Plasma processing equipment

Abstract

The utility model provides plasma processing equipment which comprises a plasma processing chamber and a magnetic isolation shielding cover, the magnetic isolation shielding cover comprises a hollow cylindrical structure, and the cylindrical structure is arranged outside the plasma processing chamber in a covering mode and is attached to the outer wall of the plasma processing chamber. The cylindrical structure is arranged in the plasma processing chamber so as to isolate interference of an external magnetic field to plasma in the plasma processing chamber, and the height of the cylindrical structure is larger than that of the plasma processing chamber. According to the utility model, the interference of an external magnetic field on plasmas in the plasma processing chamber can be isolated, so that the stability of the magnetic field in the plasma processing chamber is ensured, and the non-uniform distribution of the plasmas in the plasma processing chamber caused by the interference of the external magnetic field on the magnetic field in the plasma processing chamber is avoided; and the wafer processing uniformity and reproducibility can be improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductors, in particular to a plasma processing device. Background Art

[0002] The plasma processing equipment introduces Ar gas as the working gas, and generates an electric field through a radio frequency electrode such as a radio frequency coil to break down the gas, thereby exciting and generating plasma above the base. The Ar ions in the plasma bombard the substrate under the action of the base bias, thereby achieving the pre-cleaning work of removing the oxide layer on the metal surface at the bottom of the groove or hole.

[0003] The main components of plasma are electrons, positive ions and neutral particles. Among them, neutral particles are not affected by magnetic fields, while charged particles will be deflected under the action of magnetic fields. Among them, heavy ions are less deflected under the action of magnetic fields, while light electrons are more affected by the Lorentz force. Under the interference of external magnetic fields, it is easy to cause the magnetic field distribution in the plasma processing chamber to change, which can easily cause uneven plasma distribution, causing deviations in the distribution of plasma generated in the processing chamber, and easily causing damage to the uniformity and reproducibility of wafer processing. Utility Model Content

[0004] The utility model aims to provide a plasma processing device to isolate the interference of the external magnetic field on the plasma in the plasma processing chamber, thereby ensuring the stability of the magnetic field in the plasma processing chamber, avoiding the magnetic field in the plasma processing chamber being disturbed by the external magnetic field and causing uneven distribution of the plasma in the plasma processing chamber, which is beneficial to improving the uniformity and reproducibility of wafer processing.

[0005] To achieve the above-mentioned purpose, the plasma processing equipment of the utility model includes a plasma processing chamber and a magnetic isolation shielding cover, the magnetic isolation shielding cover includes a hollow cylindrical structure, the cylindrical structure cover is arranged outside the plasma processing chamber and is arranged in close contact with the outer wall of the plasma processing chamber to isolate the interference of the external magnetic field on the plasma in the plasma processing chamber, and the height of the cylindrical structure is greater than the height of the plasma processing chamber.

[0006] The beneficial effect of the plasma processing equipment of the utility model is that: the magnetic isolation shielding cover includes a hollow cylindrical structure, and the cylindrical structure cover is arranged outside the plasma processing chamber, that is, the magnetic isolation shielding cover is installed outside the plasma processing chamber to isolate the interference of the external magnetic field on the plasma in the plasma processing chamber, thereby ensuring the stability of the magnetic field in the plasma processing chamber, avoiding the magnetic field in the plasma processing chamber being disturbed by the external magnetic field and causing uneven distribution of plasma in the plasma processing chamber, which is beneficial to improving the uniformity and reproducibility of wafer processing; at the same time, the cylindrical structure is arranged to fit the outer wall of the plasma processing chamber, and the height of the cylindrical structure is greater than the height of the plasma processing chamber, which is beneficial to improving the shielding efficiency of the magnetic isolation shielding cover against the external magnetic field and reducing the interference of the external magnetic field on the plasma in the plasma processing chamber.

[0007] Preferably, the plasma processing equipment further comprises a plasma generator, the plasma generator is arranged at the top of the plasma processing chamber, and the diameter of the plasma generator is smaller than the diameter of the plasma processing chamber, and the magnetic isolation shielding cover further comprises an annular structure, one end of the annular structure is connected to the top of the cylindrical structure, and the other end of the annular structure is extended toward the plasma generator to shield part of the top of the plasma processing chamber. The beneficial effect is that the magnetic isolation shielding cover is ensured to have a good shielding effect, and the external magnetic field in the direction of the top of the plasma processing chamber is prevented from affecting the plasma in the plasma processing chamber.

[0008] Preferably, the angle between the cylindrical structure and the annular structure is 90° to 150°. The beneficial effect is to ensure that the magnetic isolation shield has a good shielding effect and prevent the external magnetic field in the top direction of the plasma processing chamber from affecting the plasma in the plasma processing chamber.

[0009] Preferably, the distance between the top of the cylindrical structure and the top of the plasma processing chamber is greater than or equal to 10 mm, and the top of the magnetic isolation shield is lower than the top of the plasma generator. Its beneficial effect is to improve the shielding efficiency of the external magnetic field while avoiding affecting the heat dissipation of the plasma processing chamber.

[0010] Preferably, the width of the projection of the annular structure in the radial direction of the cylindrical structure is not greater than 10 mm. The beneficial effect is to improve the shielding efficiency of the external magnetic field and avoid affecting the heat dissipation of the plasma processing chamber.

[0011] Preferably, the cylindrical structure is provided with a plurality of heat dissipation parts penetrating the cylindrical structure, and the heat dissipation parts include at least one of a hole structure, a slit segment structure, a square structure, a triangle structure and an arc structure. The beneficial effect is that after the magnetic isolation shielding cover is arranged outside the plasma processing chamber, the problem of uneven heat dissipation in the plasma processing chamber is avoided.

[0012] Preferably, the heat dissipation portion is a slit segment structure, and the length of the slit segment structure does not exceed 1 / 2 of the circumference of the cylindrical structure, and the width of the slit segment structure is 10 mm to 20 mm. Its beneficial effect is to avoid the problem of uneven heat dissipation in the plasma processing chamber after the magnetic isolation shielding cover is arranged outside the plasma processing chamber, and to avoid the heat dissipation portion being too large to affect the shielding efficiency of the magnetic isolation shielding cover against the external magnetic field.

[0013] Preferably, the plasma processing equipment further comprises a fixing member, the fixing member comprises a transverse portion and a vertical portion, the transverse portion and the vertical portion are vertically arranged to form an L-shaped structure, the transverse portion is fixed to the top of the plasma processing chamber by screws passing through the threaded through holes on the transverse portion and the threaded through holes on the top of the plasma processing chamber, and the vertical portion is fixed to the cylindrical structure by screws passing through the threaded through holes on the vertical portion and the threaded through holes on the cylindrical structure. The beneficial effect is that the fixing member of the L-shaped structure is simple in structure and easy to install, and is convenient for fixing the cylindrical structure to the top of the plasma processing chamber.

[0014] Preferably, the magnetic isolation shielding cover includes a first isolation part and a second isolation part, and the two side ends of the first isolation part in the circumferential direction are respectively arranged to abut against the two side ends of the second isolation part in the circumferential direction to be arranged outside the plasma processing chamber. The beneficial effect is that it makes it easier and more convenient to install the magnetic isolation shielding cover outside the plasma processing chamber, and it is also convenient for the cylindrical structure to be arranged in a close fit with the outer wall of the plasma processing chamber, so as to improve the shielding efficiency of the magnetic isolation shielding cover against the external magnetic field and reduce the interference of the external magnetic field on the plasma in the plasma processing chamber.

[0015] Preferably, the magnetic isolation shield is a nickel-iron alloy isolation screen, and / or the magnetic isolation shield is provided with a grounded wire. Its beneficial effects are: the ferromagnetic material made of nickel-iron alloy has a high magnetic permeability, which can shield the magnetic field and prevent the external magnetic field from interfering with the magnetic field in the plasma processing chamber; the magnetic isolation shield is provided with a grounded wire, so that the magnetic isolation shield can also shield the electric field. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic structural diagram of a plasma processing device according to a first embodiment of the utility model;

[0017] Figure 2 This is a schematic structural diagram of a plasma processing device according to a second embodiment of the present utility model;

[0018] Figure 3 for Figure 2 A schematic side view of a plasma processing apparatus is shown;

[0019] Figure 4 It is a structural schematic diagram of a plasma processing device according to a third embodiment of the utility model;

[0020] Figure 5 It is a schematic diagram of assembling a magnetic isolation shield in a plasma processing device according to a fourth embodiment of the utility model;

[0021] Figure 6 for Figure 2 A schematic structural diagram of a first isolation portion in a plasma processing device shown;

[0022] Figure 7 for Figure 5 FIG. 1 is a schematic diagram of the assembly of a magnetic isolation shield in a plasma processing device. FIG. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme in the embodiments of the utility model will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the utility model, not all of the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the utility model. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the utility model belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0024] In order to overcome the problems existing in the prior art, an embodiment of the utility model provides a plasma processing equipment to isolate the interference of the external magnetic field on the plasma in the plasma processing chamber, thereby ensuring the stability of the magnetic field in the plasma processing chamber, and avoiding the magnetic field in the plasma processing chamber being disturbed by the external magnetic field, resulting in uneven distribution of plasma in the plasma processing chamber, which is beneficial to improving the uniformity and reproducibility of wafer processing.

[0025] Figure 1 This is a schematic structural diagram of a plasma processing device according to a first embodiment of the utility model.

[0026] In some embodiments of the present invention, reference Figure 1 The plasma processing equipment includes a magnetic isolation shielding cover 1 and a plasma processing chamber 2. The magnetic isolation shielding cover 1 includes a hollow cylindrical structure 11. The cylindrical structure 11 is arranged outside the plasma processing chamber 2 and is fitted with the outer wall of the plasma processing chamber 2 to isolate the interference of the external magnetic field on the plasma in the plasma processing chamber 2, and the height of the cylindrical structure 11 is greater than the height of the plasma processing chamber 2.

[0027] Specifically, the magnetic isolation shielding cover 1 includes a hollow cylindrical structure 11, and the cylindrical structure 11 is arranged outside the plasma processing chamber 2. That is, the magnetic isolation shielding cover 1 is installed outside the plasma processing chamber 2 to isolate the interference of the external magnetic field on the plasma in the plasma processing chamber 2, thereby ensuring the stability of the magnetic field in the plasma processing chamber 2, avoiding the magnetic field in the plasma processing chamber 2 being disturbed by the external magnetic field and causing uneven distribution of the plasma in the plasma processing chamber 2, which is beneficial to improving the uniformity and reproducibility of wafer processing; at the same time, the cylindrical structure 11 is arranged to fit the outer wall of the plasma processing chamber 2, and the height of the cylindrical structure 11 is greater than the height of the plasma processing chamber 2, which is beneficial to improving the shielding efficiency of the magnetic isolation shielding cover 1 against the external magnetic field and reducing the interference of the external magnetic field on the plasma in the plasma processing chamber 2.

[0028] In some embodiments of the utility model, the magnetic isolation shield is a nickel-iron alloy isolation screen, that is, the magnetic isolation shield is made of nickel-iron alloy material. The ferromagnetic material of nickel-iron alloy has high magnetic permeability, which can shield the magnetic field and prevent the external magnetic field from interfering with the magnetic field in the plasma processing chamber. The principle of magnetic shielding for low-frequency alternating (or) static magnetic fields is to use high magnetic permeability materials to make a shielding body to confine the magnetic field in the magnetic isolation shield, thereby preventing the external magnetic field from interfering with the magnetic field inside the magnetic isolation shield.

[0029] In some embodiments of the utility model, the magnetic isolation shielding cover is provided with a grounded wire so that the magnetic isolation shielding cover can also achieve a shielding effect on the electric field. The shielding of the magnetic field is different from the shielding of the electric field. Whether the magnetic isolation shielding cover is grounded or not does not affect the efficiency of the magnetic shielding, but the magnetic isolation shielding cover also has a certain shielding effect on the electric field. Therefore, the magnetic isolation shielding cover is generally grounded to achieve a shielding effect on the electric field.

[0030] Figure 2 This is a schematic structural diagram of a plasma processing device according to a second embodiment of the present utility model; Figure 3 for Figure 2 A side view schematic diagram of a plasma processing device is shown.

[0031] In some embodiments of the present invention, reference Figure 2 and Figure 3 The plasma processing equipment also includes a plasma generator 3, which is arranged at the top of the plasma processing chamber 2, and the diameter of the plasma generator 3 is smaller than the diameter of the plasma processing chamber 2. The magnetic isolation shielding cover 1 also includes an annular structure 12, one end of the annular structure 12 is connected to the top of the cylindrical structure 11, and the other end of the annular structure 12 is extended toward the plasma generator 3 to cover part of the top of the plasma processing chamber 2, thereby ensuring that the magnetic isolation shielding cover 1 has a good shielding effect and preventing the external magnetic field in the top direction of the plasma processing chamber 2 from affecting the plasma in the plasma processing chamber 2.

[0032] In some embodiments of the present invention, a radio frequency electrode and a heat sink are provided in the plasma generator 3 , and the plasma generator 3 is communicated with the plasma processing chamber 2 .

[0033] In some embodiments of the present invention, reference Figure 2 and Figure 3 The angle a between the cylindrical structure and the annular structure is 90°~150°, so as to ensure that the magnetic isolation shielding cover 1 has a good shielding effect and prevent the external magnetic field in the top direction of the plasma processing chamber 2 from affecting the plasma in the plasma processing chamber 2.

[0034] In some embodiments of the present invention, reference Figure 3 The angle a between the cylindrical structure and the annular structure is the angle between the inner side wall of the cylindrical structure and the inner side wall of the annular structure.

[0035] In some specific embodiments of the present invention, the angle a between the cylindrical structure 11 and the annular structure 12 is any one of 90°, 100°, 120°, 135°, 140° and 150°.

[0036] In some embodiments of the present invention, reference Figures 1 to 3 The distance L1 between the top of the cylindrical structure 11 and the top of the plasma processing chamber 2 is greater than or equal to 10 mm, and the top of the magnetic isolation shielding cover 1 is lower than the top of the plasma generator 3 to improve the shielding efficiency of the external magnetic field while avoiding affecting the heat dissipation of the plasma processing chamber 2.

[0037] In some embodiments of the present invention, reference Figure 1 The distance L1 between the top of the tubular structure 11 and the top of the plasma processing chamber 2 is greater than or equal to 10 mm, and the top of the tubular structure 11 is lower than the top of the plasma generator 3 .

[0038] In some embodiments of the present invention, reference Figure 2 and Figure 3 The distance L1 between the top of the cylindrical structure 11 and the top of the plasma processing chamber 2 is greater than or equal to 10 mm, and the top of the annular structure 12 is lower than the top of the plasma generator 3 .

[0039] In some specific embodiments of the present invention, a distance L1 between the top of the cylindrical structure 11 and the top of the plasma processing chamber 2 is equal to 10 mm.

[0040] In some embodiments of the present invention, reference Figure 2 and Figure 3 The width L2 of the projection of the annular structure in the radial direction of the cylindrical structure is not greater than 10 mm, so as to improve the shielding efficiency of the external magnetic field and avoid affecting the heat dissipation of the plasma processing chamber 2.

[0041] In some embodiments of the utility model, the cylindrical structure is provided with a plurality of heat dissipation parts penetrating the cylindrical structure, and the heat dissipation parts include at least one of a hole structure, a slit segment structure, a square structure, a triangular structure and an arc structure, so as to avoid the problem of uneven heat dissipation in the plasma processing chamber after a magnetic isolation shielding cover is arranged outside the plasma processing chamber.

[0042] Figure 4 This is a schematic structural diagram of a plasma processing device according to a third embodiment of the utility model.

[0043] In some embodiments of the present invention, reference Figure 4 The heat dissipation portion is a slit segment structure 13, and the length of the slit segment structure 13 does not exceed 1 / 2 of the circumference of the tubular structure 11, and the width of the slit segment structure 13 is 10mm~20mm, so as to avoid the problem of uneven heat dissipation in the plasma processing chamber 2 after the magnetic isolation shielding cover 1 is arranged outside the plasma processing chamber 2, and at the same time, avoid the heat dissipation portion being too large to affect the shielding efficiency of the magnetic isolation shielding cover 1 against the external magnetic field.

[0044] In an embodiment of the utility model, the length of the slit segment structure 13 is the distance between the two ends of the slit segment structure 13 along the circumference of the plasma processing chamber 2, and the width of the slit segment structure 13 is the distance between the two ends of the slit segment structure 13 along the height direction of the plasma processing chamber.

[0045] Figure 5 It is a schematic diagram of the assembly of a magnetic isolation shielding cover in a plasma processing device according to a fourth embodiment of the utility model.

[0046] In some embodiments of the present invention, reference Figure 1 , Figure 2 , Figure 4 and Figure 5 The magnetic isolation shielding cover 1 includes a first isolation part 101 and a second isolation part 102, and the two circumferential side ends of the first isolation part 101 are respectively abutted against the two circumferential side ends of the second isolation part 102 to be arranged outside the plasma processing chamber 2, that is, the magnetic isolation shielding cover 1 is divided into two along the height direction of the magnetic isolation shielding cover 1, so that it is simpler and more convenient to install the magnetic isolation shielding cover 1 outside the plasma processing chamber 2, and it is also convenient to fit the cylindrical structure 11 with the outer wall of the plasma processing chamber 2, which is beneficial to improve the shielding efficiency of the magnetic isolation shielding cover 1 against the external magnetic field and reduce the interference of the external magnetic field on the plasma in the plasma processing chamber 2.

[0047] In some embodiments of the present invention, reference Figure 5 The cylindrical structure 11 is also provided with a plurality of threaded through holes 15 , and the cylindrical structure 11 is fixed to the plasma processing chamber 2 by screws passing through the threaded through holes 15 on the cylindrical structure 11 and the threaded through holes on the plasma processing chamber 2 .

[0048] In some embodiments of the present invention, reference Figure 5 The first isolating portion 101 and the second isolating portion 102 are both semicircular ring structures, and the two circumferential side ends of the first isolating portion 101 are respectively abutted against the two circumferential side ends of the second isolating portion 102 to form the cylindrical structure 11.

[0049] Figure 6 for Figure 2 A schematic structural diagram of a first isolation portion in a plasma processing device is shown.

[0050] In other embodiments of the present invention, reference Figure 2 and Figure 6 The first isolating part and the second isolating part have the same structure. The first isolating part includes a main body 111 and a bent part 112 connected to each other. Both the main body 111 and the bent part 112 are semicircular ring structures. The two side ends of the main body 111 of the first isolating part are respectively abutted against the two side ends of the main body 111 of the second isolating part to form the cylindrical structure 11. The two side ends of the bent part 112 of the first isolating part are respectively abutted against the two side ends of the bent part 112 of the second isolating part to form the annular structure 12.

[0051] Figure 7 for Figure 5 FIG. 1 is a schematic diagram of the assembly of a magnetic isolation shield in a plasma processing device. FIG.

[0052] In some embodiments of the present invention, reference Figure 7 The plasma processing device further comprises a fixing member 4, the fixing member 4 comprises a vertical portion 41 and a horizontal portion 42, the horizontal portion 42 and the vertical portion 41 are vertically arranged to form an L-shaped structure, the horizontal portion 42 is fixed to the top of the plasma processing chamber 2 by screws 43 passing through the threaded through holes on the horizontal portion 42 and the threaded through holes on the top of the plasma processing chamber 2, and the vertical portion 41 is fixed to the cylindrical structure 11 by screws 43 passing through the threaded through holes on the vertical portion 41 and the threaded through holes on the cylindrical structure 11. The fixing member 4 of the L-shaped structure has a simple structure and is easy to install, so that the cylindrical structure 11 is easily fixed to the top of the plasma processing chamber 2.

[0053] In some embodiments of the present invention, the steps of installing the magnetic isolation shield include:

[0054] S1. Remove the handle and handle fixings, and unlock the lock.

[0055] S2, install the magnetic isolation shield 1, and fit the two semicircular first isolation parts 101 and the second isolation parts 102 to the outer wall of the plasma processing chamber 2, and be careful not to scratch the cables during the installation process;

[0056] S3, fix the magnetic isolation shielding cover 1, remove the original 16 countersunk screws on the top of the plasma processing chamber 2, and use the L-shaped structural fixing member 4 and the screw 43 to fix the magnetic isolation shielding cover 1 to the top of the plasma processing chamber 2, and fix the magnetic isolation shielding cover 1 to the side wall of the plasma processing chamber 2 by passing the screws through the threaded through holes 15 on the cylindrical structure 11 and the threaded through holes on the side wall of the plasma processing chamber 2;

[0057] S4. Reinstall the handle and make sure that the handle firmly fixes the magnetic isolation shielding cover.

[0058] S5. Inspection: After installation, open and close the cover 10 times to ensure that the magnetic isolation shielding cover 1 is not loose and does not interfere with other components or cables.

[0059] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A plasma processing device, characterized in that: include: a plasma processing chamber; The magnetic isolation shielding cover comprises a hollow cylindrical structure, wherein the cylindrical structure cover is arranged outside the plasma processing chamber and is arranged in close contact with the outer wall of the plasma processing chamber to isolate the interference of the external magnetic field on the plasma in the plasma processing chamber, and the height of the cylindrical structure is greater than the height of the plasma processing chamber.

2. The plasma processing equipment according to claim 1, characterized in that: It also includes a plasma generator, which is arranged at the top of the plasma processing chamber, and the diameter of the plasma generator is smaller than the diameter of the plasma processing chamber. The magnetic isolation shielding cover also includes an annular structure, one end of the annular structure is connected to the top end of the cylindrical structure, and the other end of the annular structure is extended toward the plasma generator to cover part of the top of the plasma processing chamber.

3. The plasma processing equipment according to claim 2, characterized in that: The angle between the cylindrical structure and the annular structure is 90° to 150°.

4. The plasma processing equipment according to claim 2, characterized in that: The distance between the top of the cylindrical structure and the top of the plasma processing chamber is greater than or equal to 10 mm, and the top of the magnetic isolation shield is lower than the top of the plasma generator.

5. The plasma processing equipment according to claim 2, characterized in that: The width of the projection of the annular structure in the radial direction of the cylindrical structure is not greater than 10 mm.

6. The plasma processing equipment according to claim 1, characterized in that: The cylindrical structure is provided with a plurality of heat dissipation parts penetrating the cylindrical structure, and the heat dissipation parts include at least one of a hole structure, a slit segment structure, a square structure, a triangle structure and an arc structure.

7. The plasma processing equipment according to claim 6, characterized in that: The heat dissipation portion is a slit segment structure, and the length of the slit segment structure does not exceed 1 / 2 of the circumference of the cylindrical structure, and the width of the slit segment structure is 10 mm to 20 mm.

8. The plasma processing equipment according to claim 1, characterized in that: It also includes a fixing member, which includes a transverse portion and a vertical portion, the transverse portion and the vertical portion are vertically arranged to form an L-shaped structure, the transverse portion is fixed to the top of the plasma processing chamber by screws passing through threaded holes on the transverse portion and threaded holes on the top of the plasma processing chamber, and the vertical portion is fixed to the cylindrical structure by screws passing through threaded holes on the vertical portion and threaded holes on the cylindrical structure.

9. The plasma processing equipment according to claim 1, characterized in that: The magnetic isolation shield includes a first isolation portion and a second isolation portion. Two circumferential side ends of the first isolation portion are respectively abutted against two circumferential side ends of the second isolation portion to be surrounded outside the plasma processing chamber.

10. The plasma processing equipment according to claim 1, characterized in that: The magnetic isolation shielding cover is a nickel-iron alloy isolation screen cover, and / or the magnetic isolation shielding cover is provided with a grounding wire.

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