Evaporation mask plate
By designing the evaporation holes of the step structure on the mask plate, the frequency dispersion and mechanical strength problems caused by the height difference between the mask plate thickness and the quartz wafer are solved, which reduces production costs and improves the coating quality of the quartz wafer.
Patent Information
- Application Number
- CN202421145809.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-23
- Publication Date
- 2025-01-14
- Estimated Expiration
- 2034-05-23
AI Technical Summary
During the evaporation process of quartz wafers, the frequency dispersion difference is caused by the height difference between the mask plate and the evaporated electrode, and the thin mask plate is prone to deform or breakage, which increases production costs.
An evaporation mask plate is designed, and a first evaporation tank and a second evaporation tank are respectively set on the first and second surfaces of the main body of the mask plate. The width of the first evaporation tank is smaller than that of the second evaporation tank. The tank forms evaporated holes of the step structure to ensure mechanical strength and reduce the shadow effect.
Without changing the thickness of the mask plate, the scrap rate is reduced, production costs are saved, and the transition area volume between the coating area and the side wall of the evaporation hole is reduced, thereby improving the coating quality of the quartz wafer.
Smart Images
Figure CN222349096U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of mask plates, in particular to an evaporation mask plate. Background Art
[0002] During the evaporation process of the quartz wafer, there is a height difference between the mask plate and the evaporation electrode, which causes frequency dispersion of the quartz wafer after evaporation. Usually, the frequency dispersion caused by the height difference with the evaporation electrode can be reduced by tilting the mask plate at a certain angle during evaporation.
[0003] During evaporation, the quartz wafer is placed on one side of the mask plate and located above the evaporation hole. There is a gap between the other side of the mask plate and the surface of the quartz wafer, that is, the mask plate itself has a certain thickness. In the process of the evaporation material passing through the evaporation hole and being deposited on the surface of the quartz wafer, due to the mask plate being tilted at a certain angle, a shadow transition zone will appear between the coating area and the side wall of the evaporation hole, that is, there is a shadow effect, which affects the coating size of the quartz wafer. Generally, the smaller the gap between the mask plate and the quartz wafer, that is, the smaller the thickness of the mask plate, the weaker the shadow effect. However, a thinner mask plate is prone to deformation or breakage and scrapping in actual use, which greatly increases the production cost. Utility Model Content
[0004] Based on this, it is necessary to provide a vapor deposition mask plate.
[0005] The utility model provides a technical solution to the above technical problem as follows: a vapor deposition mask plate, comprising: a mask plate main body;
[0006] A first evaporation groove is provided on the first surface of the mask plate body;
[0007] A second evaporation tank is provided on the second surface of the mask plate body;
[0008] The width of the first evaporation tank is smaller than the width of the second evaporation tank, and the first evaporation tank is connected to the second evaporation tank to form an evaporation hole.
[0009] In one embodiment, a depth of the first evaporation tank is less than a depth of the second evaporation tank.
[0010] In one embodiment, along the direction from the first surface to the second surface of the mask plate body, the width of the first evaporation groove gradually increases.
[0011] In one embodiment, a third evaporation tank is opened on the bottom side wall of the second evaporation tank, the width of the third evaporation tank is smaller than the width of the second evaporation tank, and the width of the third evaporation tank is larger than the width of the first evaporation tank, and the first evaporation tank, the third evaporation tank and the second evaporation tank are connected in sequence to form the evaporation hole.
[0012] In one embodiment, the number of the evaporation holes is set to be multiple.
[0013] In one embodiment, the cross-sectional shape of the first evaporation tank is rectangular, circular or linear.
[0014] In one embodiment, the cross-sectional shape of the second evaporation tank is rectangular, circular or linear.
[0015] In one embodiment, an alignment mark is provided on the mask plate body.
[0016] In one embodiment, a protective layer is disposed on the mask plate body.
[0017] In one embodiment, the mask plate body is made of stainless steel or nickel.
[0018] The beneficial effect of the utility model is as follows: the utility model provides a vapor deposition mask plate, by opening a first vapor deposition groove on the first surface of the mask plate main body, and opening a second vapor deposition groove on the second surface of the mask plate main body, the width of the first vapor deposition groove is smaller than the width of the second vapor deposition groove, the first vapor deposition groove is connected with the second vapor deposition groove to form a vapor deposition hole with a step structure, without changing the overall thickness of the mask plate, not only ensuring that it has good mechanical strength, reducing its scrap rate, saving production costs, but also reducing the volume of the transition area between the coating area of the quartz wafer and the side wall of the vapor deposition hole, which is conducive to better deposition of the vapor deposition material on the surface of the quartz wafer, reducing the shadow effect caused by the angle tilt of the mask plate during the vapor deposition process, and ensuring the quality of the quartz wafer. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.
[0020] Figure 1 is a schematic diagram of a cross-sectional structure of an existing mask plate;
[0021] Figure 2 is a schematic cross-sectional structure diagram of an evaporation mask plate according to an embodiment;
[0022] Figure 3 The figure is a schematic cross-sectional structure diagram of a vapor deposition mask plate according to an embodiment.
[0023] In the drawings, 10 is a vapor deposition mask plate; 100 is a mask plate body; 200 is a vapor deposition hole; 210 is a first vapor deposition tank; 220 is a second vapor deposition tank; 300 is a quartz wafer. DETAILED DESCRIPTION
[0024] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present invention can be combined with each other. The technical solution of the present invention will be further described below in conjunction with the drawings of the embodiments of the present invention, and the present invention is not limited to the following specific implementation methods.
[0025] It should be understood that the same or similar numbers in the drawings of the embodiments correspond to the same or similar parts. In the description of the present utility model, it should be understood that if there are terms such as "upper", "lower", "front", "back", "left", "right", "top", "bottom" and the like indicating the orientation or positional relationship, they are based on the orientation or positional relationship shown in the drawings, which is only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, the terms describing the positional relationship in the drawings are only used for illustrative purposes and cannot be understood as a limitation on this patent. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.
[0026] In one embodiment, Figure 2 and Figure 3 As shown, a vapor deposition mask plate 10 includes: a mask plate main body 100; a first vapor deposition groove 210 is opened on the first surface of the mask plate main body 100; a second vapor deposition groove 220 is opened on the second surface of the mask plate main body 100; wherein, the width of the first vapor deposition groove 210 is smaller than the width of the second vapor deposition groove 220, and the first vapor deposition groove 210 is connected with the second vapor deposition groove 220 to form a vapor deposition hole 200.
[0027] In this embodiment, a first evaporation tank 210 is provided on the first surface of the mask plate body 100, and a second evaporation tank 220 is provided on the second surface of the mask plate body 100. The width of the first evaporation tank 210 is smaller than the width of the second evaporation tank 220. The first evaporation tank 210 and the second evaporation tank 220 are connected to form an evaporation hole 200 with a step structure. The width of the first evaporation tank 210 corresponds to the actual coating size required by the quartz wafer 300, that is, the size that the evaporation material actually needs to pass through. Figure 1 and Figure 3 As shown, Figure 1Point A in the figure is a shadow transition zone that appears between the coating area of the quartz wafer and the side wall of the evaporation hole when the existing mask plate is subjected to evaporation. The evaporation hole 200 with a step structure can transform the larger transition area between the coating area of the quartz wafer 300 and the side wall of the evaporation hole 200 into a smaller transition area between the coating area of the quartz wafer 300 and the side wall of the first evaporation tank 210. In this way, without changing the overall thickness of the mask plate, it not only ensures that it has good mechanical strength, reduces its scrap rate, and saves production costs, but also reduces the volume of the transition area between the coating area of the quartz wafer 300 and the side wall of the evaporation hole 200, which is conducive to better deposition of the evaporation material on the surface of the quartz wafer 300, weakens the shadow effect caused by the angle tilt of the mask plate during the evaporation process, and ensures the quality of the quartz wafer 300.
[0028] In one embodiment, Figure 3 As shown, the depth of the first evaporation tank 210 is less than the depth of the second evaporation tank 220. Specifically, by setting the depth of the first evaporation tank 210 to be less than the depth of the second evaporation tank 220, it is beneficial to further reduce the volume of the transition area between the coating area of the quartz wafer 300 and the side wall of the first evaporation tank 210, so that the evaporation material can be better deposited on the surface of the quartz wafer 300, and the shadow effect caused by the angle tilt of the mask during the evaporation process is further reduced.
[0029] In one embodiment, the width of the first evaporation tank 210 gradually increases in the direction from the first surface to the second surface of the mask body 100. Specifically, the width of the first end of the first evaporation tank 210 is smaller than the width of the second end of the first evaporation tank 210, which is conducive to further reducing the volume of the transition area between the coating area of the quartz wafer 300 and the side wall of the first evaporation tank 210, and can better reduce the shadow effect caused by the angle tilt of the mask during the evaporation process.
[0030] In one embodiment, a third evaporation tank is provided on the bottom side wall of the second evaporation tank 220, the width of the third evaporation tank is smaller than the width of the second evaporation tank 220, and the width of the third evaporation tank is larger than the width of the first evaporation tank 210, and the first evaporation tank 210, the third evaporation tank and the second evaporation tank 220 are sequentially connected to form the evaporation hole 200. Specifically, by setting the evaporation hole 200 as a three-layer step structure, compared with the evaporation hole 200 with a two-layer step structure, the volume of the transition area between the coating area of the quartz wafer 300 and the side wall of the first evaporation tank 210 can be further reduced, and the evaporation material can be well deposited on the surface of the quartz wafer 300.
[0031] In one embodiment, the number of the evaporation holes 200 is set to be multiple. Specifically, the evaporation holes 200 are evenly distributed on the mask body 100, so that the quartz wafers 300 can be evaporated in batches.
[0032] In one embodiment, the cross-sectional shape of the first evaporation tank 210 is rectangular, circular or linear, and the cross-sectional shape of the second evaporation tank 220 is rectangular, circular or linear. Specifically, the cross-sectional shape of the first evaporation tank 210 can be selected according to the desired evaporation pattern, and the cross-sectional shape of the second evaporation tank 220 is adapted to the cross-sectional shape of the second evaporation tank 220, so that the deposition position of the evaporation material can be accurately controlled during the evaporation process.
[0033] In one embodiment, an alignment mark is provided on the mask body 100. Specifically, by providing the alignment mark on the mask body 100, it is convenient to accurately align the mask with the substrate during the evaporation process. For example, the alignment mark is a hole-shaped structure that can be identified and positioned by an optical system on the device.
[0034] In one embodiment, the material of the mask plate body 100 is stainless steel or nickel. Specifically, the material of the mask plate body 100 is set to stainless steel or nickel, which can ensure its chemical stability and corrosion resistance. Further, a protective layer is provided on the mask plate body 100, and the protective layer is a zinc plating layer or a chromium plating layer, which can improve the hardness, wear resistance and corrosion resistance of the mask plate body 100, can play a good protective role, and improve the service life of the evaporation mask plate 10.
[0035] Compared with the prior art, the utility model has at least the following advantages:
[0036] The utility model provides a vapor deposition mask plate, in which a first vapor deposition groove is provided on a first surface of a mask plate body, and a second vapor deposition groove is provided on a second surface of the mask plate body, the width of the first vapor deposition groove is smaller than the width of the second vapor deposition groove, and the first vapor deposition groove is connected with the second vapor deposition groove to form a vapor deposition hole with a step structure. Without changing the overall thickness of the mask plate, not only is it ensured that it has good mechanical strength, its scrap rate is reduced, and the production cost is saved, but also the volume of the transition area between the coating area of the quartz wafer and the side wall of the vapor deposition hole is reduced, which is conducive to better deposition of the vapor deposition material on the surface of the quartz wafer, and the shadow effect caused by the angle tilt of the mask plate during the vapor deposition process is weakened, thereby ensuring the quality of the quartz wafer.
[0037] Obviously, the above embodiments of the utility model are only examples for clearly explaining the utility model, and are not intended to limit the implementation methods of the utility model. For ordinary technicians in the relevant field, other different forms of changes or modifications can be made on the basis of the above description. It is not necessary and impossible to list all the implementation methods here. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the utility model should be included in the protection scope of the claims of the utility model.
Claims
1. A vapor deposition mask plate, characterized in that: include: Mask plate body; A first evaporation groove is provided on the first surface of the mask plate body; A second evaporation tank is provided on the second surface of the mask plate body; The width of the first evaporation tank is smaller than the width of the second evaporation tank, and the first evaporation tank is connected to the second evaporation tank to form an evaporation hole.
2. The evaporation mask according to claim 1, characterized in that: The depth of the first vapor deposition tank is smaller than the depth of the second vapor deposition tank.
3. The evaporation mask according to claim 2, characterized in that: The width of the first evaporation groove gradually increases along the direction from the first surface to the second surface of the mask plate body.
4. The evaporation mask according to claim 1, characterized in that: A third evaporation tank is opened on the bottom side wall of the second evaporation tank, the width of the third evaporation tank is smaller than the width of the second evaporation tank, and the width of the third evaporation tank is larger than the width of the first evaporation tank, and the first evaporation tank, the third evaporation tank and the second evaporation tank are connected in sequence to form the evaporation hole.
5. The evaporation mask according to claim 1, characterized in that: The number of the evaporation holes is set to be plural.
6. The evaporation mask according to claim 1, characterized in that: The cross-sectional shape of the first evaporation tank is rectangular, circular or linear.
7. The evaporation mask according to claim 6, characterized in that: The cross-section of the second evaporation tank is rectangular, circular or linear.
8. The vapor deposition mask according to claim 1, characterized in that: The mask plate body is provided with an alignment mark.
9. The evaporation mask according to claim 1, characterized in that: A protective layer is arranged on the mask plate main body.
10. The evaporation mask according to claim 1, characterized in that: The mask plate body is made of stainless steel or nickel.