Heating disc structure and thin film deposition device
By opening a gas outlet on the upper surface of the heating plate and communicating with the gas outlet channel, a negative pressure area is formed to adsorb the wafer, which solves the problem of unevenness caused by the position shift of the wafer during thin film deposition and improves the product yield.
Patent Information
- Application Number
- CN202420947981.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-04-30
- Publication Date
- 2025-02-11
- Estimated Expiration
- 2034-04-30
AI Technical Summary
During thin film deposition, the position of the wafer may be offset due to gas flow or processing method problems during the heating process, resulting in uneven film deposition and affecting product performance.
A heating disk structure is designed, including opening a gas outlet hole on the upper surface of the first heating disk and communicating with the internal gas outlet passage. When the driving member starts the gas extraction, a negative pressure area is formed to closely adsorb the wafer to ensure that it is heated. Stable to the heating plate during the process.
By adsorbing the lower surface of the wafer, the wafer shift during heating is avoided, and the uniformity of the wafer during thin film deposition is improved, thereby improving the yield rate of production.
Smart Images
Figure CN222455215U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of thin film deposition, in particular to a heating disk structure and a thin film deposition device. Background Art
[0002] Thin film deposition is an important part of wafer processing and manufacturing, which forms a thin film on the surface of the wafer through thin film deposition equipment. Chemical vapor thin film deposition equipment is one of them. It places the wafer in the reaction chamber, and the reaction gas enters the reaction chamber through the gas distribution plate, and uses a radio frequency device to plasmatize the reaction gas. The heating plate in the reaction chamber provides the temperature required for the wafer reaction, so that a thin film is deposited on the wafer.
[0003] In the prior art, when depositing a thin film, the heater is energized to convert electrical energy into thermal energy. In order to make the working temperature in the chamber reach or exceed the temperature required for the reaction, it is often necessary to use airflow to achieve a uniform temperature in the chamber. However, due to problems such as airflow or processing methods, the position of the wafer may shift during the heating process, and the effective working distance of the thin film deposition will change, resulting in uneven thin film deposition and affecting product performance. Utility Model Content
[0004] In view of this, the utility model provides a heating plate structure and a thin film deposition device to solve the problem that during the heating process, the position of the wafer may be offset, resulting in uneven thin film deposition.
[0005] In a first aspect, the utility model provides a heating plate structure, comprising:
[0006] A first heating plate, in which a first exhaust channel is provided, an exhaust hole connected to the first exhaust channel is provided on the upper surface of the first heating plate, and the upper surface of the first heating plate is suitable for placing a wafer and the wafer cover is arranged on the exhaust hole;
[0007] An exhaust pipe has one end connected to the first exhaust channel and the other end suitable for being connected to a driving member, and the driving member is used to exhaust air from the exhaust pipe.
[0008] Beneficial effect: This heating plate structure has an exhaust hole on the upper surface of the first heating plate and connects it to the internal first exhaust channel. When the driving member starts to exhaust the exhaust pipe, the gas in the first exhaust channel and the exhaust hole will be exhausted, so that a negative pressure area is formed on the contact surface between the exhaust hole and the wafer, which can effectively adsorb the lower surface of the wafer and tightly adsorb the wafer on the upper surface of the first heating plate, ensuring that the wafer is firmly attached to the first heating plate during the entire heating process, avoiding wafer deviation during the heating process, improving the uniformity of the wafer during thin film deposition, and thereby improving the production yield.
[0009] In an optional embodiment, the exhaust hole is arranged near the central area of the upper surface of the first heating plate.
[0010] Beneficial effect: By placing the exhaust hole near the center of the first heating plate, negative pressure can be generated more evenly under the wafer, ensuring that the lower surface of the wafer is evenly adsorbed. Even large-sized wafers can obtain a good overall adsorption effect, avoiding the wafer from shifting or deforming due to uneven local suction during the heating process, thereby improving the stability and uniformity of wafer processing.
[0011] In an optional embodiment, the exhaust hole is inclined, and in a direction from the lower surface of the first heating plate to the upper surface of the first heating plate, the exhaust hole is inclined from a central area close to the first heating plate to a direction away from the central area of the first heating plate.
[0012] Beneficial effects: The exhaust holes are tilted from the center area of the first heating plate to the edge, which helps the gas to form a more effective flow path under the wafer, speed up the exhaust speed, and improve the efficiency of vacuuming. The tilted design can facilitate the smooth discharge of gas, reduce blind spots, and ensure that the vacuum degree in each area under the wafer is more uniform. At the same time, the tilted exhaust holes are helpful to set multiple exhaust holes that intersect and connect with each other on the first heating plate.
[0013] In an optional embodiment, a plurality of the air extraction holes are arranged at intervals, and one end of each of the plurality of air extraction holes is connected to one end of the first air extraction channel.
[0014] Beneficial effects: Multiple suction holes are distributed at intervals on the upper surface of the first heating plate, which can adsorb multiple areas on the lower surface of the wafer, ensuring a more uniform vacuum on the lower surface of the wafer, and avoiding excessive or weak local suction force caused by a single suction hole. If individual suction holes are blocked or fail, other suction holes can still maintain sufficient vacuum to ensure the normal operation of the system, thereby enhancing the reliability and stability of the system.
[0015] In an optional embodiment, it also includes a second heating plate and a third heating plate, a heating element is provided between the second heating plate and the third heating plate, the first heating plate, the second heating plate and the third heating plate are arranged in sequence from top to bottom, and the second heating plate and the third heating plate are both provided with a second exhaust channel connected to the first exhaust channel, and the exhaust pipe is connected to the second exhaust channel.
[0016] Beneficial effect: By adding a second heating plate and a third heating plate under the first heating plate, and setting a heating element between the second heating plate and the third heating plate, the heating element heats the second heating plate first, and the second heating plate contacts the first heating plate, and evenly transfers heat to the first heating plate, ensuring the uniformity of the surface temperature of the first heating plate. In addition, the design of setting multiple layers of heating plates can more efficiently utilize heat, reduce heat loss, and improve the overall heating efficiency and response speed.
[0017] A second exhaust channel is opened on the second heating plate and the third heating plate corresponding to the first exhaust channel. The exhaust pipe can be set at the bottom of the third heating plate to exhaust the exhaust holes, thereby reducing the chamber space occupied by the heating plate structure.
[0018] In an optional embodiment, a mounting groove is formed on the lower surface of the second heating plate, and the heating element is disposed in the mounting groove.
[0019] Beneficial effects: By building the heating element into the mounting groove of the second heating plate, the overall structure can be made more compact and the space occupied by the equipment can be reduced. The heating element is installed in the second heating plate, which helps to improve the heating efficiency. At the same time, by rationally designing the structure of the mounting groove, the heat can be evenly distributed on the surface of the second heating plate, hot spots can be reduced, and the uniformity of heating can be ensured. By setting the heating element in the mounting groove, the gap between the second heating plate and the third heating plate can be reduced when assembling the second heating plate and the third heating plate.
[0020] In an optional embodiment, a plurality of air outlet holes are formed on the upper surface of the first heating plate, and an air inlet passage connected to the air outlet holes is formed on the second heating plate and the third heating plate, and an air inlet pipe is connected to the air inlet passage.
[0021] Beneficial effects: Gas is input into the air inlet channels of the second heating plate and the third heating plate through the air inlet pipe, and the gas carries the heat around the second heating plate and is discharged from the air outlet of the first heating plate, which helps to establish a stable hot air flow in the chamber and improve the utilization efficiency of thermal energy. The flow of gas can accelerate the transfer of heat, making the heat distribution more uniform, shortening the heating time and improving production efficiency.
[0022] In an optional embodiment, a guide groove communicating with the corresponding air inlet channel is formed on the upper surface of the second heating plate, and the guide groove is communicated with the air outlet.
[0023] Beneficial effects: The guide groove can effectively guide the gas flow, ensuring that the gas enters the air inlet channel and flows to the air outlet evenly and efficiently along the predetermined path, which can reduce the turbulence of gas flow and avoid the formation of local overheating or cold areas, thereby improving the uniformity and efficiency of heating.
[0024] In an optional embodiment, the air outlet is inclined, and in a direction from the lower surface of the first heating plate to the upper surface of the first heating plate, the air outlet is inclined from a central area close to the first heating plate to a direction away from the central area of the first heating plate.
[0025] Beneficial effect: The air outlet is tilted so that the air outlet can be set at the edge of the first heating plate, avoiding the placement of the wafer and preventing the wafer from blocking the air outlet. At the same time, the tilted air outlet can promote the rapid discharge of hot air inside the heating plate structure, speed up the heat dissipation process, help maintain the thermal stability of the heating plate, reduce thermal stress, and extend the service life of the heating plate.
[0026] In a second aspect, the utility model further provides a thin film deposition device, comprising:
[0027] Chamber;
[0028] A heating plate structure, wherein the first heating plate is arranged in the chamber.
[0029] Beneficial effects: This thin film deposition device sets the heating plate structure in the chamber, and forms a negative pressure area on the contact surface between the exhaust hole and the wafer by opening an exhaust hole on the upper surface of the first heating plate, so as to tightly adsorb the wafer on the upper surface of the first heating plate, thereby ensuring that the wafer is firmly attached to the first heating plate during the entire heating process, avoiding the wafer from shifting during the heating process, improving the uniformity of the wafer during thin film deposition, and thus improving the production yield. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] In order to more clearly illustrate the specific implementation methods of the utility model or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the utility model. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0031] Figure 1 This is a schematic diagram of a heating plate structure according to an embodiment of the utility model;
[0032] Figure 2 for Figure 1 A schematic diagram of the internal structure of the first heating plate in the heating plate structure shown;
[0033] Figure 3 for Figure 1 A top view of a first heating plate in the heating plate structure shown;
[0034] Figure 4 for Figure 1A bottom view of the first heating plate in the heating plate structure shown;
[0035] Figure 5 for Figure 1 A schematic structural diagram of a second heating plate in the heating plate structure shown;
[0036] Figure 6 for Figure 1 A top view of the second heating plate in the heating plate structure shown;
[0037] Figure 7 for Figure 1 A bottom view of the second heating plate in the heating plate structure is shown.
[0038] Description of reference numerals:
[0039] 1. First heating plate; 101. First exhaust channel; 102. Exhaust hole; 103. Exhaust hole; 2. Exhaust pipe; 3. Second heating plate; 301. Second exhaust channel; 302. Mounting groove; 303. Inlet channel; 304. Guide groove; 4. Third heating plate; 5. Inlet pipe. DETAILED DESCRIPTION
[0040] In order to make the purpose, technical solution and advantages of the embodiment of the utility model clearer, the technical solution in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model. Obviously, the described embodiment is a part of the embodiment of the utility model, not all the embodiments. Based on the embodiment of the utility model, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the utility model.
[0041] In the related art, when depositing a thin film, the heater is energized to convert electrical energy into thermal energy. In order to make the working temperature in the chamber reach or exceed the temperature required for the reaction, it is often necessary to use airflow to achieve a uniform temperature in the chamber. However, due to problems such as airflow or processing methods, the position of the wafer may shift during the heating process, and the effective working distance of the thin film deposition will change, resulting in uneven thin film deposition and affecting product performance.
[0042] In order to solve the above technical problems, the following Figures 1 to 7 , describing an embodiment of the utility model.
[0043] According to an embodiment of the present utility model, on the one hand, combined with Figures 1 to 7 As shown, a heating plate structure is provided, including a first heating plate 1 and an exhaust pipe 2.
[0044] Specifically, combined Figures 1 to 4As shown, a first exhaust channel 101 is provided in the first heating plate 1, and an exhaust hole 102 is provided on the upper surface of the first heating plate 1, and the exhaust hole 102 is connected to the first exhaust channel 101. The upper surface of the first heating plate 1 is suitable for placing a wafer (not shown in the figure), and the wafer cover is arranged on the exhaust hole 102.
[0045] Specifically, combined Figure 1 and Figure 2 As shown, one end of the exhaust pipe 2 is connected to the first exhaust channel 101, and the other end of the exhaust pipe 2 is suitable for connecting to a driving member (not shown in the figure), and the driving member is used to exhaust air in and out of the exhaust pipe 2.
[0046] This heating plate structure has an exhaust hole 102 on the upper surface of the first heating plate 1 and is connected to the internal first exhaust channel 101. When the driving member starts to exhaust the exhaust pipe 2, the gas in the first exhaust channel 101 and the exhaust hole 102 will be exhausted, so that a negative pressure area is formed on the contact surface between the exhaust hole 102 and the wafer, which can effectively adsorb the lower surface of the wafer and tightly adsorb the wafer on the upper surface of the first heating plate 1, ensuring that the wafer is firmly attached to the first heating plate 1 during the entire heating process, avoiding wafer deviation during the heating process, improving the uniformity of the wafer during thin film deposition, and thereby improving the production yield.
[0047] Specifically, the driving component can be any existing driving component such as a mechanical vacuum pump, a vortex vacuum pump, an electric vacuum pump, etc. In the embodiment of the present application, there is no specific restriction on the type of the driving component.
[0048] Specifically, the exhaust pipe 2 can be connected to the first exhaust channel 101 by fixing the exhaust pipe 2 on the first exhaust channel 101 and connecting the two, or the exhaust pipe 2 can be detachably set on the first exhaust channel 101 and connect the two. In the embodiment of the present application, there is no specific restriction on the connection method between the exhaust pipe 2 and the first exhaust channel 101.
[0049] Specifically, when the wafer is placed on the upper surface of the first heating plate 1, ensure that the wafer cover is placed on the exhaust hole 102. The exhaust hole 102 can be set at any position on the upper surface of the first heating plate 1. In the embodiment of the present application, the position of the exhaust hole 102 is not specifically restricted.
[0050] Specifically, the exhaust holes 102 can be arranged on the first heating plate 1 at an angle, or can be arranged on the first heating plate 1 vertically. In the embodiment of the present application, the arrangement of the exhaust holes 102 is not specifically limited.
[0051] In one embodiment, Figure 2 and Figure 3 As shown, the air extraction hole 102 is arranged near the central area of the upper surface of the first heating plate 1 .
[0052] By arranging the exhaust hole 102 near the center area of the first heating plate 1, negative pressure can be generated more evenly under the wafer, ensuring that the lower surface of the wafer is evenly adsorbed. Even large-sized wafers can obtain a good overall adsorption effect, avoiding the wafer from shifting or deforming due to uneven local suction during the heating process, thereby improving the stability and uniformity of wafer processing.
[0053] In one embodiment, Figure 2 As shown, the exhaust hole 102 is inclined, and from the lower surface of the first heating plate 1 to the upper surface of the first heating plate 1, the exhaust hole 102 is inclined from the central area close to the first heating plate 1 to the direction away from the central area of the first heating plate 1.
[0054] The exhaust holes 102 are inclined from the center area of the first heating plate 1 to the edge, which helps the gas to form a more effective flow path under the wafer, speed up the exhaust speed, and improve the efficiency of vacuuming. The inclined design can facilitate the smooth discharge of gas, reduce blind spots, and ensure that the vacuum degree of each area under the wafer is more uniform. At the same time, the inclined exhaust holes 102 are helpful to set a plurality of exhaust holes 102 that intersect and communicate with each other on the first heating plate 1.
[0055] Specifically, the inclination angle of the air extraction hole 102 relative to the horizontal plane may be 45°, 50°, 60°, etc. In the embodiment of the present application, the inclination angle of the air extraction hole 102 is not specifically limited.
[0056] In one embodiment, Figure 2 and Figure 3 As shown, a plurality of air extraction holes 102 are arranged at intervals, and one end of each of the plurality of air extraction holes 102 is connected to one end of the first air extraction channel 101 .
[0057] Multiple suction holes 102 are distributed at intervals on the upper surface of the first heating plate 1, and can adsorb multiple areas of the lower surface of the wafer, ensuring a more uniform vacuum degree on the lower surface of the wafer, and avoiding excessive or weak local suction force caused by a single suction hole 102. If a single suction hole 102 is blocked or fails, the other suction holes 102 can still maintain a sufficient vacuum degree to ensure the normal operation of the system, thereby enhancing the reliability and stability of the system.
[0058] Specifically, the plurality of air extraction holes 102 may be distributed in a ring shape or a straight line shape, etc. In the embodiment of the present application, the distribution form of the plurality of air extraction holes 102 is not specifically limited.
[0059] In one embodiment, in combination Figure 1 and Figure 5As shown, the second heating plate 3 and the third heating plate 4 are also included, and a heating element is arranged between the second heating plate 3 and the third heating plate 4. The first heating plate 1, the second heating plate 3 and the third heating plate 4 are arranged in sequence from top to bottom, and the second heating plate 3 and the third heating plate 4 are both provided with a second air extraction channel 301, the second air extraction channel 301 is communicated with the first air extraction channel 101, and the air extraction pipe 2 is communicated with the second air extraction channel 301.
[0060] By adding a second heating plate 3 and a third heating plate 4 under the first heating plate 1, and setting a heating element between the second heating plate 3 and the third heating plate 4, the heating element first heats the second heating plate 3, and the second heating plate 3 contacts the first heating plate 1, and evenly transfers heat to the first heating plate 1, ensuring the uniformity of the surface temperature of the first heating plate 1. In addition, the design of setting multiple layers of heating plates can more efficiently utilize heat, reduce heat loss, and improve the overall heating efficiency and response speed.
[0061] A second exhaust channel 301 is opened on the second heating plate 3 and the third heating plate 4 corresponding to the first exhaust channel 101, and the exhaust pipe 2 can be set at the bottom of the third heating plate 4 to exhaust the exhaust hole 102, thereby reducing the chamber space occupied by the heating plate structure.
[0062] In one embodiment, Figure 7 As shown, a mounting groove 302 is provided on the lower surface of the second heating plate 3 , and the mounting groove 302 is suitable for mounting a heating element.
[0063] By building the heating element into the mounting groove 302 of the second heating plate 3, the overall structure can be made more compact and the space occupied by the device can be reduced. The heating element is installed in the second heating plate 3, which helps to improve the heating efficiency. At the same time, by rationally designing the structure of the mounting groove 302, the uniform distribution of heat on the surface of the second heating plate 3 can be promoted, hot spots can be reduced, and the uniformity of heating can be ensured. By setting the heating element in the mounting groove 302, when assembling the second heating plate 3 and the third heating plate 4, the gap between the second heating plate 3 and the third heating plate 4 can be reduced.
[0064] Specifically, the first heating plate 1, the second heating plate 3 and the third heating plate 4 can be fixed by welding so that there is no gap between the parts, which effectively improves the air tightness of the heating plate structure. In the embodiment of the present application, no specific restrictions are imposed on the connection method of the first heating plate 1, the second heating plate 3 and the third heating plate 4.
[0065] Specifically, the mounting groove 302 can be set to any existing shape such as an arc shape, a straight line shape, a mesh shape, etc. In the embodiment of the present application, the shape of the mounting groove 302 is not specifically limited.
[0066] In one embodiment, in combination Figures 1 to 7As shown, a plurality of air outlet holes 103 are formed on the upper surface of the first heating plate 1, and an air inlet channel 303 is formed on the second heating plate 3 and the third heating plate 4, and the air inlet channel 303 is connected to the air outlet holes 103. The air inlet channel 303 is connected to the air inlet pipe 5.
[0067] Gas is input into the air inlet channel 303 of the second heating plate 3 and the third heating plate 4 through the air inlet pipe 5, and the gas carries the heat around the second heating plate 3 and is discharged from the air outlet 103 of the first heating plate 1, which helps to establish a stable hot air flow in the chamber and improve the utilization efficiency of thermal energy. The flow of gas can accelerate the transfer of heat, make the heat distribution more uniform, shorten the heating time, and improve production efficiency.
[0068] In one embodiment, Figure 5 and Figure 6 As shown, a guide groove 304 communicating with the corresponding air inlet channel 303 is formed on the upper surface of the second heating plate 3 , and the guide groove 304 is communicated with the air outlet 103 .
[0069] The guide groove 304 can effectively guide the gas flow, ensuring that the gas enters from the air inlet channel 303 and flows to the air outlet 103 evenly and efficiently along a predetermined path, which can reduce the turbulence of the gas flow and avoid the formation of local overheating or cold areas, thereby improving the uniformity and efficiency of heating.
[0070] Specifically, Figure 5 and Figure 6 As shown, the guide groove 304 can be set in any existing shape such as a ring, a mesh, or a combination of a ring and a straight line. In the embodiment of the present application, the shape of the guide groove 304 is not specifically limited.
[0071] In one embodiment, Figure 2 As shown, the air outlet 103 is inclined, and from the lower surface of the first heating plate 1 to the upper surface of the first heating plate 1, the air outlet 103 is inclined from the central area close to the first heating plate 1 to the direction away from the central area of the first heating plate 1.
[0072] The air outlet 103 is tilted so that the air outlet 103 can be set at the edge area of the first heating plate 1, which can avoid the placement of the wafer and prevent the wafer from blocking the air outlet 103. At the same time, the tilted air outlet 103 can promote the rapid discharge of hot air inside the heating plate structure, accelerate the heat dissipation process, and help maintain the thermal stability of the heating plate.
[0073] Specifically, the inclination angle of the air outlet 103 relative to the horizontal plane can be 45°, 30°, 20°, etc. In the embodiment of the present application, the inclination angle of the air outlet 103 is not specifically limited.
[0074] The working principle of the heating plate structure in this embodiment is described as follows:
[0075] The wafer is placed on the upper surface of the first heating plate 1 , and the wafer cover is placed on the exhaust hole 102 .
[0076] When the driving part starts to evacuate the exhaust pipe 2, the gas in the first exhaust channel 101 and the exhaust hole 102 will be extracted, so that a negative pressure area is formed on the contact surface between the exhaust hole 102 and the wafer, which can effectively adsorb the lower surface of the wafer and tightly adsorb the wafer on the upper surface of the first heating plate 1, ensuring that the wafer is firmly attached to the first heating plate 1 during the entire heating process, avoiding wafer deviation during the heating process, improving the uniformity of the wafer during thin film deposition, and thereby improving the production yield.
[0077] The second heating plate 3 is heated by the heating element, and gas is input into the air inlet channel 303 of the second heating plate 3 and the third heating plate 4 through the air inlet pipe 5. The gas carries the heat around the second heating plate 3 and is discharged from the air outlet 103 of the first heating plate 1, which helps to establish a stable hot air flow in the chamber and improve the utilization efficiency of thermal energy. The flow of gas can accelerate the transfer of heat and make the heat distribution more uniform.
[0078] According to an embodiment of the present utility model, on the other hand, in combination Figures 1 to 7 As shown, a thin film deposition device is also provided, including a chamber (not shown in the figure) and a heating plate structure.
[0079] Specifically, the first heating plate 1 is arranged in the chamber.
[0080] This thin film deposition device sets a heating plate structure in a chamber, and forms a negative pressure area on the contact surface between the exhaust hole 102 and the wafer by opening an exhaust hole 102 on the upper surface of the first heating plate 1, so that the wafer is tightly adsorbed on the upper surface of the first heating plate 1, ensuring that the wafer is firmly attached to the first heating plate 1 during the entire heating process, avoiding the wafer from shifting during the heating process, improving the uniformity of the wafer during thin film deposition, and thereby improving the production yield.
[0081] Although the embodiments of the present invention are described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the appended claims.
Claims
1. A heating plate structure, characterized in that: include: A first heating plate (1) is provided with a first exhaust channel (101) therein, an exhaust hole (102) in communication with the first exhaust channel (101) is provided on the upper surface of the first heating plate (1), and the upper surface of the first heating plate (1) is suitable for placing a wafer and the wafer cover is arranged on the exhaust hole (102); The air extraction pipe (2) has one end in communication with the first air extraction channel (101) and the other end suitable for being connected to a driving member, the driving member being used to extract air from the air extraction pipe (2).
2. The heating plate structure according to claim 1, characterized in that: The air extraction hole (102) is arranged close to the central area of the upper surface of the first heating plate (1).
3. The heating plate structure according to claim 2, characterized in that: The exhaust hole (102) is arranged obliquely, and in the direction from the lower surface of the first heating plate (1) to the upper surface of the first heating plate (1), the exhaust hole (102) is inclined from a central area close to the first heating plate (1) to a central area away from the first heating plate (1).
4. The heating plate structure according to claim 3, characterized in that: A plurality of the air extraction holes (102) are arranged at intervals, and one end of each of the plurality of air extraction holes (102) is connected to one end of the first air extraction channel (101).
5. The heating plate structure according to any one of claims 1 to 4, characterized in that: It also comprises a second heating plate (3) and a third heating plate (4), a heating element being arranged between the second heating plate (3) and the third heating plate (4), the first heating plate (1), the second heating plate (3) and the third heating plate (4) being arranged in sequence from top to bottom, the second heating plate (3) and the third heating plate (4) being provided with a second exhaust channel (301) communicating with the first exhaust channel (101), and the exhaust pipe (2) being communicated with the second exhaust channel (301).
6. The heating plate structure according to claim 5, characterized in that: The lower surface of the second heating plate (3) is provided with a mounting groove (302), and the heating element is arranged in the mounting groove (302).
7. The heating plate structure according to claim 5, characterized in that: The upper surface of the first heating plate (1) is provided with a plurality of air outlet holes (103), and the second heating plate (3) and the third heating plate (4) are both provided with air inlet channels (303) connected to the air outlet holes (103), and the air inlet channels (303) are connected to an air inlet pipe (5).
8. The heating plate structure according to claim 7, characterized in that: The upper surface of the second heating plate (3) is provided with a guide groove (304) connected to the corresponding air inlet channel (303), and the guide groove (304) is connected to the air outlet hole (103).
9. The heating plate structure according to claim 8, characterized in that: The air outlet holes (103) are arranged obliquely, and in a direction from the lower surface of the first heating plate (1) to the upper surface of the first heating plate (1), the air outlet holes (103) are inclined from a central area close to the first heating plate (1) to a direction away from a central area of the first heating plate (1).
10. A thin film deposition device, characterized in that: include: Chamber; The heating plate structure according to any one of claims 1 to 9, wherein the first heating plate (1) is arranged in the chamber.