Power semiconductor module of integrated gate drive pre-modulation circuit and functional module used for power semiconductor module

Abstract

The utility model discloses a power semiconductor module of an integrated gate drive pre-modulation circuit, comprising a first module provided with a power semiconductor chip and a gate drive pre-modulation circuit; and the second module is separated from the first module and is provided with a driving circuit for driving the power semiconductor chip to be switched on and switched off. According to the module, the driving circuit and the power circuit are separated into two modules, so that thermal isolation of the driving chip and the power chip is realized, the working temperature of the driving chip is reduced, and the service life and the reliability of the driving chip are improved; according to the module, the grid driving resistor, the grid driving capacitor and the power semiconductor chip are integrated on one module, parasitic inductance is reduced, and consistency is improved.

Description

Technical Field

[0001] The utility model belongs to the field of semiconductors, and in particular relates to a power semiconductor module with an integrated gate drive pre-modulation circuit. Background Art

[0002] Power MOSFET and IGBT are widely used as controllable power semiconductor devices. Their switching characteristics are determined by their internal structure, parasitic capacitance, and internal and external resistance. The gate driver (driver chip) amplifies the control signal by increasing the voltage and current to the gate input capacitance C of the MOSFET / IGBT. GEin and reverse transfer capacitance (Miller capacitance) C GCin Charging and discharging to turn on and off the MOSFET / IGBT are closely related to the switching performance, on-state and switching losses of the MOSFET / IGBT. The drive circuit of the MOSFET / IGBT needs to provide multiple functions at the same time, not only to turn on and off the MOSFET / IGBT, but also to realize the protection function and control the voltage change rate du / dt and current change rate di / dt during the switching stage. Furthermore, the MOSFET / IGBT drive can have the function of protecting the MOSFET / IGBT from damage, including short circuit and overvoltage protection. At the same time, the driver affects the dynamic characteristics of the IGBT and the freewheeling diode (FRD).

[0003] The existing technologies can be roughly divided into three categories:

[0004] 1) Arrange the control, drive, power discrete devices, resistors, capacitors, etc. on the PCB to form a complete circuit, which is suitable for small and medium power ranges; the parasitic parameters of the power loop and drive loop based on the PCB and power discrete devices are relatively large and have poor consistency, and poor heat dissipation limits the power range.

[0005] 2) The IPM intelligent power module based on lead frame and epoxy plastic packaging integrates driver, power discrete devices, resistors and capacitors, which is suitable for low-power occasions. The IPM intelligent module packages the driver chip and the power chip together. The power chip generates a lot of heat and has a high operating temperature (usually 100-150°C), while the driver chip has a low operating temperature range (usually less than 100°C). The thermal coupling of the power chip affects the life and reliability.

[0006] 3) High-power applications often use a combination of standard power modules and driver boards. In this mode, the parasitic parameters and heat dissipation of the power circuit are optimized, but the parasitic parameters and consistency issues of the driver circuit still exist. Utility Model Content

[0007] The utility model provides a power semiconductor module with an integrated gate drive pre-modulation circuit, which can improve the life and reliability of a drive chip.

[0008] The power semiconductor module includes:

[0009] The first module is provided with a power semiconductor chip and a gate drive pre-modulation circuit;

[0010] The second module is separate from the first module and is provided with a driving circuit for driving the power semiconductor chip to turn on and off.

[0011] In some embodiments, the gate drive pre-modulation circuit includes a turn-on diode Don, a turn-off diode Doff, and a turn-on resistor R Gon and the off resistance R Goff ; Turn on diode D on The anode is used to connect to the driving circuit for driving signal loading, and the cathode is connected to the open resistor R Gon Used to connect to the gate of the power semiconductor chip; turn-off diode D off The cathode of the turn-on diode D on The anode is connected to the off resistor R Goff Used to connect to the gate of power semiconductor chips.

[0012] In some embodiments, the gate drive pre-modulation circuit further includes a bypass resistor R GE , used to prevent the gate capacitance of the power semiconductor chip from being accidentally charged when the drive circuit is in a high-impedance output state.

[0013] In some embodiments, the gate drive pre-modulation circuit further includes a capacitor C GE , which is used to absorb the current generated by the reverse transfer capacitor of the power semiconductor chip when the voltage between the first and second terminals rises and the voltage change rate is generated when the power semiconductor chip is turned on and off.

[0014] In some embodiments, the first module includes a ceramic substrate having an intermediate ceramic layer and metal layers attached to both sides of the intermediate ceramic layer, the top metal layer is provided with a patterned circuit, and is formed into a functional circuit with a power semiconductor chip and a gate drive pre-modulation circuit.

[0015] In some embodiments, a packaging layer is added on the ceramic substrate to protect the power semiconductor chip, imaged circuits and electrical connections.

[0016] The utility model also provides a functional module of a power semiconductor module used for the integrated gate drive pre-modulation circuit provided by the utility model. The module comprises a substrate and a power semiconductor chip and a gate drive pre-modulation circuit arranged on the substrate.

[0017] Beneficial effects of the utility model:

[0018] This module separates the drive circuit and the power circuit into two modules, achieving thermal isolation between the drive chip and the power chip, reducing the operating temperature of the drive chip, and improving the life and reliability of the drive chip.

[0019] This module integrates gate drive resistors and capacitors with power semiconductor chips on one module, reducing the parasitic inductance generated by wiring and improving the consistency of parasitic inductance of each chip drive circuit.

[0020] This module integrates resistors, capacitors and power semiconductor chips on a ceramic substrate, which increases the area of ​​the ceramic substrate. The area of ​​the ceramic substrate where resistors and capacitors are arranged improves the heat dissipation efficiency of the power chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments of the utility model and used together with the specification to explain the principle of the utility model. Obviously, the drawings described below are only some embodiments of the utility model, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work. In the drawings:

[0022] Figure 1 A structural layout diagram of a first module of the power semiconductor module provided by the utility model;

[0023] Figure 2 A left view of the first module of the power semiconductor module provided by the utility model

[0024] Figure 3 A bottom view of a first module of the power semiconductor module provided by the utility model;

[0025] Figure 4 A schematic diagram of the electrical structure of a first module of the power semiconductor module provided by the utility model;

[0026] Figure 5 A circuit structure diagram of a power semiconductor chip in a first module of the power semiconductor module provided by the utility model constructed as a three-phase full-bridge circuit;

[0027] The figure takes IGBT as an example of a power semiconductor chip. It should be understood that power semiconductor chips are not limited to IGBT. MOSFET as a power semiconductor chip corresponds the drain D and source S of MOSFET to the collector C and emitter E of IGBT respectively, and when MOSFET has an internal parasitic diode, anti-parallel FRD is generally not required. DETAILED DESCRIPTION

[0028] Here, the power semiconductor module structure provided by the utility model is described in detail with reference to the accompanying drawings.

[0029] The switching process of MOSFET / IGBT can be controlled by adjusting the gate capacitance charging and discharging speed. The gate capacitance charging and discharging process can be controlled by resistance, voltage or current. Control by a gate resistor (or two different resistors to control the opening and closing respectively) is the most common choice because it is very easy to implement. GS / Voltage GE Under constant conditions, the switching speed and time can be adjusted by adjusting the resistor R Gon , R Goff To control, R Gon , R Goff The smaller it is, the shorter the switching time is and the switching loss will decrease; on the contrary, the noise interference during turn-on will increase.

[0030] The utility model provides a power semiconductor module with an integrated gate drive pre-modulation circuit, the module comprising: a first module, on which a power semiconductor chip and a gate drive pre-modulation circuit are arranged; and a second module, which is separate from the first module and is distributed with a drive circuit for driving the power semiconductor chip to turn on and off, and can be used as a gate driver of the power semiconductor chip to provide a gate signal to control the turning on and off of the power semiconductor chip.

[0031] The first module in this module is the power module, which is mainly composed of power semiconductor chips. Figure 1-4 The first module includes a ceramic substrate 1, a power semiconductor chip 2, a resistor, a capacitor, a diode and a pin terminal 3.

[0032] The ceramic substrate 1 is a sandwich structure, including an intermediate ceramic layer and metal layers attached to both sides of the ceramic layer. The top metal layer is provided with a patterned circuit for forming a functional circuit with resistors and capacitors. The intermediate ceramic layer is used for insulation, heat conduction and mechanical support. The bottom metal layer is used for mechanical reinforcement and connection with an external heat sink to form a heat conduction path.

[0033] The power semiconductor chip, resistor, capacitor, and diode are welded or sintered on the top metal layer and are electrically connected to the circuit on the top metal layer. The power semiconductor chip, resistor, capacitor, and pin terminal 3 are electrically connected to form a power circuit.

[0034] Resistors, capacitors and diodes form a gate drive pre-modulation circuit, refer to Figure 4 , the resistor and diode have a turn-on diode D on , turn off diode D off , turn-on resistance R Gon and the off resistance R Goff ; Turn on diode D on The anode is used to connect to the driving circuit for driving signal loading, and the cathode is connected to the open resistor R Gon Used to connect to the gate of the power semiconductor chip; turn-off diode D off The cathode of the turn-on diode D on The anode is connected to the off resistor R Goff Used to connect to the gate of power semiconductor chips.

[0035] When the driver circuit on the second module inputs a positive voltage between terminals G and E (IGBT) / G and S (MOSFET), the diode D is turned on. on Turn on and off diode D off Cut off, the drive circuit turns on the resistor R Gon (1Ω to 100Ω) and the built-in gate resistor R of IGBT / MOS Gin (0.1Ω to 10Ω) for gate parasitic capacitance (including gate input capacitance C GEin and reverse transfer capacitor C GCin ) is charged to turn on the IGBT / MOSEFT; when the drive circuit on the second module inputs zero voltage or negative voltage between terminals G and E (IGBT) / G and S (MOSEFT), the diode D is turned on. on , turn off diode D off The drive circuit turns off the gate resistor R Goff (1Ω to 100Ω) and the built-in gate resistor R of the IGBT / MOSFET Gin For gate parasitic capacitance (including gate input capacitance C GEin and reverse transfer capacitor C GCin ) to turn off the IGBT / MOSEFT. At voltage V GE / V GS Under constant conditions, the switching speed and time can be adjusted by adjusting the resistor R Gon , R Goff To control, R Gon , R Goff The smaller it is, the shorter the switching time is, and all dynamic parameters during the turn-on and turn-off processes can be optimized separately.

[0036] Recombination Figure 4The gate drive pre-modulation circuit also includes a bypass resistor R GE (10Ω to 100kΩ), its function is to prevent the gate capacitance from being accidentally charged when the driver circuit is in the high-impedance output state (off state and driver supply voltage failure).

[0037] The collector-emitter voltage V CE / Drain-Source Voltage V DS The voltage rises and produces a voltage change rate dv / dt, which is transmitted through the reverse transfer capacitor C GCin The generated current I = C GCin ×dv / dt, this current will pull up the gate potential through the gate resistor, causing the power semiconductor chip to be triggered and turned on by mistake. GE Absorbing current stabilizes voltage and avoids false triggering of power semiconductor chips.

[0038] Electrical paths are formed by welding or sintering connections between power semiconductor chips, between power semiconductor chips and resistors / capacitors / diodes, between power semiconductor chips and metal circuits, and between regions of metal circuit layers according to electrical topology. Bonding wires, bonding tapes, etc. are used.

[0039] The pin terminal 3 is used to provide an electrical connection path between the internal and external circuits of the module and to provide support for module installation.

[0040] This module can be filled with packaging glue to protect the metal circuit layer, chip and internal electrical connections (electrical paths formed between power semiconductor chips, between power semiconductor chips and resistors / capacitors / diodes, between power semiconductor chips and metal circuits, and between various areas of the metal circuit layer). It can also be filled together after installation at the application end.

[0041] In this module, power semiconductor chips can be assembled into any power circuit, such as Figure 5 In the three-phase full-bridge circuit shown, the gate of each power semiconductor chip is respectively configured with a gate drive pre-modulation circuit to achieve discrete control to match each power semiconductor chip; when the parameters of each power semiconductor chip are matched, only one gate drive pre-modulation circuit can be configured to achieve control of all power semiconductor chips. The power semiconductor chip can also be constructed into a half-bridge circuit or other power circuit.

[0042] The driving circuit on the second module in this module is configured as any existing driving circuit capable of driving a power semiconductor.

[0043] The present disclosure has been described by the above-mentioned relevant embodiments, but the above-mentioned embodiments are only examples for implementing the present disclosure. It must be pointed out that the disclosed embodiments do not limit the scope of the present disclosure. On the contrary, changes and modifications made without departing from the spirit and scope of the present disclosure are all within the scope of patent protection of the present disclosure.

Claims

1. A power semiconductor module with an integrated gate drive pre-modulation circuit, characterized in that: This module includes: The first module is provided with a power semiconductor chip and a gate drive pre-modulation circuit; The second module is separate from the first module and is provided with a driving circuit for driving the power semiconductor chip to turn on and off.

2. The power semiconductor module with integrated gate drive pre-modulation circuit according to claim 1, characterized in that: The gate drive pre-modulation circuit includes a turn-on diode D on , turn off diode D off , turn-on resistance R Gon and the off resistance R Goff ; Turn on diode D on The anode is used to connect to the driving circuit for driving signal loading, and the cathode is connected to the open resistor R Gon Used to connect to the gate of the power semiconductor chip; turn-off diode D off The cathode of the turn-on diode D on The anode is connected to the off resistor R Goff Used to connect to the gate of power semiconductor chips.

3. The power semiconductor module with integrated gate drive pre-modulation circuit according to claim 2, characterized in that: The gate drive pre-modulation circuit further includes a bypass resistor R GE , which is used to prevent the gate capacitance of the power semiconductor chip from being accidentally charged when the drive circuit is in a high-impedance output state.

4. The power semiconductor module with integrated gate drive pre-modulation circuit according to claim 2, characterized in that: The gate drive pre-modulation circuit further includes a capacitor C GE , which is used to absorb the current generated by the reverse transfer capacitor of the power semiconductor chip when the voltage between the first and second terminals rises and the voltage change rate is generated when the power semiconductor chip is turned on and off.

5. The power semiconductor module with integrated gate drive pre-modulation circuit according to claim 1, characterized in that: The first module includes a ceramic substrate having an intermediate ceramic layer and metal layers attached to both sides of the intermediate ceramic layer. The top metal layer is provided with a patterned circuit, which is combined with a power semiconductor chip and a gate drive pre-modulation circuit to form a functional circuit.

6. The power semiconductor module with integrated gate drive pre-modulation circuit according to claim 5, characterized in that: The encapsulation layer is added on the ceramic substrate to protect the power semiconductor chips, imaging circuits and electrical connections.

7. A functional module of a power semiconductor module used in an integrated gate drive pre-modulation circuit according to any one of claims 1 to 6, characterized in that: The module includes a substrate, a power semiconductor chip and a gate drive pre-modulation circuit arranged on the substrate.

8. The functional module according to claim 7, characterized in that: The gate drive pre-modulation circuit includes a turn-on diode D on , turn off diode D off , turn-on resistance R Gon and the off resistance R Goff ; Turn on diode D on The anode is used to drive the signal loading, and the cathode is connected through the open resistor R Gon Used to connect to the gate of the power semiconductor chip; turn-off diode D off The cathode of the turn-on diode D on The anode is connected to the off resistor R Goff Used to connect to the gate of power semiconductor chips.

9. The functional module according to claim 8, characterized in that: The gate drive pre-modulation circuit further includes a bypass resistor R GE , which is used to prevent the gate capacitance of the power semiconductor chip from being accidentally charged when the drive signal is in a high-impedance output state.

10. The functional module according to claim 8, characterized in that: The gate drive pre-modulation circuit further includes a capacitor C GE , which is used to absorb the current generated by the reverse transfer capacitor of the power semiconductor chip when the voltage between the first and second terminals rises and the voltage change rate is generated when the power semiconductor chip is turned on and off.

Images