Single crystal growth device of semiconductor material

Abstract

The utility model discloses a single crystal growth device of a semiconductor material, and belongs to the technical field of crystal growth. The utility model discloses a single crystal growth device for a semiconductor material. The single crystal growth device comprises a growth furnace, a crucible and a crystal bar, the crucible is positioned in the growth furnace; the first fixing frame is fixedly connected with the growth furnace; the first lead screw is rotationally connected with the first fixing frame; the first motor is fixedly connected with the first fixing frame, and a driving shaft of the first motor is fixedly connected with the first lead screw; the first sliding block is vertically and slidably connected with the first fixing frame, and the interior of the first sliding block is in threaded connection with the first lead screw; the second fixing frame is fixedly connected with the growth furnace; the second lead screw is rotationally connected with the second fixing frame; the second sliding block is vertically and slidably connected with the second fixing frame, and the interior of the second sliding block is in threaded connection with the second lead screw. The single crystal growth device for the semiconductor material has the beneficial effect that the semiconductor material can be conveniently taken out.

Description

Technical Field

[0001] The present application relates to the technical field of crystal growth, and in particular to a single crystal growth device for semiconductor materials. Background Art

[0002] Silicon carbide single crystal material is a representative of the third generation of wide bandgap semiconductor materials. It has the characteristics of wide bandgap, high thermal conductivity, high breakdown electric field, and high radiation resistance. It is expected to break through the development bottleneck of the first and second generation semiconductor material application technology. It is mainly used in semiconductor lighting, power electronic devices, lasers and detectors and other fields.

[0003] In the related art, the method for growing silicon carbide single crystals is physical vapor deposition (PVT), the main principle of which includes directly sublimating silicon carbide powder into gas at a temperature above 2100°C and a low pressure environment, and transferring it from the high temperature area to the seed crystal in the lower temperature area along the temperature gradient to deposit crystals. However, when the existing crystal growth furnace is used, after the crystal is placed in the growth furnace for growth and cultivation, it is inconvenient to take the grown crystal growth ring out of the growth furnace, which leads to a decrease in the overall cultivation efficiency when cultivating the crystal.

[0004] Therefore, a single crystal growth apparatus having semiconductor material that can be easily removed is provided. Utility Model Content

[0005] The content of this application is used to introduce concepts in a brief form, which will be described in detail in the detailed implementation section below. The content of this application is not intended to identify the key features or essential features of the technical solution claimed for protection, nor is it intended to limit the scope of the technical solution claimed for protection.

[0006] In order to solve the technical problems mentioned in the above background technology part, some embodiments of the present application provide a single crystal growth device of semiconductor material, including: a growth furnace, a crucible and a crystal rod; the crucible is located in the growth furnace; a first fixed frame, fixedly connected to the growth furnace; a first lead screw, rotatably connected to the first fixed frame; a first motor, fixedly connected to the first fixed frame, and its drive shaft is fixedly connected to the first lead screw; a first slider, vertically slidably connected to the first fixed frame, and its interior is threadedly connected to the first lead screw; a second fixed frame, fixedly connected to the growth furnace; a second lead screw, rotatably connected to the second fixed frame; a second slider, vertically slidably connected to the second fixed frame, and its interior is threadedly connected to the second lead screw; a lifting plate, whose two ends are respectively fixed to the first slider and the second slider; a transmission member, used to drive the second lead screw to rotate; a driving member, installed on the lifting plate, used to drive the crystal rod to rotate.

[0007] The first motor drives the first lead screw to rotate, the first lead screw drives the second lead screw to rotate through the transmission member, the first lead screw drives the first slider to move, the second lead screw drives the second slider to move, thereby driving the lifting plate to move, thereby facilitating the removal of the crystal rod.

[0008] Furthermore, the first fixing frame is provided with a first sliding groove extending along the height direction of the first fixing frame; and the first sliding block moves along the first sliding groove.

[0009] Furthermore, the second fixing frame is provided with a second sliding groove extending along the height direction of the second fixing frame; and the second sliding block moves along the second sliding groove.

[0010] Furthermore, the transmission member includes: a first synchronous wheel fixedly connected to the first lead screw; a second synchronous wheel fixedly connected to the second lead screw; and a synchronous belt, with both ends respectively sleeved on the first synchronous wheel and the second synchronous wheel.

[0011] Furthermore, the driving member includes: a guide ring fixedly connected to the growth furnace; a first slip ring vertically slidably connected to the guide ring; and a first rotating shaft circumferentially rotatably connected to the first slip ring.

[0012] Furthermore, the first slip ring is located at the lower end of the lifting plate and is fixedly connected to the lifting plate.

[0013] Furthermore, the crystal rod is located at the lower end of the first rotating shaft and is fixedly connected to the first rotating shaft.

[0014] Furthermore, the driving member also includes: a second motor, which is fixedly connected to the lifting plate, and a driving shaft of the second motor is fixed to the first rotating shaft.

[0015] Furthermore, the guide ring is provided with a first guide groove extending axially along the guide ring; and the first slip ring moves along the first guide groove.

[0016] Furthermore, the first slip ring is provided with a second guide groove extending along the circumference of the first slip ring; and the first rotating shaft rotates along the second guide groove.

[0017] The beneficial effect of the present application is that it provides a single crystal growth device for semiconductor materials that is particularly convenient for removal. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting a part of this application are used to provide a further understanding of this application, so that other features, purposes and advantages of this application become more obvious. The illustrative embodiment drawings and their descriptions of this application are used to explain this application and do not constitute an improper limitation on this application.

[0019] In addition, throughout the drawings, the same or similar reference numerals represent the same or similar elements. It should be understood that the drawings are schematic and that the components and elements are not necessarily drawn to scale.

[0020] In the attached picture:

[0021] Figure 1 is an overall schematic diagram according to an embodiment of the present application;

[0022] Figure 2 It is a structural schematic diagram of a part of the embodiment, mainly showing the structure of the lifting plate;

[0023] Figure 3 yes Figure 2 The enlarged view of part A mainly shows the structure of the first slip ring and the guide ring.

[0024] Reference numerals:

[0025] 100. Single crystal growth device for semiconductor material; 101. Growth furnace; 102. Crucible; 103. Crystal rod; 104. Lifting plate; 105. First fixed frame; 105a. First slide groove; 106. First lead screw; 107. First motor; 108. First slider; 109. Second fixed frame; 109a. Second slide groove; 110. Second lead screw; 112. Second slider; 113. First synchronous wheel; 114. Second synchronous wheel; 115. Synchronous belt; 116. Guide ring; 116a. First guide groove; 117. First slip ring; 117a. Second guide groove; 118. First rotating shaft; 119. Second motor. DETAILED DESCRIPTION

[0026] Embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although certain embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided to provide a more thorough and complete understanding of the present disclosure. It should be understood that the drawings and embodiments of the present disclosure are only for exemplary purposes and are not intended to limit the scope of protection of the present disclosure.

[0027] It should also be noted that, for ease of description, only the parts related to the invention are shown in the drawings. In the absence of conflict, the embodiments and features in the embodiments of the present disclosure can be combined with each other.

[0028] It should be noted that the concepts such as "first" and "second" mentioned in the present disclosure are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0029] It should be noted that the modifications of "one" and "plurality" mentioned in the present disclosure are illustrative rather than restrictive, and those skilled in the art should understand that unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0030] The present disclosure will be described in detail below with reference to the accompanying drawings and in conjunction with embodiments.

[0031] Reference Figure 1-3 A single crystal growth device 100 of semiconductor material includes: a growth furnace 101, a crucible 102, a crystal rod 103, a lifting plate 104, a lifting member for driving the lifting plate 104 to move, a transmission member, and a driving member for driving the crystal rod 103 to rotate. The crucible 102 is located in the growth furnace 101, and a spiral heating rod is provided on the crucible 102.

[0032] The lifting member is used for lifting and lowering the lifting plate 104, and includes: a first fixed frame 105, a first lead screw 106, a first motor 107, a first slider 108, a second fixed frame 109, a second lead screw 110, and a second slider 112. The first fixed frame 105 is fixedly connected to the growth furnace 101. The first lead screw 106 is rotatably connected to the first fixed frame 105. The first motor 107 is fixedly connected to the first fixed frame 105, and the driving shaft of the first motor 107 is fixedly connected to the first lead screw 106. The first slider 108 is vertically slidably connected to the first fixed frame 105, and the interior of the first slider 108 is threadedly connected to the first lead screw 106. Specifically, the first fixed frame 105 is provided with a first slide groove 105a extending along the height direction of the first fixed frame 105, and the first slider 108 moves along the first slide groove 105a.

[0033] The second fixing frame 109 is fixedly connected to the growth furnace 101. The second lead screw 110 is rotatably connected to the second fixing frame 109. The second slider 112 is vertically slidably connected to the second fixing frame 109, and the second slider 112 is threadedly connected to the second lead screw 110. Specifically, the second fixing frame 109 is provided with a second slide groove 109a extending along the height direction of the second fixing frame 109, and the second slider 112 moves along the second slide groove 109a. The two ends of the lifting plate 104 are fixed to the first slider 108 and the second slider 112 respectively.

[0034] The transmission member is used to drive the second lead screw 110 to rotate, and includes: a first synchronous wheel 113, a second synchronous wheel 114, and a synchronous belt 115. The first synchronous wheel 113 is fixedly connected to the first lead screw 106. The second synchronous wheel 114 is fixedly connected to the second lead screw 110. The two ends of the synchronous belt 115 are respectively sleeved on the first synchronous wheel 113 and the second synchronous wheel 114. The first motor 107 drives the first lead screw 106 to rotate, the first lead screw 106 drives the first synchronous wheel 113 to rotate, the first synchronous wheel 113 drives the second synchronous wheel 114 to rotate through the synchronous belt 115, the second synchronous wheel 114 drives the second lead screw 110 to rotate, the first slider 108 moves along the first slide groove 105a, and the second slider 112 moves along the second slide groove 109a. Therefore, the rotation of the first lead screw 106 drives the first slider 108 to move, and the rotation of the second lead screw 110 drives the second slider 112 to move, thereby driving the lifting plate 104 to move, so as to facilitate the removal of the crystal rod 103.

[0035] The driving member is used to drive the rotation of the crystal rod 103, and includes: a guide ring 116, a first slip ring 117, a first rotating shaft 118, and a second motor 119. The guide ring 116 is fixedly connected to the growth furnace 101. The first slip ring 117 is vertically slidably connected to the guide ring 116. Specifically, the guide ring 116 is provided with a first guide groove 116a extending along the axial direction of the guide ring 116, and the first slip ring 117 moves along the first guide groove 116a. The first rotating shaft 118 is circumferentially rotatably connected to the first slip ring 117. Specifically, the first slip ring 117 is provided with a second guide groove 117a extending along the circumference of the first slip ring 117, and the first rotating shaft 118 rotates along the second guide groove 117a. The first slip ring 117 is located at the lower end of the lifting plate 104 and is fixedly connected to the lifting plate 104. The second motor 119 is fixedly connected to the lifting plate 104, and the driving shaft of the second motor 119 is fixed to the first rotating shaft 118. The crystal rod 103 is located at the lower end of the first rotating shaft 118 and is fixedly connected to the first rotating shaft 118 .

[0036] Working process: semiconductor material is placed in the crucible 102 , the second motor 119 drives the first rotating shaft 118 to rotate, the rotation of the first rotating shaft 118 drives the crystal rod 103 to rotate, and then the crucible 102 is heated by the spiral heating rod, so that the raw material can be vaporized and rise, and then crystallized on the crystal rod 103 . After crystallization, the first motor 107 drives the first lead screw 106 to rotate, the first lead screw 106 drives the first synchronous wheel 113 to rotate, the first synchronous wheel 113 drives the second synchronous wheel 114 to rotate through the synchronous belt 115, the rotation of the second synchronous wheel 114 drives the second lead screw 110 to rotate, the first slider 108 moves along the first slide groove 105a, and the second slider 112 moves along the second slide groove 109a. Therefore, the rotation of the first lead screw 106 drives the first slider 108 to move, and the rotation of the second lead screw 110 drives the second slider 112 to move, thereby driving the lifting plate 104 to move, the movement of the lifting plate 104 drives the second motor 119 to move, the movement of the second motor 119 drives the first rotating shaft 118 to move, and the movement of the first rotating shaft 118 drives the movement of the crystal rod 103 to facilitate the removal of the crystal rod 103.

[0037] The above descriptions are only some preferred embodiments of the present disclosure and an explanation of the technical principles used. Those skilled in the art should understand that the scope of the invention involved in the embodiments of the present disclosure is not limited to the technical solutions formed by a specific combination of the above-mentioned technical features, but should also cover other technical solutions formed by any combination of the above-mentioned technical features or their equivalent features without departing from the above-mentioned inventive concept. For example, the above-mentioned features are replaced with the technical features with similar functions disclosed in the embodiments of the present disclosure (but not limited to) and the technical solutions formed.

Claims

1. A single crystal growth device for semiconductor material, comprising: A growth furnace, a crucible and a crystal rod; the crucible is located in the growth furnace; Features: The single crystal growth device of the semiconductor material further comprises: A first fixed frame, fixedly connected to the growth furnace; A first lead screw, rotatably connected to the first fixed frame; A first motor is fixedly connected to the first fixing frame, and a driving shaft thereof is fixedly connected to the first lead screw; A first sliding block is vertically slidably connected to the first fixing frame, and its interior is threadedly connected to the first lead screw; A second fixed frame, fixedly connected to the growth furnace; A second lead screw is rotatably connected to the second fixed frame; The second slider is vertically slidably connected to the second fixing frame, and its interior is threadedly connected to the second lead screw; the transmission member is used to drive the second lead screw to rotate; The lifting plate has two ends respectively fixed to the first slider and the second slider; The driving member is installed on the lifting plate and is used to drive the rotation of the crystal rod.

2. The single crystal growth device of semiconductor material according to claim 1, characterized in that: The first fixing frame is provided with a first sliding groove extending along the height direction of the first fixing frame; The first sliding block moves along the first sliding groove.

3. The single crystal growth device of semiconductor material according to claim 2, characterized in that: The second fixing frame is provided with a second sliding groove extending along the height direction of the second fixing frame; The second sliding block moves along the second sliding groove.

4. The single crystal growth device of semiconductor material according to claim 3, characterized in that: The transmission member comprises: A first synchronous wheel, fixedly connected to the first lead screw; A second synchronous wheel, fixedly connected to the second lead screw; The two ends of the synchronous belt are respectively sleeved on the first synchronous wheel and the second synchronous wheel.

5. The single crystal growth device of semiconductor material according to claim 4, characterized in that: The driving member comprises: A guide ring, fixedly connected to the growth furnace; A first slip ring, vertically slidably connected to the guide ring; The first rotating shaft is circumferentially rotatably connected to the first slip ring.

6. The single crystal growth device of semiconductor material according to claim 5, characterized in that: The first slip ring is located at the lower end of the lifting plate and is fixedly connected to the lifting plate.

7. The single crystal growth device of semiconductor material according to claim 6, characterized in that: The crystal rod is located at the lower end of the first rotating shaft and is fixedly connected to the first rotating shaft.

8. The single crystal growth device of semiconductor material according to claim 7, characterized in that: The driving member also includes: The second motor is fixedly connected to the lifting plate, and a driving shaft of the second motor is fixed to the first rotating shaft.

9. The single crystal growth device of semiconductor material according to claim 8, characterized in that: The guide ring is provided with a first guide groove extending along the axial direction of the guide ring; The first slip ring moves along the first guide groove.

10. The single crystal growth device of semiconductor material according to claim 9, characterized in that: The first slip ring is provided with a second guide groove extending along the circumference of the first slip ring; The first rotating shaft rotates along the second guiding groove.

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