Light-transmitting film photovoltaic module and preparation method thereof

Abstract

The invention relates to a light-transmitting film photovoltaic module and a preparation method thereof. The light-transmitting film photovoltaic module comprises a glass substrate, a transparent front electrode layer, a battery layer, a back contact layer and a transparent back electrode layer which are stacked in sequence. Each dead zone comprises a P1 laser groove, a P2 laser groove and a P3 laser groove; the P1 laser groove penetrates through the transparent front electrode layer, the battery layer and the back contact layer; the P2 laser groove penetrates through the battery layer and the back contact layer; the P3 laser groove penetrates through the battery layer, the back contact layer and the transparent back electrode layer; wherein the P1 laser groove, the P2 laser groove and the P3 laser groove are all light-transmitting areas; the distance between the P1 laser groove and the P2 laser groove is 0; and the distance between the P2 laser groove and the P3 laser groove is 0. According to the light-transmitting film photovoltaic module provided by the invention, the light-transmitting uniformity and the light-transmitting effect of the module can be improved, the appearance yield can be improved, the process time of the module can be shortened, the process cost can be reduced, and the efficiency of the module can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of thin-film photovoltaic modules, and in particular to a light-transmitting thin-film photovoltaic module and a preparation method thereof. Background Art

[0002] The structure of conventional opaque thin-film photovoltaic modules is as follows: Figure 1 As shown, it includes a glass substrate 101, a front electrode 102, a battery layer (pn junction) 103, a back contact layer 104 and a back electrode 105, wherein one of the front electrode 102 and the back electrode 105 is an opaque metal electrode, such as a copper indium gallium selenide (CIGS) battery metal molybdenum electrode. In addition, the laser integration process of conventional thin-film components mainly uses three laser etching processes to form a battery inline structure, a P1 laser groove 106, a P2 laser groove 107 and a P3 laser groove 108; the P1-P3 area is called a dead zone, and for conventional opaque components, the smaller the dead zone width, the better (mainly affected by the accuracy of the laser equipment, currently controlled at a minimum of 100μm to 120μm); in addition, the dead zone is opaque (occupied by the opaque battery layer 103 and the back electrode 105), and does not contribute to the light transmission performance of the component. Therefore, conventional thin-film photovoltaic modules and their inline integration processes cannot achieve light transmittance inside the cells, and are not suitable for application scenarios such as building roofs and curtain walls, or car skylights that require lighting.

[0003] The current light-transmitting component process is based on the conventional light-impermeable component process by adding laser or chemical etching process, such as Figure 2 As shown, the light transmission of the module is achieved through the light-transmitting tape 111, and the light-transmitting tape 111 divides the module into several sub-cells 109. However, this process has the following problems: (1) The light transmission is uneven; (2) The power generation efficiency of the module is low. On the one hand, the existing etching process will damage the battery layer at the edge of the etching line or introduce a short-circuit point, which will reduce the efficiency of the module; on the other hand, the module integration process and the light transmission process are unreasonable, and the optimization of the module efficiency is not considered; (3) The module has appearance and safety hazards. The short-circuit point formed at the edge of the laser etching line will burn through and form a burn spot, further reducing the efficiency of the module and affecting the appearance of the module; in addition, the burning process of the short-circuit point will further cause the module to spontaneously combust, causing safety hazards. (4) The laser etching process takes a long time and has a high processing cost.

[0004] Therefore, a solution is needed to improve the light transmittance uniformity and light transmittance effect of the component, improve the appearance yield, and at the same time reduce the process time of the component, reduce the process cost, and improve the efficiency of the component. Summary of the invention

[0005] Therefore, the present invention provides a light-transmitting thin-film photovoltaic module and a preparation method thereof to solve the problems in the prior art of uneven light transmittance of light-transmitting thin-film photovoltaic modules, low module power generation efficiency, appearance and safety hazards of the modules, long module preparation process time and high process cost.

[0006] The present invention provides a light-transmitting thin-film photovoltaic module, comprising:

[0007] A glass substrate, a transparent front electrode layer, a battery layer, a back contact layer and a transparent back electrode layer stacked in sequence;

[0008] A plurality of dead zones, each of which comprises a P1 laser groove, a P2 laser groove and a P3 laser groove; the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer; the P2 laser groove penetrates the battery layer and the back contact layer; the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer;

[0009] Among them, the P1 laser groove, the P2 laser groove and the P3 laser groove are all light-transmitting areas; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0.

[0010] Optionally, the P1 laser groove is filled with a transparent protective paint;

[0011] The P2 laser groove is filled with the same material as the transparent back electrode layer;

[0012] The P3 laser tank is filled with air.

[0013] Optionally, the width of the dead zone is 0.6 mm to 6 mm;

[0014] The width of the P1 laser groove is 0.2 mm to 2 mm;

[0015] The width of the P2 laser groove is 0.2 mm to 2 mm;

[0016] The width of the P3 laser groove is 0.2 mm to 2 mm.

[0017] Optionally, a plurality of parallel first light-transmitting strips, wherein the first light-transmitting strips are connected by the dead zones located on the same straight line;

[0018] A plurality of parallel second light-transmitting strips, wherein the second light-transmitting strips are perpendicular to the first light-transmitting strips;

[0019] The light-transmitting thin-film photovoltaic assembly further includes a plurality of sub-cells; the sub-cells are separated by the first light-transmitting strip and the second light-transmitting strip.

[0020] Optionally, the width of the sub-battery is 1 mm to 5 mm;

[0021] The width of the first light-transmitting band is 0.6 mm to 6 mm;

[0022] The width of the second light-transmitting band is 0.6 mm to 6 mm.

[0023] The present invention also provides a method for preparing a light-transmitting thin-film photovoltaic module, comprising the following steps:

[0024] Providing a glass substrate, on which a transparent front electrode layer, a battery layer and a back contact layer are sequentially deposited;

[0025] forming a P1 laser groove, wherein the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer;

[0026] forming a P2 laser groove, wherein the P2 laser groove penetrates the battery layer and the back contact layer;

[0027] forming a transparent back electrode layer on a side of the back contact layer facing away from the battery layer;

[0028] A P3 laser groove is formed, wherein the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer; the P1 laser groove, the P2 laser groove and the P3 laser groove constitute a dead zone;

[0029] Among them, the P1 laser groove, the P2 laser groove and the P3 laser groove are all light-transmitting areas; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0.

[0030] Optionally, the step of forming the P1 laser groove includes:

[0031] Using a first laser to etch the transparent front electrode layer, the battery layer and the back contact layer to form the P1 laser groove;

[0032] The P1 laser groove is filled with a transparent protective lacquer.

[0033] Optionally, the step of forming the P2 laser groove includes:

[0034] Etching the battery layer and the back contact layer using a second laser to form the P2 laser groove;

[0035] In the step of forming a transparent back electrode layer on the side of the back contact layer facing away from the battery layer, the transparent back electrode layer also extends into and fills the P2 laser groove.

[0036] Optionally, the step of forming the P3 laser groove includes:

[0037] The battery layer, the back contact layer and the transparent back electrode layer are etched with a third laser to form the P3 laser groove.

[0038] Optionally, the wide spot diameter of the first laser is 0.2 mm to 2 mm, and the wavelength is 1064 nm;

[0039] The wide spot diameter of the second laser is 0.2 mm to 2 mm, and the wavelength is 532 nm;

[0040] The third laser has a wide spot diameter of 0.2 mm to 2 mm and a wavelength of 532 nm.

[0041] Optionally, after the step of forming the P3 laser groove, the step further includes:

[0042] Using a fourth laser to etch the battery layer, the back contact layer and the transparent back electrode layer to form a second light-transmitting band;

[0043] The dead zones located on the same straight line are connected to form a first light-transmitting band, and the second light-transmitting band is perpendicular to the first light-transmitting band.

[0044] The technical solution of the present invention has the following advantages:

[0045] (1) The light-transmitting thin-film photovoltaic module provided by the present invention uses a transparent front electrode layer and a transparent back electrode layer, and sets the light-transmitting P1 laser groove, P2 laser groove and P3 laser groove to 0 spacing, and ensures that they do not overlap with each other. On the one hand, the light transmission uniformity and light transmission effect of the module can be improved, and the appearance yield can be improved. At the same time, the process time of the module can be reduced and the process cost can be reduced. On the other hand, the P1 to P3 laser grooves are used together as a dead zone, which increases the width of the dead zone and reduces the width of the sub-cell, thereby improving the efficiency of the module.

[0046] (2) The light-transmitting thin-film photovoltaic module provided by the present invention uses a transparent front electrode layer and a transparent back electrode layer, and sets the spacing between the light-transmitting P1 laser groove, P2 laser groove and P3 laser groove to 0, and increases the P1 laser groove, P2 laser groove and P3 laser groove to form a first light-transmitting band; the first light-transmitting band and the second light-transmitting band perpendicular to the first light-transmitting band jointly realize the light transmission of the module; on the one hand, the light transmission uniformity and light transmission effect of the module can be improved; on the other hand, the light transmittance of the module is jointly realized by the second light-transmitting band and the first light-transmitting band, and the formation of the first light-transmitting band is derived from the P1 / P2 / P3 laser etching process of the conventional non-light-transmitting module (only the spot diameter is increased, and no additional processing time is added); the number and time of the laser etching perpendicular to P1 / P2 / P3 can be reduced by half, thereby reducing the processing time of the light-transmitting module and thereby reducing the module cost.

[0047] (3) The light-transmitting thin-film photovoltaic module provided by the present invention increases the dead zone width (the width of the P1 / P2 / P3 laser groove is 0.6mm to 6mm) and reduces the sub-cell width (1mm to 5mm). While achieving light transmittance of the P1 / P2 / P3 laser grooves, it optimizes the integrated process of the light-transmitting module and improves the module efficiency.

[0048] (4) The method for preparing a light-transmitting thin-film photovoltaic module provided by the present invention is used to prepare the light-transmitting thin-film photovoltaic module provided by the present invention. By using a transparent front electrode layer and a transparent back electrode layer, and setting the spacing between the light-transmitting P1 laser groove, P2 laser groove and P3 laser groove to 0, and ensuring that they do not overlap with each other, on the one hand, the light transmission uniformity and light transmission effect of the module can be improved, and the appearance yield can be improved, while the process time of the module can be reduced and the process cost can be reduced; on the other hand, the P1 to P3 laser grooves are used together as a dead zone, the width of the dead zone is increased, and the width of the sub-cell is reduced, which can improve the efficiency of the module.

[0049] (5) The preparation method of the light-transmitting thin-film photovoltaic module provided by the present invention adopts a transparent back electrode structure. The transparent back electrode layer is a transparent conductive oxide, which is similar to the transparent front electrode layer. Therefore, in the process of forming the second light-transmitting band, the fourth laser will not be absorbed by the transparent back electrode layer (mainly transmitted). Therefore, the transparent conductive film at the position of the first light-transmitting band will not be vaporized and recondensed, and no short-circuit point will be introduced (this is different from the conventional metal film layer. The metal will absorb the fourth laser energy to vaporize and recondense on the inner wall of the laser groove to form a short-circuit point). While further improving the efficiency of the module, it eliminates the further influence of the module burn-through and burn spots on the module efficiency and the impact on the appearance of the module, and can also eliminate the risk of spontaneous combustion of the module due to burn spots. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0051] Figure 1 A schematic diagram of the structure of a conventional thin-film photovoltaic module in the prior art;

[0052] Figure 2 A schematic top view of the structure of a conventional thin-film photovoltaic module in the prior art;

[0053] Figure 3 This is a schematic structural diagram of a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention;

[0054] Figure 4 A schematic top view of the structure of a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention;

[0055] Figure 5 A schematic diagram of a current path inside a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention;

[0056] Figure 6 A schematic diagram of a process for preparing a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention;

[0057] Figure 7 The conventional preparation process of the cadmium telluride thin film light-transmitting component in the prior art is a comparative example;

[0058] Figure 8 The present invention is a schematic diagram of a specific process of a method for preparing a light-transmitting thin-film photovoltaic module according to an embodiment of the present invention.

[0059] Description of reference numerals:

[0060] 1-glass substrate; 2-transparent front electrode layer; 3-battery layer; 4-back contact layer; 5-transparent back electrode layer; 6-P1 laser groove; 7-P2 laser groove; 8-P3 laser groove; 9-sub-cell; 10-first light-transmitting band; 11-second light-transmitting band; 101-glass substrate; 102-front electrode layer; 103-battery layer; 104-back contact layer; 105-back electrode layer; 106-P1 laser groove; 107-P2 laser groove; 108-P3 laser groove; 109-sub-cell; 110-corresponding position of dead zone; 111-light-transmitting band. DETAILED DESCRIPTION

[0061] In order to solve the problems in the prior art that light-transmitting thin-film photovoltaic modules have uneven light transmission, low module power generation efficiency, appearance and safety hazards, long module preparation process time and high process cost, the present invention provides a light-transmitting thin-film photovoltaic module, comprising: a glass substrate, a transparent front electrode layer, a battery layer, a back contact layer and a transparent back electrode layer stacked in sequence; a plurality of dead zones, each dead zone comprising a P1 laser groove, a P2 laser groove and a P3 laser groove; the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer; the P2 laser groove penetrates the battery layer and the back contact layer; the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer; wherein the P1 laser groove, the P2 laser groove and the P2 laser groove are all light-transmitting areas; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0.

[0062] The present invention also provides a method for preparing a light-transmitting thin-film photovoltaic module, comprising the following steps: providing a glass substrate, and sequentially depositing a transparent front electrode layer, a battery layer and a back contact layer on the glass substrate; forming a P1 laser groove, wherein the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer; forming a P2 laser groove, wherein the P2 laser groove penetrates the battery layer and the back contact layer; forming a transparent back electrode layer on the side of the back contact layer facing away from the battery layer; forming a P3 laser groove, wherein the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer; the P1 laser groove, the P2 laser groove and the P3 laser groove constitute a dead zone; wherein the P1 laser groove, the P2 laser groove and the P2 laser groove are all light-transmitting zones; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0.

[0063] The technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention. In the description of the present invention, it should be noted that the terms "first", "second" and "third" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0064] Example 1

[0065] refer to Figure 3 This embodiment provides a light-transmitting thin-film photovoltaic module, including:

[0066] A glass substrate 1, a transparent front electrode layer 2, a battery layer 3, a back contact layer 4 and a transparent back electrode layer 5 stacked in sequence;

[0067] Several dead zones, each of which includes a P1 laser groove 6, a P2 laser groove 7 and a P3 laser groove 8; the P1 laser groove 6 penetrates the transparent front electrode layer 2, the battery layer 3 and the back contact layer 4; the P2 laser groove 7 penetrates the battery layer 3 and the back contact layer 4; the P3 laser groove 8 penetrates the battery layer 3, the back contact layer 4 and the transparent back electrode layer 5;

[0068] Among them, the P1 laser groove 6, the P2 laser groove 7 and the P3 laser groove 8 are all light-transmitting areas; the spacing between the P1 laser groove 6 and the P2 laser groove 7 is 0; the spacing between the P2 laser groove 7 and the P3 laser groove 8 is 0.

[0069] The light-transmitting thin-film photovoltaic module provided in this embodiment uses a transparent front electrode layer and a transparent back electrode layer, and sets the light-transmitting P1 laser groove, P2 laser groove and P3 laser groove to have a spacing of 0, and ensures that they do not overlap with each other. On the one hand, the light transmission uniformity and light transmission effect of the module can be improved, the appearance yield can be improved, and at the same time, the process time of the module can be reduced and the process cost can be reduced; on the other hand, the P1 to P3 laser grooves are used together as a dead zone, the width of the dead zone is increased, and at the same time the sub-cell width is reduced, which can improve the efficiency of the module.

[0070] Furthermore, in this embodiment, the P1 laser groove 6 is filled with a transparent protective paint;

[0071] The P2 laser groove 7 is filled with the same material as the transparent back electrode layer 5;

[0072] The P3 laser slot 8 is filled with air.

[0073] In specific implementation, the P1 laser groove 6 is filled with transparent protective paint, and the upper and lower parts of the P1 laser groove 6 are transparent electrodes, so the light transmission effect of the P1 laser groove 6 is better; the P2 laser groove 7 is filled with the same material as the transparent back electrode layer 5, and the P3 laser groove 8 is filled with air, so the light transmission effect of the P2 laser groove 7 and the P3 laser groove 8 is also better. In addition, the spacing between the P1 laser groove 6 and the P2 laser groove 7 is 0, and the spacing between the P2 laser groove 7 and the P3 laser groove 8 is 0, so that the entire dead zone is a light transmission zone with a high light transmission effect.

[0074] Further, in this embodiment, the width of the dead zone is 0.6 mm to 6 mm;

[0075] The width of the P1 laser groove 6 is 0.2 mm to 2 mm;

[0076] The width of the P2 laser groove 7 is 0.2 mm to 2 mm;

[0077] The width of the P3 laser groove 8 is 0.2 mm to 2 mm.

[0078] In specific implementation, this embodiment increases the dead zone width (the width of the P1 / P2 / P3 laser groove is 0.6mm to 6mm) to achieve light transmittance of the P1 / P2 / P3 laser grooves while optimizing the integration process of the light-transmitting components and improving component efficiency.

[0079] This embodiment utilizes the P1 / P2 / P3 region to form light transmittance, and increases the width and area ratio of the P1 / P2 / P3 region. At this time, the P1, P2 and P3 laser lines can reach the mm level. Such a width is much larger than the μm level position control accuracy of the laser process. Therefore, the spacing between P1 / P2 and P2 / P3 can be 0μm, and P1 / P2 and P2 / P3 will not overlap.

[0080] Furthermore, in this embodiment, if Figure 4 As shown, it also includes:

[0081] A plurality of parallel first light-transmitting strips 10, wherein the first light-transmitting strips 10 are connected by the dead zones located on the same straight line;

[0082] A plurality of parallel second light-transmitting strips 11, wherein the second light-transmitting strips 11 are perpendicular to the first light-transmitting strips 10;

[0083] The light-transmitting thin-film photovoltaic assembly further includes a plurality of sub-cells 9 ; the sub-cells 9 are separated by the first light-transmitting strips 10 and the second light-transmitting strips 11 .

[0084] When implementing it, Figure 4 As shown, the first light-transmitting tape 10 and the second light-transmitting tape 11 divide the assembly into a plurality of sub-cells 9. The first light-transmitting tape 10 and the second light-transmitting tape 11 can realize light transmission of the entire assembly, and the first light-transmitting tape 10 and the second light-transmitting tape 11 have uniform light transmission, good light transmission effect, and no short circuit point.

[0085] The light-transmitting thin-film photovoltaic module provided in this embodiment uses a transparent front electrode layer and a transparent back electrode layer, and sets the light-transmitting P1 laser groove, P2 laser groove and P3 laser groove to 0 spacing, and adds P1 laser groove, P2 laser groove and P3 laser groove to form a first light-transmitting band; the first light-transmitting band and the second light-transmitting band perpendicular to the first light-transmitting band jointly realize the light transmission of the module; on the one hand, the light transmission uniformity and light transmission effect of the module can be improved; on the other hand, the light transmittance of the module is jointly realized by the second light-transmitting band and the first light-transmitting band, and the formation of the first light-transmitting band is derived from the P1 / P2 / P3 laser etching process of the conventional opaque module (only the spot diameter is increased, and no additional processing time is added); the number and time of laser etching perpendicular to P1 / P2 / P3 can be reduced by half, thereby reducing the processing time of the light-transmitting module and thus reducing the module cost.

[0086] Furthermore, in this embodiment, the width of the sub-battery 9 is 1 mm to 5 mm;

[0087] The width of the first light-transmitting band 10 is 0.6 mm to 6 mm;

[0088] The width of the second light-transmitting band 11 is 0.6 mm to 6 mm.

[0089] In specific implementation, the current path in the light-transmitting thin-film photovoltaic module is: Figure 5In the direction of the arrow in the figure, on this current path, the main resistance comes from the transparent front electrode 2 and the transparent back electrode 5 (relative to metals, the resistivity of oxide transparent electrode materials is high). Therefore, the design should try to shorten the current transmission path in the transparent front electrode 2 and the transparent back electrode 5 (the width of the sub-cell 9 is in the mm level, the thickness is in the μm level, and the transmission path is mainly along the width direction of the sub-cell), that is, to reduce the width of the sub-cell 9.

[0090] For conventional opaque components, reducing the width of the sub-cell will also reduce the battery series resistance (Rs) and increase the battery fill factor (FF) and battery power generation; however, as the width of the sub-cell decreases, the proportion of the P1-P3 dead zone area increases (the minimum dead zone width is about 150μm to 200μm, and it cannot be further reduced at present, that is, the dead zone width is regarded as fixed), resulting in a decrease in battery current and power; therefore, there is currently a relatively optimal value for the sub-cell width (between 6mm and 8mm) (the width of the sub-cell in the present invention is 1mm to 5mm, of which 1mm is considered to be high transmittance such as 90% and above).

[0091] Therefore, the light-transmitting thin-film photovoltaic module provided in this embodiment reduces the width of the sub-cell 9 and increases the light-transmitting area of ​​the P1-P3 dead zone, thereby improving the module efficiency while achieving light transmission in the P1-P3 dead zone, which is not available in conventional light-transmitting module processes.

[0092] In addition, in this embodiment, the second light-transmitting strip and the first light-transmitting strip are comparable in width, which can ensure that the formed sub-cell is approximately square in shape, thereby improving the light transmission uniformity and light transmission effect of the component.

[0093] Example 2

[0094] refer to Figure 6 The present invention also provides a method for preparing a light-transmitting thin-film photovoltaic module, which is used to prepare the light-transmitting thin-film photovoltaic module of the above-mentioned embodiment 1. The method comprises the following steps:

[0095] S201, providing a glass substrate, and sequentially depositing a transparent front electrode layer, a battery layer, and a back contact layer on the glass substrate;

[0096] S202, forming a P1 laser groove, wherein the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer;

[0097] S203, forming a P2 laser groove, wherein the P2 laser groove penetrates the battery layer and the back contact layer;

[0098] S204, forming a transparent back electrode layer on a side of the back contact layer facing away from the battery layer;

[0099] S205, forming a P3 laser groove, wherein the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer; the P1 laser groove, the P2 laser groove and the P3 laser groove constitute a dead zone;

[0100] Among them, the P1 laser groove, the P2 laser groove and the P3 laser groove are all light-transmitting areas; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0.

[0101] The light-transmitting thin-film photovoltaic module provided in this embodiment is used to prepare the light-transmitting thin-film photovoltaic module provided in the present invention. By using a transparent front electrode layer and a transparent back electrode layer, and setting the spacing between the light-transmitting P1 laser groove, P2 laser groove and P3 laser groove to 0, and ensuring that they do not overlap with each other, on the one hand, the light transmission uniformity and light transmission effect of the module can be improved, the appearance yield can be improved, and at the same time, the process time of the module can be reduced and the process cost can be reduced; on the other hand, the P1 to P3 laser grooves are used together as a dead zone, the width of the dead zone is increased, and at the same time the sub-cell width is reduced, which can improve the efficiency of the module.

[0102] Furthermore, in some embodiments, the step of forming the P1 laser groove includes:

[0103] Using a first laser to etch the transparent front electrode layer, the battery layer and the back contact layer to form the P1 laser groove;

[0104] The P1 laser groove is filled with a transparent protective lacquer.

[0105] Furthermore, in some embodiments, the step of forming the P2 laser groove includes:

[0106] Etching the battery layer and the back contact layer using a second laser to form the P2 laser groove;

[0107] In the step of forming a transparent back electrode layer on the side of the back contact layer facing away from the battery layer, the transparent back electrode layer also extends into and fills the P2 laser groove.

[0108] Furthermore, in some embodiments, the step of forming the P3 laser groove includes:

[0109] The battery layer, the back contact layer and the transparent back electrode layer are etched with a third laser to form the P3 laser groove.

[0110] Further, in some embodiments, the wide spot diameter of the first laser is 0.2 mm to 2 mm, and the wavelength is 1064 nm;

[0111] The wide spot diameter of the second laser is 0.2 mm to 2 mm, and the wavelength is 532 nm;

[0112] The third laser has a wide spot diameter of 0.2 mm to 2 mm and a wavelength of 532 nm.

[0113] In one example, the wide spot diameter of the first laser is 0.2 mm, and the wavelength is 1064 nm; the wide spot diameter of the second laser is 0.6 mm, and the wavelength is 532 nm; the wide spot diameter of the third laser is 0.2 mm, and the wavelength is 532 nm.

[0114] Furthermore, in some embodiments, after the step of forming the P3 laser groove, the step further includes:

[0115] Using a fourth laser to etch the battery layer, the back contact layer and the transparent back electrode layer to form a second light-transmitting band;

[0116] The dead zones located on the same straight line are connected to form a first light-transmitting band, and the second light-transmitting band is perpendicular to the first light-transmitting band.

[0117] In specific implementation, the width of the first light-transmitting band is 0.6mm~6mm; the second light-transmitting band is formed by etching the battery layer, the back contact layer and the transparent back electrode layer with a fourth laser, and the width of the second light-transmitting band is 0.6mm~6mm; the second light-transmitting band and the first light-transmitting band are equivalent in width, and the formed sub-battery (width of 1mm~5mm) is ensured to be approximately square in shape, so that the light transmission uniformity and light transmission effect of the component are significantly improved.

[0118] For conventional light-transmitting components, during the processing of the second light-transmitting band, the laser will also act on Figure 2 On the metal film layer at position 110 (specifically in the P2 laser slot), due to the high absorption coefficient of the metal film to the laser, vaporization and recondensation will occur, resulting in a short-circuit point at position 110, reducing the efficiency of the component and posing a long-term safety hazard: the short-circuit point will burn through during the long-term use of the component, further reducing the power generation efficiency of the component, producing black burnt spots and affecting the appearance of the component; in addition, the formation of the burnt spots will also cause the component to spontaneously combust.

[0119] The preparation method of the light-transmitting thin-film photovoltaic module provided in the present embodiment adopts a transparent back electrode structure. The transparent back electrode layer is a transparent conductive oxide, which is similar to the transparent front electrode layer. Therefore, in the process of forming the second light-transmitting band, the fourth laser will not be absorbed by the transparent back electrode layer (mainly transmitted). Therefore, the transparent conductive film at the position of the first light-transmitting band will not be vaporized and recondensed, and a short-circuit point will not be introduced (this is different from the conventional metal film layer. The metal will absorb the fourth laser energy to vaporize and recondense on the inner wall of the laser groove to form a short-circuit point). While further improving the efficiency of the module, the further influence of the burn-through and burnt spots on the efficiency of the module and the influence on the appearance of the module are eliminated, and the risk of spontaneous combustion of the module caused by the burnt spots can also be eliminated.

[0120] In order to verify the effectiveness of the solution of this embodiment, the present invention also provides a set of comparative examples and Example 3 to compare the differences between the conventional component preparation process and the specific preparation method of the light-transmitting thin-film photovoltaic component provided by the present invention.

[0121] Comparative Example

[0122] The comparative example is a conventional preparation process and method of a cadmium telluride thin film light-transmitting component in the prior art, referring to Figure 7 , including steps S201-S211:

[0123] S201, providing a glass substrate 101.

[0124] S202, sequentially depositing a transparent front electrode layer 102 / a battery layer 103. A FTO transparent conductive layer 102 with a thickness of 600 nm and a CdSe / CdTe battery layer 103 with a thickness of 3 μm are sequentially deposited on a glass substrate 1. Figure 1 shown.

[0125] S203, CdCl2 heat treatment / acid surface treatment: The battery layer 103 is subjected to 430°C CdCl2 heat treatment and 1% dilute hydrochloric acid surface treatment.

[0126] S204, P1 laser (spot 30 μm): A laser with a wavelength of 1064 nm is used for P1 laser etching to etch the transparent front electrode layer 102 and the battery layer 103, and the formed P1 laser groove 106 has a width of 30 μm.

[0127] S205, photoresist filling: Fill the P1 laser groove 106 with insulating photoresist.

[0128] S206, back contact layer deposition / annealing: Deposit a ZnTe:Cu back contact layer 104 and perform annealing at 250°C.

[0129] S207, P2 laser (spot 40 μm). Use 532 nm laser to perform P2 laser etching to etch the battery layer 103 and the back contact layer 104. The formed P2 laser groove 107 has a width of 40 μm, P2 is parallel to P1, and the P1 / P2 spacing is 20 μm.

[0130] S208 , metal back electrode layer deposition: Deposition of a 200Mo / Al back electrode layer 5 is performed, and the back electrode layer 5 covers the surface of the battery layer 3 and fills the P2 laser groove 7 .

[0131] S209, P3 laser (spot 40 μm). Use 532 nm P3 laser to etch the metal back electrode layer 105, and the formed P3 laser groove 108 has a width of 40 μm, P3 is parallel to P2, and the P2 / P3 interval is 20 μm.

[0132] S210, laser edge cleaning. Laser edge cleaning is performed to complete conventional component preparation; wherein the width of the P1-P3 dead zone is 170 μm, and the width of the sub-cell 109 is 7 mm.

[0133] S211, vertical P1 / P2 / P3 etching (spot 1mm). In the direction perpendicular to P1 / P2 / P3, a 532nm laser with a spot diameter of 1mm is used to etch the battery layer 103, the back contact layer 104 and the back electrode layer 105; after multiple etchings, a light-transmitting band 111 with a width of 2mm is formed, and the width between the light-transmitting bands 111 and 111 is positioned at 9mm.

[0134] In the conventional component preparation process of the comparative example, the laser etching processing time of the single-chip component is about 5 minutes, which is long and costly; the final effect is as follows Figure 2 As shown, the light transmission of the component relies on a single light-transmitting strip 111, and the light transmission uniformity and effect are relatively poor.

[0135] In addition, the light-transmitting component is formed by subsequently introducing laser etching perpendicular to the P1 / P2 / P3 direction on the basis of the conventional opaque component process. The power of the light-transmitting component is related to the etching area. Theoretically, taking the conventional opaque component power of 120W as an example, etching about 20% of the battery area (component transmittance 20%), the theoretical power of the light-transmitting component is 96W; however, further considering the influence of the laser on the metal back electrode 105 at position 110 (specifically in the P2 laser groove) during the processing of the transparent band 111, the metal back electrode layer 105 is vaporized and recondensed, and the introduction of a short-circuit point in the laser groove will further reduce the component power by 3W to 5W; moreover, these short-circuit points in the component will have the problem of burn-through during subsequent use, further damaging the battery layer and causing the component power to decrease by 3W to 5W, and the resulting black burnt spots will also affect the appearance of the component; finally, this short-circuit point also has the risk of causing the component to spontaneously combust during the burn-through process.

[0136] Example 3

[0137] Example 3 is a specific preparation method of a light-transmitting thin-film photovoltaic module provided by the present invention, referring to Figure 8 , including steps S301-S311:

[0138] S301, providing a glass substrate 1.

[0139] S302, depositing a transparent front electrode layer / battery layer in sequence. A FTO transparent conductive layer 2 with a thickness of 600 nm and a CdSe / CdTe battery layer 3 with a thickness of 3 μm are deposited in sequence on a glass substrate 1. Figure 3 shown.

[0140] S303, CdCl2 heat treatment / acid surface treatment: The battery layer 3 is subjected to 430°C CdCl2 heat treatment and 1% dilute hydrochloric acid surface treatment.

[0141] S304, back contact layer deposition / annealing: Deposit a ZnTe:Cu back contact layer 4 and perform annealing at 250°C.

[0142] S305, P1 laser (spot 0.2 mm): A 1064 nm wavelength laser with a wide spot diameter (0.2 mm) is used for P1 laser etching to etch the transparent front electrode layer 2, the battery layer 3 and the back contact layer 4, and the formed P1 laser groove 6 has a width of 0.2 mm.

[0143] S306, photoresist filling: Fill the P1 laser groove 6 with insulating photoresist.

[0144] S307, P2 laser (spot 0.6 mm). Use 532nm laser with wide spot diameter (0.6 mm) to perform P2 laser etching to etch the battery layer 3 and the back contact layer 4. The formed P2 laser groove 7 has a width of 0.6 mm, P2 is parallel to P1, and the P1 / P2 spacing is 0.

[0145] S308 , transparent back electrode layer deposition: Deposition of an ITO electrode with a thickness of 200 nm is performed, and the ITO transparent back electrode layer covers the surface of the battery layer 3 and fills the P2 laser groove 7 .

[0146] S309, P3 laser (spot 0.2 mm). Use 532nm laser with wide spot diameter (0.2 mm) to perform P3 laser etching, etching the battery layer 3, back contact layer 4 and ITO transparent back electrode layer 5, and the formed P3 laser groove 7 has a width of 0.2 mm, P3 is parallel to P2, and the P2 / P3 spacing is 0.

[0147] S310, laser edge removal. Laser edge removal is performed to complete conventional component preparation; wherein the width of the P1-P3 dead zone is 1 mm, a first light-transmitting band 10 is formed, and the width of the sub-cell 9 is 4.2 mm.

[0148] S311, vertical P1 / P2 / P3 etching (spot 1mm). In the direction perpendicular to P1 / P2 / P3, a 532nm laser with a spot diameter of 1mm is used to etch the battery layer 3, the back contact layer 4 and the transparent back electrode layer 5, and a second light-transmitting band 11 with a width of 1mm is formed. The width between the first light-transmitting band 10 and the second light-transmitting band 11 is 4.2mm.

[0149] In the specific preparation method of the light-transmitting thin-film photovoltaic module provided in this embodiment, the laser etching time for forming the first light-transmitting band 10 of the monolithic module is about 2.5 minutes (because the first light-transmitting band 10 is formed in the P1-P3 dead zone, the area of ​​the second light-transmitting band 11 can be reduced by half), the processing time is shortened by nearly half, and the cost is reduced; the final effect is as follows Figure 4 As shown, the light transmission of the component relies on the first light-transmitting band 10 and the second light-transmitting band 11, and the light transmission uniformity and effect of the component are improved. In terms of the power generation of the component, since about 20% of the battery area is etched, the power of the component is reduced by 20%, from 120W to 96W; however, unlike the comparative example, the light-transmitting area (etching area) includes the first light-transmitting band 10, that is, the wide P1-P3 dead area, and correspondingly, the width of the sub-cell 9 is reduced from 7mm to 4.2mm; the width of the sub-cell 9 is reduced, the battery series resistance is reduced, the filling factor is increased, and the power generation of the component is increased by 5W to 10W; therefore, under the same light-transmitting area (etching area), the power generation of the light-transmitting component of Example 3 is improved. Finally, in the process of forming the first light-transmitting band 10 by laser etching, since the P2 laser groove 7 is filled with the transparent back electrode layer 5, the laser passes through the transparent back electrode layer 5 without being absorbed. Therefore, the transparent back electrode layer 5 will not vaporize and recondense, thereby avoiding the formation of a short-circuit point in the laser etching groove and the power loss of 3W to 5W. Without a short-circuit point, the subsequent burn-through problem of the short-circuit point, the burn spot and the impact on the appearance of the component, and the potential risk of spontaneous combustion of the component are avoided.

[0150] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A light-transmitting thin-film photovoltaic module, characterized in that: include: A glass substrate, a transparent front electrode layer, a battery layer, a back contact layer and a transparent back electrode layer stacked in sequence; A plurality of dead zones, each of which comprises a P1 laser groove, a P2 laser groove and a P3 laser groove; the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer; the P2 laser groove penetrates the battery layer and the back contact layer; the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer; Among them, the P1 laser groove, the P2 laser groove and the P3 laser groove are all light-transmitting areas; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0.

2. The light-transmitting thin-film photovoltaic module according to claim 1, characterized in that: The P1 laser groove is filled with a transparent protective paint; The P2 laser groove is filled with the same material as the transparent back electrode layer; The P3 laser tank is filled with air.

3. The light-transmitting thin-film photovoltaic module according to claim 2, characterized in that: The width of the dead zone is 0.6 mm to 6 mm; The width of the P1 laser groove is 0.2 mm to 2 mm; The width of the P2 laser groove is 0.2 mm to 2 mm; The width of the P3 laser groove is 0.2 mm to 2 mm.

4. The light-transmitting thin-film photovoltaic module according to claim 1, characterized in that: Also includes: A plurality of parallel first light-transmitting strips, wherein the first light-transmitting strips are formed by connecting the dead zones located on the same straight line; A plurality of parallel second light-transmitting strips, wherein the second light-transmitting strips are perpendicular to the first light-transmitting strips; The light-transmitting thin-film photovoltaic assembly further includes a plurality of sub-cells; the sub-cells are separated by the first light-transmitting strip and the second light-transmitting strip.

5. The light-transmitting thin-film photovoltaic module according to claim 4, characterized in that: The width of the sub-cell is 1 mm to 5 mm; The width of the first light-transmitting band is 0.6 mm to 6 mm; The width of the second light-transmitting band is 0.6 mm to 6 mm.

6. A method for preparing a light-transmitting thin-film photovoltaic module, characterized in that: The following steps are involved: Providing a glass substrate, on which a transparent front electrode layer, a battery layer and a back contact layer are sequentially deposited; forming a P1 laser groove, wherein the P1 laser groove penetrates the transparent front electrode layer, the battery layer and the back contact layer; forming a P2 laser groove, wherein the P2 laser groove penetrates the battery layer and the back contact layer; forming a transparent back electrode layer on a side of the back contact layer facing away from the battery layer; A P3 laser groove is formed, wherein the P3 laser groove penetrates the battery layer, the back contact layer and the transparent back electrode layer; the P1 laser groove, the P2 laser groove and the P3 laser groove constitute a dead zone; Among them, the P1 laser groove, the P2 laser groove and the P3 laser groove are all light-transmitting areas; the spacing between the P1 laser groove and the P2 laser groove is 0; the spacing between the P2 laser groove and the P3 laser groove is 0.

7. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 6, characterized in that: The step of forming the P1 laser groove includes: Using a first laser to etch the transparent front electrode layer, the battery layer and the back contact layer to form the P1 laser groove; The P1 laser groove is filled with a transparent protective lacquer.

8. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 7, characterized in that: The step of forming the P2 laser groove includes: Etching the battery layer and the back contact layer using a second laser to form the P2 laser groove; In the step of forming a transparent back electrode layer on the side of the back contact layer facing away from the battery layer, the transparent back electrode layer also extends into and fills the P2 laser groove.

9. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 8, characterized in that: The step of forming the P3 laser groove includes: The battery layer, the back contact layer and the transparent back electrode layer are etched with a third laser to form the P3 laser groove.

10. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 9, characterized in that: The first laser has a wide spot diameter of 0.2 mm to 2 mm and a wavelength of 1064 nm; The wide spot diameter of the second laser is 0.2 mm to 2 mm, and the wavelength is 532 nm; The third laser has a wide spot diameter of 0.2 mm to 2 mm and a wavelength of 532 nm.

11. The method for preparing a light-transmitting thin-film photovoltaic module according to claim 6, characterized in that: After the step of forming the P3 laser groove, the method further includes: Using a fourth laser to etch the battery layer, the back contact layer and the transparent back electrode layer to form a second light-transmitting band; The dead zones located on the same straight line are connected to form a first light-transmitting band, and the second light-transmitting band is perpendicular to the first light-transmitting band.

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