Switching valve for epitaxial growth equipment and epitaxial growth equipment

Abstract

The utility model discloses a switch valve for epitaxial growth equipment and epitaxial growth equipment, the switch valve comprises a valve body and a first valve core, the valve body is provided with a first inlet and a first outlet which are communicated with a flow channel, the first inlet is suitable for introducing etching gas for preventing an epitaxial layer on a substrate from depositing, and the first outlet is suitable for introducing etching gas for preventing the epitaxial layer on the substrate from depositing. The central axis of the first outlet obliquely extends downwards in the airflow direction of the first outlet, so that the first outlet is suitable for blowing etching gas to the edge part of the substrate, the first valve element is movably arranged in the flow channel, the switching valve has a first mode and a second mode, and in the first mode, the first valve element is closed; in the first mode, the communicating opening is opposite to the first outlet so that the first outlet can communicate with the first inlet through the flow channel, and in the second mode, the first valve element seals the first outlet so that the first outlet can be separated from the first inlet. According to the switch valve for the epitaxial growth equipment, etching gas is blown to the edge part of the substrate, so that the appearance of the edge part is improved, and the flatness level of an epitaxial layer is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of epitaxial growth, in particular to a switch valve used for epitaxial growth equipment and the epitaxial growth equipment. Background Art

[0002] In the current wafer raw material manufacturing process, silicon epitaxial growth is an important process in semiconductor manufacturing. This process is a method of growing a single crystal layer that meets the requirements on a silicon wafer by controlling the flow of reaction gas and carrier gas under specific temperature and pressure conditions. Specific methods include vacuum epitaxy, vapor phase epitaxy, liquid phase epitaxy, etc. Currently, the most widely used is chemical vapor deposition silicon epitaxy, and its reaction mechanism is to make a highly volatile silicon source, such as TCS (Trichlorosilane), react with hydrogen at high temperature to generate silicon atoms that are deposited on the surface of the substrate layer through mass transfer to form new single crystal silicon.

[0003] Among them, for the epitaxial layer of single crystal silicon, its flatness parameter is an important parameter affecting the performance of semiconductor wafers, and has a positive correlation with the performance of semiconductor devices at the back end. The better the flatness, the higher the yield and performance of the back end process devices. The flatness of the epitaxial layer is usually evaluated by parameters such as local flatness SFQR (Site Front Quadratic Range) & edge flatness ESFQR (Edge Site Front Quadratic Range).

[0004] Therefore, the problem of poor flatness of the epitaxial layer, especially the improvement of the flatness of the edge part, is an issue that needs to be urgently addressed in the industry. In related technologies, the flatness of the epitaxial layer is improved by improving the epitaxial process conditions such as temperature, flow rate, etc., but it is difficult to achieve. Utility Model Content

[0005] The utility model aims to solve at least one of the technical problems existing in the prior art. To this end, the utility model proposes a switch valve for epitaxial growth equipment, which can blow etching gas to the edge of the substrate to improve the morphology of the edge and enhance the flatness level of the epitaxial layer.

[0006] The utility model also provides an epitaxial growth device with the switch valve.

[0007] According to the switch valve for epitaxial growth equipment of the first aspect of the utility model, the epitaxial growth equipment also includes a bearing structure, the bearing structure is used to bear the substrate and drive the substrate to rotate, the switch valve includes: a valve body, a flow channel is formed in the valve body, a first inlet and a first outlet connected to the flow channel are formed on the valve body, the first inlet is suitable for introducing etching gas used to prevent epitaxial layer deposition on the substrate, the first outlet is suitable for being arranged above the bearing structure and suitable for being staggered with the bearing structure in the first horizontal direction, in the gas flow direction at the first outlet, the central axis of the first outlet extends downwardly and tiltedly, so that the first outlet is suitable for blowing etching gas to the edge portion of the substrate; a first valve core, the first valve core is movably arranged in the flow channel, at least one communication port is formed on the first valve core, the switch valve has a first mode and a second mode, in the first mode, the communication port is opposite to the first outlet so that the first outlet is connected to the first inlet through the flow channel, in the second mode, the first valve core closes the first outlet so that the first outlet is isolated from the first inlet.

[0008] According to the switch valve for epitaxial growth equipment of the embodiment of the utility model, the central axis of the first outlet is arranged to extend downwardly in the direction of the airflow, so that the first outlet is suitable for blowing etching gas to the edge portion of the substrate, so as to perform certain etching and cutting on the epitaxial layer at the edge portion of the substrate, improve the morphology of the edge portion, so as to achieve surface flattening of the epitaxial layer at the edge portion of the substrate, which is beneficial to improving the flatness level of the epitaxial layer formed on the substrate, thereby facilitating improving the product yield; moreover, impurities, dust, etc. remaining at the edge portion of the substrate can also be blown out.

[0009] In some embodiments, there are multiple first outlets, and the multiple first outlets are spaced apart in the up-down direction and / or the second horizontal direction. In the first mode, the connecting port is opposite to at least one of the first outlets. The switch valve has multiple first connecting states in the first mode. In different first connecting states, the position and / or number of the first outlets connected to the first inlet are different, and the second horizontal direction is perpendicular to the first horizontal direction.

[0010] In some embodiments, at least two of the multiple first outlets are spaced apart in the up-down direction, and in two adjacent first outlets in the up-down direction, the angle between the center axis of the lower first outlet and the horizontal plane is greater than the angle between the center axis of the upper first outlet and the horizontal plane; and / or, at least two of the multiple first outlets are spaced apart in the second horizontal direction, and in two adjacent first outlets in the second horizontal direction, the angle between the center axis of the outer first outlet and a preset vertical plane is greater than the angle between the center axis of the inner first outlet and the preset vertical plane, and the preset vertical plane passes through the center of the valve body and is parallel to the first horizontal direction.

[0011] In some embodiments, the connecting ports are multiple and include a first connecting port and a second connecting port, and the opening area of ​​the first connecting port is smaller than the opening area of ​​the second connecting port, so that the number of the first outlets that the first connecting port can correspond to is smaller than the number of the first outlets that the second connecting port can correspond to.

[0012] In some embodiments, a second outlet connected to the flow channel is also formed on the valve body, and the second outlet is arranged above the first outlet. In the direction of the air flow at the second outlet, the central axis of the second outlet extends upward at an angle so that the second outlet is suitable for blowing etching gas toward the inner top of the epitaxial growth device. In the first mode, the first valve core closes the second outlet to separate the second outlet from the first inlet. In the second mode, the connecting port is opposite to the second outlet so that the second outlet is connected to the first inlet through the flow channel.

[0013] In some embodiments, there are multiple second outlets, and the multiple second outlets are spaced apart in the up-down direction and / or the second horizontal direction. In the second mode, the connecting port is opposite to at least one second outlet, and the switch valve has multiple second connecting states in the second mode. In different second connecting states, the position and / or number of the second outlets connected to the first inlet are different, and the second horizontal direction is perpendicular to the first horizontal direction.

[0014] In some embodiments, at least two of the multiple second outlets are spaced apart in the up-down direction, and in two adjacent second outlets in the up-down direction, the angle between the center axis of the upper second outlet and the horizontal plane is greater than the angle between the center axis of the lower second outlet and the horizontal plane; and / or, at least two of the multiple second outlets are spaced apart in the second horizontal direction, and in two adjacent second outlets in the second horizontal direction, the angle between the center axis of the outer second outlet and a preset vertical plane is greater than the angle between the center axis of the inner second outlet and the preset vertical plane, and the preset vertical plane passes through the center of the valve body and is parallel to the first horizontal direction.

[0015] In some embodiments, the connecting port is multiple and includes a first connecting port and a second connecting port, and the opening area of ​​the first connecting port is smaller than the opening area of ​​the second connecting port, so that the number of the second outlets that the first connecting port can correspond to is smaller than the number of the second outlets that the second connecting port can correspond to.

[0016] In some embodiments, the switch valve further has a third mode, in which the first valve core closes the first outlet and the second outlet so that the first outlet and the second outlet are both isolated from the first inlet.

[0017] In some embodiments, the connecting port is multiple and includes a first connecting port and a second connecting port, and the switch valve also includes: a second valve core, which is arranged on the side of the first valve core away from the valve body and can move between a blocking position for closing the first connecting port and a avoidance position for opening the first connecting port.

[0018] According to an embodiment of the second aspect of the utility model, the epitaxial growth device includes a shell, a supporting structure and a switch valve for the epitaxial growth device according to the embodiment of the first aspect of the utility model, wherein an epitaxial cavity is defined in the shell, the supporting structure is rotatably disposed in the epitaxial cavity and is used to support a substrate, the switch valve is disposed on the peripheral wall of the shell, the first inlet is suitable for introducing an etching gas for preventing the deposition of an epitaxial layer on the substrate, the first outlet is located above the supporting structure and is offset from the supporting structure in the first horizontal direction, the epitaxial cavity further has a second inlet, and the second inlet is suitable for introducing a reaction gas for forming an epitaxial layer on the substrate into the epitaxial cavity.

[0019] The epitaxial growth equipment according to the embodiment of the utility model is helpful to improve the product yield by adopting the above-mentioned switch valve.

[0020] Additional aspects and advantages of the present invention will be given in part in the following description, and in part will become apparent from the following description, or will be learned through the practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0022] Figure 1 is a cross-sectional view of a switch valve according to an embodiment of the utility model;

[0023] Figure 2 yes Figure 1 Another cross-sectional view of the switch valve shown in ;

[0024] Figure 3 yes Figure 1 Another cross-sectional view of the switch valve shown in ;

[0025] Figure 4 yes Figure 1 Another cross-sectional view of the switch valve shown in ;

[0026] Figure 5 yes Figure 1 Another cross-sectional view of the switch valve shown in ;

[0027] Figure 6 yes Figure 1 Another cross-sectional view of the switch valve shown in ;

[0028] Figure 7 yes Figure 1 Another cross-sectional view of the switch valve shown in ;

[0029] Figure 8 yes Figure 1 A partial schematic diagram of the arrangement of the first outlet and the second outlet of the switch valve shown in ;

[0030] Fig. 9 is a schematic diagram of an epitaxial growth device according to an embodiment of the utility model;

[0031] Fig.10 yes Fig. 9 A schematic top view of the epitaxial growth apparatus shown in ;

[0032] FIG. 11( a ) is a schematic diagram of the 3D morphology of a substrate after epitaxial growth process in the prior art;

[0033] FIG11( b ) is a schematic diagram of the 3D morphology of FIG11( a ) after etching using the switch valve of the present application;

[0034] FIG. 12( a ) is a diagram showing the local flatness of a substrate after an epitaxial growth process in the prior art;

[0035] FIG. 12( b ) shows the local flatness of FIG. 12( a ) after etching using the switch valve of the present application.

[0036] Reference numerals:

[0037] Epitaxial growth equipment 200, shell 101, epitaxial cavity 101a, supporting structure 102, switch valve 100, substrate 201, preset vertical plane R1, valve body 1, flow channel 10, first outlet 10a, central axis L1 of the first outlet, first outlet group 10b, second outlet 10c, central axis L2 of the second outlet, second outlet group 10d, first valve core 2, connecting port 20, first connecting port 20a, second connecting port 20b, second valve core 3. DETAILED DESCRIPTION

[0038] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0039] The disclosure below provides many different embodiments or examples for realizing different structures of the utility model. In order to simplify the disclosure of the utility model, the components and settings of specific examples are described below. Of course, they are merely examples, and the purpose is not to limit the utility model. In addition, the utility model can repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed. In addition, the utility model provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the applicability of other processes and / or the use of other materials.

[0040] Hereinafter, with reference to the accompanying drawings, a switch valve 100 for an epitaxial growth device 200 according to an embodiment of the present invention will be described.

[0041] like Fig. 9 As shown, the epitaxial growth device 200 further includes a supporting structure 102 , which is used to support the substrate 201 and drive the substrate 201 to rotate, and its rotation axis extends vertically. The epitaxial growth device 200 is used to achieve epitaxial growth of the substrate 201 .

[0042] like Figure 1-Figure 3As shown, the switch valve 100 includes a valve body 1, a flow channel 10 is formed in the valve body 1, and a first inlet and a first outlet 10a connected to the flow channel 10 are formed on the valve body 1. The first inlet is suitable for passing an etching gas for preventing the deposition of an epitaxial layer on the substrate 201, and the first outlet 10a is suitable for being arranged above the supporting structure 102, and the first outlet 10a is suitable for connecting with the supporting structure 102 in a first horizontal direction (for example Figure 1 AA' direction in the first horizontal direction), so that the first outlet 10a is suitable for being staggered with the center of the substrate 201 in the first horizontal direction. In other words, on the horizontal plane, the orthographic projection of the outer contour of the first outlet 10a and the orthographic projection of the center of the substrate 201 are spaced apart in the first horizontal direction; wherein, in the gas flow direction at the first outlet 10a, the central axis of the first outlet 10a extends downwardly and obliquely, so that the first outlet 10a is suitable for blowing the etching gas to the edge portion of the substrate 201. Exemplarily, the first horizontal direction is the left-right direction, and the first outlet 10a can be arranged on the left or right side of the supporting structure 102; of course, if the first horizontal direction is the front-back direction, the first outlet 10a can be arranged on the front side or the rear side of the supporting structure 102.

[0043] It can be seen that the central axis of the first outlet 10a is inclined relative to the horizontal plane, so that the central axis of the first outlet 10a forms a non-zero angle α with the horizontal plane (for example Figure 1 The α1 and α2 shown in the figure are both non-zero angles), the first outlet 10a is suitable for blowing out the etching gas that is blown obliquely downward, then the etching gas blown out from the first outlet 10a can have certain component velocities in the first horizontal direction and the up and down directions respectively, and the first outlet 10a is located above the supporting structure 102 and is misaligned with the supporting structure 102 in the first horizontal direction. Then, during the etching process, the first outlet 10a can be located above the substrate 201 and the first outlet 10a and the substrate 201 are misaligned in the first horizontal direction, so that the etching gas at the first outlet 10a can be blown downward toward the edge portion of the substrate 201, so as to perform certain etching and cutting on the epitaxial layer at the edge portion of the substrate 201, improve the morphology of the edge portion, so as to achieve surface flattening of the epitaxial layer at the edge portion of the substrate 201, which is beneficial to improving the flatness level of the epitaxial layer formed on the substrate 201.

[0044] In addition, the etching gas blown out from the first outlet 10a can also blow out impurities, dust, etc. remaining on the edge of the substrate 201 to a certain extent, and the gas is not easy to form high Reynolds number gas flow modes such as backflow and turbulence, which increases the predictability and simulatability of the epitaxial morphology formation process of the substrate 201.

[0045] The switch valve 100 further includes a first valve core 2, which is movably disposed in the flow channel 10. At least one communication port 20 is formed on the first valve core 2. The switch valve 100 has a first mode and a second mode. In the first mode, the communication port 20 is opposite to the first outlet 10a so that the first outlet 10a is connected to the first inlet through the flow channel 10. In the second mode, the first valve core 2 closes the first outlet 10a so that the first outlet 10a is isolated from the first inlet. Obviously, in the first mode, the etching gas can be blown out from the first outlet 10a. In the second mode, all the communication ports 20 are misaligned with the first outlet 10a so that the first outlet 10a cannot be connected to the first inlet through the flow channel 10, and the etching gas cannot be blown out from the first outlet 10a, so as to realize the switch valve 100 to control the etching gas.

[0046] Compared with some technologies, the epitaxial growth device 200 is formed with an inlet for blowing etching gas into the epitaxial growth device 200, the inlet is located above the supporting structure 102 and is offset from the supporting structure 102 in the first horizontal direction, and the central axis of the inlet is parallel to the horizontal plane, so that the etching gas is blown horizontally into the epitaxial growth device 200. In this scheme, the flatness of the epitaxial layer on the substrate 201 is poor. As shown in FIG11(a) , a schematic diagram of the 3D morphology of the substrate 201 after the epitaxial growth process is shown. It is found that the area with a large local flatness SFQR value of the epitaxial wafer is concentrated at the radial edge position of the substrate 201; the above-mentioned scheme of the present application is achieved by The first outlet 10a of the switch valve 100 is set to blow the etching gas downward toward the edge of the substrate 201. Figure 11(b) shows a 3D morphology schematic diagram of the substrate 201 after epitaxial growth and etching process using the switch valve 100 of the embodiment of the present application. It can be clearly seen that the flatness of the edge of the substrate 201 is improved, and the maximum value of the local flatness is reduced, thereby optimizing the overall flatness parameters, effectively improving the epitaxial process capability, facilitating meeting customers' higher specifications, improving product yield, and saving production costs; this is because the reaction rates of etching gases with the same flow rate in different temperature field areas are different.

[0047] According to the switch valve 100 for the epitaxial growth equipment 200 of the embodiment of the utility model, the central axis of the first outlet 10a is set to extend downward in an inclined manner in the direction of the airflow, so that the first outlet 10a is suitable for blowing etching gas to the edge portion of the substrate 201, so as to perform certain etching and cutting on the epitaxial layer of the edge portion of the substrate 201, improve the morphology of the edge portion, so as to achieve surface flattening of the epitaxial layer of the edge portion of the substrate 201, which is beneficial to improving the flatness level of the epitaxial layer formed on the substrate 201, thereby facilitating improving the product yield; moreover, impurities, dust, etc. remaining on the edge portion of the substrate 201 can also be blown out.

[0048] In FIG12(a), the surface of the wafer after epitaxial growth is divided into 324 local areas with a size of 26 mm×8 mm, and the local flatness SFQR value of each area is measured. The larger the SFQR value, the worse the flatness of the area. FIG12(b) is the local flatness of FIG12(a) after etching using the switch valve 100 of the present application. It can be clearly seen that the flatness uniformity of the epitaxial wafer in FIG12(a) is poor, especially the local flatness value along its native crystal direction is poor. In FIG12(b), the maximum flatness value of the new epitaxial wafer is significantly improved, especially along the native crystal direction. The center and edge fluctuations of the entire epitaxial plane are reduced to a certain extent, and the radial thickness Δ value from the edge thickness at the edge is significantly weakened, thereby improving the flatness yield of the edge area. Among them, local flatness SFQR refers to making a reference plane based on the thickness value of the local area, and calculating the difference L between the reference plane and the highest point and the lowest point. Currently, the calculation specifications of 12-inch wafers usually use 26x8mm / 26x33mm / 25x25mm as three types of local areas. The 12-inch wafer is divided into 324 local areas, and each local area corresponds to a local flatness value (SFQR). The maximum SFQR value is then selected to evaluate the flatness level of the entire epitaxial wafer.

[0049] The reaction gas includes H2 (of course, the reaction gas may also include TCS, B2H6, etc.), and the etching gas includes hydrogen chloride. The surface of the epitaxial wafer is etched as described above to obtain a new epitaxial wafer, and the principle of the etching reaction is shown in the following table;

[0050]

[0051]

[0052]

[0053] It should be noted that the above reaction equations are all reversible. When hydrogen chloride gas is introduced into the epitaxial growth device 200, the concentration of hydrogen chloride in the epitaxial growth device 200 increases, increasing the forward reaction of the reaction equation, thereby etching the single crystal silicon at the edge of the original epitaxial wafer, which will cause the edge morphology of the entire epitaxial layer to change from an upwardly warped morphology to a morphological feature in which some positions are slightly warped and some positions are not warped. In the epitaxial growth device 200, the two microscopic mass transfer processes of epitaxial growth and etching process compete with each other. In the present application, the switch valve 100 specifically blows the etching gas to the edge of the wafer to achieve a reasonable distribution of the etching gas, thereby producing a good etching effect on the generated epitaxial layer.

[0054] In some embodiments, Figure 1-Figure 3 and Figure 8As shown, there are multiple first outlets 10a, and the multiple first outlets 10a are arranged in the vertical direction and / or the second horizontal direction (for example Figure 8 In the first mode, the connecting port 20 is opposite to at least one first outlet 10a, that is, the first inlet is connected to at least one first outlet 10a through the flow channel 10; the switch valve 100 has multiple first connecting states in the first mode, and in different first connecting states, the position and / or number of the first outlets 10a connected to the first inlet are different, and the second horizontal direction is perpendicular to the first horizontal direction. It can be seen that in different first connecting states, the position and / or number of the first outlets 10a connected to the first inlet are different, so that under the premise of blowing the etching gas from the first outlet 10a toward the edge of the substrate 201, the position and / or size of the blowing area of ​​the etching gas blown from the first outlet 10a of the switch valve 100 can be adjusted within a certain range, which is conducive to making the switch valve 100 applicable to the etching flattening of the edge of the substrate 201 under different epitaxial growth conditions.

[0055] Exemplarily, taking the case that there are two first outlets 10a, the switch valve 100 has at least two of the following multiple first connected states: in one first connected state (hereinafter referred to as state a), the first inlet is connected to the first first outlet 10a, and the first inlet is isolated from the second first outlet 10a; in another first connected state (hereinafter referred to as state b), the first inlet is connected to the second first outlet 10a, and the first inlet is isolated from the first first outlet 10a; in another first connected state (hereinafter referred to as state c), the first first outlet 10a and the second first outlet 10a are both connected to the first inlet. It can be seen that the positions of the blowing areas corresponding to state a and state b are different, and the size of the blowing area corresponding to state c is different from that of each of the other states (state a, state b). Further, if the above-mentioned first first outlet 10a is arranged above the above-mentioned second first outlet 10a, it is convenient to make the blowing area corresponding to state a be located radially inside the blowing area corresponding to state b, that is, the blowing area corresponding to state a is closer to the center of the substrate 201 than the blowing area corresponding to state b; if the above-mentioned first first outlet 10a and the above-mentioned second first outlet 10a are arranged along the second horizontal direction, it is convenient to arrange the blowing area corresponding to state a and the blowing area corresponding to state b along the second horizontal direction.

[0056] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, indicating that there may be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0057] In some embodiments, Figure 1-Figure 3 and Figure 8 As shown, a plurality of first outlets 10a arranged at intervals along the second horizontal direction constitute a first outlet group 10b, the first outlet group 10b is a plurality of groups and the plurality of first outlet groups 10b are arranged at intervals along the vertical direction, and the switch valve 100 is configured as follows: in the first mode, at least one first outlet group 10b is opposite to the corresponding communication port 20; at this time, if the number of first outlets 10a of the plurality of first outlet groups 10b is equal, then in different first communication states, the positions of the first outlets 10a connected to the first inlet are different, and of course, the number of first outlets 10a of the plurality of first outlet groups 10b can also be different, so as to realize that in different first communication states, the positions and numbers of the first outlets 10a connected to the first inlet are different. Therefore, under the premise that the switch valve 100 is applicable to substrates 201 with different epitaxial growth conditions, it is convenient to improve the blowing range of the switch valve 100 in the second horizontal direction in the first communication state, which is conducive to appropriately improving the etching efficiency.

[0058] In some embodiments, Figure 1 As shown, at least two of the plurality of first outlets 10a are arranged at intervals in the up-down direction, and in two first outlets 10a adjacent in the up-down direction, the angle α1 between the central axis of the lower first outlet 10a and the horizontal plane is greater than the angle α2 between the central axis of the upper first outlet 10a and the horizontal plane, so that in the first connected state, when the number of the up-down adjacent first outlets 10a connected to the first inlet is determined, it is beneficial to appropriately improve the blowing range of the switch valve 100 in the first horizontal direction, and to appropriately improve the etching efficiency; and / or, as Figure 8 As shown, at least two of the multiple first outlets 10a are arranged at intervals along the second horizontal direction, and in two adjacent first outlets 10a in the second horizontal direction, the angle between the central axis of the outer first outlet 10a and the preset vertical plane R1 is greater than the angle between the central axis of the inner first outlet 10a and the preset vertical plane R1, the preset vertical plane R1 passes through the center O of the valve body 1 and is parallel to the first horizontal direction, wherein the vertical distance between the outer first outlet 10a and the preset vertical plane R1 is greater than the vertical distance between the inner first outlet 10a and the preset vertical plane R1, so that in the first connected state, when the number of adjacent first outlets 10a connected to the first inlet along the second horizontal direction is determined, it is beneficial to appropriately improve the blowing range of the switch valve 100 in the second horizontal direction, and is also beneficial to appropriately improve the etching efficiency.

[0059] Exemplarily, the valve body 1 is formed as a spherical shell, the center of the valve body 1 is the center of the spherical shell, and the first outlet 10a is formed at the lower part of the valve body 1. If the central axis of each first outlet 10a extends along the normal direction of the corresponding position of the valve body 1, the central axis of each first outlet 10a passes through the center of the sphere. At this time, it is easy to meet the change in the inclination degree of the central axis of the first outlet 10a at different positions in the above scheme, which is conducive to simplifying the design and reducing processing costs.

[0060] Further, in Figure 1-Figure 3 and Figure 8 In the example, two groups of first outlet groups 10b are formed on the spherical shell, and each group of first outlet groups 10b includes three first outlets 10a arranged at intervals along the second horizontal direction. Taking the second horizontal direction as the front-to-back direction as an example, in a single group of first outlet groups 10b, the central axis of the middle first outlet 10a is located on the preset vertical plane R1, that is, the angle between the central axis of the middle first outlet 10a and the preset vertical plane R1 is 0°, the central axis of the front first outlet 10a extends obliquely forward and in a direction away from the preset vertical plane R1, and the central axis of the rear first outlet 10a extends obliquely backward and in a direction away from the preset vertical plane R1, so that γ1 and γ2 are both greater than 0°. Optionally, if the first outlet 10a corresponding to γ1 is the front first outlet 10a, and the front-to-back distance between the front first outlet 10a and the preset vertical plane R1 is greater than the front-to-back distance between the rear first outlet 10a and the preset vertical plane R1, then γ1>γ2; of course, if the front-to-back distance between the front first outlet 10a and the preset vertical plane R1 is equal to the front-to-back distance between the rear first outlet 10a and the preset vertical plane R1, then γ1=γ2.

[0061] Of course, in other embodiments of the present application, the central axes of all the first outlets 10a are arranged in parallel.

[0062] In some embodiments, in two first outlets 10a adjacent to each other in the vertical direction, the angle between the central axis of the lower first outlet 10a and the horizontal plane is greater than the angle between the central axis of the upper first outlet 10a and the horizontal plane, and the angle between the central axis of the lowermost first outlet 10a and the horizontal plane is less than or equal to 40°, then the angle between the central axis of all first outlets 10a and the horizontal plane is less than or equal to 40°.

[0063] Exemplarily, the valve body 1 is formed as a spherical shell, the first outlet 10a is formed at the lower part of the valve body 1 and is located on the side of the valve body 1 facing the supporting structure 102 in the first horizontal direction, and the central axis of the first outlet 10a is located between a horizontal plane passing through the center of the sphere and a preset straight line, which passes through the center of the sphere and has an angle of 40° with the horizontal plane.

[0064] For example, Figure 1 and Figure 8 As shown, Figure 1 Shown in Figure 8 There are two first outlets 10a in the middle row, the central axis of the lower first outlet 10a and the horizontal plane have an angle of 30°≤α1≤35°, and the central axis of the upper first outlet 10a and the horizontal plane have an angle of 13°≤α2≤18°; for the four outermost first outlets 10a in the second horizontal direction ( Figure 8 The angle between the central axis of the first outlet 10a at the lower side and the horizontal plane is 25°≤α1≤30°, and the angle between the central axis of the first outlet 10a at the upper side and the horizontal plane is 10°≤α2≤15°.

[0065] In some embodiments, Figure 1-Figure 3 and Figure 8 As shown, there are multiple connecting ports 20 and the multiple connecting ports 20 include a first connecting port 20a and a second connecting port 20b. The opening area of ​​the first connecting port 20a is smaller than the opening area of ​​the second connecting port 20b, so that the number of first outlets 10a that can be opposite to the first connecting port 20a is smaller than the number of first outlets 10a that can be opposite to the second connecting port 20b. Then, for the first connecting state achieved by the first connecting port 20a and the first connecting state achieved by the second connecting port 20b, the numbers of first outlets 10a that can blow etching gas in the two states may be different, and the blowing amounts of etching gas in the two states are different, which is convenient for realizing adaptive regulation of the blowing amount of etching gas.

[0066] In the embodiment of the present application, the number, opening area, and opening shape of the first outlets 10a can be set according to actual needs. For example, the first outlet 10a is a circular hole, and the diameter of the first outlet 10a is 0.2 mm to 1.5 mm.

[0067] In some embodiments, Figure 4-Figure 6 and Fig. 9 As shown, a second outlet 10c connected to the flow channel 10 is also formed on the valve body 1, and the second outlet 10c is arranged above the first outlet 10a. In the direction of the gas flow at the second outlet 10c, the central axis of the second outlet 10c extends upwardly and obliquely, so that the second outlet 10c is suitable for blowing etching gas to the inner top of the epitaxial growth equipment 200; in the first mode, the first valve core 2 closes the second outlet 10c to isolate the second outlet 10c from the first inlet, and in the second mode, the connecting port 20 is opposite to the second outlet 10c so that the second outlet 10c is connected to the first inlet through the flow channel 10.

[0068] It can be seen that the central axis of the second outlet 10c is inclined relative to the horizontal plane, so that the central axis of the second outlet 10c forms a non-zero angle β with the horizontal plane (for example Figure 1The β1 and β2 shown in the figure are both non-zero angles), and the second outlet 10c is suitable for blowing out the etching gas obliquely upward toward the inner top of the epitaxial growth device 200 to purge and etch the inner top of the epitaxial growth device 200; when the substrate 201 is single crystal silicon, in the epitaxial growth process, the inner top of the epitaxial growth device 200 will generate polycrystalline silicon through chemical reaction as the number and time accumulate, which will affect the measurement accuracy of the high-temperature thermometer inside the epitaxial growth device 200, resulting in the internal temperature control of the epitaxial growth device 200 not being in line with expectations, thereby reducing the flatness yield of the substrate 201 after epitaxy. For this reason, the present application By setting the second outlet 10c, the second outlet 10c blows etching gas toward the inner top of the epitaxial growth device 200 to achieve etching and cleaning of the inner top of the epitaxial growth device 200, reduce the impurity coating accumulated on the inner top of the epitaxial growth device 200, reduce the interference of impurities on the temperature measurement accuracy, and can reduce the number of PM (preventive maintenance) times for disassembly and cleaning of the top of the epitaxial growth device 200, thereby increasing the service life of the epitaxial growth device 200 and reducing production costs, so as to improve the temperature control accuracy of subsequent epitaxial growth processes, more accurately control the epitaxial growth rate, and facilitate the realization of multiple continuous epitaxial growth.

[0069] Obviously, in the first mode, the etching gas can be blown out from the first outlet 10a but cannot be blown out from the second outlet 10c, and in the second mode, the etching gas can be blown out from the second outlet 10c but cannot be blown out from the first outlet 10a. Thus, the switch valve 100 can achieve flattening of the epitaxial layer at the edge of the substrate 201 by switching to the first mode, and can achieve cleaning of the top of the epitaxial growth device 200 by switching to the second mode, for example, regular cleaning.

[0070] In some embodiments, Figure 4-Figure 6 and Figure 8 As shown, there are multiple second outlets 10c, and the multiple second outlets 10c are arranged at intervals along the up-down direction and / or the second horizontal direction. In the second mode, the connecting port 20 is opposite to at least one second outlet 10c, that is, the first inlet is connected to at least one second outlet 10c through the flow channel 10; the switch valve 100 has multiple second connection states in the second mode. In different second connection states, the position and / or number of the second outlets 10c connected to the first inlet are different, and the second horizontal direction is perpendicular to the first horizontal direction. It can be seen that in different second connection states, the position and / or number of the second outlets 10c connected to the first inlet are different, so that the position and / or size of the blowing area of ​​the etching gas blown from the second outlet 10c of the switch valve 100 can be adjusted within a certain range under the premise that the second outlet 10c blows the etching gas toward the top of the epitaxial growth device 200, so as to improve the cleaning efficiency of the top of the epitaxial growth device 200.

[0071] Exemplarily, taking the case that there are two second outlets 10c, the switch valve 100 has at least two of the following multiple second connection states: in one second connection state (hereinafter referred to as state d), the first inlet is connected to the first second outlet 10c, and the first inlet is isolated from the second second outlet 10c; in another second connection state (hereinafter referred to as state e), the first inlet is connected to the second second outlet 10c, and the first inlet is isolated from the first second outlet 10c; in another second connection state (hereinafter referred to as state f), the first second outlet 10c and the second second outlet 10c are both connected to the first inlet. It can be seen that the positions of the blowing areas corresponding to state d and state e are different, and the sizes of the blowing areas corresponding to state f and each of the other states (state d, state e) are different. Furthermore, if the above-mentioned first second outlet 10c is spaced above the above-mentioned second second outlet 10c, it is convenient to make the blowing area corresponding to state d be located radially outside the blowing area corresponding to state e; if the above-mentioned first second outlet 10c and the above-mentioned second second outlet 10c are spaced along the second horizontal direction, it is convenient to make the blowing area corresponding to state d and the blowing area corresponding to state e be arranged along the second horizontal direction.

[0072] In some embodiments, Figure 4-Figure 6 and Figure 8 As shown, a plurality of second outlets 10c arranged at intervals along the second horizontal direction constitute a group of second outlet groups 10d, and the second outlet groups 10d are multiple groups and the multiple groups of second outlet groups 10d are arranged at intervals along the vertical direction. The switch valve 100 is configured as follows: in the second mode, at least one group of second outlet groups 10d is opposite to the corresponding communication port 20; at this time, if the number of second outlets 10c of the multiple groups of second outlet groups 10d is equal, then in different second communication states, the positions of the second outlets 10c connected to the first inlet are different. Of course, the number of second outlets 10c of the multiple groups of second outlet groups 10d can also be different, so as to realize that in different second communication states, the positions and numbers of the second outlets 10c connected to the first inlet are different. Therefore, it is convenient to make the switch valve 100 suitable for different epitaxial growth equipment 200, and it is conducive to appropriately improving the cleaning efficiency.

[0073] In some embodiments, Figure 1 As shown, at least two of the plurality of second outlets 10c are spaced apart in the up-down direction, and in two second outlets 10c adjacent to each other in the up-down direction, an angle β2 between the central axis of the upper second outlet 10c and the horizontal plane is greater than an angle β1 between the central axis of the lower second outlet 10c and the horizontal plane, so that in the second connected state, when the number of the up-down adjacent second outlets 10c connected to the first inlet is determined, it is beneficial to appropriately improve the blowing range of the switch valve 100 in the first horizontal direction, and to appropriately improve the cleaning efficiency; and / or, as Figure 8 As shown, at least two of the multiple second outlets 10c are arranged at intervals along the second horizontal direction, and in two adjacent first outlets 10a in the second horizontal direction, the angle between the central axis of the outer second outlet 10c and the preset vertical plane R1 is greater than the angle between the central axis of the inner second outlet 10c and the preset vertical plane R1, the preset vertical plane R1 passes through the center of the valve body 1 and is parallel to the first horizontal direction, wherein the vertical distance between the outer second outlet 10c and the preset vertical plane R1 is greater than the vertical distance between the inner second outlet 10c and the preset vertical plane R1, so that in the second connected state, when the number of adjacent second outlets 10c connected to the first inlet along the second horizontal direction is determined, it is beneficial to appropriately improve the blowing range of the switch valve 100 in the second horizontal direction, and is also beneficial to appropriately improve the cleaning efficiency.

[0074] For example, Figure 1 and Figure 8 As shown, Figure 1 Shown in Figure 8 There are two second outlets 10c in the middle row, the central axis of the lower second outlet 10c and the horizontal plane have an angle of 13°≤β1≤18°, and the central axis of the upper second outlet 10c and the horizontal plane have an angle of 30°≤β2≤35°; for the four outermost second outlets 10c in the second horizontal direction ( Figure 8 The included angle between the central axis of the lower second outlet 10c and the horizontal plane is 10°≤β1≤15°, and the included angle between the central axis of the upper second outlet 10c and the horizontal plane is in the range of 25°≤β2≤30°.

[0075] Exemplarily, the valve body 1 is formed as a spherical shell, the center of the valve body 1 is the center of the spherical shell, and the second outlet 10c is formed at the upper part of the valve body 1. If the central axis of each second outlet 10c extends along the normal at the corresponding position of the valve body 1, the central axis of each second outlet 10c passes through the center of the sphere. At this time, it is easy to meet the change in the inclination degree of the central axis of the second outlet 10c at different positions in the above scheme, which is conducive to simplifying the design and reducing processing costs.

[0076] Further, in Figure 8In the example, two groups of second outlet groups 10d spaced apart in the upper and lower directions are formed on the spherical shell, and each group of second outlet groups 10d includes three second outlets 10c spaced apart in the second horizontal direction. Taking the second horizontal direction as the front-to-back direction as an example, in a single group of second outlet groups 10d, the central axis of the middle second outlet 10c is located on the preset vertical plane R1, that is, the angle between the central axis of the middle second outlet 10c and the preset vertical plane R1 is 0°, the central axis of the front second outlet 10c extends obliquely forward and in a direction away from the preset vertical plane R1, and the central axis of the rear second outlet 10c extends obliquely backward and in a direction away from the preset vertical plane R1, so that δ1 and δ2 are both greater than 0°. Optionally, if the second outlet 10c corresponding to δ1 is the front second outlet 10c, and the front-to-back distance between the front second outlet 10c and the preset vertical plane R1 is greater than the front-to-back distance between the rear second outlet 10c and the preset vertical plane R1, then δ1>δ2; of course, if the front-to-back distance between the front second outlet 10c and the preset vertical plane R1 is equal to the front-to-back distance between the rear second outlet 10c and the preset vertical plane R1, then δ1=δ2.

[0077] Of course, in other embodiments of the present application, the central axes of all the second outlets 10c are arranged in parallel.

[0078] In some embodiments, in two second outlets 10c adjacent to each other in the vertical direction, the angle between the central axis of the upper second outlet 10c and the horizontal plane is greater than the angle between the central axis of the lower second outlet 10c and the horizontal plane, and the angle between the central axis of the uppermost second outlet 10c and the horizontal plane is less than or equal to 40°, then the angle between the central axis of all second outlets 10c and the horizontal plane is less than or equal to 40°.

[0079] Exemplarily, the valve body 1 is formed as a spherical shell, the second outlet 10c is formed at the lower part of the valve body 1 and is located on the side of the valve body 1 facing the supporting structure 102 in the first horizontal direction, and the central axis of the second outlet 10c is located between a horizontal plane passing through the center of the sphere and a preset straight line, which passes through the center of the sphere and has an angle of 40° with the horizontal plane.

[0080] In some embodiments, Figure 4-Figure 6As shown, there are multiple connecting ports 20 and the multiple connecting ports 20 include a first connecting port 20a and a second connecting port 20b. The opening area of ​​the first connecting port 20a is smaller than the opening area of ​​the second connecting port 20b, so that the number of second outlets 10c that can be opposite to the first connecting port 20a is smaller than the number of second outlets 10c that can be opposite to the second connecting port 20b. Then, for the second connecting state achieved by the first connecting port 20a and the second connecting state achieved by the second connecting port 20b, the numbers of second outlets 10c that can blow etching gas in the two states may be different, and the blowing amounts of etching gas in the two states are different, which is convenient for realizing adaptive regulation of the blowing amount of etching gas.

[0081] In some embodiments, Figure 7 As shown, the switch valve 100 also has a third mode. In the third mode, the first valve core 2 closes the first outlet 10a and the second outlet 10c so that the first outlet 10a and the second outlet 10c are both isolated from the first inlet. At this time, the etching gas cannot be blown out from the first outlet 10a and the second outlet 10c, thereby improving the control ability of the switch valve 100 over the etching gas.

[0082] In some embodiments, Figure 1-Figure 6 As shown, there are multiple communication ports 20, and the multiple communication ports 20 include a first communication port 20a and a second communication port 20b. The switch valve 100 also includes a second valve core 3, which is arranged on the side of the first valve core 2 away from the valve body 1. For example, the second valve core 3 is arranged in the first valve core 2, and the second valve core 3 can move between a blocking position for closing the first communication port 20a and a evasion position for opening the first communication port 20a. Thus, when the first communication port 20a is opposite to the corresponding first outlet 10a, the second valve core 3 can move to the evasion position, so that the corresponding first outlet 10a is connected to the first inlet through the first communication port 20a and the flow channel 10. When the first communication port 20a is misaligned with all the first outlets 10c, if the second valve core 3 moves to the blocking position, it is beneficial to reduce the leakage of gas at the first communication port 20a and improve the sealing performance of the switch valve 100.

[0083] Similarly, when a second outlet 10c is also formed on the valve body 1, when the first connecting port 20a is opposite to the corresponding second outlet 10c, the second valve core 3 can move to the avoidance position to enable the corresponding second outlet 10c to be connected to the first inlet through the first connecting port 20a and the flow channel 10. When the first connecting port 20a is misaligned with all the second outlets 10c, if the second valve core 3 moves to the blocking position, it is beneficial to reduce the leakage of gas at the second connecting port 20a and improve the sealing of the switch valve 100.

[0084] For example, the valve body 1 is formed with a first outlet 10a and a second outlet 10c. In the first mode, the communication port 20 is opposite to the first outlet 10a so that the first outlet 10a is connected to the first inlet through the flow channel 10, and the first valve core 2 closes the second outlet 10c so that the second outlet 10c is isolated from the first inlet. In the second mode, the communication port 20 is opposite to the second outlet 10c so that the second outlet 10c is connected to the first inlet through the flow channel 10, and the first valve core 2 closes the first outlet 10a so that the first outlet 10a is isolated from the first inlet. At this time, in a first connected state of the first mode, as shown in FIG. Figure 3 As shown, the second communication port 20b is opposite to the corresponding first outlet 10a, and the first communication port 20a is misaligned with all the first outlets 10a, and the first communication port 20a is misaligned with all the second outlets 10c, and the second valve core 3 is in the blocking position; in another first communication state of the first mode, as Figure 1 and Figure 2 As shown, the first communication port 20a is opposite to the corresponding first outlet 10a, and the second communication port 20b is staggered with all the first outlets 10a, and the second communication port 20b is staggered with all the second outlets 10c, and the second valve core 2 is in the avoidance position; similarly, in a second communication state of the second mode, as Figure 6 As shown, the second communication port 20b is opposite to the corresponding second outlet 10c, and the first communication port 20a is misaligned with all the first outlets 10a, and the first communication port 20a is misaligned with all the second outlets 10c, and the second valve core 3 is in the blocking position; in another second communication state of the second mode, as shown Figure 4 and Figure 5 As shown, the first communication port 20a is opposite to the corresponding second outlet 10a, and the second communication port 20b is offset from all the first outlets 10a, and the second communication port 20b is offset from all the second outlets 10c, and the second valve core 2 is in the avoidance position.

[0085] It is understandable that there may be one or more first communicating ports 20a. When there are multiple first communicating ports 20a, in the blocking position, the second valve core 3 can close at least one first communicating port 20a, and in the avoidance position, the second valve core 3 opens all first communicating ports 20a.

[0086] In some embodiments, Figure 1-Figure 6As shown, there are two communication ports 20, namely, a first communication port 20a and a second communication port 20b. The opening area of ​​the first communication port 20a is smaller than the opening area of ​​the second communication port 20b, so that the number of first outlets 10a that the first communication port 20a can correspond to is smaller than the number of first outlets 10a that the second communication port 20b can correspond to; of course, if a second outlet 10c is formed on the valve body 1, the number of second outlets 10c that the first communication port 20a can correspond to is smaller than the number of second outlets 10c that the second communication port 20b can correspond to. In the shielding position, the second valve core 3 closes the first communication port 20a, and in the avoidance position, the second valve core 3 opens the first communication port 20a.

[0087] For example, the switch valve 100 is configured such that, in a first mode, at least one group of first outlet groups 10b is opposite to the corresponding connecting port 20, and the number of first outlet groups 10b that the first connecting port 20a can be opposite to is less than the number of first outlet groups 10b that the second connecting port 20b can be opposite to; and / or, the switch valve 100 is configured such that, in a second mode, at least one group of second outlet groups 10d is opposite to the corresponding connecting port 20, and the number of second outlet groups 10d that the first connecting port 20a can be opposite to is less than the number of second outlet groups 10d that the second connecting port 20b can be opposite to.

[0088] For example, Figure 1-Figure 6 and Figure 8 As shown, two groups of first outlet groups 10b spaced apart from each other in the upper and lower parts and two groups of second outlet groups 10d spaced apart from each other in the upper and lower parts are formed on the valve body 1, the two groups of first outlet groups 10b are spaced apart above the second outlet groups 10d, each group of first outlet groups 10b includes three first outlets 10a spaced apart from each other in the second horizontal direction, and each group of second outlet groups 10d includes three second outlets 10c spaced apart from each other in the second horizontal direction; the opening area of ​​the first connecting port 20a is smaller than the opening area of ​​the second connecting port 20b, so that the first connecting port 20a is suitable for being opposite to one group of first outlet groups 10b / one group of second outlet groups 10d, and the second connecting port 20b is suitable for being opposite to two groups of first outlet groups 10b / two groups of second outlet groups 10d.

[0089] Among them, in the first mode, at least one group of first outlet groups 10b is opposite to the corresponding communication port 20, and the first mode has three different first communication states: 1. The first communication port 20a is opposite to the lower first outlet group 10b, the upper first outlet group 10b and all second outlet groups 10d are misaligned with the second communication port 20b, and only the lower first outlet group 10b of the switch valve 100 blows the etching gas, and the second valve core 3 is in the avoidance position at this time; 2. The first communication port 20a is opposite to the upper first outlet group 10b , the lower first outlet group 10b and all the second outlet groups 10d are offset from the second connecting port 20b, and only the upper first outlet group 10b of the switch valve 100 blows the etching gas. At this time, the second valve core 3 is in the avoidance position; 3. The second connecting port 20b is opposite to the two groups of first outlet groups 10b, and all the second outlet groups 10d are offset from the first connecting port 20a and the second connecting port 20b respectively. The switch valve 100 blows the etching gas through the two groups of first outlet groups 10b. At this time, the second valve core 3 is in the blocking position.

[0090] In the second mode, at least one group of the second outlet groups 10d is opposite to the corresponding communication port 20, and the second mode has three different second communication states: 1. The first communication port 20a is opposite to the lower second outlet group 10d, the upper second outlet group 10d and all the first outlet groups 10b are misaligned with the second communication port 20b, and only the lower second outlet group 10d of the switch valve 100 blows the etching gas, and the second valve core 3 is in the avoidance position; 2. The first communication port 20a is opposite to the upper second outlet group 10d, The lower second outlet group 10d and all the first outlet groups 10b are offset from the second connecting port 20b, and only the upper second outlet group 10d of the switch valve 100 blows the etching gas. At this time, the second valve core 3 is in the avoidance position; 3. The second connecting port 20b is opposite to the two groups of second outlet groups 10d, and all the first outlet groups 10b are offset from the first connecting port 20a and the second connecting port 20b respectively. The switch valve 100 blows the etching gas through the two groups of second outlet groups 10d. At this time, the second valve core 3 is in the blocking position.

[0091] In some embodiments, Figure 1-Figure 6 As shown, the first valve core 2 and the second valve core 3 are rotatably arranged respectively, and the rotation axis of the first valve core 2 and the rotation axis of the second valve core 3 coincide and both extend along the second horizontal direction, and the second horizontal direction is perpendicular to the first horizontal direction, which is beneficial to simplify the structure of the switch valve 100 and facilitates implementation.

[0092] In which, the valve body 1 is formed as a spherical shell, the first outlet 10a is formed at the lower part of the valve body 1, the first valve core 2 and the second valve core 3 are spherical valve cores respectively, and the switch valve 100 can be configured as a V-type ball valve (such as an electromagnetic ball valve); or, the valve body 1 is formed as a cylindrical shell, the first outlet 10a is formed at the lower part of the peripheral wall of the valve body 1, the first valve core 2 and the second valve core 3 are cylindrical valve cores respectively, and the central axis of the valve body 1 can extend along the second horizontal direction.

[0093] Optionally, a hard seal is used between the valve body 1 and the first valve core 2 in the switch valve 100, and / or a hard seal is used between the first valve core 2 and the second valve core 2, which is conducive to using the switch valve 100 to guide media such as high temperature conditions and tiny solid particles that are resistant to acid corrosion.

[0094] According to the epitaxial growth device 200 of the second embodiment of the utility model, Fig. 9 As shown, it includes a shell 101, a supporting structure 102 and a switch valve 100 for an epitaxial growth device 200 according to the first aspect of the utility model. An epitaxial chamber 101a is defined in the shell 101. The supporting structure 102 is rotatably disposed in the epitaxial chamber 101a and is used to support the substrate 201. The switch valve 100 is disposed on the peripheral wall of the shell 101. The first inlet is suitable for introducing an etching gas for preventing the deposition of an epitaxial layer on the substrate 201. The first outlet 10a is located above the supporting structure 102 and is offset from the supporting structure 102 in a first horizontal direction. The epitaxial chamber 101a also has a second inlet, which is suitable for introducing a reaction gas for forming an epitaxial layer on the substrate 201 into the epitaxial chamber 101a.

[0095] According to the epitaxial growth device 200 of the embodiment of the present invention, by adopting the above-mentioned switch valve 100, it is beneficial to improve the product yield.

[0096] For example, on a horizontal plane, the etching gas is blown toward the substrate approximately along a first horizontal direction, and the reaction gas is blown approximately along a second horizontal direction; the top wall of the epitaxial cavity 101a is formed into a spherical surface, generally referred to as a Dome (i.e., the dome of the epitaxial cavity). In the epitaxial growth process, the top wall of the epitaxial cavity 101a is

[0097] Other structures and operations of the epitaxial growth device 200 according to the embodiment of the present invention are known to those skilled in the art and will not be described in detail here.

[0098] In addition, it should be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, the present application will not further explain various possible combinations. In addition, the various different embodiments of the present application can also be combined arbitrarily, as long as they do not violate the idea of ​​the present application, they should also be regarded as the contents disclosed in the present application.

[0099] In the description of the present utility model, it is necessary to understand that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present utility model and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present utility model. In addition, features defined as "first" and "second" may explicitly or implicitly include one or more of such features. In the description of the present utility model, unless otherwise specified, "multiple" means two or more.

[0100] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installation", "connection" and "connection" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0101] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0102] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A switch valve for epitaxial growth equipment, characterized in that: The epitaxial growth device further includes a bearing structure, the bearing structure is used to bear the substrate and drive the substrate to rotate, and the switch valve includes: a valve body, wherein a flow channel is formed in the valve body, and a first inlet and a first outlet are formed on the valve body and communicate with the flow channel, wherein the first inlet is suitable for introducing an etching gas for preventing deposition of an epitaxial layer on the substrate, and the first outlet is suitable for being arranged above the supporting structure and being arranged offset with the supporting structure in a first horizontal direction, and in the gas flow direction at the first outlet, a central axis of the first outlet extends downwardly and obliquely, so that the first outlet is suitable for blowing the etching gas toward the edge portion of the substrate; A first valve core, the first valve core is movably disposed in the flow channel, at least one communication port is formed on the first valve core, the switch valve has a first mode and a second mode, in the first mode, the communication port is opposite to the first outlet so that the first outlet is connected to the first inlet through the flow channel, in the second mode, the first valve core closes the first outlet so that the first outlet is separated from the first inlet.

2. The switch valve for epitaxial growth equipment according to claim 1, characterized in that: There are multiple first outlets, and the multiple first outlets are arranged at intervals along the up and down direction and / or the second horizontal direction. In the first mode, the connecting port is opposite to at least one of the first outlets. The switch valve has multiple first connecting states in the first mode. In different first connecting states, the position and / or number of the first outlet connected to the first inlet are different, and the second horizontal direction is perpendicular to the first horizontal direction.

3. The switch valve for epitaxial growth equipment according to claim 2, characterized in that: At least two of the plurality of first outlets are arranged at intervals in the up-down direction, and in two adjacent first outlets in the up-down direction, the angle between the central axis of the first outlet on the lower side and the horizontal plane is greater than the angle between the central axis of the first outlet on the upper side and the horizontal plane; and / or, At least two of the multiple first outlets are arranged at intervals along the second horizontal direction. In two adjacent first outlets in the second horizontal direction, the angle between the center axis of the outer first outlet and a preset vertical plane is greater than the angle between the center axis of the inner first outlet and the preset vertical plane. The preset vertical plane passes through the center of the valve body and is parallel to the first horizontal direction.

4. The switch valve for epitaxial growth equipment according to claim 2, characterized in that: The communicating ports are multiple and include a first communicating port and a second communicating port, wherein an opening area of ​​the first communicating port is smaller than an opening area of ​​the second communicating port, so that the number of the first outlets corresponding to the first communicating port is smaller than the number of the first outlets corresponding to the second communicating port.

5. The switch valve for epitaxial growth equipment according to claim 1, characterized in that: A second outlet connected to the flow channel is also formed on the valve body. The second outlet is arranged above the first outlet. In the direction of the gas flow at the second outlet, the central axis of the second outlet extends upwardly and obliquely so that the second outlet is suitable for blowing etching gas toward the inner top of the epitaxial growth device. In the first mode, the first valve core closes the second outlet to isolate the second outlet from the first inlet. In the second mode, the connecting port is opposite to the second outlet so that the second outlet is connected to the first inlet through the flow channel.

6. The switch valve for epitaxial growth equipment according to claim 5, characterized in that: There are multiple second outlets, and the multiple second outlets are arranged at intervals along the up and down direction and / or the second horizontal direction. In the second mode, the connecting port is opposite to at least one of the second outlets. The switch valve has multiple second connecting states in the second mode. In different second connecting states, the position and / or number of the second outlets connected to the first inlet are different, and the second horizontal direction is perpendicular to the first horizontal direction.

7. The switch valve for epitaxial growth equipment according to claim 6, characterized in that: At least two of the plurality of second outlets are arranged at intervals in the up-down direction, and in two adjacent second outlets in the up-down direction, the angle between the central axis of the upper second outlet and the horizontal plane is greater than the angle between the central axis of the lower second outlet and the horizontal plane; and / or, At least two of the multiple second outlets are arranged at intervals along the second horizontal direction. In two adjacent second outlets in the second horizontal direction, the angle between the center axis of the outer second outlet and a preset vertical plane is greater than the angle between the center axis of the inner second outlet and the preset vertical plane. The preset vertical plane passes through the center of the valve body and is parallel to the first horizontal direction.

8. The switch valve for epitaxial growth equipment according to claim 6, characterized in that: The communicating ports are multiple and include a first communicating port and a second communicating port, wherein an opening area of ​​the first communicating port is smaller than an opening area of ​​the second communicating port, so that the number of the second outlets corresponding to the first communicating port is smaller than the number of the second outlets corresponding to the second communicating port.

9. The switch valve for epitaxial growth equipment according to claim 5, characterized in that: The switch valve further has a third mode. In the third mode, the first valve core closes the first outlet and the second outlet so that the first outlet and the second outlet are both isolated from the first inlet.

10. The switch valve for epitaxial growth equipment according to any one of claims 1 to 9, characterized in that: The communication ports are multiple and include a first communication port and a second communication port, and the switch valve further includes: The second valve core is arranged on a side of the first valve core away from the valve body and can move between a blocking position for closing the first communication port and a avoiding position for opening the first communication port.

11. An epitaxial growth device, characterized in that: The device comprises a shell, a supporting structure and a switch valve for epitaxial growth equipment according to any one of claims 1 to 10, wherein an epitaxial chamber is defined in the shell, the supporting structure is rotatably disposed in the epitaxial chamber and is used to support a substrate, the switch valve is disposed on the peripheral wall of the shell, the first inlet is suitable for introducing an etching gas for preventing the deposition of an epitaxial layer on the substrate, the first outlet is located above the supporting structure and is offset from the supporting structure in the first horizontal direction, the epitaxial chamber also has a second inlet, and the second inlet is suitable for introducing a reaction gas for forming an epitaxial layer on the substrate into the epitaxial chamber.

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