Device for improving particle aggregation in silicon wafer polishing process
By adopting a three-stage setting and anti-pollution coating in the silicon wafer polishing device, the particle aggregation problem caused by residual pollution of the adhesive is solved, which significantly improves the cleanliness of the silicon wafer surface and reduces the unqualification rate.
Patent Information
- Application Number
- CN202421015359.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-11
- Publication Date
- 2025-01-07
- Estimated Expiration
- 2034-05-11
AI Technical Summary
During the silicon wafer polishing process, residual contamination of the adhesive causes the particle measurement value on the wafer surface to be too high, affecting the cleanliness and chip reliability.
A device for improving particle aggregation during silicon wafer polishing is designed, adopting a three-stage setting, the inner diameters of the middle section and the flare-mouth section are expanded, the tail support section maintains the original inner diameter, and the inner wall of the flare-mouth section is equipped with anti-mouth section. Contaminate coatings to reduce adhesive backsplash and metal contamination.
It effectively prevents the adhesive from contaminating the silicon wafer surface during polishing, cleaning and drying, reduces the problem of particle aggregation, and reduces the unqualified rate in production practice from 3.59% to 1.48%, significantly improving the cleanliness of the wafer surface.
Smart Images
Figure CN222308489U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of wafer production, and in particular relates to a device for improving particle aggregation in the process of silicon wafer polishing. Background Art
[0002] The cleanliness of the silicon wafer surface will affect the thickness of the photoresist spin coating in the chip lithography process, causing the device circuit to be broken or short-circuited, resulting in chip electrical performance failure and affecting chip reliability. As IC manufacturing technology develops in accordance with Moore's Law, the process line width is getting narrower and narrower, and the requirements for the cleanliness of the silicon wafer surface are getting higher and higher.
[0003] At present, the flatness of silicon wafers is mainly controlled by single-sided polishing, in which adhesive and carrier are bonded together for polishing. After polishing, the wafer is simply cleaned to remove the polishing slurry on the wafer surface to prevent the slurry from drying on the wafer surface. Cleaning and adhesive coating are processed in the same mechanism, resulting in adhesive residue contamination at this mechanism position. During the cleaning and drying process of the wafer, the cleaning liquid splashes back to the wafer surface with adhesive, causing contamination and making the particle measurement value on the wafer surface higher. How to prevent adhesive residue from contaminating the wafer is an urgent problem that needs to be solved. Utility Model Content
[0004] The purpose of the utility model is to provide a device for improving particle aggregation during the polishing process of silicon wafers in order to solve the deficiencies of the prior art.
[0005] The purpose of this utility model is achieved by the following technical solutions:
[0006] A device for improving particle aggregation during silicon wafer polishing, comprising, from top to bottom, a bell mouth section, a middle section and a tail support section connected in sequence;
[0007] The middle section and the tail support section are arranged in a stepped manner, and the inner diameter of the middle section is larger than the inner diameter of the tail support section; the middle section is used to accommodate the silicon wafer and the silicon wafer support base; the tail support section is used to accommodate the base support column;
[0008] An anti-pollution coating is provided on the inner side wall of the bell mouth section.
[0009] Preferably, the inner diameter of the middle section is 15 to 25 mm larger than the inner diameter of the tail support section.
[0010] Preferably, the inner diameter of the middle section is 105-115 mm larger than the diameter of the base, the height of the middle section is 20-25 mm larger than the height of the base, and the base is located at the center of the middle section.
[0011] Preferably, the anti-pollution coating material is Teflon.
[0012] The present application improves the two-stage setting of the related art into a three-stage setting, enlarging the inner diameter of the middle section and the upper bell-mouth section where the base is placed, reducing the splashback of the adhesive, and keeping the original inner diameter of the tail support section where the base support column is placed, so as to minimize the space occupied by the device and facilitate connection with the polishing machine. In addition, the small inclined arm is removed to reduce the splashback pollution reduced by the small inclined arm. At the same time, in order to replace the small inclined arm and prevent metal pollution, an anti-pollution coating is provided on the inner side wall of the bell-mouth section, which effectively improves the problem of particle aggregation on the surface of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0013] Figure 1 It is a structural schematic diagram of a device in the related art;
[0014] Figure 2 It is a structural schematic diagram of a device provided in a preferred embodiment of the present application;
[0015] Among them, 1-base; 2-base support column; 3-bell mouth section; 4-vertical section; 5-small inclined arm; 6-middle section; 7-tail support section. DETAILED DESCRIPTION
[0016] like Figure 1 As shown, a wax pot device used in the related art is a two-stage setting, including a bell-mouth section 3 and a vertical section 4. The base 1 and the base support column 2 for placing the silicon wafer are located in the vertical section, and a small inclined wall 5 is provided on the top of the bell-mouth section. On the one hand, in the device, an adhesive needs to be coated on the ceramic carrier to fit the silicon wafer and the ceramic carrier. This process easily causes the adhesive to remain on the inner wall of the wax pot. On the other hand, after the polished silicon wafer is cleaned, it needs to be dried and dehydrated in the device. During the drying process, the cleaning agent contacts the inner wall of the wax pot and splashes back, which will stick to the adhesive and splash onto the surface of the silicon wafer, causing more particles to gather on the surface of the silicon wafer, causing silicon wafer contamination.
[0017] In view of the above problems, the utility model provides a device for improving particle aggregation during the polishing process of silicon wafers, such as Figure 2 As shown, from top to bottom, it includes a bell-mouth section 3, a middle section 6 and a tail support section 7 which are connected in sequence. The middle section and the tail support section are arranged in a stepped manner, and the inner diameter of the middle section 6 is larger than the inner diameter of the tail support section 7; the middle section is used to accommodate the silicon wafer and the silicon wafer support base 1; the tail support section is used to accommodate the base support column 2; and an anti-pollution coating is provided on the inner side wall of the bell-mouth section.
[0018] The present application improves the two-stage setting of the related art into a three-stage setting, expands the inner diameter of the middle section and the upper bell-mouth section where the base is placed, reduces the splashback of the adhesive, and keeps the original inner diameter of the tail support section where the base support column is placed, so as to minimize the space occupied by the device and facilitate connection with the polishing machine. In addition, the small inclined arm is removed to reduce the splashback pollution reduced by the small inclined arm. At the same time, in order to replace the small inclined arm and prevent metal pollution, an anti-pollution coating is provided on the inner side wall of the bell-mouth section to reduce the contamination and adhesion of metal, dust, adhesive and other substances.
[0019] Preferably, the inner diameter of the middle section is 15 to 25 mm larger than the inner diameter of the tail support section.
[0020] Preferably, the inner diameter of the middle section is 105-115 mm larger than the diameter of the base, the height of the middle section is 20-25 mm larger than the height of the base, and the base is located at the center of the middle section.
[0021] Preferably, the anti-pollution coating material is Teflon, which has good waterproof, oil-proof and anti-fouling functions and can effectively prevent impurities from adhering and polluting.
[0022] Using the device provided by this application, compared with using Figure 1 The related technology can effectively prevent the residual adhesive in the mechanism from contaminating the silicon wafer surface during the polishing, cleaning and drying process, and improve the problem of particle aggregation on the silicon wafer surface. The improvement rate has reached 2.11% (using Figure 1 The unqualified rate of the structural products shown is 3.59%, and the unqualified rate of the structural products using the present application is reduced by 1.48%), and the effect is obvious.
[0023] Although preferred embodiments of the present invention have been described, those skilled in the art may make additional changes and modifications to these embodiments once they are aware of the basic creative concepts. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention. Obviously, those skilled in the art may make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.
Claims
1. A device for improving particle aggregation during silicon wafer polishing, characterized in that: From top to bottom, it includes a bell mouth section, a middle section and a tail support section connected in sequence; The middle section and the tail support section are arranged in a stepped manner, and the inner diameter of the middle section is larger than the inner diameter of the tail support section; the middle section is used to accommodate the silicon wafer and the silicon wafer support base; the tail support section is used to accommodate the base support column; An anti-pollution coating is provided on the inner side wall of the bell mouth section.
2. The device for improving particle aggregation during silicon wafer polishing as claimed in claim 1, characterized in that: The inner diameter of the middle section is 15 to 25 mm larger than the inner diameter of the tail support section.
3. The device for improving particle aggregation during silicon wafer polishing as claimed in claim 1, characterized in that: The inner diameter of the middle section is 105-115 mm larger than the diameter of the base, the height of the middle section is 20-25 mm larger than the height of the base, and the base is located at the center of the middle section.
4. The device for improving particle aggregation during silicon wafer polishing as claimed in claim 1, characterized in that: The anti-pollution coating material is Teflon.