Reaction source supply device

By designing a reaction source supply device, using multiple carrier gas delivery branch pipes and uniform dispersion components, the carrier gas enters the liquid reaction source from multiple locations and forms small bubbles, which solves the problem of low contact area in the prior art, resulting in low reaction rate and The problem of particulate matter generation achieves more efficient semiconductor reactions and lower particulate matter generation.

CN222524665UActive Publication Date: 2025-02-25BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Patent Information

Application Number
CN202420265263.4
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-02-02
Publication Date
2025-02-25
Estimated Expiration
2034-02-02

AI Technical Summary

Technical Problem

In the prior art, when the liquid organometallic precursor comes into contact with the carrier gas, the contact area is small, resulting in a low rate and production capacity of semiconductor reactions, and a liquid reaction source that is easily decomposed produces particulate matter when large bubbles burst.

Method used

A reaction source supply device is designed, including a receiving component, a carrier gas conveying component and a uniform dispersion component. The carrier gas conveying member is in communication with the carrier gas conveying main pipe through multiple carrier gas conveying branches. The carrier gas outlet is located in the liquid reaction source, so that the carrier gas enters the liquid reaction source from multiple positions, and small bubbles are formed through the uniform dispersion member to increase the Gas-liquid mass transfer area.

Benefits of technology

By increasing the mass transfer area of ​​gas-liquid, the concentration of the liquid reaction source steam carried by the carrier gas is increased, the rate and production capacity of semiconductor reactions are enhanced, and particulate matter generated by large bubble rupture is reduced.

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Abstract

The utility model provides a reaction source supply device, which comprises an accommodating part, a carrier gas conveying part and a uniform flow dispersing part, and is characterized in that the accommodating part is used for accommodating a liquid reaction source and can be communicated with a reaction chamber of semiconductor equipment; the carrier gas conveying component comprises a carrier gas conveying main pipe and a plurality of carrier gas conveying branch pipes communicated with the carrier gas conveying main pipe, the carrier gas conveying main pipe is used for conveying carrier gas to the carrier gas conveying branch pipes, each carrier gas conveying branch pipe is provided with a carrier gas outlet, and the carrier gas outlets are located in the containing component. The carrier gas outlet is used for discharging carrier gas in the carrier gas conveying branch pipe, and the uniform flow dispersing component is arranged at the carrier gas outlet and used for uniformly dispersing the carrier gas discharged from the carrier gas outlet to form bubbles. The reaction source supply device provided by the utility model can improve the reaction rate and productivity of the semiconductor, and can reduce the generation of particulate matters.
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Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a reaction source supply device. Background Art

[0002] The semiconductor thin film deposition process can be achieved by a chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In the chemical vapor deposition process and the atomic layer deposition process, a liquid organic metal precursor can be used as a reaction source to prepare a metal film or a metallized film.

[0003] In the prior art, the liquid organometallic precursor can be contained in a stainless steel cylinder, and a heating belt can be wrapped around the outside of the cylinder to heat the cylinder, so that the liquid organometallic precursor can generate organometallic precursor vapor, and then the carrier gas is introduced into the cylinder to carry the organometallic precursor vapor into the reaction chamber for a thin film deposition process. For a thin film deposition process with a high film deposition rate requirement, a carrier gas pipe for conveying the carrier gas can be extended into the cylinder, and the gas outlet of the carrier gas pipe can be located below the liquid surface of the liquid organometallic precursor, so that the carrier gas can be introduced below the liquid surface of the liquid organometallic precursor, and the carrier gas is brought into contact with the organometallic precursor liquid through a bubbling air intake method to carry the organometallic precursor vapor.

[0004] However, when the carrier gas is brought into contact with the liquid reaction source by means of bubbling air intake, the contact area between the carrier gas and the liquid reaction source is small, and the amount of liquid reaction source vapor carried by the carrier gas is small, resulting in a lower rate and production capacity of the semiconductor reaction. In addition, large bubbles may form at the outlet of the carrier gas tube. The large bubbles float to the surface of the liquid reaction source and burst, causing some easily decomposable liquid reaction sources to decompose, thereby generating particulate matter. Utility Model Content

[0005] The utility model aims to solve at least one of the technical problems existing in the prior art, and proposes a reaction source supply device, which can improve the rate and production capacity of semiconductor reactions and reduce the generation of particulate matter.

[0006] In order to achieve the purpose of the utility model, a reaction source supply device is provided, comprising:

[0007] A containing component, a carrier gas delivery component and a uniform flow dispersion component, wherein the containing component is used to contain a liquid reaction source and can be communicated with a reaction chamber of a semiconductor device;

[0008] The carrier gas delivery component includes a carrier gas delivery main pipe and a plurality of carrier gas delivery branch pipes respectively connected to the carrier gas delivery main pipe, the carrier gas delivery main pipe is used to deliver carrier gas to the plurality of carrier gas delivery branch pipes respectively, each of the carrier gas delivery branch pipes has a carrier gas outlet, the carrier gas outlet is located in the accommodating component, the carrier gas outlet is used to discharge the carrier gas in the carrier gas delivery branch pipe, and the uniform flow dispersion component is arranged at the carrier gas outlet, and is used to uniformly disperse the carrier gas discharged through the carrier gas outlet to form bubbles.

[0009] Optionally, the uniform flow dispersion component is provided with a connecting port and a plurality of uniform flow dispersion holes, the connecting port being connected to the carrier gas outlet for allowing the carrier gas discharged through the carrier gas outlet to enter the interior of the uniform flow dispersion component, and the plurality of uniform flow dispersion holes are spaced apart in the radial direction of the uniform flow dispersion component and are all connected to the interior of the uniform flow dispersion component for uniformly dispersing and discharging the carrier gas inside the uniform flow dispersion component to form bubbles.

[0010] Optionally, in the radial direction of the uniform flow dispersing component, the aperture of the uniform flow dispersing hole close to the center of the uniform flow dispersing component is smaller than the aperture of the uniform flow dispersing hole close to the edge of the uniform flow dispersing component.

[0011] Optionally, in the radial direction of the uniform flow dispersing component, the aperture of the uniform flow dispersing hole gradually increases from the center of the uniform flow dispersing component to the edge of the uniform flow dispersing component.

[0012] Optionally, the plurality of uniform flow dispersion holes are divided into a plurality of uniform flow dispersion hole groups, each of the uniform flow dispersion hole groups includes a plurality of the uniform flow dispersion holes, the plurality of the uniform flow dispersion hole groups are spaced apart in the circumferential direction of the uniform flow dispersion component, and the plurality of the uniform flow dispersion holes in each of the uniform flow dispersion hole groups are spaced apart in the radial direction of the uniform flow dispersion component.

[0013] Optionally, a radial dimension of the uniform flow dispersion component is greater than a radial dimension of the carrier gas outlet.

[0014] Optionally, the reaction source supply device further comprises a first filter component, which is disposed in the containing component and is higher than the uniform flow dispersion component, and is used for filtering bubbles in the liquid reaction source.

[0015] Optionally, the first filter component is provided with a plurality of first filter holes, and the plurality of first filter holes are arranged at intervals in the radial direction of the first filter component.

[0016] Optionally, the reaction source supply device also includes a reaction medium conveying component and a second filtering component, the containing component is connected to the reaction chamber through the reaction medium conveying component, and the reaction medium inlet of the reaction medium conveying component is used to allow the carrier gas carrying the liquid reaction source vapor in the containing component to enter the reaction medium conveying component, and the second filtering component is arranged at the reaction medium inlet to filter the bubbles flowing from the containing component to the reaction medium inlet.

[0017] Optionally, the reaction source supply device further includes a purge gas delivery component, the purge gas delivery component is communicated with the accommodating component, and the purge gas outlet is used to discharge the purge gas in the purge gas delivery component.

[0018] The utility model has the following beneficial effects:

[0019] The reaction source supply device provided by the utility model is provided with a plurality of carrier gas delivery branch pipes which are respectively connected with the carrier gas delivery main pipe, and the carrier gas can be discharged into the liquid reaction source by means of the carrier gas outlets of the plurality of carrier gas delivery branch pipes, so that the carrier gas can enter the liquid reaction source from a plurality of positions, so that the carrier gas can contact with the liquid reaction source at a plurality of positions at the same time, thereby making the contact between the carrier gas entering the liquid reaction source and the liquid reaction source more sufficient, so as to increase the gas-liquid mass transfer area, and then increase the carrier gas load, and improve the concentration of the liquid reaction source vapor carried by the carrier gas, so as to improve the rate and production capacity of the semiconductor reaction, and, by providing a uniform flow dispersion component at the carrier gas outlet of the carrier gas delivery branch pipe, the carrier gas discharged through the carrier gas outlet can be uniformly dispersed to form bubbles by means of the uniform flow dispersion component, The bubbles discharged through the uniform flow dispersion component are smaller in size than the bubbles directly discharged through the outlet of the carrier gas tube which is not equipped with the uniform flow dispersion component in the prior art. This can make the contact between the carrier gas entering the liquid reaction source and the liquid reaction source more complete, so as to increase the gas-liquid mass transfer area, thereby increasing the carrier gas load and the concentration of the liquid reaction source vapor carried by the carrier gas, thereby increasing the rate and production capacity of the semiconductor reaction. Moreover, the bubbles discharged through the uniform flow dispersion component can reduce the generation of large-sized bubbles compared to the bubbles directly discharged through the outlet of the carrier gas tube which is not equipped with the uniform flow dispersion component in the prior art, thereby reducing the generation of particulate matter caused by the large-sized bubbles floating to the liquid surface of the liquid reaction source and rupturing. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic diagram of the main structure of a reaction source supply device provided by an embodiment of the utility model;

[0021] Figure 2 A bottom view structural schematic diagram of a uniform flow dispersion component provided in an embodiment of the utility model;

[0022] Figure 3 A schematic diagram of the top view of the reaction source supply device provided in an embodiment of the utility model;

[0023] Figure 4 A schematic diagram of the structure of a first filter component provided in an embodiment of the utility model;

[0024] Figure 5 A schematic structural diagram of a second filter component provided in an embodiment of the utility model. DETAILED DESCRIPTION

[0025] In order to enable those skilled in the art to better understand the technical solution of the present invention, the reaction source supply device provided by the present invention is described in detail below in conjunction with the accompanying drawings.

[0026] like Figure 1 As shown, an embodiment of the utility model provides a reaction source supply device 1, comprising: a containing part 11, a carrier gas delivery part 12 and a uniform flow dispersion part 13, the containing part 11 is used to contain a liquid reaction source, and can be connected to a reaction chamber of a semiconductor device; the carrier gas delivery part 12 comprises a carrier gas delivery main pipe 121 and a plurality of carrier gas delivery branches 122 respectively connected to the carrier gas delivery main pipe 121, the carrier gas delivery main pipe 121 is used to respectively deliver carrier gas to the plurality of carrier gas delivery branches 122, each of the carrier gas delivery branches 122 has a carrier gas outlet, the carrier gas outlet is located in the containing part 11, the carrier gas outlet is used to discharge the carrier gas in the carrier gas delivery branch 122, the uniform flow dispersion part 13 is arranged at the carrier gas outlet, and is used to uniformly disperse the carrier gas discharged through the carrier gas outlet to form bubbles.

[0027] In actual applications, when a bubbling air intake method is used to make the carrier gas contact with the liquid reaction source and carry the liquid reaction source vapor, the liquid level of the liquid reaction source liquid contained in the containing part 11 can be higher than the carrier gas outlet of the carrier gas delivery branch 122, that is, the liquid reaction source liquid contained in the containing part 11 can immerse the carrier gas outlet of the carrier gas delivery branch 122. The carrier gas transported by the carrier gas transport component 12 can first enter the carrier gas transport main pipe 121, and then enter multiple carrier gas transport branch pipes 122 respectively after passing through the multiple carrier gas transport branch pipes 122. After passing through the multiple carrier gas transport branch pipes 122, it can be discharged to below the liquid surface of the liquid reaction source in the containing component 11 through the carrier gas outlet. The carrier gas discharged to below the liquid surface of the liquid reaction source through the carrier gas outlet needs to pass through the uniform flow dispersion component 13 before entering the liquid reaction source. In the process of the carrier gas passing through the uniform flow dispersion component 13, the uniform flow dispersion component 13 can uniformly disperse the carrier gas, so that the carrier gas entering the liquid reaction source can form bubbles. The carrier gas bubbles entering the liquid reaction source can carry the liquid reaction source vapor, and can carry the liquid reaction source vapor to the reaction chamber of the semiconductor equipment, so that the semiconductor process reaction can be carried out with the help of the liquid reaction source vapor.

[0028] The reaction source supply device 1 provided by the embodiment of the utility model is provided with a plurality of carrier gas delivery branch pipes 122 respectively connected with the carrier gas delivery main pipe 121, and the carrier gas can be discharged into the liquid reaction source by means of the carrier gas outlets of the plurality of carrier gas delivery branch pipes 122, so that the carrier gas can enter the liquid reaction source from a plurality of positions, so that the carrier gas can contact with the liquid reaction source at a plurality of positions at the same time, thereby making the contact between the carrier gas entering the liquid reaction source and the liquid reaction source more sufficient, so as to increase the gas-liquid mass transfer area, and then increase the carrier gas load, and improve the concentration of the liquid reaction source vapor carried by the carrier gas, so as to improve the rate and production capacity of the semiconductor reaction, and, by providing a uniform flow dispersion component 13 at the carrier gas outlet of the carrier gas delivery branch pipe 122, the carrier gas discharged through the carrier gas outlet can be uniformly dispersed by means of the uniform flow dispersion component 13. The bubbles are dispersed to form bubbles, and the bubbles discharged through the uniform flow dispersion component 13 are smaller in size than the bubbles directly discharged through the gas outlet of the carrier gas tube which is not provided with the uniform flow dispersion component 13 in the prior art. Therefore, the contact between the carrier gas entering the liquid reaction source and the liquid reaction source can be more complete, so as to increase the gas-liquid mass transfer area, thereby increasing the carrier gas load and the concentration of the liquid reaction source vapor carried by the carrier gas, thereby improving the rate and production capacity of the semiconductor reaction. Moreover, the bubbles discharged through the uniform flow dispersion component 13 are smaller in size than the bubbles directly discharged through the gas outlet of the carrier gas tube which is not provided with the uniform flow dispersion component 13 in the prior art. Therefore, the generation of particulate matter caused by the large-sized bubbles floating to the liquid surface of the liquid reaction source and bursting can be reduced.

[0029] Optionally, the reaction source supply device 1 provided in the embodiment of the utility model can be applied to a semiconductor thin film deposition process using a chemical vapor deposition process, or a semiconductor thin film deposition process using an atomic layer deposition process.

[0030] Optionally, the liquid reaction source may include a liquid organic metal precursor. In a semiconductor thin film deposition process using a chemical vapor deposition process or a semiconductor thin film deposition process using an atomic layer deposition process, using a liquid organic metal precursor as a liquid reaction source can be used to prepare a metal thin film or a metallized thin film.

[0031] Optionally, there may be a plurality of uniform flow dispersing components 13, and the plurality of uniform flow dispersing components 13 are arranged in one-to-one correspondence with the plurality of carrier gas outlets.

[0032] Optionally, the uniform flow dispersion component 13 and the carrier gas delivery branch pipe 122 can be welded.

[0033] like Figure 1 As shown, optionally, the diameter of the carrier gas delivery branch pipe 122 may be smaller than the diameter of the carrier gas delivery main pipe 121 .

[0034] like Figure 1 and Figure 3 As shown, optionally, the number of the carrier gas delivery main pipe 121 can be one, the number of the carrier gas delivery branch pipes 122 can be nine, eight of the nine carrier gas delivery branch pipes 122 can be arranged around another carrier gas delivery branch pipe 122, and one carrier gas delivery branch pipe 122 located in the middle of the nine carrier gas delivery branch pipes 122 can be arranged coaxially with the carrier gas delivery main pipe 121. In other words, the axis of one of the nine carrier gas delivery branch pipes 122 can be colinear with the axis of the carrier gas delivery main pipe 121, and the axes of the other eight carrier gas delivery branch pipes 122 can be parallel to the axis of the carrier gas delivery main pipe 121 but not colinear. However, the number of the carrier gas delivery main pipes 121 and the number of the carrier gas delivery branch pipes 122 are not limited thereto.

[0035] In practical applications, the liquid level of the liquid reaction source contained in the containing part 11 may be higher than the top of the carrier gas delivery branch pipe 122. In other words, the liquid reaction source contained in the containing part 11 may completely immerse the carrier gas delivery branch pipe 122.

[0036] like Figure 2As shown, in one embodiment of the utility model, the uniform flow dispersion component 13 may be provided with a connecting port and a plurality of uniform flow dispersion holes 131, the connecting port being connected to the carrier gas outlet, for allowing the carrier gas discharged through the carrier gas outlet to enter the interior of the uniform flow dispersion component 13, the plurality of uniform flow dispersion holes 131 being spaced apart in the radial direction of the uniform flow dispersion part, and all being connected to the interior of the uniform flow dispersion component 13, for uniformly dispersing and discharging the carrier gas inside the uniform flow dispersion component 13 to form bubbles.

[0037] In actual applications, the carrier gas discharged through the carrier gas outlet can enter the interior of the uniform flow dispersion component 13 through the connecting port, and the carrier gas entering the uniform flow dispersion component 13 can flow to the multiple uniform flow dispersion holes 131, and be uniformly dispersed through the multiple uniform flow dispersion holes 131 and discharged into the liquid reaction source to form bubbles. In other words, the multiple uniform flow dispersion holes 131 can uniformly disperse the carrier gas inside the uniform flow dispersion component 13, and enable the carrier gas entering the liquid reaction source to form bubbles.

[0038] like Figure 1 and Figure 2 As shown, optionally, the uniform flow dispersion component 13 may be disc-shaped, and a communication port is provided on one of two opposite sides of the uniform flow dispersion component 13 , and a plurality of uniform flow dispersion holes 131 are provided on the other side.

[0039] Optionally, the distance between the bottom surface of the uniform flow dispersing component 13 and the bottom surface of the containing component 11 may be 1 cm-2 cm (including the end value).

[0040] like Figure 2 As shown, in one embodiment of the present invention, in the radial direction of the uniform flow dispersion component 13 , the aperture of the uniform flow dispersion hole 131 near the center of the uniform flow dispersion component 13 may be smaller than the aperture of the uniform flow dispersion hole 131 near the edge of the uniform flow dispersion component 13 .

[0041] Such a design is due to the fact that the carrier gas inside the uniform flow dispersion component 13 has a larger flow velocity near the center of the uniform flow dispersion component 13 than the carrier gas near the edge of the uniform flow dispersion component 13 in the radial direction of the uniform flow dispersion component 13. Therefore, by making the aperture of the uniform flow dispersion hole 131 near the center of the uniform flow dispersion component 13 smaller than the aperture of the uniform flow dispersion hole 131 near the edge of the uniform flow dispersion component 13, it can be avoided that most of the carrier gas inside the uniform flow dispersion component 13 is discharged through the uniform flow dispersion hole 131 near the center of the uniform flow dispersion component 13, and only a small part is discharged through the uniform flow dispersion hole 131 near the edge of the uniform flow dispersion component 13, so that the carrier gas discharged through the uniform flow dispersion hole 131 near the center of the uniform flow dispersion component 13 and the carrier gas discharged through the uniform flow dispersion hole 131 near the edge of the uniform flow dispersion component 13 can be relatively uniform, thereby improving the effect of the uniform flow dispersion component 13 on carrier gas uniform flow dispersion.

[0042] like Figure 2 As shown, in one embodiment of the present invention, in the radial direction of the uniform flow dispersing component 13 , the aperture of the uniform flow dispersing hole 131 may gradually increase from the center of the uniform flow dispersing component 13 to the edge of the uniform flow dispersing component 13 .

[0043] Such an aperture design can further make the carrier gas discharged through the uniform flow dispersion holes 131 near the center of the uniform flow dispersion component 13 and the carrier gas discharged through the uniform flow dispersion holes 131 near the edge of the uniform flow dispersion component 13 relatively uniform, thereby further improving the effect of the uniform flow dispersion component 13 on uniform flow dispersion of the carrier gas.

[0044] like Figure 2 As shown, in one embodiment of the utility model, the multiple uniform flow dispersion holes 131 can be divided into multiple uniform flow dispersion hole groups, each uniform flow dispersion hole group can include multiple uniform flow dispersion holes 131, the multiple uniform flow dispersion hole groups are arranged at intervals in the circumferential direction of the uniform flow dispersion component 13, and the multiple uniform flow dispersion holes 131 of each uniform flow dispersion hole group are arranged at intervals along the radial direction of the uniform flow dispersion component 13.

[0045] That is, each uniform flow dispersion hole group may include a plurality of uniform flow dispersion holes 131 whose apertures gradually increase from the center of the uniform flow dispersion component 13 to the edge of the uniform flow dispersion component 13 in the radial direction of the uniform flow dispersion component 13 .

[0046] Optionally, a plurality of flow-uniform dispersion hole groups may be evenly spaced in the circumferential direction of the flow-uniform dispersion component 13 .

[0047] Optionally, the multiple flow dispersing holes 131 of each flow dispersing hole group may be evenly spaced apart along the radial direction of the flow dispersing component 13 .

[0048] Optionally, at the position with the same radial spacing from the center of the uniform flow dispersion component 13, the apertures of the uniform flow dispersion holes 131 in the plurality of uniform flow dispersion hole groups may be the same.

[0049] Optionally, the uniform flow dispersion hole 131 may be a circular hole.

[0050] like Figure 1 As shown, in one embodiment of the present utility model, the radial dimension of the uniform flow dispersion component 13 may be larger than the radial dimension of the carrier gas outlet.

[0051] Such a design allows the carrier gas entering the uniform flow dispersion component 13 from the carrier gas outlet to diffuse radially inside the uniform flow dispersion component 13. Compared with the prior art, the carrier gas entering the liquid reaction source through a plurality of uniform flow dispersion holes 131 spaced apart in the radial direction of the uniform flow dispersion component 13 can simultaneously contact the liquid reaction source over a larger radial range, thereby making the contact between the carrier gas entering the liquid reaction source and the liquid reaction source more sufficient, so as to further increase the gas-liquid mass transfer area, and then further increase the carrier gas load, further increase the concentration of the liquid reaction source vapor carried by the carrier gas, and further increase the rate and production capacity of the semiconductor reaction.

[0052] like Figure 1 As shown, in one embodiment of the present utility model, the reaction source supply device 1 may further include a first filter component 14, which is disposed in the containing component 11 and is higher than the uniform flow dispersion component 13, and is used to filter bubbles in the liquid reaction source.

[0053] Such a design is due to the fact that in actual applications, the carrier gas passing through the uniform flow dispersion component 13 may form a small number of relatively large bubbles at the uniform flow dispersion component 13 and enter the liquid reaction source, and the relatively small bubbles formed by the uniform flow dispersion component 13 may combine with other bubbles to form a small number of relatively large bubbles after entering the liquid reaction source. By setting the first filtering component 14 at a position higher than the uniform flow dispersion component 13 in the containing component 11, and in actual applications, the liquid level of the liquid reaction source can be higher than the first filtering component 14, that is, the liquid reaction source can completely immerse the first filtering component 14, so as to capture and filter a small number of relatively large bubbles in the liquid reaction source with the help of the first filtering component 14, and prevent these small number of relatively large bubbles from floating to the liquid surface of the liquid reaction source, thereby further reducing the generation of particulate matter caused by the large bubbles floating to the liquid surface of the liquid reaction source and bursting.

[0054] like Figure 4 As shown, in an embodiment of the present invention, the first filter component 14 may be provided with a plurality of first filter holes 141 , and the plurality of first filter holes 141 are spaced apart in the radial direction of the first filter component 14 .

[0055] In practical applications, the first filter holes 141 can allow smaller bubbles to pass through, while blocking larger bubbles from passing through, thereby being able to capture and filter the larger bubbles.

[0056] Optionally, the first filter hole 141 may be a square hole.

[0057] like Figure 1As shown, in one embodiment of the utility model, the reaction source supply device 1 may also include a reaction medium conveying component 15 and a second filter component 16. The containing component 11 is connected to the reaction chamber through the reaction medium conveying component 15, and the reaction medium inlet of the reaction medium conveying component 15 is used to allow the carrier gas carrying liquid reaction source vapor in the containing component 11 to enter the reaction medium conveying component 15. The second filter component 16 is arranged at the reaction medium inlet to filter the bubbles flowing from the containing component 11 to the reaction medium inlet.

[0058] In practical applications, the reaction medium inlet of the reaction medium delivery component 15 is higher than the liquid level of the liquid reaction source, and the carrier gas carrying the liquid reaction source vapor in the containing component 11 can flow upward and enter the reaction medium delivery component 15 through the reaction medium inlet. The carrier gas carrying the liquid reaction source vapor entering the reaction medium delivery component 15 can be delivered to the reaction chamber after passing through the reaction medium delivery component 15, so that the semiconductor process reaction can be realized with the help of the liquid reaction source vapor. In practical applications, there may be a small number of carrier gas bubbles carrying the liquid reaction source vapor that float out of the liquid reaction source liquid surface, and the carrier gas bubbles carrying the liquid reaction source vapor may combine with other bubbles to form a small number of large bubbles in the process of flowing upward. By arranging the second filter component 16 at the reaction medium inlet, the small number of large bubbles flowing upward to the reaction medium inlet can be captured and filtered by the second filter component 16, so as to prevent these small number of large bubbles from entering the reaction medium delivery component 15, thereby reducing the generation of particulate matter caused by the rupture of large bubbles entering the reaction medium delivery component 15.

[0059] Optionally, the reaction medium delivery component 15 may include a reaction medium delivery pipe.

[0060] Optionally, the reaction medium inlet may be located at the top of the containing part 11 .

[0061] like Figure 5 As shown, optionally, the second filter component 16 may be provided with a plurality of second filter holes 161 , and the plurality of second filter holes 161 are spaced apart in the radial direction of the second filter component 16 .

[0062] In practical applications, the second filter holes 161 can allow smaller bubbles to pass through, while blocking larger bubbles from passing through, thereby being able to capture and filter the larger bubbles.

[0063] Optionally, the second filter hole 161 may be a square hole.

[0064] like Figure 1As shown, in one embodiment of the present invention, the reaction source supply device 1 may further include a purge gas delivery component 17 , the purge gas delivery component 17 is connected to the containing component 11 , and the purge gas outlet is used to discharge the purge gas in the purge gas delivery component 17 .

[0065] Such a design is because in actual applications, after the containing part 11 is repeatedly used for a long time, particles will inevitably accumulate at locations such as the inside of the containing part 11 or the inlet of the reaction medium. In actual applications, the purge gas outlet of the purge gas delivery part 17 is higher than the liquid level of the liquid reaction source, so that the purge gas delivery part 17 delivers purge gas to the containing part 11 through the purge gas outlet, and the containing part 11 is purged by holding the pressure, so that the particles accumulated at locations such as the inside of the containing part 11 or the inlet of the reaction medium are purged by the purge gas, and the particles accumulated at locations such as the inside of the containing part 11 or the inlet of the reaction medium are blown away, so as to achieve cleaning of locations such as the inside of the containing part 11 or the inlet of the reaction medium, thereby increasing the service life of the reaction source supply device 1, and reducing the particles entering the reaction chamber, thereby improving the semiconductor process effect.

[0066] Optionally, the purge gas delivery component 17 may include a purge gas delivery pipe.

[0067] Optionally, the purge gas outlet may be located at the top of the containing part 11 .

[0068] Optionally, the containing part 11 may include a reaction source bottle.

[0069] Optionally, the containing component 11 may include a containing body 111 and a top cover 112 , wherein the containing body 111 is used to contain a liquid reaction source, and the top cover 112 is disposed on the top of the containing body 111 to seal the containing body 111 .

[0070] Optionally, the carrier gas delivery component 12 , the reaction medium delivery component 15 and the purge gas delivery component 17 may all be connected to the top cover 112 .

[0071] Optionally, the carrier gas delivery component 12 , the reaction medium delivery component 15 and the purge gas delivery component 17 may all be welded to the top cover 112 .

[0072] like Figure 1 and Figure 3 As shown, optionally, the reaction medium delivery component 15 and the purge gas delivery component can be located on both sides of the carrier gas delivery component 12.

[0073] In practical applications, the carrier gas delivery component 12 , the reaction medium delivery component 15 and the purge gas delivery part may be connected to the top cover 112 first, and then the top cover 112 may be placed on the top of the containing body 111 .

[0074] In summary, the reaction source supply device 1 provided in the embodiment of the present invention can improve the rate and production capacity of semiconductor reactions and reduce the generation of particulate matter.

[0075] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, but the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A reaction source supply device, characterized in that: include: A containing component, a carrier gas delivery component and a uniform flow dispersion component, wherein the containing component is used to contain a liquid reaction source and can be communicated with a reaction chamber of a semiconductor device; The carrier gas delivery component includes a carrier gas delivery main pipe and a plurality of carrier gas delivery branch pipes respectively connected to the carrier gas delivery main pipe, the carrier gas delivery main pipe is used to deliver carrier gas to the plurality of carrier gas delivery branch pipes respectively, each of the carrier gas delivery branch pipes has a carrier gas outlet, the carrier gas outlet is located in the accommodating component, the carrier gas outlet is used to discharge the carrier gas in the carrier gas delivery branch pipe, and the uniform flow dispersion component is arranged at the carrier gas outlet, and is used to uniformly disperse the carrier gas discharged through the carrier gas outlet to form bubbles.

2. The reaction source supply device according to claim 1, characterized in that: The uniform flow dispersion component is provided with a connecting port and a plurality of uniform flow dispersion holes. The connecting port is connected with the carrier gas outlet for allowing the carrier gas discharged through the carrier gas outlet to enter the interior of the uniform flow dispersion component. The plurality of uniform flow dispersion holes are spaced apart in the radial direction of the uniform flow dispersion component and are all connected with the interior of the uniform flow dispersion component for uniformly dispersing and discharging the carrier gas inside the uniform flow dispersion component to form bubbles.

3. The reaction source supply device according to claim 2, characterized in that: In the radial direction of the uniform flow dispersing component, the diameter of the uniform flow dispersing holes close to the center of the uniform flow dispersing component is smaller than the diameter of the uniform flow dispersing holes close to the edge of the uniform flow dispersing component.

4. The reaction source supply device according to claim 3, characterized in that: In the radial direction of the uniform flow dispersing component, the aperture of the uniform flow dispersing hole increases gradually from the center of the uniform flow dispersing component to the edge of the uniform flow dispersing component.

5. The reaction source supply device according to claim 2, characterized in that: The multiple flow-dispersing holes are divided into multiple flow-dispersing hole groups, each of which includes multiple flow-dispersing holes. The multiple flow-dispersing hole groups are spaced apart in the circumferential direction of the flow-dispersing component, and the multiple flow-dispersing holes in each flow-dispersing hole group are spaced apart in the radial direction of the flow-dispersing component.

6. The reaction source supply device according to claim 1, characterized in that: The radial dimension of the uniform flow dispersion component is greater than the radial dimension of the carrier gas outlet.

7. The reaction source supply device according to claim 1, characterized in that: The reaction source supply device further includes a first filter component, which is disposed in the containing component and is higher than the uniform flow dispersion component, and is used for filtering bubbles in the liquid reaction source.

8. The reaction source supply device according to claim 7, characterized in that: The first filter component is provided with a plurality of first filter holes, and the plurality of first filter holes are arranged at intervals in a radial direction of the first filter component.

9. The reaction source supply device according to claim 1, characterized in that: The reaction source supply device also includes a reaction medium conveying component and a second filtering component. The containing component is connected to the reaction chamber through the reaction medium conveying component, and the reaction medium inlet of the reaction medium conveying component is used to allow the carrier gas carrying the liquid reaction source vapor in the containing component to enter the reaction medium conveying component. The second filtering component is arranged at the reaction medium inlet to filter the bubbles flowing from the containing component to the reaction medium inlet.

10. The reaction source supply device according to claim 1, characterized in that: The reaction source supply device further includes a purge gas delivery component, the purge gas delivery component is communicated with the accommodating component, and the purge gas outlet is used to discharge the purge gas in the purge gas delivery component.