Composite component device and method of manufacturing the same

Abstract

A composite component device is provided with two or more composite component layers each having an electronic component layer and a rewiring layer provided on the electronic component layer, the two or more composite component layers being laminated in the thickness direction such that the electronic component layer and the rewiring layer are alternately arranged, the electronic component layer having one or more electronic components, the electronic component includes an electronic component body portion having a first surface perpendicular to the thickness direction and a second surface facing the first surface, and a plurality of component electrodes disposed on the first surface, the component electrodes of one or more electronic components being electrically connected to the rewiring layer. The electronic component layer among the composite component layers adjacent to the rewiring layer of the two or more composite component layers further has an electronic component layer through-hole electrically connected to the rewiring layer of the other composite component layer.

Description

Technical Field

[0001] The present invention relates to a composite component device and a method for manufacturing the same. Background Art

[0002] Conventionally, as a package combining a plurality of electronic components, there is a package disclosed in Japanese Patent Application Laid-Open No. 2019-125779 (Patent Document 1). Figure 4F The device (400F) is provided with a rewiring layer (306), a first mold layer (316) arranged on the rewiring layer (306), and a second mold layer (326) arranged on the first mold layer (316). The bare chips (318, 320) sealed in the second mold layer (326) are connected to the bridge bare chip (310) sealed in the first mold layer (316) via an electrical connection portion (312), and are connected to the rewiring layer (306) via an electrical connection portion (314).

[0003] Patent Document 1: Japanese Patent Application Publication No. 2019-125779

[0004] However, the inventors have found that the above-mentioned device has the following problems. That is, the bare chip, the bridge bare chip and the wiring layer are connected via balls (bumps). Therefore, the connection resistance is relatively high, and the reliability may be reduced due to the breakage of the bumps. In addition, the bumps used during manufacturing may form spaces in the device, thereby hindering the thinning. Summary of the invention

[0005] Therefore, an object of the present invention is to provide a composite component device that can improve reliability and achieve thickness reduction.

[0006] The inventors of the present invention have conducted in-depth research to solve the above-mentioned problems and have obtained the following insights: a composite component device having two or more composite component layers, the composite component layer having an electronic component layer and a rewiring layer provided on the electronic component layer, wherein the electrical connection between the one or more electronic components and the rewiring layer and the electrical connection between the two or more composite component layers are connected without using solder bumps. Based on such technical insights, the present invention was conceived to electrically connect the component electrodes to the rewiring layer and to electrically connect the composite component layers to the electronic component layer through through holes. That is, the present invention includes the following embodiments.

[0007] In order to solve the above-mentioned problems, a composite component device of a technical solution of the present invention comprises two or more composite component layers, wherein the composite component layer has an electronic component layer and a rewiring layer arranged on the electronic component layer, wherein the above-mentioned two or more composite component layers are stacked in the thickness direction so that the above-mentioned electronic component layer and the above-mentioned rewiring layer are arranged alternately, the above-mentioned electronic component layer has one or more electronic components, and the electronic component has an electronic component main body and a plurality of component electrodes, the electronic component main body has a first surface perpendicular to the above-mentioned thickness direction and a second surface opposite to the first surface, the plurality of component electrodes are arranged on the first surface, the above-mentioned component electrodes of the above-mentioned one or more electronic components are electrically connected to the above-mentioned rewiring layer, and the electronic component layer in the composite component layer adjacent to the rewiring layer of other composite component layers among the above-mentioned two or more composite component layers also has an electronic component layer through-hole electrically connected to the rewiring layer of the other composite component layer.

[0008] According to the above-mentioned embodiment, the component electrode is electrically connected to the rewiring layer, and the composite component layer is electrically connected to the electronic component layer through the through hole. As a result, in the composite component device, compared with the case of electrical connection using bumps (e.g., solder bumps), the wiring length (particularly, the length of the through-hole wiring in the thickness direction of the composite component device) can be shortened, so the connection resistance can be reduced and the reliability can be improved. As a result, in addition, in the composite component device, compared with the case of electrical connection using bumps, the space caused by the bumps between the composite component layers can be eliminated, and the thickness can be reduced.

[0009] According to the composite component device of one embodiment of the present invention, it is possible to improve reliability and achieve thickness reduction. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a cross-sectional view showing the composite component according to the first embodiment.

[0011] Figure 2 yes Figure 1 Enlarged view of part A.

[0012] Figure 3 yes Figure 1 Enlarged view of part B.

[0013] Figure 4A These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0014] Figure 4B These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0015] Figure 4C These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0016] Figure 4D These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0017] Figure 4E These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0018] Figure 4F These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0019] Figure 4G These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0020] Figure 4H These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0021] Fig. 4I These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0022] Figure 4J These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0023] Figure 4K These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0024] Figure 4L These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0025] Figure 4M These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0026] Figure 4N These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0027] Fig.4O These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0028] Figure 4P These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0029] Figure 4Q These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0030] Figure 4RThese are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0031] Figure 4S These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0032] Figure 4T These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0033] Figure 4U These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0034] Figure 4V These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0035] Figure 5 It is a cross-sectional view showing a composite component according to a second embodiment.

[0036] Fig. 6A This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0037] Figure 6B This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0038] Figure 6C This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0039] Fig.6D This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0040] Fig. 6E This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0041] Fig. 6F This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0042] Figure 6G This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0043] Figure 6H This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0044] Fig.6I This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0045] Figure 6J This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0046] Figure 6K This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0047] Figure 6L This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0048] Figure 6M This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0049] Figure 6N This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0050] Fig.6O This is an explanatory diagram for explaining a method for manufacturing a composite component device according to the second embodiment.

[0051] Figure 7 It is a cross-sectional view showing a composite component according to a third embodiment.

[0052] Figure 8 yes Figure 7 Enlarged view of part D.

[0053] Fig.9A These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0054] Fig. 9B These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0055] Fig. 9C These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0056] Fig.9D These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0057] Fig.9E These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0058] Fig.9F These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0059] Figure 9G These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0060] Figure 9H These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0061] Fig.9I These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0062] Figure 9J These are explanatory diagrams for explaining a method for manufacturing a composite component device according to a third embodiment.

[0063] Fig. 10A These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment.

[0064] Fig. 10B These are explanatory diagrams for explaining the method for manufacturing the composite component device according to the first embodiment. DETAILED DESCRIPTION

[0065] Hereinafter, a composite component device and a method for manufacturing the same according to a technical solution of the present invention will be described in detail through the illustrated embodiments. It should be noted that the drawings contain partially schematic contents and sometimes do not reflect actual dimensions and ratios. In addition, the dimensions (more specifically, thickness, etc.) of the structural elements in the composite component device are measured based on SEM images taken by a scanning electron microscope (SEM). The above dimensions are obtained based on the average value of multiple measurements (the number of measurements n ≥ 3).

[0066] The various numerical ranges mentioned in this specification mean that the numerical values ​​(i.e., the upper limit value and the lower limit value) themselves are also included unless they are marked with special terms such as "less than", "larger than", and "smaller than". That is, for example, taking a numerical range of 80 to 120 μm as an example, the numerical range of 80 to 120 μm is interpreted as including the lower limit value "80 μm" and also including the upper limit value "120 μm".

[0067] <First embodiment: composite component device>

[0068] The composite component device of the first embodiment includes two or more composite component layers. In this embodiment, a composite component device including three composite component layers is described as an example.

[0069] The composite component device of the first embodiment includes two or more composite component layers, each of which includes an electronic component layer and a redistribution layer provided on the electronic component layer.

[0070] Two or more composite component layers are stacked in the thickness direction so that electronic component layers and rewiring layers are alternately arranged.

[0071] The electronic component layer has one or more electronic components, the electronic components having an electronic component main body and a plurality of component electrodes, the electronic component main body having a first surface perpendicular to the thickness direction and a second surface opposite to the first surface, the plurality of component electrodes being arranged on the first surface,

[0072] The component electrodes of one or more electronic components are electrically connected to the rewiring layer.

[0073] The electronic component layer in the composite component layer adjacent to the rewiring layer of the other composite component layer among the two or more composite component layers further includes an electronic component layer through-via electrically connected to the rewiring layer of the other composite component layer.

[0074] [Mechanism of action]

[0075] The composite component device of the first embodiment can improve reliability and achieve thickness reduction. Although not limited to a specific theory, the reason is presumed to be as follows.

[0076] In the composite component device of the first embodiment, the component electrode is electrically connected to the rewiring layer, and the composite component layer and the electronic component layer are electrically connected through the through hole. Therefore, in the composite component device, compared with the case of electrical connection using bumps (for example, solder bumps), the wiring length (especially, the length of the through-hole wiring in the thickness direction of the composite component device) can be shortened, so the connection resistance can be reduced and the reliability can be improved. Therefore, in addition, in the composite component device, compared with the case of electrical connection using bumps, the space caused by the bumps between the composite component layers can be eliminated, and the thickness can be reduced.

[0077] [Structure of composite component device]

[0078] Reference Figure 1 , Figure 2 as well as Figure 3 The structure of the composite component device according to the first embodiment will be described. Figure 1 It is a diagram schematically showing a cross section of a composite component device according to the first embodiment of the present invention. Figure 2 yes Figure 1 Enlarged view of part A. Figure 3 yes Figure 1 Enlarged view of part B.

[0079] like Figure 1 As shown, the composite component device 1 includes three composite component layers 100, 200, and 300. Figure 1 In FIG. 1 , the direction parallel to the thickness of the composite component device 1 is defined as the Z direction, the positive Z direction is defined as the upper side, and the reverse Z direction is defined as the lower side. Figure 1 In the cross section of the composite component device 1 shown, the direction perpendicular to the Z direction is defined as the X direction. Figure 1The direction perpendicular to the cross section of the composite component device 1 shown is defined as the Y direction.

[0080] [Composite component layer]

[0081] The composite component layers 100, 200, 300 include electronic component layers 110, 210, 310, and rewiring layers 120, 220, 320 provided on the electronic component layers 110, 210, 310, respectively. The three composite component layers 100, 200, 300 are stacked in the thickness direction so that the electronic component layers 110, 210, 310 and the rewiring layers 120, 220, 320 are alternately arranged. When a composite component layer is connected to a rewiring layer of another composite component layer, the composite component layer further includes an interlayer adhesive layer. Specifically, the composite component layers 100, 200 further include interlayer adhesive layers 130, 230.

[0082] The structures of the second and third composite component layers 200 and 300 are substantially the same as the structure of the first composite component layer 100, and therefore, the first composite component layer 100 will be described below as an example. However, the second and third composite component layers 200 and 300 may be referred to as the parts different from the first composite component layer 100. The third composite component layer 300 is different from the first and second composite component layers 100 and 200 in that it does not have an interlayer adhesive layer and a composite component layer through-hole.

[0083] (Electronic component layer)

[0084] The first electronic component layer 110 is bonded (joined) to the first rewiring layer 120 on its lower surface, and is bonded to the second rewiring layer 220 of the second composite component layer 200 on its upper surface via the first interlayer adhesive layer (first composite component adhesive layer) 130. Here, the first rewiring layer 120 and the second rewiring layer 220 are, for example, sheets or substrates of multi-layer wiring layers as described later, and have, for example, wiring (conductive wiring) 120b and a dielectric film 120a containing an inorganic material (inorganic insulating material). The first electronic component layer 110 has one or more first electronic components 111 and a first electronic component layer through-via 116, and further has a first Si base layer 112, a first sidewall portion 113, a first resin sealing portion 114, a first electronic component adhesive layer 115, and a first Si through-via 117.

[0085] - Electronic components -

[0086] One or more first electronic components 111 are arranged in the first composite component layer 100. The one or more first electronic components 111 include: a first electronic component main body 111c having a first surface 111a perpendicular to the thickness direction and a second surface 111b opposite to the first surface 111a (the first surface 111a and the second surface 111b opposite to each other); a plurality of first component electrodes 111d arranged on the first surface 111a; and a first insulating portion 111e arranged between the plurality of first component electrodes 111d. The first electronic component 111 is supported by the first Si base layer 112 via the first electronic component adhesive layer 115. The first electronic component 111 is sealed in the first composite component layer 100 by the first resin sealing portion 114. The first component electrode 111d of the first electronic component 111 is electrically connected to the first rewiring layer 120 via the first Si through-via 117. When there are a plurality of the one or more first electronic components 111, the first electronic components 111 may be of the same type or different types. The thickness of the first electronic component 111 is, for example, 80 to 120 μm.

[0087] One or more first electronic components 111 (specifically, two first electronic components 111) are all arranged in the first composite component layer 100 so that the first surface 111a thereof is located on the first rewiring layer 120 side relative to the second surface 111b. Moreover, with respect to the second and third composite component layers 200 and 300, in the same arrangement direction as the one or more first electronic components 111, all the one or more second and third electronic components 211 and 311 are arranged in the second and third composite component layers 200 and 300 so that the first surfaces 211a and 311a thereof are located on the second and third rewiring layers 220 and 320 side relative to the second surfaces 211b and 311b. These one or more electronic components 111, 211, 311 are connected to the rewiring layers 120, 220, 320, respectively. In this way, since the wiring of the composite component device 1 is simple, not only two composite component layers can be stacked, but also three or more composite component layers can be stacked.

[0088] The one or more first electronic components 111 are, for example, electronic components in which one or more elements are integrated in the same material as the material constituting the first Si base layer 112. The first electronic components 111 are, for example, active components (more specifically, CPU, GPU, and LSI, etc.) and passive components (more specifically, capacitors, resistors, and inductors, etc.).

[0089] The first electronic component main body 111c is made of, for example, ceramic or a semiconductor material (more specifically, silicon or the like).

[0090] The conductive material of the first component electrode 111d is, for example, Cu, Ni, Sn, Al, and alloys thereof. The conductive material is preferably the same material as the first Si through-hole 117 among these materials. The thickness of the first component electrode 111d is, for example, 1 μm to 30 μm, preferably 5 μm or less. The first component electrode 111d can be thinned to a thickness of 1 to 5 μm. The thickness of the first component electrode 111d can be, for example, 1 / 4 to 1 / 6 times the thickness of the first electronic component main body 111c.

[0091] The first insulating portion 111e functions as a layer that electrically insulates the first component electrodes 111d. The thickness of the first insulating portion 111e is, for example, 1 to 30 μm, preferably less than 5 μm. The first component electrode 111d can be thinned to a thickness of 1 to 5 μm. The thickness of the first insulating portion 111e can be, for example, 1 / 4 to 1 / 6 times the thickness of the first electronic component main body 111c. The thickness of the first insulating portion 111e may also be the same as that of the first component electrode 111d, in which case the lower surface of the first insulating portion 111e is coplanar with the lower surface of the first component electrode 111d.

[0092] - Si base layer -

[0093] The first Si base layer 112 has a first main surface 112a and a second main surface 112b facing each other. The first Si base layer 112 supports one or more first electronic components 111 via the first electronic component adhesive layer 115 on the second main surface 112b, and is connected to the first redistribution layer 120 on the first main surface 112a. The first Si base layer 112 is substantially composed of Si. Here, in this specification, substantially composed of Si means that the target component contains Si at a ratio of 99 mass % or more.

[0094] The thickness of the first Si base layer 112 is, for example, 150 μm or less, preferably 50 μm or less, and more preferably 30 μm or less. The reason why the thickness of the first Si base layer 112 can be extremely thinned is that, in the manufacturing method of the composite component device 1 described later, the first Si support member 140 is bonded to the first Si base layer 112 to enhance the strength. Therefore, even if the first Si base layer 112 is polished and thinned, it is not easy to cause damage (cracks, etc.) of the first Si base layer 112 due to insufficient strength (see Figure 4E4F). By reinforcing the strength of the first Si support member 140, the composite component device 1 can be manufactured. The thickness of the first Si base layer 112 can be extremely thinned compared to the past, so the length of the through-hole wiring (i.e., the first Si through-via 117) electrically connecting the first component electrode 111d of one or more electronic components 111 to the first rewiring layer 120 can be shortened. As a result, the parasitic impedance based on the through-hole wiring can be reduced, and the electrical characteristics of the electronic device using the composite component device 1 can be improved.

[0095] - Side wall -

[0096] exist Figure 1 On the basis of Figure 3 As shown, the first side wall portion 113 is arranged on the second main surface 112b of the first Si base layer 112 to surround one or more first electronic components 111. The first side wall portion 113 is arranged at both ends of the first composite component layer 100 to surround the entirety of the one or more electronic components 111. The first electronic component layer through-hole 116 penetrates the interior of the first side wall portion 113. The first side wall portion 113 has a substantially rectangular shape when viewed in cross section, and is connected to the second redistribution layer 220 of the second composite component layer 200 via the first interlayer adhesive layer 130 on its upper surface, and is bonded to the first Si base layer 112 via the first electronic component adhesive layer 115 on its lower surface. The thickness of the first side wall portion 113 is, for example, 90 to 130 μm. The first side wall portion 113 is, for example, substantially composed of Si.

[0097] - Resin seal part -

[0098] The first resin sealing portion 114 seals one or more first electronic components 111 .

[0099] The resin sealing portion 114 includes a resin (e.g., an epoxy resin), and the resin can be used to integrate a plurality of (more than two) first electronic components 111. The plurality of first electronic components 111 can be integrated with the resin, so even if the two or more first electronic components 111 have different sizes and shapes, the two or more first electronic components 111 can be arranged in the first electronic component layer 110. Thus, a design with a high degree of freedom can be performed, and the two or more first electronic components 111 can be combined according to the purpose. For example, the composite component device 1 can have different types of first electronic components 111 built in.

[0100] - Adhesive layer for electronic components -

[0101] The first electronic component bonding layer 115 bonds one or more first electronic components 111 to the second main surface 112b of the first Si base layer 112. In this specification, the thickness of the first electronic component bonding layer 115 refers to the thickness in the Z direction from the lower surface of the first component electrode 111d to the second main surface 112b of the first Si base layer 112. The thickness of the first electronic component bonding layer 115 is, for example, 4 to 6 μm.

[0102] - Electronic component layer through-hole -

[0103] The electronic component layer in the composite component layer adjacent to the rewiring layer of the other composite component layer among the two or more composite component layers also has an electronic component layer through-via electrically connected to the rewiring layer of the other composite component layer. That is, when the composite component layer is bonded to the rewiring layer of the other composite component layer, it also has an electronic component layer through-via electrically connected to the rewiring layer of the other composite component layer.

[0104] For example, the first electronic component layer 110 in the first composite component layer 100 adjacent to the second rewiring layer 220 of the second composite component layer 200 further includes the first electronic component layer through via 116 electrically connected to the second rewiring layer 220 of the second composite component layer 200. That is, since the first composite component layer 100 is connected to the second rewiring layer 220 of the other second composite component layer 200, the first electronic component layer 110 further includes the first electronic component layer through via 116 electrically connected to the second rewiring layer 220 of the second composite component layer 200. Since the second composite component layer 200 is connected to the third rewiring layer 320 of the third composite component layer 300, the second electronic component layer 210 further includes the second electronic component layer through via 216 electrically connected to the third rewiring layer 320 of the third composite component layer 300. On the other hand, since the third composite component layer 300 is not connected to the rewiring layer of the other composite component layer, the third composite component layer 300 does not include the electronic component layer through via.

[0105] The first electronic component layer through via 116 penetrates the first electronic component layer 110 in the Z direction (more specifically, penetrates the first side wall portion 113, the first electronic component adhesive layer 115, and the first Si base layer 112 in the Z direction), and further penetrates the first interlayer adhesive layer 130. The first electronic component layer through via 116 includes an adhesive layer conductive via 116a penetrating the first interlayer adhesive layer 130, a side wall portion through via 116b penetrating the first side wall portion 113, a conductive via 116c penetrating the first electronic component adhesive layer 115, and a Si through via 116d penetrating the first Si base layer 112. The adhesive layer conductive via 116a electrically connects the first electronic component layer through via 116 to the second redistribution layer 220 of the second composite component layer 200. In a plane perpendicular to the thickness direction of the composite component device 1, the cross-sectional area of ​​the adhesive layer conductive via 116a (cross-sectional area in the XY plane) is larger than the cross-sectional area of ​​the side wall portion through-via 116b. Therefore, the electrical connection between the first electronic component layer through-via 116 and the second redistribution layer 220 is improved, and the connection resistance between the first and second composite component layers 100 and 200 is reduced, thereby further improving reliability.

[0106] The first electronic component layer through-hole 116 is preferably substantially composed of copper. Here, in this specification, substantially composed of copper (Cu) means that the target component contains copper at a ratio of 99 mass % or more. If the first electronic component layer through-hole 116 is substantially composed of copper, since copper is a good conductive material, the resistance of the wiring is reduced.

[0107] - Si through via -

[0108] exist Figure 1 On the basis of Figure 2 As shown, the first Si through via 117 penetrates the first Si base layer 112 (and the first electronic component adhesive layer 115 ) to electrically connect the first component electrode 111 d and the first rewiring layer 120 .

[0109] The first Si through-via 117 includes a Si through-via main body 117a and an extension 117b. The Si through-via main body 117a is electrically connected to the first rewiring layer 120 and penetrates the first Si base layer 112. The extension 117b is electrically connected to the Si through-via main body 117a, extends from the second main surface 112b of the first Si base layer 112, penetrates the first electronic component adhesive layer 115, and is electrically connected to the first component electrode 111d. In this way, the through-hole wiring electrically connected from the first component electrode 111d to the first rewiring layer 120 is composed only of the first Si through-via 117, and therefore does not have (does not require) a bump (for example, a solder bump). Therefore, the composite component device 1 of the present embodiment can further reduce the parasitic impedance based on the through-hole wiring. In addition, the electronic characteristics of the electronic device using the composite component device 1 are improved thereby. Furthermore, the wiring length can be shortened compared to the past, so the thickness of the composite component device 1 can be reduced, and the composite component device 1 can be made smaller, lighter, and thinner. The length of the through-hole wiring (i.e., the length of the first Si through-via 117 in the stacking direction) is, for example, 3 μm to 36 μm. For reference, for example, a solder bump generally has a diameter of 100 to 150 μm.

[0110] exist Figure 2 In the embodiment, the first Si through via 117 is substantially linear in the stacking direction. The cross-sectional shape of the first Si through via 117 in the ZX plane is Figure 2 The cross-sectional shape of the first Si through via 117 in the XY plane is, for example, a substantially circular shape, a substantially polygonal shape, or a substantially polygonal shape with rounded corners.

[0111] (Rewiring Layer)

[0112] The first rewiring layer 120 is formed on the first main surface 112a of the first Si base layer 112. The first rewiring layer 120 is a multi-layer wiring layer. The first rewiring layer 120 has wiring (conductive wiring) 120b and a dielectric film 120a substantially made of an inorganic material (inorganic insulating material).

[0113] The wiring 120b has a conductive via. The conductive via electrically connects the wirings between different layers in the first rewiring layer 120. The wiring 120b includes a conductive material. Examples of the conductive material include Cu, Ag, and Au, and alloys thereof, and Cu is preferred among these materials. The first rewiring layer 120 can have a plurality of layers, for example, more than two layers of wiring 120b and more than one layer of dielectric film 120a. The thickness of one layer of the wiring 120b and one layer of the dielectric film 120a constituting the first rewiring layer 120 is, for example, 1.5 μm to 5.0 μm. In this case, the thickness of the first rewiring layer 120 is a value obtained by multiplying the thickness of these one layers (1.5 μm to 5.0 μm) by the total number of layers in the first rewiring layer 120 (unit: μm).

[0114] The dielectric film 120a is substantially composed of an inorganic material (inorganic insulating material) as an insulating material. Here, in this specification, being substantially composed of an inorganic material means that the target component contains an inorganic material at a ratio of 99% by mass or more. As inorganic insulating materials, for example, silicon oxide (SiO2) and silicon nitride (SiN, Si3N4) are listed. If the dielectric film 120a is composed of an inorganic insulating material, for example, the wiring width can be made about 1 / 10 compared to the dielectric film in the composite component device 1A of the second embodiment. Thereby, further miniaturization and thinning of the composite component device 1 can be achieved. The line and space (L / S) of the first rewiring layer 120 including the dielectric film 120a substantially composed of an inorganic material is, for example, 1μm / 1μm.

[0115] The thickness of the dielectric film 120a is, for example, 0.1 to 2 μm. The dielectric film 120a may also be a multi-component film containing two or more components. The multi-component film may also be a multilayer film in which a plurality of layers are formed according to each component. The layer structure of the multilayer film is, for example, SiO2 (thickness 0.25 μm) / Si3N4 (thickness 0.1 μm) / SiO2 (thickness 0.25 μm) / Si3N4 (thickness 0.1 μm) from the first Si base layer 112 side.

[0116] (Interlayer bonding layer)

[0117] The first interlayer adhesive layer 130 bonds the first electronic component layer 110 and the second redistribution layer 220 of the second composite component layer 200 .

[0118] [Method for manufacturing composite component device]

[0119] An example of a method for manufacturing the composite component device 1 according to the first embodiment will be described.

[0120] The method for manufacturing the composite component device 1 according to the first embodiment includes, for example:

[0121] an electronic component bonding step of bonding one or more electronic components to the Si base layer so that a plurality of component electrodes of the one or more electronic components are in contact with a bottom portion of the Si base layer having a grid-shaped sidewall portion via the electronic component bonding layer;

[0122] an electronic component sealing step of sealing one or more electronic components with a resin to form a resin sealing portion;

[0123] a rewiring layer forming step of forming a rewiring layer to form a composite component layer; and

[0124] a lamination step of forming another composite component layer through an electronic component bonding step, an electronic component sealing step, and a rewiring layer forming step, forming an electronic component layer through-hole in a side wall portion of the other composite component layer, and laminating the other composite component on the composite component layer,

[0125] The lamination process is performed at least once.

[0126] The method for manufacturing the composite component device 1 of the first embodiment further includes:

[0127] Si base layer thinning process, making the Si base layer thinner;

[0128] a through hole forming step of forming a through hole in the thinned Si base layer and the electronic component adhesive layer to expose a portion of the surface of the component electrode; and

[0129] The Si through via forming step forms a Si through via in the through hole.

[0130] The method for manufacturing the composite component device 1 of the first embodiment may further include:

[0131] Si base layer preparation step, preparing a Si base layer;

[0132] an insulating portion forming step of forming an insulating portion between component electrodes;

[0133] A resin sealing portion thinning process to make the resin sealing portion thinner;

[0134] Si support laminating step, laminating the Si support on the electronic component layer;

[0135] a dielectric film forming step of forming a dielectric film having a predetermined pattern on the Si base layer; and

[0136] The dicing process is to separate the pieces into individual pieces by dicing.

[0137] Specifically, refer to Figure 10A to Figure 10B as well as Figure 4A to Figure 4V , an example of a method for manufacturing the composite component device 1 will be described. Figure 10A to Figure 10B as well as Figure 4A to Figure 4V This is a diagram for explaining a method for manufacturing the composite component device 1. The method for manufacturing the composite component device 1 of the first embodiment includes: an insulating portion forming step, a Si base layer preparing step, an electronic component bonding step, an electronic component sealing step, a resin sealing portion thinning step, a Si support member laminating step, a Si base layer thinning step, a dielectric film forming step, a through hole forming step, a Si through via forming step, a rewiring layer forming step, a laminating step, and a dicing step.

[0138] In this manufacturing method, a mother assembly is produced by integrating the composite component devices 1 from the electronic component bonding step to the lamination step. In this manufacturing method, the third composite component layer 300, the second composite component layer 200, and the first composite component layer 100 are produced in this order.

[0139] (Insulating portion forming step)

[0140] In the insulating portion forming step, the first insulating portion 111e is formed between the first component electrodes 111d of the first electronic component 111. Specifically, in the resin layer forming step, a coating film including a resin is formed and planarized to form the first insulating portion 111e. Fig. 10A As shown, a solution containing a resin and a solvent is applied by spin coating to form a coating film. Here, the lowest part of the coating film is made higher than the highest part of the first component electrode 111d. That is, the coating film is formed so that all of the plurality of first component electrodes 111d are completely buried in the coating film. The coating layer is dried to form the first insulating portion 111e. The first insulating portion 111e before the subsequent flattening treatment preferably completely covers the first component electrode 111d.

[0141] In the flattening process, Fig. 10B As shown, for example, a surface planer and a grinder are used to grind and flatten the surfaces of the first component electrodes 111d and the first insulating portion 111e, and the first insulating portion 111e is formed between the first component electrodes 111d. As a result, the top surface of the first component electrode 111d is exposed, and the top surfaces of the first component electrode 111d and the first insulating portion 111e are coplanar.

[0142] (Si base layer preparation process)

[0143] In the Si base layer preparation step, a third Si base layer 312 is prepared. Specifically, Figure 4AAs shown, in the Si base layer preparation process, a Si wafer is prepared as the third Si base layer 312, a third electronic component adhesive layer 315 (strictly speaking, a coating film of an adhesive) is formed on the third Si base layer 312, and a third side wall portion 313 is arranged. Thus, the third Si base layer 312 is formed, and the third Si base layer 312 has a rectangular bottom portion in a plan view and side walls arranged in a grid shape to surround the rectangular bottom portion. In the electronic component bonding process described later, one or more third electronic components 311 are bonded to the recessed portion (or depression, or cavity) surrounded by these bottom portions and side walls.

[0144] A coating film of the adhesive is formed on the second main surface 312b of the third Si base layer 312. Thus, a third Si base layer 312 formed with a coating film is produced. The coating method is, for example, spin coating. It is preferred that the thickness of the coating film be controlled and applied to a range of a thickness of the third component electrode 311d of one or more third electronic components 311 to 10 μm. The adhesive is, for example, a thermosetting resin. Such a thermosetting resin is, for example, a thermosetting resin containing repeating units from benzocyclobutene (BCB), such as that which can be obtained by polymerizing 1,3-divinyl-1,1,3,3-tetramethyldisiloxane-bis-benzocyclobutene (DVS-bis-BCB). As a commercial product, for example, there is "CYCLOTENE" manufactured by Dow Chemical.

[0145] The shape of the Si wafer can be a flat cylindrical shape when viewed from above, but is not limited to this. In this specification, flat means that the height (h) of the cylindrical shape is smaller than the outer diameter (diameter: 2r) (h / 2r<1). In the case where the shape of the Si wafer is a cylindrical shape, the thickness of the Si wafer is, for example, 775μm (diameter of the Si wafer φ300mm), 725μm (φ200mm), 675μm (φ150mm), and 525μm (φ100mm). In addition, the Si base layer preparation process can also be implemented before the insulating portion forming process. The third Si base layer 312 and the third sidewall portion 313 are both substantially composed of Si.

[0146] (Electronic component bonding process)

[0147] In the electronic component bonding step, one or more third electronic components 311 are bonded to the third Si base layer 312 so that a plurality of third component electrodes 311d of the one or more third electronic components 311 are in contact with the bottom portion of the third Si base layer 312 having the lattice-shaped third sidewall portion 313 via the third electronic component bonding layer 315. Specifically, in the electronic component bonding step, as Figure 4BAs shown, one or more third electronic components 311 are arranged (mounted) on (the bottom portion of) the third Si base layer 312 so that the third component electrode 311d and the third insulating portion 311e are in contact with (the bottom portion of) the third Si base layer 312 via the third electronic component adhesive layer 315 (strictly speaking, the coating film of the adhesive). Next, the coating film of the adhesive is cured to form the third electronic component adhesive layer 315. Thus, one or more third electronic components 311 are bonded to the third Si base layer 312.

[0148] The third electronic component 311 is arranged on the coating film using an apparatus equipped with a vacuum chamber. In detail, an electronic component integrated wafer (a wafer obtained by integrating more than one third electronic component 311) is bonded to the third Si base layer 312 (a third Si base layer 312 having a third sidewall portion 313). Pressure is applied in two directions along the stacking direction of the third electronic component 311, and heating is performed. Specifically, the third Si base layer 312 is set on the lower workbench in the vacuum chamber of the apparatus. The third electronic component 311 is vacuum-sucked (or decompressed) to the upper workbench in the vacuum chamber so that the third component electrode 311d of the third electronic component 311 is in a direction opposite to the coating film. In the alignment of the third Si base layer 312 and the electronic component integrated wafer, for example, an identification mark of the third Si base layer 312 is used. One or more third electronic components 311 are arranged on the coating film side of the third Si base layer 312. Pressure is applied in two directions along the direction in which the upper and lower worktables face each other, and heating is performed.

[0149] The third component electrode 311 d and the third insulating portion 311 e are placed opposite to the third Si base layer 312 via the third electronic component adhesive layer 315 , and the electronic component integrated wafer is bonded to the third Si base layer 312 .

[0150] (Electronic component sealing process)

[0151] In the electronic component sealing step, one or more third electronic components 311 are sealed with resin to form a third resin sealing portion 314. In the electronic component sealing step, specifically, Figure 4C As shown, a liquid resin is applied to the third Si base layer 312 equipped with one or more third electronic components 311 using a dispenser. Then, the applied liquid resin is molded using a compression molding device. Then, for example, a hot air circulation oven is used to cure the liquid resin. The heat treatment conditions during curing are, for example, 150° C. and 1 hour. Thus, a third resin sealing portion 314 is formed.

[0152] (Resin Sealing Portion Thinning Step)

[0153] In the resin sealing portion thinning step, the third resin sealing portion 314 is thinned. In the resin sealing portion thinning step, specifically, Figure 4D As shown, the third resin sealing portion 314 is ground and thinned using a back grinder for a Si wafer. In the electronic component thinning step, the surface of the third resin sealing portion 314 on the second surface 311b side of the third electronic component 311 is ground. It is preferred that the grinding amount is as large as possible. The thickness of the third resin sealing portion 314 after thinning is, for example, 50 to 150 μm.

[0154] In the example of the resin sealing portion thinning process, Figure 4D In the present invention, the third resin sealing portion 314 of the third electronic component layer 310 is polished, but more than one third electronic component 311 may be further polished. However, the functional parts inside the third electronic component 311 are not damaged. The functional parts are, for example, dielectrics and electrodes in the case of capacitors, and wiring in the case of inductors.

[0155] (Si support bonding process)

[0156] In the Si support bonding process, Figure 4E As shown, the third Si support 340 is bonded to the third resin sealing portion 314. Specifically, as the third Si support 340, the Si wafer described in the Si base layer preparation process is separately prepared. Next, an adhesive layer 350 (strictly speaking, a coating film of an adhesive) is formed on the third Si support 340 by the method described in the electronic component bonding process. Then, the polished surface of the third resin sealing portion 314 is brought into contact with the coating film, and the third resin sealing portion 314 is bonded to the third Si support 340, and pressure is applied and heated. As a result, the coating film of the adhesive is cured to form the adhesive layer 350, and the third Si support 340 is arranged on the polished surface of the third resin sealing portion 314 via the adhesive layer 350. The purpose of providing the third Si support 340 is to prevent the disadvantages (more specifically, a reduction in strength, etc.) caused by the layer being thinner than before in the subsequent Si base layer thinning process.

[0157] The third Si support 340 can be thinned before lamination as needed from the viewpoint of improving processability. This is to form a dielectric film using a semiconductor device in a subsequent process. For example, when the thickness of the third electronic component 311 is 150 μm, the Si wafer (φ300 mm, generally 775 μm thick) serving as the third Si support 340 is thinned to about 625 μm.

[0158] (Si base layer thinning process)

[0159] The Si base layer thinning step thins the third Si base layer 312. Specifically, in the Si base layer thinning step, Figure 4F As shown, the third Si base layer 312 is ground using the same method as the resin sealing portion thinning process, so that the third Si base layer 312 is thinned and the ground surface is flattened. In the Si base layer thinning process, the third Si base layer 312 is thinned while being supported by the third Si support 340, so that the third Si base layer 312 can be effectively thinned. Therefore, in the manufacturing method of the composite component device 1 of the present embodiment, a composite component device 1 with excellent electronic component module and thinning and miniaturization can be manufactured. It is preferred that the grinding amount prevents the above-mentioned disadvantages, for example, as much as possible within a range that can maintain a certain strength. Considering the deviation in the flatness of the ground surface, the thickness of the thinned third Si base layer 312 is preferably 3μm or more.

[0160] (Dielectric film forming process)

[0161] In the dielectric film forming process, Figure 4G , Figure 4H as well as Fig. 4I As shown, a dielectric film 320 a having a prescribed pattern is formed on the third Si base layer 312 .

[0162] here, Figure 4G to Figure 4I is with Figure 4F Part C corresponds to an enlarged view of the portion. Figure 4J to Figure 4M Also, Figure 4G to Figure 4M The diagram is mainly related to the formation of the third Si through via 317 and the third re-wiring layer 320, so for convenience, it is desired to note that the third Si through via 317, the third re-wiring layer 320, and the locations where they are formed are enlarged to occupy a larger space.

[0163] Specifically, a vapor deposition (CVD) method such as plasma-enhanced chemical vapor deposition (PECVD) is used, such as Figure 4G As shown, a dielectric film (thickness 0.1-0.2 μm) 320a is formed on the entire surface of the third Si base layer 312. The dielectric film 320a may be formed in more than one layer. For example, when a four-layer dielectric film 320a is formed, it can be set in order from the third Si base layer 312 side to SiO2: 0.25 μm / Si3N4: 0.1 μm / SiO2: 0.25 μm / Si3N40.1 μm.

[0164] In addition, in the dielectric film forming step, the surface of the third Si base layer 312 can be cleaned before forming the dielectric film 320a. Cleaning is performed by, for example, wet cleaning or oxygen plasma ashing.

[0165] Then, if Figure 4H as well as Fig. 4I As shown, the dielectric film 320a is patterned using photolithography. A photoresist film 360 is formed on the entire surface of the dielectric film 320a by spin coating a liquid resist. The photoresist film 360 is exposed through a mask corresponding to a prescribed pattern. The exposed photoresist film 360 is developed. The dielectric film 320a of the photoresist film 360 is selectively removed using RIE (Reactive Ion Etching). For example, in the case of forming the above-mentioned four-layer dielectric film 320a, two layers on the surface side of the dielectric film 320a (the surface side opposite to the third Si base layer 312 side in the dielectric film 320a) are selectively removed. Then, the photoresist film 360 is peeled off. Thus, a dielectric film 320a having a prescribed pattern is formed on the third Si base layer 312. In addition, the dielectric film 320a is used as a substrate to be described later. Figure 4L An insulating film functions as an electrical insulator between the two third Si through vias 317 shown.

[0166] Furthermore, the first main surface 312a of the third Si base layer 312 may further include a marking layer. The marking layer can be detected by an infrared (IR) camera to perform alignment in photolithography.

[0167] (Through-hole forming step)

[0168] In the through hole forming step, through holes 312c and 315c are formed in the thinned third Si base layer 312 and the third electronic component adhesive layer 315, so that a portion of the surface of the third component electrode 311d is exposed. Specifically, in the through hole forming step, a photoresist film 360 is formed on the entire surface. The photoresist film 360 is exposed through a mask corresponding to the pattern of the third Si through hole 317. The exposed photoresist film 360 is developed to form a Figure 4J The photoresist film 360 of the prescribed pattern is shown. Figure 4KAs shown, the third Si base layer 312 and the third electronic component bonding layer 315 present in the Z direction are selectively removed (etched) from the opening 360a of the photoresist film 360. Etching is performed using, for example, RIE and laser irradiation. Thus, through holes 312c and 315c are formed, and (a portion of the upper surface of) the third component electrode 311d is exposed. Here, the through hole 315c of the third electronic component bonding layer 315 in the ZX cross section has a substantially elliptical shape. In this specification, the substantially elliptical shape includes not only a strict elliptical shape, but also a similar elliptical shape that takes into account realistic deviations such as etching conditions during manufacturing. This is because the material constituting the third electronic component bonding layer 315 is easier to etch than the material constituting the third Si base layer 312. Thus, a substantially elliptical extension 317b is formed in the subsequent Si through-hole forming process. After the through holes 312c and 315c are formed, the photoresist film 360 is removed. As an etching unit, RIE is preferably used. By using RIE as the etching means, the flatness of the upper surface of the exposed third component electrode 311d is improved, so that good bonding can be achieved with the third Si through via 317 to be formed later. Thus, a decrease in electrical connectivity can be further suppressed.

[0169] (Si through via forming step)

[0170] In the Si through-hole forming step, a Si through-hole is formed in the through-hole. Specifically, in the through-hole forming step, Figure 4L As shown, third Si through vias 317 are formed in through holes 312c and 315c by electroplating. Using dual damascene (more specifically, Cu dual damascene), third Si through vias 317 are formed in through holes 312c and 315c by electroplating (more specifically, electrolytic Cu plating). Thus, third electronic component layer 310 is formed.

[0171] (Rewiring Layer Formation Step)

[0172] In the rewiring layer forming step, the third rewiring layer 320 is formed to form the third composite component layer 300. Specifically, in the rewiring layer forming step, Figure 4M As shown in FIG. 1 , a dielectric film 320a and wiring 320b having a predetermined pattern are formed by the above-mentioned photolithography and etching, thereby forming a third redistribution layer 320. Figure 4M In the third redistribution layer 320, embedded in Figure 4H The dielectric film 320a formed in Figure 4L The wiring 320b formed in is depicted. Figure 4N Indicates that it contains Figure 4M 4 is a cross-sectional view of a third composite component layer 300 . Figure 4M yes Figure 4N Enlarged view of section C'.

[0173] (Lamination process)

[0174] In the lamination step, other composite component layers (first and second composite component layers 100 and 200) are formed through the above-mentioned insulating portion forming step to the rewiring layer forming step, and electronic component layer through-vias 116 and 216 are formed in the other composite component layers, and the other composite component layers are laminated on the third composite component layer 300. In the present embodiment, the composite component layers are laminated twice.

[0175] Specifically, first, in the lamination step, the second composite member layer 200 is laminated on the third composite member layer 300. Figure 4A to Figure 4M The second composite component layer 200 is formed by performing the insulating portion forming step to the rewiring layer forming step shown in the figure. The second Si support member 240 is removed from the second composite component layer 200 to which the second Si support member 240 is attached. Fig.4O As shown, the second Si support member 240 is reattached to the second redistribution layer 220 of the second composite component layer 200. Figure 4P As shown, the second interlayer adhesive layer 230 is used to Fig.4O The second composite component layer 200 is shown attached to Figure 4N The third composite component layer 300 is shown. Figure 4Q As shown, the second Si support member 240 is removed. Figure 4R As shown, the second electronic component layer through via 216 is formed in the second composite component layer 200. The second electronic component layer through via 216 can be formed in the same manner as the above-mentioned Si through via step.

[0176] Next, the first composite component layer 100 is stacked. As with the second composite component layer 200, Figure 4A to Figure 4P As shown, the first composite component layer 100 is stacked on the second composite component layer 200 (see Figure 4S ).like Figure 4T As shown, the first Si support member 140 is removed. Figure 4U As shown, the first electronic component layer through via 116 is formed in the first composite component layer 100. The first electronic component layer through via 116 can be formed in the same manner as the above-mentioned Si through via step. Thus, the first composite component layer 100 is further stacked.

[0177] (Cutting process)

[0178] Cutting process such as Figure 4VThe mother assembly is cut into individual pieces as shown, and the third Si support member 340 is removed. In this way, the composite component device 1 is manufactured.

[0179] <Second embodiment>

[0180] [Structure of composite component device]

[0181] The composite component device of the second embodiment is different from the composite component device of the first embodiment in that it does not have the Si base layer 112, 212, 312, the side wall portion 113, 213, 313, and the Si through-via 117, 217, 317, and in that it has the metal layer 370, and the electronic component adhesive layer 115, 215, 315 and the electronic component layer through-via 116, 216, 316 are different. The following mainly describes these different structures. In addition, in the second embodiment, the same reference numerals as those in the first embodiment indicate the same structures as those in the first embodiment, and therefore, the description thereof is omitted in principle.

[0182] Reference Figure 5 6 , the structure of the composite component device according to the second embodiment will be described. Figure 5 1 is a diagram schematically showing a cross section of a composite component device according to a second embodiment of the present invention. As in the first embodiment, the second and third composite component layers 200 and 300 have substantially the same structure as the first composite component layer 100, and therefore, the first composite component layer 100 will be mainly described below. However, regarding matters different from the first composite component layer 100, the second and third composite component layers 200 and 300 may be referred to.

[0183] (Electronic component layer)

[0184] The first electronic component layer 110 includes the first electronic component 111 and the first electronic component layer through-hole 116A, and further includes the first resin sealing portion 114 and the first electronic component adhesive layer 115A.

[0185] - Electronic components -

[0186] The first electronic component 111 is supported by the first rewiring layer 120A. The first component electrode 111d of the first electronic component 111 is directly electrically connected to the first rewiring layer 120 (directly bonded).

[0187] - Adhesive layer for electronic components -

[0188] When the composite component layer is connected to the rewiring layer of other composite component layers, one or more electronic components arranged in the composite component layer are bonded to the rewiring layer of other composite component layers through the electronic component adhesive layer. More specifically, the first electronic component adhesive layer 115A bonds the second surface 111b of the first electronic component 111 to the second rewiring layer 220A of the second composite component layer 200. The second electronic component adhesive layer 215A bonds the second surface 211b of the second electronic component 211 to the third rewiring layer 320 of the third composite component layer 300. On the other hand, the third electronic component adhesive layer 315A bonds the second surface 311b of the third electronic component 311 to the metal layer 370.

[0189] - Electronic component layer through-hole -

[0190] The first electronic component layer through via 116A is a columnar wiring (more specifically, a Cu column). The cross-sectional area of ​​the first electronic component layer through via 116A in the XY plane is larger than that of the first electronic component layer through via 116 in the first embodiment. The cross-sectional diameter of the first electronic component layer through via 116A in the XY plane is, for example, 35 to 100 μm. The number of the first electronic component layer through vias 116A is 4 in total when observed in cross section, and 2 are arranged at each end of the first composite component layer 100.

[0191] The cross-sectional area of ​​the first electronic component layer through-via 116A in the plane perpendicular to the thickness direction of the composite component device 1A may increase from the second surface 111b toward the first surface 111a of the first electronic component 111. That is, the shape in the ZX cross section (ZX cross-sectional shape) of the first electronic component layer through-via 116A may be a tapered shape with respect to the stacking direction of the composite component layers 100, 200, 300. More specifically, the cross-sectional area (XY cross-sectional area) of the first electronic component layer through-via 116A in the XY plane may decrease from the second surface 111b toward the first surface 111a.

[0192] (Rewiring Layer)

[0193] The first rewiring layer 120A is directly bonded to the first component electrode 111d. If the first rewiring layer 120A is directly bonded to the first component electrode 111d, the length of the through-hole wiring between the first rewiring layer 120A and the first component electrode 111d can be further reduced, thereby further miniaturizing and thinning the composite component device, and reducing the resistance of the through-hole wiring.

[0194] The first rewiring layer 120A has a dielectric film substantially made of an organic material (organic insulating material) and wiring (conductive wiring). Here, in this specification, the dielectric film substantially made of an organic material means that the dielectric film contains an organic material at a ratio of 99 mass % or more.

[0195] The dielectric film is substantially composed of an organic insulating material as an insulating material. Examples of the organic insulating material include epoxy resin, silicone resin, polyester, polypropylene, polyimide, acrylonitrile-butadiene-styrene (ABS) resin, acrylonitrile-styrene (AS) resin, methacrylic resin, polyamide, fluororesin, liquid crystal polymer, polybutylene terephthalate, and polycarbonate. If the insulating material constituting the dielectric film is an organic insulating material, the dielectric film is formed without using a method such as PECVD, so that the cost can be reduced compared to the composite component device 1 of the first embodiment.

[0196] The line and space (L / S) of the first redistribution layer 120A including a dielectric film substantially made of an inorganic material is, for example, 10 μm / 10 μm. The thickness of the dielectric film is, for example, 1 to 20 μm.

[0197] (Metal layer)

[0198] The third composite component layer 300 includes a metal layer 370. The metal layer 370 functions as an electromagnetic shield for the composite component device 1A.

[0199] [Method for manufacturing composite component device]

[0200] An example of a method for manufacturing the composite component device 1A according to the second embodiment will be described.

[0201] The method for manufacturing the composite component device 1A according to the second embodiment includes, for example:

[0202] an electronic component bonding step of bonding one or more electronic components to the Si support member so that the second surface of the one or more electronic components is in contact with the Si support member (Si support member substrate) via the electronic component bonding layer;

[0203] an electronic component sealing step of sealing one or more electronic components with a resin to form a resin sealing portion; and

[0204] A resin sealing portion thinning step, in which the resin sealing portion is thinned to expose the entire surface of the component electrode;

[0205] a rewiring layer forming step of forming a rewiring layer to form a composite component layer; and

[0206] a lamination step of forming an electronic component layer through-hole on the composite component layer, bonding one or more electronic components to the composite component layer so that the second surface of the one or more electronic components contacts the composite component layer via the electronic component adhesive layer, sealing the one or more electronic components with a resin to form a resin sealing portion, thinning the resin sealing portion to expose the entire surface of the component electrode, forming a rewiring layer and laminating other composite component layers on the composite component layer,

[0207] The above lamination process is performed at least once.

[0208] The method for manufacturing the composite component device 1A according to the second embodiment may further include:

[0209] an insulating portion forming step of forming an insulating portion; and

[0210] The dicing process is to separate the pieces into individual pieces by dicing.

[0211] Specifically, refer to Fig. 6A 6O, an example of a method for manufacturing the composite component device 1A will be described. Fig. 6A 60 is a diagram for explaining the method for manufacturing the composite component device 1A. The method for manufacturing the composite component device 1A of the second embodiment includes, in chronological order, an insulating portion forming step, an electronic component bonding step, an electronic component sealing step, a resin sealing portion thinning step, a rewiring layer forming step, a laminating step, and a dicing step. Among these steps, the insulating portion forming step (see Fig. 10A as well as Fig. 10B )、Electronic component sealing process (refer to Figure 6B ), cutting process (refer to Fig.6O ) are substantially the same as the corresponding steps in the first embodiment and are therefore omitted.

[0212] (Electronic component bonding process)

[0213] In the electronic component bonding step, one or more third electronic components 311 are bonded to the third Si support 340 so that the second surface 311b of the one or more third electronic components 311 is in contact with the third Si support 340 via the third electronic component bonding layer 315A. Specifically, in the electronic component bonding step, Fig. 6AAs shown, a third electronic component adhesive layer 315A (strictly speaking, a coating film of an adhesive) is formed on the second surface 311b of the third electronic component 311 (a third insulating portion 311e is formed in the same manner as in the insulating portion forming step of the first embodiment), and one or more third electronic components 311 are arranged (mounted) on the third Si support 340 (strictly speaking, the third Si support 340 on which the metal layer 370 is arranged via the adhesive layer 350) via the coating film. Next, the third electronic component adhesive layer 315A is cured. Thus, one or more third electronic components 311 are bonded to the third Si support 340.

[0214] (Resin Sealing Portion Thinning Step)

[0215] In the resin sealing portion thinning step, the third resin sealing portion 314 is thinned to expose the entire surface of the third component electrode 311d. Specifically, in the resin sealing portion thinning step, Figure 6C As shown, the third resin sealing portion 314 is ground and thinned using a back grinder for a Si wafer. Thus, the entire surface of the third component electrode 311d is exposed. In this step, the component electrode 311d and a portion of the third insulating portion 311e may be ground.

[0216] (Rewiring Layer Formation Step)

[0217] In the rewiring layer forming step, the third rewiring layer 320A is formed to produce the third composite component layer 300. Specifically, in the rewiring layer forming step, Fig.6D As shown, a dielectric film and wiring having a predetermined pattern are formed using photolithography to form the third rewiring layer 320A. In the second embodiment, a relatively expensive device such as PVCVD is not used to form the dielectric film, so that the cost can be reduced.

[0218] (Lamination process)

[0219] In the lamination process, the second electronic component layer through-hole 216A is formed in the third composite component layer 300, one or more second electronic components 211 are bonded to the third composite component layer 300 so that the second surface 211b of one or more second electronic components 211 is in contact with the third composite component layer 300 via the second electronic component adhesive layer 215A, the one or more second electronic components 211 are sealed with resin to form the second resin sealing portion 214, the second resin sealing portion 214 is thinned to expose the entire surface of the second component electrode 311d, the second rewiring layer 220A is formed, and the other composite component layers (the first and second composite component layers 100, 200) are laminated on the third composite component layer 300. The lamination process is performed twice.

[0220] Specifically, in the lamination step, first, the second composite component layer 200 is laminated on the third composite component layer 300. Fig. 6E As shown, the second electronic component layer through-via 216A is formed on the third composite component layer 300. Specifically, a dry film resist (DFR) is laminated on (the entire surface of) the third redistribution layer 320A of the third composite component layer 300. By photolithography, the DFR is penetrated to provide an opening. By Cu through-hole plating, the second electronic component layer through-via 216A is formed in the opening. The DER is peeled off. Thus, the second electronic component layer through-via 216A is formed on the third composite component layer 300.

[0221] Similar to the electronic component bonding process, Fig. 6F As shown, one or more second electronic components 211 are bonded to the third composite component layer 300 so that the second surfaces 211 b of the one or more second electronic components 211 are in contact with the third composite component layer 300 via the second electronic component adhesive layer 215A.

[0222] Similar to the electronic component sealing process, Figure 6G As shown in FIG. 1 , one or more second electronic components 211 are sealed with resin to form a second resin sealing portion 214. As in the resin sealing portion thinning step, Figure 6H As shown in FIG. 1 , the second resin sealing portion 214 is thinned to expose the entire surface of the second component electrode 211d and the second insulating portion 211e. Fig.6I As shown, the second redistribution layer 220A is formed. Thus, the second composite component layer 200 is stacked on the third composite component layer 300 .

[0223] Next, the first composite component layer 100 is laminated on the second composite component layer 200. As in the above-mentioned lamination step, the second composite component layer 200 is formed. Figure 6J to Figure 6N As shown, a first composite component layer 100 is laminated to a second composite component layer 200 .

[0224] via Fig.6O The composite component device 1A of the second embodiment is manufactured through the dicing step shown.

[0225] <Third Embodiment>

[0226] [Structure of composite component device]

[0227] The composite component device of the third embodiment is different from the composite component device of the first embodiment in that it does not have the Si base layer 112, 212, 312, the electronic component adhesive layer 115, 215, 315, and the Si through vias 117, 217, 317, and in that the electronic component layer through vias 116, 216, 316 are different. The following mainly describes the different structures. In addition, in the third embodiment, the same reference numerals as those in the first and second embodiments are the same structures as those in the first and second embodiments, respectively, and therefore, the description thereof is omitted in principle.

[0228] Reference Figure 7 as well as Figure 8 The structure of the composite component device according to the third embodiment will be described. Figure 7 It is a diagram schematically showing a cross section of a composite component device according to a third embodiment of the present invention. Figure 8 yes Figure 7 2 is an enlarged view of the D portion of the embodiment. As in the first embodiment, the second and third composite component layers 200 and 300 have substantially the same structure as the first composite component layer 100, and therefore, the first composite component layer 100 will be mainly described below. However, regarding matters different from the first composite component layer 100, the second and third composite component layers 200 and 300 may be referred to. The first composite component layer 100 includes a first electronic component layer 110 and a rewiring layer 120A provided on the first electronic component layer 110.

[0229] (Electronic component layer)

[0230] The first electronic component layer 110 includes the first electronic component 111 and the first electronic component layer through-via 116B, and further includes the first side wall portion 113 and the first resin sealing portion 114 .

[0231] - Electronic component layer through-hole -

[0232] The first electronic component layer through via 116B penetrates the first side wall portion 113 of the first electronic component layer 110 in the Z direction, and further penetrates the first interlayer adhesive layer 130. The first electronic component layer through via 116B includes an adhesive layer conductive via 116a penetrating the first interlayer adhesive layer 130, and a side wall portion through via 116b penetrating the first side wall portion 113.

[0233] [Method for manufacturing composite component device]

[0234] An example of a method for manufacturing the composite component device 1B according to the third embodiment will be described.

[0235] The method for manufacturing the composite component device 1B according to the third embodiment includes, for example:

[0236] an electronic component bonding step of bonding one or more electronic components to the Si base layer so that a plurality of component electrodes of the one or more electronic components are in contact with a bottom portion of the Si base layer having a grid-shaped sidewall portion via the electronic component bonding layer;

[0237] an electronic component sealing step of sealing one or more electronic components with a resin to form a resin sealing portion;

[0238] a rewiring layer forming step of forming a rewiring layer to form a composite component layer; and

[0239] a lamination step of forming another composite component layer through an electronic component bonding step, an electronic component sealing step, and a rewiring layer forming step, forming an electronic component layer through-hole in a side wall portion of the other composite component layer, and laminating the other composite component layer on the composite component layer,

[0240] At least one lamination process is performed.

[0241] The method for manufacturing the composite component device 1B of the third embodiment further includes a Si base layer removal step of removing the Si base layer and the electronic component adhesive layer to expose the entire surface of the component electrode.

[0242] The method for manufacturing the composite component device 1B according to the third embodiment may further include:

[0243] Si base layer preparation step, preparing a Si base layer;

[0244] An insulating portion forming step of forming an insulating portion;

[0245] A resin sealing portion thinning process to make the resin sealing portion thinner;

[0246] A Si support member laminating step of laminating the Si support member to the electronic component layer; and

[0247] The dicing step is to separate the wafers into individual pieces by dicing.

[0248] Specifically, refer to Figures 9A to 9J , an example of a method for manufacturing the composite component device 1B will be described. Figures 9A to 9J This is a diagram for explaining a method for manufacturing a composite component device 1B. The method for manufacturing a composite component device 1B according to the third embodiment includes an insulating portion forming step, a Si base layer preparing step, an electronic component bonding step, an electronic component sealing step, a resin sealing portion thinning step, a Si support member laminating step, a Si base layer removing step, a rewiring layer forming step, a laminating step, and a dicing step.

[0249] (Insulating portion forming step to Si support member bonding step)

[0250] The insulating portion forming step to the Si support member bonding step are performed in the same manner as in the first embodiment (see: Figure 4A to Figure 4E ).

[0251] (Si base layer removal step)

[0252] In the Si base layer removal step, the third Si base layer 312 and the third electronic component adhesive layer 315 are removed to expose the entire surface of the third component electrode 111d. Specifically, in the Si base layer removal step, Fig.9A As shown, the third Si base layer 312 and the third electronic component adhesive layer 315 are removed in the same manner as the Si base layer thinning step in the first embodiment.

[0253] (Rewiring Layer Formation Step)

[0254] In the rewiring layer forming step, the third rewiring layer 320A is formed. Specifically, in the rewiring layer forming step, the same method as the rewiring layer forming step in the second embodiment is used, such as Fig. 9B As shown, a third redistribution layer 320A is formed. Thus, a third composite component layer 300 is formed.

[0255] (Lamination process)

[0256] like FIG. 9C to FIG. 9I As shown, the stacking process is the same as the stacking process of the first embodiment, and other composite component layers (first and second composite component layers 100 and 200) are formed through the above-mentioned insulating portion forming process to the rewiring layer forming process, and electronic component layer through holes 116B and 216B are formed in the other composite component layers to stack the other composite component layers on the third composite component layer 300.

[0257] (Cutting process)

[0258] As in the first embodiment, a cutting process is performed (see: Figure 9J ). Thus, the composite component device 1B is manufactured.

[0259] <Other embodiments>

[0260] The present invention is not limited to the above-described embodiment, and design changes can be made within the scope of the present invention. In addition, various combinations of the structures of the first to third embodiments are also possible.

[0261] In the first to third embodiments, the composite component devices 1, 1A, and 1B have three composite component layers, but are not limited to this. For example, the composite component device may also have two or more than four composite component layers. In this case, the stacking process is performed once or three times or more in the manufacturing method of the composite component device. The structures of the composite component layers of the composite component device of the present invention are roughly the same, so the wiring design is not easy to become complicated, and it is easy to electrically connect the composite component layers. Therefore, wiring can be easily formed even if more than three composite component layers are stacked. Therefore, it is not easy to impose restrictions on the number and type of built-in electronic components in circuit design, and the design freedom is high. A variety of circuit structures can be realized, and the range of applications is widened.

[0262] In the first to third embodiments, the composite component device has two electronic components of the same type in each composite component layer, but is not limited thereto. For example, the composite component device may have electronic components of different types, or may have one or more than three electronic components in each composite component layer. In addition, the composite component device may have different numbers of electronic components in each composite component layer. Therefore, it is not easy to impose restrictions on the number and type of built-in electronic components in circuit design, and the degree of freedom of design is high. A variety of circuit structures can be realized, and the range of applications is wider.

[0263] The composite component device and the method for manufacturing the same according to the present invention are as follows.

[0264] <1>

[0265] A composite component device comprises two or more composite component layers, wherein the composite component layer comprises an electronic component layer and a rewiring layer provided on the electronic component layer, wherein:

[0266] The two or more composite component layers are stacked in the thickness direction so that the electronic component layers and the rewiring layers are alternately arranged.

[0267] The electronic component layer has one or more electronic components, the electronic components having an electronic component main body and a plurality of component electrodes, the electronic component main body having a first surface perpendicular to the thickness direction and a second surface opposite to the first surface, the plurality of component electrodes being arranged on the first surface,

[0268] The component electrodes of the one or more electronic components are electrically connected to the rewiring layer.

[0269] The electronic component layer in the composite component layer adjacent to the rewiring layer of another composite component layer among the two or more composite component layers further includes an electronic component layer through-via electrically connected to the rewiring layer of the other composite component layer.

[0270] <2>

[0271] The composite component device according to <1>, wherein:

[0272] The electronic component layer through-via is substantially composed of copper.

[0273] <3>

[0274] The composite component device according to <1> or <2>, wherein:

[0275] The electronic component layer further includes a resin sealing portion that seals the one or more electronic components.

[0276] <4>

[0277] The composite component device according to any one of <1> to <3>, wherein:

[0278] All electronic components included in the composite component device are arranged in the two or more composite component layers such that the first surface is located on the redistribution layer side with respect to the second surface.

[0279] <5>

[0280] The composite component device according to any one of <1> to <4>, wherein:

[0281] The electronic component layer further includes a side wall portion, the side wall portion being arranged to surround the one or more electronic components, and the electronic component layer through-hole penetrates the side wall portion.

[0282] <6>

[0283] The composite component device according to any one of <1> to <5>, wherein:

[0284] The electronic component layer further comprises:

[0285] A Si base layer supporting the one or more electronic components; and

[0286] The Si through via penetrates the Si base layer to electrically connect the component electrode and the rewiring layer.

[0287] <7>

[0288] The composite component device according to any one of <1> to <6>, wherein:

[0289] The redistribution layer includes a dielectric film substantially made of an inorganic material.

[0290] <8>

[0291] The composite component device according to <5>, wherein:

[0292] The composite component layer is bonded to the other composite component layers via an adhesive layer.

[0293] The electronic component layer through-via has a side wall through-via penetrating the side wall and a conductive through-hole penetrating the adhesive layer.

[0294] The conductive vias electrically connect the electronic component layer through-holes to the rewiring layer of the other composite component layer.

[0295] In a plane perpendicular to the thickness direction, a cross-sectional area of ​​the conductive via is larger than a cross-sectional area of ​​the side wall portion through-via.

[0296] <9>

[0297] The composite component device according to any one of <1> to <4>, wherein:

[0298] The rewiring layer is directly bonded to the component electrode.

[0299] <10>

[0300] The composite component device according to any one of <1> to <5> and <9>, wherein:

[0301] The rewiring layer has a dielectric film substantially made of an organic material.

[0302] <11>

[0303] The composite component device according to <10>, wherein:

[0304] A cross-sectional area of ​​the electronic component layer through-via in a plane perpendicular to the thickness direction increases from the second surface toward the first surface.

[0305] <12>

[0306] A method for manufacturing a composite component device, comprising manufacturing the composite component device described in any one of <1> to <8>, wherein:

[0307] The electronic component layer of the composite component device further comprises:

[0308] a side wall portion configured to surround the one or more electronic components, the electronic component layer through-hole penetrating the side wall portion; and

[0309] The resin sealing part integrates the above-mentioned one or more electronic components.

[0310] The method for manufacturing the composite component device comprises:

[0311] an electronic component bonding step of bonding the one or more electronic components to the Si base layer so that a plurality of component electrodes of the one or more electronic components are in contact with a bottom portion of the Si base layer having a lattice-shaped sidewall portion via the electronic component bonding layer;

[0312] an electronic component sealing step of sealing the one or more electronic components with a resin to form a resin sealing portion;

[0313] a rewiring layer forming step of forming the rewiring layer to form a composite component layer; and

[0314] a lamination step of forming another composite component layer through the electronic component bonding step, the electronic component sealing step, and the rewiring layer forming step, forming an electronic component layer through-hole in the other composite component layer, and laminating the other composite component on the composite component layer;

[0315] The above lamination process is performed at least once.

[0316] <13>

[0317] The method for manufacturing a composite component device according to <12>, further comprising:

[0318] A Si base layer thinning step, thinning the Si base layer;

[0319] a through hole forming step of forming a through hole in the thinned Si base layer and the electronic component adhesive layer to expose a portion of the surface of the component electrode; and

[0320] Si through via forming step, forming a Si through via in the through hole,

[0321] The Si through-via penetrates the Si base layer and the electronic component adhesive layer to electrically connect the rewiring layer to the component electrode of the electronic component.

[0322] The dielectric film of the redistribution layer is substantially composed of an inorganic material.

[0323] <14>

[0324] The method for manufacturing a composite component device according to <12>, wherein:

[0325] The method further comprises a Si base layer removal step of removing the Si base layer and the electronic component adhesive layer to expose the entire surface of the component electrode.

[0326] The dielectric film of the redistribution layer is substantially composed of an organic material.

[0327] <15>

[0328] The method for manufacturing a composite component device according to any one of <1> to <5> and <9>, wherein:

[0329] The electronic component layer of the composite component device further comprises a resin sealing portion that integrates the one or more electronic components.

[0330] The rewiring layer further comprises a dielectric film which is directly bonded to the component electrode and is substantially made of an organic material.

[0331] The method for manufacturing the composite component device comprises:

[0332] An electronic component bonding step of bonding the one or more electronic components to the Si support member so that the second surface of the one or more electronic components is in contact with the Si support member via the electronic component bonding layer;

[0333] an electronic component sealing step of sealing the one or more electronic components with a resin to form a resin sealing portion;

[0334] a resin sealing portion thinning step of thinning the resin sealing portion to expose the entire surface of the component electrode;

[0335] a rewiring layer forming step of forming the rewiring layer to form a composite component layer; and

[0336] a lamination step of forming the electronic component layer through-holes on the composite component layer, bonding the one or more electronic components to the composite component layer so that the second surface of the one or more electronic components contacts the composite component layer via the electronic component bonding layer, sealing the one or more electronic components with a resin to form a resin sealing portion, thinning the resin sealing portion to expose the entire surface of the component electrode, forming a rewiring layer and laminating another composite component layer on the composite component layer,

[0337] The above lamination process is performed at least once.

[0338] Industrial Applicability

[0339] The composite component device of the present invention can be mounted on various electronic devices for use.

[0340] Description of Reference Numerals

[0341] 1, 1A, 1B...composite component device; 100, 200, 300...first, second, third composite component layer; 110, 210, 310...first, second, third electronic component layer; 111, 211, 311...first, second, third electronic component; 111a, 211a, 311a...first surface; 111b, 211b, 311b...second surface; 111c, 211c, 311c...first, second, third electronic component main body; 111d, 211d, 311d...first, second, third component electrode; 111e, 211e, 311e...first, second, third insulating portion; 112, 212, 312...first, second, third Si base layer; 112a, 312a...first main surface; 112b, 312b...second main surface; 113 , 213, 313... first, second, third side wall portions; 114, 214, 314... first, second, third resin sealing portions; 115, 115A, 215, 215A, 315, 315A... first, second, third electronic component adhesive layers; 116, 116A, 116B, 216, 216A, 216B... first, second electronic component layer through-holes; 117, 217, 318... first, second, third electronic component layer through-holes; 17...first, second and third Si through vias; 120, 120A, 220, 220A, 320, 320A...first, second and third redistribution layers; 320a...dielectric film; 320b...wiring; 130, 230...first and second interlayer bonding layers; 140, 240, 340...first, second and third Si supporting members; 150, 250, 350...bonding layer.

Claims

1. A composite component device comprising two or more composite component layers, wherein the composite component layer comprises an electronic component layer and a rewiring layer provided on the electronic component layer, wherein: The two or more composite component layers are stacked in the thickness direction so that the electronic component layers and the rewiring layers are alternately arranged. The electronic component layer has one or more electronic components, the electronic components having an electronic component main body and a plurality of component electrodes, the electronic component main body having a first surface perpendicular to the thickness direction and a second surface opposite to the first surface, the plurality of component electrodes being arranged on the first surface, The component electrodes of the one or more electronic components are electrically connected to the rewiring layer, The electronic component layer in the composite component layer adjacent to the rewiring layer of the other composite component layer among the two or more composite component layers further includes an electronic component layer through-via, and the electronic component layer through-via is electrically connected to the rewiring layer of the other composite component layer.

2. The composite component device according to claim 1, wherein: The electronic component layer through via is substantially composed of copper.

3. The composite component device according to claim 1 or 2, wherein: The electronic component layer further includes a resin sealing portion that seals the one or more electronic components.

4. The composite component device according to any one of claims 1 to 3, wherein: All electronic components included in the composite component device are arranged in the two or more composite component layers such that their first surfaces are located on the redistribution layer side with respect to their second surfaces.

5. The composite component device according to any one of claims 1 to 4, wherein: The electronic component layer further includes a side wall portion that is configured to surround the one or more electronic components, and the electronic component layer through-hole penetrates the side wall portion.

6. The composite component device according to any one of claims 1 to 5, wherein: The electronic component layer further comprises: A Si base layer supporting the one or more electronic components; and The Si through via penetrates the Si base layer to electrically connect the component electrode and the rewiring layer.

7. The composite component device according to any one of claims 1 to 6, wherein: The rewiring layer has a dielectric film substantially composed of an inorganic material.

8. The composite component device according to claim 5, wherein: The composite component layer is bonded to the other composite component layer via an adhesive layer. The electronic component layer through-via has a side wall through-via penetrating the side wall and a conductive through-hole penetrating the adhesive layer. The conductive via electrically connects the electronic component layer through-via to the rewiring layer of the other composite component layer. In a plane perpendicular to the thickness direction, a cross-sectional area of ​​the conductive via is larger than a cross-sectional area of ​​the sidewall portion through-via.

9. The composite component device according to any one of claims 1 to 4, wherein: The rewiring layer is directly bonded to the component electrode.

10. The composite component device according to any one of claims 1 to 5 and claim 9, wherein: The rewiring layer has a dielectric film substantially composed of an organic material.

11. The composite component device according to claim 10, wherein: A cross-sectional area of ​​the electronic component layer through via in a plane perpendicular to the thickness direction increases from the second surface toward the first surface.

12. A method for manufacturing a composite component device, comprising manufacturing the composite component device according to any one of claims 1 to 8, wherein: The electronic component layer of the composite component device further comprises: a side wall portion configured to surround the one or more electronic components, the electronic component layer through-hole penetrating the side wall portion; and The resin sealing portion integrates the one or more electronic components. The method for manufacturing the composite component device comprises: an electronic component bonding step of bonding the one or more electronic components to the Si base layer so that a plurality of component electrodes of the one or more electronic components are in contact with a bottom portion of the Si base layer having a lattice-shaped sidewall portion via the electronic component bonding layer; an electronic component sealing step of sealing the one or more electronic components with a resin to form a resin sealing portion; a rewiring layer forming step of forming the rewiring layer to form a composite component layer; and a lamination step of forming another composite component layer through the electronic component bonding step, the electronic component sealing step, and the rewiring layer forming step, forming an electronic component layer through-hole in the other composite component layer, and laminating another composite component on the composite component layer, The lamination process is performed at least once.

13. The method for manufacturing a composite component device according to claim 12, wherein: Also includes: A Si base layer thinning step, thinning the Si base layer; a through hole forming step of forming a through hole in the thinned Si base layer and the electronic component adhesive layer to expose a portion of the surface of the component electrode; and A Si through via forming step of forming a Si through via in the through hole, The Si through-via penetrates the Si base layer and the electronic component adhesive layer to electrically connect the rewiring layer and the component electrode of the electronic component. The dielectric film of the rewiring layer is substantially composed of an inorganic material.

14. The method for manufacturing a composite component device according to claim 12, wherein: The method further comprises a Si base layer removal step of removing the Si base layer and the electronic component adhesive layer to expose the entire surface of the component electrode. The dielectric film of the rewiring layer is substantially composed of an organic material.

15. A method for manufacturing a composite component device, comprising manufacturing the composite component device according to any one of claims 1 to 5 and claim 9, wherein: The electronic component layer of the composite component device further includes a resin sealing portion that integrates the one or more electronic components. The rewiring layer further includes a dielectric film directly bonded to the component electrode and substantially composed of an organic material, The method for manufacturing the composite component device comprises: an electronic component bonding step of bonding the one or more electronic components to the Si support member so that the second surface of the one or more electronic components is in contact with the Si support member via the electronic component bonding layer; an electronic component sealing step of sealing the one or more electronic components with a resin to form a resin sealing portion; a resin sealing portion thinning step of thinning the resin sealing portion to expose the entire surface of the component electrode; a rewiring layer forming step of forming the rewiring layer to form a composite component layer; as well as a lamination step of forming the electronic component layer through-hole on the composite component layer, bonding the one or more electronic components to the composite component layer so that the second surface of the one or more electronic components contacts the composite component layer via the electronic component bonding layer, sealing the one or more electronic components with a resin to form a resin sealing portion, thinning the resin sealing portion to expose the entire surface of the component electrode, forming a rewiring layer and laminating another composite component layer on the composite component layer, The lamination process is performed at least once.

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