Photoelectric detector and preparation method and application thereof

Abstract

The invention relates to the technical field of detectors, in particular to a photoelectric detector and a preparation method and application thereof. The photoelectric detector provided by the invention comprises a silicon-based substrate, a silicon dioxide dielectric layer, an indium selenide thin layer and an indium metal nanoparticle layer which are sequentially stacked, the source electrode is located on the upper left portion of the indium metal nanoparticle layer, and the drain electrode is located on the upper right portion of the indium metal nanoparticle layer. According to the indium selenide photoelectric detector, indium which is low in cost and high in stability is adopted as metal nanoparticles and is evaporated on the surface of the indium selenide thin layer, and under irradiation of 650nm visible light, the local surface plasma resonance phenomenon generated by the indium nanoparticles remarkably enhances the photoelectric characteristic of the indium selenide photoelectric detector.

Description

Technical Field

[0001] The present invention relates to the field of detector technology, and in particular to a photoelectric detector and a preparation method and application thereof. Background Art

[0002] Two-dimensional semiconductor materials show great potential in high-performance photodetectors due to their high surface-to-volume ratio, strong photoelectric interaction and wide spectral response. Researchers have found that under specific lighting conditions, metal nanoparticles will produce local surface plasmon resonance, thereby generating an enhanced electric field on the surface of the particles. Taking advantage of this phenomenon, the researchers deposited metal nanoparticles on the surface of the two-dimensional semiconductor material of the photodetector and found that the photoelectric performance of the device was significantly improved. Currently, commonly used metals include gold, silver and aluminum, but these metals have problems such as high cost and unstable performance. Summary of the invention

[0003] In order to solve the problems existing in the prior art, the present invention provides a photodetector and a preparation method and application thereof. The photodetector provided by the present invention uses indium with low cost and strong stability as metal nanoparticles, which are evaporated on the surface of an indium selenide thin layer. Under irradiation of 650nm visible light, the local surface plasma resonance phenomenon generated by the indium nanoparticles significantly enhances the photoelectric properties of the indium selenide photodetector.

[0004] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0005] The present invention provides a photoelectric detector, comprising a silicon-based substrate, a silicon dioxide dielectric layer, an indium selenide thin layer and an indium metal nanoparticle layer which are stacked in sequence;

[0006] The invention also includes a source electrode located at the upper left of the indium metal nanoparticle layer and a drain electrode located at the upper right of the indium metal nanoparticle layer.

[0007] Preferably, the silicon-based substrate is a P-type silicon-based substrate.

[0008] Preferably, the thickness of the silicon dioxide dielectric layer is 200-300 nm.

[0009] Preferably, the thickness of the indium selenide thin layer is 8-15 nm.

[0010] Preferably, the average thickness of the indium metal nanoparticle layer is 5 nm.

[0011] Preferably, the source electrode and the drain electrode are made of gold.

[0012] The present invention also provides a method for preparing the above-mentioned photoelectric detector, comprising the following steps:

[0013] (1) Selecting a clean and dry silicon-based substrate with a silicon dioxide dielectric layer on the surface;

[0014] (2) placing an indium selenide crystal block on a tape, folding the tape in half, pressing and then tearing it apart, so that an indium selenide sheet adheres to the tape, then repeatedly tearing the tape in half on a fresh tape, thinning the indium selenide sheet, and attaching it to the PDMS film attached to the glass slide;

[0015] (3) transferring the indium selenide sheet on the PDMS film to the silicon dioxide dielectric layer to obtain an indium selenide thin layer attached to the silicon dioxide dielectric layer;

[0016] (4) using a vacuum thermal evaporation method to evaporate indium metal nanoparticles on the surface of the indium selenide thin layer to obtain an indium metal nanoparticle layer attached to the indium selenide thin layer;

[0017] (5) fixing the metal mask on the indium metal nanoparticle layer to obtain a metal mask fixed on the indium metal nanoparticle layer;

[0018] (6) A source electrode and a drain electrode are respectively deposited on the upper left and upper right of the metal mask, and then the metal mask is removed to obtain the photodetector.

[0019] Preferably, the metal mask is a stainless steel mask with a copper mesh attached.

[0020] The present invention also provides the use of the photoelectric detector described in the above technical solution or the photoelectric detector prepared by the above preparation method in remote sensing, imaging or optical communication.

[0021] The present invention provides a photodetector, comprising a silicon-based substrate, a silicon dioxide dielectric layer, an indium selenide thin layer and an indium metal nanoparticle layer stacked in sequence; and further comprising a source electrode located at the upper left of the indium metal nanoparticle layer and a drain electrode located at the upper right of the indium metal nanoparticle layer. The present invention uses indium with low cost and strong stability as metal nanoparticles, which are evaporated on the surface of the indium selenide thin layer. Under the irradiation of 650nm visible light, the local surface plasma resonance phenomenon generated by the indium nanoparticles significantly enhances the photoelectric characteristics of the indium selenide photodetector. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 A schematic diagram of a photodetector provided by the present invention;

[0023] Figure 2 The finite element simulation experimental results of the photoelectric detector provided by the present invention;

[0024] Figure 3 A COMSOL finite element simulation analysis diagram for the physical mechanism of the photoelectric characteristic enhancement of the photoelectric detector provided by the present invention;

[0025] Figure 4 The transfer characteristic curve of the device provided by the present invention at 405nm and 650nm wavelengths and in dark conditions. DETAILED DESCRIPTION

[0026] like Figure 1 As shown, the photoelectric detector provided by the present invention comprises a silicon-based substrate, a silicon dioxide dielectric layer, an indium selenide thin layer and an indium metal nanoparticle layer which are stacked in sequence;

[0027] The invention also includes a source electrode located at the upper left of the indium metal nanoparticle layer and a drain electrode located at the upper right of the indium metal nanoparticle layer.

[0028] As an implementation manner, the silicon-based substrate is a P-type silicon-based substrate.

[0029] As an implementation manner, the thickness of the silicon dioxide dielectric layer is 200-300 nm. In a specific embodiment, the thickness of the silicon dioxide dielectric layer may be 300 nm.

[0030] As an implementation manner, the thickness of the indium selenide thin layer is 8-15 nm. In a specific embodiment, the thickness of the indium selenide thin layer may be 10 nm.

[0031] As an embodiment, the average thickness of the indium metal nanoparticle layer is 5 nm.

[0032] As an implementation mode, the source electrode and the drain electrode are made of gold. As an implementation mode, the thickness of the source electrode and the drain electrode is 50 nm.

[0033] The present invention also provides a method for preparing the photoelectric detector described in the above technical solution, comprising the following steps:

[0034] (1) Selecting a clean and dry silicon-based substrate with a silicon dioxide dielectric layer on the surface;

[0035] (2) placing an indium selenide crystal block on a tape, folding the tape in half, pressing and then tearing it apart, so that an indium selenide sheet adheres to the tape, then repeatedly tearing the tape in half on a fresh tape, thinning the indium selenide sheet, and attaching it to the PDMS film attached to the glass slide;

[0036] (3) transferring the indium selenide sheet on the PDMS film to the silicon dioxide dielectric layer to obtain an indium selenide thin layer attached to the silicon dioxide dielectric layer;

[0037] (4) using a vacuum thermal evaporation method to evaporate indium metal nanoparticles on the surface of the indium selenide thin layer to obtain an indium metal nanoparticle layer attached to the indium selenide thin layer;

[0038] (5) fixing the metal mask on the indium metal nanoparticle layer to obtain a metal mask fixed on the indium metal nanoparticle layer;

[0039] (6) A source electrode and a drain electrode are respectively deposited on the upper left and upper right of the metal mask, and then the metal mask is removed to obtain the photodetector.

[0040] The present invention selects a clean and dry silicon-based substrate with a silicon dioxide dielectric layer on the surface, places an indium selenide crystal block on a tape, folds the tape in half, presses and then tears it open, so that an indium selenide sheet adheres to the tape, and then repeatedly tears the tape in half on a fresh tape to thin the indium selenide sheet before attaching it to a PDMS film attached to a glass slide.

[0041] As an embodiment, obtaining the clean and dry silicon-based substrate with a silicon dioxide dielectric layer on the surface includes the following steps:

[0042] A silicon-based substrate with a silicon dioxide dielectric layer on its surface was selected and placed in acetone, isopropanol, and deionized water in sequence for ultrasonic cleaning for 5 minutes, and then blown dry with nitrogen.

[0043] As an implementation manner, the number of repeated tearing is 5 times.

[0044] The invention transfers the indium selenide slice on the PDMS film to the silicon dioxide dielectric layer to obtain the indium selenide thin layer attached to the silicon dioxide dielectric layer.

[0045] As an embodiment, the transfer is to transfer the indium selenide sheet on the PDMS film to the silicon dioxide dielectric layer using a two-dimensional transfer system and a matching microscope.

[0046] The invention adopts a vacuum thermal evaporation method to evaporate indium metal nanoparticles on the surface of an indium selenide thin layer to obtain an indium metal nanoparticle layer attached to the indium selenide thin layer.

[0047] As an embodiment, the conditions for evaporating indium metal nanoparticles include: using a vacuum evaporator at a temperature of 100 to 300° C. and a pressure of 10 -4 ~10 -5 Pa.

[0048] The present invention fixes a metal mask on an indium metal nanoparticle layer to obtain a metal mask fixed on the indium metal nanoparticle layer, evaporates a source electrode and a drain electrode on the upper left and upper right of the metal mask respectively, and then removes the metal mask to obtain the photodetector.

[0049] As an implementation manner, the metal mask is a stainless steel mask with a copper mesh attached.

[0050] As an embodiment, the conditions for evaporating the source electrode and the drain electrode include: using a vacuum evaporator at a temperature of 1000 to 1200° C. and a pressure of 10 -4 ~10 -5 Pa.

[0051] The present invention also provides the use of the photoelectric detector described in the above technical solution or the photoelectric detector prepared by the above preparation method in remote sensing, imaging or optical communication.

[0052] The technical solutions provided by the present invention are described in detail below in conjunction with the embodiments, but they should not be construed as limiting the protection scope of the present invention.

[0053] Example 1

[0054] (1) A silicon substrate with a silicon dioxide dielectric layer (300 nm thick) on its surface was selected and placed in acetone, isopropanol, and deionized water in turn, and cleaned in an ultrasonic cleaner for 5 min, and then dried with a nitrogen gun.

[0055] (2) Place an indium selenide crystal block on an English blue tape, fold the tape in half, press, and then tear it apart; a layer of indium selenide flakes will naturally adhere to the torn English tape, tear the tape in half on the fresh tape repeatedly 5 times, and after thinning the indium selenide flakes, attach them to a mechanical peeling PDMS film attached to a glass slide and then gently lift them off, observe the PDMS film with an optical microscope, judge the thickness of the indium selenide film by color, and select a blue translucent material with a thickness of 10 nm, a uniform surface, and a length of 50 μm for later use;

[0056] (3) using a two-dimensional transfer system and a matching microscope to transfer the indium selenide thin layer (thickness of 10 nm) on the prepared PDMS film to the surface of the silicon dioxide dielectric layer;

[0057] (4) Using vacuum thermal evaporation method, a vacuum evaporator was used to evaporate the indium selenide thin layer on the surface (temperature 200°C, pressure 10 -4 Pa) a 5 nm thick indium layer to obtain the target indium metal nanoparticle layer;

[0058] (5) Using a two-dimensional material transfer system, a stainless steel mask with a copper mesh is fixed on the indium selenide thin layer;

[0059] (6) Using conventional vacuum thermal evaporation method, gold was evaporated on the stainless steel mask (temperature 1100°C, pressure 10 -4 Pa), and then remove the stainless steel mask with copper mesh to obtain gold with a thickness of 50nm, which is used as source and drain electrodes to obtain the photodetector.

[0060] test:

[0061] The present invention has carried out finite element simulation experiment on the prepared photoelectric detector, and the experimental results are shown in Figure 2 ,from Figure 2 It can be seen that the absorption rates of the photoelectric detector provided by the present invention under 650nm and 405nm visible light are 77.80% and 58.23% respectively.

[0062] In order to further study the physical mechanism of the enhanced optoelectronic properties of the device provided, COMSOL finite element simulation analysis was used, and the results are as follows Figure 3 As shown, from Figure 3 It can be seen that under 650nm visible light irradiation, the electric field generated on the surface of indium nanoparticles is as high as 1010V / m, and under 450nm visible light irradiation, there is almost no electric field generated on the surface of indium nanoparticles. This significant difference in light absorption rate and surface electric field can be attributed to the coupling effect between the incident photons and the specific local surface plasma resonance frequency. It can be inferred that the enhancement of the photoelectric characteristics of the device is due to the local surface plasma resonance effect generated by indium nanoparticles under 650nm visible light, which enhances the separation of electron-hole pairs on the surface of indium selenide, thereby generating more photogenerated carriers, thereby improving the photoelectric characteristics of the device.

[0063] Figure 4 The transfer characteristic curves of the device provided by the present invention at 405nm, 650nm wavelengths and dark conditions show that the device exhibits the maximum conductivity at 650nm wavelength and achieves the best photoelectric characteristics. This result further confirms the correctness of the above physical mechanism.

[0064] Although the above embodiment describes the present invention in detail, it is only a part of the embodiments of the present invention, not all of the embodiments. Other embodiments can be obtained based on this embodiment without creativity, and these embodiments all fall within the protection scope of the present invention.

Claims

1. A photoelectric detector, characterized in that: It comprises a silicon-based substrate, a silicon dioxide dielectric layer, an indium selenide thin layer and an indium metal nanoparticle layer which are stacked in sequence; The invention also includes a source electrode located at the upper left of the indium metal nanoparticle layer and a drain electrode located at the upper right of the indium metal nanoparticle layer.

2. The photodetector according to claim 1, wherein: The silicon-based substrate is a P-type silicon-based substrate.

3. The photodetector according to claim 1, wherein: The thickness of the silicon dioxide dielectric layer is 200-300 nm.

4. The photodetector according to claim 1, wherein: The thickness of the indium selenide thin layer is 8-15 nm.

5. The photodetector according to claim 1, wherein: The average thickness of the indium metal nanoparticle layer is 5 nm.

6. The photodetector according to claim 1, wherein: The source electrode and the drain electrode are made of gold.

7. The method for preparing a photoelectric detector according to any one of claims 1 to 6, characterized in that: The following steps are involved: (1) Selecting a clean and dry silicon-based substrate with a silicon dioxide dielectric layer on the surface; (2) placing an indium selenide crystal block on a tape, folding the tape in half, pressing and then tearing it apart, so that an indium selenide sheet adheres to the tape, then repeatedly tearing the tape in half on a fresh tape, thinning the indium selenide sheet, and attaching it to the PDMS film attached to the glass slide; (3) transferring the indium selenide sheet on the PDMS film to the silicon dioxide dielectric layer to obtain an indium selenide thin layer attached to the silicon dioxide dielectric layer; (4) using a vacuum thermal evaporation method to evaporate indium metal nanoparticles on the surface of the indium selenide thin layer to obtain an indium metal nanoparticle layer attached to the indium selenide thin layer; (5) fixing the metal mask on the indium metal nanoparticle layer to obtain a metal mask fixed on the indium metal nanoparticle layer; (6) A source electrode and a drain electrode are respectively deposited on the upper left and upper right of the metal mask, and then the metal mask is removed to obtain the photodetector.

8. The preparation method according to claim 1, characterized in that: The metal mask is a stainless steel mask with a copper mesh attached.

9. Use of the photoelectric detector according to any one of claims 1 to 6 or the photoelectric detector prepared by the preparation method according to claim 7 or 8 in remote sensing, imaging or optical communication.

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