Thin film deposition equipment

Abstract

The utility model relates to thin film deposition equipment. The thin film deposition equipment comprises a body part, a rotating part and a carrier, the body part is provided with a reaction cavity; the rotating part comprises a driving part and a rotating part, the rotating part comprises a shaft part and a rotary table, the rotary table is located in the reaction cavity, one end of the shaft part is connected with the rotary table, the other end of the shaft part extends out of the reaction cavity and is connected with the driving part, and the driving part can drive the shaft part to drive the rotary table to rotate; the carrier is placed on the rotary table and can rotate along with the rotary table; the rotating piece is further provided with a cleaning cavity, the outer wall of the cleaning cavity is further provided with a purging hole, and the outer end of the shaft part is further provided with a purging inlet communicating with the cleaning cavity. According to the thin film deposition equipment, the cleanliness of the interior of the thin film deposition equipment can be improved, the substrate coating quality and efficiency are guaranteed, and the influence of dust cleaning on the production efficiency is reduced.

Description

Technical Field

[0001] The present application relates to the technical field of thin film deposition, and in particular to a thin film deposition device. Background Art

[0002] The main processes for coating the surface of substrates and other workpieces include PVD (Physical Vapor Deposition), ALD (Atomic Layer Deposition) and CVD (Chemical Vapor Deposition). In the process of coating, a large amount of dust will inevitably be generated. The dust is easily adsorbed in various places in the reaction chamber, affecting the coating quality and efficiency of the workpiece, and easily causing pipeline blockage. At the same time, dust cleaning is difficult, time-consuming and laborious, and continuous shutdown for maintenance will also affect production efficiency.

[0003] Therefore, how to improve the cleanliness inside the thin film deposition equipment, ensure the quality and efficiency of substrate coating, and reduce the impact of dust cleaning on production efficiency is a technical problem that technical personnel in this field urgently need to solve. Utility Model Content

[0004] The purpose of the present application is to provide a thin film deposition device that can improve the cleanliness inside the thin film deposition device, ensure the quality and efficiency of substrate coating, and reduce the impact of dust cleaning on production efficiency.

[0005] In order to solve the above technical problems, the present application provides a thin film deposition device, including a main body, a rotating part and a carrier; the main body is provided with a reaction chamber; the rotating part includes a driving member and a rotating member, the rotating member includes a shaft and a turntable, the turntable is located in the reaction chamber, one end of the shaft is connected to the turntable, the other end of the shaft extends out of the reaction chamber and is connected to the driving member, the driving member can drive the shaft to drive the turntable to rotate; the carrier is placed on the turntable and can rotate with the turntable; the rotating member is also provided with a cleaning chamber, the outer wall of the cleaning chamber is also provided with a purge hole, and the outer end of the shaft is also provided with a purge inlet connected to the cleaning chamber.

[0006] Optionally, the shaft portion is provided with the cleaning cavity along the axial direction, and the outer wall of the cleaning cavity is provided with the purge holes at intervals along the axial direction of the shaft portion.

[0007] Optionally, a cleaning brush is further included, and the cleaning brush is detachably connected to the outer edge of the turntable.

[0008] Optionally, a cooling channel is further provided in the turntable, and the shaft portion is provided with an inlet channel and an outlet channel connected to the cooling channel.

[0009] Optionally, the shaft portion includes a rotating shaft and a sleeve, the rotating shaft is axially provided with the inlet flow channel and the outlet flow channel, the sleeve is sleeved outside the rotating shaft, and both ends of the sleeve are respectively sealed and fixed to the outer wall of the rotating shaft along the circumferential direction, the space between the sleeve and the rotating shaft forms the cleaning chamber, and the outer wall of the sleeve is provided with the purge inlet.

[0010] Optionally, it also includes a collecting part arranged below the main body, the collecting part is provided with a collecting chamber, the collecting chamber is provided with an air inlet, an air outlet and a cleaning port, the air inlet is connected to the bottom outlet of the reaction chamber, and the cleaning port is arranged at the bottom of the collecting chamber or the lower end of the side wall of the collecting chamber.

[0011] Optionally, a dust detection device is also provided in the collection chamber.

[0012] Optionally, the air inlet is arranged at the top of the collecting chamber, the air outlet is arranged at the upper part of the collecting chamber, and a baffle is further arranged in the collecting chamber, and the baffle is arranged between the air inlet and the air outlet.

[0013] Optionally, it further comprises a lifting device and a telescopic tube, wherein the inner cavity of the telescopic tube is sealed and connected between the reaction chamber and the collection chamber, and the lifting device is used to lift the shaft to drive the turntable to lift.

[0014] Optionally, the main body includes an outer shell and an inner shell, the inner shell is arranged in the outer shell, the inner cavity of the inner shell forms the reaction chamber, the outer shell and the inner shell are sealed and connected at the gas outlet end of the reaction chamber, an outer cavity is formed between the outer shell and the inner shell, and a heating component is arranged in the outer cavity.

[0015] Optionally, it also includes a furnace door, a spray plate, and a telescopic mechanism, the furnace door blocks the outer cavity, the spray plate blocks the air inlet end of the reaction chamber, and is used to spray process gas into the reaction chamber, the telescopic mechanism is arranged between the furnace door and the spray plate, and the spray plate can be moved closer to or away from the air inlet end of the reaction chamber by telescoping the telescopic mechanism.

[0016] Compared with the prior art, the thin film deposition equipment provided by the present application has the following technical effects:

[0017] In the process of coating, a lot of dust will inevitably be generated, and the dust is easily adsorbed on the inner wall of the reaction chamber. Since the reaction chamber and the outer chamber are independent of each other, the dust generated in the reaction chamber will not be scattered outward, thereby preventing the dust from entering the outer chamber and ensuring the cleanliness of the heating components. In addition, the inner shell is made of materials with good thermal conductivity to improve the radiation difference of the heating components in space, so that the temperature field in the reaction chamber can be more uniform to ensure the reaction effect.

[0018] After working for a period of time, only the inner wall of the reaction chamber can be cleaned. Specifically, the purge gas can be introduced into the cleaning chamber through the purge inlet. After the purge gas enters the reaction chamber through the purge hole, the dust on the inner wall of the reaction chamber can be purged to prevent the dust from accumulating on the inner wall for a long time. Then, the dust will fall under the action of gravity and be discharged from the bottom outlet of the reaction chamber, thereby realizing self-cleaning of the reaction chamber.

[0019] That is to say, after being used for a period of time, the thin film deposition equipment can introduce purge gas into the reaction chamber through a rotating part to make the dust on the inner wall of the reaction chamber fall off, which can effectively ensure the cleanliness of the reaction chamber and thus ensure the quality and effect of the coating. In addition, the cleaning operation is relatively simple and the probability of stopping for cleaning can be reduced, thereby avoiding the impact of spending time cleaning dust on production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a schematic structural diagram of a thin film deposition device provided in an embodiment of the present application;

[0021] Figure 2 yes Figure 1 A perspective view of the rotating member;

[0022] Figure 3 is a top view of the rotating part;

[0023] Figure 4 yes Figure 3 Middle AA section view;

[0024] Figure 5 yes Figure 1 The structural diagram of the middle collection part;

[0025] Figure 6 It is a schematic diagram of the structure of the thin film deposition equipment during the cleaning process;

[0026] Figure 7 It is a schematic diagram of the structure of the thin film deposition equipment during the cooling process;

[0027] Figure 8 It is a schematic diagram of the structure of a carrier equipped with a substrate.

[0028] Attached Figure 1-Figure 8 In the figure, the reference numerals are described as follows:

[0029] 1 main body, 11 outer shell, 12 inner shell, 13 reaction chamber, 14 outer chamber;

[0030] 21 gas cabinet, 22 spray plate;

[0031] 3 furnace door;

[0032] 41 driving member, 42 rotating member, 43 shaft, 431 rotating shaft, 432 sleeve, 433 cooling inlet, 434 cooling outlet, 435 inlet flow channel, 436 outlet flow channel, 44 turntable, 441 cooling flow channel, 45 cleaning chamber, 46 purge hole, 47 purge inlet, 48 cleaning brush;

[0033] 5 carriers, 51 substrates;

[0034] 6. Heating components;

[0035] 7 telescopic mechanism;

[0036] 8 collecting part, 81 collecting chamber, 82 air inlet, 83 air outlet, 84 dust cleaning port, 85 baffle, 86 dust detection device;

[0037] 9 lifting device, 91 lifting drive member, 92 lifting plate;

[0038] 10 telescopic tube;

[0039] 101 rotating sealing device;

[0040] 102 slip ring;

[0041] 103 pump body. DETAILED DESCRIPTION

[0042] In order to enable those skilled in the art to better understand the technical solution of the present application, the present application is further described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0043] The present application provides a thin film deposition device, such as Figure 1 As shown, the thin film deposition device includes a main body 1, an air inlet, a furnace door 3, a rotating part and a carrier 5, wherein the main body 1 is provided with a reaction chamber 13, and the carrier 5 is used to load the workpiece to be coated (for example Figure 8 The substrate 51 shown in the figure), the carrier 5 is located in the reaction chamber 13, the air inlet portion is used to introduce the process gas into the reaction chamber 13, and the rotating portion can drive the carrier 5 to rotate in the reaction chamber 13 to ensure the uniformity of the coating on the surface of the workpiece.

[0044] like Figure 1As shown, the main body 1 includes an outer shell 11 and an inner shell 12. The inner shell 12 is arranged in the outer shell 11. The inner cavity of the inner shell 12 forms the above-mentioned reaction chamber 13. The space between the outer shell 11 and the inner shell 12 forms an outer chamber 14. The outer shell 11 and the inner shell 12 are sealed and connected at the gas outlet. After the furnace door 3 is closed, the gas inlet end of the outer chamber 14 can be blocked. The gas inlet part includes a gas cabinet 21 and a spray plate 22. The gas cabinet 21 is used to supply gas to the spray plate 22. The spray plate 22 can block the gas inlet end of the reaction chamber 13 and spray process gas into the reaction chamber 13. A heating component 6 is arranged in the outer chamber 14 to heat the reaction chamber 13 to ensure the reaction effect and thus ensure the uniformity of the coating.

[0045] Specifically, a telescopic mechanism 7 is further provided between the spray plate 22 and the door panel. When the furnace door 3 is closed and blocks the outer cavity 14, the telescopic mechanism 7 can be extended to allow the spray plate 22 to block the air inlet end of the reaction chamber 13. The outer shell 11 and the inner shell 12 are sealed and connected at the air outlet end, thereby preventing the process gas from entering the outer cavity 14 and generating dust. Specifically, the thin film deposition apparatus provided in this embodiment is a vertical structure, with the inlet end of the reaction chamber 13 arranged at the top and the outlet end arranged at the bottom.

[0046] like Figure 1 and Figure 2 As shown, the rotating part includes a driving member 41 and a rotating member 42, wherein the rotating member 42 includes a shaft 43 and a turntable 44, the inner end of the shaft 43 is located in the reaction chamber 13 and connected to the turntable 44, the outer end of the shaft 43 extends out of the reaction chamber 13 and is connected to the driving member 41, the driving member 41 can drive the turntable 44 to rotate through the shaft 43, and the carrier 5 is placed on the turntable 44 (the two can also be limitedly connected, etc.) and can rotate with the turntable 44.

[0047] It should be noted that the “outer end” refers to the end facing outside the reaction chamber 13 , and the “inner end” refers to the end facing inside the reaction chamber 13 .

[0048] The rotating member 42 is also provided with a cleaning chamber 45, and the outer wall of the cleaning chamber 45 is also provided with a purge hole 46. Figure 2 As shown, the outer end of the shaft portion 43 is further provided with a purge inlet 47 communicating with the cleaning chamber 45 , through which purge gas can be introduced into the cleaning chamber 45 , and the purge gas enters the reaction chamber 13 through the purge hole 46 .

[0049] In the process of coating, a large amount of dust is inevitably generated, and the dust is easily adsorbed on the inner wall of the reaction chamber 13. Since the reaction chamber 13 and the outer chamber 14 are independent of each other, the dust generated in the reaction chamber 13 will not be scattered outward, thereby preventing the dust from entering the outer chamber 14, ensuring the cleanliness of the inner wall of the outer chamber 14 and the heating component 6. In addition, the inner shell 12 is made of a material with good thermal conductivity to improve the radiation difference of the heating component 6 in space, so that the heating in the reaction chamber 13 can be more uniform to ensure the reaction effect.

[0050] After working for a period of time, only the inner wall of the reaction chamber 13 can be cleaned. Specifically, a purge gas can be introduced into the cleaning chamber 45 through the purge inlet 47. After the purge gas enters the reaction chamber 13 through the purge hole 46, the dust on the inner wall of the reaction chamber 13 can be purged to prevent the dust from accumulating on the inner wall for a long time. Then, the dust will fall under the action of gravity and be discharged from the bottom outlet of the reaction chamber 13, thereby realizing self-cleaning of the reaction chamber 13.

[0051] That is to say, the thin film deposition equipment provided in this embodiment can, after being used for a period of time, introduce a purge gas into the reaction chamber 13 through the rotating part 42 to make the dust on the inner wall of the reaction chamber 13 fall off, which can effectively ensure the cleanliness of the reaction chamber 13, and then ensure the quality and effect of the coating. In addition, the cleaning operation is relatively simple, and the probability of stopping for cleaning can be reduced, thereby avoiding the impact on production efficiency due to spending time cleaning dust.

[0052] During the coating process of the workpiece, low-pressure compressed gas can be introduced into the cleaning chamber 45 of the rotating part 42, and the gas can be ejected outward from the purge hole 46 to form an air curtain, thereby preventing dust from accumulating in the purge hole 46 and causing the purge hole 46 to be blocked and entering the cleaning chamber 45 through the purge hole 46. In the gap where no coating is performed, higher-pressure compressed gas can be introduced into the cleaning chamber 45 to purge the inner wall of the reaction chamber 13 to clean the dust attached to the inner wall of the reaction chamber 13.

[0053] Furthermore, in the present embodiment, the shaft portion 43 is provided with the above-mentioned cleaning chamber 45, and the outer wall of the cleaning chamber 45 is provided with a plurality of purge holes 46 at intervals along the axial direction of the shaft portion 43. Of course, in the present embodiment, there is no restriction on the specific setting position of the cleaning chamber 45. For example, the cleaning chamber 45 can also be set on the side wall or the upper and lower surfaces of the turntable 44. When the cleaning chamber 45 is set on the shaft portion 43, the cleaning chamber 45 has a certain axial length, so that the inner wall of the reaction chamber 13 can be purged from different height positions.

[0054] The outer wall of the cleaning chamber 45 is provided with the above-mentioned purge holes 46 along the circumferential direction. Thus, when the inner wall of the reaction chamber 13 is purged by the purge gas, the shaft 43 does not need to rotate, thereby ensuring the cleaning efficiency and improving the economy.

[0055] An installation interface is also provided on the outer edge of the turntable 44 for installing a cleaning brush 48. The cleaning brush 48 is detachably connected to the installation interface. Specifically, in the gap where no film is coated, the cleaning brush 48 is arranged along the axial direction of the shaft 43. The rotation of the shaft 43 can drive the cleaning brush 48 to rotate through the turntable 44, thereby cleaning the inner wall of the reaction chamber 13. Therefore, the length of the cleaning brush 48 can cover the axial length of the reaction chamber 13, so as to thoroughly clean the inner wall surface of the reaction chamber 13.

[0056] When the inner wall of the reaction chamber 13 needs to be thoroughly cleaned by the cleaning brush 48, the cleaning brush 48 can be installed to the installation interface (such as Figure 6 As shown in the figure, during this process, the purge hole 46 can be prevented from being blocked by dust by introducing gas at a relatively low pressure into the cleaning chamber 45. Under normal working conditions, the cleaning brush 48 does not need to be installed.

[0057] In this embodiment, due to the provision of the cleaning chamber 45, the cleaning of the inner wall of the reaction chamber 13 can be ensured while reducing the number of times the cleaning brush 48 is used, simplifying the operation of disassembling and assembling the cleaning brush 48 and effectively reducing the impact on production capacity.

[0058] like Figure 2-Figure 4 As shown, the turntable 44 is also provided with a cooling channel 441, the shaft portion 43 is provided with an inlet channel 435 and an outlet channel 436 communicating with the cooling channel 441, and the inner end of the shaft portion 43 is sealed and welded with the turntable 44. Specifically, the shaft portion 43 is also provided with a cooling inlet 433 and a cooling outlet 434. Figure 7 As shown, the cooling medium (which can be gas or liquid) can enter the inlet channel 435 from the cooling inlet 433, and further enter the cooling channel 441 to exchange heat with the workpiece in the carrier 5 located on the turntable 44, so that the temperature of the workpiece is reduced, thereby achieving rapid cooling. The cooling medium after heat exchange with the workpiece can flow out from the outlet channel 436.

[0059] The cooling medium flowing in the rotating member 42 exchanges heat with the workpiece, thereby achieving oxygen-free cooling, avoiding the loss of efficiency caused by oxidation of the high-temperature workpiece in the air, and at the same time ensuring the cooling efficiency, thereby ensuring the production efficiency.

[0060] like Figure 2 and Figure 3 As shown, the cooling channel 441 is arranged in a serpentine shape on the turntable 44, so that the heat exchange area can be increased and the cooling efficiency of the workpiece can be ensured. Of course, in this embodiment, there is no restriction on the arrangement of the cooling channel 441 on the turntable 44, such as the cooling channel 441 can also be arranged in multiple circles.

[0061] like Figure 4As shown, the shaft portion 43 includes a rotating shaft 431 and a sleeve 432, wherein the rotating shaft 431 is provided with the above-mentioned inlet flow channel 435 and outlet flow channel 436 in the axial direction, the outer end of the rotating shaft 431 is provided with the above-mentioned cooling inlet 433 and cooling outlet 434, the sleeve 432 is sleeved outside the rotating shaft 431, and the space between the rotating shaft 431 and the sleeve 432 forms the above-mentioned cleaning chamber 45, the sleeve 432 forms the outer wall of the cleaning chamber 45, and is provided with the above-mentioned purge hole 46, and the purge hole 46 is arranged along the axial direction and circumferential direction of the sleeve 432. The inner end and the outer end of the sleeve 432 are respectively sealed with the outer wall of the rotating shaft 431, and the outer end or the side wall of the sleeve 432 is provided with the above-mentioned purge inlet 47 for introducing the purge gas into the cleaning chamber 45, and the specific number of the purge holes 46 and the purge inlet 47 is not limited, and can be set according to actual conditions.

[0062] Specifically, the inlet flow channel 435 and the outlet flow channel 436 can be formed by machining inside the rotating shaft 431, or the rotating shaft 431 can be set as a pipe fitting, and a partition is set inside the pipe fitting to separate the inner cavity of the pipe fitting into two independent cavities, thereby forming the inlet flow channel 435 and the outlet flow channel 436.

[0063] Of course, the above-mentioned cleaning chamber 45, inlet flow channel 435 and outlet flow channel 436 can also be formed in the rotating shaft 431 by processing; when the cleaning chamber 45 is formed by sleeve 432 being sleeved on the outside of the rotating shaft 431, the structure of the shaft 43 can be simplified and the processing technology of the shaft 43 can be simplified.

[0064] like Figure 1 and Figure 5 As shown, the thin film deposition equipment also includes a collecting portion 8 arranged at the outlet of the reaction chamber 13, the collecting portion 8 is provided with a collecting chamber 81, the collecting chamber 81 is provided with an air inlet 82, an air outlet 83 and a cleaning port 84, wherein the air inlet 82 is connected to the outlet at the bottom of the reaction chamber 13, the air outlet 83 is connected to the pump body 103, and the cleaning port 84 is arranged at the bottom of the collecting chamber 81 or the lower end of the side wall of the collecting chamber 81.

[0065] The pump body 103 is used to provide power for the gas circulation in the reaction chamber 13. Under the action of the pump body 103, the gas in the reaction chamber 13 flows to the outlet, and enters the collecting chamber 81 from the air inlet 82, and is then discharged from the air outlet 83. During this process, part of the dust in the reaction chamber 13 will fall into the collecting chamber 81 with the air flow, and fall to the bottom of the collecting chamber 81 under the action of gravity, and then the dust can be discharged from the cleaning port 84. Specifically, the collecting chamber 81 can be cleaned regularly to clean the dust inside, or the dust in the collecting chamber 81 can be cleaned after a certain amount of dust accumulates. At this time, a dust detection device 86 can also be provided in the collecting chamber 81 to detect the amount of dust in the collecting chamber 81. When the dust amount reaches a preset amount, the cleaning port 84 can be opened for cleaning.

[0066] Specifically, the dust detection device 86 can weigh the dust, measure the volume or measure the height, and determine whether it is necessary to open the dust cleaning port 84 for dust cleaning based on parameters such as weight, volume, height, etc.

[0067] When the purge gas is introduced to clean the inner wall of the reaction chamber 13, or the cleaning brush 48 is used to clean the inner wall of the reaction chamber 13, the dust will fall into the collection chamber 81 under the action of gravity, and then can be discharged through the cleaning port 84, which is more convenient to operate.

[0068] Specifically, there is no limitation on the number of the cleaning ports 84, such as one, two, three or more. During the reaction process, the cleaning ports 84 are in a sealed state.

[0069] like Figure 5 As shown, the air inlet 82 is arranged at the top of the collection chamber 81, and the air outlet 83 is arranged at the upper part of the collection chamber 81 (it can be the top or the upper part of the side wall), and a baffle 85 is also arranged in the collection chamber 81, and the baffle 85 is located between the air inlet 82 and the air outlet 83. The gas entering the collection chamber 81 from the air inlet 82 can flow downward along the baffle 85, and be discharged from the air outlet 83 after bypassing the baffle 85. The baffle 85 can block the flow of dust and extend the gas flow path, so that the dust in the air flow can fall to the bottom of the collection chamber 81. Specifically, there is no restriction on the structure of the baffle 85, such as a cylindrical structure, an arc structure, or a flat structure.

[0070] The dust on the inner wall of the reaction chamber 13 is purged by introducing a purge gas, and the dust on the inner wall of the reaction chamber 13 is cleaned by a cleaning brush 48, and the dust will fall to the bottom of the collecting chamber 81. When the dust detection device 86 detects that the dust amount has reached the requirement for cleaning, the cleaning port 84 is opened, and the dust can be discharged from the cleaning port 84 through a dust suction device connected to the cleaning port 84, thereby realizing online automatic cleaning and maintenance. The automatic cleaning process is time-consuming and can be set to be performed during shift changes, which will not affect production and can greatly extend the equipment maintenance cycle.

[0071] The shaft portion 43 passes through the collecting portion 8 and extends into the reaction chamber 13. Therefore, a rotary sealing device 101 is provided between the outer wall of the shaft portion 43 and the bottom wall of the collecting portion 8, and cooperates with a dustproof shaft seal to ensure sealing.

[0072] like Figure 1 As shown, the thin film deposition device also includes a telescopic tube 10 and a lifting device 9, wherein the telescopic tube 10 seals and connects the reaction chamber 13 and the collection chamber 81 to form a gas flow channel, and the gas flow direction in the gas flow channel is as shown in FIG. Figure 1As shown by the green arrow in the middle, the lifting device 9 is used to drive the shaft 43 to move up and down, so as to drive the turntable 44 to move up and down in the reaction chamber 13, thereby adjusting the position of the carrier 5 in the reaction chamber 13 to meet the process requirements. In addition, the lifting device 9 can also adjust the height of the rotating member 42 in the reaction chamber 13 to perform a purging and cleaning operation on different height positions of the inner wall of the reaction chamber 13.

[0073] Specifically, in this embodiment, there is no limitation on the specific structure of the lifting device 9. Figure 1 , Figure 6 and Figure 7 As shown, the lifting device 9 includes a lifting drive member 91 and a lifting plate 92, wherein the lifting device 9 is arranged below the outer shell 11, and is used to drive the collecting portion 8 to rise and fall, and the shaft portion 43 passes through the collecting portion 8 and is sealed and connected along the circumferential direction. Therefore, the lifting and lowering of the lifting plate 92 can drive the shaft portion 43 to rise and fall, and then drive the turntable 44 to rise and fall in the reaction chamber 13. During the adjustment process, the telescopic tube 10 is extended and retracted to ensure the sealed connection between the reaction chamber 13 and the collecting chamber 81.

[0074] In this embodiment, there is no limitation on the specific structure of the telescopic tube 10, such as a bellows or at least two sleeves 432 that are mutually sleeved. Also, there is no limitation on the structure of the lifting drive member 91, such as a cylinder, a hydraulic cylinder, or a motor screw assembly.

[0075] like Figure 1 As shown, the bottom of the rotating shaft 431 passes through the sealing device and is connected to the driving member 41 , and the bottom of the rotating shaft 431 also passes through the driving member 41 and is connected to the slip ring 102 , so that the cooling medium can enter and exit the rotating shaft 431 .

[0076] When the shower plate 22 is designed with different structures and air intake modes, or an electromagnetic field is fed externally, the thin film deposition equipment provided in this embodiment can meet but is not limited to ALD (Atomic Layer Deposition), PEALD (Plasma Enhanced Atomic Layer Deposition), CVD (Chemical Vapor Deposition), PECVD (Plasma Enhanced ChemicalVapor Deposition), PVD (Physical vapor deposition), and other processes. This solution occupies a small area and requires little maintenance, and is also very suitable for experimental platforms of various processes.

[0077] The above are only preferred implementations of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A thin film deposition device, characterized in that: It comprises a main body (1), a rotating part and a carrier (5); The main body (1) is provided with a reaction chamber (13); The rotating part comprises a driving member (41) and a rotating member (42); the rotating member (42) comprises a shaft portion (43) and a turntable (44); the turntable (44) is located in the reaction chamber (13); one end of the shaft portion (43) is connected to the turntable (44); the other end of the shaft portion (43) extends out of the reaction chamber (13) and is connected to the driving member (41); the driving member (41) can drive the shaft portion (43) to drive the turntable (44) to rotate; The carrier (5) is placed on the turntable (44) and can rotate along with the turntable (44); The rotating member (42) is also provided with a cleaning chamber (45), the outer wall of the cleaning chamber (45) is also provided with a purge hole (46), and the outer end of the shaft portion (43) is also provided with a purge inlet (47) communicating with the cleaning chamber (45).

2. The thin film deposition device according to claim 1, characterized in that: The shaft portion (43) is provided with the cleaning chamber (45) along the axial direction, and the outer wall of the cleaning chamber (45) is provided with the purge holes (46) at intervals along the axial direction of the shaft portion (43).

3. The thin film deposition device according to claim 1, characterized in that: It also includes a cleaning brush (48), which is detachably connected to the outer edge of the turntable (44).

4. The thin film deposition device according to any one of claims 1 to 3, characterized in that: A cooling flow channel (441) is also provided in the turntable (44), and the shaft portion (43) is provided with an inlet flow channel (435) and an outlet flow channel (436) which are in communication with the cooling flow channel (441).

5. The thin film deposition device according to claim 4, characterized in that: The shaft portion (43) comprises a rotating shaft (431) and a sleeve (432); the rotating shaft (431) is provided with the inlet flow channel (435) and the outlet flow channel (436) along the axial direction; the sleeve (432) is sleeved outside the rotating shaft (431), and the two ends of the sleeve (432) are respectively sealed and fixed to the outer wall of the rotating shaft (431) along the circumferential direction; the space between the sleeve (432) and the rotating shaft (431) forms the cleaning chamber (45); and the outer wall of the sleeve (432) is provided with the purge inlet (47).

6. The thin film deposition device according to any one of claims 1 to 3, characterized in that: The reaction chamber (13) further comprises a collecting portion (8) disposed below the main body portion (1), the collecting portion (8) being provided with a collecting chamber (81), the collecting chamber (81) being provided with an air inlet (82), an air outlet (83) and a ash cleaning port (84), the air inlet (82) being connected to the bottom outlet of the reaction chamber (13), and the ash cleaning port (84) being disposed at the bottom of the collecting chamber (81) or at the lower end of the side wall of the collecting chamber (81).

7. The thin film deposition device according to claim 6, characterized in that: A dust detection device (86) is also provided in the collection chamber (81).

8. The thin film deposition device according to claim 6, characterized in that: The air inlet (82) is arranged at the top of the collecting chamber (81), and the air outlet (83) is arranged at the upper part of the collecting chamber (81). A baffle (85) is also arranged in the collecting chamber (81), and the baffle (85) is arranged between the air inlet (82) and the air outlet (83).

9. The thin film deposition device according to claim 6, characterized in that: It also comprises a lifting device (9) and a telescopic tube (10), wherein the inner cavity of the telescopic tube (10) is sealed and connected between the reaction chamber (13) and the collection chamber (81), and the lifting device (9) is used to lift the shaft portion (43) to drive the turntable (44) to lift and lower.

10. The thin film deposition device according to any one of claims 1 to 3, characterized in that: The main body (1) comprises an outer shell (11) and an inner shell (12); the inner shell (12) is arranged inside the outer shell (11); the inner cavity of the inner shell (12) forms the reaction chamber (13); the outer shell (11) and the inner shell (12) are sealedly connected at the gas outlet end of the reaction chamber (13); an outer cavity (14) is formed between the outer shell (11) and the inner shell (12); a heating component (6) is arranged inside the outer cavity (14).

11. The thin film deposition device according to claim 10, characterized in that: The invention also comprises a furnace door (3), a spray plate (22), and a telescopic mechanism (7); the furnace door (3) blocks the outer cavity (14); the spray plate (22) blocks the air inlet end of the reaction chamber (13) and is used to spray process gas into the reaction chamber (13); the telescopic mechanism (7) is arranged between the furnace door (3) and the spray plate (22); the spray plate (22) can be moved closer to or farther away from the air inlet end of the reaction chamber (13) by telescoping the telescopic mechanism (7).

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