Silicon core growth equipment

Abstract

The utility model discloses silicon core growing equipment which comprises a lifting device, a rotating device and a multi-shaft box, the multi-shaft box is connected with a plurality of groups of silicon seed crystals, the lifting device comprises a lifting mechanism and a tungsten wire rope connected with the lifting mechanism, the tungsten wire rope is connected with the multi-shaft box, the rotating device is connected with the lifting device, and the multi-shaft box lifts the multi-shaft box through the tungsten wire rope. According to the technical scheme that the supporting piece rotation motor located outside the furnace body drives the tungsten wire rope to rotate so as to control the silicon seed crystal to rotate, a high-temperature motor in a vacuum cavity in the prior art and various complex mechanisms brought by the high-temperature motor are omitted, cost is greatly saved, the equipment failure rate is reduced, the structure is simple, and safety and reliability are achieved. Meanwhile, rotation of the tungsten wire rope is used as input power for rotation of the silicon seed crystal, convenience is provided for upgrading of products, improvement of existing silicon core growth equipment can be completed only by adding a multi-shaft box and connecting the multi-shaft box with the original tungsten wire rope, and transformation is simple.

Description

Technical Field

[0001] The utility model belongs to the field of silicon core production and relates to silicon core growth equipment. Background Art

[0002] Most traditional multi-axis crystal pulling machines use motors to control the silicon core to rotate in a furnace. Due to the working conditions, the multi-axis box is used at high temperatures and in a vacuum chamber, which requires the motor to be resistant to both high temperatures and negative pressure. The motor is very prone to short circuits in a vacuum chamber, resulting in a high failure rate, which greatly increases the cost of the motor. At the same time, the motor's cables and signal lines also have high requirements, requiring them to be soft and wear-resistant. A special mechanism needs to be designed to retract and release the wires, which increases the cost. During the crystal pulling process, the failure rate of the motor and wires is very high, which has seriously affected production efficiency. Summary of the invention

[0003] In order to overcome at least one deficiency of the prior art, the utility model provides a silicon core growth device.

[0004] In order to achieve the above-mentioned purpose, the utility model adopts the following technical scheme: a silicon core growth device, including a lifting device, a rotating device and a multi-axis box, the multi-axis box is connected to multiple groups of silicon seed crystals, the lifting device includes a lifting mechanism and a tungsten wire rope connected to the lifting mechanism, the tungsten wire rope is connected to the multi-axis box, the rotating device is connected to the lifting device, the multi-axis box lifts and lowers the multi-axis box through the tungsten wire rope, and the rotating device rotates the silicon seed crystals by rotating the lifting device and the tungsten wire rope.

[0005] Furthermore, the rotating device includes a rotating bracket and a supporting rotating motor. The rotating bracket is fixed on the auxiliary furnace chamber. The lifting device can be rotatably connected above the rotating bracket. The supporting rotating motor is fixed on the rotating bracket or the auxiliary furnace chamber. The motor output shaft of the supporting rotating motor is connected to the lifting device.

[0006] Furthermore, the lifting mechanism includes a winding shaft support, a lifting winding shaft and a winding shaft rotating motor. The winding shaft rotating motor is fixed on the winding shaft support. The lifting winding shaft is located inside the winding shaft support. The motor output shaft of the winding shaft rotating motor is connected to the lifting winding shaft. The tungsten wire rope is wound on the lifting winding shaft.

[0007] Furthermore, the multi-axis box includes a box body and a gear transmission mechanism, the gear transmission mechanism is located in the box body, the tungsten wire rope is connected to the box body through a bearing, the tungsten wire rope is connected to the gear transmission mechanism, and the gear transmission mechanism is connected to the silicon seed crystal.

[0008] Furthermore, the gear transmission mechanism includes an input gear, an intermediate gear, a transmission gear, an intermediate large gear, and an output gear. The intermediate gear and the intermediate large gear are respectively composed of two coaxially arranged gears. The transmission gear is coaxially connected to the intermediate large gear. The input gear is meshed with the intermediate gear, the intermediate gear is meshed with the transmission gear, the intermediate large gear is meshed with a plurality of output gears, and the output gear is connected to the silicon seed crystal.

[0009] Furthermore, the input gear is rotationally connected to the housing via an input shaft, and the input shaft is fixedly connected to the tungsten wire rope.

[0010] Furthermore, the intermediate gear includes a first gear and a second gear arranged coaxially, the intermediate large gear includes a third gear and a fourth gear arranged coaxially, the first gear is meshed and connected with the input gear, the second gear is meshed and connected with the transmission gear, the output gear is divided into a first output gear and a second output gear, the third gear is meshed and connected with a plurality of first output gears, and the fourth gear is meshed and connected with a plurality of second output gears.

[0011] Furthermore, the first output gear and the second output gear are distributed in inner and outer circles with the middle large gear as the center.

[0012] Furthermore, the rotation speed of the silicon seed crystal is set to 10 rpm, and the torque is set to 0.26 Nm.

[0013] Furthermore, the torque input by the tungsten wire rope is set to 3 Nm, the rotation speed is set to 40 rpm, and the total transmission ratio of the gear transmission mechanism is 1:4.

[0014] In summary, the utility model is beneficial in that:

[0015] The utility model uses a technical solution that drives the rotation of the tungsten wire rope by a rotary motor of a support located outside the furnace body and then controls the rotation of the silicon seed crystal, eliminates the high-temperature motor in the vacuum chamber in the existing solution, and various complex mechanisms brought about by the high-temperature motor, reduces the equipment failure rate, has a simple structure, is safe and reliable, and at the same time uses the rotation of the tungsten wire rope as the input power for the rotation of the silicon seed crystal, which provides convenience for product upgrades. For the existing silicon core growth equipment, it only needs to add a multi-axis box and connect the original tungsten wire rope to complete the equipment improvement, and the transformation is simple. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic diagram of the silicon core growth equipment of the present utility model.

[0017] Figure 2 It is a schematic diagram of the internal structure of the multi-axle box of the utility model.

[0018] Figure 3The figure shows the distribution of the first output gear and the second output gear of the utility model. The figure shows: lifting and lowering wire winding shaft 1, wire winding shaft rotary motor 2, support rotary motor 3, tungsten wire rope 4, multi-axis box 5, silicon core 6, rotary bracket 7, auxiliary furnace chamber 8, main furnace chamber 9, crucible 10, box body 50, input shaft 51, input gear 52, intermediate gear 53, transmission gear 54, intermediate large gear 55, output gear 56, output shaft 57, first output gear 58, and second output gear 59. DETAILED DESCRIPTION

[0019] The following describes the implementation of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0020] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and thus the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed at will, and the component layout may also be more complicated.

[0021] All directional indications in the embodiments of the present invention (such as up, down, left, right, front, back, horizontal, vertical...) are only used to explain the relative position relationship, movement status, etc. between the components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0022] Due to installation errors and other reasons, the parallel relationship referred to in the embodiments of the present invention may actually be an approximately parallel relationship, and the vertical relationship may actually be an approximately vertical relationship.

[0023] Embodiment 1:

[0024] like Figure 1-Figure 3 As shown, a silicon core growth device includes a lifting device, a rotating device and a multi-axis box 5. The multi-axis box 5 is connected to multiple groups of silicon seed crystals. The lifting device includes a lifting mechanism and a tungsten wire rope 4 connected to the lifting mechanism. The tungsten wire rope 4 is connected to the multi-axis box 5. The rotating device is connected to the lifting device. The multi-axis box 5 lifts and lowers the multi-axis box 5 through the tungsten wire rope 4. The rotating device rotates the silicon seed crystals by rotating the lifting device and the tungsten wire rope 4.

[0025] The silicon core growth equipment also includes a furnace body, which includes an auxiliary furnace chamber 8 and a main furnace chamber 9. The auxiliary furnace chamber 8 is arranged above the main furnace chamber 9. The main furnace chamber 9 is equipped with a crucible 10. Silicon materials such as polycrystalline silicon are installed in the crucible 10. The silicon materials are heated and melted to form silicon liquid. The lifting device and the rotating device are located outside and above the auxiliary furnace chamber 8. The rotating device is fixed in the auxiliary furnace chamber 8. The lifting device is connected above the rotating device. The rotating device controls the rotation of the lifting device and then controls the rotation of the tungsten wire rope 4. The rotation of the tungsten wire rope 4 controls the rotation of the silicon seed crystal. The lifting device controls the lifting of the tungsten wire rope 4 to lift and lower the multi-axis box 5 and then controls the lifting and lowering of the silicon seed crystal. When pulling the crystal, the silicon seed crystal first contacts with the silicon liquid. Under the action of the lifting device and the rotating device, the silicon seed crystal is lifted upward and rotated at the same time, so that the diameter of the silicon seed crystal gradually increases to form a silicon core 6 until the silicon core 6 is generated.

[0026] The rotating device includes a rotating bracket 7 and a supporting rotating motor 3. The rotating bracket 7 is fixed on the upper end surface of the auxiliary furnace chamber 8. The lifting device can be rotatably connected above the rotating bracket 7. The lifting device rotates relative to the rotating bracket 7. The rotating bracket 7 can support the lifting device. The supporting rotating motor 3 is fixed on the rotating bracket 7 or the auxiliary furnace chamber 8. The motor output shaft of the supporting rotating motor 3 is connected to the lifting device. The supporting rotating motor 3 starts to drive the lifting device as a whole to rotate relative to the rotating bracket 7, thereby realizing the rotation of the tungsten wire rope 4 and then controlling the silicon seed crystal to rotate at the set speed. The present application adopts a technical solution that drives the tungsten wire rope 4 to rotate and then controls the rotation of the silicon seed crystal through a support rotary motor 3 located outside the furnace body, eliminates the high-temperature motor in the vacuum chamber in the existing solution, and the various complex mechanisms brought about by the high-temperature motor, thereby greatly saving costs and reducing the equipment failure rate. The structure is simple, safe and reliable, and at the same time, the rotation of the tungsten wire rope is used as the input power for the rotation of the silicon seed crystal, which provides convenience for product upgrades. For the existing silicon core growth equipment, it only needs to add a multi-axis box and connect the original tungsten wire rope to complete the equipment improvement. The transformation is simple and the cost is low.

[0027] The lifting device includes a lifting mechanism and a tungsten wire rope 4 connected to the lifting mechanism. The lifting mechanism includes a wire winding shaft support, a lifting wire winding shaft 1 and a wire winding shaft rotating motor 2. The wire winding shaft support can be rotatably connected above the rotating bracket 7. The wire winding shaft rotating motor 2 is fixed to the wire winding shaft support. The lifting wire winding shaft 1 is located inside the wire winding shaft support. The motor output shaft of the wire winding shaft rotating motor 2 is connected to the lifting wire winding shaft 1. The tungsten wire rope 4 is wound on the lifting wire winding shaft 1. The wire winding shaft rotating motor 2 starts and drives the lifting wire winding shaft 1 to rotate, thereby realizing the retraction and release of the tungsten wire rope 4, so that the tungsten wire rope 4 pulls the multi-axis box 5 and lifts it according to the set crystal growth speed.

[0028] The multi-axis box 5 includes a box body 50 and a gear transmission mechanism. The gear transmission mechanism is located in the box body 50. The tungsten wire rope 4 is connected to the box body 50 through a bearing, so that the rotation of the tungsten wire rope 4 can drive the box body 50 to rise and fall, while the rotation of the tungsten wire rope 4 will not drive the box body 50 to rotate. The tungsten wire rope 4 extends to the inside of the box body 50 and is connected to the gear transmission mechanism, so that the tungsten wire rope 4 serves as the input power of the gear transmission mechanism to drive the gear transmission mechanism to rotate the silicon seed crystal.

[0029] The gear transmission mechanism includes an input gear 52, an intermediate gear 53, a transmission gear 54, an intermediate large gear 55, and an output gear 56. The intermediate gear 53 and the intermediate large gear 55 are respectively composed of two coaxially arranged gears. The transmission gear 54 is coaxially connected with the intermediate large gear 55. The input gear 52 is meshedly connected with the intermediate gear 53. The intermediate gear 53 is meshedly connected with the transmission gear 54. The intermediate large gear 55 is meshedly connected with a plurality of output gears 56. An output shaft 57 is fixedly provided at the center of the output gear 56, and the silicon seed crystal is fixedly provided on the output shaft 57.

[0030] The input gear 52 is rotationally connected to the housing 50 via the input shaft 51 , and the input shaft 51 is fixedly connected to the tungsten wire rope 4 , thereby realizing the power input of the tungsten wire rope 4 .

[0031] The rotational power of the tungsten wire rope 4 is transmitted to the silicon seed crystal through the input gear 52, the intermediate gear 53, the transmission gear 54, the intermediate large gear 55 and the output gear 56, so as to realize the rotation of the silicon seed crystal.

[0032] like Figure 2 As shown, the intermediate gear 53 includes a first gear and a second gear arranged coaxially, and the intermediate large gear 55 includes a third gear and a fourth gear arranged coaxially. The first gear is meshed and connected with the input gear 52, and the second gear is meshed and connected with the transmission gear 54. For the convenience of distinction, the output gear 56 is divided into a first output gear 58 and a second output gear 59. The third gear is meshed and connected with a plurality of first output gears 58, and the fourth gear is meshed and connected with a plurality of second output gears 59. The first output gear 58 and the second output gear 59 are distributed up and down, as shown in FIG. Figure 3 As shown, the first output gear 58 and the second output gear 59 are distributed in inner and outer circles with the middle large gear 55 as the center.

[0033] The number and distribution of silicon seed crystals can be set according to actual needs. In this embodiment, the silicon seed crystals are distributed in coaxial inner and outer circles, and the number of silicon seed crystals is set to 46.

[0034] The present application controls the rotation speed and torque of the silicon seed crystal through a tungsten wire rope 4 and a gear transmission mechanism. The torque input by the tungsten wire rope is set to 3Nm, the rotation speed is set to 40rpm, and the total transmission ratio of the gear transmission mechanism is 1:4. The speed is reduced by the total transmission ratio so that the rotation speed of the silicon seed crystal reaches 10rpm and the torque is 0.26Nm, which fully meets the process requirements of crystal pulling.

[0035] Specifically, the number of teeth of the input gear 52, the intermediate gear 53, and the transmission gear 54 meet the two-stage speed reduction, and the transmission ratio i=25, so that the rotation speed of the intermediate large gear 55 reaches 1.6rpm, and the torque reaches 75Nm. The intermediate large gear 55 is simultaneously engaged with two circles of 46 output gears 56 in total. The number of teeth of the inner and outer ring gears respectively matches the number of teeth of the third gear and the fourth gear of the intermediate large gear 55. The transmission ratio is i=6.25. The rotation speed of the output gear 56 reaches 10rpm, and the torque is 0.26Nm, which fully meets the process requirements of crystal pulling.

[0036] The present application realizes multi-axis crystal pulling by meshing and connecting the middle large gear 55 with a plurality of output gears 56, and connecting the output gears 56 with the silicon seed crystal. Compared with the existing single-axis crystal pulling, the crystal pulling efficiency is higher.

[0037] The illustrations in this application omit other necessary structures in the furnace body for silicon core growth, such as heaters for heating silicon materials, etc. These omitted necessary structures are not improved in this application, so conventional structures on the market or in this field can be adopted and no detailed description is given here.

[0038] The intermediate gear 53 , the transmission gear 54 , the intermediate large gear 55 , and the output gear 56 of the present application are respectively rotatably connected to the box body 50 .

[0039] In other embodiments, the output shaft 5 may be eliminated, and the silicon seed crystal may be directly fixed at the center of the output gear 56 .

[0040] Obviously, the described embodiments are only some embodiments of the utility model, not all embodiments. Based on the embodiments of the utility model, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the utility model.

Claims

1. A silicon core growth device, characterized in that: It includes a lifting device, a rotating device and a multi-axis box. The multi-axis box is connected to multiple groups of silicon seed crystals. The lifting device includes a lifting mechanism and a tungsten wire rope connected to the lifting mechanism. The tungsten wire rope is connected to the multi-axis box. The rotating device is connected to the lifting device. The multi-axis box lifts and lowers the multi-axis box through the tungsten wire rope. The rotating device rotates the silicon seed crystals by rotating the lifting device and the tungsten wire rope.

2. The silicon core growth device according to claim 1, characterized in that: The rotating device includes a rotating bracket and a supporting rotating motor. The rotating bracket is fixed on the auxiliary furnace chamber. The lifting device is rotatably connected above the rotating bracket. The supporting rotating motor is fixed on the rotating bracket or the auxiliary furnace chamber. The motor output shaft of the supporting rotating motor is connected to the lifting device.

3. The silicon core growth device according to claim 1, characterized in that: The lifting mechanism includes a winding shaft support, a lifting winding shaft and a winding shaft rotating motor. The winding shaft rotating motor is fixed on the winding shaft support. The lifting winding shaft is located inside the winding shaft support. The motor output shaft of the winding shaft rotating motor is connected to the lifting winding shaft. The tungsten wire rope is wound on the lifting winding shaft.

4. The silicon core growth device according to claim 1, characterized in that: The multi-axis box comprises a box body and a gear transmission mechanism, the gear transmission mechanism is located in the box body, the tungsten wire rope is connected to the box body through a bearing, the tungsten wire rope is connected to the gear transmission mechanism, and the gear transmission mechanism is connected to the silicon seed crystal.

5. The silicon core growth device according to claim 4, characterized in that: The gear transmission mechanism includes an input gear, an intermediate gear, a transmission gear, an intermediate large gear, and an output gear. The intermediate gear and the intermediate large gear are respectively composed of two coaxially arranged gears. The transmission gear is coaxially connected to the intermediate large gear. The input gear is meshed with the intermediate gear, the intermediate gear is meshed with the transmission gear, the intermediate large gear is meshed with a plurality of output gears, and the output gear is connected to the silicon seed crystal.

6. The silicon core growth device according to claim 5, characterized in that: The input gear is rotatably connected to the box body through an input shaft, and the input shaft is fixedly connected to the tungsten wire rope.

7. The silicon core growth device according to claim 5, characterized in that: The intermediate gear includes a first gear and a second gear which are coaxially arranged, the intermediate large gear includes a third gear and a fourth gear which are coaxially arranged, the first gear is meshed and connected with the input gear, the second gear is meshed and connected with the transmission gear, the output gear is divided into a first output gear and a second output gear, the third gear is meshed and connected with a plurality of first output gears, and the fourth gear is meshed and connected with a plurality of second output gears.

8. The silicon core growth device according to claim 7, characterized in that: The first output gear and the second output gear are distributed in inner and outer circles with the middle large gear as the center.

9. The silicon core growth device according to claim 4, characterized in that: The rotation speed of the silicon seed crystal is set to 10 rpm, and the torque is set to 0.26 Nm.

10. The silicon core growth device according to claim 4, characterized in that: The torque input by the tungsten wire rope is set to 3Nm, the rotation speed is set to 40rpm, and the total transmission ratio of the gear transmission mechanism is 1:4.

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