Air exhaust ring assembly and semiconductor reaction cavity
By designing a pumping ring assembly containing a pumping ring and a limiting ring in the semiconductor reaction chamber, the problems of uneven air flow and plasma instability during semiconductor manufacturing are solved, and more uniform air flow distribution and more stable plasma are achieved. Body control improves the deposition quality.
Patent Information
- Application Number
- CN202323534525.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2023-12-22
- Publication Date
- 2025-02-18
- Estimated Expiration
- 2033-12-22
AI Technical Summary
During semiconductor manufacturing, deposition quality problems occur due to uneven air flow and unstable plasma, especially in locations that are not easy to clean or design dead zones.
A pumping ring assembly is designed, including a pumping ring arranged on the side of the chamber and a restriction ring. The restriction ring is located directly opposite the pumping hole in the pumping ring, and is used to block the air flow into the pumping hole, thereby improving the Air flow uniformity.
Through this design, the uniformity of the air flow and plasma control are significantly improved, the instability of the wafer edge plasma is reduced, and the uniformity and efficiency of the deposition process are improved.
Smart Images
Figure CN222499355U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of semiconductor manufacturing equipment, and more specifically to an air pumping ring component and a semiconductor reaction chamber. Background Art
[0002] Thin film deposition technology is widely used in the manufacture of thin films for microelectronic devices by forming deposits on a substrate. Common thin film deposition techniques include physical vapor deposition, chemical vapor deposition (CVD) and other techniques.
[0003] In the semiconductor process, plasma is introduced into the reaction chamber to react and deposit on the surface of the wafer to form a thin film. After the reaction is completed, an inert gas enters the chamber for purge to remove excess plasma and byproducts generated by the reaction. Subsequently, the exhaust system will exhaust the purge gas and other gases.
[0004] In the prior art, for most semiconductor deposition equipment, the exhaust system adopts a chamber side exhaust structure design. This design works effectively in most cases, but there may be problems with the distribution of purge gas in some difficult-to-clean locations or design dead zones.
[0005] In some difficult-to-clean locations or designed dead zones, additional purge gas is used for purging. Usually, these purge gases enter from the bottom of the chamber and the side of the shower plate. However, due to the introduction of two purge gases, the single-station or multi-station chamber may have a problem of eccentric airflow in the exhaust system during the deposition process, making it difficult to control the uniformity of the purge flow.
[0006] Figure 1 The schematic diagram of the working principle of the air pumping ring in the prior art is disclosed, such as Figure 1 As shown, the exhaust system at least includes an exhaust ring 10, and the purge gas enters from the bottom of the chamber and the side of the shower plate, and is discharged from the exhaust holes 11 of the exhaust ring 10. Due to the effect of the purge gas, the airflow of the exhaust system is not concentric, resulting in uneven distribution of the plasma 40 on the exhaust ring 10.
[0007] In addition, the edge area between the shower plate and the heating plate also showed uneven and unstable plasma, resulting in abnormal edge of wafer deposition. Utility Model Content
[0008] The utility model aims to provide an exhaust ring assembly and a semiconductor reaction chamber, which solve the problem of deposition quality caused by uneven airflow and unstable plasma in the semiconductor manufacturing process.
[0009] In order to achieve the above-mentioned purpose, the utility model provides a pumping ring assembly, which is arranged in a semiconductor reaction chamber and includes at least one pumping ring and one confinement ring:
[0010] The exhaust ring is arranged at the side of the chamber and is used to exhaust the gas in the chamber;
[0011] The side of the air pumping ring is provided with a plurality of air pumping holes;
[0012] The limiting ring is arranged inside the air pumping ring on one side facing the air pumping hole to block and limit the air flow into the air pumping hole.
[0013] In some embodiments, the pumping ring is provided with a step structure on one side close to the chamber:
[0014] The step structure is provided with a plurality of air extraction holes on the side of the platform.
[0015] In some embodiments, the bottom surface of the restriction ring is connected and in contact with the platform of the step structure to obtain support.
[0016] In some embodiments, the upper surface of the confinement ring is higher than the upper surface of the exhaust hole.
[0017] In some embodiments, the air flow flows in from the dead zone of the shower plate, is blocked by the limiting ring, and then flows out through the air extraction hole.
[0018] In some embodiments, the air flow flows in from the bottom of the heating plate, is blocked by the limiting ring, and then flows out through the exhaust hole.
[0019] In some embodiments, the upper surface of the confinement ring is 1 mm to 2 mm higher than the upper surface of the exhaust hole.
[0020] In some embodiments, the confinement ring is a circular ring structure, and the corresponding diameter is matched according to different process requirements.
[0021] In order to achieve the above-mentioned object, the utility model provides a semiconductor reaction chamber, which at least comprises a pumping ring assembly as described in any one of the above-mentioned items.
[0022] The utility model provides an exhaust ring assembly and a semiconductor reaction chamber. The exhaust ring assembly is arranged in the semiconductor reaction chamber and comprises at least one exhaust ring and a limiting ring. The exhaust ring is arranged on the side of the chamber and has a plurality of exhaust holes on the side for extracting the gas in the chamber. The limiting ring is arranged in the exhaust ring on the side facing the exhaust holes to block and limit the airflow flowing into the exhaust holes, thereby improving the uniformity of the airflow, optimizing the plasma control and having strong adaptability. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] The above and other features, properties and advantages of the present invention will become more apparent through the following description in conjunction with the accompanying drawings and embodiments, in which the same reference numerals always represent the same features, wherein:
[0024] Figure 1 The schematic diagram of the working principle of the air pumping ring in the prior art is disclosed;
[0025] Figure 2 A schematic diagram of the working principle of an air pumping ring assembly according to an embodiment of the utility model is disclosed;
[0026] Figure 3 A schematic structural diagram of a restriction ring according to an embodiment of the utility model is disclosed.
[0027] The meanings of the reference numerals in the figures are as follows:
[0028] 10. Pumping ring;
[0029] 11. Air extraction hole;
[0030] 20: air pumping ring;
[0031] 21 air extraction hole;
[0032] 30 limiting ring;
[0033] 40 plasma. DETAILED DESCRIPTION
[0034] In order to make the purpose, technical solution and advantages of the utility model more clear, the utility model is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the utility model and are not used to limit the utility model.
[0035] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention. Although the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation, the shape, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the component layout may also be more complicated.
[0036] Figure 2 The schematic diagram of the working principle of the air pumping ring assembly according to one embodiment of the utility model is disclosed. Figure 2 As shown, the utility model proposes a pumping ring assembly, which is arranged in a semiconductor reaction chamber and includes at least one pumping ring and one confinement ring:
[0037] The pumping ring 20 is arranged at the side of the chamber and is used to pump out the gas in the chamber;
[0038] The exhaust ring 20 has a plurality of exhaust holes 21 on its side;
[0039] The limiting ring 30 is arranged inside the air pumping ring on one side facing the air pumping hole to block and limit the air flow into the air pumping hole.
[0040] In one embodiment, a pumping ring assembly includes a pumping ring and a restriction ring. The pumping ring is located at the side of the chamber and is provided with a plurality of pumping holes, which can effectively extract the gas in the chamber. The restriction ring is located in the pumping ring, facing the side of the pumping hole, and is used to block the airflow flowing into the pumping hole, so as to better control the airflow. In a standard semiconductor manufacturing chamber, the pumping ring assembly can provide better airflow control, reduce the non-uniform distribution of gas, and ensure the stability and reliability of the manufacturing process.
[0041] The vacuum ring assembly proposed in the utility model adds a limiting ring structure at the measuring and pumping position. On the one hand, the plasma generation area is limited to between the spray plate and the heating plate area, weakening the instability of the plasma at the edge of the wafer. On the other hand, it is equivalent to adding an extra vacuum ring channel to the side vacuum structure. After multiple actions of flow resistance, the airflow distribution in the edge area of the wafer is more symmetrical and uniform.
[0042] like Figure 2 As shown, the pumping ring is provided with a step structure on one side close to the chamber:
[0043] The step structure is provided with a plurality of air extraction holes on the side of the platform.
[0044] The bottom surface of the limiting ring is connected and in contact with the platform of the step structure to obtain support.
[0045] Furthermore, the upper surface of the limiting ring is higher than the upper surface of the air extraction hole.
[0046] In this embodiment, the bottom surface of the confinement ring is connected and in contact with the platform of the step structure to obtain a stable support, thereby ensuring the stability of the confinement ring in the cavity and effectively preventing vibration or displacement that may occur during the semiconductor manufacturing process.
[0047] In this embodiment, the height of the restriction ring matches the pumping ring, the bottom surface of the ceramic ring falls on the platform of the pumping ring, and the upper surface is slightly higher than the upper surface of the pumping hole by 1-2 mm. This precise height difference provides more detailed adjustment for airflow control and helps to improve the guidance and distribution of airflow.
[0048] A step structure is provided on the inner side of the chamber of the pumping ring, and a pumping hole is provided on the side of the platform. This pumping hole structure provides additional air flow control and helps to distribute the gas more evenly, especially in the side area of the chamber.
[0049] Figure 3 The structure diagram of the restriction ring according to an embodiment of the utility model is disclosed. Figure 3 As shown, the limiting ring 30 is a circular ring structure, and the corresponding diameter is matched according to different process requirements.
[0050] The limiting ring 30 is a ceramic ring, and the diameter can be adjusted according to process requirements.
[0051] In this embodiment, a ceramic ring hardware is added to achieve the blocking and weakening effects. According to different process requirements, ring-shaped limiting rings with different diameters can be designed. This design is simple and easy to install without the need for special tools or fixtures.
[0052] like Figure 2 As shown, the gas flow paths of the pumping ring assembly in the semiconductor reaction chamber are divided into the following two types:
[0053] The airflow flows in from the dead zone of the spray plate, is blocked by the restriction ring, and then flows out through the air extraction hole.
[0054] The airflow flows in from the bottom of the heating plate, is blocked by the limiting ring, and then flows out through the air extraction hole.
[0055] In one embodiment, the air pumping ring assembly is designed to allow air flow to flow in from the dead zone of the shower plate. The restriction ring is located inside the air pumping ring, facing the air pumping hole, to block and guide the air flow.
[0056] In this embodiment, the dead zones around the shower plate in semiconductor manufacturing, i.e., those areas that are usually difficult to reach, are effectively managed by the confinement ring through precise control of the inlet and outlet of the gas flow, thereby reducing gas retention and uneven deposition in the dead zones and improving the uniformity and efficiency of the deposition process.
[0057] In another embodiment, the pumping ring assembly is also suitable for controlling the airflow from the bottom of the heating plate. The position and structure of the restriction ring are also suitable for this airflow path to block and optimize the airflow.
[0058] The design of the airflow in the bottom area of the heating plate provides improved control. Airflow control in this area is critical to maintaining uniform temperature and gas distribution around the heating plate. By blocking and redirecting the airflow, the confinement ring helps reduce hot spots and airflow non-uniformities during the heating process, thereby improving the uniformity and quality of wafer deposition.
[0059] The utility model also proposes a semiconductor reaction chamber, comprising the above-mentioned pumping ring assembly. It is used in a semiconductor reaction chamber to improve the distribution of plasma and the uniformity of gas flow. The pumping ring assembly includes at least one pumping ring and one restriction ring. The pumping ring is arranged on the side of the chamber, and a plurality of pumping holes are opened on the side to extract the gas in the chamber. The restriction ring is arranged in the pumping ring, facing the side of the pumping hole, to block and restrict the gas flow into the pumping hole. In addition, the pumping ring is provided with a step structure on one side close to the chamber, and a plurality of pumping holes are provided on the side of the platform, and the bottom surface of the restriction ring is connected and contacted with the platform of the step structure to obtain support.
[0060] In this embodiment, more effective airflow control reduces the number of necessary maintenance and cleaning times, and improves the efficiency of the entire production process. Through the careful design and implementation of the pumping ring assembly, the airflow control effect in the semiconductor manufacturing process can be significantly improved, thereby improving the overall performance and efficiency of wafer manufacturing.
[0061] The utility model provides an exhaust ring assembly and a semiconductor reaction chamber, which specifically have the following beneficial effects:
[0062] 1) Effectively limit the scope of plasma action, ensure that the plasma at the edge of the wafer is stable and uniform, and weaken the impact of its edge effect;
[0063] 2) Through multi-layer flow resistance design, the uniformity of airflow at the edge of the wafer can be effectively controlled;
[0064] 3) The structure is simple and effective, and the confinement rings of different sizes can be easily replaced according to process requirements to improve the process window.
[0065] In the description of the present invention, it should be noted that the terms "upper", "lower", "front", "back", "left", "right", "vertical", "inside", "outside", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction. Therefore, they cannot be understood as limitations on the present invention.
[0066] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.
[0067] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present utility model, unless otherwise specified, "plurality" means two or more, unless otherwise clearly specified.
[0068] Unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be an indirect connection through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in this utility model can be understood according to specific circumstances.
[0069] The above embodiments are provided for persons familiar with the art to implement or use the present invention. Personnel familiar with the art can make various modifications or changes to the above embodiments without departing from the utility model concept of the present invention. Therefore, the protection scope of the present invention is not limited to the above embodiments, but should be the maximum scope of the innovative features mentioned in the claims.
Claims
1. A pumping ring assembly, arranged in a semiconductor reaction chamber, characterized in that: Contains at least one pumping ring and one confinement ring: The exhaust ring is arranged at the side of the chamber and is used to exhaust the gas in the chamber; The side of the air pumping ring is provided with a plurality of air pumping holes; The limiting ring is arranged inside the air pumping ring on one side facing the air pumping hole to block and limit the air flow into the air pumping hole.
2. The pumping ring assembly according to claim 1, characterized in that: The pumping ring is provided with a step structure on one side close to the chamber: The step structure is provided with a plurality of air extraction holes on the side of the platform.
3. The air pumping ring assembly according to claim 2, characterized in that: The bottom surface of the limiting ring is connected and in contact with the platform of the step structure to obtain support.
4. The air pumping ring assembly according to claim 3, characterized in that: The upper surface of the limiting ring is higher than the upper surface of the air pumping hole.
5. The pumping ring assembly according to claim 1, characterized in that: The airflow flows in from the dead zone of the spray plate, is blocked by the limiting ring, and then flows out through the air extraction hole.
6. The pumping ring assembly according to claim 1, characterized in that: The airflow flows in from the bottom of the heating plate, is blocked by the limiting ring, and then flows out through the air extraction hole.
7. The pumping ring assembly according to claim 1, characterized in that: The upper surface of the limiting ring is 1 mm to 2 mm higher than the upper surface of the air extraction hole.
8. The pumping ring assembly according to claim 1, characterized in that: The limiting ring is a circular ring structure, and the corresponding diameter is matched according to different process requirements.
9. A semiconductor reaction chamber, characterized in that: At least comprises the pumping ring assembly according to any one of claims 1 to 8.