Semiconductor reaction cavity and structural member

Abstract

The utility model relates to the technical field of semiconductor manufacturing equipment, in particular to a semiconductor reaction cavity and a structural member. The utility model provides a semiconductor reaction cavity, which at least comprises a half-moon ring ceramic piece and a structural piece: the half-moon ring ceramic piece is arranged at the body part of the cavity and is of a semicircular structure; the opening position of the half-moon ring ceramic piece corresponds to the wafer conveying channel; the structural member is of a hollow structure and is arranged in the wafer conveying channel; wherein the half-moon ring ceramic piece and the structural piece are connected in an embedded mode. According to the semiconductor reaction cavity provided by the utility model, the structural member is arranged in the direction of the valve port of the wafer conveying channel of the reaction cavity, and the structural member and the half-moon ring ceramic member are in tight embedded connection, so that the rotation of the half-moon ring ceramic member is effectively prevented, the quality of a wafer film is improved, and the efficiency and the stability of semiconductor manufacturing are remarkably improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor manufacturing equipment, and more specifically, to a semiconductor reaction chamber and a structural part. Background Art

[0002] Thin film deposition technology is one of the key technologies for manufacturing microelectronic devices. It realizes the manufacturing of microelectronic devices by forming deposits on the substrate. Common thin film deposition technologies include physical vapor deposition, chemical vapor deposition and other technologies. These technologies can be used to manufacture thin films of various materials and thicknesses to meet different electronic device manufacturing needs.

[0003] Semiconductor reaction chambers are an essential component in the semiconductor device manufacturing process, providing a closed, controlled space to ensure the execution of various semiconductor manufacturing process steps. These reaction chambers play a vital role in the semiconductor industry because they provide a controlled environment to ensure the accuracy, repeatability and purity of the manufacturing process.

[0004] In existing semiconductor thin film deposition equipment, some independent ceramic parts with different functions are usually placed inside the reaction chamber. These ceramic parts mainly have two key functions. First, since the chamber itself is made of metal, the ceramic parts act as an insulator from the chamber. Second, the ceramic parts can also prevent by-products from being deposited on the inner wall of the chamber, making the chamber easier to clean after each use.

[0005] However, the ceramic parts in the reaction chamber may cause some problems during use due to their brittleness. Due to the brittleness of the ceramic parts, even a small vibration or impact may cause tiny cracks on their surface, resulting in powder peeling. These powders may pollute the environment in the reaction chamber and have an adverse effect on the deposition quality of the film. These ceramic parts are usually unable to be positioned circumferentially to avoid damage caused by vibration or impact.

[0006] Figure 1 The schematic diagram of the structure of the semiconductor reaction chamber of the prior art is disclosed, such as Figure 1 As shown, the vibration of the reaction chamber during the temperature rise and fall process and the opening and closing of the valve of the wafer transfer channel 13 may cause the half-moon ring ceramic member 11 to rotate. This rotation will affect the transfer of the wafer, and further affect the uniformity and stability of the thin film deposition.

[0007] Therefore, the above key parts need to be specially designed to reduce vibration and prevent the rotation of the ceramic parts. Utility Model Content

[0008] The utility model aims to provide a semiconductor reaction chamber to solve the problem that ceramic parts in the semiconductor reaction chamber of the prior art are easy to vibrate and rotate.

[0009] In order to achieve the above-mentioned object, the utility model provides a semiconductor reaction chamber, which comprises at least a half-moon ring ceramic part and a structural part:

[0010] The half-moon ring ceramic piece is arranged on the body of the chamber and has a semicircular structure;

[0011] The opening position of the half-moon ring ceramic piece corresponds to the film transmission channel;

[0012] The structural member is a hollow structure and is arranged in the film transmission channel;

[0013] Wherein, the connection between the half-moon ring ceramic component and the structural component is an inlay connection.

[0014] In some embodiments, the structural member has an outer contour that matches the shape of the film transmission channel.

[0015] In some embodiments, the structural member is a tubular structure, and a cross section along the extension direction of the pipe is rectangular.

[0016] In some embodiments, the size of the hollow structure of the structural member is larger than the size of the wafer.

[0017] In some embodiments, the side of the structural member connected to the half-moon ring ceramic member is in an arc shape, and forms a circle in combination with the half-moon ring ceramic member.

[0018] In some embodiments, the structural member is provided with one or more step structures at the connection with the half-moon ring ceramic member;

[0019] Both ends of the half-moon ring ceramic piece are provided with protrusions or depressions that match the steps;

[0020] The half-moon ring ceramic part and the structural part are connected in an inlaid manner through the mutual cooperation of the step and the protrusion or the depression.

[0021] In some embodiments, the cross-section of the step structure is trapezoidal, triangular, semicircular, or rectangular.

[0022] In some embodiments, the structural member is provided with one or more curved structures at the connection with the half-moon ring ceramic member;

[0023] The two ends of the half-moon ring ceramic piece are correspondingly provided with curved surface shapes matching the curved surface;

[0024] The half-moon ring ceramic component and the structural component are connected in an inlaid manner through the mutual cooperation of the curved surface shapes.

[0025] In some embodiments, the structural member is arranged in the direction of the valve port of the film transmission channel of the reaction chamber.

[0026] In some embodiments, the connection between the half-moon ring ceramic component and the structural component is filled with sealing material.

[0027] In order to achieve the above-mentioned purpose, the utility model provides a structural member, which is a hollow structure and is arranged in a film transmission channel of a semiconductor reaction chamber;

[0028] The connection between the structural member and the half-moon ring ceramic member is an inlay connection.

[0029] The utility model proposes a semiconductor reaction chamber and a structural component, wherein the structural component is arranged in the direction of the wafer transfer channel valve port of the reaction chamber, so that a tight mosaic connection is formed between the structural component and the half-moon ring ceramic component, thereby effectively preventing the half-moon ring ceramic component from rotating, thereby avoiding the risk of adverse effects on wafer transmission, eliminating the dead zone in the direction of the wafer transfer channel valve port, reducing the risk of particle generation, improving the quality of wafer film, and significantly improving the efficiency and stability of semiconductor manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] The above and other features, properties and advantages of the present invention will become more apparent through the following description in conjunction with the accompanying drawings and embodiments, in which the same reference numerals always represent the same features, wherein:

[0031] Figure 1 A schematic structural diagram of a semiconductor reaction chamber in the prior art is disclosed;

[0032] Figure 2 A schematic structural diagram of a semiconductor reaction chamber according to an embodiment of the utility model is disclosed;

[0033] Figure 3 A schematic diagram of the connection between a half-moon ring and a structural member according to an embodiment of the utility model is disclosed;

[0034] Figure 4 A schematic structural diagram of a structural member according to an embodiment of the utility model is disclosed;

[0035] Figure 5 A schematic structural diagram of a half-moon ring ceramic component according to an embodiment of the utility model is disclosed;

[0036] Figure 6 A top view of a semiconductor reaction chamber of the prior art is disclosed;

[0037] Figure 7 A top view of a semiconductor reaction chamber according to an embodiment of the utility model is disclosed.

[0038] The meanings of the reference numerals in the figures are as follows:

[0039] 11. Half-moon ring ceramic pieces;

[0040] 13 film transmission channel;

[0041] 14 triangle dead zone;

[0042] 21 half-moon ring ceramic pieces;

[0043] 22 structural parts;

[0044] 23 film transmission channel. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.

[0046] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention. Although the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation, the shape, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated.

[0047] Figure 2 A schematic diagram of the structure of a semiconductor reaction chamber according to an embodiment of the present invention is disclosed. Figure 2 As shown, a semiconductor reaction chamber proposed by the present invention comprises at least a half-moon ring ceramic part 21 and a structural part 22:

[0048] The half-moon ring ceramic member 21 is arranged in the body of the chamber and has a semicircular structure;

[0049] The opening position of the half-moon ring ceramic member 21 corresponds to the film transmission channel 23;

[0050] The structural member 22 is a hollow structure and is disposed in the film transmission channel 23 .

[0051] More specifically, the structural member 22 is arranged at the valve port direction of the film transmission channel 23 of the reaction chamber.

[0052] Figure 3 The figure shows a schematic diagram of the connection between the half-moon ring and the structural member according to an embodiment of the utility model. Figure 3 As shown, the connection between the half-moon ring ceramic component 21 and the structural component 22 is an inlay connection.

[0053] The structural member 22 and the half-moon ring ceramic member 21 are connected in an inlaid manner to form a mutually fixed relationship. On the one hand, the structural member 22 can effectively prevent the half-moon ring ceramic member 21 from rotating. On the other hand, the half-moon ring ceramic member 21 can also prevent the movement of the structural member 22, thereby avoiding adverse effects on wafer transmission.

[0054] Figure 4 A schematic diagram of a structure of a structural member according to an embodiment of the utility model is disclosed, such as Figures 2 to 4 As shown, the outer contour of the structural member 22 matches the shape of the film transmission channel 23, ensuring that the four walls are completely fitted with the channel wall, which can increase the stability of the structural member 22 and the film transmission channel 23 and also form a sealed connection between the structural member 22 and the film transmission channel 23.

[0055] The structural member 22 is a hollow tubular structure, and its cross section is rectangular when viewed along the extension direction of the pipeline. Its length and width match the size of the channel, so that its four walls are completely in contact with the channel wall.

[0056] The hollow design of the structural member 22 allows it to provide a certain space in the wafer transmission channel 23 to accommodate specific uses, such as wafer transmission or other applications.

[0057] Therefore, to go further, the entire structural member 22 may have a certain thickness, but not too thick, and the inner size of the hollow structure of the structural member 22 should be larger than the size of the wafer to ensure that the wafer can be transferred out of the structural member 22.

[0058] The material and manufacturing process of the structural member 22 may vary depending on the application scenario. For example, materials such as metal and ceramic may be used, and processing techniques such as turning, injection molding, and engraving may be used.

[0059] Regardless of the material and process used, the design purpose of this structural component is to provide an additional fixation and protection in the channel to ensure the safety and stability of the channel.

[0060] The design of the structural member 22 can also be customized according to actual needs. For example, the length, width and height of the structural member can be designed according to the actual size and requirements of the channel to meet actual use requirements.

[0061] Figure 5 The structure diagram of the half-moon ring ceramic member according to an embodiment of the utility model is disclosed. Figure 4 and Figure 5 As shown, the structural member 22 is provided with one or more step structures at the connection with the half-moon ring ceramic member 21;

[0062] Both ends of the half-moon ring ceramic member 21 are provided with protrusions or depressions that match the steps;

[0063] The half-moon ring ceramic component 21 and the structural component 22 are connected in an inlaid manner through the cooperation of the step and the protrusion or the depression.

[0064] In some embodiments, the cross section of the step structure is trapezoidal, triangular, semicircular, rectangular or other shapes to increase the strength and stability of the connection.

[0065] The connection is free of gaps, smooth and flat, and has no looseness. The inlay connection method has high stability and reliability and can withstand large loads and impact forces.

[0066] In this embodiment, the connection between the half-moon ring ceramic member 21 and the structural member 22 is not filled with any sealing material. However, in some other embodiments, the connection between the half-moon ring ceramic member 21 and the structural member 22 may also be filled with sealing material.

[0067] The specific form of the mosaic connection can be determined according to the specific application scenario and material selection.

[0068] In some embodiments, the mosaic connection is a curved surface connection. In this case, the structural member 22 is provided with one or more curved surface structures at the connection with the half-moon ring ceramic member 21;

[0069] The two ends of the half-moon ring ceramic member 21 are correspondingly provided with curved surface shapes matching the curved surface;

[0070] The half-moon ring ceramic component 21 and the structural component 22 are connected in an inlaid manner by the mutual cooperation of the curved surface shapes.

[0071] Figure 6 A top view of a semiconductor reaction chamber of the prior art is disclosed, such as Figure 6 As shown, during the use of the semiconductor reaction chamber in the prior art, the wafer film is prone to poor particle performance in the channel opening direction of the wafer transfer channel 13 .

[0072] The generation of this problem has a certain relationship with the gas dead zone and low temperature in the direction of the film transmission channel. Especially in the triangular dead zone 14 between the half-moon ring ceramic part 11 and the valve port side of the film transmission channel 13 of the reaction chamber, it is easier to hide particles.

[0073] Figure 7 A top view of a semiconductor reaction chamber according to an embodiment of the present invention is disclosed. Figure 7 As shown, the semiconductor reaction chamber of the present invention is provided with a structure 22 in the valve port direction of the chip transmission channel 23 of the reaction chamber.

[0074] A tight connection is formed between the newly added structural member 22 and the half-moon ring ceramic member 21. This improvement eliminates the dead zone existing in the valve port direction of the transmission channel 23, and further reduces the risk of particle generation.

[0075] The utility model provides a structural member, which is a hollow structure and is arranged in a film transmission channel of a semiconductor reaction chamber;

[0076] The connection between the structural member and the half-moon ring ceramic member is an inlay connection.

[0077] The specific structure of the above-mentioned structural parts has been described in detail in the semiconductor reaction chamber proposed in the present invention, and will not be repeated here.

[0078] The utility model proposes a semiconductor reaction chamber and a structural component, wherein the structural component is arranged in the direction of the wafer transfer channel valve port of the reaction chamber, so that a tight mosaic connection is formed between the structural component and the half-moon ring ceramic component, thereby effectively preventing the half-moon ring ceramic component from rotating, thereby avoiding the risk of adverse effects on wafer transmission, eliminating the dead zone in the direction of the wafer transfer channel valve port, reducing the risk of particle generation, improving the quality of wafer film, and significantly improving the efficiency and stability of semiconductor manufacturing.

[0079] In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "inside", "outside", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present invention.

[0080] As stated in this application and claims, unless the context clearly indicates an exception,

[0081] The words "a", "an", "a kind" and / or "the" do not refer to the singular, but may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list, and the method or device may also include other steps or elements.

[0082] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, unless otherwise specified, "plurality" means two or more, unless otherwise clearly specified.

[0083] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.

[0084] The above embodiments are provided for persons familiar with the art to implement or use the present invention. Personnel familiar with the art can make various modifications or changes to the above embodiments without departing from the utility model concept of the present invention. Therefore, the protection scope of the present invention is not limited to the above embodiments, but should be the maximum scope of the innovative features mentioned in the claims.

Claims

1. A semiconductor reaction chamber, characterized in that: It contains at least one half-moon ring ceramic part and one structural part: The half-moon ring ceramic piece is arranged on the body of the chamber and has a semicircular structure; The opening position of the half-moon ring ceramic piece corresponds to the film transmission channel; The structural member is a hollow structure and is arranged in the film transmission channel; Wherein, the connection between the half-moon ring ceramic component and the structural component is an inlay connection.

2. The semiconductor reaction chamber according to claim 1, characterized in that: The structural member has an outer contour that matches the shape of the film transmission channel.

3. The semiconductor reaction chamber according to claim 1, characterized in that: The structural member is a tubular structure, and the cross section along the extension direction of the pipeline is rectangular.

4. The semiconductor reaction chamber according to claim 1, characterized in that: The size of the hollow structure of the structural member is larger than that of the wafer.

5. The semiconductor reaction chamber according to claim 2, characterized in that: The structural member has a side connected to the half-moon ring ceramic member in an arc shape, and is combined with the half-moon ring ceramic member to form a circle.

6. The semiconductor reaction chamber according to claim 1, characterized in that: The structural member is provided with one or more step structures at the connection with the half-moon ring ceramic member; Both ends of the half-moon ring ceramic piece are provided with protrusions or depressions that match the steps; The half-moon ring ceramic part and the structural part are connected in an inlaid manner through the cooperation of the step and the protrusion or the depression.

7. The semiconductor reaction chamber according to claim 6, characterized in that: The cross section of the step structure is trapezoidal, triangular, semicircular or rectangular.

8. The semiconductor reaction chamber according to claim 1, characterized in that: The structural member is provided with one or more curved surface structures at the connection with the half-moon ring ceramic member; The two ends of the half-moon ring ceramic piece are correspondingly provided with curved surface shapes matching the curved surface; The half-moon ring ceramic component and the structural component are connected in an inlaid manner through the mutual cooperation of the curved surface shapes.

9. The semiconductor reaction chamber according to claim 1, characterized in that: The structural member is arranged in the direction of the valve port of the film transmission channel of the reaction chamber.

10. A structural member, characterized in that: The structural member is a hollow structure and is arranged in the film transmission channel of the semiconductor reaction chamber; The connection between the structural member and the half-moon ring ceramic member is an inlay connection.

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