1results about How to "No mixing" patented technology

This invention relates to a wafer processing method for etching two metals within the same etching chamber. It incorporates wafer cleaning and spin-drying between the two metal etching processes to ensure the cleanliness of the chamber. Simultaneously, by controlling the wafer rotation speed and the recovery tray rotation speed, a gradient is created between the positions L1 and L3 where the etching solution is splashed onto the recovery tray during the two etching processes and the position L2 where deionized water is splashed onto the recovery tray during the intermediate cleaning process. In step four, L2 is greater than L1 in step two, ensuring that the deionized water completely covers and cleans the first etching solution on the recovery tray. In step six, L3 is less than L1 in step two, so even if a trace amount of the first etching solution remains between L1 and L2, sufficient space exists between L3 and L1 where the second etching solution is splashed onto the recovery tray, preventing mixing of the two solutions. Furthermore, this invention does not require further modifications to the equipment structure, and the process flow is more seamless.