Semiconductor laser
By setting ladder-type steps and reflection surfaces on the heat sink and waveguide module of the semiconductor laser, the uniformization of the spot is achieved, the problem of uneven spots in the prior art is solved, and the performance of optoelectronic equipment is improved.
Patent Information
- Application Number
- CN202323664539.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-29
- Publication Date
- 2025-01-07
- Estimated Expiration
- 2033-12-29
AI Technical Summary
Existing semiconductor lasers cannot shape and homogenize the light spot, resulting in uneven light field and cannot meet the needs of certain applications.
A semiconductor laser is designed. By setting multiple ladder-type steps on the heat sink to install the light source module and setting corresponding ladder-type steps on the waveguide module, the reflection surface is used to form a reflection cavity and multiple reflections to achieve uniformity of the light spot. .
The output power per unit area and the uniformity of the spot energy are improved, making the beam energy distribution more uniform, and is suitable for optoelectronic equipment such as laser hair removal equipment.
Smart Images
Figure CN222320806U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor laser technology, and in particular to a semiconductor laser. Background Art
[0002] The light field of a semiconductor laser is divergent and asymmetric. In the direction perpendicular to the PN junction plane (fast axis direction), the divergence angle is large, usually between 20° and 45°; in the direction parallel to the PN junction plane (slow axis direction), the divergence angle is small, usually between 6° and 12°. Therefore, the light field of a semiconductor diode laser is elliptical in spatial distribution. For some applications, the laser spot needs to be shaped and homogenized, but current semiconductor lasers cannot be used for its light spot transmission and shaping and homogenization. Utility Model Content
[0003] The present application provides a semiconductor laser, aiming to improve the problem that the semiconductor laser cannot shape and homogenize the light spot.
[0004] In order to achieve the above technical effects, a technical solution adopted in this application is: to provide a semiconductor laser, comprising:
[0005] A heat sink, wherein one end of the heat sink along a first direction is provided with a plurality of first ladder-shaped steps;
[0006] A plurality of light source modules are connected to the first ladder-shaped steps, and each first ladder-shaped step is provided with at least one light source module; and
[0007] A waveguide module, wherein the waveguide module is provided with a plurality of second ladder-shaped steps, and the plurality of second ladder-shaped steps are respectively arranged correspondingly on one side of the plurality of first ladder-shaped steps along the first direction;
[0008] Each second trapezoidal step has a light incident end face, a first light reflecting surface adjacent to the light incident end face, and a light emitting end face. The light incident end face is arranged at an angle to the first light reflecting surface. The light incident end face is arranged opposite to the light emitting end face of the light source module on the corresponding first trapezoidal step. The light incident end face is arranged perpendicular to the light emitting direction of the light source module on the corresponding first trapezoidal step.
[0009] In some examples, the waveguide module further has a second reflective surface, which is disposed between the light incident end surface and the light output end surface, and is disposed around the first reflective surface to form a reflective cavity with the first reflective surface to reflect and conduct the incident light.
[0010] In some examples, the second light reflecting surface is arranged perpendicular to the light incident end surface.
[0011] In some examples, the waveguide module further has a third reflecting surface, which is disposed between the second reflecting surface and the light emitting end surface and is used to compress and reflect the light reflected by the first reflecting surface and the second reflecting surface toward the light emitting end surface.
[0012] In some examples, the total area of the light incident end face is greater than the total area of the light emitting end face.
[0013] In some examples, the semiconductor laser further includes a housing, and the heat sink, the light source module, and the waveguide module are disposed in the housing.
[0014] In some examples, the semiconductor laser further includes a heat sink connected to the heat sink, and the heat sink is used to dissipate heat from the heat sink.
[0015] In the above scheme, by arranging a plurality of first step-shaped steps on the heat sink, at least one light source module can be installed on each step-shaped step, so that the plurality of light source modules can be conveniently formed into a light source array, thereby improving the output power per unit area; by arranging a plurality of second step-shaped steps corresponding to the first step-shaped steps on the waveguide module, the light source module on each first step-shaped step can correspond to vertical incidence on the second step-shaped step, and output after reflection and homogenization in the waveguide module, so that the output light spot energy distribution is uniform. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.
[0017] Figure 1 is a schematic structural diagram of an example of a semiconductor laser of the present application;
[0018] Figure 2 This is a structural schematic diagram of an example of the cooperation state between the light source module and the heat sink of the present application;
[0019] Figure 3 is a structural schematic diagram of an example of a waveguide module of the present application;
[0020] Figure 4 is a structural schematic diagram of another example of the semiconductor laser of the present application;
[0021] Figure 5 It is a structural schematic diagram of another example of the semiconductor laser of the present application.
[0022] Among them: 10, shell; 100, heat sink; 110, first trapezoidal step; 111, first surface; 112, second surface; 200, light source module; 210, laser light source; 220, optical module; 300, waveguide module; 310, second trapezoidal step; 320, light incident end face; 330, first reflecting surface; 340, second reflecting surface; 350, third reflecting surface; 360, light emitting end face; 370, waveguide body; 400, cushion layer; 500, heat dissipation device; 1a, first direction; 1b, second direction. DETAILED DESCRIPTION
[0023] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.
[0024] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the accompanying drawings, which are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present application. In addition, the terms "first" and "second" are used only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined.
[0025] In this application, the word "exemplary" is used to mean "used as an example, illustration, or description." Any embodiment described in this application as "exemplary" is not necessarily to be construed as being preferred or advantageous over other embodiments. The following description is given to enable any technician in the field to implement and use the present application. In the following description, details are listed for the purpose of explanation. It should be understood that a person of ordinary skill in the art can recognize that the present application can be implemented without using these specific details. In other instances, well-known structures and processes will not be elaborated in detail to avoid obscuring the description of the present application with unnecessary details. Therefore, the present application is not intended to be limited to the embodiments shown, but is consistent with the widest scope consistent with the principles and features disclosed in the present application.
[0026] The multiple terms in the examples of this application refer to at least two (including two).
[0027] Semiconductor lasers can be used in a variety of optoelectronic devices. Taking laser hair removal equipment as an example, semiconductor lasers can be used for laser spot transmission and shaping and homogenization through truncated cone optical waveguides. However, due to the uneven vertical direction of the front-end light source of the current optical waveguide, conventional truncated cone optical waveguides cannot be used for their spot transmission and shaping and homogenization.
[0028] See also Figure 1 , Figure 2 and Figure 3 The present application example provides a semiconductor laser, including a heat sink 100, a waveguide module 300 and a plurality of light source modules 200; the heat sink 100 is provided with a plurality of first ladder-shaped steps 110 at one end along a first direction 1a; the plurality of light source modules 200 are connected to the first ladder-shaped steps 110, and each of the first ladder-shaped steps 110 is provided with at least one light source module 200; the waveguide module 300 is provided with a plurality of second ladder-shaped steps 310, and the plurality of second ladder-shaped steps 310 are respectively provided on the plurality of first ladder-shaped steps 1 10 along one side in the first direction 1a; each second trapezoidal step 310 respectively has a light incident end surface 320, a first light reflecting surface 330 adjacent to the light incident end surface 320, and a light emitting end surface 360, the light incident end surface 320 and the first light reflecting surface 330 are arranged at an angle, the light incident end surface 320 and the light emitting end surface 360 of the light source module 200 on the corresponding first trapezoidal step 110 are arranged opposite to each other; the light incident end surface 320 is arranged perpendicular to the light emitting direction of the light source module 200 on the corresponding first trapezoidal step 110.
[0029] The heat sink 100 can be used to install the light source module 200, and the temperature of the heat sink 100 does not change with the amount of heat energy transferred to it. In this example, the heat sink 100 has one end along the first direction 1a, wherein the heat sink 100 is provided with a plurality of first ladder-shaped steps 110 at one end along the first direction 1a. The plurality of first ladder-shaped steps 110 described in this example can be as follows: Figure 1 and Figure 2 As shown in the figure, each first stepped step 110 has a first surface 111 and a second surface 112 adjacent to the first surface 111, wherein the first surface 111 and the second surface 112 can be arranged at an angle. In this example, optionally, the first surface 111 and the second surface 112 can be arranged perpendicularly to each other so that the first surface 111 and the second surface 112 are combined to form a vertical step.
[0030] The light source module 200 is connected to the first ladder-shaped step 110. The light source module 200 in this example may include a laser light source 210 and an optical module 220. The laser light source 210 may be installed on the first surface 111 of the first ladder-shaped step 110. The optical module 220 may be connected to the laser light source 210. Optionally, in this example, the laser light source 210 may be packaged using a single light-emitting point chip or a chip with multiple light-emitting points. Optionally, in this example, the optical module 220 may be a fast-axis collimating lens, which may be fixed to the laser module by UV glue. The light-emitting direction of the laser light source 210 in this example may be set along the first direction 1a. At least one light source module 200 is arranged on each first ladder-shaped step 110, and multiple light source modules 200 form an array output on the heat sink 100. The light-emitting directions of the laser light source 210 of the multiple light source modules 200 in this example may be the same, which may facilitate the installation of multiple laser light sources 210 on the one hand, and may also facilitate the matching of the waveguide module 300 with the laser light source 210 on the other hand.
[0031] The waveguide module 300 matches the light source module 200 and is used to totally reflect the light beam emitted by the light source module 200. The waveguide module 300 in this example can be made of solid quartz optical glass. The waveguide module 300 has a second stepped step 310, wherein each second stepped step 310 has a light incident end face 320, a first light reflecting surface 330 and a light emitting end face 360, the second stepped step 310 is arranged on one side of the light source module 200 along the first direction 1a, and each first stepped step 110 can correspond to a second stepped step 310, so that the light beam output by the light source module 200 on the first stepped step 110 can be incident on the light incident end face 320 corresponding to the second stepped step 310, the first light reflecting surface 330 totally reflects the light beam incident on the light incident end face 320, and the light beam can be output to the outside of the waveguide module 300 through the light emitting end face 360. Optionally in this example, the light incident end face 320 of the second trapezoidal step 310 is perpendicular to the light emitting direction of the light source module 200 at the corresponding position, and then by making the light beam of the light source module 200 vertically incident on the light incident end face 320, the light beam output by the light source module 200 can be completely incident on the light incident end face 320 of the second trapezoidal step 310 of the corresponding waveguide module 300 in the forward direction, and then the light spot can be easily transmitted, shaped and homogenized. Optionally, the first reflecting surface 330 can be arranged parallel to the first surface 111 described in the above example. In this example, the angle formed by the fast and slow axis divergence of the first reflecting surface 330 and the light beam emitted by the light source module 200 meets the total reflection condition of the light beam transmission. Optionally in this example, in order to increase the reflection of the first reflecting surface 330 on the light beam outside the total reflection condition, the first reflecting surface 330 can be provided with a high reflection film (not shown in the figure). In some examples, in order to increase the transmittance of the light incident end face 320 , an anti-reflection film (not shown in the figures) may be provided on the light incident end face 320 .
[0032] Please refer to Figures 1 to 3 In this example, the multiple second step-shaped steps 310 can be staggered with the multiple first step-shaped steps 110 in the second direction 1b, so that the light-emitting side of the light source module 200 on each first step-shaped step 110 can correspond to the light-incoming end face 320 of a second step-shaped step 310.
[0033] The light incident end face 320 and the first light reflecting surface 330 are arranged at an angle, which means that the light incident end face 320 is not parallel to the first light reflecting surface 330, so that the light beam transmitted at the light incident end face 320 can be transmitted to the direction of the light emitting end face 360 under the reflection of the first light reflecting surface 330. In some examples, the first light reflecting surface 330 can be the lower surface of the first step 110. In some examples, the first light reflecting surface 330 is arranged perpendicular to the light incident end face 320. Optionally, in this example, the light incident end face 320 can be arranged parallel to the second surface 112. In this example, by arranging a plurality of first step 110 on the heat sink 100 and arranging at least one light source module 200 on each first step 110, the number of light sources can be increased, thereby improving the output power per unit area of the semiconductor laser; combined with the second step 310 corresponding to each first step 110, the light spot is reflected and homogenized by the second step 310 and then output, thereby improving the uniformity of the output beam energy.
[0034] The height of the light incident end surface 320 in this example along the second direction 1b may correspond to the height of the second surface 112 of the first step 110, so that the light source output by the light source module 200 may be incident on the light incident end surface 320 of the second step 310 at the corresponding position. The length of the first light reflecting surface 330 in this example along the first direction 1a may correspond to the length of the first surface 111 of the first step 110, so that each second step 310 may be correspondingly arranged on one side of the first step 110 along the first direction 1a, so that the light transmitted by the corresponding light incident end surface 320 may be reflected toward the light emitting end surface 360 through the corresponding first light reflecting surface 330.
[0035] The light emitting surface of the waveguide module 300 in this example may be located at an end away from the heat sink 100 along the first direction 1 a , and the light emitting end surface 360 may be arranged parallel to the light incident end surface 320 .
[0036] In some examples, the waveguide module 300 further has a second reflective surface 340, which is disposed between the light incident end surface 320 and the light emitting end surface 360, and the second reflective surface 340 is disposed around the first reflective surface 330 to form a reflective cavity with the first reflective surface 330 to reflect and conduct the incident light.
[0037] The second reflective surface 340 is arranged around the first reflective surface 330, and the second reflective surface 340 can reflect the light reflected by the first reflective surface 330 toward the light-emitting end surface 360. The angle formed by the fast and slow axis divergence of the second reflective surface 340 and the light beam emitted by the light source module 200 in this example meets the total reflection condition of the light beam transmission. The light beam reflected by the first reflective surface 330 is reflected again by the second reflective surface 340 to further homogenize the light beam. Optionally in this example, in order to increase the reflection of the light beam outside the total reflection condition of the second reflective surface 340, a high reflection film (not shown in the figure) can be provided on the second reflective surface 340. In some examples, the second reflective surface 340 can be one of a cylindrical surface, a prism surface, a frustum surface, and a prism surface. In some examples, the second reflective surface 340 is arranged perpendicular to the light-entering end surface 320, and the light beam reflected by the first reflective surface 330 can be totally reflected by the second reflective surface 340 and transmitted toward the light-emitting end surface 360. In some examples, the second light reflecting surface 340 is provided with a high reflection film to increase the reflection of the light beam by the second light reflecting surface 340 other than the total reflection condition.
[0038] Please refer to Figure 4 In some examples, the waveguide module 300 further has a third reflective surface 350, which is disposed between the second reflective surface 340 and the light-emitting end surface 360, and is used to compress and reflect the light reflected by the first reflective surface and the second reflective surface 340 toward the light-emitting end surface 360. The angle formed by the divergence of the fast and slow axes of the light beam emitted by the light source module 200 on the third reflective surface 350 meets the total reflection condition of the light beam transmission. The light beam passes through the first reflective surface 330, the second reflective surface 340 and the third reflective surface 350 in sequence for total reflection, and the light beam is output after being homogenized by multiple reflections to improve the uniformity of the output light beam energy. In some examples, the third reflective surface 350 can be one of a cylindrical surface, a prism surface, a frustum surface, and a prism surface. In some examples, the third reflective surface 350 is provided with a high-reflection film (not shown in the figure) to increase the reflection of the second reflective surface 340 on the light beam outside the total reflection condition. In some examples, the second reflecting surface 340 and the third reflecting surface 350 can be composed of two sections of square or circular reflecting surfaces, and the angles formed by the second reflecting surface 340 and the third reflecting surface 350 of the waveguide module 300 and the fast and slow axis divergence of the light beam emitted by the light source module 200 meet the total reflection conditions of the light beam transmission, thereby maintaining the total reflection of the laser in the waveguide module 300.
[0039] See also Figure 4 In some examples, the total area of the light incident end face 320 is greater than the total area of the light emitting end face 360. In this example, by reducing the area of the light emitting end face 360, the energy density of the light beam output can be increased. The total area of the light incident end face 320 in this example refers to the sum of the areas of the light incident end faces 320 of the plurality of second ladder-shaped steps 310.
[0040] See also Figure 5 In some examples, the waveguide module 300 includes a plurality of waveguide bodies 370 arranged in a stacked manner, each waveguide body having a light incident end face 320, a first light reflecting surface 330, and a light emitting end face 360; the plurality of waveguide bodies 370 are staggered at one end close to the light source module 200, so that the plurality of waveguide bodies form a plurality of second ladder-shaped steps 310. In this example, each waveguide body 370 has a light incident end face 320, a first light reflecting surface 330, and a light emitting end face 360, and adjacent waveguide bodies 370 are staggered at positions close to the first ladder-shaped step 110 along the first direction 1a, so that the plurality of waveguide bodies 370 form a plurality of second ladder-shaped steps 310 on one side close to the first ladder-shaped step 110. The light beam emitted by the light source module 200 on the first trapezoidal step 110 can be input to the light incident end face 320 of the corresponding waveguide body 370 , and is totally reflected by the first light reflecting surface 330 of the corresponding waveguide body 370 , and the light beam is output through the light emitting end face 360 of the corresponding waveguide body 370 .
[0041] In this example, the multiple waveguide bodies 370 can be pasted with low-refractive-index materials, so that the multiple waveguide bodies 370 meet the total reflection requirements, so that the incident light beams are independently totally reflected in their corresponding waveguide bodies 370 and transmitted to the light-emitting end face 360. Optionally, the multiple waveguide bodies 370 can also be fixed as a whole externally. When fixed, the refractive index of the material at the contact part of the adjacent waveguide bodies 370 can be reduced so that the refractive index of the material at the contact part of the adjacent waveguide bodies 370 is smaller than the refractive index of the corresponding waveguide body 370, and the gap between the adjacent waveguide bodies 370 when stacked is reduced, so that the light beam propagation path of the waveguide body 370 is as follows: Figure 1 tend to be consistent.
[0042] In some examples, the semiconductor laser further includes a housing 10 , and the heat sink 100 , the light source module 200 , and the waveguide module 300 are disposed in the housing 10 .
[0043] The shell 10 forms the external structure of the semiconductor laser, and the shell 10 is at least partially a hollow structure for installing the heat sink 100, the light source module 200 and the waveguide module 300. In some examples, a cushion layer 400 is provided between the shell 10 and the waveguide module 300. By providing the cushion layer 400 between the waveguide module 300 and the shell 10, the waveguide module 300 can be prevented from being crushed when the shell 10 and the waveguide module 300 are fixedly connected; in this example, optionally, the cushion layer 400 should reduce the contact area between the cushion layer 400 and the waveguide module 300, so that the light passing area is suspended, and the refractive index of the air in the suspended area is lower than the refractive index of the waveguide module 300, so that it does not affect the total reflection of the light beam inside the waveguide module 300. If contact is unavoidable, the refractive index of the cushion layer 400 can be made lower than the refractive index of the waveguide to ensure that the laser inside the waveguide module 300 is fully reflected.
[0044] In some examples, the semiconductor laser further includes a heat sink 500 connected to the heat sink 100, and the heat sink 500 is used to dissipate heat from the heat sink 100. The heat sink 500 in this example can be installed inside the heat sink 100, or it can be installed at the bottom of the heat sink 100. The heat sink 500 can correspond to the position of the above-mentioned multiple first ladder-shaped steps 110, and the heat sink 100 can dissipate heat by air cooling or water cooling. Optionally, water cooling can be used in this example, and a heat dissipation channel can be set inside the heat sink 100 for water-cooled circulation heat dissipation. Optionally, air cooling can be used in this example, and the bottom of the heat sink 100 can be set as a fin for air cooling and heat dissipation.
[0045] The above description is only an implementation method of the present application, and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly used in other related technical fields, are also included in the patent protection scope of the present application.
Claims
1. A semiconductor laser, characterized in that: include: A heat sink, wherein one end of the heat sink along a first direction is provided with a plurality of first ladder-shaped steps; A plurality of light source modules are connected to the first ladder-shaped steps, and each of the first ladder-shaped steps is provided with at least one light source module; as well as A waveguide module, wherein the waveguide module is provided with a plurality of second ladder-shaped steps, and the plurality of second ladder-shaped steps are respectively arranged correspondingly on one side of the plurality of first ladder-shaped steps along the first direction; Each of the second trapezoidal steps has a light incident end face, a first light reflecting surface adjacent to the light incident end face, and a light emitting end face. The light incident end face is arranged at an angle to the first light reflecting surface. The light incident end face is arranged opposite to the light emitting end face of the light source module on the corresponding first trapezoidal step. The light incident end face is arranged perpendicular to the light emitting direction of the light source module on the corresponding first trapezoidal step.
2. The semiconductor laser according to claim 1, characterized in that The waveguide module also has a second reflective surface, which is arranged between the light incident end surface and the light emitting end surface. The second reflective surface is arranged around the first reflective surface and is used to form a reflective cavity with the first reflective surface to reflect and conduct the incident light.
3. The semiconductor laser according to claim 2, characterized in that The second light reflecting surface is arranged perpendicular to the light incident end surface.
4. The semiconductor laser according to claim 3, characterized in that The waveguide module further comprises a third reflecting surface, which is arranged between the second reflecting surface and the light emitting end surface and is used for compressing and reflecting the light reflected by the first reflecting surface and the second reflecting surface toward the light emitting end surface.
5. The semiconductor laser according to any one of claims 1 to 4, characterized in that The total area of the light incident end faces is greater than the total area of the light emitting end faces.
6. The semiconductor laser according to any one of claims 1 to 4, characterized in that The semiconductor laser further includes a housing, and the heat sink, the light source module and the waveguide module are arranged in the housing.
7. The semiconductor laser according to any one of claims 1 to 4, characterized in that The semiconductor laser further comprises a heat dissipation device connected to the heat sink, and the heat dissipation device is used for dissipating heat from the heat sink.