Semiconductor light amplification device

Abstract

The utility model relates to the technical field of semiconductor optical amplifiers, in particular to a semiconductor optical amplification device. Comprising an optical splitter, a first semiconductor optical chip, a first reflector, a second reflector, a second semiconductor optical chip and a beam combiner, and the optical splitter is used for splitting input light into a first light beam and a second light beam; the first semiconductor optical chip and the first reflector are sequentially arranged along a light path of the first light beam; the first semiconductor optical chip is electrified to perform gain amplification on the first light beam; the first reflector is used for reflecting the first light beam after gain amplification; the second reflector and the second semiconductor optical chip are sequentially arranged along the light path of the second light beam; the second reflector is used for reflecting the second light beam into the second semiconductor optical chip, and the second semiconductor optical chip is electrified to perform gain amplification on the second light beam; the beam combiner is arranged at the tail end of the light path of the first light beam and the tail end of the light path of the second light beam and used for combining and emitting the first light beam and the second light beam. According to the utility model, the output optical power can reach 20dBm.

Description

Technical Field

[0001] The utility model relates to the technical field of optical amplifiers, in particular to a semiconductor optical amplifier device. Background Art

[0002] The existing semiconductor optical amplifier device is at the single chip level. After gain amplification of the input light, the upper limit of the optical power output is generally around 17dBm. During the device assembly process, due to optical path insertion loss and coupling loss, the final output optical power of the device is less than 17dBm. Therefore, the optical output of a single semiconductor optical amplifier chip is far from meeting the actual optical power requirements. Utility Model Content

[0003] The technical problem to be solved by the embodiments of the utility model is to provide a semiconductor optical amplifier device to solve the problem in the prior art that the optical output of a single semiconductor optical amplifier chip is far from meeting the actual optical power requirement.

[0004] The utility model discloses a semiconductor light amplifying device, comprising: a beam splitter, a first semiconductor light chip, a first reflector, a second reflector, a second semiconductor light chip and a beam combiner, wherein the beam splitter is used to split input light into a first light beam and a second light beam; the first semiconductor light chip and the first reflector are arranged in sequence along the light path of the first light beam; the first semiconductor light chip is used to perform gain amplification on the first light beam after being powered on; the first reflector is used to reflect the first light beam after gain amplification; the second reflector and the second semiconductor light chip are arranged in sequence along the light path of the second light beam; the second reflector is used to reflect the second light beam into the second semiconductor light chip, and the second semiconductor light chip is used to perform gain amplification on the second light beam after being powered on; the beam combiner is arranged at the ends of the light paths of the first light beam and the second light beam, and is used to combine the first light beam and the second light beam and then emit them.

[0005] Optionally, along the optical path of the first light beam, a first isolator is provided between the beam splitter and the first semiconductor optical chip, and a second isolator is provided between the first semiconductor optical chip and the first reflector.

[0006] Optionally, along the optical path of the first light beam, a first lens is disposed between the first isolator and the first semiconductor optical chip, and a second lens is disposed between the first semiconductor optical chip and the second isolator.

[0007] Optionally, along the optical path of the second light beam, a third isolator is provided between the second reflector and the second semiconductor optical chip, and a fourth isolator is provided between the second semiconductor optical chip and the beam combiner.

[0008] Optionally, along the optical path of the second light beam, a third lens is provided between the third isolator and the second semiconductor optical chip, and a fourth lens is provided between the second semiconductor optical chip and the fourth isolator.

[0009] Optionally, both the first reflector and the second reflector are total reflection mirrors.

[0010] Optionally, the first isolator, the second isolator, the third isolator and the fourth isolator are double-stage isolators or single-stage isolators.

[0011] Optionally, the beam combiner and the optical path of the second light beam are colinear.

[0012] Optionally, both the first semiconductor optical chip and the second semiconductor optical chip are LD chips.

[0013] Compared with the prior art, the semiconductor optical amplifier device provided by the embodiment of the utility model has the following beneficial effects: the beam splitter divides the input light into a first light beam and a second light beam; a first semiconductor optical chip and a first reflector are arranged along the optical path of the first light beam, the first semiconductor optical chip is used to gain amplify the first light beam after power is turned on, and the first light beam after gain amplification is reflected to the beam combiner through the first reflector, and at the same time, a second reflector and a second semiconductor optical chip are arranged in sequence along the optical path of the second light beam, the second reflector is used to reflect the second light beam to the second semiconductor optical chip, and the second semiconductor optical chip is used to gain amplify the second light beam after power is turned on; the second light beam after gain amplification is emitted to the beam combiner, and the first light beam and the second light beam after gain amplification are integrated into a beam of parallel light output under the action of the beam combiner. The semiconductor optical amplifier device of this embodiment has a simple structure and is easy to assemble. The first semiconductor optical chip and the second semiconductor optical chip work independently, which improves the upper limit of the gain amplification of the light beam using a single semiconductor optical chip, and the output optical power can be changed by adjusting the current size loaded on the first semiconductor optical chip and the second semiconductor optical core. The output optical power of the embodiment of the utility model can reach 20dBm. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The technical solution of the utility model will be further described in detail below with reference to the accompanying drawings and embodiments, in which:

[0015] Figure 1 It is a schematic diagram of the overall structure of a semiconductor optical amplifier device provided in an embodiment of the utility model.

[0016] The reference numerals in the figures are:

[0017] 10. Splitter; 100. Input light; 101. First light beam; 102. Second light beam; 20. First semiconductor optical chip; 30. First reflector; 40. Second reflector; 50. Second semiconductor optical chip; 60. Combiner; 01. First isolator; 02. Second isolator; 03. Third isolator; 04. Fourth isolator; 001. First lens; 002. Second lens; 003. Third lens; 004. Fourth lens. DETAILED DESCRIPTION

[0018] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. Now, in conjunction with the accompanying drawings, a preferred embodiment of the present utility model is described in detail.

[0019] The present invention provides a semiconductor optical amplifier device. Figure 1 , including: a beam splitter 10, a first semiconductor optical chip 20, a first reflector 30, a second reflector 40, a second semiconductor optical chip 50 and a beam combiner 60, the beam splitter 10 is used to split the input light 100 into a first light beam 101 and a second light beam 102; the first semiconductor optical chip 20 and the first reflector 30 are arranged in sequence along the optical path of the first light beam 101; the first semiconductor optical chip 20 is used to gain amplify the first light beam 101 after power is turned on; the first reflector 30 is used to reflect the gain-amplified first light beam 101; the second reflector 40 and the second semiconductor optical chip 50 are arranged in sequence along the optical path of the second light beam 102; the second reflector 40 is used to reflect the second light beam 102 into the second semiconductor optical chip 50, and the second semiconductor optical chip 50 is used to gain amplify the second light beam 102 after power is turned on; the beam combiner 60 is arranged at the ends of the optical paths of the first light beam 101 and the second light beam 102, and is used to combine the first light beam 101 and the second light beam 102 and then emit them.

[0020] In this embodiment, the beam splitter 10 is used to split the input light 100 into a first light beam 101 and a second light beam 102; a first semiconductor optical chip 20 and a first reflector 30 are arranged along the optical path of the first light beam 101, the first semiconductor optical chip 20 is used to gain amplify the first light beam 101 after power is turned on, and the first light beam 101 after gain amplification is reflected to the combiner 60 through the first reflector 30, and a second reflector 40 and a second semiconductor optical chip 50 are arranged in sequence along the optical path of the second light beam 102, the second reflector 40 is used to reflect the second light beam 102 to the second semiconductor optical chip 50, and the second semiconductor optical chip 50 is used to gain amplify the second light beam 102 after power is turned on; the second light beam 102 after gain amplification is emitted to the combiner 60, and under the action of the combiner 60, the first light beam 101 and the second light beam 102 after gain amplification are integrated into a beam of parallel light for output. The semiconductor optical amplifier device of the present embodiment has a simple structure and is easy to assemble. The first semiconductor optical chip 20 and the second semiconductor optical chip 50 work independently, which improves the upper limit of light beam gain amplification using a single semiconductor optical chip. The output optical power can be changed by adjusting the current loaded on the first semiconductor optical chip 20 and the second semiconductor optical chip 50, so that the output optical power of the semiconductor optical amplifier device of the present embodiment can reach 20dBm.

[0021] As a preferred solution of this embodiment, please continue to refer to Figure 1 Along the optical path of the first light beam 101 , a first isolator 01 is provided between the beam splitter 10 and the first semiconductor optical chip 20 , and a second isolator 02 is provided between the first semiconductor optical chip 20 and the first reflector 30 .

[0022] The arrangement of the first isolator 01 and the second isolator 02 can prevent the first light beam 101 from reflecting and causing standing waves during propagation along the optical path, and the parallel light beam in the first semiconductor optical chip 20 will not interfere with the input light 100 due to the reverse blocking effect of the first isolator 01. This improves the continuous stability of the first light beam 101 propagating in the optical path, thereby improving the working stability and continuity of the semiconductor optical amplifier device.

[0023] As a preferred solution of this embodiment, please continue to refer to Figure 1 Along the optical path of the first light beam 101 , a first lens 001 is provided between the first isolator 01 and the first semiconductor optical chip 20 , and a second lens 002 is provided between the first semiconductor optical chip 20 and the second isolator 02 .

[0024] The first lens 001 and the second lens 002 are used to converge the first light beam 101 along the propagation direction to improve the propagation efficiency of the first light beam 101; at the same time, the second lens 002 adjusts the divergent light emitted by the first semiconductor optical chip 20 to parallel light output, so that the first reflector 30 can adjust its position according to the optical path of the first light beam 101, so as to improve the reflection efficiency of the first reflector 30, thereby improving the efficiency and stability of light propagation. Both the first lens 001 and the second lens 002 can be collimating lenses.

[0025] As a preferred solution of this embodiment, please continue to refer to Figure 1 Along the optical path of the second light beam 102 , a third isolator 03 is provided between the second reflector 40 and the second semiconductor optical chip 50 , and a fourth isolator 04 is provided between the second semiconductor optical chip 50 and the combiner 60 .

[0026] The third isolator 03 and the fourth isolator 04 are provided to prevent the second light beam 102 from reflecting and causing standing waves during propagation along the optical path, and the parallel light beam in the second semiconductor optical chip 50 will not interfere with the input light 100 due to the reverse blocking effect of the third isolator 03. This improves the continuous stability of the second light beam 102 propagating in the optical path, thereby improving the working stability and continuity of the semiconductor optical amplifier device.

[0027] As a preferred solution of this embodiment, please continue to refer to Figure 1 Along the optical path of the second light beam 102 , a third lens 003 is provided between the third isolator 03 and the second semiconductor optical chip 50 , and a fourth lens 004 is provided between the second semiconductor optical chip 50 and the fourth isolator 04 .

[0028] The third lens 003 and the fourth lens 004 are used to converge the second light beam 102 along the propagation direction to improve the propagation efficiency of the second light beam 102. At the same time, the fourth lens 004 adjusts the divergent light emitted by the second semiconductor optical chip 50 to parallel light output to improve the stability of the optical path propagation of the second light beam 102. Both the third lens 003 and the fourth lens 004 can be collimating lenses.

[0029] As a preferred solution of this embodiment, both the first reflector 30 and the second reflector 40 are total reflection mirrors.

[0030] Among them, the first reflector 30 uses a total reflection mirror to reflect the gain-amplified first light beam 101 completely into the combiner 60, reducing the optical loss of the first light beam 101 and ensuring the optical power of the first light beam 101 entering the combiner 60; the second reflector 40 uses a total reflection mirror to reflect the second light beam 102 completely into the second semiconductor optical chip 50, reducing the optical loss of the second light beam 102, and further ensuring the optical power of the second light beam 102 entering the combiner 60, which is used to ensure the output optical power of the combiner 60.

[0031] As a preferred solution of this embodiment, the first isolator 01, the second isolator 02, the third isolator 03 and the fourth isolator 04 are double-stage isolators or single-stage isolators.

[0032] Among them, the selection of the first isolator 01, the second isolator 02, the third isolator 03 and the fourth isolator 04 can be selected according to the actual application scenario. The bipolar isolator has the advantage of high isolation. Under the condition that both the application environment and the size are required, the bipolar isolator can be given priority. When the application environment is limited, a single-stage isolator can be selected. No specific limitation is made in this embodiment, and adaptive adjustment can be made according to the actual application environment.

[0033] As a preferred solution of this embodiment, the optical paths of the beam combiner 60 and the second light beam 102 are colinear.

[0034] The arrangement relationship between the above-mentioned beam combiner 60 and the optical path of the second light beam 102 enables the beam combiner 60 to receive the first light beam 101 and the second light beam 102 at the same time with little light loss.

[0035] As a preferred solution of this embodiment, both the first semiconductor optical chip 20 and the second semiconductor optical chip 50 are LD chips.

[0036] It should be understood that the above embodiments are only used to illustrate the technical solutions of the present utility model rather than to limit it. For those skilled in the art, the technical solutions described in the above embodiments can be modified, or some of the technical features therein can be replaced by equivalents; and all these modifications and replacements should fall within the scope of protection of the claims attached to the present utility model.

Claims

1. A semiconductor optical amplifier device, characterized in that: include: A beam splitter (10) for splitting an input light (100) into a first light beam (101) and a second light beam (102); A first semiconductor optical chip (20) and a first reflector (30) are sequentially arranged along the optical path of the first light beam (101); the first semiconductor optical chip (20) is used to perform gain amplification on the first light beam (101) after being powered on, and the first reflector (30) is used to reflect the first light beam (101) after gain amplification; A second reflector (40) and a second semiconductor optical chip (50) are sequentially arranged along the optical path of the second light beam (102); the second reflector (40) is used to reflect the second light beam (102) to the second semiconductor optical chip (50); and the second semiconductor optical chip (50) is used to perform gain amplification on the second light beam (102) after being powered on; The beam combiner (60) is arranged at the ends of the optical path of the first light beam (101) and the optical path of the second light beam (102), and is used for combining the first light beam (101) and the second light beam (102) and emitting the combined light.

2. The semiconductor optical amplifier device according to claim 1, wherein: Along the optical path of the first light beam (101), a first isolator (01) is provided between the beam splitter (10) and the first semiconductor optical chip (20); and a second isolator (02) is provided between the first semiconductor optical chip (20) and the first reflector (30).

3. The semiconductor optical amplifier device according to claim 2, wherein: Along the optical path of the first light beam (101), a first lens (001) is provided between the first isolator (01) and the first semiconductor optical chip (20), and a second lens (002) is provided between the first semiconductor optical chip (20) and the second isolator (02).

4. The semiconductor optical amplifier device according to claim 3, wherein: Along the optical path of the second light beam (102), a third isolator (03) is provided between the second reflector (40) and the second semiconductor optical chip (50), and a fourth isolator (04) is provided between the second semiconductor optical chip (50) and the beam combiner (60).

5. The semiconductor optical amplifier device according to claim 4, characterized in that: Along the optical path of the second light beam (102), a third lens (003) is provided between the third isolator (03) and the second semiconductor optical chip (50), and a fourth lens (004) is provided between the second semiconductor optical chip (50) and the fourth isolator (04).

6. The semiconductor optical amplifier device according to claim 5, characterized in that The first lens (001), the second lens (002), the third lens (003) and the fourth lens (004) are all collimating lenses.

7. The semiconductor optical amplifier device according to claim 1, wherein: The first reflector (30) and the second reflector (40) are both total reflection mirrors.

8. The semiconductor optical amplifier device according to claim 4, wherein: The first isolator (01), the second isolator (02), the third isolator (03) and the fourth isolator (04) are double-stage isolators or single-stage isolators.

9. The semiconductor optical amplifier device according to claim 1, wherein: The optical path of the beam combiner (60) and the optical path of the second light beam (102) are colinear.

10. The semiconductor optical amplifier device according to claim 1, wherein: The first semiconductor optical chip (20) and the second semiconductor optical chip (50) are both LD chips.

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