Device for optimizing uniformity of large-size wafer film

Abstract

The invention provides a device for optimizing the uniformity of a large-size wafer film, and relates to the technical field of superconducting quantum computing. A device for optimizing the uniformity of a large-size wafer film comprises a vacuum chamber, a control computer, a remote control handle and a sample table, electron beam evaporation equipment, a rate crystal oscillator and a film thickness crystal oscillator are fixedly connected in the vacuum chamber, and the sample table is connected with the inner top wall of the vacuum chamber through a spiral supporting rod. And a crucible is arranged at the top of the electron beam evaporation equipment. A plurality of high-energy electron beams reach the surface of the crucible under the action of an alternating magnetic field, the positions of electron beam light spots on the surface of the crucible are controlled through a control computer and a remote control handle, materials in the crucible can be melted better through simultaneous operation of the electron beam light spots, the diffusion range of evaporation materials becomes large, dense and uniform during evaporation, and the evaporation efficiency is improved. Therefore, the uniformity of the large-size wafer film is obviously improved.

Description

Technical Field

[0001] The invention relates to a device for optimizing the uniformity of a wafer thin film, in particular to a device for optimizing the uniformity of a large-size wafer thin film, and belongs to the technical field of superconducting quantum computing. Background Art

[0002] The importance of thin films in modern science and technology is increasing day by day. Basically, all technologies are inseparable from thin films, and the main methods for thin film deposition include physical vapor deposition (PVD), chemical vapor deposition (CVD), solution method and atomic layer deposition (ALD). Among them, PVD technology refers to the use of physical methods under vacuum conditions to vaporize the surface of a substance into gaseous atoms, molecules or partially ionize them into ions, and through a low-pressure gas (or plasma) process, a thin film material with some special functions is deposited on the surface of the substrate material.

[0003] In the PVD equipment that realizes the coating process by electron beam evaporation system, only one electron gun is placed, so only one high-energy electron beam can be generated, which reaches the crucible surface through the alternating magnetic field. In fact, the energy of this high-energy electron beam is uneven, and the energy decreases from the center to the outside and is diffusely distributed. Therefore, the energy of the electron beam spot on the crucible surface is also uneven. In addition, when the electron beam evaporates, the material diffuses from the crucible surface to the wafer surface. This diffusion is irregular and non-directional, which further affects the uniformity of the wafer film. For small-sized wafers, since the evaporation area with uniform energy distribution can cover the small-sized wafer, the uniformity of the film deposited on the small-sized wafer is less affected. When the wafer size is 8 inches or 12 inches, the evaporation area with uniform energy distribution is much smaller than the wafer size, and the uniformity of the film is significantly deteriorated. For this reason, the present invention provides a device for optimizing the uniformity of large-sized wafer film. Summary of the invention

[0004] 1. Technical issues to be solved

[0005] The purpose of the present invention is to provide a device for optimizing the uniformity of thin films on large-size wafers in order to solve the above-mentioned problems, so as to solve the problem in the prior art that the evaporation area with uniform energy distribution is much smaller than the wafer size, and the uniformity of the thin film is significantly deteriorated.

[0006] (II) Technical solution

[0007] The present invention is implemented through the following technical scheme: a device for optimizing the uniformity of large-size wafer thin films, comprising a vacuum chamber, a control computer, a remote control handle and a sample stage, wherein the interior of the vacuum chamber is fixedly connected with an electron beam evaporation device, a rate crystal oscillator and a film thickness crystal oscillator, the sample stage and the inner top wall of the vacuum chamber are connected by a spiral support rod, a crucible is placed on the top of the electron beam evaporation device, a plating material is placed inside the crucible, an electron beam high-voltage power supply device, a filament and an electron acceleration device for providing voltage and current to the electron beam are fixedly connected inside the electron beam evaporation device, an alternating magnetic field is provided inside the vacuum chamber, and an electron gun for generating a high-energy electron beam is fixedly connected inside the electron beam evaporation device.

[0008] Preferably, the control computer and the remote control handle are electrically connected to the electron beam evaporation equipment through a data cable, and the electron beam evaporation equipment is electrically connected to a grounding device. The PVD equipment operation system is connected to the control computer and the remote control handle to realize information transmission at the same time. The grounding device guides away the charge in the equipment, thereby playing a safety protection role.

[0009] Preferably, a crucible table is fixedly connected to the top of the electron beam evaporation device, and the crucible is placed inside the crucible table, and the crucible is placed under the action of the crucible table.

[0010] Preferably, a partition is fixedly connected to the bottom of the crucible table, and a water cooling device for cooling the crucible table is embedded inside the crucible table, and the crucible is cooled by the water cooling device.

[0011] Preferably, a fixed baffle is fixedly connected inside the electron beam evaporation device, and the electron gun is fixedly connected to the fixed baffle, and the electron gun is installed and fixed by the fixed baffle.

[0012] Preferably, the filament is a tungsten filament, which is heated when powered on and becomes a hot cathode that emits electrons.

[0013] The present invention provides a device for optimizing the uniformity of thin films on large-sized wafers, which has the following beneficial effects:

[0014] 1. The device uses a rate crystal oscillator to monitor the rate of material evaporation in real time, which is convenient for timely adjustment of the current size. The film thickness crystal oscillator is used to monitor the rate of material deposition on the wafer surface in real time. During the coating process, the film thickness crystal oscillator and the rate crystal oscillator run simultaneously, and the monitoring results can be controlled on a computer for easy recording and process debugging. Multiple high-energy electron beams reach the crucible surface under the action of an alternating magnetic field. The position of the electron beam spot on the crucible surface is controlled by a control computer and a remote control handle. Through the simultaneous operation of multiple electron beam spots, the material in the crucible can be melted better, and the diffusion range of the evaporated material becomes larger, denser, and more uniform during evaporation, so the uniformity of large-size wafer films is significantly improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a schematic diagram of the vacuum chamber structure of the present invention;

[0016] Figure 2 It is a schematic diagram of the structure of the electron beam evaporation equipment of the present invention.

[0017]

Main component symbol description

[0018] 1. Vacuum chamber; 2. Electron beam evaporation equipment; 3. Rate crystal oscillator; 4. Film thickness crystal oscillator; 5. Sample stage; 6. Screw support rod; 7. Crucible; 8. Electron beam spot; 9. Plating material; 10. Data line; 11. Control computer; 12. Remote control handle; 13. Electron beam high-voltage power supply device; 14. Filament; 15. Electron accelerator; 16. Water cooling device; 17. Partition; 18. Crucible stage; 19. First high-energy electron beam motion trajectory; 20. Second high-energy electron beam motion trajectory; 21. Alternating magnetic field; 22. Electron gun; 23. Grounding device; 24. Fixed baffle. DETAILED DESCRIPTION

[0019] An embodiment of the present invention provides a device for optimizing the uniformity of a large-size wafer thin film.

[0020] See also Figure 1 and Figure 2A device for optimizing the uniformity of thin films on large-size wafers comprises a vacuum chamber 1, a control computer 11, a remote control handle 12 and a sample stage 5. The vacuum chamber 1 is a vacuum chamber of a PVD device. An electron beam evaporation device 2, a rate crystal oscillator 3 and a film thickness crystal oscillator 4 are fixedly connected inside the vacuum chamber 1. The rate crystal oscillator 3 is used to detect the diffusion rate of the coating material in the vacuum chamber during the electron beam evaporation process. The film thickness crystal oscillator 4 is used to detect the deposition rate of the coating material deposited on the wafer surface when the device is running. The control computer 11 and the remote control handle 12 are electrically connected to the electron beam evaporation device 2 through a data line 10. The data line 10 connects the PVD device operation system with the control computer 11 and the remote control handle 12 to realize information transmission at the same time. The control computer 11 realizes software program editing and operation control of the device operation. The remote control handle 12 has a basic editing system that can realize the control of the electron beam evaporation process and the electron beam spot, etc. The electron beam evaporation device 2 is electrically connected to a grounding device 23. The grounding device 23 guides away the charge in the device to play a safety protection role.

[0021] Please refer again Figure 1 and Figure 2 The sample stage 5 and the inner top wall of the vacuum chamber 1 are connected by a spiral support rod 6. The sample stage 5 is used to fix the sample wafer, realize the rotation of the sample stage 5 during the deposition process, and connect the top of the vacuum chamber 1 to the sample stage 5 at the same time.

[0022] Please refer again Figure 1 and Figure 2 A crucible 7 is placed on the top of the electron beam evaporation equipment 2. The crucible 7 is used to hold the plating material, has a heat-insulating effect on heat, and reduces heat loss. A plating material 9 is placed inside the crucible 7. The plating material 9 is the raw material deposited on the surface of the wafer. For metal plating materials, it is usually cylindrical or spherical particles. An electron beam spot 8 is provided on the surface of the plating material 9. The electron beam spot 8 converts electromagnetic field energy into thermal energy, which can be used for melting and evaporation of the plating material. A crucible table 18 is fixedly connected to the top of the electron beam evaporation equipment 2. The crucible 7 is placed inside the crucible table 18. A partition 17 is fixedly connected to the bottom of the crucible table 18. A water cooling device 16 for cooling the crucible table 18 is embedded inside the crucible table 18. The water cooling device 16 is used to cool the crucible 7. The crucible table 18 can be used to place the crucible 7.

[0023] Please refer again Figure 1 and Figure 2The electron beam evaporation device 2 is internally fixedly connected with an electron beam high-voltage power supply device 13 for providing voltage and current to the electron beam, a filament 14 and an electron accelerator 15. The filament 14 is a tungsten filament. The electron beam high-voltage power supply device 13 is used to provide voltage and current for the electron beam operation. After the filament 14 is energized, the tungsten filament is heated and becomes a hot cathode that emits electrons. The electron accelerator 15 accelerates the electrons generated by the filament 14 to become an electron acceleration anode. An alternating magnetic field 21 is provided inside the vacuum chamber 1. The alternating magnetic field 21 can be used to realize the motion trajectory of the high-energy electron beam, such as the first high-energy electron beam motion trajectory 19 and the second high-energy electron beam motion trajectory 20, and the position of the electron beam spot 8 in the crucible 7. The second high-energy electron beam motion trajectory 20 is the motion trajectory of the high-energy electron beam under the action of the magnetic field, which is jointly generated by the filament 14 and the electron accelerator 15.

[0024] Please refer again Figure 1 and Figure 2 The electron beam evaporation device 2 is internally fixedly connected with an electron gun 22 for generating a high-energy electron beam. The electron gun 22 is used to generate a high-energy electron beam. The first high-energy electron beam motion trajectory 19 is the motion trajectory of the high-energy electron beam under the action of the magnetic field, which is generated by the electron gun 22. The electron beam evaporation device 2 is internally fixedly connected with a fixed baffle 24. The electron gun 22 is fixedly connected to the fixed baffle 24. The fixed baffle 24 is used to install and fix the electron gun 22. The filament 14, the electron accelerator 15 and the electron gun 22 constitute an electron beam device.

[0025] Working principle: The PVD equipment is turned on. When the vacuum degree inside the vacuum chamber 1 reaches the requirement, the electron beam high-voltage power supply device 13 is used to pass high voltage to the electron beam device, generally 10 kV, and then the remote control handle 12 is used to provide current to the electron beam device. The current is required to increase slowly, and it is observed whether the electron beam spot 8 on the surface of the coating material 9 becomes brighter. If the spot becomes brighter, it means that the electron beam evaporation device is operating normally. The position of the electron beam spot 8 in the crucible 7 can be controlled by the remote control handle 12. By increasing the current through the remote control handle 12, the energy of the high-energy electron beam can be increased, so the heat of the electron beam spot 8 is higher, so the material in the crucible 7 can be melted, and the current can be continued to be increased to vaporize the material in the crucible 7 and then deposit it on the wafer inside the sample stage 5, thereby realizing the coating process. During the coating process, the thin film deposition rate can be controlled by adjusting the current. For rate detection, the PVD equipment is equipped with a rate crystal oscillator 3 and a film thickness crystal oscillator 4. The rate crystal oscillator 3 monitors the rate of material evaporation in real time, which is convenient for timely adjustment of the current. The film thickness crystal oscillator 4 is used to monitor the rate of material deposition on the wafer surface in real time. During the coating process, the rate crystal oscillator 3 and the film thickness crystal oscillator 4 run simultaneously, and the monitoring results can be fed back to the control computer 11 through the data line 10, which is convenient for recording, process debugging, etc. The high-energy electron beam generated by the electron gun 22 and the filament 14 and the electric The high-energy electron beam generated by the electron accelerator 15 reaches the surface of the crucible through the alternating magnetic field 21, and the running trajectory is the first high-energy electron beam motion trajectory 19 and the second high-energy electron beam motion trajectory 20. Multiple high-energy electron beams reach the surface of the crucible 7 under the action of the alternating magnetic field 21. The position of the electron beam spot 8 on the surface of the crucible 7 is controlled by the control computer 11 and the remote control handle 12. Through the simultaneous operation of multiple electron beam spots, the material in the crucible 7 can be melted better, and the diffusion range of the evaporated material becomes larger, denser and more uniform during evaporation. Therefore, the uniformity of the large-size wafer film is significantly improved. On the other hand, during film deposition, the number of electron guns 22 used can be selected according to the wafer size, and the operation of the electron guns 22 can be adjusted and controlled by the control computer 11 and the remote control handle 12, so that energy is fully utilized, ensuring uniform film deposition while improving equipment efficiency.

[0026] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A device for optimizing the uniformity of thin films on large-sized wafers, comprising a vacuum chamber (1), a control computer (11), a remote control handle (12) and a sample stage (5), characterized in that: The interior of the vacuum chamber (1) is fixedly connected with an electron beam evaporation device (2), a rate crystal oscillator (3) and a film thickness crystal oscillator (4); the sample stage (5) and the inner top wall of the vacuum chamber (1) are connected via a spiral support rod (6); a crucible (7) is placed on the top of the electron beam evaporation device (2); a plating material (9) is placed inside the crucible (7); an electron beam high-voltage power supply device (13) for providing voltage and current to the electron beam, a filament (14) and an electron beam are fixedly connected inside the electron beam evaporation device (2). An accelerating device (15), a crucible table (18) is fixedly connected to the top of the electron beam evaporation device (2), the crucible (7) is placed inside the crucible table (18), a partition (17) is fixedly connected to the bottom of the crucible table (18), a water cooling device (16) for cooling the crucible table (18) is embedded inside the crucible table (18), an alternating magnetic field (21) is provided inside the vacuum chamber (1), and a plurality of electron guns (22) for generating high-energy electron beams are fixedly connected inside the electron beam evaporation device (2).

2. The device for optimizing uniformity of thin films on large-sized wafers according to claim 1, characterized in that: The control computer (11) and the remote control handle (12) are electrically connected to the electron beam evaporation device (2) via a data line (10), and a grounding device (23) is electrically connected to the electron beam evaporation device (2).

3. The device for optimizing uniformity of thin film on large-sized wafers according to claim 1, characterized in that: A fixed baffle (24) is fixedly connected inside the electron beam evaporation device (2), and the electron gun (22) is fixedly connected to the fixed baffle (24).

4. The device for optimizing uniformity of thin films on large-sized wafers according to claim 1, characterized in that: The filament (14) is a tungsten filament.

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