Humidity sensitive capacitor and humidity measuring device
By introducing a heating layer into the humidity-sensitive capacitor and optimizing the substrate structure, the problems of slow dehumidification and device failure in high-humidity environments are solved, and faster moisture evaporation and longer service life are achieved.
Patent Information
- Application Number
- CN202420950457.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-06
- Publication Date
- 2025-02-25
- Estimated Expiration
- 2034-05-06
AI Technical Summary
Existing moisture-sensitive capacitors are slow to dehumidify when the ambient humidity is high, and there is a risk of device failure, making it difficult to use in condensation or icing places.
A moisture-sensitive capacitor is designed, including a substrate, a heating layer, an insulating layer, a first electrode layer, a moisture-sensitive dielectric layer and a second electrode layer. By forming a heating layer on the top surface of the substrate, an evaporation of moisture in the moisture-sensitive dielectric layer is accelerated. Thin the thickness of the substrate to enhance heat dissipation capability.
The evaporation rate of moisture in the moisture-sensitive dielectric layer is accelerated, the service life of the moisture-sensitive capacitor is extended, the device damage is avoided, and the reliability of use in high humidity environments is improved.
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Figure CN222529274U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of integrated circuits, and in particular to a humidity-sensitive capacitor and a humidity measuring device. Background Art
[0002] The moisture content in the air not only affects people's sensory comfort, but also directly affects human health, product quality control, medical care, etc. Polymer humidity-sensitive capacitive sensors are generally made of polymer film capacitors. When the ambient humidity changes, the dielectric constant of the humidity-sensitive capacitive sensor changes, causing its capacitance to change. The humidity of the air can be measured through the corresponding relationship between the capacitance change and the humidity.
[0003] However, in the case of high ambient humidity, the humidity-sensitive capacitors currently on the market dehumidify relatively slowly and there is a risk of device failure. Therefore, it is difficult to use humidity-sensitive capacitor sensors in situations where condensation or icing occurs. Utility Model Content
[0004] Based on this, it is necessary to provide a humidity-sensitive capacitor and a humidity measuring device to address the problem of slow dehumidification of humidity-sensitive capacitors in the prior art.
[0005] In order to achieve the above-mentioned object, on the one hand, the present application provides a humidity-sensitive capacitor, comprising a substrate, and a heating layer, an insulating layer, a first electrode layer, a humidity-sensitive dielectric layer and a second electrode layer, which are located on the substrate and sequentially distributed in a direction perpendicular to the top surface of the substrate;
[0006] The bottom surface of the substrate includes a groove, and the orthographic projection of the heating layer on the top surface of the substrate is located within the orthographic projection of the groove on the top surface of the substrate; and the insulating layer at least covers the heating layer.
[0007] In one embodiment, the first electrode layer includes: a first strip structure and a plurality of second strip structures; wherein the plurality of second strip structures extend along a first direction and are arranged at intervals along a second direction; the first strip structure is located on one side of the plurality of second strip structures in the first direction, and the first strip structure is connected to the plurality of second strip structures; wherein the first direction intersects with the second direction;
[0008] The second electrode layer comprises: a third strip structure and a plurality of fourth strip structures; the plurality of fourth strip structures extend along the first direction and are arranged at intervals along the second direction; the third strip structure is located on the other side of the plurality of fourth strip structures in the first direction, and the third strip structure is connected to the plurality of fourth strip structures;
[0009] The plurality of second strip-shaped structures and the plurality of fourth strip-shaped structures are alternately arranged along the second direction; there is a gap between the second strip-shaped structure and the third strip-shaped structure, and there is a gap between the fourth strip-shaped structure and the first strip-shaped structure.
[0010] In one embodiment, the humidity-sensitive medium layer at least fills the spaces between the first strip-shaped structure, the second strip-shaped structure, the third strip-shaped structure, and the fourth strip-shaped structure.
[0011] In one embodiment, the width of the first strip structure, the second strip structure, the third strip structure, and the fourth strip structure are all 1 micron to 5 microns.
[0012] In one embodiment, the interval between each of the second strip-shaped structures and the adjacent fourth strip-shaped structures is 1 micrometer to 5 micrometers.
[0013] In one of the embodiments, the first electrode layer and the second electrode layer are stacked in sequence along a direction perpendicular to the top surface of the substrate; the humidity-sensitive medium layer is located between the first electrode layer and the second electrode layer; the orthographic projection of the second electrode layer on the top surface of the substrate is located within the orthographic projection of the humidity-sensitive medium layer on the top surface of the substrate, and the orthographic projection of the humidity-sensitive medium layer on the top surface of the substrate is located within the orthographic projection of the first electrode layer on the top surface of the substrate.
[0014] In one embodiment, the second electrode layer includes a plurality of hole structures arranged in an interval array; the hole structures penetrate the second electrode layer.
[0015] In one embodiment, the humidity sensitive capacitor further includes:
[0016] The isolation layer is located between the substrate and the heating layer.
[0017] In one embodiment, the humidity sensitive capacitor includes at least one of the following features:
[0018] The thickness of the heating layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 1 micrometer;
[0019] The thickness of the insulating layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 3 micrometers;
[0020] The thickness of the first electrode layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 2 micrometers;
[0021] The thickness of the second electrode layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 2 micrometers;
[0022] The thickness of the humidity sensitive medium layer in a direction perpendicular to the top surface of the substrate is 0.2 micrometers to 15 micrometers.
[0023] In a second aspect, the present application further provides a humidity measuring device, comprising: a control chip and a humidity-sensitive capacitor as described in any one of the embodiments of the present application; wherein the control chip is connected to the humidity-sensitive capacitor.
[0024] The humidity-sensitive capacitor and humidity measuring device of the present application have the following beneficial effects:
[0025] The humidity-sensitive capacitor of the present application includes: a substrate, and a heating layer, an insulating layer, a first electrode layer, a humidity-sensitive dielectric layer, and a second electrode layer, which are located on the substrate and distributed in sequence along a direction perpendicular to the top surface of the substrate; wherein the bottom surface of the substrate includes a groove, and the orthographic projection of the heating layer on the top surface of the substrate is located within the orthographic projection of the groove on the top surface of the substrate; and the insulating layer at least covers the heating layer. The present application heats the first electrode layer, the humidity-sensitive dielectric layer, and the second electrode layer by forming a heating layer on the top surface of the substrate, thereby accelerating the evaporation rate of water in the humidity-sensitive dielectric layer, and making the bottom surface of the substrate include a groove, and the orthographic projection of the heating layer on the top surface of the substrate is located within the orthographic projection of the groove on the top surface of the substrate, thereby reducing the thickness of the substrate in the area in contact with the heating layer, enhancing the heat dissipation capacity of the film layer in contact with the heating layer, and thereby slowing down the heating rate of the remaining film layers of the humidity-sensitive capacitor while increasing the evaporation rate of water in the humidity-sensitive dielectric layer, thereby avoiding damage to the device and extending the service life of the humidity-sensitive capacitor.
[0026] The humidity measuring device of the present application comprises a control chip and a humidity-sensitive capacitor as described in any one of the embodiments of the present application; wherein the control chip is connected to the humidity-sensitive capacitor. By connecting the control chip and the humidity-sensitive capacitor, the humidity-sensitive capacitor can perform functions such as humidity measurement, heating and dehumidification when receiving a control signal from the control chip, thereby improving the intelligence of the humidity measuring device. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0028] Figure 1 is a schematic structural diagram of a humidity-sensitive capacitor provided in an embodiment;
[0029] Figure 2 A schematic diagram of the structure of a humidity-sensitive capacitor provided in another embodiment;
[0030] Figure 3A schematic diagram of the structure of a first electrode layer and a second electrode layer of a humidity sensitive capacitor provided in an embodiment;
[0031] Figure 4 A schematic diagram of the structure of a humidity-sensitive capacitor provided in another embodiment;
[0032] Figure 5 A schematic diagram of the structure of a humidity-sensitive capacitor provided in another embodiment;
[0033] Figure 6 is a structural schematic diagram of a humidity measuring device provided in an embodiment;
[0034] Figure 7 It is a structural schematic diagram of a humidity measuring device provided in another embodiment;
[0035] Figure 8 It is a structural schematic diagram of a humidity measuring device provided in another embodiment;
[0036] Fig. 9 It is a schematic structural diagram of a humidity measuring device provided in another embodiment.
[0037] Description of reference numerals:
[0038] 10. substrate; 20. heating layer; 30. insulating layer; 40. first electrode layer; 401. first strip structure; 402. second strip structure; 50. humidity-sensitive dielectric layer; 60. second electrode layer; 601. third strip structure; 602. fourth strip structure; 70. groove; 80. isolation layer; 90. hole structure; 100. humidity-sensitive capacitor; 101. connecting pin; 200. control chip; 300. carrier board; 400. gasket; 500. connecting layer; 600. plastic layer; 700. metal casing. DETAILED DESCRIPTION
[0039] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.
[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.
[0041] It should be understood that when an element or layer is referred to as being "on, adjacent to, connected to or coupled to other elements or layers, it may be directly on, adjacent to, connected to or coupled to other elements or layers, or there may be intervening elements or layers. On the contrary, when an element is referred to as being "directly on, directly adjacent to, directly connected to or directly coupled to other elements or layers, there are no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, doping type or portion discussed below may be represented as a second element, component, region, layer or portion; for example, the first doping type may be referred to as the second doping type, and similarly, the second doping type may be referred to as the first doping type; the first doping type and the second doping type are different doping types, for example, the first doping type may be P-type and the second doping type may be N-type, or the first doping type may be N-type and the second doping type may be P-type.
[0042] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," and the like may be used herein to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that, in addition to the orientations shown in the figures, spatially relative terms also include different orientations of the device in use and operation. For example, if the device in the accompanying drawings is flipped, an element or feature described as "under other elements" or "under it" or "under it" will be oriented as being "above" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations), and the spatial descriptors used herein are interpreted accordingly.
[0043] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.
[0044] In one embodiment, please refer to Figure 1 The present application provides a humidity-sensitive capacitor, comprising: a substrate 10, and a heating layer 20, an insulating layer 30, a first electrode layer 40, a humidity-sensitive medium layer 50 and a second electrode layer 60 located on the substrate 10 and distributed in sequence along a direction perpendicular to the top surface of the substrate; wherein the bottom surface of the substrate 10 comprises a groove 70, and the orthographic projection of the heating layer 20 on the top surface of the substrate is located within the orthographic projection of the groove 70 on the top surface of the substrate; the insulating layer 30 at least covers the heating layer 20.
[0045] As an example, the heating layer 20, the insulating layer 30, the first electrode layer 40, the humidity-sensitive dielectric layer 50, and the second electrode layer 60 may be stacked in sequence along a direction perpendicular to the substrate 10, wherein the patterns of the heating layer 20, the insulating layer 30, the first electrode layer 40, the humidity-sensitive dielectric layer 50, and the second electrode layer 60 may be the same or different; or, some of the film layers of the heating layer 20, the insulating layer 30, the first electrode layer 40, the humidity-sensitive dielectric layer 50, and the second electrode layer 60 may be stacked in sequence along a direction perpendicular to the top surface of the substrate, and some of the film layers may be horizontally distributed in a direction parallel to the top surface of the substrate, and the humidity-sensitive dielectric layer 50 is located between the first electrode layer 40 and the second electrode layer 60.
[0046] As an example, the shape of the orthographic projection of the groove 70 on the top surface of the substrate may be a rectangle, a circle, or a parallelogram, etc. The area of the orthographic projection of the heating layer 20 on the top surface of the substrate may be less than or equal to the area of the orthographic projection of the groove 70 on the top surface of the substrate. The depth of the groove 70 along the direction perpendicular to the top surface of the substrate is less than the thickness of the substrate 10 along the direction perpendicular to the top surface of the substrate.
[0047] As an example, the substrate 10 can be made of semiconductor material, insulating material, conductor material or any combination thereof. The substrate 10 can be a single-layer structure or a multi-layer structure. For example, the substrate 10 can be a silicon (Si) substrate, a silicon germanium (SiGe) substrate, a silicon germanium carbon (SiGeC) substrate, a silicon carbide (SiC) substrate, a gallium arsenide (GaAs) substrate, an indium arsenide (InAs) substrate, an indium phosphide (InP) substrate or other III / V semiconductor substrates or II / VI semiconductor substrates. Alternatively, for example, the substrate 10 can be a layered substrate including Si / SiGe, Si / SiC, silicon on insulator (SOI) or silicon germanium on insulator. Therefore, the type of substrate 10 should not limit the scope of protection of the present disclosure.
[0048] As an example, the material of the insulating layer 30 may include: a silicon oxide layer (SiO 2 ), a silicon nitride layer (Si 3 N 4 ), polyimide (PI), a photoresist, or a silicon oxynitride layer (SiON), etc.
[0049] As an example, the material of the heating layer 20 includes metal materials, such as one or more of metal gold, metal platinum, metal tantalum, metal tungsten, metal iridium, metal ruthenium, metal nickel and their alloys, doped single crystal silicon mixtures, doped polycrystalline silicon mixtures, and metal silicides.
[0050] As an example, the material of the first electrode layer 40 and the material of the second electrode layer 60 include metal materials such as cobalt (Co), nickel (Ni), titanium (Ti), tungsten (W), tantalum (Ta), tantalum titanium (TaTi), tungsten nitride (WN), copper (Cu), aluminum (Al), platinum (Pt), and gold (Au). Specifically, the material of the first electrode layer 40 may include gold, and the material of the second electrode layer 60 may include platinum.
[0051] As an example, the material of the moisture sensitive medium layer 50 may include polystyrene, polyimide, cellulose acetate, polysulfone, polyvinylbenzene, plasma polymerized polyethylene, linear cross-linked plasma polymerized polymethyl methacrylate (PMMA), a cross-linked copolymer of methyl methacrylate (MMA) and 2-hydroxyethyl methacrylate (HEMA), silicone resin, and the like.
[0052] In the above embodiment, the humidity-sensitive capacitor includes: a substrate 10, and a heating layer 20, an insulating layer 30, a first electrode layer 40, a humidity-sensitive medium layer 50 and a second electrode layer 60 located on the substrate 10 and distributed in sequence along a direction perpendicular to the top surface of the substrate; wherein, the bottom surface of the substrate 10 includes a groove 70, and the orthographic projection of the heating layer 20 on the top surface of the substrate is located within the orthographic projection of the groove 70 on the top surface of the substrate; the insulating layer 30 at least covers the heating layer 20. The present application forms a heating layer 20 on the top surface of the substrate, thereby heating the first electrode layer 40, the humidity-sensitive dielectric layer 50, and the second electrode layer 60, accelerating the evaporation rate of water in the humidity-sensitive dielectric layer 50, and making the bottom surface of the substrate 10 include a groove 70, and the orthographic projection of the heating layer 20 on the top surface of the substrate is located within the orthographic projection of the groove 70 on the top surface of the substrate, thereby reducing the thickness of the substrate 10 in the area in contact with the heating layer 20, enhancing the heat dissipation capacity of the film layer in contact with the heating layer 20, and further increasing the evaporation rate of water in the humidity-sensitive dielectric layer 50 while slowing down the heating rate of the remaining film layers of the humidity-sensitive capacitor, avoiding damage to the device and extending the service life of the humidity-sensitive capacitor.
[0053] In one embodiment, please refer to Figure 2 and Figure 3, the first electrode layer 40 includes: a first strip structure 401 and a plurality of second strip structures 402; wherein the plurality of second strip structures 402 extend along the first direction and are arranged at intervals along the second direction; the first strip structure 401 is located on one side of the plurality of second strip structures 402 in the first direction, and the first strip structure is connected to the plurality of second strip structures; wherein the first direction intersects with the second direction; the second electrode layer 60 includes: a third strip structure 601 and a plurality of fourth strip structures 602; the plurality of fourth strip structures 602 extend along the first direction and are arranged at intervals along the second direction; the third strip structure 601 is located on the other side of the plurality of fourth strip structures 602 in the first direction, and the third strip structure 601 is connected to the plurality of fourth strip structures 602; wherein the plurality of second strip structures 402 and the plurality of fourth strip structures 602 are alternately arranged at intervals along the second direction; there is an interval between the second strip structure 402 and the third strip structure 601, and there is an interval between the fourth strip structure 602 and the first strip structure 401.
[0054] The first direction intersects with the second direction. As an example, the first direction may be a direction parallel to the X-axis direction, the second direction may be a direction parallel to the Y-axis direction, and the direction perpendicular to the top surface of the substrate may be a direction parallel to the Z-axis.
[0055] In one embodiment, the widths of the first strip structure, the second strip structure, the third strip structure, and the fourth strip structure are all 1 micrometer to 5 micrometers.
[0056] As an example, the width of the first strip structure in the first direction may be 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, etc.; the width of the second strip structure in the second direction may be 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, etc.; the width of the third strip structure in the first direction may be 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, etc.; the width of the fourth strip structure in the second direction may be 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, etc. The thickness of the first strip structure, the second strip structure, the third strip structure, and the fourth strip structure in the direction perpendicular to the top surface of the substrate is 5 microns-100 microns, for example: 5 microns, 15 microns, 30 microns, 45 microns, 60 microns, 75 microns, 80 microns, 90 microns, 100 microns, etc.
[0057] In one embodiment, the interval between each second strip-shaped structure and an adjacent fourth strip-shaped structure is 1 micrometer to 5 micrometers.
[0058] As an example, the interval between the second strip structure and the adjacent fourth strip structure is 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, etc. In addition, the interval between the second strip structure and the third strip structure is 1 micron-5 microns, for example: 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, etc.; the interval between the fourth strip structure and the first strip structure is 1 micron-5 microns, for example: 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, etc.
[0059] In one embodiment, the humidity sensitive medium layer at least fills the spaces between the first strip structure, the second strip structure, the third strip structure, and the fourth strip structure.
[0060] As an example, please refer to Figure 2 The thickness of the moisture-sensitive dielectric layer 50 in the direction perpendicular to the top surface of the substrate is greater than or equal to the thickness of the first strip structure, the second strip structure, the third strip structure, and the fourth strip structure in the direction perpendicular to the top surface of the substrate. The orthographic projections of the first strip structure, the second strip structure, the third strip structure, and the fourth strip structure on the top surface of the substrate are all within the range of the orthographic projection of the moisture-sensitive dielectric layer 50 on the top surface of the substrate.
[0061] In one embodiment, please refer to Figure 4 The first electrode layer 40 and the second electrode layer 60 are stacked in sequence along a direction perpendicular to the top surface of the substrate; the humidity-sensitive dielectric layer 50 is located between the first electrode layer 40 and the second electrode layer 60; the orthographic projection of the second electrode layer 60 on the top surface of the substrate is located within the orthographic projection of the humidity-sensitive dielectric layer 50 on the top surface of the substrate, and the orthographic projection of the humidity-sensitive dielectric layer 50 on the top surface of the substrate is located within the orthographic projection of the first electrode layer 40 on the top surface of the substrate.
[0062] As an example, the area of the orthographic projection of the second electrode layer 60 on the top surface of the substrate is less than or equal to the area of the orthographic projection of the humidity-sensitive medium layer 50 on the top surface of the substrate, and the area of the orthographic projection of the humidity-sensitive medium layer 50 on the top surface of the substrate is less than or equal to the area of the orthographic projection of the first electrode layer 40 on the top surface of the substrate.
[0063] In one embodiment, the second electrode layer includes a plurality of hole structures arranged in an array at intervals; the hole structures penetrate the second electrode layer.
[0064] As an example, see Figure 5 The shape of the orthographic projection of the hole structure 90 on the top surface of the substrate may include various shapes such as circle, rectangle, triangle, etc.
[0065] As an example, the porous structures 90 may be arranged at intervals along the first direction and the second direction, and the intervals between the porous structures 90 are 1 micron to 5 microns, such as 1 micron, 2 microns, 3 microns, 4 microns, 5 microns, etc. The pore size of each porous structure 90 is 5 microns to 50 microns, such as 5 microns, 15 microns, 30 microns, 45 microns, 50 microns, etc.
[0066] In the above embodiment, by forming a plurality of hole structures 90 arranged in an interval array in the second electrode layer 60, the moisture in the humidity-sensitive medium layer 50 can be evaporated better, thereby accelerating the dehumidification speed. At the same time, since the hole structure 90 runs through the second electrode layer 60, the contact area between the humidity-sensitive medium layer 50 and the air in the environment to be detected can be increased, thereby improving the detection accuracy of the humidity-sensitive capacitor.
[0067] In one embodiment, please continue to refer to Figure 5 The humidity sensitive capacitor further includes: an isolation layer 80 ; the isolation layer 80 is located between the substrate 10 and the heating layer 20 .
[0068] As an example, the material of the isolation layer 80 may include a silicon oxide layer (SiO 2 ), a silicon nitride layer (Si 3 N 4 ), polyimide (PI), a photoresist, a silicon oxynitride layer (SiON), or the like.
[0069] In one embodiment, the thickness of the heating layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 1 micrometer.
[0070] As an example, the thickness of the heating layer in a direction perpendicular to the top surface of the substrate is 0.1 micron, 0.2 micron, 0.3 micron, 0.4 micron, 0.5 micron, 0.6 micron, 0.7 micron, 0.8 micron, 0.9 micron, 1.0 micron, etc.
[0071] In one embodiment, the thickness of the insulating layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometers to 3 micrometers.
[0072] As an example, the thickness of the insulating layer in a direction perpendicular to the top surface of the substrate is 0.1 micron, 0.2 micron, 0.4 micron, 0.6 micron, 0.8 micron, 1.0 micron, 1.2 micron, 1.4 micron, 1.6 micron, 1.8 micron, 2.0 micron, 2.2 micron, 2.4 micron, 2.6 micron, 2.8 micron, 3.0 micron, etc.
[0073] In one embodiment, the thickness of the first electrode layer in a direction vertical to the top surface of the substrate is 0.1 micrometers to 2 micrometers.
[0074] As an example, the thickness of the first electrode layer in a direction perpendicular to the top surface of the substrate is 0.1 micron, 0.2 micron, 0.4 micron, 0.6 micron, 0.8 micron, 1.0 micron, 1.2 micron, 1.4 micron, 1.6 micron, 1.8 micron, 2.0 micron, etc.
[0075] In one embodiment, the thickness of the second electrode layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometers to 2 micrometers.
[0076] As an example, the thickness of the second electrode layer in a direction perpendicular to the top surface of the substrate is 0.1 micron, 0.2 micron, 0.4 micron, 0.6 micron, 0.8 micron, 1.0 micron, 1.2 micron, 1.4 micron, 1.6 micron, 1.8 micron, 2.0 micron, etc.
[0077] In one embodiment, the thickness of the moisture sensitive medium layer in a direction perpendicular to the top surface of the substrate is 0.2 micrometers to 15 micrometers.
[0078] As an example, the thickness of the moisture-sensitive dielectric layer in a direction perpendicular to the top surface of the substrate is 0.2 microns, 0.5 microns, 1.0 microns, 3.0 microns, 3.5 microns, 4.0 microns, 4.5 microns, 5.0 microns, 5.5 microns, 6.0 microns, 6.5 microns, 7.0 microns, 7.5 microns, 8.0 microns, 8.5 microns, 9.0 microns, 9.5 microns, 10.0 microns, 10.5 microns, 11.0 microns, 11.5 microns, 12.0 microns, 12.5 microns, 13.0 microns, 13.5 microns, 14.0 microns, 14.5 microns, 15.0 microns, etc.
[0079] The present application also provides a humidity measuring device, comprising: a control chip and a humidity-sensitive capacitor according to any one of the embodiments of the present application; wherein the control chip is connected to the humidity-sensitive capacitor.
[0080] As an example, see Figure 6 and Figure 7 When packaging the control chip 200 and the humidity-sensitive capacitor 100, a flat or stacked distribution method can be adopted. In the flat process, the connection pin 101 of the control chip 200 is directly connected to the connection pin 101 of the humidity-sensitive capacitor 100; in the stacking process, the control chip 200 is connected to the carrier 300 through the connection layer 500, and then connected to the humidity-sensitive capacitor 100 through the connection layer 500, the gasket 400, and the connection layer 400, the connection pin 101 of the humidity-sensitive capacitor 100 is connected to the connection pin 101 of the carrier 300, and the connection pin 101 of the control chip 200 is connected to the connection pin 101 of the carrier 300, so that the control chip 200 is connected to the humidity-sensitive capacitor 100.
[0081] As an example, see Figure 8The humidity measuring device may further include: a plastic packaging layer 600 surrounding the control chip 200 and the humidity-sensitive capacitor 100 ; wherein the plastic packaging layer 600 also includes an opening exposing the humidity-sensitive capacitor 100 .
[0082] As an example, see Fig. 9 The humidity measuring device may further include: a metal shell 700 , the metal shell 700 is used to accommodate the control chip 200 and the humidity-sensitive capacitor 100 ; wherein the metal shell 700 also includes an opening exposing the humidity-sensitive capacitor 100 .
[0083] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features of the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0084] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be construed as limiting the scope of the patent application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the patent application shall be subject to the attached claims.
Claims
1. A humidity sensitive capacitor, characterized in that: It comprises a substrate, and a heating layer, an insulating layer, a first electrode layer, a humidity-sensitive medium layer and a second electrode layer which are located on the substrate and are sequentially distributed in a direction perpendicular to the top surface of the substrate; The bottom surface of the substrate includes a groove, and the orthographic projection of the heating layer on the top surface of the substrate is located within the orthographic projection of the groove on the top surface of the substrate; and the insulating layer at least covers the heating layer.
2. The humidity sensitive capacitor according to claim 1, characterized in that: The first electrode layer includes: a first strip structure and a plurality of second strip structures; wherein the plurality of second strip structures extend along a first direction and are arranged at intervals along a second direction; the first strip structure is located on one side of the plurality of second strip structures in the first direction, and the first strip structure is connected to the plurality of second strip structures; wherein the first direction intersects with the second direction; The second electrode layer comprises: a third strip structure and a plurality of fourth strip structures; the plurality of fourth strip structures extend along the first direction and are arranged at intervals along the second direction; the third strip structure is located on the other side of the plurality of fourth strip structures in the first direction, and the third strip structure is connected to the plurality of fourth strip structures; The plurality of second strip-shaped structures and the plurality of fourth strip-shaped structures are alternately arranged along the second direction; there is a gap between the second strip-shaped structure and the third strip-shaped structure, and there is a gap between the fourth strip-shaped structure and the first strip-shaped structure.
3. The humidity sensitive capacitor according to claim 2, characterized in that: The humidity-sensitive medium layer at least fills the spaces between the first strip-shaped structure, the second strip-shaped structure, the third strip-shaped structure, and the fourth strip-shaped structure.
4. The humidity sensitive capacitor according to claim 2, characterized in that: The width of the first strip structure, the second strip structure, the third strip structure, and the fourth strip structure are all 1 micrometer to 5 micrometers.
5. The humidity sensitive capacitor according to claim 2, characterized in that: The interval between each of the second strip-shaped structures and the adjacent fourth strip-shaped structures is 1 micrometer to 5 micrometers.
6. The humidity sensitive capacitor according to claim 1, characterized in that: The first electrode layer and the second electrode layer are stacked in sequence along a direction perpendicular to the top surface of the substrate; the humidity-sensitive medium layer is located between the first electrode layer and the second electrode layer; the orthographic projection of the second electrode layer on the top surface of the substrate is located within the orthographic projection of the humidity-sensitive medium layer on the top surface of the substrate, and the orthographic projection of the humidity-sensitive medium layer on the top surface of the substrate is located within the orthographic projection of the first electrode layer on the top surface of the substrate.
7. The humidity sensitive capacitor according to claim 6, characterized in that: The second electrode layer includes a plurality of hole structures arranged in an array at intervals; the hole structures penetrate the second electrode layer.
8. The humidity-sensitive capacitor according to any one of claims 1 to 7, characterized in that: The humidity sensitive capacitor also includes: The isolation layer is located between the substrate and the heating layer.
9. The humidity sensitive capacitor according to any one of claims 1 to 7, characterized in that: The humidity sensitive capacitor includes at least one of the following features: The thickness of the heating layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 1 micrometer; The thickness of the insulating layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 3 micrometers; The thickness of the first electrode layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 2 micrometers; The thickness of the second electrode layer in a direction perpendicular to the top surface of the substrate is 0.1 micrometer to 2 micrometers; The thickness of the humidity sensitive medium layer in a direction perpendicular to the top surface of the substrate is 0.2 micrometers to 15 micrometers.
10. A humidity measuring device, characterized in that: include: A control chip and the humidity-sensitive capacitor according to any one of claims 1 to 9; wherein the control chip is connected to the humidity-sensitive capacitor.