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30results about How to "Reduce lateral leakage" patented technology

OLED (organic light-emitting diode) display device and manufacture method thereof

The application discloses an OLED (organic light-emitting diode) display device and a manufacture method thereof; the OLED display device comprises a substrate, an anode layer, a pixel definition layer, a hole injection layer, a hole transport layer, a light-emitting layer, an electronic transport layer, an electronic injection layer, spacer pillars, passivating pillars positioned on the spacer pillars, and a cathode layer, wherein conductive pillars are electrically connected to the cathode layer. By electrically connecting the conductive pillars to the cathode layer, it is equivalent that a conductive resistor is connected parallelly to the cathode layer, resistance of the cathode layer is decreased, voltage drop of the cathode layer is decreased accordingly, and the OLED display device can provide more uniform displaying at the premise of not increasing the thickness of the cathode layer or decreasing the light transmittance of the cathode layer. With the presence of the passivating pillars, lateral leaking current between adjacent light-emitting pixels is decreased, the problem of brightness possessing by pixels is avoided, color mixing rate is deceased, and product yield is increased.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD +1

Novel tooth form of screw rod rotor of double-screw compressor

The invention discloses a novel screw rotor tooth shape of a twin screw compressor. The novel screw rotor tooth shape comprises a male rotor tooth shape and a female tooth shape, and is characterized in that each tooth shape on the end surface of the male rotor and the female rotor consists of six segments of curves in smooth connection, and the curves comprise an ellipse arc, a circular arc and an enveloping line thereof, wherein the six segments of curves of each tooth of the female rotor comprise: a tooth curve ellipse arc a2b2, a tooth curve circular arc b2c2, a tooth curve arc c2d 2, a tooth curve circular arc enveloping line d2e2, a tooth curve circular arc e2f2 and a tooth curve circular arc f2g2, wherein the curves of each tooth are connected in sequence. The six segments of curves of each tooth of the male rotor comprise a tooth curve ellipse arc enveloping line a1b1, a tooth curve circular arc enveloping line b1c1, a tooth curve pin tooth circular arc c1d1, a tooth curve circular arc d1e1, a tooth curve circular arc enveloping line e1f1and a tooth curve circular arc f1g1; and the curves of each tooth are connected in sequence. Therefore, when the tooth surfaces are in conjugate meshing, the tooth surfaces of two rotors are improved to 'belt' sealing from 'line' sealing, so as to improve the sealing effect obviously, contribute to forming a lubricating oil film and reducing tooth surface abrasion, and prolong the rotor life greatly.
Owner:NO 711 RES INST CHINA SHIPPING HEAVY IND GRP

Epitaxial substrate for electronic device and method of producing the same

An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.
Owner:DOWA ELECTRONICS MATERIALS CO LTD

Epitaxial substrate for electronic device and method of producing the same

ActiveUS20120091435A1Reduce leakage currentImprovement in lateral breakdown voltage characteristicTransistorSolid-state devicesSingle crystal substrateSingle crystal
An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same.The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.
Owner:DOWA ELECTRONICS MATERIALS CO LTD

OLED display panel, production method and electronic equipment containing same

The invention relates to an OLED display panel. The OLED display panel comprises a first electrode and a second electrode which are oppositely arranged and a laminate arranged between the first electrode and the second electrode, wherein the laminate at least comprises a first auxiliary light emitting layer and a light emitting layer which are sequentially arranged from the first electrode; the first auxiliary light emitting layer selects a host-guest doped form, a radialene compound is doped in a host material, hole injection rate is improved by utilizing stronger hole injection capacity of the radialene compound, voltage of a device is reduced, further light emitting efficiency is improved, and a horizontal leakage current phenomenon is reduced.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD +1

High-Q-value bulk acoustic wave resonator

Disclosed is a high Q-value bulk acoustic wave resonator, and the wave resonator comprises a substrate; a piezoelectric stack structure which is located on the substrate, wherein an acoustic reflection structure is arranged between the piezoelectric stack structure and the substrate; one or more high acoustic impedance annular convex structures; one or more low acoustic impedance annular convex structures; wherein the high-acoustic-impedance annular bulge structures and the low-acoustic-impedance annular bulge structures alternately surround the boundary of the piezoelectric stack structure top electrode. According to the invention, through arranging the multiple circles of annular projection structures on the boundary of the top electrode, the transverse leakage of sound waves can be effectively reduced, thereby improving the Q value of the bulk acoustic wave resonator.
Owner:武汉敏声新技术有限公司

OLED (Organic Light Emitting Diode) display device and production method thereof

The invention discloses an OLED (Organic Light Emitting Diode) display device and a production method thereof. The OLED display device comprises a substrate, anode layers, pixel defining layers, hole injecting layers, hole transmitting layers, light emitting layers, electron transporting layers, electron injecting layers, spacing pillars and blocking pillars positioned on a region beyond of the spacing pillars on pixel spaced regions; the blocking pillars at least penetrate through the hole transporting layers and the hole injecting layers. In the OLED display device provided by the invention, one spacing pillar is produced in the pixel spacing region between two adjacent light emitting pixels with different colors, and at least one of two inner angles, close to the pixel spacing region, of each blocking pillar is greater than 90 degrees, so that when organic materials such as the hole transporting layers and the hole injecting layers are evaporated, the hole transporting layers and the hole injecting layers can be broken at positions of the blocking pillars, and further transverse current leakage between a certain light-emitting pixel and the adjacent light emitting pixel is reduced when the certain light-emitting pixel is lightened; the problem of light stealing of other light-emitting pixels is solved, and the yield of the product is improved.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD +1

Groove MOSFET with terminal voltage-withstanding structure and manufacturing method of groove MOSFET

The invention brings forward a groove MOSFET with a terminal voltage-withstanding structure and a manufacturing method of the groove MOSFET. Grooves are formed in a cellular area and a terminal area of the groove MOSFET respectively. The grooves of the terminal area are at least two enclosed annular grooves which surround the cellular area. At least one annular groove, which is close to the cellular area, is an isolation ring which is connected with a zero potential. At least one annular groove, which is close to a scribing channel, is a cutoff ring which is connected with the scribing channel. According to the groove MOSFET with the terminal voltage-withstanding structure, the isolation ring is connected with the zero potential so that electric leakage can be effectively inhibited; and the cutoff ring is connected with the scribing channel so that carriers are not accumulated along the cutoff ring, and thus isolation effect and voltage-withstanding effect of the terminal voltage-withstanding structure are enhanced. According to the manufacturing method, voltage-withstanding and electric leakage problems of the groove MOSFET prepared by the three-layer photo-etching technology are solved, transverse electric leakage of the groove MOSFET is reduced, voltage withstanding of devices is enhanced, technology process is simplified and manufacturing cost is lowered without increasing technology complexity.
Owner:BYD SEMICON CO LTD

Epitaxial substrate for electronic device and method of producing the same

An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same. The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a Ba1Alb1Gac1Ind1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a Ba2Alb2Gac2Ind2N material and a second layer made of a Ba3Alb3Gac3Ind3N material having a different band gap from the first layer.
Owner:DOWA ELECTRONICS MATERIALS CO LTD

Air intake device for motorcycle

In an air intake device for motorcycle, an air cleaner having a front end formed with a main intake port is disposed between a pair of left and right main frame pieces forming a main frame. An introducing passage is formed within the main frame for capturing an incoming wind. An intake air introducing port of the introducing passage is provided at a location rearwardly of the main intake port in the main frame piece. An intake air discharge port is defined in an intermediate portion of a front portion of the main frame with respect to a motorcycle widthwise direction so as to open rearwardly and to be fluid connected with the main intake port. A sub intake port is provided in communication with the main intake port so as to introduce an intake air into the main intake port.
Owner:KAWASAKI MOTORS LTD

Air intake device for motorcycle

In an air intake device for motorcycle, an air cleaner having a front end formed with a main intake port is disposed between a pair of left and right main frame pieces forming a main frame. An introducing passage is formed within the main frame for capturing an incoming wind. An intake air introducing port of the introducing passage is provided at a location rearwardly of the main intake port in the main frame piece. An intake air discharge port is defined in an intermediate portion of a front portion of the main frame with respect to a motorcycle widthwise direction so as to open rearwardly and to be fluid connected with the main intake port. A sub intake port is provided in communication with the main intake port so as to introduce an intake air into the main intake port.
Owner:KAWASAKI MOTORS LTD

A kind of oled display device and manufacturing method thereof

The present application discloses an OLED display device and a manufacturing method thereof. The OLED display device includes a substrate, an anode layer, a pixel definition layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, an electron injection layer, and a spacer column; A passivation column located on the spacer column, the passivation column penetrates the hole injection layer, the hole transport layer, the electron transport layer and the electron injection layer; a conductive column formed on the passivation column; and a cathode layer; wherein, the conductive column and The cathode layer is electrically connected. The electrical connection between the conductive column and the cathode layer is equivalent to connecting the conductive resistance in parallel to the cathode layer, reducing the resistance of the cathode layer, thereby reducing the voltage drop of the cathode layer, and then making the OLED display device reduce the thickness of the cathode layer without increasing the thickness of the cathode layer. Based on the light transmittance of the cathode layer, the display is more uniform. In the present invention, due to the existence of passivation pillars, the lateral leakage between adjacent light-emitting pixels is reduced, the problem of stealing brightness of pixels is avoided, the occurrence of color mixing is further reduced, and the product yield is improved.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD +1

Display panel and display device

The embodiment of the invention provides a display panel and a display device. The display panel comprises three sub-pixels with different light emitting colors; in the first direction, the first sub-pixels and the second sub-pixels are alternately arranged to form a first pixel row, and the plurality of third sub-pixels are arranged to form a second pixel row; and the first sub-pixels and the second sub-pixels are alternately arranged in the second direction to form a first pixel column. The centers of the two first sub-pixels and the centers of the two second sub-pixels belonging to the two adjacent first pixel rows form a first virtual parallelogram, the sub-pixels with the same light emitting color are located at the opposite angles of the first virtual parallelogram, and a third sub-pixel is arranged in the first virtual parallelogram; the centers of four third sub-pixels belonging to two adjacent second pixel rows form a second virtual parallelogram; and a first sub-pixel or a second sub-pixel is arranged in the second virtual parallelogram. According to the invention, the display sawtooth feeling can be weakened, the mixed color cast is improved, and the sub-pixel bright risk is reduced.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD

Pixel circuit, driving method and display device

The invention provides a pixel circuit, a driving method and a display device. The pixel circuit comprises a light-emitting element, a driving circuit, a first light-emitting control circuit and a first initialization circuit. The first light-emitting control circuit controls the connection or disconnection between the driving circuit and the first electrode of the light-emitting element under the control of a light-emitting control signal; under the control of a first initial control signal, the first initialization circuit disconnect a first initial voltage line and the first electrode of the light-emitting element when the first light-emitting control circuit controls the driving circuit to be connected with the first electrode of the light-emitting element, and keeps, when the first light-emitting control circuit controls the driving circuit to be disconnected from the first electrode of the light-emitting element, a on state under the control of the first initial control signal, and controls the first initial voltage line to write the first initial voltage into the first electrode of the light-emitting element. According to the embodiment of the invention, lateral electric leakage can be effectively reduced, and a low-gray-scale damage phenomenon is improved.
Owner:BOE TECH GRP CO LTD +1

Novel tooth form of screw rod rotor of double-screw compressor

The invention discloses a novel screw rotor tooth shape of a twin screw compressor. The novel screw rotor tooth shape comprises a male rotor tooth shape and a female tooth shape, and is characterized in that each tooth shape on the end surface of the male rotor and the female rotor consists of six segments of curves in smooth connection, and the curves comprise an ellipse arc, a circular arc and an enveloping line thereof, wherein the six segments of curves of each tooth of the female rotor comprise: a tooth curve ellipse arc a2b2, a tooth curve circular arc b2c2, a tooth curve arc c2d 2, a tooth curve circular arc enveloping line d2e2, a tooth curve circular arc e2f2 and a tooth curve circular arc f2g2, wherein the curves of each tooth are connected in sequence. The six segments of curves of each tooth of the male rotor comprise a tooth curve ellipse arc enveloping line a1b1, a tooth curve circular arc enveloping line b1c1, a tooth curve pin tooth circular arc c1d1, a tooth curve circular arc d1e1, a tooth curve circular arc enveloping line e1f1and a tooth curve circular arc f1g1; and the curves of each tooth are connected in sequence. Therefore, when the tooth surfaces are in conjugate meshing, the tooth surfaces of two rotors are improved to 'belt' sealing from 'line' sealing, so as to improve the sealing effect obviously, contribute to forming a lubricating oil film and reducing tooth surface abrasion, and prolong the rotor life greatly.
Owner:中国船舶集团有限公司第七一一研究所

Display panel and display device

The invention discloses a display panel and a display device.The display panel comprises a substrate and a plurality of light-emitting devices, the light-emitting devices are located on one side of the substrate, and each light-emitting device comprises an anode and an organic light-emitting layer which are arranged in a stacked mode; the organic functional layer is positioned on one side, facing the anode, of the organic light-emitting layer; the organic functional layer comprises a first organic functional part and a second organic functional part, and the first organic functional part and the organic light-emitting layer are at least partially overlapped in the direction perpendicular to the plane where the substrate is located; in the first direction, the first organic function part is in contact with the second organic function part, the material of the first organic function part is different from that of the second organic function part, and the first direction intersects with the light emitting direction of the display panel. The material of the first organic function part is different from the material of the second organic function part, so that drift of carriers in the first direction is reduced, and the display effect is improved.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD

A trench mosfet with a terminal withstand voltage structure and its manufacturing method

The invention brings forward a groove MOSFET with a terminal voltage-withstanding structure and a manufacturing method of the groove MOSFET. Grooves are formed in a cellular area and a terminal area of the groove MOSFET respectively. The grooves of the terminal area are at least two enclosed annular grooves which surround the cellular area. At least one annular groove, which is close to the cellular area, is an isolation ring which is connected with a zero potential. At least one annular groove, which is close to a scribing channel, is a cutoff ring which is connected with the scribing channel. According to the groove MOSFET with the terminal voltage-withstanding structure, the isolation ring is connected with the zero potential so that electric leakage can be effectively inhibited; and the cutoff ring is connected with the scribing channel so that carriers are not accumulated along the cutoff ring, and thus isolation effect and voltage-withstanding effect of the terminal voltage-withstanding structure are enhanced. According to the manufacturing method, voltage-withstanding and electric leakage problems of the groove MOSFET prepared by the three-layer photo-etching technology are solved, transverse electric leakage of the groove MOSFET is reduced, voltage withstanding of devices is enhanced, technology process is simplified and manufacturing cost is lowered without increasing technology complexity.
Owner:BYD SEMICON CO LTD

Display panel, preparation method thereof and silicon-based organic light-emitting micro-display

The invention discloses a display panel, a preparation method thereof and a silicon-based organic light-emitting micro-display. The display panel comprises an underlayment substrate which is provided with at least one pixel area and a non-pixel area surrounding the pixel area on the surface thereof; a pixel limiting layer which is located on the underlayment substrate, covers the non-pixel area and exposes the opening of the pixel area; and an organic light-emitting layer and an isolation structure which are located on the underlayment substrate. The organic light-emitting layer is located in the pixel area, the isolation structure is located on the surface, away from the underlayment substrate, of the pixel limiting layer and located in the non-pixel area, and the surface, away from the underlayment substrate, of the isolation structure is a plane. According to the invention, the effect of accurately disconnecting the continuous non-pixel area part in the organic light-emitting layer is achieved.
Owner:KUNSHAN FANTAVIEW ELECTRONICS TECH CO LTD

A display panel and its preparation method, silicon-based organic light-emitting microdisplay

The invention discloses a display panel, a preparation method thereof, and a silicon-based organic light-emitting microdisplay. The display panel includes a base substrate, the surface of the base substrate is provided with at least one pixel area and a non-pixel area surrounding the pixel area; a pixel definition layer, the pixel definition layer is located on the base substrate, covers the non-pixel area, and exposes the pixel area The opening of the organic light-emitting layer and the isolation structure, the organic light-emitting layer and the isolation structure are located on the base substrate, wherein the organic light-emitting layer is located in the pixel area, and the isolation structure is located on the surface of the pixel definition layer away from the base substrate, and is located on the non-pixel area, the surface of the isolation structure away from the base substrate is a plane. The present invention achieves the effect of accurately disconnecting the continuity of the non-pixel region in the light-emitting machine layer.
Owner:KUNSHAN FANTAVIEW ELECTRONICS TECH CO LTD

Manufacturing method of OLED panel and OLED panel

The invention provides a manufacturing method of an OLED panel and the OLED panel. The manufacturing method of the OLED panel comprises the steps of manufacturing a first pixel electrode (21) and a second pixel electrode (22) in each pixel unit (2), and depositing an insulating thin film by adopting an atomic layer deposition film-forming mode, and then carrying out patterning treatment to form a pixel electrode partition insulation layer (3); filling a longitudinal part (31) of the pixel electrode partition insulation layer (3) between the first pixel electrode (21) and the second pixel electrode (22), covering the part, relatively close to the second pixel electrode (22), of the first pixel electrode (21) and the part, relatively close to the first pixel electrode (21), of the second pixel electrode (22) with two ends of a transverse part (22) separately and then manufacturing a pixel isolation layer (4); and finally printing an OLED light-emitting device (5). The resolution of the OELD panel can be improved without changing the printing accuracy so that the first pixel electrode (21) and the second pixel electrode (22) are fully insulated.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

Double-screw bilateral asymmetric rotor profile composed of nine tooth curves

The invention discloses a twin-screw bilateral asymmetric rotor molded line composed of nine tooth curves, which comprises a pair of female rotor and male rotor which are always parallel and mutually engaged, the end face molded lines of the female rotor and the male rotor are conjugate curves, the male rotor comprises three male rotor teeth which are centrosymmetric, and the male rotor comprises three male rotor teeth which are centrosymmetric. The female rotor comprises five female rotor teeth which are centrosymmetric, the tooth types of the female rotor teeth are the same and are circumferentially and uniformly distributed, the tooth type contour line of each male rotor tooth comprises nine sections of male tooth curves which are smoothly connected end to end, the female rotor comprises five female rotor teeth which are centrosymmetric, and the tooth types of the female rotor teeth are the same and are circumferentially and uniformly distributed; and the contour line between the tooth types of each female rotor tooth comprises nine female tooth curves which are smoothly connected end to end. According to the invention, rotor meshing and rotor inter-tooth volume optimal sealing performance can be met, formation of a hydrodynamic force lubricating gas film between the double screws is facilitated, transverse leakage passing through a contact line is reduced, the sealing effect can be obviously improved, tooth surface wear is reduced, and the efficiency of the compressor is improved.
Owner:湖南慧风流体科技有限公司

Methods, devices, and kits for microjet drug delivery

Described here are methods, devices, and kits for microjet drug delivery. The devices described here may be modular or non-modular. The modular devices typically include a first module having a drug reservoir and a nozzle in fluid communication with the drug reservoir and a second module having an actuator and a power supply. The power supply provides power to the actuator and when the first and second modules are coupled, the actuator is capable of acting on a dispensing member causing it to dispense a drug in liquid form from the drug reservoir via the nozzle at a velocity sufficient to penetrate skin. Other devices described include a nozzle, a reservoir in fluid communication with the nozzle, a dispensing member, and an actuator. In these devices, the nozzle has at least one feature that enhances nozzle contact with the skin in order to reduce lateral drug leakage about the nozzle.
Owner:CORIUM PHARMA SOLUTIONS INC

A kind of oled display device and manufacturing method thereof

The present application discloses an OLED display device and a manufacturing method thereof. The OLED display device includes a substrate, an anode layer, a pixel definition layer, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer and an electron injection layer, and a spacer. column; a barrier column located on an area other than the spacer column on the pixel spacing region, the barrier column at least penetrates the hole transport layer and the hole injection layer; in the OLED display device provided by the present invention, in two adjacent color Barrier columns are made on the pixel spacing area between the light-emitting pixels, and at least one of the two internal angles of the barrier column close to the pixel spacing area is greater than 90°, so that when organic materials such as hole transport layers and hole injection layers are evaporated, it is possible to The hole transport layer and the hole injection layer are disconnected at the barrier column, thereby reducing the lateral leakage between a certain light-emitting pixel and adjacent light-emitting pixels when a light-emitting pixel is lit, and preventing other light-emitting pixels from stealing light. Problems, improve product yield.
Owner:WUHAN TIANMA MICRO ELECTRONICS CO LTD +1

Display panel, preparation method thereof and display device

The invention discloses a display panel, a preparation method thereof and a display device. The display panel comprises a substrate; a pixel definition layer located on one side of the substrate, wherein the pixel definition layer comprises a plurality of pixel openings distributed in an array mode and a body part surrounding the pixel openings; a carrier layer positioned on one side, back to thesubstrate, of the pixel definition layer; wherein the carrier layer is in contact with the metal, a recess for inhibiting the transverse conduction capability of the carrier layer is formed in the carrier layer, and the orthographic projection of the trap on the substrate is overlapped with the orthographic projection of the body part on the substrate. According to the embodiment of the invention,transverse leakage flow can be reduced.
Owner:YUNGU GUAN TECH CO LTD

III-nitride transistor epitaxial structure and transistor device

The invention discloses an III-nitride transistor epitaxial structure comprising a substrate and a nucleation layer, a buffer layer, a channel layer and a barrier layer, which are sequentially stackedon the substrate, wherein the substrate comprises a plurality of groove structures and a growth window located among the groove structures; the nucleation layer is located in the growth window of thesubstrate; the buffer layer comprises a semi-polar III-nitride that is formed in a merging region and epitaxially grows along the direction of the growth window and the direction of the adjacent groove structure and a semi-polar III-nitride that is formed in the window region and epitaxially grows along the direction perpendicular to the plane where the substrate is located; the channel layer andthe barrier layer are both semi-polar III-nitrides, and the merged region and the window region both extend to the channel layer and the barrier layer. The III-nitride transistor epitaxial structurefacilitates the fabrication of enhanced HEMT devices with high electron mobility and low lateral leakage.
Owner:珠海镓未来科技有限公司

OLED panel manufacturing method and OLED panel

The invention provides an OLED panel manufacturing method and OLED panel. The method comprises: forming first (21) and second (22) pixel electrodes inside each pixel unit (2); depositing an insulation film by an atomic layer deposition method, and patternizing to form a pixel electrode isolation insulation layer (3); the pixel electrode isolation insulation layer having a longitudinal portion (31) filling between the first (21) and second (22) pixel electrodes, and a latitudinal portion (32) having both ends covering respectively a part of the first pixel electrode (21) closer to the second pixel electrode (22) and a part of the second pixel electrode (22) closer to the first pixel electrode (21); forming a pixel isolation layer (4), and printing LOED elements (5); the invention can increase OLED panel resolution without changing printing accuracy so that the first (21) and second (22) pixel electrodes are completely insulated.
Owner:SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD

Combined regenerated heat energy exchanger

The combined regenerated heat energy exchanger consists of several independent and replaceable regenerated heat energy exchanging modules interconnected together. Each of the regenerated heat energy exchanging modules includes one stuffing bed comprising one casing with openings, heat absorbing material filled inside the casing, and inlet and outlet baffles, which are set at the openings to control the flow direction of both hot and cold gas and connected to the stuffing bed tightly. The inlet and outlet baffles runs in some order, so that hot gas and cold gas flow through the heat absorbing material inside the stuffing bed alternately. The modular structure makes design and manufacture economic, and result in compact structure, easy transportation, fast assembling, less gas leakage, less hot deformation, easy maintenance, low maintenance cost, etc.
Owner:杨小明 +2

Low-dark-current high-sensitivity photoelectric detector structure and manufacturing method thereof

A low-dark-current high-sensitivity photoelectric detector structure comprises an epitaxial wafer, the epitaxial wafer comprises an InP substrate, a buffer layer, a lower ohmic contact layer, a transition layer, an absorption layer and a window layer are sequentially deposited on the InP substrate from bottom to top, and an upper ohmic contact layer and an insulating layer are arranged on the window layer; and the upper ohmic contact layer and the insulating layer are located on the same layer, and the insulating layer is divided into two parts which are located on the two sides of the upper ohmic contact layer respectively. According to the invention, the detector epitaxial wafer with the isolation groove and the low side leakage structure is prepared by adopting the MOCVD selective area epitaxial process, the complex and high-precision photoetching overlay and etching process is reduced, the process is simplified, the yield is high, and the cost is low.
Owner:全磊光电股份有限公司
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