Method and system for testing electrical performance of surface temperature sensor chip

Abstract

The invention discloses a surface temperature sensor chip electrical performance testing method and system, and belongs to the technical field of electrical performance testing. According to the invention, a sensor chip is tested in temperature change environments with low, medium and high speeds, and corresponding voltage value signals are obtained; secondly, performing fine segmentation on the signals according to time points of a temperature rise stage to form a signal slice set; then, a response characteristic value, a stable characteristic value and a transition characteristic value are extracted from the signal slices; further, calculating performance coefficients at different speeds based on the characteristic values; and finally, an enhancement value is calculated through the response characteristic value, the performance coefficients are averaged and enhanced, and finally an electrical performance evaluation value is obtained. According to the invention, systematic testing is carried out on the sensor chip in temperature change environments with different speeds, so that the accuracy of electrical performance testing is remarkably improved.

Description

Technical Field

[0001] The present invention relates to the technical field of electrical performance testing, and in particular to a method and system for testing the electrical performance of a surface temperature sensor chip. Background Art

[0002] In the field of modern electronic technology and sensors, surface temperature sensor chips are key devices for temperature detection and are widely used in many fields such as industrial process control, medical equipment, consumer electronics, and aerospace. Traditional temperature sensor performance evaluation methods are usually limited to a single test in a static environment, which makes it difficult to fully reflect the actual electrical performance of the sensor under different dynamic temperature change conditions. The current testing technology mainly has the following technical problems: the existing evaluation methods often ignore the significant impact of the temperature change rate on the electrical characteristics of the sensor, and cannot accurately capture the subtle electrical performance differences of the sensor in low-speed, medium-speed and high-speed temperature change environments, resulting in low accuracy of electrical performance testing. Summary of the invention

[0003] In view of the above-mentioned deficiencies in the prior art, the present invention provides a method for testing the electrical properties of a surface temperature sensor chip, which solves the problem of low electrical properties testing accuracy in the prior art.

[0004] In order to achieve the above-mentioned purpose of the invention, the technical solution adopted by the present invention is: a method for testing the electrical performance of a surface temperature sensor chip, comprising the following steps: S1, placing the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal; S2. According to the time point of the heating stage, the low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal are respectively segmented to construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set and a high-speed voltage value signal slice set; S3, extracting response eigenvalues, stable eigenvalues ​​and transition eigenvalues ​​from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set respectively; S4. Calculate the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value and the transition characteristic value; S5. Calculate the enhancement value according to the response characteristic value, enhance the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient, and obtain the electrical performance evaluation value.

[0005] Furthermore, the low-speed temperature change environment in S1 is specifically as follows: set the starting temperature T0, increase the temperature by 5°C in the first R1 time of each subsequent heating stage, and maintain the heated temperature for the last R2 time of each heating stage until the target temperature is reached, where R1 is the heating time in each heating stage, and R2 is the temperature maintenance time in each heating stage; The medium-speed temperature change environment is as follows: set the starting temperature T0, increase the temperature by 10°C in the first R1 time of each subsequent heating stage, and maintain the increased temperature in the last R2 time of each heating stage until the target temperature is reached; The high-speed temperature change environment is as follows: set the starting temperature T0, increase the temperature by 15°C in the first R1 time of each subsequent heating stage, and maintain the heated temperature in the last R2 time of each heating stage until the target temperature is reached.

[0006] Further, S2 includes the following sub-steps: S21, marking the time point of each heating stage in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed time point sequence, a medium-speed time point sequence, and a high-speed time point sequence; S22, dividing the low-speed voltage value signal at each time point in the low-speed time point sequence to obtain a plurality of signal slices, arranging the plurality of signal slices in chronological order, and constructing a set of low-speed voltage value signal slices; S23, dividing the medium-speed voltage value signal at each time point in the medium-speed time point sequence to obtain multiple signal slices, arranging the multiple signal slices in chronological order, and constructing a medium-speed voltage value signal slice set; S24, dividing the high-speed voltage value signal at each time point in the high-speed time point sequence to obtain a plurality of signal slices, arranging the plurality of signal slices in chronological order, and constructing a high-speed voltage value signal slice set.

[0007] Furthermore, S3 includes the following sub-steps: S31, dividing the signal slices into two parts in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set, respectively, to obtain a response part and a stable part; S32, calculating the response characteristic value for the response part, and calculating the stable characteristic value for the stable part; S33, taking the connection position of the response part and the stable part in a signal slice as the center; S34, taking L voltage values ​​in the left and right neighborhoods of the center, where L is a positive integer; S35. When the voltage value obtained in S34 is greater than the voltage average value of the stable part, the corresponding voltage value is a transition voltage value, and a transition characteristic value is calculated.

[0008] Further, S31 includes the following sub-steps: S311, extracting signal slices from a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set, and a high-speed voltage value signal slice set; S312, calculating a voltage change value of each voltage value in the signal slice; S313, segmenting the signal slice according to the position of the maximum voltage change value to obtain a response part and a stable part.

[0009] Furthermore, the formula for calculating the response characteristic value in S32 is: , where ε n is the nth response eigenvalue, V n,i is the ith voltage value in the response portion of the nth signal slice, V n,i-1 is the i-1th voltage value in the response part of the nth signal slice, n and i are positive integers, △τ is the interval time, and N is the number of voltage values ​​in the response part; The formula for calculating the transition characteristic value in S35 is: , where γ n is the nth transition characteristic value, V n,k is the kth transition voltage value on the nth signal slice, V n,c is the voltage mean of the stable part of the nth signal slice, K is the number of transition voltage values, and n and k are positive integers.

[0010] Further, S4 includes the following sub-steps: S41, arranging the response eigenvalue, stable eigenvalue and transition eigenvalue of the same signal slice in sequence to construct a eigenvector; S42, calculating the performance coefficient according to each characteristic vector corresponding to the low-speed voltage value signal slice set to obtain a low-speed performance coefficient; S43, calculating the performance coefficient according to each characteristic vector corresponding to the medium-speed voltage value signal slice set to obtain the medium-speed performance coefficient; S44. Calculate the performance coefficient according to each characteristic vector corresponding to the high-speed voltage value signal slice set to obtain a high-speed performance coefficient.

[0011] Furthermore, the formula for calculating the performance coefficient in S42, S43 and S44 is: , where μ is the performance coefficient, | | is the absolute value, and r n,j is the jth element in the nth eigenvector, M is the number of eigenvectors, and n and j are positive integers.

[0012] Further, S5 includes the following steps: S51, taking the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient to obtain a performance average; S52, taking the average of each response characteristic value corresponding to the low-speed voltage value signal slice set to obtain a low-speed response mean; S53, taking the average of each response characteristic value corresponding to the medium-speed voltage value signal slice set to obtain a medium-speed response mean; S54, taking an average of each response characteristic value corresponding to the high-speed voltage value signal slice set to obtain a high-speed response average; S55. Calculate the enhancement value according to the low-speed response mean, the medium-speed response mean, and the high-speed response mean: , where z is the enhancement value, ε low is the low speed response mean, ε mid is the mean value of medium-speed response, ε high is the high-speed response mean; S56. Enhance the performance mean value to obtain the electrical performance evaluation value: , where h is the electrical performance evaluation value, μ c is the mean performance value.

[0013] A surface temperature sensor chip electrical performance test system, comprising: an acquisition unit, a segmentation unit, a feature extraction unit, a performance coefficient calculation unit and an evaluation unit; The acquisition unit is used to place the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal; The segmentation unit is used to segment the low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal according to the time point of the heating stage, and construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set and a high-speed voltage value signal slice set; The feature extraction unit is used to extract response characteristic values, stable characteristic values ​​and transition characteristic values ​​from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set respectively; The performance coefficient calculation unit is used to calculate the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value and the transition characteristic value; The evaluation unit is used to calculate the enhancement value according to the response characteristic value, enhance the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient, and obtain the electrical performance evaluation value.

[0014] In summary, the beneficial effects of the present invention are: 1. The present invention can comprehensively and accurately capture the electrical performance characteristics of the sensor at different temperature change rates by testing the sensor chip in low-speed, medium-speed and high-speed temperature change environments. The accuracy and reliability of the electrical performance test are significantly improved by carefully slicing and extracting characteristic values ​​of the voltage value signal.

[0015] 2. The present invention uses multi-dimensional analysis of response eigenvalues, stable eigenvalues ​​and transition eigenvalues, so that performance evaluation is no longer limited to a single static indicator, but can fully reflect the changes in the electrical characteristics of the sensor in a dynamic temperature change environment.

[0016] 3. The present invention further improves the accuracy of electrical performance testing by calculating the enhancement value and enhancing the performance coefficient mean. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a flow chart of a method for testing the electrical performance of a surface temperature sensor chip; Figure 2 is a schematic diagram of the first temperature increase change; Figure 3 is a schematic diagram of the second temperature increase change; Figure 4 This is a schematic diagram of the third temperature increase change. DETAILED DESCRIPTION

[0018] The specific implementation modes of the present invention are described below so that those skilled in the art can understand the present invention. However, it should be clear that the present invention is not limited to the scope of the specific implementation modes. For those of ordinary skill in the art, as long as various changes are within the spirit and scope of the present invention as defined and determined by the attached claims, these changes are obvious, and all inventions and creations utilizing the concept of the present invention are protected.

[0019] Embodiment 1, as Figure 1 As shown, a method for testing the electrical performance of a surface temperature sensor chip comprises the following steps: S1, placing the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal; S2. According to the time point of the heating stage, the low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal are respectively segmented to construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set and a high-speed voltage value signal slice set; S3, extracting response eigenvalues, stable eigenvalues ​​and transition eigenvalues ​​from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set respectively; S4. Calculate the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value and the transition characteristic value; S5. Calculate the enhancement value according to the response characteristic value, enhance the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient, and obtain the electrical performance evaluation value.

[0020] In this embodiment, the surface temperature sensor chip is placed at the center of the temperature box.

[0021] The low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal are voltage signals output by the surface temperature sensor chip under different environments.

[0022] In this embodiment, the low-speed temperature change environment in S1 is specifically as follows: set the starting temperature T0, increase the temperature by 5°C in the first R1 time of each subsequent heating stage, and maintain the heated temperature for the last R2 time of each heating stage until the target temperature is reached, where R1 is the heating time in each heating stage, and R2 is the temperature maintenance time in each heating stage; The medium-speed temperature change environment is as follows: set the starting temperature T0, increase the temperature by 10°C in the first R1 time of each subsequent heating stage, and maintain the increased temperature in the last R2 time of each heating stage until the target temperature is reached; The high-speed temperature change environment is as follows: set the starting temperature T0, increase the temperature by 15°C in the first R1 time of each subsequent heating stage, and maintain the heated temperature in the last R2 time of each heating stage until the target temperature is reached.

[0023] Specifically: The starting temperature of the slow temperature change environment is set to 70°C, and the temperature is increased by 5°C in the first 30 seconds of each minute, and the temperature is maintained at the increased temperature in the last 30 seconds of each minute until it reaches 100°C. Figure 2 As shown; The medium-speed temperature change environment sets the starting temperature to 70°C, then increases the temperature by 10°C in the first 30 seconds of each minute, and maintains the increased temperature in the last 30 seconds of each minute until it reaches 100°C. Figure 3 As shown; The high-speed temperature change environment sets the starting temperature to 70°C, then increases the temperature by 15°C in the first 30 seconds of each minute, and maintains the increased temperature in the last 30 seconds of each minute until it reaches 100°C. Figure 4 shown.

[0024] In this embodiment, S2 includes the following sub-steps: S21, marking the time point of each heating stage in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed time point sequence, a medium-speed time point sequence, and a high-speed time point sequence; S22, dividing the low-speed voltage value signal at each time point in the low-speed time point sequence to obtain a plurality of signal slices, arranging the plurality of signal slices in chronological order, and constructing a set of low-speed voltage value signal slices; S23, dividing the medium-speed voltage value signal at each time point in the medium-speed time point sequence to obtain multiple signal slices, arranging the multiple signal slices in chronological order, and constructing a medium-speed voltage value signal slice set; S24, dividing the high-speed voltage value signal at each time point in the high-speed time point sequence to obtain a plurality of signal slices, arranging the plurality of signal slices in chronological order, and constructing a high-speed voltage value signal slice set.

[0025] In this embodiment, the length of a heating stage is 60 seconds. Therefore, the length of the marked time point is 60 seconds, and the voltage value signal corresponding to the time length of a heating stage is divided into a signal slice, which is convenient for analyzing the response and stability of the signal slice corresponding to each heating stage.

[0026] In this embodiment, S3 includes the following sub-steps: S31, dividing the signal slices into two parts in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set, respectively, to obtain a response part and a stable part; S32, calculating the response characteristic value for the response part, and calculating the stable characteristic value for the stable part; S33, taking the connection position of the response part and the stable part in a signal slice as the center; S34, taking L voltage values ​​in the left and right neighborhoods of the center, where L is a positive integer; S35. When the voltage value obtained in S34 is greater than the voltage average value of the stable part, the corresponding voltage value is a transition voltage value, and a transition characteristic value is calculated.

[0027] In the present invention, since the signal slice corresponds to a heating stage, and the heating stage includes 30 seconds of ambient temperature heating and 30 seconds of stabilization, a signal slice is divided into two parts: a response part and a stable part to test the performance of the surface temperature sensor chip in following temperature changes.

[0028] In this embodiment, S31 includes the following sub-steps: S311, extracting signal slices from a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set, and a high-speed voltage value signal slice set; S312, calculating a voltage change value of each voltage value in the signal slice; S313, segmenting the signal slice according to the position of the maximum voltage change value to obtain a response part and a stable part.

[0029] The formula for calculating the voltage change value in S312 is: , where θ i is the voltage change value of the ith voltage value, V i is the ith voltage value, V i-1 is the i-1th voltage value, V i+1 is the i+1th voltage value, i is a positive integer, and △τ is the interval time.

[0030] The present invention finds the turning point of the response part and the stable part by the voltage change value, and divides the response part and the stable part. In this embodiment, the curvature of each voltage value in the signal slice can also be calculated to find the location of the maximum curvature and divide the response part and the stable part.

[0031] In this embodiment, the formula for calculating the response characteristic value in S32 is: , where ε n is the nth response eigenvalue, V n,i is the ith voltage value in the response portion of the nth signal slice, V n,i-1 is the i-1th voltage value in the response part of the nth signal slice, n and i are positive integers, △τ is the interval time, and N is the number of voltage values ​​in the response part.

[0032] The present invention calculates the average voltage change speed in the response part, reflecting the follow-up ability of the temperature sensor to the temperature change.

[0033] The formula for calculating the stable eigenvalue in S32 is: , where s n is the nth stable eigenvalue, V n,m is the mth voltage value in the stable part of the nth signal slice, V n,c is the voltage mean of the stable part of the nth signal slice, || is the absolute value operation, and B is the number of voltage values ​​in the stable part.

[0034] The stable characteristic value in the present invention reflects the voltage stability of the stable part of the signal slice.

[0035] The formula for calculating the transition characteristic value in S35 is: , where γ n is the nth transition characteristic value, V n,k is the kth transition voltage value on the nth signal slice, V n,c is the voltage mean of the stable part of the nth signal slice, K is the number of transition voltage values, and n and k are positive integers.

[0036] In the present invention, transition voltage values ​​greater than the voltage mean are screened out to reflect the connection between the response part and the stable part. The larger the transition voltage value and the more the number of transition voltage values, the worse the performance of the temperature sensor during the transition, and the greater the overshoot phenomenon.

[0037] In this embodiment, S4 includes the following sub-steps: S41, arranging the response eigenvalue, stable eigenvalue and transition eigenvalue of the same signal slice in sequence to construct a eigenvector; S42, calculating the performance coefficient according to each characteristic vector corresponding to the low-speed voltage value signal slice set to obtain a low-speed performance coefficient; S43, calculating the performance coefficient according to each characteristic vector corresponding to the medium-speed voltage value signal slice set to obtain the medium-speed performance coefficient; S44. Calculate the performance coefficient according to each characteristic vector corresponding to the high-speed voltage value signal slice set to obtain a high-speed performance coefficient.

[0038] In this embodiment, the formula for calculating the performance coefficient in S42, S43 and S44 is: , where μ is the performance coefficient, | | is the absolute value, and r n,j is the jth element in the nth eigenvector, M is the number of eigenvectors, and n and j are positive integers.

[0039] The present invention calculates the difference between an element in each eigenvector and the mean value of the element, and reflects the change of each eigenvalue in each environment of a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, and judges the fluctuation of performance as the temperature rises. When the performance of the temperature sensor is stable, each eigenvalue will remain stable in each heating stage.

[0040] In this embodiment, S5 includes the following steps: S51, taking the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient to obtain a performance average; S52, taking the average of each response characteristic value corresponding to the low-speed voltage value signal slice set to obtain a low-speed response mean; S53, taking the average of each response characteristic value corresponding to the medium-speed voltage value signal slice set to obtain a medium-speed response mean; S54, taking an average of each response characteristic value corresponding to the high-speed voltage value signal slice set to obtain a high-speed response average; S55. Calculate the enhancement value according to the low-speed response mean, the medium-speed response mean, and the high-speed response mean: , where z is the enhancement value, ε low is the low speed response mean, ε mid is the mean value of medium-speed response, εhigh is the high-speed response mean; S56. Enhance the performance mean value to obtain the electrical performance evaluation value: , where h is the electrical performance evaluation value, μ c is the mean performance value.

[0041] In the present invention, the enhancement value is calculated according to the low-speed response mean, the medium-speed response mean and the high-speed response mean. When the heating speed of the temperature sensor is enhanced as the ambient temperature changes, the higher the electrical performance evaluation value is.

[0042] Embodiment 2, a surface temperature sensor chip electrical performance test system, comprising: a collection unit, a segmentation unit, a feature extraction unit, a performance coefficient calculation unit and an evaluation unit; The acquisition unit is used to place the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal; The segmentation unit is used to segment the low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal according to the time point of the heating stage, and construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set and a high-speed voltage value signal slice set; The feature extraction unit is used to extract response characteristic values, stable characteristic values ​​and transition characteristic values ​​from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set respectively; The performance coefficient calculation unit is used to calculate the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value and the transition characteristic value; The evaluation unit is used to calculate the enhancement value according to the response characteristic value, enhance the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient, and obtain the electrical performance evaluation value.

[0043] The specific implementation process of Example 2 is the same as that of Example 1.

[0044] The present invention can comprehensively and accurately capture the electrical performance characteristics of the sensor at different temperature change rates by testing the sensor chip in low-speed, medium-speed and high-speed temperature change environments. The accuracy and reliability of the electrical performance test are significantly improved by carefully slicing and extracting characteristic values ​​of the voltage value signal.

[0045] The present invention analyzes the response eigenvalue, stable eigenvalue and transition eigenvalue in multiple dimensions, so that the performance evaluation is no longer limited to a single static indicator, but can fully reflect the changes in the electrical characteristics of the sensor in a dynamic temperature change environment.

[0046] The present invention further improves the accuracy of electrical performance testing by calculating the enhancement value and enhancing the performance coefficient mean value.

[0047] The above are only preferred embodiments of the present invention and are not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A method for testing the electrical performance of a surface temperature sensor chip, characterized in that: The following steps are involved: S1, placing the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal; S2. According to the time point of the heating stage, the low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal are respectively segmented to construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set and a high-speed voltage value signal slice set; S3, extracting response eigenvalues, stable eigenvalues ​​and transition eigenvalues ​​from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set respectively; S4. Calculate the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value and the transition characteristic value; S5. Calculate the enhancement value according to the response characteristic value, enhance the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient, and obtain the electrical performance evaluation value.

2. The electrical performance testing method of a surface temperature sensor chip according to claim 1, characterized in that: The specific example of the low-speed temperature change environment in S1 is: set the starting temperature T0, increase the temperature by 5°C in the first R1 time of each subsequent heating stage, and maintain the heated temperature for the last R2 time of each heating stage until the target temperature is reached, where R1 is the heating time in each heating stage, and R2 is the temperature maintenance time in each heating stage; The medium-speed temperature change environment is as follows: set the starting temperature T0, increase the temperature by 10°C in the first R1 time of each subsequent heating stage, and maintain the increased temperature in the last R2 time of each heating stage until the target temperature is reached; The high-speed temperature change environment is as follows: set the starting temperature T0, increase the temperature by 15°C in the first R1 time of each subsequent heating stage, and maintain the heated temperature in the last R2 time of each heating stage until the target temperature is reached.

3. The electrical performance testing method of a surface temperature sensor chip according to claim 2, characterized in that: The S2 comprises the following sub-steps: S21, marking the time point of each heating stage in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed time point sequence, a medium-speed time point sequence, and a high-speed time point sequence; S22, dividing the low-speed voltage value signal at each time point in the low-speed time point sequence to obtain a plurality of signal slices, arranging the plurality of signal slices in chronological order, and constructing a set of low-speed voltage value signal slices; S23, dividing the medium-speed voltage value signal at each time point in the medium-speed time point sequence to obtain multiple signal slices, arranging the multiple signal slices in chronological order, and constructing a medium-speed voltage value signal slice set; S24, dividing the high-speed voltage value signal at each time point in the high-speed time point sequence to obtain a plurality of signal slices, arranging the plurality of signal slices in chronological order, and constructing a high-speed voltage value signal slice set.

4. The electrical performance testing method of a surface temperature sensor chip according to claim 1, characterized in that: The S3 comprises the following sub-steps: S31, dividing the signal slices into two parts in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set, respectively, to obtain a response part and a stable part; S32, calculating the response characteristic value for the response part, and calculating the stable characteristic value for the stable part; S33, taking the connection position of the response part and the stable part in a signal slice as the center; S34, taking L voltage values ​​in the left and right neighborhoods of the center, where L is a positive integer; S35. When the voltage value obtained in S34 is greater than the voltage average value of the stable part, the corresponding voltage value is a transition voltage value, and a transition characteristic value is calculated.

5. The method for testing the electrical performance of a surface temperature sensor chip according to claim 4, characterized in that: The S31 comprises the following sub-steps: S311, extracting signal slices from a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set, and a high-speed voltage value signal slice set; S312, calculating a voltage change value of each voltage value in the signal slice; S313, segmenting the signal slice according to the position of the maximum voltage change value to obtain a response part and a stable part.

6. The method for testing the electrical performance of a surface temperature sensor chip according to claim 4, characterized in that: The formula for calculating the response characteristic value in S32 is: , where ε n is the nth response eigenvalue, V n,i is the ith voltage value in the response portion of the nth signal slice, V n,i-1 is the i-1th voltage value in the response part of the nth signal slice, n and i are positive integers, △τ is the interval time, and N is the number of voltage values ​​in the response part; The formula for calculating the transition characteristic value in S35 is: , where γ n is the nth transition characteristic value, V n,k is the kth transition voltage value on the nth signal slice, V n,c is the voltage mean of the stable part of the nth signal slice, K is the number of transition voltage values, and n and k are positive integers.

7. The method for testing electrical properties of a surface temperature sensor chip according to claim 1, characterized in that: The S4 comprises the following sub-steps: S41, arranging the response eigenvalue, stable eigenvalue and transition eigenvalue of the same signal slice in sequence to construct a eigenvector; S42, calculating the performance coefficient according to each characteristic vector corresponding to the low-speed voltage value signal slice set to obtain a low-speed performance coefficient; S43, calculating the performance coefficient according to each characteristic vector corresponding to the medium-speed voltage value signal slice set to obtain the medium-speed performance coefficient; S44. Calculate the performance coefficient according to each characteristic vector corresponding to the high-speed voltage value signal slice set to obtain a high-speed performance coefficient.

8. The method for testing the electrical performance of a surface temperature sensor chip according to claim 7, characterized in that: The formula for calculating the performance coefficient in S42, S43 and S44 is: , where μ is the performance coefficient, | | is the absolute value, and r n,j is the jth element in the nth eigenvector, M is the number of eigenvectors, and n and j are positive integers.

9. The method for testing the electrical performance of a surface temperature sensor chip according to claim 1, characterized in that: The S5 comprises the following steps: S51, taking the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient to obtain a performance average; S52, taking the average of each response characteristic value corresponding to the low-speed voltage value signal slice set to obtain a low-speed response mean; S53, taking the average of each response characteristic value corresponding to the medium-speed voltage value signal slice set to obtain a medium-speed response mean; S54, taking an average of each response characteristic value corresponding to the high-speed voltage value signal slice set to obtain a high-speed response average; S55. Calculate the enhancement value according to the low-speed response mean, the medium-speed response mean, and the high-speed response mean: , where z is the enhancement value, ε low is the mean value of the slow response, ε mid is the mean value of medium-speed response, ε high is the high-speed response mean; S56. Enhance the performance mean value to obtain the electrical performance evaluation value: , where h is the electrical performance evaluation value, μ c is the mean performance value.

10. The surface temperature sensor chip electrical performance test system according to claim 1 is implemented based on the surface temperature sensor chip electrical performance test method according to any one of claims 1 to 9, characterized in that: include: Acquisition unit, segmentation unit, feature extraction unit, performance coefficient calculation unit and evaluation unit; The acquisition unit is used to place the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal; The segmentation unit is used to segment the low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal according to the time point of the heating stage, and construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set and a high-speed voltage value signal slice set; The feature extraction unit is used to extract response feature values, stable feature values ​​and transition feature values ​​from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set respectively; The performance coefficient calculation unit is used to calculate the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value and the transition characteristic value; The evaluation unit is used to calculate the enhancement value according to the response characteristic value, enhance the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient, and obtain the electrical performance evaluation value.

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