embodiments, the priori data includes experimental data or simulation data; the heating time is a preset time or is obtained based on the priori data; and the power supply voltage value is an equivalent voltage value preset as a constant value.

[0043] like Figure 6 As shown, a temperature control system is provided in the third embodiment, comprising at least two devices described in any one of the above embodiments, including a first temperature control device and a second temperature control device; the heating unit of the first temperature control device is coated on the outside of the first semiconductor equipment pipeline; the heating unit of the second temperature control device is coated on the outside of the second semiconductor equipment pipeline; the first semiconductor equipment pipeline and the second semiconductor equipment pipeline are used to transmit different fluids; the fluid includes a precursor, a semiconductor process fluid or a heat transfer medium.

[0044] In some specific embodiments, the first semiconductor device pipeline is configured as a gas pipeline. The gas pipeline is connected between a gas source and a reaction chamber. The second semiconductor device pipeline is configured as a front-stage pipeline. The front-stage pipeline is located between the gas source and the gas pipeline.

[0045] In some other specific embodiments, a processing unit 8 is further included, and the processing unit 8 includes a processor and a memory. The processor is connected to the detection unit 1 and is used to perform proportional-integral-derivative (PID) control on the entire series loop.

[0046] It should be noted that the processor in this embodiment can be a processing chip or an integrated circuit chip. In the implementation process, each step of the above method embodiment can be completed by an integrated logic circuit of hardware in the processor or an instruction in the form of software. The above processor can be a general-purpose processor, a digital signal processor (Digital Signal Processor, referred to as DSP), an application-specific integrated circuit (Application Specific Integrated Circuit, referred to as ASIC), a field programmable gate array (Field Programmable Gate Array, referred to as FPGA) or other programmable logic devices. The methods, steps and logic block diagrams disclosed in this embodiment can be implemented or executed. The general-purpose processor can be a microprocessor or the processor can also be any conventional processor, etc. The steps of the method disclosed in combination with this embodiment can be directly embodied as a hardware decoding processor to be executed, or a combination of hardware and software modules in the decoding processor can be executed. The software module can be located in a mature storage medium in the field such as a random access memory, a flash memory, a read-only memory, a programmable read-only memory or an electrically erasable programmable memory, a register, etc. The storage medium is located in the memory, and the processor reads the information in the memory and completes the steps of the above method in combination with its hardware.

[0047] It can be understood that the memory in this embodiment can be a volatile memory or a non-volatile memory, or can include both volatile and non-volatile memories. Among them, the non-volatile memory can be a read-only memory (ROM), a programmable read-only memory (PROM), an erasable programmable read-only memory (EPROM), an electrically erasable programmable read-only memory (EEPROM), or a flash memory. The volatile memory can be a random access memory (RAM), which is used as an external cache. By way of example and not limitation, many forms of RAM are available, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate synchronous DRAM (DDR SDRAM), enhanced synchronous DRAM (ESDRAM), synchronous link DRAM (SLDRAM), and direct RAM (DR RAM). It should be noted that the memory of the systems and methods described herein is intended to include, but is not limited to, these and any other suitable types of memory.

[0048] It is worth noting that if the method is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for enabling an electronic device to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as a USB flash drive, a mobile hard disk, a read-only memory, a random access memory, a magnetic disk or an optical disk.

[0049] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A temperature control device, used for temperature control of semiconductor equipment pipelines, characterized in that: include: A detection unit, at least two heating packs and at least one adjustment unit; Each of the heating packs comprises a heating unit; the heating unit is coated on the outside of the semiconductor equipment pipeline; the heating unit is used to heat the semiconductor equipment pipeline; The detection unit and all the heating units form a series loop, and the heating unit is located inside the heating bag; the detection unit is used to obtain the temperature value inside the heating bag; The adjustment unit is connected in parallel with the heating unit, and the adjustment unit is located outside the heating pack; The adjustment unit and the heating unit connected in parallel are used to share the current in the series circuit; the resistance value of the adjustment unit is determined by the temperature value.

2. The device according to claim 1, characterized in that The heating unit is configured as a fixed value resistor in contact with the semiconductor device pipeline; the detection unit is configured as a temperature control thermocouple, and the temperature control thermocouple is located inside the heating bag and is used to output the actual temperature value in real time according to the temperature inside the heating bag.

3. The device according to claim 2, characterized in that The heating pack also includes a coating layer; the coating layer is wrapped around the outside of the heating unit and is used to keep the semiconductor equipment pipeline warm.

4. The device according to claim 3, characterized in that The adjustment unit is configured as an adjustable load, and the adjustable load is located outside the coating; the fixed resistor is connected in parallel with the adjustable load via a reserved joint; one end of the reserved joint connected to the fixed resistor is located inside the coating, and the other end of the reserved joint connected to the adjustable load is located outside the coating.

5. The device according to claim 4, characterized in that An insulating outer cover is provided on the outer side of the adjustable load; the insulating outer cover includes a cover body and a cover cover; the cover body is movably connected to the cover cover; when the cover cover is buckled with the cover body, it is used to protect the adjustable load; when the cover cover is separated from the cover body, it is used to expose the adjustable load for adjustment or maintenance operations.

6. The device according to claim 1, characterized in that A power supply unit is connected in the series circuit; the power supply unit is used to provide a power supply with a constant equivalent voltage to the detection unit, the heating unit and the adjustment unit.

7. The device according to claim 1, characterized in that An over-temperature alarm switch is also provided in the heating pack; the over-temperature alarm switch is connected in series in the series circuit; the over-temperature alarm switch is used to automatically disconnect the series circuit when it detects that the temperature of the heating pack exceeds a preset threshold value to prevent the semiconductor equipment pipeline from overheating and send out an alarm signal.

8. A temperature control method, applied to the temperature control device according to any one of claims 1 to 7, characterized in that: include: Obtaining an actual temperature value on a semiconductor device pipeline covered by a heating unit; Compare the actual temperature value with the target temperature value to obtain the temperature difference value that needs to be adjusted for the heating unit; Determine the specific heat capacity of the substance in the heating bag, calculate the amount of heat required to increase the heating bag to reach the target temperature value, and record it as a first heat value; The heat carried away by the gas passing through the semiconductor device pipeline is obtained according to the priori data, recorded as a second calorific value, wherein the priori data is used to record the calorific value carried away by the gas in the semiconductor device pipeline per unit time; the sum of the first calorific value and the second calorific value is calculated, recorded as a total calorific value; Calculating a power value based on the total calorific value and the heating time; The parallel resistance value required for the heating unit is calculated according to the power value and the power supply voltage value; the resistance value of the adjustment unit outside the heating package is adjusted according to the parallel resistance value to adjust the heating power of the heating unit so as to reduce the temperature difference corresponding to each heating package.

9. The method according to claim 8, characterized in that The priori data is experimental data or simulation data; the heating time is a preset time or is obtained based on the priori data; and the power supply voltage value is an equivalent voltage value preset as a constant value.

10. The method according to claim 8, characterized in that The heating pack includes a first heating pack, a second heating pack and a third heating pack, wherein the first heating pack, the second heating pack and the third heating pack are each provided with a heating unit; and the total calorific value Q in the first heating pack satisfies: Q=Q1+Q2; Q1=Cm(detaT1); Q = P * t; Wherein, Q1 is the first calorific value corresponding to the first heating bag, Q2 is the second calorific value corresponding to the first heating bag; C is the specific heat capacity of the substance in the first heating bag, m is the mass of the substance in the first heating bag, the temperature difference detaT1 that needs to be adjusted by the heating unit in the first heating bag; t is the heating time, and the power value P satisfies: P=I^2*R; R=U / I=((R1*R4) / (R1+R4)+R2+R3); Among them, R1 is the resistance value of the heating unit in the first heating package, R2 is the resistance value of the heating unit in the second heating package, R3 is the resistance value of the heating unit in the third heating package, R4 is the resistance value of the adjustment unit, the adjustment unit is connected in parallel to the heating unit in the first heating package, I is the total current flowing through the series circuit, the detection unit and all the heating units constitute the series circuit, U is the total voltage applied by the power supply unit to the series circuit, and R is the equivalent total resistance in the series circuit.

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