Memory device, manufacturing method thereof, and electronic equipment including the same

A technology for storage devices and storage gates, applied in semiconductor devices, electric solid devices, circuits, etc., can solve the problems of reducing total resistance, increasing leakage current, increasing doping concentration, etc., and achieves reducing total series resistance, reducing resistance, The effect of increasing the doping concentration

Active Publication Date: 2020-06-09
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, it is difficult to reduce the total resistance by increasing the doping concentration of the source / drain region, because this will also increase the doping concentration in the channel region, resulting in an increase in the leakage current between the source and drain

Method used

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  • Memory device, manufacturing method thereof, and electronic equipment including the same
  • Memory device, manufacturing method thereof, and electronic equipment including the same
  • Memory device, manufacturing method thereof, and electronic equipment including the same

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Embodiment Construction

[0014] Hereinafter, embodiments of the present disclosure will be described with reference to the drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the present disclosure. Also, in the following description, descriptions of well-known structures and techniques are omitted to avoid unnecessarily obscuring the concepts of the present disclosure.

[0015] Various structural schematic diagrams according to embodiments of the present disclosure are shown in the accompanying drawings. The figures are not drawn to scale, with certain details exaggerated and possibly omitted for clarity of presentation. The shapes of the various regions and layers shown in the figure, as well as their relative sizes and positional relationships are only exemplary, and may deviate due to manufacturing tolerances or technical limitations in practice, and those skilled in the art will Regions / layers with different shapes, ...

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Abstract

Disclosed are a storage device, a manufacturing method thereof, and electronic equipment including the storage device. According to an embodiment, the memory device may include a plurality of columnar active regions formed on the substrate and extending upward from the substrate; A multi-layer gate electrode layer, wherein each gate electrode layer faces each columnar active region through a stack of storage gate dielectrics, wherein the columnar active region includes a first doped region opposite to each gate electrode layer and located in each first The second doping region on opposite sides of the doping region, wherein the doping characteristic in the first doping region is different from that in the second doping region.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to a storage device based on a vertical type device, a manufacturing method thereof, and an electronic device including the storage device. Background technique [0002] In a horizontal type device such as a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), the source, gate and drain are arranged in a direction substantially parallel to the surface of the substrate. Due to this arrangement, the horizontal type device cannot be easily further scaled down. Unlike this, in a vertical type device, the source, gate, and drain are arranged in a direction substantially perpendicular to the substrate surface. Therefore, vertical devices are easier to scale down than horizontal devices. [0003] In a memory device based on a vertical device, there are memory cells stacked such that their respective resistances are connected in series. Then, the total resistance increa...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L27/11556H01L27/11582
CPCH10B41/27H10B43/27
Inventor朱慧珑
OwnerINST OF MICROELECTRONICS CHINESE ACAD OF SCI