MPCVD microwave single crystal carrying device and growing furnace provided with carrying device
By designing a loading device for MPCVD microwave single crystal growth, the combined structure of the mold and mold hole is used to fix the microwave single crystal, which solves the problem of changes in the position of the microwave single crystal during the movement. Sex and consistency.
Patent Information
- Application Number
- CN202420289326.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-02-08
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2034-02-08
AI Technical Summary
During the growth of MPCVD microwave single crystals, microwave single crystals are prone to change positions during the transfer process, resulting in uneven growth quality.
Design an MPCVD microwave single crystal loading device, including a tray and a detachable mold. There are several mold holes in the mold to fix the microwave single crystal to ensure that its position remains unchanged during the transfer process.
Through this loading device, the position of microwave single crystal can be fixed during the movement process to avoid changes in the position and ensure the uniformity and consistency of the microwave single crystal during growth.
Smart Images
Figure CN222389965U_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the technical field of auxiliary equipment for MPCVD microwave single crystal growth, and in particular, relates to an MPCVD microwave single crystal loading device and a growth furnace equipped with the loading device. Background Art
[0002] MPCVD (Microwave Plasma Chemical Vapor Deposition) is a microwave plasma chemical vapor deposition device, which is mainly used to grow microwave single crystal diamond in batches. When growing existing MPCVD microwave single crystals, tweezers are used to place microwave single crystals one by one on a flat molybdenum drag. Each microwave single crystal needs to be stacked first, and then transported to the MPVCD furnace to start growth. However, during the transportation process, microwave single crystals are easy to move on the flat molybdenum drag, and even bumps may occur. It cannot be guaranteed that the microwave single crystals entering the furnace body are evenly placed on the flat molybdenum drag according to the original stacking position. This will cause the relative positions of the microwave single crystals to change, resulting in uneven position intervals, which will affect the growth quality during the growth process. Summary of the invention
[0003] The present application provides an MPCVD microwave single crystal loading device and a growth furnace equipped with the loading device, which solves the technical problem in the prior art that the relative positions of microwave single crystals are easily changed when the microwave single crystals are placed and then moved into the furnace.
[0004] In order to solve at least one of the above technical problems, the technical solution adopted in this application is:
[0005] An MPCVD microwave single crystal loading device comprises a tray, wherein a mold for placing microwave single crystals is arranged on the upper end surface of the tray, a plurality of mold holes are constructed in the mold, and the mold and the tray are detachably arranged; after the microwave single crystals are placed in the mold holes, the mold can control the tray carrying the microwave single crystals to move to a target position, and then separate the mold from the tray so that the microwave single crystals are evenly distributed on the upper end surface of the tray.
[0006] Furthermore, the mold holes are through-hole structures, and adjacent mold holes are arranged on the tray at intervals.
[0007] Furthermore, the mold is constructed as a circular structure; the circumscribed circles of the placement areas formed by all the mold holes are respectively arranged cocentrically with the mold and the tray.
[0008] Furthermore, the mold and the mold holes are configured at the same height; and all the mold holes have the same structure and are compatible with the appearance of the microwave single crystal.
[0009] Furthermore, the mold is placed on the upper end surface of the tray and directly contacts the upper end surface of the tray.
[0010] Furthermore, part of the lower section of the mold is embedded in the tray.
[0011] Furthermore, the mold is embedded in the tray to a depth of 0.3-5 mm.
[0012] Furthermore, the height of the mold may be lower than, equal to, or higher than the thickness of the microwave single crystal.
[0013] Furthermore, it also includes a cover body that cooperates with the tray, and all the molds are covered by the cover body.
[0014] A growth furnace is provided with the above-mentioned loading device.
[0015] The MPCVD microwave single crystal loading device designed by the present application has a simple structure and good safety. The microwave single crystal can be placed arbitrarily in the prefabricated mold hole; there is no need to deliberately maintain the spacing between the microwave single crystals, and it does not affect the growth of the microwave single crystal after entering the furnace. In addition, the placement position is fixed during the transfer process, and there will be no deviation or collision, thus ensuring the uniformity and consistency of the subsequent microwave single crystal growth. The present application also proposes a growth furnace equipped with the loading device. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] Figure 1 is a three-dimensional diagram of a microwave single crystal loading device according to an embodiment of the present application;
[0017] Figure 2 is a top view of a microwave single crystal loading device according to an embodiment of the present application;
[0018] Figure 3 is a top view of a microwave single crystal loading device according to another embodiment of the present application;
[0019] Figure 4 is a top view of a microwave single crystal loading device according to another embodiment of the present application;
[0020] Figure 5 is a cross-sectional view of a microwave single crystal loading device according to an embodiment of the present application;
[0021] Figure 6 is a cross-sectional view of a microwave single crystal loading device according to another embodiment of the present application;
[0022] Figure 7 It is a cross-sectional view of a microwave single crystal loading device with a cover according to an embodiment of the present application.
[0023] In the figure:
[0024] 10. Tray 20. Mold 30. Mold hole
[0025] 40, cover 50, microwave single crystal DETAILED DESCRIPTION
[0026] The present application is described in detail below with reference to the accompanying drawings and specific embodiments.
[0027] This embodiment provides an MPCVD microwave single crystal loading device, such as Figure 1 As shown, at least a tray 10 is included, and a mold 20 for placing microwave single crystals is constructed on the upper end surface of the tray 10, and a plurality of mold holes 30 are constructed in the mold 20, and the mold holes 30 are set through the mold 20, that is, they must be through-hole structures. The mold 20 and the tray 10 are detachably matched. After the microwave single crystal is placed in the mold hole 30, the mold 20 can control the tray 10 carrying the microwave single crystal to move to the target position, and then separate the mold 20 from the tray 10, so that the microwave single crystals can be evenly distributed on the upper end surface of the tray 10, so that the positioning of all microwave single crystals can be completed, and the microwave single crystals will not be displaced or misplaced during the transfer process, so that the microwave single crystals entering the furnace body can be evenly and stably placed on the flat molybdenum tray 10 according to the original stacking position, so as to ensure the quality during the growth process.
[0028] like Figure 2-4 As shown, adjacent die holes 30 are evenly spaced and arranged on the die 20, and the spacing between two adjacent die holes 30 in the horizontal or vertical direction is 0.3-1.0 mm. In this embodiment, the tray 10 is a circular flat molybdenum plate; of course, it can also be a square structure or a rectangular structure or other types of structures, as long as it is a flat molybdenum plate structure. The outer diameter of the die 20 is 60-120 mm, wherein the number of die holes 30 can be arranged in 30-100, and the number of die holes 30 in all the drawings in this application is only a schematic diagram.
[0029] The microwave single crystal can be placed based on the position of the mold hole 30 in the mold 20 and fixed in the mold hole 30. Since the mold 20 is a whole, its weight is heavier than that of a single microwave single crystal, and it is not easy to shake, so it is easier to stably place the microwave single crystal in the mold hole 30, thereby ensuring that the position of the microwave single crystal will not move during the transfer process, and it is stably embedded in the mold hole 30. When it is sent to the target position in the furnace, the mold 20 is removed from the mold 20 without affecting the subsequent growth surface of the microwave single crystal, and it can also avoid the collision of adjacent microwave single crystals during the transfer process to cause quality problems.
[0030] The mold 20 is constructed as a circular structure, and the circumscribed circle of the placement area formed by all the mold holes 30 is as follows: Figure 2-4 The double-dotted circle in the figure is co-centered with the mold 20 and the tray 10. Since all the mold holes 30 are built into the mold 20, and the matching structure of all the mold holes 30 is as shown in FIG. Figure 2-4 As shown, the placement area formed by all the mold holes 30 is irregular, and the circumscribed circle of the placement area is smaller than the outer circle of the mold 20. When the mold 20 is matched with the tray 10, a track circle matching the outer circle of the mold 20 can be set on the upper end surface of the tray 10, so as to ensure that the circumscribed circles of the mold 20 and the tray 10 are cocentrically arranged.
[0031] When the tray 10 is a rectangle, square or other shape (omitted in the drawing), in order to ensure the consistency of the growth of the microwave single crystal, the circumscribed circle of the placement area is cocentrically constructed with the circumscribed circle of the tray 10, and the center of the placement area is located at the center of the tray 10.
[0032] In this embodiment, the tray 10 has a circular shape, and the mold 20 also has a circular structure. Regardless of the arrangement of the placement area, the structure of all mold holes 30 is the same and is compatible with the shape of the microwave single crystal. In this embodiment, the diameter of the mold 20 is determined based on the number of mold holes 30 and their arrangement structure. Regardless of the number of mold holes 30, the structure of the mold 20 is circular; at the same time, the structure of the microwave single crystal is square, and accordingly, the structure of the mold holes 30 is also square.
[0033] like Figure 2 As shown, all the mold holes 30 are arranged side by side and in the same row up and down, forming a horizontal rectangular structure and a vertical rectangular structure, and the two rectangular structures intersect so that some of the mold holes 30 in the middle are stacked, and the area enclosed by them is the placement area. In order to improve the stability of the later growth of the microwave single crystal, the circumscribed circle of the placement area is set cocentrically with the mold 20 and the tray 10 body.
[0034] like Figure 3 As described above, all the die holes 30 are arranged side by side and staggered, and the distance of the vertical staggering of all the die holes 30 is the same, that is, the distance of the vertical staggering of all the die holes 30 is half of the width of the die holes 30. Of course, the staggering distance can also be other multiples of the width of the die holes 30, as long as they are arranged evenly and symmetrically, the requirements can be met, and there is no specific limitation here. At this time, the circumscribed circle of the placement area formed by all the die holes 30 is arranged cocentrically with the mold 20 and the tray 10 body.
[0035] like Figure 4 As shown, all the mold holes 30 form a square placement area, and the placement area is located at the center of the tray 10. At this time, the circumscribed circle of the placement area formed by all the mold holes 30 is not only arranged concentrically with the mold 20, but also concentrically with the tray 10 body.
[0036] When placing the microwave single crystals, the microwave single crystals can be placed in each mold hole 30 one by one, or evenly spaced in each mold hole 30 . The placement can be based on different needs and is not specifically limited here.
[0037] like Figure 5 As shown, no matter what arrangement of the structure of the mold hole 30, the height H of the mold 20 is the height of the mold hole 30, and the height H of the mold 20 can be lower than the thickness of the microwave single crystal, or the same as the thickness of the microwave single crystal, that is, its height, or higher than the thickness of the microwave single crystal. Regardless of how the height of the mold 20 is set, the microwave single crystal can be stably fixed on the upper end surface of the tray 10, and will not move during the transfer process; it is also convenient to separate the mold 20 from the tray 10, without affecting the position of the microwave single crystal, nor affecting the subsequent growth of the microwave single crystal, and can also ensure that adjacent microwave single crystals will not collide during the transfer process.
[0038] like Figure 5 As shown, the mold 20 is placed on the upper end surface of the tray 10 and directly contacts the upper end surface of the tray 10. This structure is simple and easy to operate and implement, and it is possible to ensure that the microwave single crystal can be stably placed on the tray 10 without adding other structures to the tray 10.
[0039] like Figure 6 As shown, the lower end of the mold 20 is embedded in the upper end surface of the tray 10, and the depth h of the mold 20 embedded in the tray 10 is 0.3-5mm. In this structure, at least one end of the microwave single crystal is suspended upward and will not interfere with the position of its growing end surface. The mold 20 is embedded in the tray 10 in a circular structure. There is no need to change the structure of the tray 10 body. Only a placement ring is provided on its upper surface to stably place the mold 20 on the tray 10.
[0040] like Figure 7 As shown, in order to protect the microwave single crystal from being contaminated by dust during transportation, a cover body 40 is also included to cooperate with the tray 10, and all molds 20 are covered by the cover body 40. Due to the shielding of the cover body 40, no dust will fall on the microwave single crystal, thereby ensuring the purity of the microwave single crystal.
[0041] A growth furnace is provided with the above-mentioned loading device.
[0042] The MPCVD microwave single crystal loading device designed by the present application has a simple structure and good safety. The microwave single crystal can be placed arbitrarily in the prefabricated mold hole; there is no need to deliberately maintain the spacing between the microwave single crystals, and it does not affect the growth of the microwave single crystal after entering the furnace. In addition, the placement position is fixed during the transfer process, and there will be no deviation or collision, thus ensuring the uniformity and consistency of the subsequent microwave single crystal growth. The present application also proposes a growth furnace equipped with the loading device.
[0043] The above detailed description of the embodiments of the present application is only a preferred embodiment of the present application and cannot be considered to limit the scope of implementation of the present application. All equivalent changes and improvements made within the scope of the present application should still fall within the scope of the patent coverage of the present application.
Claims
1. An MPCVD microwave single crystal loading device, characterized in that: It comprises a tray, on the upper end surface of which is provided a mold for placing microwave single crystals, in which are constructed a plurality of mold holes, and the mold and the tray are detachably arranged; after the microwave single crystals are placed in the mold holes, the mold can control the tray carrying the microwave single crystals to move to a target position, and then separate the mold from the tray, so that the microwave single crystals are evenly distributed on the upper end surface of the tray.
2. The MPCVD microwave single crystal loading device according to claim 1, characterized in that: The die holes are through-hole structures, and adjacent die holes are arranged on the tray at intervals.
3. The MPCVD microwave single crystal loading device according to claim 1 or 2, characterized in that: The mold is constructed as a circular structure; the circumscribed circles of the placement areas formed by all the mold holes are respectively arranged cocentrically with the mold and the tray.
4. The MPCVD microwave single crystal loading device according to claim 3, characterized in that: The mold and the mold holes are arranged at the same height; and all the mold holes have the same structure and are adapted to the shape of the microwave single crystal.
5. The MPCVD microwave single crystal loading device according to claim 1, characterized in that: The mold is placed on the upper end surface of the tray and directly contacts the upper end surface of the tray.
6. The MPCVD microwave single crystal loading device according to claim 1, characterized in that: A portion of the lower section of the mold is sunk into the tray.
7. The MPCVD microwave single crystal loading device according to claim 6, characterized in that: The mold is embedded in the tray to a depth of 0.3-5 mm.
8. The MPCVD microwave single crystal loading device according to any one of claims 1 to 7, characterized in that: The height of the mold may be lower than, equal to, or higher than the thickness of the microwave single crystal.
9. An MPCVD microwave single crystal loading device according to any one of claims 1-2 and 4-8, characterized in that: It also includes a cover body matched with the tray, and all the molds are covered by the cover body.
10. A growth furnace, characterized in that: A loading device as described in any one of claims 1 to 9 is provided.