Light emitting device and wavelength conversion device

Abstract

The utility model relates to a light-emitting device. A plurality of first grooves and a metal shading layer are formed on the surface of a first light-transmitting substrate mainly through deposition, lithography and etching processes. A wavelength conversion unit is arranged in the first groove of the first light-transmitting substrate, wherein the metal shading layer is located around the first groove and the wavelength conversion unit. And a second light-transmitting substrate is connected with the first light-transmitting substrate, so that the wavelength conversion unit is sealed between the first light-transmitting substrate and the second light-transmitting substrate to isolate external moisture and air. The at least one light-emitting diode wafer is used for projecting generated light rays to the wavelength conversion unit, the light rays which do not pass through the wavelength conversion unit are shielded or reflected by the metal light shielding layer, and the light rays are guided to the wavelength conversion unit, so that the light-emitting efficiency of the light-emitting device is improved.

Description

Technical Field

[0001] The utility model relates to a light emitting device and a wavelength conversion device, which can effectively isolate external moisture and air and are beneficial to improving light emitting efficiency. Background Art

[0002] Quantum dots are nanoparticles of semiconductor materials, and the size of quantum dots is usually between 2 and 50 nanometers. The semiconductor materials currently being studied are mainly II-VI materials, such as ZnS, CdS, CdSe, etc., among which CdSe is the most popular.

[0003] The photoelectric properties of quantum dots will change with changes in size. Larger quantum dots will emit light with a longer wavelength when exposed to short-wavelength light. For example, quantum dots of 5 to 6 nanometers may emit orange or red light. Smaller quantum dots will emit light with a shorter wavelength when exposed to short-wavelength light. For example, quantum dots of 2 to 3 nanometers may emit blue or green light. The actual color of the light still depends on the material composition of the quantum dots.

[0004] Compared with traditional LEDs or fluorescent lamps, quantum dot LEDs can produce light close to a continuous spectrum and have the characteristics of high color rendering. Currently, only high-energy-consuming incandescent lamps and halogen lamps can achieve the characteristics of a continuous spectrum. Therefore, quantum dot LEDs can meet the requirements of light quality and low energy consumption at the same time. In addition, applying quantum dots to displays can achieve better color display characteristics, making quantum dots the focus of the development of a new generation of light-emitting devices and displays.

[0005] Although quantum dots have the above advantages and characteristics, they are easily damaged by moisture and oxygen, which shortens the life of quantum dots. Currently, atomic layer deposition (ALD) is commonly used to form a protective film on the surface of quantum dots to isolate quantum dots from moisture and oxygen in the outside world, thereby extending the life of quantum dots. Utility Model Content

[0006] The utility model proposes a novel light-emitting device and wavelength conversion device, which mainly forms a plurality of grooves and a metal light-shielding layer on the surface of a first light-transmitting substrate through deposition, lithography and etching processes, wherein the metal light-shielding layer is located around the grooves. A wavelength conversion unit is arranged in the grooves of the first light-transmitting substrate, and is connected and covered by a second light-transmitting substrate with the grooves and the wavelength conversion unit on the first light-transmitting substrate, so that the wavelength conversion unit is sealed between the first light-transmitting substrate and the second light-transmitting substrate to isolate the wavelength conversion unit from water vapor and oxygen in the outside.

[0007] The first transparent substrate of the wavelength conversion device can be used to connect a light-emitting diode, so that there is a first transparent substrate between the light-emitting diode and the wavelength conversion unit, wherein the light-emitting diode does not directly contact the wavelength conversion unit. In this way, the heat generated by the light-emitting diode will not be directly transferred to the wavelength conversion unit, so as to prevent the wavelength conversion unit from being in a high temperature environment for a long time and deteriorating.

[0008] The metal light-shielding layer of the utility model is arranged around the groove and the wavelength conversion unit, and is used to block the light generated by the light-emitting diode, so that the light of the light-emitting diode will not directly penetrate the first transparent substrate and the second transparent substrate and be transmitted to the outside of the light-emitting device or the wavelength conversion device, causing the light color generated by the light-emitting device to be uneven.

[0009] The metal light shielding layer can be used to reflect the light that has not passed through the wavelength conversion device, wherein the reflected light will be guided out through the wavelength conversion unit after multiple reflections or scatterings, which is beneficial to improve the luminous efficiency. In addition, the provision of the metal light shielding layer is more conducive to the alignment and connection of the first light-transmitting substrate and the second light-transmitting substrate, and can further improve the effect of isolating the external moisture and air.

[0010] In order to achieve the above-mentioned purpose, the utility model proposes a light-emitting device, comprising: a wavelength conversion device, comprising: a first transparent substrate, comprising at least one first groove, the first groove being located on a first surface of the first transparent substrate; at least one wavelength conversion unit being located in the first groove of the transparent substrate; a metal light-shielding layer being arranged on the first surface of the first transparent substrate and being located around the first groove and the wavelength conversion unit; a second transparent substrate being connected to the first transparent substrate or the metal light-shielding layer and covering the first groove of the first transparent substrate, the wavelength conversion unit and the metal light-shielding layer; and at least one light-emitting diode chip being adjacent to the first transparent substrate or the second transparent substrate and being used to project a generated light to the wavelength conversion unit, wherein the metal light-shielding layer is used to block or reflect part of the light so that the light is guided to the wavelength conversion unit.

[0011] The utility model proposes a wavelength conversion device, comprising: a first light-transmitting substrate, comprising at least one first groove located on a first surface of the first light-transmitting substrate; at least one wavelength conversion unit located in the first groove of the first light-transmitting substrate; a metal light-shielding layer, arranged on the first surface of the first light-transmitting substrate and located around the first groove; and a second light-transmitting substrate, connected to the first light-transmitting substrate or the metal light-shielding layer, and covering the first groove of the first light-transmitting substrate, the wavelength conversion unit and the metal light-shielding layer.

[0012] In at least one embodiment of the light emitting device and wavelength conversion device of the present invention, the second transparent substrate includes at least one second groove facing the first groove of the first transparent substrate, and a wavelength conversion unit is disposed in the second groove of the second transparent substrate.

[0013] In at least one embodiment of the light emitting device and the wavelength conversion device of the present invention, the wavelength conversion unit includes a plurality of quantum dots or a plurality of phosphors.

[0014] In at least one embodiment of the light emitting device and the wavelength conversion device of the present invention, a shielding unit is disposed around the first light transparent substrate and the second light transparent substrate and is located around the metal light shielding layer between the first light transparent substrate and the second light transparent substrate.

[0015] In at least one embodiment of the light-emitting device and the wavelength conversion device of the present invention, the shielding unit includes a bottom, a retaining wall and at least one setting space, the setting space is located at the bottom and is aligned with the first groove of the first transparent substrate, and the light-emitting diode chip is set in the setting space of the shielding unit, and the retaining wall is connected to the bottom and is located around the first transparent substrate, the metal shading layer and the second transparent substrate.

[0016] The light-emitting device and the wavelength conversion device described in the utility model can effectively improve the light-emitting efficiency and light-emitting quality of the light-emitting device, and can extend the service life of the light-emitting device and the wavelength conversion device. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The utility model is further described in detail below in conjunction with the accompanying drawings and specific implementation methods.

[0018] Figures 1 to 7 A schematic diagram of the process steps of an embodiment of a method for manufacturing a wavelength conversion device of the utility model;

[0019] Figure 8 It is a cross-sectional schematic diagram of an embodiment of the wavelength conversion device of the utility model;

[0020] Fig. 9 A schematic diagram of the process steps of an embodiment of a method for manufacturing a second light-transmitting substrate of a wavelength conversion device of the utility model;

[0021] Fig.10 It is a cross-sectional schematic diagram of another embodiment of the wavelength conversion device of the utility model;

[0022] Fig.11 It is a cross-sectional schematic diagram of an embodiment of a second light-transmitting substrate of the wavelength conversion device of the present invention;

[0023] Fig.12 It is a cross-sectional schematic diagram of an embodiment of the light emitting device of the utility model;

[0024] Fig.13 A top view of an embodiment of the light emitting device of the utility model;

[0025] Fig.14 It is a cross-sectional schematic diagram of another embodiment of the light emitting device of the utility model;

[0026] Fig.15 It is a cross-sectional schematic diagram of another embodiment of the light emitting device of the utility model;

[0027] Fig.16 It is a cross-sectional schematic diagram of another embodiment of the light emitting device of the utility model.

[0028] Description of Reference Numerals

[0029] 10. Wavelength conversion device;

[0030] 100. Light-emitting device;

[0031] 11. a first light-transmitting substrate;

[0032] 111, first groove;

[0033] 112. first surface;

[0034] 12. Wavelength conversion unit;

[0035] 121. Quantum dots;

[0036] 123. Colloid;

[0037] 13. Metal layer;

[0038] 131. Metal shading layer;

[0039] 15. Photoresist layer;

[0040] 151, a first photoresist pattern layer;

[0041] 153, a second photoresist pattern layer;

[0042] 17. A second light-transmitting substrate;

[0043] 171, second groove;

[0044] 172, second surface;

[0045] 20. Light emitting diode array;

[0046] 21. Light-emitting diode chip;

[0047] 23. Shielding unit;

[0048] 231. Set up space;

[0049] 233. Retaining wall;

[0050] 235, bottom;

[0051] 25. Circuit board;

[0052] L, light;

[0053] L1, first ray;

[0054] L2, second light;

[0055] L3, third light. DETAILED DESCRIPTION

[0056] Figures 1 to 7 FIG. 1 is a schematic diagram of the process steps of an embodiment of a method for manufacturing a wavelength conversion device of the utility model. Figure 1 As shown, a first transparent substrate 11 is provided, and a metal layer 13 is formed on a first surface 112 of the first transparent substrate 11. In one embodiment of the present invention, the first transparent substrate 11 is a material with transparent and waterproof properties, for example, the first transparent substrate 11 can be a glass substrate or a sapphire substrate, wherein the thickness of the first transparent substrate 11 can be between 50um and 1mm.

[0057] In addition, the metal layer 13 may include rare earth elements, chemically inactive metals or alloys thereof, such as molybdenum (Mo), gold (Au), neodymium (Nd), niobium (Nb), yttrium (Y) or molybdenum niobium (MoNb). The metal layer 13 may be disposed on the first surface 112 of the first transparent substrate 11 by a deposition process, such as sputtering or evaporation, wherein the thickness of the metal layer 13 may be between 10 micrometers and 500 micrometers. The material and thickness of the first transparent substrate 11 and the metal layer 13 are only one embodiment of the present invention and are not intended to limit the scope of the present invention.

[0058] like Figure 2 As shown, a photoresist is coated on the metal layer 13 to form a photoresist layer 15 on the surface of the metal layer 13 .

[0059] like Figure 3 As shown, a lithography process is performed on the photoresist layer 15 on the surface of the metal layer 13 to define and form a first photoresist pattern layer 151 on a portion of the surface of the metal layer 13, wherein a portion of the metal layer 13 is not blocked by the first photoresist pattern layer 151. The lithography process includes processes such as exposure, development, baking and heating.

[0060] like Figure 4 As shown, the metal layer 13 and the first transparent substrate 11 not blocked by the first photoresist pattern layer 151 are etched to form a metal light shielding layer 131 and at least one first groove 111 on the first surface 112 of the first transparent substrate 11 .

[0061] The etching process may include dry etching and wet etching, both of which can form the metal light shielding layer 131 and the first groove 111 on the first transparent substrate 11. Generally speaking, wet etching is isotropic etching, and the sidewalls of the first groove 111 formed by wet etching usually have a curvature. In contrast, dry etching is anisotropic etching, and the sidewalls of the first groove 111 formed by dry etching are usually perpendicular to the bottom surface, similar to Figure 4 The cross-sectional shape of the first groove 111 in FIG. Figure 4 The square cross-sectional shape of the first groove 111 is only an illustrative embodiment of the present invention and is not a limitation of the scope of the present invention. In different embodiments, the sidewall of the first groove 111 may have a curvature.

[0062] like Figure 5 As shown, the first photoresist pattern layer 151 on the surface of the metal light shielding layer 131 is removed. For example, the first photoresist pattern layer 151 can be removed by an organic or inorganic solvent, or by plasma.

[0063] like Figure 6 As shown, a wavelength conversion unit 12 is disposed in a first groove 111 of a first light-transmitting substrate 11, wherein the wavelength conversion unit 12 may include a mixture of a plurality of quantum dots 121 and a colloid 123, or a mixture of a plurality of phosphors and a colloid 123. The colloid 123 may be a material having light-transmitting properties, such as polymethyl methacrylate (PMMA), ethylene terephthalate (PET), polystyrene (PS), polyethylene (PP), epoxy, and silicone. The quantum dots 121 may be nanoparticles formed of semiconductor materials, and the semiconductor materials currently studied are II-VI materials, such as ZnS, CdS, and CdSe.

[0064] Specifically, the wavelength of the light generated by the quantum dot 121 after being illuminated is related to its size, while the wavelength of the light converted by the phosphor is related to its material. In one embodiment of the utility model, the first light-transmissive substrate 11 may have a plurality of first grooves 111, wherein the wavelength conversion unit 12 in each first groove 111 may be provided with quantum dots 121 of different sizes or phosphors of different materials.

[0065] The quantum dots 121 have high surface activity and are easily reacted with air and water vapor. When the quantum dots 121 and the colloid 123 are mixed, the quantum dots 121 may produce agglomeration effects, thereby reducing the optical properties of the quantum dots 121. In addition, external water vapor or air may pass through the colloid 123 and contact the surface of the quantum dots 121, thereby causing the quantum dots 121 to oxidize. Therefore, a protective film is generally formed on the surface of the quantum dots 121 through atomic layer deposition to isolate the quantum dots 121 from external water vapor or oxygen.

[0066] In practical applications, the thickness of the wavelength conversion unit 12 may affect the wavelength distribution of the converted light, wherein the thickness of the wavelength conversion unit 12 is related to the depth of the first groove 111. Therefore, the depth of the first groove 111 may need to have certain specifications, for example, the depth of the first groove 111 may be between 10 micrometers and 500 micrometers.

[0067] In one embodiment of the present invention, Figure 7 and Figure 8 As shown, a second transparent substrate 17 is connected to the first transparent substrate 11 or the metal light shielding layer 131, wherein the second transparent substrate 17 covers the first groove 111 and the wavelength conversion unit 12 on the first transparent substrate 11, so that the wavelength conversion unit 12 is sealed between the first transparent substrate 11 and the second transparent substrate 17, so as to further isolate the wavelength conversion unit 12 from contact with external moisture or air. For example, the first transparent substrate 11 and the second transparent substrate 17 can have the same size and material, and can be connected to the first transparent substrate 11 and the second transparent substrate 17 by a connecting colloid.

[0068] Then, the wavelength conversion unit 12 in the first groove 111 of the first light-transmitting substrate 11 is hardened and formed, for example, the colloid 123 of the wavelength conversion unit 12 can be hardened by baking heating or irradiating light. In one embodiment of the utility model, the colloid 123 of the wavelength conversion unit 12 can be hardened after the first light-transmitting substrate 11 is connected to the second light-transmitting substrate 17. In another embodiment of the utility model, the colloid 123 of the wavelength conversion unit 12 can be hardened first, and then the first light-transmitting substrate 11 and the second light-transmitting substrate 17 are connected.

[0069] After the first light-transmitting substrate 11 and the second light-transmitting substrate 17 are connected, the metal light-shielding layer 131 will be located between the first light-transmitting substrate 11 and the second light-transmitting substrate 17. The provision of the metal light-shielding layer 131 will facilitate the alignment and connection between the first light-transmitting substrate 11 and the second light-transmitting substrate 17, and can further improve the effect of isolating the moisture or oxygen from the outside. In addition, the metal light-shielding layer 131 can be used to reflect and shield part of the light L generated by the light-emitting diode chip 21 to improve the light conversion utilization rate, and prevent the light L generated by the light-emitting diode chip 21 from being directly transmitted to the outside of the wavelength conversion device 10 without passing through the wavelength conversion unit 12, thereby causing the light color of the wavelength conversion device 10 to be uneven.

[0070] In practical applications, the wavelength conversion device 10 can be directly applied to the light emitting device 100, such as Fig.12 In different embodiments, it is also possible to Figure 8 The wavelength conversion device 10 is cut along the dotted line, and the cut wavelength conversion device 10 is then used.

[0071] In another embodiment of the present invention, Fig. 9 As shown, a second surface 172 of the second light-transmissive substrate 17 is used to connect to the first surface 112 of the first light-transmissive substrate 11 , and at least one second groove 171 is formed on the second surface 172 of the second light-transmissive substrate 17 .

[0072] Specifically, a photoresist layer 15 may be coated on the second surface 172 of the second light-transmitting substrate 17, and the photoresist layer 15 may be subjected to a lithography process to form a second photoresist pattern layer 153 on the second surface 172 of the second light-transmitting substrate 17. Then, an etching process may be performed on the second light-transmitting substrate 17 not shielded by the second photoresist pattern layer 153 to form at least one second groove 171 on the second surface 172 of the second light-transmitting substrate 17, wherein the number and / or position of the first grooves 111 on the first light-transmitting substrate 11 are the same as the second grooves 171 on the second light-transmitting substrate 17.

[0073] like Fig.10 As shown, the wavelength conversion unit 12 is disposed in the second groove 171. Then the second surface 172 of the second light-transmitting substrate 17 is directed toward the first surface 112 of the first light-transmitting substrate 11, so that the second groove 171 of the second light-transmitting substrate 17 is aligned with the first groove 111 of the first light-transmitting substrate 11, and the first light-transmitting substrate 11 and the second light-transmitting substrate 17 are connected. The first groove 111 on the first light-transmitting substrate 11 will be connected with the second groove 171 on the second light-transmitting substrate 17, and a closed accommodation space will be formed, wherein the wavelength conversion unit 12 will be sealed in the accommodation space formed by the first groove 111 and the second groove 171. Then, according to subsequent needs, along Fig.10The dotted line cuts the wavelength conversion device 10.

[0074] When the second light-transmitting substrate 17 has the second groove 171 and the wavelength conversion unit 12, the depth of the first groove 111 of the first light-transmitting substrate 11 can be adjusted so that the thickness of the wavelength conversion unit 12 on the first light-transmitting substrate 11 and the second light-transmitting substrate 17 as a whole meets the preset thickness. For example, when the second light-transmitting substrate 17 has the second groove 171, the depth of the first groove 111 of the first light-transmitting substrate 11 can be reduced so that the sum of the depths of the first groove 111 and the second groove 171 is between 10 micrometers and 500 micrometers.

[0075] In another embodiment of the present invention, Fig.11 As shown, the metal layer 13 may be first formed on the second surface 172 of the second light-transmitting substrate 17, and then the second photoresist pattern layer 153 may be formed on the surface of the metal layer 13. Then, the metal layer 13 and the second surface 172 of the second light-transmitting substrate 17 that are not blocked by the second photoresist pattern layer 153 are etched to form a metal light-shielding layer 131 and at least one second groove 171 on the second surface 172 of the second light-transmitting substrate 17.

[0076] Specifically, Fig.11 The structure of the second transparent substrate 17 will be similar to Figure 5 The structure of the first light-transmitting substrate 11 is similar to that of the first light-transmitting substrate 11, wherein the first surface 112 of the first light-transmitting substrate 11 and the second surface 172 of the second light-transmitting substrate 17 both have a metal light-shielding layer 131. When connecting the first light-transmitting substrate 11 and the second light-transmitting substrate 17, the metal light-shielding layer 131 of the first light-transmitting substrate 11 can be connected to the metal light-shielding layer 131 of the second light-transmitting substrate 17 through a connecting colloid, and it is beneficial to align and connect the first light-transmitting substrate 11 and the second light-transmitting substrate 17.

[0077] Figure 8 1 is a cross-sectional schematic diagram of an embodiment of the wavelength conversion device of the utility model. The wavelength conversion device 10 mainly includes a first light-transmitting substrate 11, a metal light-shielding layer 131, at least one wavelength conversion unit 12 and a second light-transmitting substrate 17, wherein the first surface 112 of the first light-transmitting substrate 11 has at least one first groove 111, and the wavelength conversion unit 12 is located in the first groove 111.

[0078] The metal light shielding layer 131 is disposed on the first surface 112 of the first transparent substrate 11 and around the first groove 111 and the wavelength conversion unit 12 . For example, the metal light shielding layer 131 can be disposed on the first surface 112 of the first transparent substrate 11 where the first groove 111 is not formed.

[0079] The second light-transmitting substrate 17 is connected to the first light-transmitting substrate 11 or the metal light-shielding layer 131, and covers the first groove 111, the wavelength conversion unit 12 and / or the metal light-shielding layer 131 on the first light-transmitting substrate 11, so as to encapsulate the wavelength conversion unit 12 between the first light-transmitting substrate 11 and the second light-transmitting substrate 17. Specifically, there may be a connecting colloid between the second light-transmitting substrate 17 and the metal light-shielding layer 131 of the first light-transmitting substrate 11.

[0080] In another embodiment of the present invention, Fig.10 As shown, the second light-transmitting substrate 17 may include at least one second groove 171, wherein the second groove 171 has a wavelength conversion unit 12. The first groove 111 of the first light-transmitting substrate 11 faces the second groove 171 of the second light-transmitting substrate 17, so that the first groove 111 of the first light-transmitting substrate 11 is connected to the second groove 171 of the second light-transmitting substrate 17, wherein the metal light-shielding layer 131 is disposed around the first groove 111 and the second groove 171.

[0081] Fig.12 FIG. 1 is a cross-sectional view of an embodiment of the light emitting device of the present invention. The light emitting device 100 comprises a wavelength conversion device 10, at least one light emitting diode chip 21 and a shielding unit 23, wherein the structure of the wavelength conversion device 10 is as follows: Figure 8 or Fig.10 In another embodiment of the present invention, the light emitting device 100 may also be a display.

[0082] The LED chip 21 is adjacent to the first transparent substrate 11 or the second transparent substrate 17 of the wavelength conversion device 10, wherein the LED chip 21 is used to generate a light L and project the light L to the wavelength conversion unit 12 between the first transparent substrate 11 and the second transparent substrate 17. The wavelength conversion unit 12 absorbs the energy of the light L and converts and generates a first light L1, wherein the wavelength of the light L is smaller than the wavelength of the first light L1.

[0083] In one embodiment of the present invention, there may be a plurality of LED chips 21 and wavelength conversion units 12 to form a LED array 20. Each LED chip 21 faces each wavelength conversion unit 12 and projects the generated light L to each wavelength conversion unit 12.

[0084] The LED chip 21 can be placed on a circuit board 25 by flip chip, for example, a chip scale package (CSP) LED chip 21 can be placed on the circuit board 25 by flip chip. The flip chip arrangement of the LED chip 21 is only one embodiment of the present invention and is not a limitation of the scope of the present invention. In different embodiments, the LED chip 21 can be a vertical chip or a face-up chip.

[0085] The wavelength conversion unit 12 can be provided with quantum dots 121 of different sizes or phosphors of different materials, and convert the light L generated by the light emitting diode chip 21 into the first light L1, the second light L2 and the third light L3, respectively. The wavelength of the light L will be smaller than the first light L1, the second light L2 and the third light L3. For example, the light L can be ultraviolet light or blue light, and the first light L1, the second light L2 and the third light L3 are red light, green light and blue light respectively.

[0086] In actual application, most of the light L generated by the LED chip 21 will pass through the first transparent substrate 11 and project to the wavelength conversion unit 12. However, part of the light L may pass through the first transparent substrate 11 and the second transparent substrate 17 around the first groove 111, and be transmitted to the outside of the light emitting device 100 without passing through the wavelength conversion unit 12. In this way, light L of different colors will be formed around the first light L1, the second light L2 and / or the third light L3, and the light color generated by the wavelength conversion device 10 will be uneven.

[0087] To this end, the present invention forms a metal light shielding layer 131 around the first groove 111 and the wavelength conversion unit 12. Fig.13 As shown, the metal light shielding layer 131 can be used to shield the light L that does not pass through or project to the wavelength conversion unit 12, so as to avoid light leakage around the first light L1, the second light L2 and / or the third light L3. In addition, the metal light shielding layer 131 can also be used to reflect part of the light L, such as the light L that does not pass through the wavelength conversion unit 12, wherein the light L will be guided to the wavelength conversion unit 12 after multiple reflections or scatterings, which is beneficial to improve the brightness of the first light L1, the second light L2 and / or the third light L3 generated by the conversion of the wavelength conversion unit 12.

[0088] The shielding unit 23 is disposed around the first transparent substrate 11 and the second transparent substrate 17, and covers the metal light shielding layer 131 between the first transparent substrate 11 and the second transparent substrate 17. In one embodiment of the utility model, the shielding unit 23 may include at least one setting space 231, a retaining wall 233 and / or a bottom 235, wherein the setting space 231 is aligned with the first groove 111 of the first transparent substrate 11, and the light emitting diode chip 21 is located in the setting space 231 of the shielding unit 23. For example, the setting space 231 may be a through hole set on the bottom 235 of the shielding unit 23, and the retaining wall 233 is connected to the bottom 235 and surrounds the setting space 231 and / or the bottom 235. The shielding unit 23 may include a mixture of colloid and opaque powder, for example, the colloid may be silica gel or epoxy resin, and the opaque powder may be titanium dioxide.

[0089] Specifically, when the wavelength conversion device 10 is connected to the light emitting diode array 20, the retaining wall 233 of the shielding unit 23 is located around the first light-transmitting substrate 11 and the second light-transmitting substrate 17. The retaining wall 233 completely covers the side surface of the first light-transmitting substrate 11 and part of the side surface of the second light-transmitting substrate 17, and covers the periphery of the metal light-shielding layer 131 located between the first light-transmitting substrate 11 and the second light-transmitting substrate 17, so that the light L will not be transmitted to the outside from the side surface of the wavelength conversion device 10. For example, the height of the retaining wall 233 of the shielding unit 23 is higher than the metal light-shielding layer 131.

[0090] In actual application, the shielding unit 23 can achieve the light shielding effect as long as it can shield the side surface of the first light-transmitting substrate 11 and the metal light-shielding layer 131. Therefore, the above-mentioned bottom 235 and the setting space 231 are not necessary components of the shielding unit 23, nor are they limitations on the scope of rights of the utility model. In one embodiment of the utility model, the light-emitting diode chip 21 can be fixed to the lower surface of the first light-transmitting substrate 11 by adhesive and electrically connected to the circuit board 25, so that the shielding unit 23 does not need to be provided with the setting space 231 and the bottom 235 shown in the figure.

[0091] In another embodiment of the present invention, Fig.14 As shown, the second light-transmitting substrate 17 may include at least one second groove 171, wherein when the second light-transmitting substrate 17 is connected to the first light-transmitting substrate 11, the second groove 171 will be aligned with the first groove 111 to form a closed space, and the wavelength conversion unit 12 is located in the first groove 111 and the second groove 171. In addition, the metal light-shielding layer 131 is located around the first groove 111, the second groove 171 and the wavelength conversion unit 12.

[0092] In another embodiment of the present invention, Fig.15 and Fig.16 As shown, Figure 8 and Fig.10 The wavelength conversion device 10 cut along the dotted line in the figure is connected to the shielding unit 23 and the light emitting diode chip 21 .

[0093] The above is only a preferred embodiment of the present invention and is not intended to limit the scope of the present invention. That is, all equivalent changes and modifications based on the shape, structure, characteristics and spirit described in the scope of the patent application of the present invention should be included in the scope of the patent application of the present invention.

Claims

1. A light emitting device, characterized in that: include: A wavelength conversion device, comprising: A first light-transmitting substrate, comprising at least one first groove, wherein the first groove is located on a first surface of the first light-transmitting substrate; At least one wavelength conversion unit is located in the first groove of the first light-transmissive substrate; A metal light shielding layer is disposed on the first surface of the first light-transmissive substrate and is located around the first groove and the wavelength conversion unit; a second light-transmitting substrate connected to the first light-transmitting substrate or the metal light-shielding layer and covering the first groove of the first light-transmitting substrate, the wavelength conversion unit and the metal light-shielding layer; and At least one light emitting diode chip is adjacent to the first transparent substrate or the second transparent substrate and is used to project a generated light to the wavelength conversion unit, wherein the metal light shielding layer is used to shield or reflect part of the light so that the light is guided to the wavelength conversion unit.

2. The light emitting device according to claim 1, characterized in that: The second light-transmissive substrate includes at least one second groove, the second groove faces the first groove of the first light-transmissive substrate, and the wavelength conversion unit is disposed in the second groove of the second light-transmissive substrate.

3. The light emitting device according to claim 1, characterized in that: The invention comprises a shielding unit which is arranged around the first light-transmitting substrate and the second light-transmitting substrate and is located around the metal light-shielding layer between the first light-transmitting substrate and the second light-transmitting substrate.

4. The light emitting device according to claim 3, characterized in that: The shielding unit includes a bottom, a retaining wall and at least one setting space. The setting space is located at the bottom and is aligned with the first groove of the first transparent substrate. The light-emitting diode chip is set in the setting space of the shielding unit. The retaining wall is connected to the bottom and is located around the first transparent substrate, the metal shading layer and the second transparent substrate.

5. A wavelength conversion device, characterized in that: include: A first light-transmitting substrate, comprising at least one first groove, wherein the first groove is located on a first surface of the first light-transmitting substrate; At least one wavelength conversion unit is located in the first groove of the first light-transmissive substrate; a metal light shielding layer, disposed on the first surface of the first light-transmissive substrate and located around the first groove; and A second light-transmitting substrate is connected to the first light-transmitting substrate or the metal light-shielding layer and covers the first groove of the first light-transmitting substrate, the wavelength conversion unit and the metal light-shielding layer.

6. The wavelength conversion device according to claim 5, characterized in that: The second light-transmissive substrate includes at least one second groove, the second groove faces the first groove of the first light-transmissive substrate, and the wavelength conversion unit is disposed in the second groove of the second light-transmissive substrate.

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