5G communication GaN radio frequency power amplifier and heat dissipation mechanism thereof

Abstract

The utility model belongs to the field of power amplifiers, and particularly relates to a 5G communication GaN radio frequency power amplifier and a heat dissipation mechanism thereof, the 5G communication GaN radio frequency power amplifier comprises a GaAs driving amplification circuit and a GaN main power amplification circuit, the GaAs driving amplification circuit is electrically connected with the GaN main power amplification circuit through a bonding gold wire, and the bonding gold wire is electrically connected with the GaN main power amplification circuit. The drain electrode power supply input end of the GaAs driving amplification circuit and the drain electrode power supply input end of the GaN main power amplification circuit are both coupled with a protection circuit, and grid current can be generated on the protection circuit. According to the utility model, the grid voltage required by the grid of the radio frequency power amplifier is converted and generated through the protection circuit, so that a power amplifier device is protected, and the power amplifier circuit and the power amplifier device are prevented from being damaged due to over-high voltage given by a power-on time sequence error and misoperation in a power-on process.

Description

Technical Field

[0001] The utility model relates to the technical field of power amplifiers, and specifically to a 5G communication GaN radio frequency power amplifier and a heat dissipation mechanism thereof. Background Art

[0002] The rapid development of 5G communication technology has brought about the demand for more efficient and reliable power amplifiers. As a key component in wireless communication systems, power amplifiers are essential for achieving high-speed data transmission, wider coverage and lower latency in 5G networks. In traditional mobile communications, power amplifiers are mainly used to increase the power of signals in order to overcome signal attenuation during transmission and ensure that the signal can cover a sufficient range. However, compared with 4G, the higher frequency and wider bandwidth signals used in 5G communications mean that the signal will attenuate faster during transmission, thus placing higher requirements on the performance of power amplifiers.

[0003] GaN technology can work in a higher frequency range, which enables GaN RF power amplifiers to adapt to the high-frequency operation required by 5G communication systems. However, GaN power amplifiers are depletion-type devices, and their gate voltage and drain voltage have extremely stringent requirements on power-on and power-off timing. When powering on, the GaN power amplifier needs the gate voltage to power on before the drain voltage; when powering off, the GaN power amplifier needs the gate voltage to power off after the drain voltage. If the gate and drain of the GaN power amplifier have power-on timing errors or logical confusion, the GaN power amplifier will burn out and fail to work. For this reason, we provide a 5G communication GaN RF power amplifier and its heat dissipation mechanism. Utility Model Content

[0004] The utility model aims to provide a 5G communication GaN radio frequency power amplifier and a heat dissipation mechanism thereof, which can solve the problem of device burning caused by the power-on timing of the power amplifier.

[0005] To this end, the technical solution adopted in this utility model is:

[0006] A 5G communication GaN radio frequency power amplifier includes a GaAs driving amplifier circuit and a GaN main power amplifier circuit. The GaAs driving amplifier circuit and the GaN main power amplifier circuit are electrically connected via bonding gold wires, and the drain power input terminals of the GaAs driving amplifier circuit and the GaN main power amplifier circuit are coupled to a protection circuit, and a gate current is generated in the protection circuit.

[0007] Based on the above technical solution, its use principle and the technical effects produced are as follows:

[0008] In actual use, the GaAs drive amplifier circuit and the GaN main power amplifier circuit only need to add voltage to one end of the drain during the power-on process. On the one hand, the drain voltage VD will generate a judgment voltage through U2, U6, U1 and U3, such as the -6V voltage in the figure. If the voltage generated by the U3 unit is equal to -6V, it will generate the gate voltage of the amplifier circuit through U5 to power the gate. Figure 2 The -2.5V voltage generated as shown in the figure is the gate voltage of the amplifier circuit; if the voltage generated by U3 is not equal to -6V, the situation where a voltage not equal to -6V is generated here generally only occurs when the external supply drain voltage is too high. At this time, the circuit protection mechanism will react and completely shut down the entire circuit, thereby protecting the entire power amplifier. On the other hand, due to the existence of the entire circuit protection mechanism, U5 and U7 jointly generate an enable voltage to supply to U2. U2 will generate a 20V voltage only when it receives the enable signal, thereby forming a perfect closed-loop circuit for the entire protection circuit.

[0009] In a preferred example, the utility model can be further configured as follows: the protection circuit includes:

[0010] An overcurrent detection protection circuit, for receiving an adjusted bias voltage;

[0011] A negative feedback regulation circuit, used for receiving and regulating an enable voltage signal, and generating an overcurrent signal according to the enable voltage signal;

[0012] The control module is used to receive the overcurrent signal to control the working state of the radio frequency power amplifier.

[0013] In a preferred example, the utility model can be further configured as follows: the overcurrent detection protection circuit includes U2, U6 and U1, the input end of U2 is connected to the external drain power input end for receiving the drain voltage, the output end of U2 is connected to the input end of U6, and the output end of U6 is connected to the input end of U1.

[0014] In a preferred example, the utility model can be further configured as follows: the protection circuit also includes U3, which is connected to the output end of U1 to receive the output voltage of U1, and the output end of U3 is connected to the negative feedback regulation circuit.

[0015] In a preferred example, the utility model can be further configured as follows: the negative feedback regulation circuit includes U5, U7 and U2, the output end of U5 is connected to the input end of U7, the output end of U7 is connected to the enable input end of U2, U7 converts and generates an enable signal into U2, and U2 receives the enable signal to control the circuit to work.

[0016] In a preferred example, the present invention can be further configured as follows: the control module includes U1 and U2, wherein U1 is a linear regulator and U2 is a voltage regulator.

[0017] In a preferred example, the utility model can be further configured as follows: the input end of the GaAs driving amplifier circuit is connected to a ceramic input matching circuit through a bonding gold wire, and the output end of the GaN main power amplifier circuit is connected to a ceramic output matching circuit through a bonding gold wire.

[0018] In a preferred example, the utility model can be further configured as follows: the GaAs driving amplifier circuit is a single-stage amplifier circuit, and the GaN main power amplifier circuit is a two-stage amplifier circuit.

[0019] According to one aspect of the utility model, the utility model provides a heat dissipation mechanism for a radio frequency power amplifier, which includes multiple groups of heat dissipation fins, and the multiple groups of heat dissipation fins are all fixed on the outer side wall of the radio frequency power amplifier, and the multiple groups of heat dissipation fins are arranged symmetrically as a whole.

[0020] Furthermore: the heat sink fins are made of copper, and the heat sink fins are overall configured in a plate shape.

[0021] The nouns, conjunctions or adjectives involved in the above technical solution are explained as follows:

[0022] Fixed connection refers to a connection in which parts or components are fixed without any relative movement. There are two types of connection: detachable and non-detachable.

[0023] (1) A removable connection is a connection that uses screws, splines, wedge pins, etc. to hold parts together. This type of connection can be disassembled for maintenance without damaging the parts. However, the specifications of the connectors used must be correct (such as the length of the bolts, keys, and wedge pins) and they must be properly tightened.

[0024] (2) Non-detachable connections mainly refer to welding, riveting and tenoning. Since they need to be disassembled by forging, sawing or oxygen cutting for maintenance or replacement, spare parts generally cannot be reused. At the same time, when making connections, attention should be paid to process quality, technical inspection and remedial measures (such as calibration, polishing, etc.);

[0025] An active connection is a connection in which parts or components are fixed so that they can move relative to each other.

[0026] The above technical solution of the utility model has the following beneficial technical effects:

[0027] 1. In the utility model, the protection circuit provided converts the gate voltage required for the RF power amplifier gate to protect the power amplifier device, and will not cause damage to the power amplifier circuit and devices due to excessively high voltage caused by power-on timing errors and erroneous operations during the power-on process.

[0028] 2. The heat dissipation mechanism described in the utility model can effectively dissipate the heat of the power amplifier, ensuring that the power amplifier will not cause irreversible damage to the device due to excessively high temperature during long-term operation, thereby effectively improving the linear power of the RF power amplifier and meeting the requirements of the 5G communication system. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 This is the overall circuit diagram of the radio frequency power amplifier of the utility model;

[0030] Figure 2 A circuit diagram of the protection circuit of the utility model;

[0031] Figure 3 This is a schematic diagram of the actual test of the radio frequency power amplifier of the utility model;

[0032] Figure 4 This is the 2GHz input-gain relationship curve of the utility model;

[0033] Figure 5 This is a schematic diagram of the structure of the radio frequency power amplifier of the utility model;

[0034] Figure 6 This is a schematic diagram of the structure of the heat dissipation fin of the utility model;

[0035] Figure 7 Schematic diagram of thermal simulation using heat dissipation structure for RF power amplifier;

[0036] Figure 8 Schematic diagram of thermal simulation of an RF power amplifier without a heat dissipation structure.

[0037] Reference numerals:

[0038] 1. GaAs driving amplifier circuit; 2. GaN main power amplifier circuit; 3. Protection circuit; 31. Overcurrent detection protection circuit; 32. Negative feedback regulation circuit; 33. Control module; 4. Ceramic input matching circuit; 5. Ceramic output matching circuit. DETAILED DESCRIPTION

[0039] The following will be combined with the drawings in the embodiments of the present disclosure to clearly and completely describe the technical solutions in the embodiments of the present disclosure. Obviously, the described embodiments are only part of the embodiments of the present disclosure, rather than all of the embodiments. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure. It should be noted that the embodiments of the present utility model and the features in the embodiments can be combined with each other without conflict.

[0040] Embodiment 1:

[0041] According to the concept of this application, Figures 1 to 4 To describe an embodiment of a 5G communication GaN RF power amplifier capable of realizing overcurrent circuit protection. Specifically, the 5G communication GaN RF power amplifier is constructed as an integrated structure, which has a GaAs drive amplifier circuit 1, a GaN main power amplifier circuit 2 and a protection circuit 3. In the utility model, the protection circuit is set to convert the gate voltage required to generate the gate of the RF power amplifier to play a protective role in the power amplifier device, and will not cause damage to the power amplifier circuit and device due to power-on timing errors and excessive voltage caused by erroneous operations during the power-on process.

[0042] Combination Figure 1-4 As shown, a 5G communication GaN RF power amplifier provided by the utility model includes a GaAs driving amplifier circuit 1 and a GaN main power amplifier circuit 2. The GaAs driving amplifier circuit 1 and the GaN main power amplifier circuit 2 are electrically connected through bonding gold wires, and the drain power input terminals of the GaAs driving amplifier circuit 1 and the GaN main power amplifier circuit 2 are coupled to a protection circuit 3, and a gate current will be generated in the protection circuit 3.

[0043] According to the technical solution of this embodiment, the input end of the GaAs driving amplifier circuit 1 is connected to the ceramic input matching circuit 4 through a bonding gold wire, and the output end of the GaN main power amplifier circuit 2 is connected to the ceramic output matching circuit 5 through a bonding gold wire, which is used to reduce the RF loss of the RF circuit. The RF input reaches the GaAs driving amplifier circuit 1 (or called the pre-stage driver) through the ceramic input matching circuit 4, and the RF signal enters the GaN main power amplifier circuit 2 after the driving amplification, and then passes through the ceramic output matching circuit 5 through the connection method of the bonding gold wire to the power amplifier output port.

[0044] Further, such as Figure 1 As shown, VD1 is the drain power supply port of the GaAs driving amplifier circuit 1, and VD1 passes through the protection circuit 3 which is also a conversion circuit for converting the gate voltage to generate the gate voltage of the GaAs driving amplifier circuit 1;

[0045] The chip used in the GaAs driving amplifier circuit 1 is implemented based on GaN HEMT and adopts a single-stage amplifier circuit. During use, because the protection circuit 3 is coupled, there is no requirement for the power-on timing of the power amplifier.

[0046] Further, such as Figure 1 As shown, VD2 is the drain power supply port of the GaN main power amplifier circuit 2, and VD2 generates the gate voltage of the GaN main power amplifier circuit 2 through the protection circuit 3;

[0047] The chip used in the GaN main power amplifier circuit 2 is based on GaN HEMT and adopts a two-stage amplifier circuit. The GaN chip is manufactured using a 0.25μmGaN power monolithic microwave integrated circuit (MMIC) process and is a broadband high-power amplifier chip. It is grounded through a through-hole through the back metal and adopts a dual power supply working mode. At the same time, a filter capacitor is set outside the chip to filter out the noise generated when the power is turned on. During use, the GaN main power amplifier circuit 2 is also coupled to the protection circuit 3, so there is no requirement for its power-on timing.

[0048] According to the technical solution of this embodiment, the protection circuit 3 uses the stable output state of the gate voltage as a trigger signal through the logic control circuit to control the opening of the drain voltage. The 1000pF and 330pF capacitors in the protection circuit 3 are both filter capacitors of the power supply, which are used to ensure efficient and smooth DC output of the power supply.

[0049] The protection circuit 3 comprises:

[0050] An overcurrent detection protection circuit 31 is used to receive an adjustment bias voltage;

[0051] A negative feedback regulation circuit 32, for receiving and regulating an enable voltage signal, and generating an overcurrent signal according to the enable signal;

[0052] The control module 33 is used to receive the overcurrent signal to control the working state of the RF power amplifier.

[0053] Among them, Figure 2 As shown, the overcurrent detection protection circuit 31 includes U2, U6 and U1, the input end of U2 is connected to the external drain power input end for receiving the drain voltage, the output end of U2 is connected to the input end of U6, the output end of U6 is connected to the input end of U1, the input end of U2 receives the external drain voltage, and then the output end of U2 generates a 20V voltage connected to the gate drive output end of U6, the signal is input from the high voltage side to U6, and the phase is kept unchanged by U6 to output a 12V voltage to power U1;

[0054] It should be noted that the control module 33 includes U1 and U2, U2 is a voltage regulator, and U1 is a low-noise, low-dropout linear regulator. When the output voltage generated by U6 is higher than the U1 threshold or U1 receives an erroneous reverse voltage, the overcurrent signal is valid. At this time, the negative feedback circuit will not generate an enable signal, and the bias drive circuit stops working. At this time, the RF power amplifier enters the circuit protection mode.

[0055] Furthermore, the internal circuit of U1 not only has reverse voltage, current limiting and reverse current protection, but U1 also has over-temperature protection. The integrated circuit includes over-temperature protection to protect the device in the event of a momentary overload.

[0056] Among them, Figure 2 As shown, the protection circuit 3 also includes U3, which acts as a bridge in the entire protection circuit 3. U3 is connected to the output end of U1, receives the output voltage of U1, and generates a reverse voltage of constant magnitude. If the generated reverse voltage is within the threshold range of U5, the output voltage of U3 becomes the input voltage of U5, and U5 generates a gate voltage for the RF amplifier circuit.

[0057] Among them, Figure 2 As shown, the negative feedback regulation circuit 32 includes U5, U7 and U2, and finally generates a control enable signal to enter U2. The entire protection circuit 3 controls the working state of the RF power amplifier through negative feedback regulation; U5 outputs a voltage of -5V, and the output end of U5 is connected to the input end of U7. U7 converts and generates an enable signal to enter the enable input end of U2, and U2 receives the enable signal to control the normal operation of the circuit.

[0058] Specifically, if Figure 2 As shown, in actual use, the GaAs driving amplifier circuit 1 and the GaN main power amplifier circuit 2 only need to add a voltage to one end of the drain during the power-on process. On the one hand, the drain voltage VD will generate a judgment voltage through U2, U6, U1 and U3, such as the -6V voltage in the figure. If the voltage generated by the U3 unit is equal to -6V, it will generate the gate voltage of the amplifier circuit through U5 to power the gate, such as Figure 2 The -2.5V voltage generated as shown in the figure is the gate voltage of the amplifier circuit; if the voltage generated by U3 is not equal to -6V, the situation where a voltage not equal to -6V is generated here generally only occurs when the external supply drain voltage is too high. At this time, the circuit protection mechanism will react and completely shut down the entire circuit, thereby protecting the entire power amplifier. On the other hand, due to the existence of the entire circuit protection mechanism, U5 and U7 jointly generate an enable voltage to supply to U2. U2 will generate a 20V voltage only when it receives the enable signal, thereby forming a perfect closed-loop circuit for the entire protection circuit 3.

[0059] like Figure 3As shown, in the present application, a 5G communication GaN RF power amplifier is subjected to actual RF performance test. After completing the assembly and connection of the RF and power supply parts of the power amplifier module, a static power-on test is performed on the power amplifier module. Before power-on, the gate and drain resistances of the power amplifier chip are checked. Under normal circumstances, the gate resistance should be at the level of tens of megohms, and the drain resistance should be about 1 ohm. After confirming that there is no abnormality, power can be turned on. A 9V voltage is provided at the drain of the GaAs drive amplifier circuit 1, and a 30V voltage is provided at the drain of the GaN main power amplifier circuit 2. The RF input port is connected to a signal generator, and the RF output port is connected to a spectrum analyzer. The computer is connected to the USB interface of the spectrum analyzer to save the test data. The actual test results show that the maximum gain of the power amplifier exceeds 46dB when it is working normally; the output power-gain relationship curve is drawn as shown in Figure 5 As shown;

[0060] The test results show that the amplification performance of the GaN RF power amplifier is far superior to that of the traditional RF power amplifier, and the technical solution of the present application can effectively improve the linear power of the RF power amplifier.

[0061] The following is a further description of a 5G communication GaN RF power amplifier provided by the utility model in combination with the accompanying drawings and implementation methods.

[0062] A 5G communication GaN radio frequency power amplifier includes a GaAs driving amplifier circuit 1 and a GaN main power amplifier circuit 2. The GaAs driving amplifier circuit 1 and the GaN main power amplifier circuit 2 are electrically connected through bonding gold wires, and the drain power input terminals of the GaAs driving amplifier circuit 1 and the GaN main power amplifier circuit 2 are coupled to a protection circuit 3, and a gate current will be generated in the protection circuit 3.

[0063] Embodiment 2:

[0064] According to one aspect of the utility model, the utility model provides a radio frequency power amplifier heat dissipation mechanism, including multiple groups of heat dissipation fins, the multiple groups of heat dissipation fins are all fixed on the outer side wall of the radio frequency power amplifier, and the multiple groups of heat dissipation fins are arranged symmetrically as a whole.

[0065] Furthermore: the heat sink fins are made of copper, and the heat sink fins are overall configured in a plate shape.

[0066] For the technical solution of this embodiment, Figure 6 As shown, the whole is composed of three parts: A, B, and C, among which A1 and A2 are symmetrical; B1 and B2 are symmetrical; C is an independent part. It should be noted that the spacing between the parts is as equal as possible to avoid uneven heat dissipation caused by too large or too small spacing.

[0067] It should be noted that after the power chip is packaged into the tube shell, the entire power amplifier circuit is Figure 5As shown, the overall area of ​​the amplifier is 70*60mm. In the process of designing the power amplifier, it is considered that the interconnected bonding wires will increase the loss, especially the microstrip and bonding wire losses from the chip to the output port of the GaN power amplifier circuit are relatively large, and will also cause impedance mismatch. Because the GaN power amplifier is suitable for 5G high-power communication, in terms of circuit design, on the one hand, the heating of the GaN chip must be considered, and the length and curvature of the bonding wire must be simulated according to the space conditions of the chip, protection circuit 3, bonding wire, filter capacitor, tube shell, and SMA connector. Especially when designing the GaN power amplifier circuit, it is necessary to weld 4 gold wires at the VD end and the RF output end to minimize the RF loss from the bonding wire and the GaN RF amplifier circuit output end to the SMA connector end. Finally, 4 25μm bonding wires are connected in parallel to match the input and output port impedances of the entire circuit to the optimal state of 50 ohms, ensuring the high power and high efficiency output of the packaged chip.

[0068] like Figure 7 As shown in the figure, the RF power amplifier is thermally simulated in Ansys. Steady-state thermal and transient thermal simulations are mainly performed in Ansys. The main parameters to be set are heat flow, heat flux, internal heat generation and convection. Heat flow is the heat dissipation power consumption of the chip. The specific parameters are calculated as follows:

[0069] Chip volume: V = 2.53*1.84*0.1mm

[0070] Internal heat generation:

[0071] Heat flow: In actual analysis, it needs to be converted into heat flux (area) or internal heat generation (volume) based on the usage area or volume.

[0072] The thermal dissipation power consumption of the GaN chip is 15W, so the internal heat generation is.

[0073] In order to compare and analyze the heat dissipation performance of power amplifiers, two aspects are introduced here. Figure 8 As shown in FIG. 1 , when a RF power amplifier device is thermally simulated with a fin-shaped heat dissipation structure, the heat generation temperature of the chip is 60°C-85°C. The heat generation temperature of the chip during operation is within the maximum operating temperature of the GaN chip of 85°C given in the specification, meeting the heat dissipation conditions. Figure 8As shown in the figure, under the same simulation parameter conditions, the thermal simulation of the power amplifier circuit without the fin-shaped heat dissipation structure is carried out as a whole. When the fin-shaped heat dissipation structure is not added, the heating temperature of the chip is 103℃-128℃, which is far beyond the maximum operating temperature of the chip of 85℃. The overall heat dissipation of the RF power amplifier is good. In summary, the heat dissipation structure is of great significance to extending the service life of the GaN chip and improving the thermal reliability of the device.

[0074] It should be noted that the 5G communication GaN RF power amplifier and the other parts of the RF power amplifier heat dissipation mechanism provided by this application can be designed, manufactured and sold separately, or they can be assembled together and sold as a whole. Regardless of the monomers formed before the combination or the whole formed after the combination, they all fall within the scope of protection of this application.

[0075] In the present utility model, the term "plurality" refers to two or more than two, unless otherwise clearly defined. The term "and / or" used in this article includes any and all combinations of one or more related listed items. The terms "install", "connect", "connect", "fix" and the like should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; "connection" can be a direct connection or an indirect connection through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to the specific circumstances.

[0076] It should be noted that when an element is referred to as being "assembled on", "installed on", "fixed on" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation method.

[0077] In the description of this specification, the description of the terms "one embodiment", "some embodiments", "specific embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the utility model. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0078] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A 5G communication GaN radio frequency power amplifier, comprising a GaAs drive amplifier circuit (1) and a GaN main power amplifier circuit (2), characterized in that: The GaAs driving amplifier circuit (1) and the GaN main power amplifier circuit (2) are electrically connected via a bonding gold wire, and the drain power input terminals of the GaAs driving amplifier circuit (1) and the GaN main power amplifier circuit (2) are both coupled to a protection circuit (3), and a gate current is generated in the protection circuit (3).

2. A 5G communication GaN RF power amplifier according to claim 1, characterized in that: The protection circuit (3) comprises: An overcurrent detection protection circuit (31) is used to receive an adjusted bias voltage; A negative feedback regulation circuit (32) is used to receive and regulate an enable voltage signal, and generate an overcurrent signal according to the enable voltage signal; A control module (33) is used to receive the overcurrent signal to control the working state of the radio frequency power amplifier.

3. A 5G communication GaN RF power amplifier according to claim 2, characterized in that: The overcurrent detection protection circuit (31) comprises U2, U6 and U1, the input end of U2 is connected to the external drain power input end for receiving the drain voltage, the output end of U2 is connected to the input end of U6, and the output end of U6 is connected to the input end of U1.

4. A 5G communication GaN RF power amplifier according to claim 3, characterized in that: The protection circuit (3) further comprises U3, which is connected to the output end of U1 and receives the output voltage of U1, and the output end of U3 is connected to the negative feedback regulation circuit (32).

5. A 5G communication GaN RF power amplifier according to claim 4, characterized in that: The negative feedback regulation circuit (32) comprises U5, U7 and U2, wherein the output end of U5 is connected to the input end of U7, and the output end of U7 is connected to the enable input end of U2. U7 converts and generates an enable signal which enters U2, and U2 receives the enable signal to control the circuit to work.

6. A 5G communication GaN RF power amplifier according to claim 5, characterized in that: The control module (33) comprises U1 and U2, wherein U1 is a linear regulator and U2 is a voltage regulator.

7. A 5G communication GaN RF power amplifier according to claim 1, characterized in that: The input end of the GaAs driving amplifier circuit (1) is connected to a ceramic input matching circuit (4) via a bonding gold wire, and the output end of the GaN main power amplifier circuit (2) is connected to a ceramic output matching circuit (5) via a bonding gold wire.

8. A 5G communication GaN RF power amplifier according to claim 7, characterized in that: The GaAs driving amplifier circuit (1) is a single-stage amplifier circuit, and the GaN main power amplifier circuit (2) is a two-stage amplifier circuit.

9. A radio frequency power amplifier heat dissipation mechanism, applied to a 5G communication GaN radio frequency power amplifier according to any one of claims 1 to 8, characterized in that: It comprises a plurality of groups of heat dissipation fins, which are all fixed on the outer side wall of the radio frequency power amplifier, and the plurality of groups of heat dissipation fins are arranged symmetrically as a whole.

10. The radio frequency power amplifier heat dissipation mechanism according to claim 9, characterized in that: The heat dissipation fins are made of copper, and the heat dissipation fins are configured as a plate as a whole.

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