Semiconductor ceramic-based circuit board and high-precision processing method thereof

Abstract

The invention discloses a semiconductor ceramic-based circuit board and a high-precision processing method thereof, and the method specifically comprises the steps: providing a substrate, and presetting a low-temperature co-fired ceramic raw material layer on the substrate; forming a through hole in the low-temperature co-fired ceramic raw material layer, and filling the through hole with metal slurry; low-temperature co-firing is conducted on the low-temperature co-fired ceramic raw material layer and the metal slurry through microwaves, the low-temperature co-fired ceramic raw material layer is sintered into a co-fired ceramic layer, and a metal column formed by the metal slurry is embedded in the co-fired ceramic layer; and the column end face of the metal column is covered with nickel powder, the nickel powder is molten through laser to cover the metal column, and a nickel layer is formed. The interior and exterior of the low-temperature co-fired ceramic raw material layer are synchronously heated through microwave heating, and the position precision and size precision of the through hole are improved. Nickel powder is melted through laser cladding and covers the column end face of the metal column, a nickel layer is formed, and the metal column can be prevented from being separated from the through hole. The position precision and the size precision of the through hole can be maintained, and the stability of the structure is maintained.

Description

Technical Field

[0001] The invention relates to the technical field of circuit board processing, and in particular to a semiconductor ceramic-based circuit board and a high-precision processing method thereof. Background Art

[0002] A ceramic-based circuit board is a circuit board made of ceramic materials combined with a metal conductive layer. Compared with general organic resin circuit boards, ceramic-based circuit boards have the advantages of high thermal conductivity, high insulation, high mechanical strength, high temperature resistance, and chemical corrosion resistance. They are widely used in semiconductor packaging, 5G communications, LED lighting, aerospace and other fields.

[0003] At present, the processing methods of ceramic-based circuit boards mainly include active metal brazing, low-temperature co-fired ceramics, high-temperature co-fired ceramics and other processes; among them, the low-temperature co-fired ceramic process has become one of the mainstream processing methods for ceramic-based circuit boards because of its advantages of low cost and good compatibility. In the traditional low-temperature co-fired ceramic process, if a conductive vertical channel needs to be formed, the following method is usually adopted: pressing the ceramic embryo and the substrate, after pressing, forming a through hole by mechanical drilling or laser punching, and then co-firing to form a vertical channel, and then depositing or electroplating copper materials in the vertical channel to make the vertical channel conductive. However, in actual processing, it was found that: 1. The ceramic material will shrink and deform during the sintering process, making it difficult to ensure the dimensional accuracy of the vertical channel, especially in application scenarios that require high-density interconnection and tiny through holes, there is a risk of open circuit or short circuit; 2. The surface of the ceramic material is relatively inert, and the adhesion of the copper material is often poor, which is easy to delaminate or peel off during the subsequent electroplating or thermal cycle, and even easy to cause the copper material to fall off from the ceramic-based circuit board.

[0004] More commonly, technicians in this field can improve the precision by adding a pre-firing process to reduce the shrinkage of ceramics, but this can easily lead to a further increase in the deformation difference between the ceramic and copper materials, thereby reducing the interface bonding strength and affecting the overall stability; or, a more active metal interface layer can be used to enhance the bonding strength, but due to factors such as its diffusion, chemical reaction, and enhanced wettability, excessive diffusion is prone to occur, which can easily lead to a decrease in the dimensional accuracy of the vertical channel.

[0005] It can be seen that it is difficult for those skilled in the art to simultaneously improve the accuracy and structural stability of the vertical channels of the ceramic-based circuit board. Summary of the invention

[0006] The object of the present invention is to provide a semiconductor ceramic-based circuit board and a high-precision processing method thereof, so as to solve the problem that it is difficult to simultaneously ensure the accuracy and structural stability of the vertical channel of the ceramic-based circuit board.

[0007] To achieve this object, the present invention adopts the following technical solutions: A high-precision processing method for a semiconductor ceramic-based circuit board, comprising: S100, providing a substrate, on which a low-temperature co-fired ceramic raw material layer is preset; S200, opening a through hole on the low-temperature co-fired ceramic raw material layer, and filling the through hole with metal slurry; S300, co-firing the low-temperature co-fired ceramic raw material layer and the metal slurry at low temperature by microwaves, so that the low-temperature co-fired ceramic raw material layer is sintered into a co-fired ceramic layer, and a metal column formed by the metal slurry is embedded in the co-fired ceramic layer; S400, covering the end surface of the metal column with nickel powder, and melting the nickel powder with a laser to cover the metal column to form a nickel layer; In the step S200, the metal slurry is filled in the through hole through the ring body in the through hole, and the ring body is removed during the sintering process. The size of the ring body is related to the sintering deformation of the metal column and the sintering deformation of the low-temperature co-fired ceramic raw material layer.

[0008] Optionally, the step S200 specifically includes: Step S210, opening a through hole with a first diameter on the low-temperature co-fired ceramic raw material layer, and providing a ring body matching the through hole according to the first diameter; Step S220: disposing a ring body in the first through hole, and filling the inner side of the ring body with metal slurry.

[0009] Optionally, the step S300 includes: Step S310, setting the heating temperature at 100-300° C. by a microwave heating device, and maintaining the heating for 30-60 minutes; Step S320, setting the heating temperature at 300-500° C. by a microwave heating device, and maintaining the heating for 30-60 minutes; Step S330, setting the heating temperature at 800-850° C. by microwave heating equipment, and maintaining heating for 60-90 minutes.

[0010] Optionally, before step S210, the method further includes: Step S201, calculating the wall thickness t of the ring body according to the sintering deformation of the metal column and the sintering deformation of the low-temperature co-fired ceramic raw material layer at the through hole; Step S202: forming a ring body according to the first diameter and the wall thickness t.

[0011] Optionally, in step S201, the formula for the wall thickness t is: in, is the first diameter, is the initial diameter of the metal column, is the shrinkage rate of low-temperature co-fired ceramic raw materials, is the shrinkage of the metal slurry, is the thermal expansion coefficient of the metal column, is the sintering temperature difference of the metal column.

[0012] Optionally, in step S300, the heating power P of the microwave heating device; in, is the temperature rise efficiency, is the dielectric density of the microwave heating device, is the specific heat capacity of the medium of the microwave heating equipment, V is the volume of the medium of the microwave heating equipment, is the microwave absorption efficiency; ω is the microwave angular frequency, is the dielectric constant of vacuum, is the dielectric loss factor of the low-temperature co-fired ceramic raw material layer, and E is the microwave electric field intensity.

[0013] Optionally, the ring body is a paraffin ring, and the metal slurry is silver slurry.

[0014] Optionally, the step S400 includes: Step S410, depositing a titanium layer on the co-fired ceramic layer by evaporation coating, wherein the titanium layer covers the upper end surface of the metal column and the edge of the through hole; Step S420: Lay nickel powder on the titanium layer, and melt-coat the nickel powder on the titanium layer using a laser in scanning mode.

[0015] Optionally, the step S410 includes: The substrate is placed in a high vacuum evaporation chamber, and the titanium target is heated by an evaporation source, so that the titanium vapor is deposited on the upper end surface of the metal column and the edge of the through hole by diffusion.

[0016] A semiconductor ceramic-based circuit board adopts the high-precision processing method of the semiconductor ceramic-based circuit board as described above, comprising a substrate, a co-fired ceramic layer is arranged on the substrate, and a metal column is arranged in the co-fired ceramic layer.

[0017] Compared with the prior art, the present invention has the following beneficial effects: The semiconductor ceramic-based circuit board and its high-precision processing method provided by the present invention use microwave heating to heat the inside and outside of the low-temperature co-fired ceramic raw material layer synchronously, so that the low-temperature co-fired ceramic raw material is evenly heated, the non-uniform shrinkage of the ceramic matrix is ​​reduced, and the position accuracy and dimensional accuracy of the through hole are improved. Nickel powder is melted and covered on the column end face of the metal column by laser cladding to form a nickel layer. At this time, the nickel layer and the metal column form a metallurgical bond, which means that the nickel layer covers the outside of the metal column and can prevent the metal column from separating from the through hole; and because the energy density of laser cladding is high, local high-temperature treatment can be completed in a short time, avoiding long-term high temperature causing ceramic thermal expansion mismatch, thereby reducing interface thermal stress to maintain the accuracy of the through hole. Through the above-mentioned settings, the position accuracy and dimensional accuracy of the through hole can be maintained, and the setting of the nickel layer prevents the metal column from separating and maintains the stability of the structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0019] The structures, proportions, sizes, etc. illustrated in the drawings of this specification are only used to match the contents disclosed in the specification so as to facilitate understanding and reading by persons familiar with this technology. They are not used to limit the conditions under which the present invention can be implemented, and therefore have no substantive technical significance. Any structural modification, change in proportion or adjustment of size, without affecting the effects and purposes that can be achieved by the present invention, should still fall within the scope of the technical contents disclosed by the present invention.

[0020] Figure 1 A schematic flow chart of a high-precision processing method for a semiconductor ceramic-based circuit board provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0021] In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described below are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0022] In the description of the present invention, it should be understood that the terms "upper", "lower", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation of the present invention. It should be noted that when a component is considered to be "connected" to another component, it may be directly connected to the other component or there may be a centrally arranged component at the same time.

[0023] The technical solution of the present invention is further described below with reference to the accompanying drawings and through specific implementation methods.

[0024] Embodiment 1: The high-precision processing method for semiconductor ceramic-based circuit boards provided in this embodiment is intended to solve the problem that it is difficult to achieve both vertical channel accuracy and structural stability in the processing of traditional ceramic-based circuit boards. In order to solve this problem, this embodiment mainly adopts a combination of low-temperature co-fired ceramic process and microwave heating technology, and uses laser cladding technology to enhance the connection stability of metal columns. By specifically optimizing the high-precision processing method, the dimensional accuracy, positional accuracy and structural stability of the vertical channels of the semiconductor ceramic-based circuit boards are significantly improved, ensuring the good performance of the semiconductor ceramic-based circuit boards in high-density interconnection and tiny through-hole application scenarios.

[0025] Specifically, Figure 1 As shown, the high-precision processing method of the semiconductor ceramic-based circuit board provided by the embodiment of the present invention includes: Step S100, providing a substrate, on which a low temperature co-fired ceramic raw material layer is preset; The substrate is a substrate of a semiconductor ceramic-based circuit board, which is not limited in the present embodiment, and includes but is not limited to a copper plate, a PCB board, an alumina ceramic substrate, an aluminum nitride ceramic substrate, etc., which can withstand the thermal stress in the subsequent sintering process; the low-temperature co-fired ceramic raw material includes a composite material composed of glass, ceramic powder or other inorganic powder materials, and the selected low-temperature co-fired ceramic raw material can be sintered in a temperature range of about 500°C to 900°C to form a co-fired ceramic layer; Step S200, opening a through hole on the low temperature co-fired ceramic raw material layer, and filling the through hole with metal slurry; In the step S200, the metal slurry is filled in the through hole through the ring body in the through hole, and the ring body is removed during the sintering process. The size of the ring body is related to the sintering deformation of the metal column and the sintering deformation of the low-temperature co-fired ceramic raw material layer. It can be understood that the size setting of the ring body is matched with the above-mentioned sintering deformation, and can be removed during the sintering process in step S300. The space left is suitable for the sintering deformation of the metal column and the sintering deformation of the low-temperature co-fired ceramic raw material layer, thereby effectively balancing the deformation difference between the ceramic and metal materials caused by the temperature difference during the sintering process, thereby reducing the interface stress, thereby further improving the accuracy; Step S300, low-temperature co-fired ceramic raw material layer and metal slurry are co-fired by microwaves to sinter the low-temperature co-fired ceramic raw material layer into a co-fired ceramic layer, in which a metal column formed by the metal slurry is embedded; Step S400: Cover the end surface of the metal column with nickel powder, and melt the nickel powder with laser to cover the metal column to form a nickel layer.

[0026] Specifically, the high-precision processing method of the semiconductor ceramic-based circuit board in this embodiment uses microwave heating to heat the inside and outside of the low-temperature co-fired ceramic raw material layer synchronously, so that the low-temperature co-fired ceramic raw material is evenly heated, the non-uniform shrinkage of the ceramic matrix is ​​reduced, and the position accuracy and dimensional accuracy of the through hole are improved. The nickel powder is melted and covered on the column end face of the metal column by laser cladding to form a nickel layer. At this time, the nickel layer and the metal column form a metallurgical bond, which means that the nickel layer covers the outside of the metal column and can prevent the metal column from separating from the through hole; and because the energy density of laser cladding is high, local high-temperature treatment can be completed in a short time, avoiding long-term high temperature causing ceramic thermal expansion mismatch, thereby reducing interface thermal stress to maintain the accuracy of the through hole. Through the above settings, the position accuracy and dimensional accuracy of the through hole can be maintained, and the setting of the nickel layer prevents the metal column from separating and maintains the stability of the structure.

[0027] Further, step S200 specifically includes: Step S210, opening a through hole with a first diameter on the low-temperature co-fired ceramic raw material layer, and providing a ring body matching the through hole according to the first diameter; Step S220: disposing a ring body in the first through hole, and filling the inner side of the ring body with metal slurry.

[0028] Among them, the through hole is opened by laser drilling or mechanical drilling; the ring body is a structure matching the through hole, and its function is to support the filling of metal slurry and effectively control the shape of the metal column during the sintering process; the ring body can be formed by mold forming or 3D printing technology, and materials that are easy to process and can remain stable during the sintering process, such as paraffin rings, gypsum rings, etc., are selected, so that they can be removed during the sintering process to ensure the filling effect of the ring body on the metal slurry, so as to ensure the bonding stability between the formed metal column and the co-fired ceramic layer, thereby ensuring the stability and precision of the metal column.

[0029] As a preferred embodiment, the ring body is a paraffin ring, and the metal slurry is silver slurry.

[0030] More specifically, step S300 includes: Step S310, setting the heating temperature at 100-300° C. by a microwave heating device, and maintaining the heating for 30-60 minutes; Step S320, setting the heating temperature at 300-500° C. by a microwave heating device, and maintaining the heating for 30-60 minutes; Step S330, setting the heating temperature at 800-850° C. by microwave heating equipment, and maintaining heating for 60-90 minutes.

[0031] Referring to step S310, in the initial stage of sintering, the organic matter in the silver paste volatilizes, and the silver paste is in a contracted state. Similarly, the particles of the low-temperature co-fired ceramic raw material are slightly bonded to each other, and the overall change is small; and at this temperature, the paraffin ring gradually melts and volatilizes to initially form a silver column in the through hole. At this time, a gap is left between the silver column and the through hole, and the gap matches the thickness of the paraffin ring; Referring to step S320, in the middle stage of sintering, the surface of the silver particles in the silver paste begins to sinter, and the silver particles form a preliminary connection through diffusion; at this time, the wettability of silver is enhanced and begins to contact the ceramic particles. At the same time, as the glass phase softens, the ceramic particles rearrange and densify, resulting in a large proportion of shrinkage; Referring to step S330, in the later stage of sintering, the silver particles grow through stronger diffusion and complete the densification process, the density of the silver column increases, and the connection between the silver particles is tighter. At this time, the low-temperature co-fired ceramic layer of the semiconductor ceramic-based circuit board also undergoes a sintering process, the ceramic layer gradually densifies, and interfacial bonding occurs with the silver column; the high wettability of silver enables it to effectively bond with the ceramic surface to form a strong metal-ceramic bonding interface. At this stage, the metal particles in the silver paste are completely sintered to form high-density silver columns, and the metal-ceramic interface is stable, providing the required conductivity and mechanical strength.

[0032] Furthermore, before step S210, the method further includes: Step S201, calculating the wall thickness t of the ring body according to the sintering deformation of the metal column and the sintering deformation of the low-temperature co-fired ceramic raw material layer at the through hole; Step S202: forming a ring body according to the first diameter and the wall thickness t.

[0033] It is understandable that in step S201, the wall thickness of the ring body needs to be calculated first according to the sintering deformation of the metal column and the sintering deformation of the low-temperature co-fired ceramic raw material layer at the through hole. The deformation of the metal column and the ceramic matrix during the sintering process has different properties, especially the shrinkage rate of the ceramic material during sintering is different from the thermal expansion coefficient of the metal column, which will lead to the stress difference between the metal column and the ceramic matrix after sintering. By considering these factors, the appropriate wall thickness t of the ring body can be calculated to ensure that the metal column can maintain a stable structure during the sintering process, while preventing the metal column from being displaced or falling off due to excessive thermal stress or uneven deformation. In other words, by calculating the wall thickness t, the ring body can be formed according to this parameter. The ring body can be made of paraffin material, which has good formability and low sintering temperature. It can be completely removed after sintering without affecting the final structure. It can provide support when the metal slurry fills the through hole, ensure the correct filling of the metal slurry, and prevent the slurry from being lost or offset during the sintering process.

[0034] As a specific implementation, in step S201, the formula for the wall thickness t is: in, is the first diameter, is the initial diameter of the metal column, is the shrinkage rate of low-temperature co-fired ceramic raw materials, is the shrinkage of the metal slurry, is the thermal expansion coefficient of the metal column, is the sintering temperature difference of the metal column. It should be noted that the shrinkage rate of the low-temperature co-fired ceramic raw material It is determined by the properties of the purchased low-temperature co-fired ceramic raw materials. It can be determined by the parameters provided by the purchasing manufacturer and can also be measured through testing; the shrinkage rate of the metal slurry It is related to the organic matter and solvent of the metal paste, which can also be determined by the parameters provided by the purchasing manufacturer, and can also be measured by testing; The thermal expansion coefficient of the metal column is related to the physical properties of silver and can be obtained by looking up the table; the sintering temperature difference of the metal column refers to the difference between the temperature after the metal column is formed and the temperature at the end of sintering; through the above settings, the deformation of the metal column and the ceramic substrate during the sintering process can be calculated, the wall thickness of the ring body can be better controlled, and the stability of the metal column during the sintering process can be ensured, avoiding the displacement or falling off of the metal column due to inappropriate wall thickness of the ring body, and due to the supporting effect of the ring body, the metal slurry can be evenly distributed in the through hole, avoiding the loss or offset of the metal slurry during the sintering process, thereby improving the dimensional accuracy and positional accuracy of the through hole, and effectively balancing the deformation differences between ceramic and metal materials caused by temperature differences during the sintering process, thereby reducing interface stress and improving the structural stability of the circuit board.

[0035] As a specific implementation, in step S300, the heating power P of the microwave heating device; in, is the temperature rise efficiency, is the dielectric density of the microwave heating device, is the specific heat capacity of the medium of the microwave heating equipment, V is the volume of the medium of the microwave heating equipment, is the microwave absorption efficiency; ω is the microwave angular frequency, is the dielectric constant of vacuum, is the dielectric loss factor of the low-temperature co-fired ceramic raw material layer, and E is the microwave electric field intensity.

[0036] It should be noted that according to the vacuum dielectric constant , Dielectric loss factor of low temperature co-fired ceramic raw material layer , microwave angular frequency ω, microwave electric field intensity E, medium specific heat capacity , calculate the temperature rise efficiency ; Among them, the vacuum dielectric constant These are all directly identifiable values. The dielectric loss factor of the low-temperature co-fired ceramic raw material layer is It can be determined by purchasing parameters provided by the manufacturer, and can also be measured by testing; the microwave angular frequency ω and the microwave electric field strength E are preset values ​​of the microwave heating device, which are related to the microwave heating device used and are not limited in this embodiment. The microwave electric field strength E can be selected as 3×104V / m, and the microwave angular frequency ω can be selected as 2.45 GHz; the dielectric density Specific heat capacity of medium The medium volume V refers to the density, specific heat capacity and volume of the low-temperature co-fired ceramic raw material layer, which can also be determined by the parameters provided by the purchasing manufacturer and can also be measured through testing.

[0037] It is understandable that microwave heating can achieve synchronous heating of the inside and outside of the low-temperature co-fired ceramic raw material layer, ensuring that the ceramic material and the metal slurry can be evenly heated during the sintering process, thereby improving the accuracy and stability of the through-hole. Microwave heating can not only accelerate the sintering process, but also reduce the thermal stress caused by the temperature difference between the ceramic substrate and the metal column, ensuring the structural stability of the circuit board. The above settings further optimize the entire heating process by precisely controlling the parameters of the microwave heating equipment, improve the dimensional accuracy and performance of the product, provide a reference for parameter setting before formal production, and more accurately provide a reference for the setting direction of technicians in this field.

[0038] Based on the above implementation, step S400 includes: Step S410, depositing a titanium layer on the co-fired ceramic layer by evaporation coating, wherein the titanium layer covers the upper end surface of the metal column and the edge of the through hole; Step S420: Lay nickel powder on the titanium layer, and melt the nickel powder onto the titanium layer by a laser in scanning mode. The nickel powder can be applied by electrostatic spraying, mechanical coating, or manual spreading. The laser includes but is not limited to a fiber laser and a CO2 laser. The laser power should be maintained between 100-500 watts, and the scanning speed should be controlled between 5-15 mm / s to ensure that the nickel layer is evenly and firmly attached to the titanium layer.

[0039] More specifically, the step S410 includes: The substrate is placed in a high vacuum evaporation chamber, and the titanium target is heated by an evaporation source, so that the titanium vapor is deposited on the upper end surface of the metal column and the edge of the through hole by diffusion.

[0040] The substrate is placed in a high vacuum evaporation chamber, and the titanium target is heated by an evaporation source. The titanium target evaporates into titanium vapor at high temperature, and is deposited on the upper end surface of the metal column and the edge of the through hole by diffusion. The titanium vapor is uniformly deposited on the surface of the metal column through the diffusion effect of the high vacuum environment to form a uniform titanium layer; the deposition time of the titanium layer is 10-30 minutes, and the deposition temperature is about 200-300°C. After the titanium layer is deposited, nickel powder is laid on the titanium layer, and then the nickel powder is melted by laser scanning cladding technology to form a uniform nickel layer. The cladding process of the nickel layer ensures that the nickel powder can be evenly covered on the surface of the titanium layer, and finally a nickel layer with a thickness of 10-50μm is formed. The overall thickness is small, and the silver column can be protected from oxidation, thereby improving the stability of the structure. The nickel layer plays an important role in enhancing the conductivity and adhesion of the metal column, and prevents the metal column from separating from the ceramic-based circuit board. In addition, through the above-mentioned evaporation coating and laser cladding technology, the present invention effectively solves the interface problem between the metal column and the ceramic-based circuit board. The dual protection of the titanium layer and the nickel layer not only improves the bonding strength between the metal column and the ceramic-based circuit board, but also enhances the electrical conductivity and mechanical stability of the metal column, significantly improving the reliability and performance of the ceramic-based circuit board, especially the stability in high-frequency and high-temperature working environments.

[0041] Embodiment 2: This embodiment also provides a semiconductor ceramic-based circuit board, which adopts the high-precision processing method of the semiconductor ceramic-based circuit board of embodiment one, including a substrate, on which a co-fired ceramic layer is provided, and in which a metal column is provided, and a titanium layer and a nickel layer can be provided on the metal column.

[0042] As described above, the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features thereof may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A high-precision processing method for a semiconductor ceramic-based circuit board, characterized in that: include: Step S100, providing a substrate, on which a low temperature co-fired ceramic raw material layer is preset; Step S200, opening a through hole on the low temperature co-fired ceramic raw material layer, and filling the through hole with metal slurry; Step S300, low-temperature co-fired ceramic raw material layer and metal slurry are co-fired by microwaves to sinter the low-temperature co-fired ceramic raw material layer into a co-fired ceramic layer, in which a metal column formed by the metal slurry is embedded; Step S400, covering the end surface of the metal column with nickel powder, and melting the nickel powder with a laser to cover the metal column to form a nickel layer; In the step S200, the metal slurry is filled in the through hole through the ring body in the through hole, and the ring body is removed during the sintering process. The size of the ring body is related to the sintering deformation of the metal column and the sintering deformation of the low-temperature co-fired ceramic raw material layer.

2. A high-precision processing method for a semiconductor ceramic-based circuit board according to claim 1, characterized in that: The step S200 specifically includes: Step S210, opening a through hole with a first diameter on the low-temperature co-fired ceramic raw material layer, and providing a ring body matching the through hole according to the first diameter; Step S220: disposing a ring body in the first through hole, and filling the inner side of the ring body with metal slurry.

3. The high-precision processing method of a semiconductor ceramic-based circuit board according to claim 2, characterized in that: The step S300 includes: Step S310, setting the heating temperature at 100-300° C. by a microwave heating device, and maintaining the heating for 30-60 minutes; Step S320, setting the heating temperature at 300-500° C. by a microwave heating device, and maintaining the heating for 30-60 minutes; Step S330, setting the heating temperature at 800-850° C. by microwave heating equipment, and maintaining heating for 60-90 minutes.

4. The high-precision processing method of a semiconductor ceramic-based circuit board according to claim 2, characterized in that: Before step S210, the method further includes: Step S201, calculating the wall thickness t of the ring body according to the sintering deformation of the metal column and the sintering deformation of the low-temperature co-fired ceramic raw material layer at the through hole; Step S202: forming a ring body according to the first diameter and the wall thickness t.

5. A high-precision processing method for a semiconductor ceramic-based circuit board according to claim 4, characterized in that: In step S201, the formula for the wall thickness t is: in, is the first diameter, is the initial diameter of the metal column, is the shrinkage rate of low-temperature co-fired ceramic raw materials, is the shrinkage of the metal slurry, is the thermal expansion coefficient of the metal column, is the sintering temperature difference of the metal column.

6. The high-precision processing method of a semiconductor ceramic-based circuit board according to claim 4, characterized in that: In the step S300, the heating power P of the microwave heating device; in, is the temperature rise efficiency, is the dielectric density of the microwave heating device, is the specific heat capacity of the medium of the microwave heating equipment, V is the volume of the medium of the microwave heating equipment, is the microwave absorption efficiency; ω is the microwave angular frequency, is the dielectric constant of vacuum, is the dielectric loss factor of the low-temperature co-fired ceramic raw material layer, and E is the microwave electric field intensity.

7. A high-precision processing method for a semiconductor ceramic-based circuit board according to any one of claims 2 to 6, characterized in that: The ring body is a paraffin ring, and the metal slurry is silver slurry.

8. The high-precision processing method of a semiconductor ceramic-based circuit board according to claim 2, characterized in that: The step S400 includes: Step S410, depositing a titanium layer on the co-fired ceramic layer by evaporation coating, wherein the titanium layer covers the upper end surface of the metal column and the edge of the through hole; Step S420: Lay nickel powder on the titanium layer, and melt-coat the nickel powder on the titanium layer using a laser in scanning mode.

9. A high-precision processing method for a semiconductor ceramic-based circuit board according to claim 8, characterized in that: The step S410 includes: The substrate is placed in a high vacuum evaporation chamber, and the titanium target is heated by an evaporation source, so that the titanium vapor is deposited on the upper end surface of the metal column and the edge of the through hole by diffusion.

10. A semiconductor ceramic-based circuit board, characterized in that: A high-precision processing method for a semiconductor ceramic-based circuit board according to any one of claims 1 to 9 comprises a substrate on which a co-fired ceramic layer is provided, wherein the co-fired ceramic layer is provided with a metal column.

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