Gallium oxide thin film and high-temperature layer-by-layer layered sputtering preparation method

Abstract

The invention discloses a gallium oxide thin film and a high-temperature layer-by-layer sputtering preparation method, and belongs to the technical field of semiconductor preparation. In the preparation process of the gallium oxide thin film, under the condition that the substrate is kept at a high temperature, opening and closing of a cabin door below a gallium oxide target material in magnetron sputtering equipment are periodically controlled, so that the cabin door plays a role of a baffle plate, and gallium oxide is sputtered on the substrate in stages; according to the method, in a layer-by-layer and layered sputtering mode, sputtering growth of a gallium oxide film with a plurality of extremely thin atomic layer thicknesses is achieved, that is, direct hot annealing is carried out on the gallium oxide film, sputtering growth of the gallium oxide film with a plurality of extremely thin atomic layer thicknesses is continued, hot annealing is carried out on the gallium oxide film, and circulation is carried out for a plurality of cycles until the target thickness is reached. And an annealing furnace does not need to be used subsequently, and the polycrystalline gallium oxide film with low oxygen vacancy rate, high transmittance and high quality is finally grown on the substrate.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor preparation, and in particular relates to a gallium oxide film and a preparation method thereof by high-temperature layer-by-layer sputtering. Background Art

[0002] Gallium oxide, as a highly anticipated fourth-generation semiconductor material, has excellent performance covering multiple key dimensions such as ultra-high voltage resistance, large current carrying capacity, high power efficiency and low energy loss. In particular, as a transparent conductive oxide, its bandgap is as high as 4.8 eV to 4.9 eV, far exceeding the third-generation semiconductor gallium nitride (bandgap of about 3.4 eV), showing excellent transparency (high transmittance) from visible light to ultraviolet light (265 nm), making it an ideal choice for short-wavelength light-emitting devices and ultraviolet detectors. Monoclinic gallium oxide β-Ga2O3 has become a shining star in the field of ultraviolet light applications due to its excellent chemical and thermal stability.

[0003] Among the various deposition methods for growing gallium oxide thin films, magnetron sputtering is a mature technology that is pollution-free and low-cost. It is very suitable for preparing large-area thin films and is one of the preferred technologies in industrial manufacturing processes. Magnetron sputtering does not rely on complex precursor molecular reactions, but purely relies on physical momentum transfer processes. It is not only more convenient for thermodynamic studies of the deposition of undoped and doped gallium oxide films, but also a faster and lower-cost method. For pure gallium oxide ceramic targets, magnetron sputtering needs to be performed in RF mode. By applying a high-frequency RF electric field between the two stages of the equipment, it is easier for electrons to obtain energy from the high-frequency RF electric field and collide with argon atoms to generate argon plasma. In the RF magnetron sputtering mode, in the argon plasma, electrons show more obvious energy absorption and oscillation, thereby increasing the probability of collision with argon gas particles, thereby further increasing the ionization rate of argon gas particles.

[0004] Although the currently mature RF mode magnetron sputtering technology can grow gallium oxide thin films quickly and at low cost over a large area, under room temperature conditions, the gallium oxide sputtered on the substrate is formed in the form of "island" → "layer" → "island layer" and the generated gallium oxide film is mainly amorphous and has many defects, resulting in reduced transmittance, which completely eliminates the inherent high transmittance advantage of single crystal and polycrystalline gallium oxide in the band after 265 nm. Amorphous low-transmittance gallium oxide films cannot effectively prepare ultraviolet light detection devices.

[0005] High temperature thermal annealing is the most commonly used and effective technology to transform amorphous gallium oxide thin films grown by sputtering into polycrystalline gallium oxide thin films. Whether using ordinary thermal annealing process or rapid thermal annealing process, the basic principle is to use high temperature (usually the temperature range is 700 ~ 900 ° C) to transform gallium oxide from amorphous state to polycrystalline state as much as possible. During high temperature annealing, a specific gas environment (atmosphere) is combined, such as oxygen. Oxygen gas molecules decompose into oxygen atoms at high temperature and enter gallium oxide. While the amorphous state is transformed into the polycrystalline state, some oxygen vacancies are also filled. However, high temperature will inevitably generate new oxygen vacancies. Summary of the invention

[0006] The purpose of the present invention is to overcome the shortcomings of the above-mentioned prior art and provide a gallium oxide film and a method for preparing the same by high-temperature layer-by-layer sputtering, so as to solve the problem in the prior art that oxygen will decompose into oxygen atoms during high-temperature annealing to fill part of the oxygen vacancies, but at high temperatures, new oxygen vacancies will also be generated during the process of converting the amorphous gallium oxide film into a polycrystalline gallium oxide film.

[0007] In order to achieve the above object, the present invention adopts the following technical solutions: A method for preparing a gallium oxide thin film by high-temperature layer-by-layer sputtering, in which magnetron sputtering is continuously performed in a magnetron sputtering device, and the following process is repeated: S1, open the hatch, the target and the substrate face each other, and the gallium oxide separated by sputtering on the target falls on the substrate; S2, closing the hatch, which isolates the target and the substrate, and the sputtered gallium oxide falls on the hatch; the substrate is heated, and the gallium oxide on the substrate is annealed; After the cycles S1 and S2 are repeated for a set number of times, a gallium oxide thin film is obtained.

[0008] A further improvement of the present invention is: Preferably, in S1, the time for opening the hatch is determined according to the amount of gallium oxide sputtered at one time.

[0009] Preferably, in S1, the door opening time is 30-70s.

[0010] Preferably, in S2, the time for closing the hatch each time is determined according to the gallium oxide annealing time.

[0011] Preferably, in S2, the door closing time is 30-70s.

[0012] Preferably, the number of times S1 and S2 are repeated is determined according to the thickness of the low oxygen vacancy potassium oxide film.

[0013] Preferably, during the magnetron sputtering process, the substrate is Al2O3 with a (0001) plane, and the substrate heating temperature is 600-800°C.

[0014] Preferably, S1 and S2 are repeated once, and the thickness of the formed gallium oxide film is 6-8 nm.

[0015] Preferably, the annealing temperature is 600-800°C.

[0016] A gallium oxide film prepared by any one of the above-mentioned high-temperature layer-by-layer sputtering preparation methods, wherein the thickness of the gallium oxide film is 193-207 nm.

[0017] Compared with the prior art, the present invention has the following beneficial effects: The invention discloses a method for preparing a gallium oxide film by high-temperature layer-by-layer sputtering. In the preparation process, under the condition that the substrate is kept at a high temperature, the hatch below the gallium oxide target of the magnetron sputtering equipment is periodically controlled to "open" and "close", so that the hatch acts as a baffle. When the gallium oxide that needs to be magnetron sputtered falls on the substrate, the hatch is opened, and the gallium oxide on the target falls on the substrate. When the fallen gallium oxide needs to grow, the hatch is closed, and the gallium oxide on the target falls on the hatch. The "island-shaped" gallium oxide already on the substrate grows under the condition of substrate heating; since the thickness of only a few atoms is formed each time, as soon as the film is prepared, under the action of high temperature, the amorphous gallium oxide molecules can be rearranged in a certain crystal direction in the local atmosphere, so that it is transformed into an overall polycrystalline β-Ga2O3, and the heat conduction of the annealing process is more rapid, effective and uniform. The transformation of the extremely thin gallium oxide film from the amorphous state to the polycrystalline state can be completed comprehensively and uniformly in a shorter thermal annealing time. And precisely because high-temperature annealing takes a short time, at high temperatures, the oxygen atoms in the newly arranged β-Ga2O3 will not be affected by the long-term continuous high temperature and will not overflow the film again, becoming oxygen vacancy defects, resulting in reduced transmittance; this method uses a layer-by-layer and layered sputtering method to achieve sputtering growth of an extremely thin layer of gallium oxide film with a thickness of several atomic layers, and then directly anneal it, and then continue to sputter grow an extremely thin layer of gallium oxide film with a thickness of several atomic layers and then thermally anneal it in situ, repeating multiple cycles until the target thickness is reached, and there is no need to use an annealing furnace subsequently, and finally a method for growing a low oxygen vacancy rate, high transmittance and high-quality polycrystalline gallium oxide film on a substrate is obtained. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 This is a schematic diagram of the ordinary high temperature annealed β-Ga2O3 crystal structure; Figure 2 It is a schematic diagram of the crystal structure of the ultra-thin β-Ga2O3 of the present invention after short-time high-temperature annealing in a sputtering system; Figure 3 The spectrum and corresponding analysis of gallium oxide thin films; Among them, (a) is the X-ray diffraction pattern (XRD) of the sputtered gallium oxide film; (b) is a quantitative comparison of the XRD pattern of the sputtered gallium oxide film at the (-402) crystal plane full width at half maximum (FWHM) and grain size under four sputtering parameters; (c) is a quantitative comparison of the XRD pattern of the sputtered gallium oxide film at the (-201) crystal plane full width at half maximum (FWHM) and grain size under several sputtering parameters; (d) is a quantitative comparison of the XRD pattern of the sputtered gallium oxide film at the (-201) crystal plane interplanar spacing ( d -spacing), dislocation density, and micro-strain.

[0019] Figure 4 Scanning electron microscope (SEM) top view and cross-sectional images of the sputtered gallium oxide film; (a) shows a single overall sputtering of the substrate at room temperature, followed by annealing in an annealing furnace at 700 °C; (b) shows multi-cycle layer-by-layer sputtering with a substrate temperature of 600 °C; (c) shows multi-cycle layer-by-layer sputtering with a substrate temperature of 700 °C; (d) shows multi-cycle layer-by-layer sputtering with a substrate temperature of 800 °C.

[0020] Figure 5 The full XPS spectrum, oxygen-gallium ratio (O / Ga) and ratio comparison of lattice oxygen and non-lattice oxygen under different sputtering modes; (a) is the full XPS spectrum under different sputtering modes; (b) is the oxygen-gallium ratio (O / Ga) calculated by XPS under different sputtering modes; (c) is the ratio comparison of lattice oxygen and non-lattice oxygen calculated by XPS under different sputtering modes. DETAILED DESCRIPTION

[0021] The present invention is further described in detail below in conjunction with the accompanying drawings: In order to enable those skilled in the art to understand the characteristics and effects of the present invention, the following is a general description and definition of the terms and expressions mentioned in the specification and claims. Unless otherwise specified, all technical and scientific terms used in the text are the common meanings understood by those skilled in the art for the present invention. In the event of a conflict, the definition in this specification shall prevail.

[0022] In this document, unless otherwise specified, “includes,” “including,” “contains,” “has,” or similar terms cover the meanings of “consisting of” and “mainly consisting of,” for example, “A includes a” covers the meanings of “A includes a and other” and “A only includes a.”

[0023] The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall within the scope limited by the appended claims of the application equally.

[0024] The following examples use conventional instruments and equipment in the art. The experimental methods in the following examples where specific conditions are not specified are usually carried out under conventional conditions or under conditions recommended by the manufacturer. The various raw materials used in the following examples are conventional commercial products unless otherwise specified, and their specifications are conventional specifications in the art. In the specification of the present invention and the following examples, unless otherwise specified, "%" means weight percentage, "part" means weight part, and ratio means weight ratio.

[0025] Usually, from the perspective of effective implementation of the process, the sputtering must be completed, the sputtering target thickness of the gallium oxide film has been reached, and the gallium oxide film has a certain thickness, which is at least greater than a dozen nanometers, reaching hundreds of nanometers, or even tens of microns or hundreds of microns - all very common thicknesses, and then the amorphous gallium oxide film with a certain thickness is subjected to subsequent thermal annealing as a whole. Obviously, through heat conduction, the temperature acts on many layers of stacked amorphous gallium oxide molecules from the outside to the inside and from top to bottom. The heat transfer requires a process, and the high temperature effect must be uneven. In contrast, if the gallium oxide film grown by sputtering is only a few atomic layers thick, although this gallium oxide film with a thickness of several atomic layers is also formed in the form of "island" → then "layer" → then "island layer" during the sputtering process, it is still amorphous. However, it is precisely because of the thickness of only a few atoms that, under the action of high temperature, the amorphous gallium oxide molecules are rearranged in a certain crystal direction in the local atmosphere, transforming it into the overall polycrystalline β-Ga2O3, and the heat conduction is bound to be faster, more effective, and more uniform. The transformation of the extremely thin gallium oxide film from amorphous to polycrystalline can be completed more comprehensively and uniformly in a shorter thermal annealing time. And because the high-temperature annealing time is short, at high temperatures, the oxygen atoms in the newly arranged β-Ga2O3 will not be affected by the long-term continuous high temperature and overflow the film again, becoming oxygen vacancy defects, resulting in reduced transmittance.

[0026] Based on the above idea, the present invention only uses magnetron sputtering equipment to grow gallium oxide, and no annealing furnace is used subsequently. Under the condition that the sapphire substrate is kept at a high temperature in the magnetron sputtering equipment, the hatch under the gallium oxide target of the magnetron sputtering equipment is periodically controlled to be "opened" and "closed", so as to achieve a layer-by-layer and layered simulation. Specifically, the following steps are included: Step 1: Place the target material and the substrate, introduce a mixed gas of argon and oxygen, and start magnetron sputtering. During the magnetron sputtering process, the substrate is always in a heated state.

[0027] Step 2, open the hatch, remove the hatch from between the target and the substrate, and perform sputtering for a very short time. The sputtered gallium oxide falls off the target and falls on the substrate opposite to the target. The substrate is always in a heated state during the sputtering process. In this step, the fallen gallium oxide is in the form of "small balls" or "sheets" on the substrate.

[0028] Step 3, close the hatch, move the hatch to between the target material and the substrate, and perform in-situ thermal annealing on the extremely thin gallium oxide film with a thickness of several atomic layers deposited on the sapphire substrate. During this process, magnetron sputtering is continued, and the sputtered gallium oxide falls on the hatch; in the previous process, the fallen individual gallium oxide begins to grow under the action of heating, forming an "island" shape, and continues to expand into a layered shape.

[0029] Step 4, open the hatch again, remove the hatch from between the target and the substrate, and perform sputtering for a very short time. The sputtered gallium oxide falls off the target and falls on the substrate opposite to the target, forming a very thin film of gallium oxide with a thickness of several atoms. Step 5, close the hatch again, and perform thermal annealing on the gallium oxide film with a thickness of several atomic layers deposited on the sapphire substrate again. During this process, the newly dropped gallium oxide film can grow better along the preferred orientation with the help of the grains in the previous film that have been crystallized and grown.

[0030] It should be understood that in the above process, magnetron sputtering is always in progress, but the position where the sputtered gallium oxide falls is different due to the movement of the hatch.

[0031] In some embodiments of the present invention, in step 1 and step 4, the time for opening the hatch is determined according to the amount of gallium oxide sputtered at one time. The longer the hatch is opened at one time, the more gallium oxide will drop at one time.

[0032] Preferably, in step 1 and step 4, the time for opening the hatch is 30-70 seconds, illustratively 30 seconds, 40 seconds, 50 seconds, 60 seconds and 70 seconds, more preferably 45 seconds.

[0033] In some embodiments of the present invention, in step 2 and step 5, in step (2), the time for closing the hatch each time is determined according to the gallium oxide annealing growth time.

[0034] Preferably, in step 2 and step 5, the time for closing the hatch is 30-70 seconds, and exemplary times may be 30 seconds, 40 seconds, 50 seconds, 60 seconds and 70 seconds.

[0035] In some embodiments of the present invention, during magnetron sputtering, a mixed gas of argon and oxygen is continuously introduced, with the volume proportion of oxygen being 2.5-10%, wherein the argon gas is used for ionization, and the introduced oxygen is used to partially supplement oxygen vacancies during sputtering and annealing.

[0036] In some embodiments of the present invention, the number of times of repeating step 4 and step 5 is determined according to the thickness of the low oxygen vacancy potassium oxide film.

[0037] In some embodiments of the present invention, during step 4 and step 5, the substrate is continuously heated to 600-800° C., which is also the annealing temperature.

[0038] In some embodiments of the present invention, the thickness of a single-layer film obtained by annealing after each sputtering is 6-8 nm.

[0039] In some embodiments of the present invention, in terms of selecting a substrate, the present invention selects (0001) Al2O3 (sapphire) with a smaller lattice constant mismatch rate with gallium oxide as the substrate for the sputtered Ga2O3 film. Before sputtering, the sapphire substrate is first ultrasonically cleaned with an organic solvent and deionized water. The specific process is: acetone (ultrasonic cleaning for 10 minutes) → ethanol (ultrasonic cleaning for 10 minutes) → deionized water (ultrasonic cleaning for 10 minutes), and then blown dry with a nitrogen gun to remove impurities and oxides on its surface.

[0040] The second aspect of the present invention discloses a gallium oxide film, which is repeatedly cycled through the above-mentioned method of opening and closing the hatch until the target thickness is reached. Finally, a low oxygen vacancy rate, high transmittance, high-quality polycrystalline β-Ga2O3 film with a thickness of 193-207nm is directly generated on a sapphire substrate.

[0041] The following is further described in conjunction with specific embodiments.

[0042] Example 1 Place the cleaned sapphire substrate into the magnetron sputtering equipment. The specific sputtering parameters are shown in the following table.

[0043] Table 1 Parameters of high-temperature layer-by-layer preparation of gallium oxide thin films under RF magnetron mode

[0044] contrast Figure 1 and Figure 2 It can be seen that Figure 1 The common subsequent high temperature annealing causes oxygen vacancies and gallium displacement (i.e., the generation of non-lattice oxygen and non-lattice gallium); Figure 2In the middle, ultra-thin β-Ga2O3 is annealed in situ in a sputtering system at high temperature for a short time, with few oxygen vacancies and less chance of gallium displacement (i.e., reducing non-lattice oxygen and non-lattice gallium).

[0045] See also Figure 3 The graphs and corresponding analysis graphs of the gallium oxide film prepared by the above preparation method are shown in Figure (a), where (a) is the X-ray diffraction graph (XRD) of the gallium oxide film generated by sputtering. The four XRD graphs are: the substrate is kept at 600°C during sputtering, and the parameters in Table 1 are used for multi-layer sputtering; the substrate is kept at 700°C during sputtering, and the parameters in Table 1 are used for multi-layer sputtering; the substrate is kept at 800°C during sputtering, and the parameters in Table 1 are used for multi-layer sputtering; ordinary sputtering is used for continuous 1275s at room temperature, and after sputtering is completed, a high-temperature annealing furnace is used for annealing at 700°C. Figure 3 As can be seen from (a) in the figure, under the four sputtering modes, the gallium oxide films are all polycrystalline β-Ga2O3 with {-201} as the preferred orientation. Figure 3 (a) in the figure also shows qualitatively that when sputtering, the substrate is kept at 700°C for multi-layer sputtering, and the XRD half-width (FWHM) of the (-402) β-Ga2O3 crystal plane is optimal, and the crystal quality is the best.

[0046] Figure 3 Figure (b) shows quantitatively that: -(1) The XRD patterns of the gallium oxide films generated under the four sputtering modes all have diffraction peaks on the (-402) crystal plane; -(2) When the substrate temperature is kept at 700 °C for multi-layer sputtering, the full width at half maximum (FWHM) on the (-402) crystal plane is the smallest, the grain size is the largest, and the crystal quality is the best. -(3) When the conventional sputtering method is used for continuous 1275 s at room temperature and then annealed at 700 °C in a high-temperature annealing furnace, the full width at half maximum (FWHM) on the (-402) crystal plane is the largest, the grain size is the smallest, and the crystal quality is relatively the worst.

[0047] Figure 3Figure (c) shows a quantitative comparison of the full width at half maximum (FWHM) and grain size of the sputtered gallium oxide film XRD patterns at the (-201) crystal plane under several sputtering parameters. It can be quantitatively seen that: -(1) The three XRD patterns of the gallium oxide films prepared by layer-by-layer sputtering all form diffraction peaks at the (-201) crystal plane; while the gallium oxide film prepared by ordinary sputtering for 1275 seconds at room temperature and then annealed at 700 °C in a high-temperature annealing furnace does not form a diffraction peak at the (-201) crystal plane. -(2) When sputtering, the substrate is kept at 700 °C for multi-layer layer-by-layer sputtering, and the full width at half maximum (FWHM) at the (-201) crystal plane is the smallest, the grain size is the largest, and the crystal quality is the best.

[0048] comprehensive Figure 3 It can be seen from Figures (b) and (c) that: --(1) The crystallization quality of the high-temperature layered sputtering method is better than that of the ordinary continuous sputtering and annealing method; --Whether it is the (-201) crystal plane or the (-402) crystal plane, the crystallization quality of the substrate maintained at 700°C is relatively best when the high-temperature layered sputtering method is used.

[0049] Figure 3 Figure (d) shows the XRD patterns of the sputtered gallium oxide films under several sputtering parameters. d -spacing), dislocation density, and micro-strain. As shown in Figure (d), when sputtering, the substrate is kept at 700 °C for multi-layer sputtering, and the interplanar spacing, dislocation density, and micro-stress are all minimized. This shows that when the substrate is annealed at 700 °C in situ, the probability of gallium displacement is minimized, and the corresponding defects introduced are minimized. From the perspective of low gallium displacement rate, the crystal quality is optimal.

[0050] Figure 4 The top view and cross-sectional view of the sputtered gallium oxide film are obtained by scanning electron microscope (SEM). From the top view of SEM, we can see that: (1) Regardless of which sputtering method is used, the gallium oxide generated is polycrystalline with grain boundaries because high temperature annealing is used. The specific grain size is determined by the above Figure 3 Figure (b) and Figure 3 Figure (c) has been quantitatively compared. (2) Regardless of which sputtering method is used, the actual length of time the sputtering door remains open is 1275s. From the SEM cross-sectional image, the film thickness is consistent, all 200±7nm.

[0052] See also Figure 5The full spectrum and oxygen-gallium ratio of XPS under different sputtering modes. It can be seen from the figure that (1) in the multi-layer sputtering mode with a substrate temperature of 700 °C, the proportion of O in the gallium oxide film (1) is higher than that under the other three sputtering parameters. (2) In the multi-layer sputtering mode with a substrate temperature of 700 °C, the oxygen-gallium ratio (O / Ga) = 1.35, which is closest to the ideal atomic ratio (stoichiometric ratio) of β-Ga2O3, which is 1.5. It can be seen from Figure (c) that in the multi-layer sputtering mode with a substrate temperature of 700 °C, the ratio of lattice oxygen to non-lattice oxygen in the gallium oxide film is the highest, indicating that the multi-layer sputtering mode with a substrate temperature of 700 °C has the least oxygen vacancies and the best crystal quality.

[0053] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering, characterized in that: In the magnetron sputtering equipment, magnetron sputtering is continuously performed, repeating the following process: S1, open the hatch, the target and the substrate face each other, and the gallium oxide separated by sputtering on the target falls on the substrate; S2, closing the hatch, which isolates the target and the substrate, and the sputtered gallium oxide falls on the hatch; the substrate is heated, and the gallium oxide on the substrate is annealed; After the cycles S1 and S2 are repeated for a set number of times, a gallium oxide thin film is obtained.

2. The method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering according to claim 1, characterized in that: In S1, the time for opening the hatch is determined according to the amount of gallium oxide sputtered at one time.

3. The method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering according to claim 2, characterized in that: In S1, the hatch opening time is 30-70s.

4. The method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering according to claim 1, characterized in that: In S2, the time for closing the hatch each time is determined according to the gallium oxide annealing time.

5. The method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering according to claim 4, characterized in that: In S2, the hatch closing time is 30-70s.

6. The method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering according to claim 1, characterized in that: The number of repetitions of S1 and S2 is determined according to the thickness of the low oxygen vacancy potassium oxide film.

7. The method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering according to claim 1, characterized in that: During the magnetron sputtering process, the substrate is Al2O3 with (0001) plane, and the substrate heating temperature is 600-800℃.

8. The method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering according to claim 1, characterized in that: S1 and S2 are repeated once, and the thickness of the formed gallium oxide film is 6-8nm.

9. The method for preparing a gallium oxide thin film by high temperature layer-by-layer sputtering according to claim 1, characterized in that: The annealing temperature is 600-800°C.

10. A gallium oxide film prepared by the high temperature layer-by-layer sputtering preparation method according to any one of claims 1 to 9, characterized in that: The thickness of the gallium oxide film is 193-207 nm.

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