An atomic layer deposition system and method

Abstract

The application relates to the technical field of atomic layer deposition, and particularly provides an atomic layer deposition system and method. The system comprises a reaction chamber, a carrier, a lifting driving mechanism, a process gas supply assembly connected with a process gas inlet, an inert gas supply assembly connected with a gas permeation opening through an air inlet pipeline, a heating unit and a flow adjusting unit arranged on the air inlet pipeline, and a controller. The controller is used for obtaining a corresponding pre-calibration parameter combination according to the type of the currently supplied process gas and the current pressure of the reaction chamber, and is also used for controlling the heating unit and the flow adjusting unit to adjust the heating amount and the air inlet amount of the inert gas according to a preset heating amount and a second preset air inlet amount, controlling the process gas supply assembly to adjust the air inlet amount of the process gas according to a first preset air inlet amount, and controlling the lifting driving mechanism to adjust the distance between the carrier and the process gas inlet according to a preset distance. The system can effectively improve the application effect of the atomic layer deposition technology and the product yield.

Description

Technical Field

[0001] This application relates to the field of atomic beam deposition technology, and more specifically, to an atomic layer deposition system and method. Background Technology

[0002] Atomic layer deposition (ALD) is widely used in the semiconductor industry due to its advantages such as low deposition temperature, good film uniformity, and high thickness accuracy. The deposition principle of ALD involves placing a substrate on a stage and alternately introducing different precursor gases (process gases) to react chemically with the substrate surface. After each reaction, an inert gas is used to purge the substrate, thus depositing thin films layer by layer. This technology requires extremely precise control of process parameters (including gas flow rate, temperature distribution, and pressure within the reaction chamber).

[0003] Traditional ALD equipment suffers from several technical drawbacks: First, different process gases require different process distances, but the stage-to-inlet distance in traditional equipment is fixed and cannot be dynamically adjusted according to process requirements. Second, the stage temperature control precision is insufficient; as the equipment is used for a longer period, temperature uniformity gradually deteriorates, affecting process stability. Furthermore, reaction byproducts accumulate on the stage surface, further exacerbating uneven temperature distribution and reducing process yield. These problems severely restrict the application of atomic layer deposition technology in high-end semiconductor manufacturing.

[0004] There is currently no effective technical solution to the above problems. Summary of the Invention

[0005] The purpose of this application is to provide an atomic layer deposition system and method that can effectively improve the application effect and product yield of atomic layer deposition technology.

[0006] In a first aspect, this application provides an atomic layer deposition system, comprising:

[0007] The reaction chamber has a process gas inlet at its top;

[0008] A stage is set inside the reaction chamber and has a vent.

[0009] The lifting drive mechanism is connected to the platform.

[0010] Process gas supply assembly, connected to the process gas inlet;

[0011] An inert gas supply assembly is connected to a vent via an inlet pipe, and the inlet pipe is equipped with a heating unit and a flow regulation unit.

[0012] The controller is used to obtain a corresponding pre-calibrated parameter combination based on the type of process gas currently supplied and the current pressure of the reaction chamber. The pre-calibrated parameter combination includes a preset heating amount, a first preset air intake amount, a preset distance, and a second preset air intake amount. It is also used to control the heating unit and the flow regulation unit to adjust the heating amount and air intake amount of the inert gas based on the preset heating amount and the second preset air intake amount, control the process gas supply component to adjust the air intake amount of the process gas based on the first preset air intake amount, and control the lifting drive mechanism to adjust the distance between the platform and the process gas inlet based on the preset distance.

[0013] This application provides an atomic layer deposition system that achieves comprehensive optimization of the thin film deposition process through the coordinated control of multiple key parameters. This dynamic and precise control capability enables this application to overcome the shortcomings of traditional equipment in terms of thin film uniformity, temperature control, and by-product management. Therefore, this application can effectively improve the application effect and product yield of atomic layer deposition technology, providing a more reliable solution for high-end semiconductor manufacturing.

[0014] Optionally, the stage is divided into multiple concentrically distributed temperature control zones, each temperature control zone is provided with multiple vents, and each vent in the temperature control zone is connected to a process gas supply assembly through at least one air inlet pipe.

[0015] Optionally, the atomic layer deposition system also includes an ellipsometer and a temperature acquisition component mounted on the reaction chamber. The ellipsometer is used to acquire film thickness information corresponding to each temperature control zone. The controller is also used to analyze whether the film thickness of the substrate to be deposited is uniform based on all film thickness information. When the film thickness of the substrate to be deposited is not uniform, the controller is also used to locate the film thickness abnormal area based on all film thickness information, and use the temperature acquisition component to acquire the first actual temperature information corresponding to the film thickness abnormal area. Then, based on the deviation between the first actual temperature information and the preset stage temperature, the controller controls the heating unit and flow regulation unit corresponding to the film thickness abnormal area to adjust the heating amount and intake amount of the inert gas.

[0016] Optionally, adjusting the heating amount and intake amount of the inert gas based on the deviation between the first actual temperature information and the preset stage temperature, controlling the heating unit and flow regulation unit corresponding to the abnormal film thickness area, includes:

[0017] A1. Analyze whether the inert gas intake volume corresponding to the abnormal film thickness region exceeds the first preset intake volume range. If yes, proceed to step A4; otherwise, proceed to step A2.

[0018] A2. Adjust the inert gas intake volume according to the first preset intake volume adjustment step size control flow regulation unit corresponding to the abnormal film thickness area.

[0019] A3. Analyze whether the first actual temperature information reaches the preset stage temperature and whether the inert gas intake corresponding to the abnormal film thickness area does not exceed the first preset intake range. If yes, end; otherwise, return to step A1.

[0020] A4. Analyze whether the heating amount of the inert gas corresponding to the abnormal film thickness area exceeds the first preset heating amount range. If yes, generate an alarm message; otherwise, proceed to step A5.

[0021] A5. Adjust the heating amount of inert gas in the heating unit corresponding to the abnormal film thickness area according to the first preset heating amount and the step size adjustment control.

[0022] A6. Analyze whether the first actual temperature information reaches the preset stage temperature and whether the heating amount of the inert gas corresponding to the abnormal film thickness area does not exceed the first preset heating amount range. If yes, then end; otherwise, return to step A4.

[0023] Optionally, step A4 includes:

[0024] A41. Analyze whether the heating amount of the inert gas corresponding to the abnormal film thickness region exceeds the first preset heating amount range. If yes, proceed to step A42; otherwise, proceed to step A5.

[0025] A42. Analyze whether the inert gas intake volume of all temperature control zones, except for the abnormal film thickness zone, exceeds the first preset intake volume range. If yes, proceed to step A48; otherwise, proceed to step A43.

[0026] A43. Analyze whether the film thickness information of the abnormal film thickness area is greater than the film thickness information of all temperature control areas except the abnormal film thickness area. If yes, proceed to step A44; otherwise, proceed to step A46.

[0027] A44. According to the first preset intake volume adjustment step size control, the flow regulation unit corresponding to all temperature control areas except the film thickness abnormal area reduces the intake volume of inert gas.

[0028] A45. Analyze whether the second actual temperature information corresponding to all temperature control areas except the film thickness abnormal area is greater than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas except the film thickness abnormal area is greater than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A42.

[0029] A46. According to the first preset intake volume adjustment step size control, the flow regulation unit corresponding to all temperature control areas except the film thickness abnormal area increases the intake volume of inert gas.

[0030] A47. Analyze whether the second actual temperature information corresponding to all temperature control areas other than the film thickness abnormal area is less than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas other than the film thickness abnormal area is less than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A42.

[0031] A48. Analyze whether the heating amount of the inert gas in all temperature control areas except for the abnormal film thickness area exceeds the first preset heating amount range. If yes, generate an alarm message; otherwise, execute step A49.

[0032] A49. Analyze whether the film thickness information of the abnormal film thickness area is greater than the film thickness information of all temperature control areas other than the abnormal film thickness area. If yes, proceed to step A50; otherwise, proceed to step A52.

[0033] A50. Adjust the step size according to the first preset heating amount to control the heating unit corresponding to all temperature control areas except for the abnormal film thickness area to increase the heating amount of inert gas.

[0034] A51. Analyze whether the second actual temperature information corresponding to all temperature control areas other than the film thickness abnormal area is greater than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas other than the film thickness abnormal area is greater than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A48.

[0035] A52. Adjust the step size according to the first preset heating amount to control the heating unit corresponding to all temperature control areas except for the abnormal film thickness area to reduce the heating amount of inert gas.

[0036] A53. Analyze whether the second actual temperature information corresponding to all temperature control areas other than the film thickness abnormal area is less than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas other than the film thickness abnormal area is less than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A48.

[0037] Optionally, the pre-calibration process for the pre-calibration parameter combination includes:

[0038] B1. Adjust the distance between the stage and the process gas inlet, the process gas inlet flow rate, the inert gas heating amount, and the inert gas inlet flow rate to the preset initial values, and use an ellipsometry to record the first film formation rate information at this time.

[0039] B2. Analyze whether the distance between the stage and the process gas inlet exceeds the preset distance range. If yes, proceed to step B4; otherwise, proceed to step B3.

[0040] B3. Adjust the step length control lifting drive mechanism according to the preset spacing to adjust the distance between the stage and the process gas inlet, and use an ellipsometry to record the first film formation speed information at this time, and then return to step B2.

[0041] B4. Take the distance between the stage and the process gas inlet corresponding to the maximum value of the first film formation speed information as the preset distance, and control the lifting drive mechanism to adjust the distance between the stage and the process gas inlet to the preset distance.

[0042] B5. Analyze whether the intake volume of the process gas exceeds the second preset intake volume range. If yes, proceed to step B7; otherwise, proceed to step B6.

[0043] B6. Adjust the process gas intake of the process gas supply component according to the second preset intake volume, and record the second film formation speed information at this time using an ellipsometry, and then return to step B5.

[0044] B7. Take the process gas intake amount corresponding to the maximum value of the second film formation speed information as the first preset intake amount, and control the process gas supply component to bring the process gas intake amount to the first preset intake amount.

[0045] B8. Analyze whether the intake volume of the inert gas exceeds the third preset intake volume range. If yes, proceed to step B10; otherwise, proceed to step B9.

[0046] B9. Adjust the inert gas intake according to the third preset intake volume adjustment step size control flow adjustment unit, and use the ellipsometry to record the third film formation rate information at this time, and then return to step B8.

[0047] B10. The inert gas intake corresponding to the maximum value of the third film formation rate information is used as the second preset intake volume, and the flow regulation unit is controlled to adjust the inert gas intake volume to the second preset intake volume.

[0048] B11. Analyze whether the heating amount of the inert gas exceeds the second preset heating amount range. If yes, proceed to step B13; otherwise, proceed to step B12.

[0049] B12. Adjust the heating amount of the inert gas by adjusting the step size control heating unit according to the second preset heating amount, and record the fourth film formation rate information at this time using an ellipsometry, and then return to step B11.

[0050] B13. Take the heating amount of the inert gas corresponding to the maximum value of the fourth film formation rate information as the preset heating amount, and then combine the preset heating amount, the first preset air intake amount, the preset spacing and the second preset air intake amount into a preset calibration parameter combination.

[0051] Optionally, multiple air vents within the same temperature control area are evenly distributed within that temperature control area.

[0052] Optionally, the reaction chamber is also provided with an exhaust port, and the process gas inlet and the exhaust port are respectively located on both sides of the stage.

[0053] Optionally, the process gas inlet is located directly above the center of the stage, and there are multiple exhaust gas outlets, which are symmetrically arranged with the center of the stage as the center of symmetry.

[0054] Secondly, this application also provides an atomic layer deposition method, applied to the atomic layer deposition system provided in the first aspect above. The atomic layer deposition method includes the following steps:

[0055] S1. Obtain the corresponding pre-calibrated parameter combination based on the type of process gas currently supplied and the current pressure of the reaction chamber. The pre-calibrated parameter combination includes the preset heating amount, the first preset air intake amount, the preset spacing, and the second preset air intake amount.

[0056] S2. The heating unit and flow regulation unit adjust the heating amount and intake amount of the inert gas according to the preset heating amount and the second preset intake amount. The process gas supply component adjusts the intake amount of the process gas according to the first preset intake amount. The lifting drive mechanism adjusts the distance between the platform and the process gas inlet according to the preset distance.

[0057] This application provides an atomic layer deposition method that achieves comprehensive optimization of the thin film deposition process through the coordinated control of multiple key parameters. This dynamic and precise control capability enables this application to overcome the shortcomings of traditional equipment in terms of thin film uniformity, temperature control, and by-product management. Therefore, this application can effectively improve the application effect and product yield of atomic layer deposition technology, providing a more reliable solution for high-end semiconductor manufacturing.

[0058] As can be seen from the above, the atomic layer deposition system and method provided in this application achieve comprehensive optimization of the thin film deposition process through the coordinated control of multiple key parameters. This dynamic and precise control capability enables this application to overcome the defects of traditional equipment in terms of thin film uniformity, temperature control and by-product management. Therefore, this application can effectively improve the application effect and product yield of atomic layer deposition technology, and provide a more reliable solution for high-end semiconductor manufacturing. Attached Figure Description

[0059] Figure 1 This is a schematic diagram of an atomic layer deposition system provided in an embodiment of this application.

[0060] Figure 2 This is a schematic diagram of the platform provided in an embodiment of this application.

[0061] Figure 3 This is a schematic diagram of the structure of the inert gas supply assembly and the intake pipeline provided in the embodiments of this application.

[0062] Figure 4 This is a schematic diagram of the connection relationship of an atomic layer deposition system provided in an embodiment of this application.

[0063] Figure 5 This is a flowchart of an atomic layer deposition method provided in an embodiment of this application.

[0064] Reference numerals in the attached drawings: 1. Reaction chamber; 2. Process gas inlet; 3. Stage; 4. Vent; 5. Lifting drive mechanism; 6. Process gas supply assembly; 7. Inert gas supply assembly; 8. Inlet pipeline; 9. Heating unit; 10. Flow regulation unit; 11. Controller; 12. Ellipsometry; 13. Temperature acquisition assembly; 14. Exhaust gas outlet. Detailed Implementation

[0065] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. The components of the embodiments of this application described and shown in the accompanying drawings can be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of this application provided in the accompanying drawings is not intended to limit the scope of the claimed application, but merely represents selected embodiments of this application. All other embodiments obtained by those skilled in the art based on the embodiments of this application without inventive effort are within the scope of protection of this application.

[0066] It should be noted that similar reference numerals and letters in the following figures indicate similar items; therefore, once an item is defined in one figure, it does not need to be further defined and explained in subsequent figures. Furthermore, in the description of this application, terms such as "first," "second," etc., are used only to distinguish descriptions and should not be construed as indicating or implying relative importance.

[0067] Firstly, such as Figures 1-4 As shown, this application provides an atomic layer deposition system, which includes:

[0068] The reaction chamber 1 has a process gas inlet 2 at its top;

[0069] The stage 3 is set inside the reaction chamber 1 and has a vent 4 on it;

[0070] The lifting drive mechanism 5 is connected to the platform 3;

[0071] Process gas supply component 6 is connected to process gas inlet 2;

[0072] The inert gas supply assembly 7 is connected to the vent 4 through the air inlet pipe 8. The air inlet pipe 8 is equipped with a heating unit 9 and a flow regulation unit 10.

[0073] The controller 11 is used to obtain a corresponding pre-calibrated parameter combination based on the type of process gas currently supplied and the current pressure of the reaction chamber 1. The pre-calibrated parameter combination includes a preset heating amount, a first preset air intake amount, a preset distance, and a second preset air intake amount. It is also used to control the heating unit 9 and the flow regulating unit 10 to adjust the heating amount and air intake amount of the inert gas based on the preset heating amount and the second preset air intake amount, control the process gas supply component 6 to adjust the air intake amount of the process gas based on the first preset air intake amount, and control the lifting drive mechanism 5 to adjust the distance between the platform 3 and the process gas inlet 2 based on the preset distance.

[0074] For ease of understanding, some key terms in this embodiment are explained below. The reaction chamber 1 in this embodiment is the main space where the atomic layer deposition process takes place. Its internal environment (such as pressure and temperature) is precisely controlled to ensure the quality and uniformity of the thin film deposition. The top of the reaction chamber 1 is provided with a process gas inlet 2 for introducing process gas (precursor gas). In this embodiment, the stage 3 is disposed within the reaction chamber 1. The stage 3 is used to place the substrate to be deposited (the substrate to be atomic beam deposited). The surface of the stage 3 is provided with vents 4, which are connected to the inert gas supply assembly 7. This embodiment can regulate the temperature of the stage 3 by providing temperature- and flow-controlled inert gas to the stage 3 during the atomic beam deposition process. Since the inert gas supplied by the inert gas supply assembly 7 can enter the reaction chamber 1 through the vents 4, an inert gas flow can be formed on the surface of the stage 3 during the atomic layer deposition process. This inert gas flow can reduce the generation and deposition of by-products on the sidewalls of the stage 3 and the substrate to be deposited during the atomic beam deposition process, thereby minimizing the possibility of uneven temperature distribution and reduced process yield due to the accumulation of reaction by-products on the surface of the stage 3, and the degradation of film quality due to the deposition of by-products on the sidewalls of the substrate to be deposited. In this embodiment, the lifting drive mechanism 5 is connected to the stage 3. Since the process gas inlet 2 is located at the top of the reaction chamber 1, this embodiment can change the distance between the stage 3 and the process gas inlet 2 by precisely adjusting the vertical position of the stage 3 within the reaction chamber 1. This adjustment of the distance is crucial for optimizing the deposition efficiency and film uniformity of different process gases. The process gas supply component 6 in this embodiment is responsible for storing and delivering process gas to the process gas inlet 2 of the reaction chamber 1. This component can precisely control the flow rate and supply time of the process gas to ensure that the chemical reaction during atomic layer deposition proceeds in a predetermined manner. It should be understood that the process gas supply component 6 in this embodiment is prior art, and its working principle will not be discussed in detail here. In this embodiment, the inert gas supply component 7 is used to store and transport inert gas (such as nitrogen or argon) to the vent 4 of the stage 3 through the inlet pipe 8. The inlet pipe 8 of this embodiment is equipped with a heating unit 9 and a flow regulation unit 10. The heating unit 9 is used to regulate the temperature of the inert gas by adjusting the heating amount of the inert gas, and the flow regulation unit 10 is used to regulate the inert gas intake of the reaction chamber 1 by adjusting the flow rate of the inert gas in the inlet pipe 8. The inert gas plays a role in reducing the generation and deposition of by-products and regulating the temperature of the stage 3 during the atomic layer deposition process. Since this embodiment uses inert gas to regulate the temperature of the stage 3, and gas temperature regulation has the advantage of fast response speed, this embodiment can realize real-time feedback regulation of the temperature of the stage 3.The controller 11 in this embodiment is the core control unit of the entire atomic layer deposition system. The controller 11 is responsible for coordinating and managing the operation of all components. The controller 11 can accurately control key parameters such as gas flow rate, temperature, and stage spacing according to preset process parameters and real-time feedback information to achieve high-quality thin film deposition.

[0075] This application provides an atomic layer deposition system, comprising a reaction chamber 1, a stage 3, a lifting drive mechanism 5, a process gas supply assembly 6, an inert gas supply assembly 7, and a controller 11. In this embodiment, the reaction chamber 1 is the core area for the atomic layer deposition process. Its top is equipped with a process gas inlet 2 for introducing precursor gases. The reaction chamber 1 in this embodiment can adopt various structures; for example, it can be a vacuum-sealed metal cavity with special internal treatment to reduce particulate contamination and chemical reactions. In practical applications, the size and shape of the reaction chamber 1 can be customized according to the size of the substrate to be deposited and the process requirements. For example, for the deposition of large-size wafers, the reaction chamber 1 may be designed with a larger internal space and a more complex flow field control structure. In this embodiment, the stage 3 is disposed within the reaction chamber 1. The stage 3 is used to support the substrate to be deposited. The surface of the stage 3 is provided with vents 4, which can be arranged in various ways, such as being evenly distributed across the surface of the stage 3 or concentrated in a specific area. The function of the vents 4 is to allow inert gas to pass through, thereby reducing the generation and deposition of by-products on the stage 3 and the sidewalls of the substrate during the deposition process while regulating the temperature of the stage 3. In this embodiment, a lifting drive mechanism 5 is connected to the stage 3. This mechanism is used to adjust the distance between the stage 3 and the process gas inlet 2. This mechanism can employ various driving methods, such as a lead screw mechanism driven by a stepper motor or servo motor, or a pneumatic or hydraulic drive system. This embodiment achieves dynamic adjustment of the stage 3 distance by precisely controlling the lifting drive mechanism 5 to adapt to the needs of different process gases and deposition conditions. For example, in some processes, a smaller distance is required to improve gas utilization, while in other processes, a larger distance is required to ensure the uniformity of the gas flow field. In this embodiment, the process gas supply component 6 is connected to the process gas inlet 2 and is responsible for supplying process gas to the reaction chamber 1. This component may include a process gas source, a mass flow controller, valves, and pipelines. The process gas supply component 6 can precisely control the type, flow rate, and supply sequence of the process gas. For example, multiple independent process gas supply components 6 can be used, each supplying different precursor gases. In this embodiment, the corresponding precursor gas is introduced at different stages of atomic layer deposition through precise timing control. In this embodiment, the inert gas supply component 7 is connected to the vent 4 of the stage 3 through an inlet pipe 8. The inlet pipe 8 is equipped with a heating unit 9 and a flow regulation unit 10. The heating unit 9 is used to heat the inert gas to regulate the temperature of the stage 3, and the flow regulation unit 10 is used to precisely control the flow rate of the inert gas. The heating unit 9 can be an electric heater, and the flow regulation unit 10 can be a mass flow controller. In this embodiment, by adjusting the temperature and flow rate of the inert gas, precise control of the temperature of the stage 3 can be achieved, thereby affecting the deposition rate and quality of the thin film.The controller 11 in this embodiment is the core of the entire system. It is used to obtain the corresponding pre-calibrated parameter combination according to the type of process gas currently supplied and the current pressure of the reaction chamber 1. The pre-calibrated parameter combination includes a preset heating amount, a first preset air intake amount, a preset distance, and a second preset air intake amount. The controller 11 can also control the heating unit 9 and the flow regulation unit 10 to adjust the heating amount and air intake amount of the inert gas according to the preset heating amount and the second preset air intake amount, control the process gas supply component 6 to adjust the air intake amount of the process gas according to the first preset air intake amount, and control the lifting drive mechanism 5 to adjust the distance between the platform 3 and the process gas inlet 2 according to the preset distance. Specifically, the controller 11 in this embodiment can be a programmable logic controller (PLC) or a computer-based control system. It stores the pre-calibrated parameter combination corresponding to different process gas types and reaction chamber 1 pressures. For example, when the process gas type is alumina precursor and the pressure of the reaction chamber 1 is 100 Pa, the controller 11 can obtain the corresponding preset heating amount, first preset air intake amount, preset distance, and second preset air intake amount from the memory and control each actuator accordingly.

[0076] The following example provides a more detailed explanation of the above technical solution: Suppose that during atomic layer deposition (ALD), a specific thin film, such as an alumina film, needs to be deposited. In traditional ALD systems, the fixed distance between the stage 3 and the air inlet, coupled with insufficient temperature control precision, leads to poor film uniformity, affecting product yield. Furthermore, reaction byproducts accumulate on the surface of stage 3, further exacerbating uneven temperature distribution and reducing process yield. Failure to address these issues will directly result in a decline in film quality, failing to meet the demands of high-end semiconductor manufacturing, thus impacting product performance and reliability.

[0077] To address this issue, this application proposes an atomic layer deposition system that effectively solves the aforementioned problems. Specifically, during the deposition of alumina thin films, the controller 11 first obtains a pre-calibrated parameter combination based on the currently supplied alumina precursor type and the current pressure of the reaction chamber 1 (e.g., set to 100 Pa). This parameter combination is obtained through prior experiments and optimizations and includes a preset heating amount, a first preset gas intake amount (process gas intake amount), a preset spacing, and a second preset gas intake amount (inert gas intake amount) for the alumina deposition process. After obtaining the parameter combination, the controller 11 coordinates the control of various components. Specifically, the controller 11 controls the heating unit 9 in the inert gas supply component 7 to heat the inert gas according to the preset heating amount and the second preset gas intake amount, and controls the flow regulation unit 10 to adjust the inert gas intake amount. For example, the inert gas is heated to a specific temperature and passes through the vent 4 of the stage 3 at a specific flow rate to adjust the actual temperature of the stage 3 to the preset temperature and form a uniform inert gas flow on the substrate surface. Simultaneously, the controller 11 controls the process gas supply component 6 to adjust the intake volume of the alumina precursor according to the first preset intake volume, ensuring that the precursor enters the reaction chamber 1 at the preset flow rate. Furthermore, the controller 11 also controls the lifting drive mechanism 5 to adjust the distance between the stage 3 and the process gas inlet 2 according to a preset spacing, achieving a suitable distance for alumina deposition. Through this coordinated control, the system can dynamically adjust the stage 3 spacing, process gas intake volume, inert gas heating amount, and intake volume, thereby optimizing the thin film deposition process. This dynamic adjustment capability allows the system to adapt to different process conditions and thin film requirements, significantly improving the uniformity and deposition quality of the thin film.

[0078] The atomic layer deposition system of this embodiment dynamically acquires and applies pre-calibrated parameter combinations through controller 11, achieving coordinated control of stage spacing 3, process gas inlet flow rate, inert gas heating amount, and inlet flow rate, thereby optimizing the thin film deposition process. Compared with conventional atomic layer deposition systems, the system of this application has significant technological contributions.

[0079] Specifically, traditional systems suffer from problems such as a fixed distance between the stage 3 and the gas inlet, insufficient temperature control precision, and poor film uniformity due to byproduct accumulation. This application introduces a lifting drive mechanism 5, allowing the distance between the stage 3 and the process gas inlet 2 to be dynamically adjusted according to process requirements. This adapts to different process gases and deposition conditions, and optimizes the gas flow field and reaction efficiency. For example, in the above-mentioned alumina film deposition example, the controller 11 can precisely adjust the position of the stage 3 according to a preset distance, ensuring that the precursor gas contacts the substrate in the best manner, which is impossible in traditional fixed-distance equipment. Furthermore, this application, through the heating unit 9 and flow regulation unit 10 in the inert gas supply component 7, combined with the precise control of the controller 11, achieves fine adjustment of the inert gas heating amount and intake volume, thereby accurately controlling the temperature of the stage 3. This solves the problem of insufficient temperature control precision in traditional equipment, ensuring temperature uniformity and stability during the film deposition process. In the example above, the inert gas is heated to a specific temperature and enters the reaction chamber 1 at a specific flow rate. This not only helps maintain the temperature of the stage 3, but also effectively reduces the generation and deposition of reaction byproducts, thereby minimizing the uneven temperature distribution and reduced process yield caused by the accumulation of byproducts.

[0080] Therefore, the atomic layer deposition system provided in this application achieves comprehensive optimization of the thin film deposition process through the coordinated control of multiple key parameters. This dynamic and precise control capability enables this application to overcome the shortcomings of traditional equipment in terms of thin film uniformity, temperature control, and by-product management. Thus, this application can effectively improve the application effect and product yield of atomic layer deposition technology, providing a more reliable solution for high-end semiconductor manufacturing.

[0081] In some preferred embodiments, the stage 3 is divided into multiple concentrically distributed temperature control zones, each temperature control zone is provided with multiple vents 4, and each vent 4 in the temperature control zone is connected to a process gas supply assembly 6 through at least one air inlet pipe 8.

[0082] This embodiment divides the surface of the stage 3 into a series of annular regions centered on the center of the stage 3 by dividing the stage 3 into multiple concentrically distributed temperature-controlled zones. This division aims to achieve independent temperature management at different locations on the substrate surface, thereby adapting to the geometric characteristics of the substrate and avoiding local overheating or overcooling caused by overall temperature control. Each temperature-controlled zone is provided with multiple vents 4, which are tiny openings for gas flow. The purpose of providing multiple vents 4 is to ensure that the inert gas can enter the reaction chamber 1 as uniformly as possible within this specific temperature-controlled zone, thereby forming a stable and uniform inert gas flow. Since each vent 4 in each temperature control zone of this embodiment is connected to a process gas supply component 6 through at least one air inlet pipe 8, this embodiment enables the inert gas flow rate and inert gas temperature of each temperature control zone to be independently regulated, thereby enhancing the responsiveness of the system and allowing for precise control of gas flow rate and temperature in each zone. As a specific implementation, all vents 4 in each temperature control zone can be converged into a common manifold, which is then connected to the process gas supply component 6 through an independent air inlet pipe 8.

[0083] This embodiment divides the stage 3 into multiple concentrically distributed temperature control zones, and equips each temperature control zone with multiple vents 4. Each vent 4 within a temperature control zone is connected to a process gas supply component 6 via at least one inlet pipe 8, thereby achieving independent temperature control for different zones of the stage 3. In atomic layer deposition systems, the overall temperature control of the stage 3 cannot adapt to the differences between different zones, easily leading to uneven temperature distribution and inconsistent film deposition thickness. Through the above technical solution, the controller 11 can utilize this zoned control capability to independently adjust the heating amount and intake volume of the inert gas according to the actual needs of each temperature control zone. For example, when the temperature of a certain temperature control zone deviates from the preset value due to by-product deposition or other factors, the controller 11 can precisely adjust the heating unit 9 and flow regulation unit 10 corresponding to that zone to restore temperature uniformity. This refined area control, combined with the basic functions of the aforementioned atomic layer deposition system (including reaction chamber 1, stage 3, lifting drive mechanism 5, process gas supply assembly 6, inert gas supply assembly 7, and controller 11), enables the system to dynamically adapt to and correct spatial non-uniformity on the substrate surface, thereby achieving highly uniform thin film deposition across the entire substrate. This synergistic effect significantly improves the stability of the deposition process and the quality of the thin film.

[0084] In some preferred embodiments, the atomic layer deposition system further includes an ellipsometer 12 and a temperature acquisition component 13 disposed on the reaction chamber 1. The ellipsometer 12 is used to acquire film thickness information corresponding to each temperature control zone. The controller 11 is also used to analyze whether the film thickness of the substrate to be deposited is uniform based on all film thickness information. When the film thickness of the substrate to be deposited is not uniform, the controller 11 is also used to locate the film thickness abnormal area based on all film thickness information, and use the temperature acquisition component 13 to acquire the first actual temperature information corresponding to the film thickness abnormal area. Then, based on the deviation between the first actual temperature information and the preset stage 3 temperature, the heating unit 9 and the flow regulation unit 10 corresponding to the film thickness abnormal area are controlled to adjust the heating amount and the inert gas intake.

[0085] The ellipsometer 12 in this embodiment is a precision optical measurement device for measuring optical parameters such as film thickness and refractive index. The ellipsometer 12 in this embodiment is preferably an existing elliptic polarization spectrometer, the working principle of which will not be discussed in detail here. The temperature acquisition component 13 in this embodiment is a device for real-time monitoring and acquisition of the temperature of the substrate to be deposited. The temperature acquisition component 13 is used to acquire the first actual temperature information corresponding to areas of abnormal film thickness to diagnose temperature deviations. Specifically, the temperature acquisition component 13 in this embodiment can employ a thermocouple array, that is, multiple thermocouples are arranged in different temperature-controlled areas of the stage 3 to measure the temperature of the substrate to be deposited within that temperature-controlled area through direct contact. Alternatively, the temperature acquisition component 13 in this embodiment can employ an infrared thermometer to calculate the temperature by measuring the infrared radiation on the surface of the substrate to be deposited in a non-contact manner. In this embodiment, the controller 11 processes the film thickness information of all temperature-controlled areas collected by the ellipsometer 12 to determine the quality of the thin film deposition. Specifically, the controller 11 can preset a uniformity threshold. When there is film thickness information whose deviation from the average value of all film thickness information is greater than the uniformity threshold, the film thickness of the substrate to be deposited is considered to be non-uniform, and the temperature-controlled area corresponding to the film thickness information whose deviation from the average value of all film thickness information is greater than the uniformity threshold is marked as an abnormal film thickness area. When there is no film thickness information whose deviation from the average value of all film thickness information is greater than the uniformity threshold, the film thickness of the substrate to be deposited is considered to be uniform. After locating the abnormal film thickness area, the controller 11 sends a command to the temperature acquisition component 13 to obtain real-time temperature sensor data of the specific abnormal film thickness area, thereby obtaining the first actual temperature information, which provides an accurate basis for subsequent temperature adjustment. Then, based on the deviation between the obtained first actual temperature information and the preset stage 3 temperature, the controller 11 corrects the temperature deviation by adjusting the parameters of the inert gas (heating amount and air intake amount), thereby improving the film uniformity. For example, the controller 11 can calculate the power of the heating unit 9 and the opening degree of the flow regulating unit 10 that need to be adjusted according to the magnitude and direction of the temperature deviation through a PID (proportional-integral-derivative) control algorithm. Alternatively, the controller 11 can preset a lookup table for temperature deviation and adjustment parameters to correspond different temperature deviation ranges to the corresponding heating amount adjustment value and air intake amount adjustment value.

[0086] This embodiment achieves real-time monitoring and dynamic adjustment of film uniformity by introducing an ellipsometer 12 and a temperature acquisition component 13, combined with the intelligent analysis and adjustment functions of the controller 11. Specifically, during atomic layer deposition, the ellipsometer 12 continuously acquires film thickness information corresponding to each temperature-controlled region of the stage 3. After receiving this thickness information, the controller 11 analyzes it according to a preset uniformity standard (analyzing whether there is film thickness information whose deviation from the average value of all film thickness information is greater than the uniformity threshold) to determine whether the film thickness of the substrate to be deposited is uniform. Once the controller 11 detects a non-uniform film thickness, it immediately and accurately locates the abnormal film thickness region based on all film thickness information. To correct this abnormality, the controller 11 further utilizes the temperature acquisition component 13 to obtain the first actual temperature information corresponding to the abnormal film thickness region. Subsequently, the controller 11 compares this first actual temperature information with the preset stage 3 temperature to calculate the temperature deviation. Since the temperature of the substrate to be deposited is positively correlated with the film deposition rate—that is, areas with excessively thin films are caused by excessively low substrate temperatures, while areas with excessively thick films are caused by excessively high substrate temperatures—based on this discrepancy, the controller 11 sends control commands to the heating unit 9 and the flow regulation unit 10 corresponding to the abnormal film thickness areas to adjust the heating amount and intake amount of the inert gas. For example, if the temperature of the abnormal film thickness area is too low (the film thickness information in this area is less than that in other areas), the controller 11 may instruct the heating unit 9 to increase the heating power and / or instruct the flow regulation unit 10 to reduce the intake amount of the inert gas, thereby increasing the local temperature of this area and improving the film deposition rate in this area. Conversely, if the temperature is too high, the opposite adjustment is performed. The ingenuity of this embodiment lies in its full utilization of the structure of the stage 3, which is divided into multiple concentrically distributed temperature control areas, enabling regional and precise control of the inert gas heating amount and intake amount. This local, dynamic temperature adjustment mechanism can effectively compensate for temperature unevenness caused by equipment wear or process fluctuations, thereby ensuring that the film deposition thickness on the entire substrate surface remains highly consistent. Through this closed-loop feedback control, the system can respond to and correct process deviations in real time, significantly improving the stability of the atomic layer deposition process and the uniformity of the thin film.

[0087] In some preferred embodiments, the process of controlling the heating amount and intake amount of the inert gas by the heating unit 9 and the flow regulating unit 10 corresponding to the abnormal film thickness region based on the deviation between the first actual temperature information and the preset stage 3 temperature includes:

[0088] A1. Analyze whether the inert gas intake volume corresponding to the abnormal film thickness region exceeds the first preset intake volume range. If yes, proceed to step A4; otherwise, proceed to step A2.

[0089] A2. Adjust the inert gas intake by adjusting the step size control flow regulating unit 10 corresponding to the abnormal film thickness area according to the first preset intake volume.

[0090] A3. Analyze whether the first actual temperature information reaches the preset stage 3 temperature and whether the inert gas intake corresponding to the abnormal film thickness area does not exceed the first preset intake range. If yes, end; otherwise, return to step A1.

[0091] A4. Analyze whether the heating amount of the inert gas corresponding to the abnormal film thickness area exceeds the first preset heating amount range. If yes, generate an alarm message; otherwise, proceed to step A5.

[0092] A5. Adjust the heating amount of inert gas in the heating unit 9 corresponding to the abnormal film thickness area according to the first preset heating amount and the step size adjustment control.

[0093] A6. Analyze whether the first actual temperature information reaches the preset stage 3 temperature and whether the heating amount of the inert gas corresponding to the abnormal film thickness area does not exceed the first preset heating amount range. If yes, then end; otherwise, return to step A4.

[0094] First, the system analyzes whether the inert gas intake volume corresponding to the abnormal film thickness region exceeds the first preset intake volume range. This step aims to check the safety and effectiveness of the current intake volume before adjusting the inert gas intake volume. By comparing the real-time inert gas intake volume corresponding to the abnormal film thickness region with the preset first intake volume range, it can be determined whether the current intake volume is within a reasonable and safe range. Specifically, if the inert gas intake volume exceeds the first preset intake volume range, it means that the adjustment of the inert gas intake volume has reached its limit. At this time, different handling strategies need to be adopted, such as adjusting the heating amount or issuing an alarm. It should be understood that the first preset intake volume range in this embodiment can be preset according to process requirements, equipment performance, or safety specifications, for example, determined through experimental calibration or empirical values. If the inert gas intake does not exceed the first preset intake volume range, the flow regulation unit 10 corresponding to the abnormal film thickness region is controlled to adjust the inert gas intake volume according to the first preset intake volume adjustment step size. This step is used to finely adjust the intake volume when the inert gas intake volume does not exceed the safe range. In this embodiment, the first preset intake volume adjustment step size is a preset small-amplitude intake volume change, for example, it can be set to several times the minimum adjustable increment of the flow regulation unit 10. The controller 11 sends instructions to the flow regulation unit 10 to gradually increase or decrease the inert gas intake volume according to this step size, so as to gradually approach the target temperature. This step-by-step adjustment method helps to avoid process fluctuations caused by large-amplitude adjustments and ensures the stability and accuracy of the adjustment process. Subsequently, the system analyzes whether the first actual temperature information has reached the preset stage 3 temperature and whether the inert gas intake volume corresponding to the abnormal film thickness area does not exceed the first preset intake volume range. This step is the termination condition judgment of the intake volume adjustment cycle. Specifically, the controller 11 continuously monitors the first actual temperature information obtained by the temperature acquisition component 13 and compares it with the preset stage 3 temperature to determine whether the target temperature (preset stage 3 temperature) has been reached. At the same time, the system reconfirms whether the inert gas intake volume is still within the first preset intake volume range to ensure the compliance of the adjustment process. If both conditions are met, the intake volume adjustment is considered to have been successfully completed and the current adjustment cycle can be ended; otherwise, the system returns to the intake volume analysis step to continue adjustment.

[0095] If, during the above-mentioned intake volume analysis step, the intake volume of the inert gas corresponding to the abnormal film thickness region exceeds the first preset intake volume range, then the analysis checks whether the heating amount of the inert gas corresponding to the abnormal film thickness region exceeds the first preset heating amount range. When the inert gas intake volume adjustment reaches its limit (exceeding the first preset intake volume range), this step serves as the entry point for a backup adjustment strategy, used to assess the adjustment space of the inert gas heating amount. This embodiment compares the real-time heating amount of the inert gas corresponding to the abnormal film thickness region with the preset first preset heating amount range to determine whether the current heating amount is within a reasonable and safe range. Specifically, if the heating amount exceeds this range, it means that the equipment has reached its heating capacity limit, and an alarm message needs to be generated to prompt the operator to intervene. The first preset heating amount range in this embodiment can be preset according to the rated power of the heating unit 9, the upper limit of the process temperature, or safety specifications. If the heating amount does not exceed this range, the heating unit 9 corresponding to the abnormal film thickness region is controlled to adjust the heating amount of the inert gas according to the first preset heating amount adjustment step size. This step is used to finely adjust the heating amount when the inert gas heating amount does not exceed the safe range. The first preset heating amount adjustment step size in this embodiment is a preset, small-amplitude heating amount change, for example, it can be set to several times the minimum adjustable power of the heating unit 9. The controller 11 sends instructions to the heating unit 9 to gradually increase or decrease the heating amount of the inert gas according to this step size, so as to gradually approach the target temperature. This step-by-step adjustment method also helps to avoid temperature shocks caused by large-amplitude adjustments, ensuring the smoothness and accuracy of the adjustment process. Subsequently, it analyzes whether the first actual temperature information has reached the preset stage 3 temperature and whether the heating amount of the inert gas corresponding to the abnormal film thickness area does not exceed the first preset heating amount range. This step is the termination condition judgment of the heating amount adjustment cycle. The controller 11 continuously monitors the first actual temperature information obtained by the temperature acquisition component 13 and compares it with the preset stage 3 temperature to determine whether the target temperature has been reached. At the same time, it reconfirms whether the heating amount of the inert gas is still within the first preset heating amount range to ensure the compliance of the adjustment process. If both conditions are met, the heating amount adjustment is considered to have been successfully completed and the current adjustment cycle can be ended; otherwise, it is necessary to return to the heating amount analysis step to continue the adjustment as appropriate.

[0096] This embodiment uses controller 11 to intelligently control the heating unit 9 and flow regulation unit 10 corresponding to the abnormal film thickness region, thereby adjusting the heating amount and intake amount of the inert gas. Specifically, controller 11 first analyzes whether the intake amount of the inert gas corresponding to the abnormal film thickness region exceeds the first preset intake amount range. This initial judgment is crucial, as it ensures the safety and effectiveness of subsequent adjustment operations. If the intake amount does not exceed the range, controller 11 adjusts the step size according to the first preset intake amount, and fine-tunes the intake amount of the inert gas through flow regulation unit 10. This step-by-step adjustment method can avoid process instability caused by sudden parameter changes and ensure the stability of the adjustment process. Subsequently, controller 11 continuously monitors whether the first actual temperature information reaches the preset stage 3 temperature and reconfirms whether the intake amount is still within the safe range. If the conditions are met, the adjustment ends, forming an effective closed-loop feedback mechanism to ensure the accurate realization of the target temperature. However, when the intake amount of the inert gas exceeds the first preset intake amount range, controller 11 will then analyze whether the heating amount of the inert gas corresponding to the abnormal film thickness region exceeds the first preset heating amount range. This switching mechanism demonstrates the robustness of the solution, automatically switching to another adjustment method when one reaches its limit. If the heating amount also exceeds the range, the controller 11 will immediately generate an alarm message to promptly notify the operator, thereby effectively preventing equipment damage or process failure. If the heating amount does not exceed the range, the controller 11 adjusts the step size according to the first preset heating amount, fine-tuning the heating amount of the inert gas through the heating unit 9. Similar to the intake volume adjustment, this step-by-step heating amount adjustment also ensures the stability of temperature changes. Finally, the controller 11 will again determine whether the first actual temperature information has reached the preset stage 3 temperature and confirm whether the heating amount is still within the safe range. If the conditions are met, the adjustment ends, forming a closed-loop feedback, ensuring precise temperature control even in the heating amount adjustment mode. This solution works in conjunction with the ellipsometer 12 and temperature acquisition component 13 in the aforementioned atomic layer deposition system. The ellipsometer 12 provides film thickness information to locate abnormal film thickness areas, and the temperature acquisition component 13 provides the first actual temperature information as the basis for adjustment. By employing this regional, phased, and step-by-step adjustment strategy, combined with a preset range judgment and alarm mechanism, the system can efficiently and stably adjust the temperature of abnormal film thickness areas to the preset stage 3 temperature, thereby effectively solving the problem of uneven film thickness caused by temperature inconsistency and significantly improving the stability and yield of the atomic layer deposition process.

[0097] In some preferred embodiments, step A4 includes:

[0098] A41. Analyze whether the heating amount of the inert gas corresponding to the abnormal film thickness region exceeds the first preset heating amount range. If yes, proceed to step A42; otherwise, proceed to step A5.

[0099] A42. Analyze whether the inert gas intake volume of all temperature control zones, except for the abnormal film thickness zone, exceeds the first preset intake volume range. If yes, proceed to step A48; otherwise, proceed to step A43.

[0100] A43. Analyze whether the film thickness information of the abnormal film thickness area is greater than the film thickness information of all temperature control areas except the abnormal film thickness area. If yes, proceed to step A44; otherwise, proceed to step A46.

[0101] A44. According to the first preset intake volume adjustment step size control, the flow regulation unit 10 corresponding to all temperature control areas except the film thickness abnormal area reduces the intake volume of inert gas.

[0102] A45. Analyze whether the second actual temperature information corresponding to all temperature control areas except the film thickness abnormal area is greater than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas except the film thickness abnormal area is greater than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A42.

[0103] A46. According to the first preset intake volume adjustment step size control, the flow regulation unit 10 corresponding to all temperature control areas except the film thickness abnormal area increases the intake volume of inert gas.

[0104] A47. Analyze whether the second actual temperature information corresponding to all temperature control areas other than the film thickness abnormal area is less than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas other than the film thickness abnormal area is less than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A42.

[0105] A48. Analyze whether the heating amount of the inert gas in all temperature control areas except for the abnormal film thickness area exceeds the first preset heating amount range. If yes, generate an alarm message; otherwise, execute step A49.

[0106] A49. Analyze whether the film thickness information of the abnormal film thickness area is greater than the film thickness information of all temperature control areas other than the abnormal film thickness area. If yes, proceed to step A50; otherwise, proceed to step A52.

[0107] A50. Adjust the step size according to the first preset heating amount to control the heating unit 9 corresponding to all temperature control areas except for the abnormal film thickness area to increase the heating amount of inert gas.

[0108] A51. Analyze whether the second actual temperature information corresponding to all temperature control areas other than the film thickness abnormal area is greater than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas other than the film thickness abnormal area is greater than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A48.

[0109] A52. Adjust the step size according to the first preset heating amount to control the heating unit 9 corresponding to all temperature control areas except for the film thickness abnormal area to reduce the heating amount of inert gas.

[0110] A53. Analyze whether the second actual temperature information corresponding to all temperature control areas other than the film thickness abnormal area is less than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas other than the film thickness abnormal area is less than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A48.

[0111] Step A42 assesses whether there is still room for adjustment in the inert gas intake of all temperature-controlled areas except for the abnormal film thickness region. Its purpose is to ensure that when attempting to maintain film thickness consistency between the abnormal film thickness region and other regions by adjusting the film deposition rate in other regions, the parameters of other regions remain within a controllable range. Step A43 compares the film thickness information of the abnormal film thickness region with that of all temperature-controlled areas to determine whether the deposition rate of the abnormal film thickness region is too fast or too slow. Its purpose is to provide directional guidance for subsequent adjustments to the inert gas intake of other regions. Step A44 aims to indirectly affect the temperature of these regions by reducing the inert gas intake of all temperature-controlled areas except for the abnormal film thickness region, in order to balance the overall film thickness uniformity. Its purpose is to achieve balance by increasing the deposition rate of other regions when the film thickness in the abnormal film thickness region is too large. Step A45 verifies whether, after adjusting the inert gas intake, the second actual temperature information corresponding to all temperature-controlled areas (excluding areas with abnormal film thickness) is greater than the first actual temperature information corresponding to the areas with abnormal film thickness, i.e., whether the overall deposition rate can be made more uniform. Its purpose is to determine whether the current adjustment is effective and whether to continue iterative adjustments. Step A46 aims to indirectly affect the temperature or deposition environment of all temperature-controlled areas (excluding areas with abnormal film thickness) by increasing the inert gas intake, in order to balance the overall film thickness uniformity. Its purpose is to achieve balance by reducing the deposition rate of other areas when the film thickness in areas with abnormal film thickness is too small. Step A47 verifies whether, after adjusting the inert gas intake, the second actual temperature information corresponding to all temperature-controlled areas (excluding areas with abnormal film thickness) is less than the first actual temperature information corresponding to the areas with abnormal film thickness, i.e., whether the overall deposition rate can be made more uniform. Its purpose is to determine whether the current adjustment is effective and whether to continue iterative adjustments. Step A48 assesses whether there is still room for adjustment in the heating amount of inert gas in all temperature-controlled areas except for the abnormal film thickness region. Its purpose is to avoid further ineffective or harmful adjustments to parameters that have reached their limits and to issue timely warnings. Step A49 compares the film thickness information in the abnormal film thickness region with that in all other temperature-controlled areas to determine whether the deposition rate in the abnormal film thickness region is too fast or too slow. Its purpose is to provide directional guidance for subsequent adjustments to the inert gas heating amount in other areas. Step A50 aims to indirectly affect the temperature or deposition environment of all temperature-controlled areas except for the abnormal film thickness region by increasing the heating amount of inert gas in these areas, in order to balance the overall film thickness uniformity. Its purpose is to achieve balance by increasing the deposition rate in other areas when the film thickness in the abnormal film thickness region is too large.Step A51 verifies whether, after adjusting the inert gas heating amount, the second actual temperature information corresponding to all temperature-controlled areas (excluding areas with abnormal film thickness) is greater than the first actual temperature information corresponding to the areas with abnormal film thickness, i.e., whether the overall deposition rate can be made more uniform. Its purpose is to determine whether the current adjustment is effective and whether to continue iterative adjustments. Step A52 aims to indirectly affect the temperature or deposition environment of all temperature-controlled areas (excluding areas with abnormal film thickness) by reducing the inert gas heating amount, in order to balance the overall film thickness uniformity. Its purpose is to achieve balance by reducing the deposition rate of other areas when the film thickness in areas with abnormal film thickness is too small. Step A53 verifies whether, after adjusting the inert gas heating amount, the second actual temperature information corresponding to all temperature-controlled areas (excluding areas with abnormal film thickness) is less than the first actual temperature information corresponding to the areas with abnormal film thickness, i.e., whether the overall deposition rate can be made more uniform. Its purpose is to determine whether the current adjustment is effective and whether to continue iterative adjustments.

[0112] This embodiment addresses the problem of ineffective film uniformity when the inert gas heating or intake volume in areas with abnormal film thickness reaches its adjustment limit by introducing a layered, iterative adjustment strategy. Specifically, when the controller 11 detects non-uniform film thickness on the substrate to be deposited and locates the abnormal film thickness area, it first attempts to directly adjust the heating unit 9 and flow regulation unit 10 corresponding to that area based on the deviation between the first actual temperature information of that area and the preset stage 3 temperature. However, when the inert gas heating in the abnormal film thickness area exceeds the first preset heating range, the system is no longer limited to directly adjusting that abnormal area. Instead, it analyzes whether there is still room for adjustment in the inert gas intake and heating in all temperature-controlled areas other than the abnormal film thickness area. Based on the film thickness information collected by the ellipsometer 12, the controller 11 compares the film thickness difference between the abnormal film thickness area and other temperature-controlled areas to determine whether it is necessary to increase or decrease the inert gas intake or heating in other temperature-controlled areas. For example, if the film thickness in an abnormal film thickness region is greater than that in other regions, the inert gas intake in other regions will be reduced or the inert gas heating in other regions will be increased to increase the film deposition rate in those regions. Conversely, if the film thickness in an abnormal film thickness region is less than that in other regions, the inert gas intake in other regions will be increased or the inert gas heating in other regions will be reduced to decrease the film deposition rate in those regions. After each adjustment, the system uses the temperature acquisition component 13 to obtain the second actual temperature information of other temperature control regions and compares it with the first actual temperature information of the abnormal film thickness region to evaluate the adjustment effect and decide whether to continue iterative adjustment. This strategy fully utilizes the characteristic that the stage 3 is divided into multiple concentrically distributed temperature control regions, as well as the real-time monitoring capabilities of the ellipsometer 12 and the temperature acquisition component 13, so that even when local adjustment is limited, the temperature uniformity of the entire stage 3 can still be restored through global coordinated adjustment, thereby ensuring the uniformity of film deposition. When the parameters of all temperature control regions cannot be adjusted, the system will generate an alarm message to promptly remind the operator to intervene.

[0113] In some preferred embodiments, the precalibration process for the precalibrated parameter combination includes:

[0114] B1. Adjust the distance between the stage 3 and the process gas inlet 2, the process gas intake, the heating amount of the inert gas, and the inert gas intake to the preset initial values, and use the ellipsometry 12 to record the first film formation rate information at this time.

[0115] B2. Analyze whether the distance between the stage 3 and the process gas inlet 2 exceeds the preset distance range. If yes, proceed to step B4; otherwise, proceed to step B3.

[0116] B3. Adjust the step length control lifting drive mechanism 5 according to the preset spacing to adjust the distance between the stage 3 and the process gas inlet 2, and use the ellipsometry 12 to record the first film formation speed information at this time, and then return to step B2.

[0117] B4. The distance between the stage 3 and the process gas inlet 2 corresponding to the maximum value of the first film formation speed information is taken as the preset distance, and the lifting drive mechanism 5 is controlled to adjust the distance between the stage 3 and the process gas inlet 2 to the preset distance.

[0118] B5. Analyze whether the intake volume of the process gas exceeds the second preset intake volume range. If yes, proceed to step B7; otherwise, proceed to step B6.

[0119] B6. Adjust the process gas intake of the process gas supply component 6 according to the second preset intake volume, and use the ellipsometry 12 to record the second film formation speed information at this time, and then return to step B5.

[0120] B7. Take the maximum value of the second film formation speed information as the intake amount of the process gas as the first preset intake amount, and control the process gas supply component 6 to adjust the intake amount of the process gas to the first preset intake amount.

[0121] B8. Analyze whether the intake volume of the inert gas exceeds the third preset intake volume range. If yes, proceed to step B10; otherwise, proceed to step B9.

[0122] B9. Adjust the inert gas intake according to the third preset intake volume adjustment step size control flow adjustment unit 10, and use the ellipsometry 12 to record the third film formation rate information at this time, and then return to step B8.

[0123] B10. The inert gas intake corresponding to the maximum value of the third film formation rate information is used as the second preset intake volume, and the flow regulation unit 10 is controlled to adjust the inert gas intake volume to the second preset intake volume.

[0124] B11. Analyze whether the heating amount of the inert gas exceeds the second preset heating amount range. If yes, proceed to step B13; otherwise, proceed to step B12.

[0125] B12. Adjust the heating amount of the inert gas by adjusting the step size control heating unit 9 according to the second preset heating amount, and record the fourth film formation rate information at this time using the ellipsometry 12, and then return to step B11.

[0126] B13. Take the heating amount of the inert gas corresponding to the maximum value of the fourth film formation rate information as the preset heating amount, and then combine the preset heating amount, the first preset air intake amount, the preset spacing and the second preset air intake amount into a preset calibration parameter combination.

[0127] The preset initial value in this embodiment refers to a starting operating point set for each process parameter before parameter optimization begins. This initial value can be determined based on empirical data, theoretical calculations, or preliminary experimental results. For example, it can be set to a typical value recommended by the equipment manufacturer, or a parameter that can achieve basic film formation under specific process conditions. Its function is to provide a benchmark for subsequent iterative optimization, ensuring that the optimization process starts from a known and relatively stable state. The preset spacing range, second preset air intake range, third preset air intake range, and second preset heating range in this embodiment refer to adjustable ranges set for each process parameter. The setting of these ranges aims to limit the adjustment space of the parameters, avoid parameter adjustments exceeding the physical limitations of the equipment or the process window, thereby ensuring safe equipment operation and the effectiveness of thin film deposition. The preset spacing adjustment step size, the second preset air intake adjustment step size, the third preset air intake adjustment step size, and the second preset heating amount adjustment step size in this embodiment refer to the amount that is increased or decreased each time the parameters are adjusted during the parameter optimization process. The choice of these step sizes affects the efficiency and accuracy of parameter optimization. Smaller step sizes can achieve finer optimization, but may increase optimization time; larger step sizes can speed up optimization, but may miss the optimal solution. It should be understood that the step size can be set based on experience or dynamically adjusted according to the optimization algorithm. The first film deposition rate information, the second film deposition rate information, the third film deposition rate information, and the fourth film deposition rate information in this embodiment refer to the thin film deposition rate data obtained by real-time or near-real-time measurement using the ellipsometry 12 at different parameter adjustment stages. This information is the core basis for evaluating the merits of the current parameter combination. By comparing the film deposition rate under different parameters, the parameter value that maximizes the film deposition rate can be identified. The film deposition rate information can be obtained by measuring the rate of change of the film thickness over time, for example, the film thickness deposited in a certain time divided by that time.

[0128] This embodiment addresses the lack of systematic optimization methods in traditional atomic layer deposition systems when acquiring process parameters through a systematic pre-calibration process. The process first adjusts the distance between the stage 3 and the process gas inlet 2, the process gas intake rate, the inert gas heating rate, and the inert gas intake rate to preset initial values, providing a stable starting point for subsequent parameter optimization. Then, by iteratively adjusting the distance between the stage 3 and the process gas inlet 2 and recording the film deposition rate information using an ellipsometry 12, a preset distance maximizing the film deposition rate is found. Based on this, the process gas intake rate is further iteratively adjusted to find a first preset intake rate maximizing the film deposition rate. Next, the inert gas intake rate is iteratively adjusted to determine a second preset intake rate maximizing the film deposition rate. Finally, the inert gas heating rate is iteratively adjusted to find a preset heating rate maximizing the film deposition rate. This step-by-step iterative optimization ensures that each key parameter operates in its optimal state, and these optimal parameters are combined into a pre-calibrated parameter combination. This method not only considers the influence of individual parameters on the film formation rate, but more importantly, it achieves synergistic optimization among parameters to a certain extent by fixing the optimal value of one parameter after determining it, and then optimizing the next parameter. This avoids the problem of poor optimization results caused by mutual interference between parameters in traditional methods. Furthermore, combined with the ellipsometry 12 in the aforementioned atomic layer deposition system, film formation rate information can be obtained in real time and accurately, providing reliable data support for parameter optimization and making the entire calibration process more scientific and efficient.

[0129] In some preferred embodiments, multiple vents 4 are evenly distributed within the same temperature control zone. Each temperature control zone can be considered an independent temperature control unit, and its internal temperature can be finely adjusted by the heating amount and intake volume of the inert gas. Within each temperature control zone, multiple vents 4 are provided. These vents 4 are channels through which the inert gas enters the reaction chamber 1 from the intake pipe 8 and contacts the surface of the stage 3. Their function is to supply inert gas to the surface of the stage 3. The uniform distribution in this embodiment means that the positions of the multiple vents 4 are evenly arranged within the same temperature control zone, so that the inert gas can act uniformly on all parts of the temperature control zone with approximately the same flow rate and coverage. This distribution ensures that the inert gas forms a uniform airflow field within the temperature control zone, thereby avoiding local overheating or overcooling and achieving precise and consistent temperature control.

[0130] This embodiment achieves precise and uniform control of the surface temperature of the stage 3 by dividing the stage 3 into multiple concentrically distributed temperature-controlled zones and ensuring that multiple vents 4 within each temperature-controlled zone are evenly distributed. During atomic layer deposition, the inert gas supply component 7 delivers inert gas to the vents 4 on the stage 3 through the gas inlet pipe 8. Because the vents 4 are evenly distributed in each temperature-controlled zone, the inert gas can enter the reaction chamber 1 in a balanced manner and flow evenly across the surface of the substrate to be deposited in that temperature-controlled zone. Therefore, this embodiment can maintain a consistent temperature field throughout the temperature-controlled zone through this uniform gas distribution, effectively avoiding local temperature differences. When the controller 11 controls the heating amount and gas intake of the inert gas according to the pre-calibrated parameter combination, the evenly distributed vents 4 can evenly deliver the adjusted inert gas to the temperature-controlled zone, ensuring that the temperature regulation effect remains highly consistent within the zone. This design not only improves the temperature uniformity within a single temperature control zone, but also further optimizes the temperature transition between different temperature control zones, thereby ensuring the temperature uniformity of the entire substrate surface to be deposited and providing a stable process environment for the deposition of high-quality thin films.

[0131] In some preferred embodiments, the reaction chamber 1 is further provided with an exhaust port 14, and the process gas inlet 2 and the exhaust port 14 are respectively located on both sides of the stage 3. In this embodiment, the exhaust port 14 serves as a channel for discharging waste gas, unreacted precursors, and reaction byproducts from the reaction chamber 1. Its function is to maintain the cleanliness of the chamber, prevent the accumulation of byproducts, and ensure the direction of gas flow. In this embodiment, the exhaust port 14 can be one or more holes connected by a vacuum pump to form negative pressure suction. The process gas inlet 2 and the exhaust port 14 are respectively located on both sides of the stage 3 to establish a clear gas flow path, thereby ensuring that the gas flows uniformly across the surface of the stage 3.

[0132] This embodiment establishes a clear and controlled gas flow path in the atomic layer deposition system by setting an exhaust port 14 on the reaction chamber 1 and positioning the process gas inlet 2 and the exhaust port 14 on opposite sides of the stage 3. When the process gas enters the reaction chamber 1 through the process gas inlet 2, it is guided across the surface of the stage 3 to react with the substrate. Subsequently, unreacted gas and reaction byproducts are effectively extracted by the exhaust port 14. This arrangement ensures unidirectional gas flow within the stage 3 region, avoiding gas stagnation and backflow within the chamber, thus significantly reducing the accumulation of reaction byproducts. Due to the more uniform gas flow, the heat distribution on the surface of the stage 3 is also optimized, helping to maintain temperature uniformity during the deposition process. This design, in conjunction with the basic components of the atomic layer deposition system such as the reaction chamber 1, stage 3, and process gas supply assembly 6, enables the precursor gas to efficiently reach the substrate surface and participate in the reaction, while simultaneously removing waste gas in a timely manner, thereby providing a stable process environment for the uniform deposition of high-quality thin films.

[0133] In some preferred embodiments, the process gas inlet 2 is located directly above the center of the stage 3, and there are multiple exhaust gas outlets 14, which are symmetrically arranged with the center of the stage 3 as the center of symmetry. In this embodiment, the multiple exhaust gas outlets 14 are symmetrically arranged with the center of the stage 3 as the center of symmetry, meaning that the multiple outlets are arranged around the stage 3 in a way that they exhibit geometric symmetry with respect to the center point of the stage 3. This symmetrical arrangement ensures that the gas in the reaction chamber 1 can be uniformly discharged, avoiding gas stagnation or uneven flow rates in local areas, thereby maintaining the uniformity of the deposition process.

[0134] This embodiment ensures that the process gas enters the reaction chamber 1 uniformly from the central region by placing the process gas inlet 2 directly above the center of the stage 3. This central inlet promotes the formation of a radially uniform diffusion flow field of the process gas on the surface of the stage 3, thereby avoiding uneven airflow caused by the inlet position deviating from the center. Simultaneously, by setting multiple exhaust ports 14 symmetrically about the center of the stage 3, it is ensured that the gas in the reaction chamber 1 can be discharged uniformly and efficiently. This symmetrical exhaust layout effectively prevents gas stagnation in local areas and the accumulation of reaction byproducts, maintaining the uniformity of pressure inside the chamber. In the atomic layer deposition system, the reaction chamber 1 is provided with exhaust ports 14, and the process gas inlet 2 and exhaust ports 14 are respectively located on both sides of the stage 3. Based on this, the scheme of this application further optimizes the gas inlet and outlet layout, so that the process gas is supplied vertically downward from the top center, while multiple symmetrically distributed exhaust ports 14 uniformly extract the gas. This synergistic effect makes the gas flow field in reaction chamber 1 highly symmetrical and uniform, ensuring uniform coverage of the reaction precursor on the entire substrate surface and effective removal of reaction byproducts, thereby significantly improving the uniformity of film thickness on the substrate to be deposited and enhancing the stability of the atomic layer deposition process.

[0135] As can be seen from the above, the atomic layer deposition system provided in this application achieves comprehensive optimization of the thin film deposition process through the coordinated control of multiple key parameters. This dynamic and precise control capability enables this application to overcome the shortcomings of traditional equipment in terms of thin film uniformity, temperature control, and by-product management. Therefore, this application can effectively improve the application effect and product yield of atomic layer deposition technology, and provide a more reliable solution for high-end semiconductor manufacturing.

[0136] Secondly, such as Figure 5 As shown, this application also provides an atomic layer deposition method, applied to the atomic layer deposition system provided in the first aspect above. The atomic layer deposition method includes the following steps:

[0137] S1. Obtain the corresponding pre-calibrated parameter combination based on the type of process gas currently supplied and the current pressure of reaction chamber 1. The pre-calibrated parameter combination includes preset heating amount, first preset air intake amount, preset spacing and second preset air intake amount.

[0138] S2. The heating unit 9 and the flow regulating unit 10 are controlled to adjust the heating amount and the inert gas intake according to the preset heating amount and the second preset intake amount. The process gas supply component 6 is controlled to adjust the intake amount of the process gas according to the first preset intake amount. The lifting drive mechanism 5 is controlled to adjust the distance between the platform 3 and the process gas inlet 2 according to the preset distance.

[0139] The atomic layer deposition method provided in this application is applied to the atomic layer deposition system provided in the first aspect above. The principle of the atomic layer deposition method provided in this embodiment is the same as that of the atomic layer deposition system provided in the first aspect above, and will not be discussed in detail here.

[0140] As can be seen from the above, the atomic layer deposition system and method provided in this application achieve comprehensive optimization of the thin film deposition process through the coordinated control of multiple key parameters. This dynamic and precise control capability enables this application to overcome the defects of traditional equipment in terms of thin film uniformity, temperature control and by-product management. Therefore, this application can effectively improve the application effect and product yield of atomic layer deposition technology, and provide a more reliable solution for high-end semiconductor manufacturing.

[0141] In the embodiments provided in this application, it should be understood that relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0142] The above are merely embodiments of this application and are not intended to limit the scope of protection of this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. An atomic layer deposition system, characterized in that, The atomic layer deposition system includes: The reaction chamber has a process gas inlet at its top; A stage is disposed within the reaction chamber and has a vent. A lifting drive mechanism is connected to the platform. A process gas supply assembly is connected to the process gas inlet. An inert gas supply assembly is connected to the vent via an inlet pipe, and the inlet pipe is equipped with a heating unit and a flow regulation unit. The controller is configured to acquire a corresponding pre-calibrated parameter combination based on the type of process gas currently supplied and the current pressure of the reaction chamber. The pre-calibrated parameter combination includes a preset heating amount, a first preset air intake amount, a preset distance, and a second preset air intake amount. The controller is also configured to control the heating unit and the flow regulating unit to adjust the heating amount and air intake amount of the inert gas based on the preset heating amount and the second preset air intake amount, control the process gas supply assembly to adjust the air intake amount of the process gas based on the first preset air intake amount, and control the lifting drive mechanism to adjust the distance between the platform and the process gas inlet based on the preset distance.

2. The atomic layer deposition system according to claim 1, characterized in that, The stage is divided into multiple concentrically distributed temperature control zones. Each temperature control zone is provided with multiple air vents, and each air vent in the temperature control zone is connected to an inert gas supply component through at least one air inlet pipe.

3. The atomic layer deposition system according to claim 2, characterized in that, The atomic layer deposition system further includes an ellipsometer and a temperature acquisition component disposed on the reaction chamber. The ellipsometer is used to acquire film thickness information corresponding to each of the temperature control regions. The controller is also used to analyze whether the film thickness of the substrate to be deposited is uniform based on all the film thickness information. When the film thickness of the substrate to be deposited is not uniform, the controller is also used to locate the film thickness abnormal region based on all the film thickness information, and use the temperature acquisition component to acquire the first actual temperature information corresponding to the film thickness abnormal region. Then, based on the deviation between the first actual temperature information and the preset stage temperature, the controller controls the heating unit and flow regulation unit corresponding to the film thickness abnormal region to adjust the heating amount and intake amount of inert gas.

4. The atomic layer deposition system according to claim 3, characterized in that, The step of controlling the heating amount and intake amount of inert gas in the heating unit and flow regulation unit corresponding to the abnormal film thickness region based on the deviation between the first actual temperature information and the preset stage temperature includes: A1. Analyze whether the inert gas intake volume corresponding to the abnormal film thickness region exceeds the first preset intake volume range. If yes, proceed to step A4; otherwise, proceed to step A2. A2. Adjust the inert gas intake volume according to the first preset intake volume adjustment step size control flow regulation unit corresponding to the abnormal film thickness area. A3. Analyze whether the first actual temperature information reaches the preset stage temperature and whether the inert gas intake corresponding to the abnormal film thickness area does not exceed the first preset intake range. If yes, end; otherwise, return to step A1. A4. Analyze whether the heating amount of the inert gas corresponding to the abnormal film thickness area exceeds the first preset heating amount range. If yes, generate an alarm message; otherwise, proceed to step A5. A5. Adjust the heating amount of inert gas in the heating unit corresponding to the abnormal film thickness area according to the first preset heating amount and the step size adjustment control. A6. Analyze whether the first actual temperature information reaches the preset stage temperature and whether the heating amount of the inert gas corresponding to the abnormal film thickness area does not exceed the first preset heating amount range. If yes, then end; otherwise, return to step A4.

5. The atomic layer deposition system according to claim 4, characterized in that, Step A4 includes: A41. Analyze whether the heating amount of the inert gas corresponding to the abnormal film thickness region exceeds the first preset heating amount range. If yes, proceed to step A42; otherwise, proceed to step A5. A42. Analyze whether the inert gas intake volume of all temperature control areas except for the abnormal film thickness area exceeds the first preset intake volume range. If yes, proceed to step A48; otherwise, proceed to step A43. A43. Analyze whether the film thickness information of the abnormal film thickness region is greater than the film thickness information of all temperature control regions except the abnormal film thickness region. If yes, proceed to step A44; otherwise, proceed to step A46. A44. According to the first preset air intake volume adjustment step size control, the flow regulation unit corresponding to all temperature control areas except the film thickness abnormal area reduces the air intake volume of the inert gas. A45. Analyze whether the second actual temperature information corresponding to all temperature control areas other than the film thickness abnormal area is greater than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas other than the film thickness abnormal area is greater than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A42. A46. According to the first preset air intake volume adjustment step size control, the flow regulation unit corresponding to all temperature control areas except the film thickness abnormal area increases the air intake volume of the inert gas. A47. Analyze whether the second actual temperature information corresponding to all temperature control areas other than the film thickness abnormal area is less than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas other than the film thickness abnormal area is less than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A42. A48. Analyze whether the heating amount of the inert gas corresponding to all temperature control areas except for the abnormal film thickness area exceeds the first preset heating amount range. If yes, generate an alarm message; otherwise, execute step A49. A49. Analyze whether the film thickness information of the abnormal film thickness region is greater than the film thickness information of all temperature control regions except the abnormal film thickness region. If yes, proceed to step A50; otherwise, proceed to step A52. A50. Adjust the step size according to the first preset heating amount to control the heating unit corresponding to all temperature control areas except for the abnormal film thickness area to increase the heating amount of the inert gas. A51. Analyze whether the second actual temperature information corresponding to all temperature control areas except the film thickness abnormal area is greater than the first actual temperature information corresponding to the film thickness abnormal area. If yes, it is considered that the film deposition rate of all temperature control areas except the film thickness abnormal area is greater than the film deposition rate of the film thickness abnormal area, and the adjustment ends. If no, return to step A48. A52. According to the first preset heating amount, adjust the step size to control the heating units corresponding to all temperature control areas except for the abnormal film thickness area to reduce the heating amount of the inert gas. A53. Analyze whether the second actual temperature information corresponding to all temperature control regions except the film thickness abnormal region is less than the first actual temperature information corresponding to the film thickness abnormal region. If yes, it is considered that the film deposition rate of all temperature control regions except the film thickness abnormal region is less than the film deposition rate of the film thickness abnormal region, and the adjustment ends. If no, return to step A48.

6. The atomic layer deposition system according to claim 3, characterized in that, The pre-calibration process for the pre-calibrated parameter combination includes: B1. Adjust the distance between the stage and the process gas inlet, the amount of process gas entering the stage, the amount of heating of the inert gas, and the amount of inert gas entering the stage to preset initial values, and use the ellipsometry to record the first film formation rate information at this time. B2. Analyze whether the distance between the stage and the process gas inlet exceeds the preset distance range. If yes, proceed to step B4; otherwise, proceed to step B3. B3. Adjust the step size control of the lifting drive mechanism according to the preset spacing to adjust the distance between the stage and the process gas inlet, and use the ellipsometry to record the first film formation speed information at this time, and then return to step B2; B4. The distance between the stage and the process gas inlet corresponding to the maximum value of the first film formation speed information is taken as the preset distance, and the lifting drive mechanism is controlled to adjust the distance between the stage and the process gas inlet to the preset distance. B5. Analyze whether the intake volume of the process gas exceeds the second preset intake volume range. If yes, proceed to step B7; otherwise, proceed to step B6. B6. Adjust the process gas supply component according to the second preset air intake volume adjustment step size to adjust the air intake volume of the process gas, and use the ellipsometry to record the second film formation speed information at this time, and then return to step B5. B7. Take the intake amount of the process gas corresponding to the maximum value of the second film formation speed information as the first preset intake amount, and control the process gas supply component to increase the intake amount of the process gas to the first preset intake amount. B8. Analyze whether the intake volume of the inert gas exceeds the third preset intake volume range. If yes, proceed to step B10; otherwise, proceed to step B9. B9. Adjust the inert gas intake by controlling the flow regulation unit according to the third preset intake volume adjustment step size, and record the third film formation rate information at this time using the ellipsometry, and then return to step B8. B10. The inert gas intake corresponding to the maximum value of the third film-forming speed information is taken as the second preset intake volume, and the flow regulation unit is controlled to adjust the inert gas intake volume to the second preset intake volume. B11. Analyze whether the heating amount of the inert gas exceeds the second preset heating amount range. If yes, proceed to step B13; otherwise, proceed to step B12. B12. Adjust the heating unit according to the second preset heating amount step size to adjust the heating amount of the inert gas, and use the ellipsometry to record the fourth film formation rate information at this time, and then return to step B11. B13. Take the heating amount of the inert gas corresponding to the maximum value of the fourth film formation rate information as the preset heating amount, and then combine the preset heating amount, the first preset air intake amount, the preset spacing and the second preset air intake amount into a pre-calibrated parameter combination.

7. The atomic layer deposition system according to claim 2, characterized in that, Multiple air vents within the same temperature control area are evenly distributed within that temperature control area.

8. The atomic layer deposition system according to claim 1, characterized in that, The reaction chamber is also provided with an exhaust port for tail gas, and the process gas inlet and the exhaust port for tail gas are respectively located on both sides of the stage.

9. The atomic layer deposition system according to claim 8, characterized in that, The process gas inlet is located directly above the center of the stage, and there are multiple exhaust gas outlets, which are symmetrically arranged with the center of the stage as the center of symmetry.

10. An atomic layer deposition method, characterized in that, In an atomic layer deposition system as described in any one of claims 1-9, the atomic layer deposition method comprises the following steps: S1. Obtain the corresponding pre-calibrated parameter combination based on the type of process gas currently supplied and the current pressure of the reaction chamber. The pre-calibrated parameter combination includes a preset heating amount, a first preset air intake amount, a preset spacing, and a second preset air intake amount. S2. The heating unit and the flow regulating unit are controlled to adjust the heating amount and the intake amount of the inert gas according to the preset heating amount and the second preset intake amount. The process gas supply component is controlled to adjust the intake amount of the process gas according to the first preset intake amount. The lifting drive mechanism is controlled to adjust the distance between the platform and the process gas inlet according to the preset distance.

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