Laser structure of quantum dot with light source area

Abstract

The utility model relates to the field of semiconductors, and discloses a laser structure with a quantum dot light source area, which comprises a substrate layer made of a semiconductor material and used for providing supporting and power supply functions; a plurality of periodic total reflection mirror layers are respectively stacked above and below the substrate layer, and the DBR layers are formed by alternating high-refractive-index materials and low-refractive-index materials; in the light source area, a plurality of quantum dot layers are designed between the upper DBR layer and the lower DBR layer, and the required light emission characteristic is achieved by controlling the size, the shape and the composition of quantum dots; an electrode region; and outputting windows up and down. The VCSEL structure provided by the utility model comprises a substrate layer for supporting and power supply, upper and lower DBR layers for realizing vertical reflection and waveguide effects, a multi-quantum dot layer for solving non-uniformity, current injection in an electrode region, and upper and lower output windows for realizing light output and coupling. This design can provide more uniform light emission while maintaining the advantages of low threshold current and easy fabrication integration of the VCSEL.

Description

Technical Field

[0001] The utility model belongs to the field of semiconductors, in particular to a laser structure with a quantum dot light source area. Background Art

[0002] Quantum dot laser is a laser emitting device based on semiconductor materials, which uses quantum dot structure to achieve light amplification and laser emission. It can achieve high efficiency, miniaturization and tunable wavelength laser output, and is widely used in optical communications, biomedicine, display technology and other fields.

[0003] In the structure of quantum dot lasers, the following regions are usually included: Quantum dot growth region: Quantum dots are nanoscale structures composed of several atoms or dozens of atoms, which are formed on semiconductor materials through epitaxial growth technology. This region is used to grow quantum dots, which can be achieved through molecular beam epitaxy, metal organic chemical vapor deposition and other technologies. Light source region: The light source region is the key part of the laser, which contains quantum dots. When current passes through the light source region, electrons jump from low energy states to high energy states, generating photons. The size and band structure of quantum dots determine the emission frequency of light, and light emission of different wavelengths can be achieved by regulating the size and composition of quantum dots. Attenuation region: The attenuation region is located at both ends of the light source region, which is used to reduce light reflection and increase light absorption to improve the efficiency and stability of the laser. Optical waveguide region: The optical waveguide region is used to guide and couple the transmission of light and output the laser to the outside. Waveguide devices with multilayer structures are usually used to achieve light guidance and output control through reflection and total reflection. Electrode region: The electrode region is used to provide a place for current injection into the light source region, and to excite quantum dots to emit lasers by applying voltage. The electrode area can be divided into positive and negative poles to form a current loop.

[0004] However, quantum dots are nanoscale structures whose size and shape often have certain non-uniformity, which can lead to uneven output of quantum dot lasers, such as differences in output power and wavelength distribution. Utility Model Content

[0005] Technical problem to be solved: How to solve the problem of non-uniformity of quantum dot lasers.

[0006] Technical solution: The utility model provides a quantum dot laser structure with a light source area, including: a substrate layer: made of semiconductor material, which is used to provide support and power supply functions; upper and lower DBR layers: a plurality of periodic total reflection mirror layers are stacked above and below the substrate layer, respectively, and these DBR layers are composed of alternating high-refractive index materials and low-refractive index materials, and are used to achieve vertical reflection and waveguide effects of light; light source area: between the upper and lower DBR layers, a plurality of quantum dot layers are designed, and the required light emission characteristics are achieved by controlling the size, shape and composition of the quantum dots; electrode area: the area located above and below the upper and lower DBR layers, which is used to provide the function of injecting current into the light source area, and the electrode area can be divided into a positive pole and a negative pole to form a current loop; upper and lower output windows: at the top and bottom of the laser structure, transparent windows are designed to achieve the output of light through the VCSEL and coupled heat generation.

[0007] Furthermore, the semiconductor material used to make the base layer is gallium arsenide.

[0008] Further, the high refractive index material in the DBR layer may be aluminum arsenide, and the low refractive index material may be gallium arsenide.

[0009] Furthermore, each quantum dot layer in the light source region includes uniformly distributed quantum dots.

[0010] Furthermore, the electrode region is made of metal, which may be gold, silver or aluminum.

[0011] Furthermore, the upper and lower output windows can be polished surfaces or focused using an optical unit.

[0012] Technical effect: The VCSEL structure provided by the utility model includes a substrate layer as support and power supply, upper and lower DBR layers to achieve vertical reflection and waveguide effect, multiple quantum dot layers to solve non-uniformity, electrode area injection current, and upper and lower output windows to achieve light output and coupling. This design can provide more uniform light emission while maintaining the advantages of low threshold current and easy manufacturing and integration of VCSEL. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings:

[0014] Figure 1 It is a schematic diagram of the structure of the utility model;

[0015] Figure 2 It is a schematic diagram of the structure of the utility model;

[0016] In the figure: 1, substrate layer; 2, DBR layer; 3, light source area; 4, electrode area; 5, output window. DETAILED DESCRIPTION

[0017] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application; obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments, and all other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application without making creative work are within the scope of protection of the present application.

[0018] In the description of the present application, it should be noted that the terms "upper", "lower", "inner", "outer", "top / bottom" and the like indicate positions or positional relationships based on the positions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific position, be constructed and operated in a specific position, and therefore cannot be understood as limiting the present application. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0019] The quantum dots provided in this specific embodiment have a laser structure in the light source region, such as Figure 1 and Figure 2 As shown, including:

[0020] Substrate: The substrate is the support and power supply part of the VCSEL. It is usually made of high-purity semiconductor materials such as gallium arsenide. The substrate not only provides the mechanical strength and stability required by the VCSEL, but also includes the electrode contact area for current injection.

[0021] Upper and lower DBR layers: The upper and lower DBR layers are the core parts of the VCSEL structure, which are used to realize the vertical reflection and waveguide effect of light. Each DBR layer is composed of multiple periodic high refractive index material layers, such as AlAs and low refractive index material layers, such as GaAs, stacked alternately. This structure forms an optical cavity, which enhances the reflection of light in two directions, thereby achieving gain conditions.

[0022] Light source area: The light source area is located between the upper and lower DBR layers. In order to solve the problem of non-uniformity, multiple quantum dot layers can be designed. Each quantum dot layer contains a large number of evenly distributed quantum dots. By controlling the size, shape and composition of the quantum dots, its band structure and emission characteristics can be adjusted. The design of multiple quantum dot layers can average the emission of light, thereby reducing non-uniformity.

[0023] Electrode area: The electrode area is located above and below the upper and lower DBR layers and is used to inject current into the light source area. It is usually made of metal materials such as gold and aluminum, and can be divided into positive and negative electrodes. When an external voltage is applied, current is injected from the positive electrode into the light source area, generating a lasing effect by exciting the carriers in the quantum dots.

[0024] Upper and lower output windows: To achieve the output and coupling of light, VCSEL uses transparent upper and lower output windows. These windows can be polished planes or focussed using optical units. The windows enable light to pass through the VCSEL structure and couple with other optical elements, such as optical fibers or detectors.

[0025] The extended VCSEL structure includes a substrate layer as support and power supply, upper and lower DBR layers to achieve vertical reflection and waveguide effects, multiple quantum dot layers to solve non-uniformity, electrode area to inject current, and upper and lower output windows to achieve light output and coupling. This design can provide more uniform light emission while maintaining other advantages of VCSEL, such as low threshold current and easy manufacturing integration.

[0026] The above are all preferred embodiments of the present application, and the protection scope of the present application is not limited thereto. Therefore, any equivalent changes made according to the structure, shape, and principle of the present application should be included in the protection scope of the present application.

Claims

1. A quantum dot laser structure having a light source region, characterized in that: include: Base layer (1): made of semiconductor material, used to provide support and power supply functions; Upper and lower DBR layers (2): A plurality of periodic total reflection mirror layers are stacked above and below the substrate layer (1), respectively. These DBR layers (2) are composed of alternating high refractive index materials and low refractive index materials, and are used to achieve vertical reflection of light and waveguide effect; Light source area (3): between the upper and lower DBR layers (2), multiple quantum dot layers are designed to achieve the desired light emission characteristics by controlling the size, shape and composition of the quantum dots; Electrode region (4): a region located above and below the upper and lower DBR layers (2), used to provide a function of injecting current into the light source region. The electrode region (4) can be divided into a positive electrode and a negative electrode to form a current loop; Upper and lower output windows (5): Transparent windows are designed at the top and bottom of the laser structure to allow light to pass through the VCSEL output and couple to heat.

2. The quantum dot laser structure with a light source region according to claim 1, characterized in that: The semiconductor material used to make the base layer (1) is gallium arsenide.

3. The quantum dot laser structure with a light source region according to claim 1, characterized in that: The high refractive index material in the DBR layer (2) may be aluminum arsenide, and the low refractive index material may be gallium arsenide.

4. The quantum dot laser structure with a light source region according to claim 1, characterized in that: Each quantum dot layer in the light source region (3) contains uniformly distributed quantum dots.

5. The quantum dot laser structure with a light source region according to claim 1, characterized in that: The electrode region (4) is made of metal, which may be gold, silver or aluminum.

6. The quantum dot laser structure with a light source region according to claim 1, characterized in that: The upper and lower output windows (5) can be polished surfaces or focused using optical units.

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