Method for controlling process temperature in semiconductor manufacturing

Abstract

The present invention provides a method for controlling process temperature in semiconductor manufacturing. The method includes detecting a temperature in a first chamber configured to process semiconductor wafers. The method also includes generating a flow of heat exchange medium in a second chamber to cool the first chamber, the second chamber being connected to the first chamber. The method also includes controlling the flow of the heat exchange medium by varying the coverage area of ​​the first ventilation unit, which allows the heat exchange medium to enter the second chamber, based on the detected temperature in the first chamber.

Description

technical field [0001] Embodiments of the invention relate to semiconductor manufacturing, and more particularly, to methods for controlling process temperatures in semiconductor manufacturing. Background technique [0002] Semiconductor devices are used in a variety of electronic applications, such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing an insulating or dielectric layer, a conductive layer, and a layer of semiconductor material over a semiconductor substrate and patterning the individual material layers using photolithography to form integrated circuits (ICs) and components on the material layers. Technological advances in IC materials and design have produced generations of ICs, where each generation has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of handling and manufacturing ICs,...

Images