30results about How to "Reduce lateral leakage" patented technology

An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.

An epitaxial substrate for electronic devices is provided, which can improve vertical breakdown voltage and provides a method of producing the same.

The epitaxial substrate includes a conductive SiC single crystal substrate, a buffer as an insulating layer on the SiC single crystal substrate, and a main laminate formed by epitaxially growing a plurality of Group III nitride layers on the buffer. Further, the buffer includes at least an initial growth layer in contact with the SiC single crystal substrate and a superlattice laminate having a superlattice multi-layer structure on the initial growth layer. The initial growth layer is made of a B_a1Al_b1Ga_c1In_d1N material. Furthermore, the superlattice laminate is configured by alternately stacking a first layer made of a B_a2Al_b2Ga_c2In_d2N material and a second layer made of a B_a3Al_b3Ga_c3In_d3N material having a different band gap from the first layer.

Disclosed is a high Q-value bulk acoustic wave resonator, and the wave resonator comprises a substrate; a piezoelectric stack structure which is located on the substrate, wherein an acoustic reflection structure is arranged between the piezoelectric stack structure and the substrate; one or more high acoustic impedance annular convex structures; one or more low acoustic impedance annular convex structures; wherein the high-acoustic-impedance annular bulge structures and the low-acoustic-impedance annular bulge structures alternately surround the boundary of the piezoelectric stack structure top electrode. According to the invention, through arranging the multiple circles of annular projection structures on the boundary of the top electrode, the transverse leakage of sound waves can be effectively reduced, thereby improving the Q value of the bulk acoustic wave resonator.

The invention brings forward a groove MOSFET with a terminal voltage-withstanding structure and a manufacturing method of the groove MOSFET. Grooves are formed in a cellular area and a terminal area of the groove MOSFET respectively. The grooves of the terminal area are at least two enclosed annular grooves which surround the cellular area. At least one annular groove, which is close to the cellular area, is an isolation ring which is connected with a zero potential. At least one annular groove, which is close to a scribing channel, is a cutoff ring which is connected with the scribing channel. According to the groove MOSFET with the terminal voltage-withstanding structure, the isolation ring is connected with the zero potential so that electric leakage can be effectively inhibited; and the cutoff ring is connected with the scribing channel so that carriers are not accumulated along the cutoff ring, and thus isolation effect and voltage-withstanding effect of the terminal voltage-withstanding structure are enhanced. According to the manufacturing method, voltage-withstanding and electric leakage problems of the groove MOSFET prepared by the three-layer photo-etching technology are solved, transverse electric leakage of the groove MOSFET is reduced, voltage withstanding of devices is enhanced, technology process is simplified and manufacturing cost is lowered without increasing technology complexity.

In an air intake device for motorcycle, an air cleaner having a front end formed with a main intake port is disposed between a pair of left and right main frame pieces forming a main frame. An introducing passage is formed within the main frame for capturing an incoming wind. An intake air introducing port of the introducing passage is provided at a location rearwardly of the main intake port in the main frame piece. An intake air discharge port is defined in an intermediate portion of a front portion of the main frame with respect to a motorcycle widthwise direction so as to open rearwardly and to be fluid connected with the main intake port. A sub intake port is provided in communication with the main intake port so as to introduce an intake air into the main intake port.

The invention provides a pixel circuit, a driving method and a display device. The pixel circuit comprises a light-emitting element, a driving circuit, a first light-emitting control circuit and a first initialization circuit. The first light-emitting control circuit controls the connection or disconnection between the driving circuit and the first electrode of the light-emitting element under the control of a light-emitting control signal; under the control of a first initial control signal, the first initialization circuit disconnect a first initial voltage line and the first electrode of the light-emitting element when the first light-emitting control circuit controls the driving circuit to be connected with the first electrode of the light-emitting element, and keeps, when the first light-emitting control circuit controls the driving circuit to be disconnected from the first electrode of the light-emitting element, a on state under the control of the first initial control signal, and controls the first initial voltage line to write the first initial voltage into the first electrode of the light-emitting element. According to the embodiment of the invention, lateral electric leakage can be effectively reduced, and a low-gray-scale damage phenomenon is improved.

The invention discloses a display panel and a display device.The display panel comprises a substrate and a plurality of light-emitting devices, the light-emitting devices are located on one side of the substrate, and each light-emitting device comprises an anode and an organic light-emitting layer which are arranged in a stacked mode; the organic functional layer is positioned on one side, facing the anode, of the organic light-emitting layer; the organic functional layer comprises a first organic functional part and a second organic functional part, and the first organic functional part and the organic light-emitting layer are at least partially overlapped in the direction perpendicular to the plane where the substrate is located; in the first direction, the first organic function part is in contact with the second organic function part, the material of the first organic function part is different from that of the second organic function part, and the first direction intersects with the light emitting direction of the display panel. The material of the first organic function part is different from the material of the second organic function part, so that drift of carriers in the first direction is reduced, and the display effect is improved.

The invention discloses a display panel, a preparation method thereof and a silicon-based organic light-emitting micro-display. The display panel comprises an underlayment substrate which is provided with at least one pixel area and a non-pixel area surrounding the pixel area on the surface thereof; a pixel limiting layer which is located on the underlayment substrate, covers the non-pixel area and exposes the opening of the pixel area; and an organic light-emitting layer and an isolation structure which are located on the underlayment substrate. The organic light-emitting layer is located in the pixel area, the isolation structure is located on the surface, away from the underlayment substrate, of the pixel limiting layer and located in the non-pixel area, and the surface, away from the underlayment substrate, of the isolation structure is a plane. According to the invention, the effect of accurately disconnecting the continuous non-pixel area part in the organic light-emitting layer is achieved.

The invention discloses a twin-screw bilateral asymmetric rotor molded line composed of nine tooth curves, which comprises a pair of female rotor and male rotor which are always parallel and mutually engaged, the end face molded lines of the female rotor and the male rotor are conjugate curves, the male rotor comprises three male rotor teeth which are centrosymmetric, and the male rotor comprises three male rotor teeth which are centrosymmetric. The female rotor comprises five female rotor teeth which are centrosymmetric, the tooth types of the female rotor teeth are the same and are circumferentially and uniformly distributed, the tooth type contour line of each male rotor tooth comprises nine sections of male tooth curves which are smoothly connected end to end, the female rotor comprises five female rotor teeth which are centrosymmetric, and the tooth types of the female rotor teeth are the same and are circumferentially and uniformly distributed; and the contour line between the tooth types of each female rotor tooth comprises nine female tooth curves which are smoothly connected end to end. According to the invention, rotor meshing and rotor inter-tooth volume optimal sealing performance can be met, formation of a hydrodynamic force lubricating gas film between the double screws is facilitated, transverse leakage passing through a contact line is reduced, the sealing effect can be obviously improved, tooth surface wear is reduced, and the efficiency of the compressor is improved.

A low-dark-current high-sensitivity photoelectric detector structure comprises an epitaxial wafer, the epitaxial wafer comprises an InP substrate, a buffer layer, a lower ohmic contact layer, a transition layer, an absorption layer and a window layer are sequentially deposited on the InP substrate from bottom to top, and an upper ohmic contact layer and an insulating layer are arranged on the window layer; and the upper ohmic contact layer and the insulating layer are located on the same layer, and the insulating layer is divided into two parts which are located on the two sides of the upper ohmic contact layer respectively. According to the invention, the detector epitaxial wafer with the isolation groove and the low side leakage structure is prepared by adopting the MOCVD selective area epitaxial process, the complex and high-precision photoetching overlay and etching process is reduced, the process is simplified, the yield is high, and the cost is low.