Semiconductor module with laminated busbar structure

Abstract

The invention discloses a semiconductor module with a laminated busbar structure, and relates to the technical field of semiconductor chips, the semiconductor module comprises a bottom plate, a ceramic copper-clad plate is arranged at the upper part of the bottom plate, a chip body is arranged at the upper part of the ceramic copper-clad plate, and the upper part of the chip body is detachably connected with a first busbar; a first busbar is arranged on the chip body, a second busbar is detachably connected to the upper end of the first busbar, a driving plate is arranged between the chip body and the first busbar, the driving plate is located below the first busbar and the second busbar and used for controlling the chip body, an inductance assembly is arranged above the second busbar, and a cover plate is detachably connected to the upper portion of the inductance assembly. According to the semiconductor module with the laminated busbar structure, the structural design of the laminated busbar is beneficial to reducing stray inductance in a loop, so that voltage spikes are effectively reduced, high-voltage spikes are relieved or dispersed, the semiconductor chip is further protected from high-voltage impact, and the stability and reliability of the chip are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor chips, and in particular to a semiconductor module with a laminated busbar structure. Background Art

[0002] Semiconductor chips are semiconductor devices that can achieve certain functions by etching and wiring on semiconductor sheets. Not only silicon chips, but also common ones include gallium arsenide. Gallium arsenide is toxic, so don't be curious to disassemble some inferior circuit boards. Semiconductor materials such as germanium, semiconductors are also trendy like cars. In the 1970s, American companies such as Intel had the upper hand in the dynamic random access memory market. In order to meet the needs of mass production, the electrical properties of semiconductors must be predictable and stable, so the purity of dopants and the quality of semiconductor lattice structures must be strictly required. Common quality problems include lattice dislocations, twin planes or stacking faults, which will affect the characteristics of semiconductor materials. For a semiconductor device, defects in the material lattice are usually the main cause of component performance.

[0003] Patent No. CN202010268574.2 discloses a double-sided water-cooled SiC half-bridge module packaging structure with an integrated laminated busbar, wherein the packaging structure includes a main structure, an external connection structure and a heat sink, and the external connection structure and the heat sink are both connected to the main structure. The main structure includes an upper DBC, a lower DBC, a SiC semiconductor chip, and a gasket. The external connection structure includes a laminated busbar and an AC busbar, and the laminated busbar includes a positive busbar and a negative busbar. The radiator includes two water-cooled radiators, which are respectively connected to the upper DBC and the lower DBC. The advantages of this packaging structure are low parasitic inductance, good current sharing effect, high heat dissipation coefficient and balanced heat dissipation, which realizes the miniaturization, modularization and standardized design of the device, and can give full play to the high speed and high temperature characteristics of SiC devices.

[0004] After searching the above patents, it was found that the semiconductor chip has the following deficiencies: 1. Stray inductance is an inevitable electromagnetic interference in the circuit. When current passes through the circuit, a magnetic field is generated. When the magnetic field changes, an electromotive force is generated, which leads to the radiation of electromagnetic waves. This high stray inductance will cause voltage spikes and current oscillations, which will reduce the stability and reliability of the system; 2. The uneven current distribution caused by high stray inductance may cause local hot spots and affect the thermal management of the system.

[0005] Therefore, a novel semiconductor module with a laminated busbar structure is proposed. Summary of the invention

[0006] The object of the present invention is to provide a semiconductor module with a laminated busbar structure to solve the problems raised in the above background technology:

[0007] In order to achieve the above object, the present invention provides the following technical solutions:

[0008] A semiconductor module with a laminated busbar structure comprises a base plate, a ceramic copper-clad plate is arranged on the upper part of the base plate, a chip body is arranged on the upper part of the ceramic copper-clad plate, a No. 1 busbar is detachably connected to the upper part of the chip body, a No. 2 busbar is detachably connected to the upper end of the No. 1 busbar, a driving board is arranged between the chip body and the No. 1 busbar, the driving board is located below the No. 1 busbar and the No. 2 busbar, and the driving board is used to control the chip body, an inductor component is arranged above the No. 2 busbar, a cover plate is detachably connected to the upper part of the inductor component, two groups of connecting plates are fixedly connected to the two ends of the No. 1 busbar and the two ends of the No. 2 busbar, and the middle part of the upper end of the two groups of connecting plates is provided with connecting holes that pass through from top to bottom.

[0009] Preferably, the first busbar and the second busbar are connected in a stacked manner, and the first busbar and the second busbar have different lengths.

[0010] By adopting the above technical solution, the structural design of the laminated busbar is conducive to reducing the stray inductance in the loop, thereby effectively reducing the voltage spike.

[0011] Preferably, the chip body is located below the driving board, and the chip body is located inside the bottom plate.

[0012] By adopting the above technical solution, the stray inductance of the semiconductor chip can be reduced when it is in use, and the stability and reliability of the chip can also be improved.

[0013] Preferably, the upper surfaces of the No. 1 busbar and the No. 2 busbar are both provided with epoxy powder coated busbars, the epoxy powder coated busbars are combined with nano silver ions, and an insulating layer is provided between the No. 1 busbar and the No. 2 busbar.

[0014] By adopting the above technical solution, the stray inductance of the semiconductor chip can be reduced when it is in use, and the stability and reliability of the chip can also be improved.

[0015] Preferably, the doping ions of the epoxy powder coating busbar are nano silver ions, boron ions or aluminum ions.

[0016] By adopting the above technical solution, the stray inductance of the semiconductor chip can be reduced when it is in use, and the stability and reliability of the chip can also be improved.

[0017] Preferably, the doping ions of the chip body are nitrogen ions, carbon ions or phosphorus ions.

[0018] By adopting the above technical solution, the epoxy powder coating is combined with nano silver ions, so that the mechanical properties and corrosion resistance of the semiconductor chip can be significantly improved.

[0019] Preferably, the connecting plate is metallurgically connected to one side of the chip body.

[0020] The adoption of the above technical solution helps to mitigate or disperse high voltage spikes, further protecting semiconductor chips from high voltage shocks.

[0021] Preferably, the inductor assembly is provided with a plurality of inductor plates, and the plurality of inductor plates are all metallurgically connected to one side of the chip body.

[0022] By adopting the above technical solution, the semiconductor chip can be further protected from high voltage shock and the stability and reliability of the chip can be improved.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] 1. In the present invention, a No. 1 busbar and a No. 2 busbar are arranged on the chip body, the No. 1 busbar and the No. 2 busbar are laminated and connected, and the No. 1 busbar and the No. 2 busbar are both provided with epoxy powder coated busbars. The structural design of the laminated busbar is conducive to reducing the stray inductance in the loop, thereby effectively reducing the voltage spike, so that the stray inductance of the semiconductor chip is reduced when it is used, and the stability and reliability of the chip can be improved;

[0025] 2. In the present invention, the laminated busbar structure can improve the current balance of semiconductor chips, and also help reduce local heat accumulation caused by uneven current, further protecting the semiconductor chips from overheating damage. The epoxy powder coating combined with nano silver ions can significantly improve the mechanical properties and corrosion resistance of the semiconductor chips, help slow down or disperse high voltage spikes, and further protect the semiconductor chips from high voltage shocks. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 It is a schematic diagram of the overall cross-sectional structure of a semiconductor module with a laminated busbar structure according to the present invention;

[0027] Figure 2 It is a schematic diagram of the overall side view structure of a semiconductor module with a laminated busbar structure according to the present invention;

[0028] Figure 3 It is a schematic front view of the structure of a semiconductor module with a laminated busbar structure according to the present invention.

[0029] In the figure: 1. Base plate; 2. Chip body; 3. Busbar No. 1; 4. Busbar No. 2; 5. Inductor assembly; 6. Cover plate; 7. Connecting plate; 8. Connecting hole; 9. Ceramic copper clad board; 10. Driver board. DETAILED DESCRIPTION

[0030] Example 1

[0031] See also Figures 1 to 3 A semiconductor module with a laminated busbar structure includes a base plate 1, a ceramic copper-clad plate 9 is arranged on the upper part of the base plate 1, a chip body 2 is arranged on the upper part of the ceramic copper-clad plate 9, a No. 1 busbar 3 is detachably connected to the upper part of the chip body 2, a No. 2 busbar 4 is detachably connected to the upper end of the No. 1 busbar 3, a driving board 10 is arranged between the chip body 2 and the No. 1 busbar 3, the driving board 10 is connected to the signal terminal on the inductor component 5, and is used to control and protect each chip body 2, the driving board 10 is located below the No. 1 busbar 3 and the No. 2 busbar 4, and the driving board 10 is used to control the chip body 2, an inductor component 5 is arranged above the No. 2 busbar 4, and the inductor component 5 A cover plate 6 is detachably connected to the top, and two ends of busbar No. 1 3 and two ends of busbar No. 2 4 are fixedly connected with two sets of connecting plates 7. The middle part of the upper end of the two sets of connecting plates 7 is provided with connecting holes 8 that pass through from top to bottom. Busbar No. 1 3 is set as a P-type terminal, and busbar No. 2 4 is set as an N-type terminal, that is, busbar No. 1 3 is positive, and busbar No. 2 4 is negative. The current directions of busbar No. 1 3 and busbar No. 2 4 are opposite, that is, when busbar No. 1 3 and busbar No. 2 4 are in operation, the effect of reducing inductance can be achieved. When outside the power supply, the current of busbar No. 1 3 and busbar No. 2 4 flows from the positive pole to the negative pole, and inside the power supply, the current of busbar No. 1 3 and busbar No. 2 4 flows from the negative pole back to the positive pole.

[0032] Busbar No. 1 3 and busbar No. 2 4 are connected in a stacked manner, and the lengths of busbar No. 1 3 and busbar No. 2 4 are different, which makes the busbar stacking structure different from the prior art. The two layers of busbars are stacked alternately with each other, reducing costs while achieving the same function.

[0033] The chip body 2 is located below the driving board 10 , and the chip body 2 is located inside the base plate 1 , which further protects the semiconductor chip from high voltage shock.

[0034] The upper surfaces of busbar No. 1 3 and busbar No. 2 4 are both provided with epoxy powder coated busbars, which are combined with nano silver ions, and an insulating layer is provided between busbar No. 1 3 and busbar No. 2 4. The epoxy powder coating used is combined with nano silver ions, so that the mechanical properties and corrosion resistance of the semiconductor chip can be significantly improved. Busbar No. 1 3 and busbar No. 2 4 can cover all chip bodies 2. The distance between busbar No. 1 3 and busbar No. 2 4 is very close. Except for the insulating layer, it is different from the traditional packaging structure. The distance between the two busbars in the traditional packaging structure is farther. Busbar No. 1 3 and busbar No. 2 4 cover the chip body 2. In comparison, the two busbars in the present invention have better effects. The diameter of the large circular hole on the connecting plate 7 is 6.5 cm, the diameter of the small circular hole is 4.8 cm, and the length and width of busbar No. 1 3 and busbar No. 2 4 are 76.59±0.25 cm and 34.00±0.25 cm respectively.

[0035] The doping ions of epoxy powder coated busbars are nano silver ions, boron ions or aluminum ions, which help to slow down or disperse high voltage spikes.

[0036] The use steps of the present invention are as follows: In the present invention, a busbar No. 1 3 and a busbar No. 2 4 are arranged on the chip body 2, and the busbar No. 1 3 and the busbar No. 2 4 are laminated and connected, and both the busbar No. 1 3 and the busbar No. 2 4 are provided with epoxy powder coated busbars. The structural design of the laminated busbar is beneficial to reducing the stray inductance in the loop, thereby effectively reducing the voltage spike, so that when the semiconductor chip is in use, the stray inductance is reduced, and the stability and reliability of the chip can be improved.

[0037] Example 2

[0038] See also Figures 1 to 3 A semiconductor module with a laminated busbar structure comprises a base plate 1, a ceramic copper-clad plate 9 is arranged on the upper part of the base plate 1, a chip body 2 is arranged on the upper part of the ceramic copper-clad plate 9, a busbar No. 1 3 is detachably connected to the upper part of the chip body 2, a busbar No. 2 4 is detachably connected to the upper end of the busbar No. 1 3, a driving board 10 is arranged between the chip body 2 and the busbar No. 1 3, the driving board 10 is located below the busbar No. 1 3 and the busbar No. 2 4, and the driving board 10 is used to control the chip body 2, an inductor component 5 is arranged above the busbar No. 2 4, a cover plate 6 is detachably connected to the upper part of the inductor component 5, two ends of the busbar No. 1 3 and the two ends of the busbar No. 2 4 are fixedly connected with two groups of connecting plates 7, and the middle part of the upper end of the two groups of connecting plates 7 is provided with connecting holes 8 that pass through from top to bottom.

[0039] The doping ions of the chip body 2 are nitrogen ions, carbon ions or phosphorus ions, and the structural design of the laminated busbar is conducive to reducing the stray inductance in the loop, thereby effectively reducing the voltage spike.

[0040] The connection plate 7 is metallically connected to one side of the chip body 2, which effectively reduces voltage spikes and reduces stray inductance when the semiconductor chip is in use.

[0041] The inductor assembly 5 is provided with a plurality of inductor plates, and the plurality of inductor plates are all metallically connected to one side of the chip body 2, thereby improving the stability and reliability of the chip.

[0042] The use steps of the present invention are as follows: The present invention can improve the current balance of semiconductor chips through the laminated busbar structure, and also help to reduce the local heat accumulation caused by uneven current, further protecting the semiconductor chips from overheating damage. The epoxy powder coating used is combined with nano silver ions, so that the mechanical properties and corrosion resistance of the semiconductor chips can be significantly improved, which helps to slow down or disperse high voltage spikes, and further protect the semiconductor chips from high voltage shocks.

[0043] The above shows and describes the basic principles, main features and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited by the above embodiments. The above embodiments and descriptions are only preferred examples of the present invention and are not intended to limit the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A semiconductor module with a laminated busbar structure, comprising a base plate (1), characterized in that: A ceramic copper-clad plate (9) is arranged on the upper part of the bottom plate (1), a chip body (2) is arranged on the upper part of the ceramic copper-clad plate (9), a No. 1 busbar (3) is detachably connected to the upper part of the chip body (2), a No. 2 busbar (4) is detachably connected to the upper end of the No. 1 busbar (3), a driving board (10) is arranged between the chip body (2) and the No. 1 busbar (3), the driving board (10) is located below the No. 1 busbar (3) and the No. 2 busbar (4), and the driving board (10) is used to control the chip body (2), an inductor assembly (5) is arranged above the No. 2 busbar (4), a cover plate (6) is detachably connected to the upper part of the inductor assembly (5), two groups of connecting plates (7) are fixedly connected to the two ends of the No. 1 busbar (3) and the two ends of the No. 2 busbar (4), and the middle part of the upper end of the two groups of connecting plates (7) is provided with connecting holes (8) that pass through from top to bottom.

2. The semiconductor module with a laminated busbar structure according to claim 1, characterized in that: The first busbar (3) and the second busbar (4) are connected in a stacked manner, and the first busbar (3) and the second busbar (4) have different lengths.

3. The semiconductor module with a laminated busbar structure according to claim 1, characterized in that: The chip body (2) is located below the driving board (10), and the chip body (2) is located inside the bottom board (1).

4. The semiconductor module with a laminated busbar structure according to claim 1, characterized in that: The upper surfaces of the No. 1 busbar (3) and the No. 2 busbar (4) are both provided with epoxy powder coated busbars, the epoxy powder coated busbars are combined with nano silver ions, and an insulating layer is provided between the No. 1 busbar (3) and the No. 2 busbar (4).

5. The semiconductor module with a laminated busbar structure according to claim 4, characterized in that: The doping ions of the epoxy powder coating busbar are nano silver ions, boron ions or aluminum ions.

6. The semiconductor module with a laminated busbar structure according to claim 1, characterized in that: The doping ions of the chip body (2) are nitrogen ions, carbon ions or phosphorus ions.

7. The semiconductor module with a laminated busbar structure according to claim 1, characterized in that: The connecting plate (7) is metallurgically connected to one side of the chip body (2).

8. The semiconductor module with a laminated busbar structure according to claim 1, characterized in that: The inductor component (5) is provided with a plurality of inductor plates, and the plurality of inductor plates are all metallically connected to one side of the chip body (2).

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