Silicon carbide power amplification circuit integrated module and power amplification circuit

Abstract

The utility model discloses a silicon carbide power amplification circuit integrated module and a power amplification circuit, the silicon carbide power amplification circuit integrated module comprises a ceramic substrate and a silicon carbide power amplification device, one side of the ceramic substrate is provided with a metal coating layer, and a conductive circuit is processed and formed on the metal coating layer; and a bonding pad of the silicon carbide power amplification device is electrically connected with the conductive circuit. Through the mode, the power amplification circuit integrated module can be used in a higher-voltage and higher-frequency working state, the efficiency of the power amplification circuit is improved, the energy loss of the circuit is reduced, heat generation is reduced, higher integration level and compatibility of devices are realized, the space occupied by the power amplification circuit on a circuit board is reduced, and the power amplification circuit integrated module is convenient to use. And the production cost is reduced.

Description

Technical Field

[0001] The present application relates to the field of integrated circuits, and in particular to a silicon carbide power amplifier circuit integrated module and a power amplifier circuit. Background Art

[0002] In existing power amplifier circuits, single-tube packaged devices are usually used to build circuits. Single-tube packaged devices occupy a large space in the circuit board, reducing the space utilization rate of the circuit board. The existing power chip types are mainly silicon-based power chips, which cannot withstand high-voltage and high-temperature working environments and cannot be used in high-frequency circuits.

[0003] Therefore, there is a need for a power amplifier circuit that can reduce the space occupied by packaged devices in a circuit board, support a high-voltage and high-temperature working environment, and can be applied to high-frequency circuits. Utility Model Content

[0004] The present application mainly provides a silicon carbide power amplifier circuit integrated module and a power amplifier circuit to solve the problem that the device occupies a large circuit board space and the chip does not support a high-frequency circuit environment.

[0005] In order to solve the above technical problems, a technical solution adopted in the present application is: to provide a silicon carbide power amplifier circuit integrated module, comprising: a ceramic substrate, a metal coating layer is provided on one side of the ceramic substrate, and a conductive circuit is formed on the metal coating layer; a silicon carbide power amplifier device, and the pad of the silicon carbide power amplifier device is electrically connected to the conductive circuit.

[0006] In some embodiments, a plurality of pins are connected to the ceramic substrate, and the pins are electrically connected to corresponding pads of the silicon carbide power amplifier device through the conductive lines.

[0007] In some embodiments, the silicon carbide power amplifier device is an inverting power amplifier or a complementary symmetrical power amplifier.

[0008] In some embodiments, the inverting power amplifier includes a first transistor, a second transistor and a third transistor; the base of the first transistor is connected to a first pin, the emitter of the first transistor is connected to the base of the second transistor, the base of the second transistor is also connected to the second pin, the collector of the first transistor is connected to the base of the third transistor, and the base of the third transistor is also connected to the third pin.

[0009] The collector of the second transistor is connected to the fourth pin, the emitter of the second transistor is connected to the emitter of the third transistor, and the emitter of the third transistor is also connected to the fifth pin; the collector of the third transistor is connected to the sixth pin.

[0010] In some embodiments, the complementary symmetrical power amplifier includes a first transistor, a second transistor, a third transistor, a first diode and a second diode; the base of the first transistor is connected to a first pin, the emitter of the first transistor is connected to a second pin, the collector of the first transistor is connected to the cathode of the first diode, and the collector of the first transistor is also connected to the base of the second transistor.

[0011] The collector of the second transistor is connected to the third pin, the emitter of the second transistor is connected to the fourth pin, and the emitter of the second transistor is also connected to the emitter of the third transistor; the collector of the third transistor is connected to the fifth pin, the base of the third transistor is connected to the sixth pin, and the base of the third transistor is also connected to the anode of the second diode, and the anode of the first diode is connected to the cathode of the second diode.

[0012] In some embodiments, the complementary symmetrical power amplifier includes: a first transistor, a second transistor, a third transistor, a first diode and a second diode; the base of the first transistor is connected to the first pin, the emitter of the first transistor is connected to the second pin, the emitter of the first transistor is also connected to the collector of the second transistor, the collector of the first transistor is connected to the cathode of the first diode, and the collector of the first transistor is also connected to the anode of the second diode.

[0013] The emitter of the second transistor is connected to the third pin, and the emitter of the second transistor is also connected to the emitter of the third transistor. The base of the second transistor is connected to the fourth pin, and the base of the second transistor is also connected to the cathode of the second diode. The collector of the third transistor is connected to the fifth pin, and the base of the third transistor is connected to the sixth pin, and the base of the third transistor is also connected to the anode of the first diode.

[0014] In some embodiments, the complementary symmetrical power amplifier includes: a first transistor, a first power composite tube, a second power composite tube, a first diode and a second diode; the base of the first transistor is connected to the first pin, the collector of the first transistor is connected to the base of the first power composite tube, the collector of the first transistor is also connected to the cathode of the first diode, the emitter of the first transistor is connected to the collector of the first power composite tube, and the emitter of the first transistor is also connected to the second pin.

[0015] The emitter of the first power composite tube is connected to the third pin, the emitter of the first power composite tube is also connected to the emitter of the second power composite tube, the collector of the second power composite tube is connected to the fourth pin, and the base of the second power composite tube is connected to the fifth pin; the anode of the first diode is connected to the cathode of the second diode, and the anode of the second diode is connected to the sixth pin.

[0016] In some embodiments, the first power compound tube includes a second transistor and a third transistor, and the second power compound tube includes a fourth transistor and a fifth transistor; the base of the second transistor is the base of the first power compound tube, the collector is connected to the base of the third transistor, the emitter is connected to the collector of the third transistor, the emitter of the second transistor and the collector of the third transistor together serve as the emitter of the first power compound tube, and the emitter of the third transistor serves as the collector of the first power compound tube.

[0017] The base of the fourth transistor serves as the base of the second power compound tube, the collector is connected to the collector of the fifth transistor, the collector of the fourth transistor and the collector of the fifth transistor serve together as the collector of the second power compound tube, the emitter of the fourth transistor is connected to the base of the fifth transistor, and the emitter of the fifth transistor serves as the emitter of the second power compound tube.

[0018] In some embodiments, the silicon carbide power amplifier circuit module adopts a bridge package.

[0019] In order to solve the above technical problems, another technical solution provided by the present application is a power amplifier circuit, characterized in that the power amplifier circuit includes the silicon carbide power amplifier circuit integrated module as mentioned above.

[0020] The beneficial effects of the present application are as follows: Different from the prior art, the present application discloses a silicon carbide power amplifier circuit integrated module, including a ceramic substrate and a silicon carbide power amplifier device; by virtue of the characteristics of silicon carbide material having strong pressure resistance, high electron saturation drift rate and high thermal conductivity, the silicon carbide chip can be used under higher voltage and high frequency working conditions, thereby improving the efficiency of the power amplifier circuit, reducing circuit energy loss and reducing heat generation; by integrating and packaging the silicon carbide power amplifier device into a module, the number of single tubes used is reduced, a higher degree of integration and compatibility of the device is achieved, and space utilization is improved; the ceramic substrate has good heat dissipation and is light in weight, thereby optimizing the volume and weight of the silicon carbide power amplifier circuit module; the use of a metal-clad ceramic substrate also enables a better heat dissipation effect for the entire module. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work, among which:

[0022] Figure 1 This is a structural schematic diagram of a first embodiment of a silicon carbide power amplifier circuit integrated module provided by the present application;

[0023] Figure 2 This is a circuit structure diagram of a first embodiment of a silicon carbide power amplifier device provided by the present application;

[0024] Figure 3 This is a circuit structure diagram of a second embodiment of a silicon carbide power amplifier device provided by the present application;

[0025] Figure 4 This is a schematic diagram of the circuit structure of a third embodiment of a silicon carbide power amplifier device provided by the present application;

[0026] Figure 5 This is a circuit structure diagram of a fourth embodiment of a silicon carbide power amplifier device provided by the present application;

[0027] Figure 6 yes Figure 5 A schematic diagram of the circuit structure of an embodiment of a silicon carbide power amplifier device is shown. DETAILED DESCRIPTION

[0028] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0029] The terms "first", "second", "third" in the embodiments of the present application are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Thus, the features defined as "first", "second", "third" can expressly or implicitly include at least one of the features. In the description of the present application, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device comprising a series of steps or units is not limited to the listed steps or units, but optionally also includes steps or units that are not listed, or optionally also includes other steps or units inherent to these processes, methods, products or devices.

[0030] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0031] See also Figure 1 , Figure 1 This is a schematic diagram of the structure of a first embodiment of a silicon carbide power amplifier circuit integrated module provided by the present application, and the silicon carbide power amplifier circuit integrated module includes: a ceramic substrate, a metal coating layer is provided on one side of the ceramic substrate, and a conductive circuit is formed on the metal coating layer; a silicon carbide power amplifier device, and the pad of the silicon carbide power amplifier device is electrically connected to the conductive circuit, wherein the silicon carbide power amplifier device is an inverted power amplifier type or a complementary symmetrical power amplifier type. Different types of circuit structures enable the power amplifier circuit to play a suitable role in different circuit environments, broadening the application range of the power amplifier circuit module.

[0032] The gray part in the figure is a silicon carbide power amplifier device 001 covered with packaging material, the black flat plate with holes attached to the gray part is a ceramic substrate 002, and the six conductors extending under the silicon carbide power amplifier device and the ceramic substrate are pins 003 of the silicon carbide power amplifier circuit integrated module.

[0033] A plurality of pins are connected to the ceramic substrate 002, and the pins are electrically connected to the corresponding pads of the silicon carbide power amplifier device 001 through conductive lines. The ceramic sheet becomes a ceramic that can be directly bonded after being coated with metal on one side, wherein the required circuit is processed on the front side, and the pads on the upper surface of the chip are electrically connected to the metal layer or metal pins on the ceramic through metal wires, metal strips or metal strips.

[0034] Ceramic substrates have high thermal conductivity. Using ceramic substrates can significantly improve the insulation and heat dissipation effects of the module, thereby enhancing the stability and reliability of the device. Such high thermal conductivity ceramic materials include but are not limited to aluminum nitride, aluminum oxide, silicon nitride, etc.

[0035] Silicon carbide power amplifier devices are made of silicon carbide, a third-generation semiconductor material. Devices made of silicon carbide have the advantages of high temperature resistance, high voltage resistance, high frequency resistance, low loss and anti-noise. In other words, the transistors and diodes included in the silicon carbide power amplifier device are all made of silicon carbide.

[0036] By adopting silicon carbide power devices and utilizing its excellent properties such as high breakdown field strength, wide bandgap, high thermal conductivity, high melting point, and high electron saturation drift rate, silicon carbide modules can be used in high temperature, high voltage, and high frequency application environments, and can increase the operating voltage, reduce the operating current, and reduce conduction losses, thereby achieving the effect of improving conversion efficiency.

[0037] The silicon carbide power amplifier circuit integrated module adopts a bridge package.

[0038] By packaging the power amplifier circuit in a single device in an integrated packaging form, the size of the device is reduced, the space occupied by the power amplifier circuit on the circuit board is greatly reduced, the comprehensive parasitic parameters of the original multiple discrete devices at the PCB board level are reduced, the electromagnetic / switching noise is reduced, the EMI performance (the electromagnetic radiation generated by electronic equipment at work and the ability to resist external electromagnetic fields) is improved, the system efficiency is improved, and the electrical insulation problem between the chip and the heat sink / heat dissipation base is solved.

[0039] The use of ceramic heat sinks increases the heat dissipation efficiency of the device, making the device more adaptable to high-frequency working environments; silicon carbide material has a large band width, fast conversion speed, and is resistant to high voltage and high temperature, enabling silicon carbide chips to support high-voltage and high-temperature working environments, improving adaptability and power density.

[0040] The design of six-pin bridge packaging of silicon carbide power devices not only retains the advantages of silicon carbide materials, but also reduces production costs and achieves higher device integration and more functions.

[0041] Comprehensive parasitic parameters refer to the integration of parasitic parameters (such as wiring capacitance, wiring resistance, etc.) of components (such as transistors, resistors, capacitors, etc.) in an integrated circuit into an equivalent circuit model in order to more accurately describe the behavior of the integrated circuit.

[0042] Embodiment 1

[0043] See also Figure 2 , Figure 21 is a circuit structure diagram of a first embodiment of a silicon carbide power amplifier device provided in the present application. In the figure, the silicon carbide power amplifier circuit 100 includes an inverting power amplifier type silicon carbide power amplifier device 110 and an external circuit.

[0044] The inverted power amplifier is a circuit module that uses transistors to amplify signals. The characteristic of this circuit is that the output signal is opposite to the input signal in phase, so it is called inverted. In this circuit, the input signal is amplified by the amplifier stage and then further amplified by the output stage to produce greater output power.

[0045] The silicon carbide power amplifier device 110 includes a first transistor Q1, a second transistor Q2 and a third transistor Q3; wherein, the base of the first transistor Q1 is connected to the first pin 1, the emitter of the first transistor Q1 is connected to the base of the second transistor Q2, the base of the second transistor is also connected to the second pin 2, the collector of the first transistor Q1 is connected to the base of the third transistor Q3, the base of the third transistor Q3 is also connected to the third pin 3; the collector of the second transistor Q2 is connected to the fourth pin 4, the emitter of the second transistor Q2 is connected to the emitter of the third transistor Q3, the emitter of the third transistor Q3 is also connected to the fifth pin 5; the collector of the third transistor Q3 is connected to the sixth pin 6.

[0046] Optionally, in the external circuit, the signal input terminal IN is connected to the first end of the first resistor R1, and the second end of R1 is connected to the positive electrode of the operational amplifier OPA; the ground terminal is connected to the first end of the second resistor R2, and the second end of R2 is connected to the negative electrode of OPA, and the second end of R2 is also connected to the first end of the third resistor R3, and the second end of R3 is connected to the output end of OPA and the first pin 1 of the silicon carbide power amplifier circuit module 100; OPA is also connected to the low-voltage DC-DC converter LVCC and the low-voltage electronic transmitter LVEE; the output end of OPA is also connected to the first ends of resistors R5 and R6, the second end of resistor R5 is connected to resistor R4, and the second end of resistor R5 is also connected to pin 3; the second end of resistor R6 is connected to pin 2, and the second end of resistor R6 is also connected to resistor R7; the second end of resistor R4 is connected to pin 6, and the second end of resistor R4 is also connected to the high-voltage DC-DC converter HVCC, the second end of resistor R7 is connected to pin 4, and the second end of resistor R7 is also connected to the high-voltage electronic transmitter HVEE. A first end of the resistor RL is connected to the pin 5 , the first end of the resistor RL is also connected to the signal output terminal OUT, and a second end of the resistor RL is connected to the ground terminal.

[0047] Among them, transistors Q1 and Q3 are NPN type silicon carbide bipolar transistors, and Q2 is a PNP type silicon carbide bipolar transistor.

[0048] Optionally, the resistor is a linear resistor with an appropriate resistance, and the pin is a metal conductor.

[0049] The present application uses a silicon carbide power amplifier device 110 and an external circuit to input the electrical signal to be amplified from port IN to the external circuit, and after being processed by the OPA in the external circuit, input it into the silicon carbide power amplifier device 110. Through the structure of the above-mentioned silicon carbide power amplifier device 110, Q2 and Q3 respectively obtain electrical signals with opposite polarities; by selecting R4, R5, R6, and R7 with appropriate resistance values, the electrical signals output by Q1 to the bases of Q2 and Q3 are equal in magnitude, and finally Q2 and Q3 respectively obtain electrical signals of equal magnitude and opposite polarities, Q2 and Q3 are turned on in turn to amplify the negative half cycle and the positive half cycle of the signal, and output the amplified signal from the emitter through pin 5 to the external circuit, and finally synthesize a complete output signal with a phase opposite to the input signal, and the output signal is output from the OUT terminal.

[0050] Embodiment 2

[0051] See also Figure 3 , Figure 3 1 is a schematic structural diagram of a second embodiment of a silicon carbide power amplifier device provided in the present application. In the figure, the silicon carbide power amplifier circuit 200 includes a complementary symmetrical power amplifier type silicon carbide power amplifier device 210 and an external circuit.

[0052] The transistor complementary symmetric power amplifier circuit is a power amplifier circuit composed of complementary symmetric NPN and PNP transistors. The main feature of the complementary symmetric power amplifier circuit is that it can provide symmetrical positive and negative half-cycle signals at the output end, thereby achieving higher power amplification. In this circuit, the NPN and PNP transistors are responsible for amplifying the positive half-cycle and negative half-cycle of the input signal respectively. When the positive half-cycle of the input signal arrives, the NPN transistor is turned on, thereby generating a positive half-cycle output signal; and when the negative half-cycle of the input signal arrives, the PNP transistor is turned on, generating a negative half-cycle output signal.

[0053] The silicon carbide power amplifier device 210 includes a first transistor Q1, a second transistor Q2, a third transistor Q3, a first diode D1, and a second diode D2. The base of the first transistor Q1 is connected to the first pin 1, the emitter of the first transistor Q1 is connected to the second pin 2, the collector of the first transistor Q1 is connected to the cathode of the first diode D1, and the collector of the first transistor Q1 is also connected to the base of the second transistor Q2; the collector of the second transistor Q2 is connected to the third pin 3, the emitter of the second transistor Q2 is connected to the fourth pin 4, and the emitter of the second transistor Q2 is also connected to the emitter of the third transistor Q3; the collector of the third transistor Q3 is connected to the fifth pin 5, the base of the third transistor Q3 is connected to the sixth pin 6, the base of the third transistor Q3 is also connected to the anode of the second diode D2, and the anode of the first diode D1 is connected to the cathode of the second diode D2.

[0054] Optionally, in the external circuit, the signal input terminal IN is connected to the first end of the resistor R1, the signal input terminal IN is also connected to pin 1, and the second end of the resistor R1 is connected to the ground terminal; the first end of the resistor R2 is connected to pin 6, the second end is connected to pin 5, and the second end of the resistor R2 is also connected to the HVCC terminal; the first end of the resistor R3 is connected to pin 1, the second end is connected to pin 3, and the second end of the resistor R3 is also connected to the HVEE terminal; the first end of the resistor RL is connected to pin 4, and the first end of the resistor RL is also connected to the signal output terminal OUT.

[0055] Among them, the transistors Q1 and Q3 are NPN silicon carbide bipolar transistors, Q2 is a PNP silicon carbide bipolar transistor, and the diodes D1 and D2 are silicon carbide Schottky diodes.

[0056] Optionally, the resistor is a linear resistor with an appropriate resistance, and the pin is a metal conductor.

[0057] The present application uses a silicon carbide power amplifier device 210 and an external circuit to input the electrical signal to be amplified from port IN to the external circuit, and then inputs it into the power amplifier circuit module 210 through pin 1. Through the structure of the above-mentioned silicon carbide power amplifier circuit module 210, Q2 and Q3 respectively obtain electrical signals with opposite polarities; by appropriately selecting the resistance values ​​of R2 and R3, the electrical signals output by Q1 to the bases of Q2 and Q3 are equal in magnitude, and finally Q2 and Q3 respectively obtain electrical signals of equal magnitude and opposite polarities. Q2 and Q3 are turned on in turn to amplify the negative half cycle and the positive half cycle of the signal respectively, and output the amplified signal from the emitter through pin 5 to the external circuit, and finally synthesize a complete output signal, and the output signal is output from the OUT terminal.

[0058] Specifically, diodes D1 and D2 are bias circuit elements of transistors Q2 and Q3, and are used to provide the amplifier with a required DC operating point to ensure that the amplifier can work normally during operation, and to minimize the crossover distortion.

[0059] Specifically, the diode D1 connected in series with the external circuit resistor R2 can compensate for the voltage changes of the emitter and base of the transistors Q2 and Q3 due to temperature, so as to stabilize the static operating point of the silicon carbide power amplifier device 210 .

[0060] Embodiment 3

[0061] See also Figure 4 , Figure 4 1 is a schematic structural diagram of a third embodiment of a silicon carbide power amplifier device provided in the present application. In the figure, the silicon carbide power amplifier circuit 300 includes a complementary symmetrical power amplifier type silicon carbide power amplifier device 310 and an external circuit.

[0062] The silicon carbide power amplifier device 310 includes: a first transistor Q1, a second transistor Q2, a third transistor Q3, a first diode D1 and a second diode D2; the base of the first transistor Q1 is connected to the first pin 1, the emitter of the first transistor Q1 is connected to the second pin 2, the emitter of the first transistor Q1 is also connected to the collector of the second transistor Q2, the collector of the first transistor Q1 is connected to the cathode of the first diode D1, and the collector of the first transistor Q1 is also connected to the anode of the second diode D2; the emitter of the second transistor Q2 is connected to the third pin 3, the emitter of the second transistor Q2 is also connected to the emitter of the third transistor Q3, the base of the second transistor Q2 is connected to the fourth pin 4, and the base of the second transistor Q2 is also connected to the cathode of the second diode D2; the collector of the third transistor Q3 is connected to the fifth pin 5, the base of the third transistor Q3 is connected to the sixth pin 6, and the base of the third transistor Q3 is also connected to the anode of the first diode D1.

[0063] Optionally, in the external circuit, the signal input terminal IN is connected to the first end of the resistor R1, the signal input terminal IN is also connected to the first end of the resistor R2, the signal input terminal IN is also connected to the first end of the resistor R5, and the signal input terminal IN is also connected to pin 1; the second end of the resistor R1 is connected to the first end of the resistor R3, the second end of the resistor R1 is also connected to pin 5, the second end of the resistor R1 is also connected to the HVCC terminal, and the second end of the resistor R3 is connected to pin 6; the second end of the resistor R2 is connected to the first end of the resistor R4, the second end of the resistor R2 is also connected to pin 2, and the second end of the resistor R2 is also connected to the HVEE terminal; the second end of the resistor R4 is connected to pin 4, the second end of the resistor R5 is connected to pin 3, and the second end of the resistor R5 is also connected to the signal output terminal OUT.

[0064] Among them, the transistors Q1 and Q3 are NPN silicon carbide bipolar transistors, Q2 is a PNP silicon carbide bipolar transistor, and the diodes D1 and D2 are silicon carbide Schottky diodes.

[0065] Optionally, the resistor is a linear resistor with an appropriate resistance, and the pin is a metal conductor.

[0066] The present application uses a silicon carbide power amplifier device 310 and an external circuit to input the electrical signal to be amplified from port IN to the external circuit, and then inputs it into the silicon carbide power amplifier device 310 through pin 1. Through the structure of the above-mentioned silicon carbide power amplifier device 310, Q2 and Q3 respectively obtain electrical signals with opposite polarities; by appropriately selecting the resistance values ​​of R4 and R3, the electrical signals output by Q1 to the bases of Q2 and Q3 are equal in magnitude, and finally Q2 and Q3 respectively obtain electrical signals of equal magnitude and opposite polarities. Q2 and Q3 are turned on in turn to amplify the negative half cycle and the positive half cycle of the signal respectively, and output the amplified signal from the emitter through pin 5 to the external circuit, and finally synthesize a complete output signal, and the output signal is output from the OUT terminal.

[0067] Embodiment 4

[0068] See also Figure 5 and Figure 6 , Figure 5 1 is a schematic diagram of the structure of a fourth embodiment of a silicon carbide power amplifier device provided in the present application. In the figure, a silicon carbide power amplifier circuit 400 includes a complementary symmetrical power amplifier type silicon carbide power amplifier device 410 and an external circuit.

[0069] Figure 5 In the embodiment, the silicon carbide power amplifier device 410 includes: a first transistor Q1, a first power composite tube M1, a second power composite tube M2, a first diode D1 and a second diode D2; the base of the first transistor Q1 is connected to the first pin 1, the collector is connected to the base of the first power composite tube M1, the collector of the first transistor Q1 is also connected to the cathode of the first diode D1, the emitter of the first transistor Q1 is connected to the collector of the first power composite tube M1, and the emitter of the first transistor Q1 is also connected to the second pin 2; the emitter of the first power composite tube M1 is connected to the third pin 3, the emitter of the first power composite tube M1 is also connected to the emitter of the second power composite tube M2, the collector of the second power composite tube M2 is connected to the fourth pin 4, and the base of the second power composite tube M2 is connected to the fifth pin 5; the anode of the first diode D1 is connected to the cathode of the second diode D2, and the anode of the second diode D2 is connected to the sixth pin 6.

[0070] Optionally, in the external circuit, the signal input terminal IN is connected to the negative electrode of the capacitor C1, the positive electrode of the capacitor C1 is connected to pin 1, the positive electrode of the capacitor C1 is also connected to the first end of the resistor R1, the second end of the resistor R1 is connected to the first end of the resistor R2, the second end of the resistor R1 is also connected to pin 4, the second end of the resistor R1 is also connected to the HVCC terminal, the second end of the resistor R2 is connected to the first end of the resistor R3, the second end of the resistor R2 is also connected to pin 5, and the second end of the resistor R3 is connected to pin 6; the ground terminal is connected to pin 2, the output terminal OUT is connected to pin 3, the output terminal OUT is also connected to the first end of the resistor RL, and the second end of the resistor RL is connected to the ground terminal.

[0071] Among them, the transistor Q1 is an NPN type silicon carbide bipolar transistor, the power compound tube M1 is a PNP power compound tube, the power compound tube M2 is an NPN power compound tube, and the diodes D1 and D2 are silicon carbide Schottky diodes.

[0072] Specifically, a power composite tube refers to a single packaged transistor that integrates NPN and PNP transistors. In a complementary symmetrical power amplifier circuit, a composite tube can be used to build the output stage. The NPN and PNP transistors in the composite tube can be used to amplify the positive and negative half cycles of the input signal, respectively, thereby achieving symmetrical power amplification. The use of composite tubes can simplify circuit design, reduce the number of components, and improve overall reliability and stability.

[0073] Among them, the NPN power compound tube is a device that integrates multiple NPN transistors, and the PNP power compound tube is a device that integrates NPN and PNP transistors. In the fully complementary push-pull output stage, the NPN transistor is responsible for amplifying the positive half cycle of the input signal, while the PNP transistor is responsible for amplifying the negative half cycle of the input signal. This structure can achieve symmetrical amplification of the output signal and can provide higher power output.

[0074] Optionally, the capacitor is a capacitor with an appropriate capacitance value, the resistor is a linear resistor with an appropriate resistance value, and the pin is a metal conductor.

[0075] The present application uses a silicon carbide power amplifier device 410 and an external circuit to input the electrical signal to be amplified from port IN to the external circuit, and then inputs it into the silicon carbide power amplifier device 410 from pin 1 after coupling through capacitor C1. Through the structure of the above-mentioned silicon carbide power amplifier device 410, M1 and M2 respectively obtain electrical signals with opposite polarities; by appropriately selecting the resistance value, the electrical signals output by Q1 to the bases of M1 and M2 are equal in magnitude, and finally M1 and M2 respectively obtain electrical signals of equal magnitude and opposite polarities, and M1 and M2 are turned on in turn to amplify the negative half cycle and the positive half cycle of the signal respectively, and output the amplified signal from the emitter through pin 5 to the external circuit, and finally synthesize a complete output signal, and the output signal is output from the OUT end through pin 3.

[0076] Further, see Figure 6 , Figure 6 yes Figure 5 The schematic diagram of the structure of an embodiment of a silicon carbide power amplifier device is shown, in which the silicon carbide power amplifier circuit 400 includes a complementary symmetrical power amplifier type silicon carbide power amplifier device 411 and an external circuit. The first power composite tube M1 includes a second transistor Q2 and a third transistor Q3; the base of the second transistor Q2 is the base of the first power composite tube M1, the collector of the second transistor Q2 is connected to the base of the third transistor Q3, the emitter of the second transistor Q2 is connected to the collector of the third transistor Q3, the emitter of the second transistor Q2 and the collector of the third transistor Q3 are jointly used as the emitter of the first power composite tube M1, and the emitter of the third transistor Q3 is used as the collector of the first power composite tube M1.

[0077] The second power compound tube M2 includes a fourth transistor Q4 and a fifth transistor Q5; the base of the fourth transistor Q4 serves as the base of the second power compound tube M2, the collector of the fourth transistor Q4 is connected to the collector of the fifth transistor Q5, the collector of the fourth transistor Q4 and the collector of the fifth transistor Q5 serve together as the collector of the second power compound tube M2, the emitter of the fourth transistor Q4 is connected to the base of the fifth transistor Q5, and the emitter of the fifth transistor Q5 serves as the emitter of the second power compound tube M2.

[0078] Among them, transistors Q3, Q4, and Q5 are NPN-type silicon carbide bipolar transistors, and Q2 is a PNP-type silicon carbide bipolar transistor.

[0079] Furthermore, transistors Q2 and Q3 are power amplifier driver tubes in the circuit, which are used to drive the transistors of the output stage. In the power amplifier circuit, the driver stage is responsible for amplifying the input signal to a sufficient amplitude to drive the output stage. The power amplifier driver tube usually needs to have a high current driving capability and frequency response characteristics to ensure that the output stage can quickly and accurately follow the changes of the input signal.

[0080] The present application also provides a power amplifier circuit, which includes the silicon carbide power amplifier circuit integrated module as described above. The power amplifier circuit can be an independent device or module, or a part of a system circuit.

[0081] Different from the prior art, the present application provides a silicon carbide power amplifier circuit integrated module, including a ceramic substrate and a silicon carbide power amplifier device. By integrating the silicon carbide device into a package and utilizing the characteristics of silicon carbide material such as strong pressure resistance, high electron saturation drift rate and high thermal conductivity, the silicon carbide chip can be used under higher voltage and high frequency working conditions, thereby improving the efficiency of the power amplifier circuit, reducing circuit energy loss, reducing heat generation, reducing the space occupied by the power amplifier circuit on the circuit board, and reducing production costs.

[0082] The above descriptions are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A silicon carbide power amplifier circuit integrated module, characterized in that: include: A ceramic substrate, wherein a metal coating layer is provided on one side of the ceramic substrate, and a conductive circuit is formed on the metal coating layer; A silicon carbide power amplifier device, wherein the pad of the silicon carbide power amplifier device is electrically connected to the conductive circuit.

2. The silicon carbide power amplifier circuit integrated module according to claim 1, characterized in that: A plurality of pins are connected to the ceramic substrate, and the pins are electrically connected to corresponding pads of the silicon carbide power amplifier device through the conductive lines.

3. The silicon carbide power amplifier circuit integrated module according to claim 2, characterized in that: The silicon carbide power amplifier device is an inverting power amplifier type or a complementary symmetrical power amplifier type.

4. The silicon carbide power amplifier circuit integrated module according to claim 3, characterized in that: The inverting power amplifier includes a first transistor, a second transistor and a third transistor; The base of the first transistor is connected to the first pin, the emitter of the first transistor is connected to the base of the second transistor, the base of the second transistor is also connected to the second pin, the collector of the first transistor is connected to the base of the third transistor, and the base of the third transistor is also connected to the third pin; The collector of the second transistor is connected to the fourth pin, the emitter of the second transistor is connected to the emitter of the third transistor, and the emitter of the third transistor is also connected to the fifth pin; the collector of the third transistor is connected to the sixth pin.

5. The silicon carbide power amplifier circuit integrated module according to claim 3, characterized in that: The complementary symmetrical power amplifier includes a first transistor, a second transistor, a third transistor, a first diode and a second diode; The base of the first transistor is connected to the first pin, the emitter of the first transistor is connected to the second pin, the collector of the first transistor is connected to the cathode of the first diode, and the collector of the first transistor is also connected to the base of the second transistor; The collector of the second transistor is connected to the third pin, the emitter of the second transistor is connected to the fourth pin, and the emitter of the second transistor is also connected to the emitter of the third transistor; The collector of the third transistor is connected to the fifth pin, the base of the third transistor is connected to the sixth pin, the base of the third transistor is also connected to the anode of the second diode, and the anode of the first diode is connected to the cathode of the second diode.

6. The silicon carbide power amplifier circuit integrated module according to claim 3, characterized in that: The complementary symmetrical power amplifier includes: a first transistor, a second transistor, a third transistor, a first diode and a second diode; The base of the first transistor is connected to the first pin, the emitter of the first transistor is connected to the second pin, the emitter of the first transistor is also connected to the collector of the second transistor, the collector of the first transistor is connected to the cathode of the first diode, and the collector of the first transistor is also connected to the anode of the second diode; The emitter of the second transistor is connected to the third pin, the emitter of the second transistor is also connected to the emitter of the third transistor, the base of the second transistor is connected to the fourth pin, and the base of the second transistor is also connected to the cathode of the second diode; The collector of the third transistor is connected to the fifth pin, the base of the third transistor is connected to the sixth pin, and the base of the third transistor is also connected to the anode of the first diode.

7. The silicon carbide power amplifier circuit integrated module according to claim 3, characterized in that: The complementary symmetrical power amplifier includes: a first transistor, a first power composite tube, a second power composite tube, a first diode and a second diode; The base of the first transistor is connected to the first pin, the collector of the first transistor is connected to the base of the first power composite tube, the collector of the first transistor is also connected to the cathode of the first diode, the emitter of the first transistor is connected to the collector of the first power composite tube, and the emitter of the first transistor is also connected to the second pin; The emitter of the first power composite tube is connected to the third pin, the emitter of the first power composite tube is also connected to the emitter of the second power composite tube, the collector of the second power composite tube is connected to the fourth pin, and the base of the second power composite tube is connected to the fifth pin; An anode of the first diode is connected to a cathode of the second diode, and an anode of the second diode is connected to a sixth pin.

8. The silicon carbide power amplifier circuit integrated module according to claim 7, characterized in that: The first power compound tube includes a second transistor and a third transistor, and the second power compound tube includes a fourth transistor and a fifth transistor; The base of the second transistor is the base of the first power composite tube, the collector is connected to the base of the third transistor, the emitter is connected to the collector of the third transistor, the emitter of the second transistor and the collector of the third transistor serve together as the emitter of the first power composite tube, and the emitter of the third transistor serves as the collector of the first power composite tube; The base of the fourth transistor serves as the base of the second power compound tube, the collector is connected to the collector of the fifth transistor, the collector of the fourth transistor and the collector of the fifth transistor serve together as the collector of the second power compound tube, the emitter of the fourth transistor is connected to the base of the fifth transistor, and the emitter of the fifth transistor serves as the emitter of the second power compound tube.

9. The silicon carbide power amplifier circuit integrated module according to claim 1, characterized in that: The silicon carbide power amplifier circuit integrated module adopts a bridge package.

10. A power amplifier circuit, characterized in that: The power amplifier circuit comprises the silicon carbide power amplifier circuit integrated module as claimed in any one of claims 1 to 9.

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