High-coaxiality semiconductor laser structure
By setting positioning holes on the COS of the semiconductor laser and setting positioning columns on the seat tongue, the problem of difficulty in adjusting the laser indicator light coaxiality is solved, the coaxiality of the laser is improved, and the requirement of long-distance code scanning is met.
Patent Information
- Application Number
- CN202420086419.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2023-12-25
- Filing Date
- 2024-01-15
- Publication Date
- 2024-12-31
- Estimated Expiration
- 2034-01-15
AI Technical Summary
In the field of laser scanning code scanning, the indicator coaxiality of the indicator light is difficult to accurately adjust, which makes it difficult to scan codes, especially when scanning codes at long distances. Manual debugging has problems such as poor accuracy and unquantification.
A high-coaxial semiconductor laser structure is designed. By setting positioning holes on the COS and setting positioning columns on the tube seat tongue, a reference point and positioning point are provided, and the conductors are connected to the tube seat leads to ensure the laser indication. Optical coaxiality avoids excessive adjustment of light.
The coaxiality of the laser is significantly improved, and the problems of over-specialization of COS probing and indentation and adjustment of deflection angle during light debugging are solved, and the requirements for the coaxiality of the laser are met by scanning codes from long distances.
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Figure CN222282502U_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the technical field of semiconductor lasers, and in particular to a semiconductor laser structure with high coaxiality. Background Art
[0002] The information disclosed in the background of the invention is only intended to enhance the understanding of the overall background of the invention and should not be necessarily regarded as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to a person skilled in the art.
[0003] Semiconductor lasers have the advantages of all-solid-state, small size, light weight, long life, high efficiency, high reliability, and high absorption of metals for semiconductor lasers. They are widely used in solid-state laser pumping, laser processing, laser cutting, precision detection and measurement, communication and information processing, medical and beauty, military and other aspects, and have caused revolutionary breakthroughs in many fields. The market demand and development potential are huge. Among the various types of semiconductor laser packaging, low-power lasers generally use TO packaging.
[0004] In the field of laser code scanning, low-power lasers are generally used to indicate the scanning area. Depending on the distance of the code scanning, there are differences in the coaxial requirements of the indicator light. For example, long-distance code scanning in warehouses can reach 10 meters. If the coaxiality of the indicator light is poor, it will cause the indicator light and the code scanning sensor to be offset, and ultimately cause code scanning difficulties. The coaxiality of the indicator light is mainly achieved through the alignment process in the TO laser packaging process. The main purpose of the alignment is to fine-tune the COS deflection angle. At present, manual work is generally used, which has poor accuracy and often has problems such as over-adjustment. Only rough adjustments can be made and are not quantifiable, which cannot meet the requirements of laser coaxiality for long-distance code scanning. Summary of the invention
[0005] In view of the above problems, the present invention provides a semiconductor laser structure with high coaxiality, which can well ensure the coaxiality of the laser's indicator light and overcome the problems of poor manual light alignment accuracy and easy over-adjustment. Specifically, the present invention discloses the following technical solutions.
[0006] A semiconductor laser structure with high coaxiality, comprising: a tube seat base, a tube seat tongue, a positioning column, a tube seat lead, a COS and a wire. The tube seat tongue is fixed on the side wall of the tube seat base, and the positioning column is fixed on the upper surface of the tube seat tongue. The tube seat lead is fixed on the back of the tube seat base, and there are two tube seat leads, one of which is connected to the tube seat tongue. The COS is fixed on the upper surface of the tube seat tongue, and the positioning column is inserted into the bottom surface of the COS. The COS is connected to the other tube seat lead through a wire.
[0007] Furthermore, the COS includes a heat sink and a chip, and the chip is fixed on the upper surface of the heat sink.
[0008] Furthermore, the heat sink has a positioning hole, and the positioning column is tightly inserted in the positioning hole.
[0009] Furthermore, the aperture of the positioning hole is N+X, wherein: N is the diameter of the positioning column, and X=50-80 um.
[0010] Furthermore, the depth of the positioning hole is H+Y, wherein: Y is the height of the positioning column, Y=20-50 um.
[0011] Furthermore, a terminal is fixed on the tube base, another tube base lead is connected to the terminal, and two ends of the wire are respectively connected to the COS and the terminal.
[0012] Compared with the prior art, the present invention has at least the following beneficial effects: the high coaxiality semiconductor laser structure of the present invention provides a reference point and a positioning point in the packaging light alignment process of the product by setting a positioning hole on the COS and a positioning column on the tube seat and tube tongue, thereby solving the problem of COS protruding and retracting beyond the specification and difficulty in adjusting the deflection angle due to excessive light alignment in the process of direct silver paste bonding and then light alignment and debugging of the conventional COS, thereby greatly improving the coaxiality of the product chip and the coaxiality of the laser light. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] The accompanying drawings in the specification, which constitute a part of the present invention, are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute improper limitations on the present invention.
[0014] Figure 1 Schematic diagram of the structure of a semiconductor laser with high coaxiality in the following embodiments.
[0015] Figure 2 Schematic diagram of the structure of the laser tube holder in the following embodiments.
[0016] Figure 3 Schematic diagram of the structure of the heat sink in the following embodiments.
[0017] Among them, the reference numerals represent respectively: 1-tube socket base, 2-tube socket tongue, 3-positioning column, 4-tube socket lead, 5-COS, 6-conducting wire, 7-connecting column, 501-heat sink, 502-chip, 503-positioning hole. DETAILED DESCRIPTION
[0018] It should be noted that the following detailed descriptions are illustrative and intended to provide further explanation of the present invention. Unless otherwise specified, all technical and scientific terms used in the present invention have the same meanings as those commonly understood by those skilled in the art to which the present invention belongs.
[0019] For the convenience of description, if the words "upper", "lower", "left" and "right" appear in the present invention, they only indicate that they are consistent with the upper, lower, left and right directions of the drawings themselves, and do not limit the structure. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the equipment or components referred to need to have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, any methods and materials similar or equivalent to the described contents can be applied to the method of the present invention.
[0020] refer to Figure 1 , an example of a semiconductor laser structure with high coaxiality, including: a tube seat base 1, a tube seat tongue 2, a positioning column 3, a tube seat lead 4, a COS 5 and a wire 6. Specifically:
[0021] refer to Figure 2 In the laser tube seat, the disc-shaped tube seat base 1 is arranged vertically, the tube seat tongue 2 is fixed on the side wall of the tube seat base 1, and the upper surface of the tube seat tongue 2 has the integrally formed positioning column 3, and the positioning column 3 can be formed by mechanically stamping the upper surface of the tube seat tongue 2 using a stamping die during preparation. The tube seat lead 4 is fixed on the back of the tube seat base 1, and there are two tube seat leads 4, one of which passes through the tube seat base 1 and is connected to the tube seat tongue 2.
[0022] refer to Figure 1 The COS 5 includes a heat sink 501 and a chip 502. The chip 502 is fixed on the upper surface of the heat sink 501 by soldering, and the COS 5 is fixed on the upper surface of the tube base tongue 2. Figure 3 The heat sink 501 has a positioning hole 503. When the COS 5 is installed on the tube base tongue 2, the positioning column 3 is tightly inserted into the positioning hole 503, and the two are fixed by curing glue. The COS 5 is connected to another tube base lead 4 through a wire 6.
[0023] The aperture of the positioning hole 503 is N+X. Where: N is the diameter of the positioning column 3, and X=50~80um. For example, the aperture of the positioning hole 503 is N+50um, N+60um, N+70um, N+80um. The depth of the positioning hole 503 is H+Y. Where: Y is the height of the positioning column 3, and Y=20~50um. For example, the depth of the positioning hole 503 is H+20 um, H+30 um, H+40um, H+50 um.
[0024] In another more specific embodiment, continue to refer to Figure 1 The tube base 1 is also fixed with a terminal 7, the other tube base lead 4 is connected to the terminal 7, and the two ends of the wire 6 are respectively connected to the COS 5 and the terminal 7. The wire 6 can be made of gold wire or the like.
[0025] When the COS 5 is aligned and debugged, the laser product after the tube base tube tongue 2 and COS 5 are assembled is installed in the alignment machine, and the laser beam is emitted to the light-emitting cavity surface of the chip 502 of the COS 5, and the paper screen is used to receive the feedback light. According to the relative position of the light spot on the center line of the paper screen, the COS 5 is moved to rotate around the positioning column 5 until the reflected light spot falls into the required limit and the alignment is completed. Then the laser product is placed in an oven for baking to solidify the glue between the positioning hole 503 and the positioning column 3 on the COS 5. By setting the positioning hole 503 on the COS 5 and the positioning column 3 on the tube base tube tongue 2, the product has a reference point and a positioning point in the packaging alignment process, which solves the problem of COS protrusion and retraction exceeding the specification and difficulty in adjusting the deflection angle caused by excessive alignment in the conventional COS directly using silver paste for bonding and then aligning and debugging, and greatly improves the coaxiality of the product chip and the coaxiality of the laser light.
[0026] Finally, it should be noted that any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention. Although the above describes the specific implementation of the present invention in conjunction with the drawings, it is not a limitation of the protection scope of the present invention. Those skilled in the art should understand that on the basis of the technical solution of the present invention, various modifications or deformations that can be made by those skilled in the art without creative labor are still within the protection scope of the present invention.
Claims
1. A semiconductor laser structure with high coaxiality, characterized in that: include: A tube socket base, a tube socket tongue, a positioning column, a tube socket lead, a COS and a wire; wherein: the tube socket tongue is fixed on the side wall of the tube socket base, and the positioning column is fixed on the upper surface of the tube socket tongue; the tube socket lead is fixed on the back of the tube socket base, and there are two tube socket leads, one of which is connected to the tube socket tongue; the COS is fixed on the upper surface of the tube socket tongue, and the positioning column is inserted into the bottom surface of the COS; the COS is connected to the other tube socket lead through a wire.
2. The semiconductor laser structure with high coaxiality according to claim 1, characterized in that: The COS includes a heat sink and a chip; the chip is fixed on the upper surface of the heat sink.
3. The semiconductor laser structure with high coaxiality according to claim 2, characterized in that: The heat sink is provided with a positioning hole, and the positioning column is tightly inserted in the positioning hole.
4. The semiconductor laser structure with high coaxiality according to claim 3, characterized in that: The aperture of the positioning hole is N+X, wherein: N is the diameter of the positioning column, and X=50~80um.
5. The semiconductor laser structure with high coaxiality according to claim 3, characterized in that: The depth of the positioning hole is H+Y, wherein: Y is the height of the positioning column, Y=20~50um.
6. The semiconductor laser structure with high coaxiality according to any one of claims 1 to 5, characterized in that: A terminal is also fixed on the tube base, and another tube base lead is connected to the terminal. The two ends of the wire are respectively connected to the COS and the terminal.