Semiconductor processing equipment

Abstract

The invention discloses semiconductor processing equipment, which comprises a shell, a base for supporting the shell, a reaction cavity and a wafer bearing structure arranged in the reaction cavity, and is characterized in that the reaction cavity comprises a reaction cavity body I and a reaction cavity body II; the shell is provided with a material taking and placing port corresponding to the wafer bearing structure. The equipment further comprises a position adjusting structure acting on the reaction cavity II, and the position adjusting structure enables the reaction cavity II to do vertical movement in the shell relative to the reaction cavity I. According to the invention, a split design is adopted in the structure, vertical separation can be carried out, the equipment space is compact, the thermal insulation effect is better due to the inner and outer double-layer design, in addition, independent supporting measures do not need to be arranged on the wafer bearing structure, the space is effectively utilized, the heating function is also achieved, and the function integration degree is good.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a semiconductor processing equipment. Background Art

[0002] Semiconductor processing equipment, such as thin film deposition equipment, heat treatment equipment and etching equipment, etc., all include a reaction chamber, and semiconductor substrates or wafers and other components are placed in the reaction chamber for corresponding processing. At the same time, a support body for supporting semiconductor substrates or wafers and other components is also provided inside the reaction chamber. When the above-mentioned semiconductor substrates or wafers and other components are taken out from the support body or placed on the support body, there are usually two structures in the industry. One is to set a cover body on the upper part of the reaction chamber. When the above-mentioned semiconductor substrates or wafers and other components are taken out from the support body or placed on the support body, the cover body is opened by a mechanism structure, and the above-mentioned semiconductor substrates or wafers and other components are taken out from the support body or placed on the support body by a device such as a manipulator. The second structure is to design a vertical motion device that cooperates with the support body, so that the vertical motion device drives the support body out of the reaction chamber or into the reaction chamber, thereby completing the operation of taking out or putting in the above-mentioned semiconductor substrates or wafers and other components from the support body. The problems existing in the above two structures are that the structure is complicated, which is not conducive to reducing costs, and requires a large operating space, which is not conducive to reducing the occupied space of the equipment. At the same time, when the cover is opened or the support body is removed from the reaction chamber, the above structure will affect the atmosphere in the reaction chamber (such as causing external gas to enter or air pressure changes) or cause heat loss, etc. Therefore, it is necessary to add corresponding sealing devices, etc., which makes the equipment structure more complicated. Summary of the invention

[0003] In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a semiconductor processing equipment with high working flexibility and compact structure, which can realize effective use of space.

[0004] A semiconductor processing device comprises a shell, a base for supporting the shell, a reaction chamber and a wafer bearing structure installed in the reaction chamber, wherein the reaction chamber comprises a reaction chamber body I and a reaction chamber body II; the shell is provided with a material taking and discharging port corresponding to the wafer bearing structure; the device also comprises a position adjustment structure acting on the reaction chamber body II, which enables the reaction chamber body II to move vertically relative to the reaction chamber body I inside the shell.

[0005] In one embodiment, the housing includes a shell I and a shell II, wherein the shell II is located above the shell I, and the shell I is fixedly mounted on a base, and the base is a frame structure.

[0006] Furthermore, the reaction chamber I is located in the shell I, and the reaction chamber II is located in the shell II; the reaction chamber I includes a first insulation layer and a second insulation layer coated and fixed on the first insulation layer, and the reaction chamber II includes a third insulation layer and a fourth insulation layer coated and fixed on the third insulation layer.

[0007] Furthermore, a receiving space for accommodating a wafer supporting structure is formed between the first thermal insulation layer and the third thermal insulation layer, and the wafer supporting structure includes two groups of electrode columns arranged horizontally, and a heating plate and a support plate arranged in parallel in the vertical direction; the heating plate is vertically arranged between the two groups of electrode columns, and the heating plate and the electrode heads of the electrode columns are fixed, and the support plates are spaced apart and distributed between the heating plates; a support column is insulated and connected to the electrode column, which is located in front of the electrode head, the support plate and the support column are fixed, and a plurality of through holes are evenly penetrated on the support plate.

[0008] Furthermore, a cover plate is fixedly installed on the top of the shell II, a bracket is installed on the base, and a lifting drive structure is provided on the upper part of the shell II, and the lifting drive structure drives the shell II to move up and down relative to the shell I; two sets of guide parts are fixedly installed on the shell II, and their sliding sleeves are arranged on the bracket rod.

[0009] In one embodiment, the device also includes an exhaust pipe for exhausting gas in the reaction chamber, an intake pipe for supplying gas into the reaction chamber, and a cooling structure located in the outer shell; the position adjustment structure includes a hollow cylinder vertically fixedly installed at the center of the cover plate, an electric cylinder fixedly installed on the hollow cylinder, a connecting rod located in the hollow cylinder and fixed at the output end of the electric cylinder, and a bellows sleeved outside the connecting rod.

[0010] Furthermore, two sets of lifting drive structures are horizontally distributed at the corresponding two side positions of the hollow cylinder, the upper end of the bellows is fixed to the connecting rod, and the lower end of the bellows is sealed and fixed to the cover plate, and the end of the connecting rod passing through the cover plate is threadedly connected to the reaction chamber II through a connector; the connecting rod is a hollow structure, and the air outlet pipe is vertically installed in the connecting rod, the air outlet end of the air outlet pipe is fixedly installed through the corresponding side wall of the connecting rod, and the air outlet end of the air outlet pipe is located above the bellows, and a groove is provided at the corresponding side wall of the hollow cylinder.

[0011] Furthermore, a channel is fixedly connected to and penetrates the corresponding side wall of the shell I, and the channel is connected to the vacuum pump; a partition for supporting the reaction chamber II is fixedly installed in the shell I, and a plurality of ventilation holes are opened on the partition; the partition is located above the channel, and the partition is arranged horizontally, and the outer surface of the partition is connected to the inner wall of the shell I.

[0012] In one embodiment, the cooling structure includes a cooling component I acting on the wafer supporting structure and a cooling component II acting on the air outlet pipe; the cooling component I includes an insulating shell installed in the shell I and a coolant inlet pipe located in the insulating shell; the air inlet pipe is located in the insulating shell; the cooling component II includes a water cooling channel formed between the air outlet pipe and the connecting rod, and a water inlet pipe and a water outlet pipe fixedly installed on the connecting rod.

[0013] Compared with the prior art, the beneficial effects of the present invention are: the structure adopts a split design, which can be separated into upper and lower parts, has high working flexibility, compact equipment space and the inner and outer double-layer design makes the thermal insulation effect better, in addition, there is no need to set up separate supporting measures on the wafer supporting structure, which can effectively utilize the space, and it also has a heating function, with good functional integration and no need for additional heating measures. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 Shown is a schematic structural diagram of a semiconductor processing equipment provided by the present invention.

[0015] Figure 2 Shown Figure 1 Internal diagram of .

[0016] Figure 3 Shown Figure 2 Perspective view of point A in the middle.

[0017] Figure 4 Shown Figure 3 A magnified view of the wafer-carrying structure.

[0018] Figure 5 Shown Figure 4 Top view of the .

[0019] Figure 6 Shown Figure 5 Schematic diagram of the split.

[0020] Figure 7 Shown Figure 2 Perspective view of point B in the middle.

[0021] Figure 8 Shown Figure 1 Schematic diagram of opening the middle shell, in which the arrow indicates the moving direction of shell II.

[0022] Fig. 9 Shown Figure 2 Schematic diagram of closing the reaction chamber, in which the arrow indicates the moving direction of the reaction chamber II.

[0023] Main component symbols

[0024] 1. Shell I; 2. Shell II; 3. Base; 4. Channel; 5. Partition; 6. Cover plate; 7. Lifting drive structure; 8. Reaction chamber I; 9. Reaction chamber II; 10. First insulation layer; 11. Second insulation layer; 12. Third insulation layer; 13. Fourth insulation layer; 14. Electrode column; 15. Heating plate; 16. Support plate; 17. Hollow cylinder; 18. Electric cylinder; 19. Connecting rod; 20. Bellows; 21. Exhaust pipe; 22. Water cooling channel; 23. Coolant inlet pipe; 24. Inlet pipe.

[0025] The above description of the main component symbols is combined with the accompanying drawings and specific implementation methods to further illustrate the present invention in detail. DETAILED DESCRIPTION

[0026] The present invention is described in detail below with reference to the accompanying drawings.

[0027] See also Figure 1-9 This embodiment provides a semiconductor processing device, which can also be used in the heat treatment of wafers. The device includes a shell composed of a shell I1 and a shell II2, a base 3 for supporting the shell, two sets of lifting drive structures 7 acting on the shell II2, a reaction chamber composed of a reaction chamber I8 and a reaction chamber II9, a wafer supporting structure installed in the reaction chamber, a position adjustment structure acting on the reaction chamber II9, an outlet pipe 21 for exhausting gas in the reaction chamber, an inlet pipe 24 for feeding gas into the reaction chamber, and a cooling structure located in the shell.

[0028] Shell II2 is located above shell I1, and shell I1 is fixedly mounted on base 3, and base 3 is a frame structure. Shell I1 and shell II2 are both cylindrical structures, and shell I1 and shell II2 have the same diameter. A material taking-in and discharging port and a temperature measuring port are provided on the front wall of shell II2, and the temperature measuring port is located at a position corresponding to one side of the material taking-in and discharging port, and the material taking-in and discharging port is arranged close to shell I1; a baffle door for covering the material taking-in and discharging port is installed on shell II2 through hinges, and a thermocouple is fixedly mounted on shell II2, and the thermocouple is located at a position corresponding to the other side of the material taking-in and discharging port. In this embodiment, silicon carbide wafers are taken out / put in along the material taking-in and discharging port under the action of a manipulator (not shown in the figure), and the temperature measuring element (not shown in the figure) and the thermocouple inserted through the temperature measuring port cooperate to detect the temperature in the reaction chamber. Correspondingly, an opening corresponding to the temperature measuring port is also provided on the reaction chamber II9 to provide a channel for the detection end of the temperature measuring element to extend into the reaction chamber.

[0029] A channel 4 is fixedly connected through the corresponding side wall of the shell I1, and the channel 4 is connected to the vacuum pump. The vacuum pump (not shown) runs through the channel 4 to evacuate the shell, thereby forming a vacuum outside the reaction chamber to avoid heat loss and enhance the thermal insulation effect. A partition 5 for supporting the reaction chamber II9 is ​​fixedly installed in the shell I1, and a plurality of ventilation holes are opened through it, and the plurality of ventilation holes are evenly distributed. The partition 5 is located above the channel 4, and the partition 5 is arranged horizontally, and the outer surface of the partition 5 is connected to the inner wall of the shell I1.

[0030] In this embodiment, shell I1 and shell II2 constitute an outer shell, and shell II2 is moved up and down by the lifting drive structure 7, thereby realizing the opening or closing of the outer shell. At the same time, reaction chamber I8 and reaction chamber II9 constitute a reaction chamber to provide a processing space for silicon carbide, and reaction chamber II9 is ​​moved up and down by the position adjustment structure, thereby realizing the opening or closing of the reaction chamber. The opening and closing adjustment of the reaction chamber is not limited by the outer shell. When the silicon carbide wafer needs to be taken out / put in, the reaction chamber is opened and the outer shell remains closed, which can prevent the external environment from affecting the reaction chamber environment. The equipment of this embodiment adopts a split design in structure, which can be separated up and down, has high working flexibility, compact equipment space, and the inner and outer double-layer design makes the thermal insulation effect better.

[0031] A cover plate 6 is fixedly installed on the top of the shell II2, and a bracket is installed on the base 3. The shell II2 moves up and down relative to the shell I1 under the action of the lifting drive structure 7. The lifting drive structure 7 is composed of a hydraulic cylinder and a piston rod. The hydraulic cylinder is fixedly installed on the top of the bracket, and the end of the piston rod facing away from the hydraulic cylinder is vertically fixedly connected to the cover plate 6, and the piston rod moves through the bracket. Two sets of guides are fixedly installed on the shell II2, which are slidably sleeved on the bracket rod, and the guides provide mobile positioning on both sides of the shell II2, thereby ensuring the stability of the up and down movement of the shell II2.

[0032] In this embodiment, a lifting drive structure 7 is provided to drive the shell II2 to make a vertical linear motion, so as to realize the separation and closing between the shell I1 and the shell II2. When the annealing treatment is performed, the shell I1 and the shell II2 are in a closed state. At this time, the outer shell is an integral whole, and the equipment has a double-layer structure with good thermal insulation effect. When cleaning or maintenance of the structure in the reaction chamber is required, the shell I1 and the shell II2 are controlled to separate so that the outer shell is in an open state.

[0033] The reaction chamber I8 is located in the shell I1, and the reaction chamber II9 is ​​located in the shell II2, and the cross-sectional specifications of the reaction chamber I8 and the reaction chamber II9 are consistent. The reaction chamber I8 includes a first insulation layer 10 and a second insulation layer 11 coated and fixed on the first insulation layer 10, and the reaction chamber II9 includes a third insulation layer 12 and a fourth insulation layer 13 coated and fixed on the third insulation layer 12. This embodiment is described by taking the first insulation layer 10 and the third insulation layer 12 as graphite shells, and the second insulation layer 11 and the fourth insulation layer 13 as graphite felt as an example.

[0034] In this embodiment, the silicon carbide wafer is placed in the reaction chamber through the wafer supporting structure for ion implantation. After the ion implantation is completed, heating is used to control the temperature in the reaction chamber to be higher than 1500°C. The silicon carbide wafer after ion implantation is annealed at this temperature for a period of time to achieve the purpose of improving the activation rate of the implanted ions and eliminating defects caused by lattice damage.

[0035] A receiving space for accommodating a wafer supporting structure is formed between the first thermal insulation layer 10 and the third thermal insulation layer 12. The wafer supporting structure includes two groups of electrode columns 14 arranged horizontally, four groups of heating plates 15 arranged vertically and in parallel, and three groups of support plates 16. The heating plate 15 is vertically arranged between the two groups of electrode columns 14, and the heating plate 15 and the electrode heads of the electrode columns 14 are fixed. The three groups of support plates 16 are spaced between the four groups of heating plates 15, and the electrode columns 14 are insulated and connected with support columns, which are located in front of the electrode heads. The support plates 16 are fixed to the support columns, and a plurality of through holes are evenly penetrated on the support plates 16 to facilitate the circulation of heat.

[0036] The wafer bearing structure of this embodiment adopts a design in which the electrode column 14, the heating plate 15 and the support plate 16 are combined into one body. There is no need to set up a separate support structure, and the space can be effectively utilized. The wafer bearing structure not only supports the silicon carbide wafer, but also has a heating function. The functional integration is good, and no additional heating measures are required, which saves space. This embodiment uses a graphite plate as a heating plate 15 as an example for explanation. The silicon carbide wafer is placed on the support plate 16 by heating with a resistance heating plate 15 (equivalent to a resistance heating method). This embodiment uses three groups of support plates 16 as an example for explanation. In other embodiments, according to actual processing requirements, the number of support plates 16 can be adaptively increased or decreased to accommodate the required number of silicon carbide wafers.

[0037] The position adjustment structure includes a hollow cylinder 17 vertically fixedly mounted at the center of the cover plate 6, an electric cylinder 18 fixedly mounted on the hollow cylinder 17, a connecting rod 19 located in the hollow cylinder 17 and fixed at the output end of the electric cylinder 18, and a bellows 20 sleeved outside the connecting rod 19. Two sets of lifting drive structures 7 are horizontally distributed at the corresponding two sides of the hollow cylinder 17. The upper end of the bellows 20 is fixed to the connecting rod 19, and the lower end of the bellows 20 is sealed and fixed to the cover plate 6. The bellows 20 has the ability of elastic deformation. When performing the position adjustment operation of the reaction chamber II9, the connecting rod 19 is driven by the electric cylinder 18 to move up and down. At this time, the bellows 20 deforms adaptively with the connecting rod 19, thereby ensuring the sealing of the structure and ensuring that the gas is output in a directional manner along the channel provided by the outlet pipe 21 to avoid overflow.

[0038] A guide cavity for accommodating the electric cylinder 18 is provided through the bracket, the connecting rod 19 is a hollow structure, and the air outlet pipe 21 is vertically installed in the connecting rod 19. The outlet end of the air outlet pipe 21 is fixedly installed through the corresponding side wall of the connecting rod 19, and the outlet end of the air outlet pipe 21 is located above the corrugated pipe 20. The air outlet pipe 21 is fixedly installed through the reaction chamber II9 and is connected to the receiving space. A groove is provided at the corresponding side wall of the hollow cylinder 17. The gas in the reaction chamber is discharged from the connecting rod 19 along the air outlet pipe 21, and then discharged to the outside of the equipment through the groove. At the same time, the groove also serves as an installation channel for the water inlet and outlet accessories in the cooling component II.

[0039] The end of the connecting rod 19 passing through the cover plate 6 is threadedly connected to the reaction chamber II9 through a connecting piece. In this embodiment, the specific connection mode of the connecting rod 19 and the reaction chamber II9 is ​​as follows: a connecting piece is fixedly installed through the reaction chamber II9, and a threaded cavity for adapting the connecting rod 19 is provided on the connecting piece. The lower end of the connecting rod 19 is screwed into the connecting piece through the threaded cavity, thereby completing the installation of the connecting rod 19 on the reaction chamber II9, and a through groove is provided on the connecting piece, and the air outlet pipe 21 passes through the reaction chamber II9 along the through groove.

[0040] The cooling structure includes a cooling component I acting on the wafer bearing structure and a cooling component II acting on the air outlet pipe 21. The cooling component I includes an insulating shell installed in the shell I1 and a coolant inlet pipe 23 located in the insulating shell. The portion of the coolant inlet pipe 23 located on the wafer bearing structure is built into the electrode column 14, and the coolant is passed into the coolant inlet pipe 23 to achieve the purpose of cooling the electrode column 14 based on thermal convection.

[0041] The end of the electrode column 14 that passes through the reaction chamber I8 is located in the insulating shell, and the insulating shell is provided with an electrode terminal, which is fixed to the electrode column 14. A mounting cavity is provided through the center of the base 3, which is used to accommodate the electrode terminal, the air inlet pipe 24 and the coolant inlet pipe 23. The insulating shell is fixed between the base 3 and the reaction chamber II9, and the air inlet pipe 24 is located in the insulating shell, and the outlet end of the air inlet pipe 24 passes through the reaction chamber I8, and the air inlet end of the air inlet pipe 24 passes through the base 3. When the equipment of this embodiment is used to perform surface treatments such as ion implantation and thin film deposition on silicon carbide wafers, the reaction gas is fed in through the air inlet pipe 24. After the high-temperature annealing treatment is completed, the cooling gas is fed in through the air inlet pipe 24 to cool down. It should be noted that this embodiment is described by taking the direction of gas entering from the bottom and discharging from the top as an example. In other embodiments, the upper intake and the lower exhaust are not excluded, which will not be repeated here.

[0042] The cooling assembly II includes a water cooling channel 22 formed between the air outlet pipe 21 and the connecting rod 19, and a water inlet pipe and a water outlet pipe fixedly mounted on the connecting rod 19. The water inlet pipe and the water outlet pipe are respectively fixedly mounted on the corresponding two side walls of the connecting rod 19, and the water inlet pipe and the water outlet pipe are both arranged above the corrugated pipe 20, and the water inlet end of the water inlet pipe and the water outlet end of the water outlet pipe extend to the outside of the device through the slot. In this embodiment, based on the cold water passing into the water inlet pipe, the cold water fills the water cooling channel 22, and the purpose of cooling the air outlet pipe 21 is achieved based on thermal convection.

[0043] In this embodiment, the gas outlet pipe 21 is combined with a position adjustment structure for lifting the reaction chamber II9, so that this part of the structure is compact and occupies a small space. In addition, it also has a cooling function and can cool the gas synchronously during exhaust.

[0044] In specific implementation, this embodiment can be applied to the annealing process of silicon carbide (SiC), because silicon carbide (SiC) is one of the third-generation wide bandgap semiconductor materials, with the advantages of large bandgap width, high thermal conductivity, large breakdown electric field strength, high saturated electron mobility and good chemical stability. It is the preferred semiconductor material for making high-performance power electronic devices, and is gradually replacing silicon-based electronic devices in some application fields. In addition, silicon carbide power devices also have the characteristics of high temperature resistance, high voltage resistance and low loss, and have obvious advantages in the fields of new energy vehicles, photovoltaic power generation, smart grids and rail transportation. Ion implantation is a key process in the development of silicon carbide devices. Since the ion implantation process will cause the displacement of lattice atoms, and after the implantation, it will cause a certain degree of lattice damage to the surface and inside of SiC, thereby affecting the performance of the device. In order to improve the activation rate of the implanted ions and eliminate the defects caused by lattice damage, a high-temperature annealing device must be used to perform high-temperature annealing on the SiC after the ion implantation. During the high-temperature annealing process, the annealing conditions are very important. To achieve a good annealing effect, the annealing temperature of SiC is generally required to be higher than 1500°C and maintain a certain annealing time. There are also requirements for the heating rate, protective gas type and gas pressure, etc. The structure disclosed in this embodiment is fully applicable to the above scenarios.

[0045] In summary, the semiconductor processing equipment of this embodiment has the following advantages: the structure adopts a split design, which can be separated into upper and lower parts, with high working flexibility, compact equipment space and double-layer design inside and outside for better insulation effect. In addition, there is no need to set up separate support measures on the wafer supporting structure, which can effectively utilize the space, and it also has a heating function, with good functional integration and no need for additional heating measures.

[0046] The naming of each component involved is based on its function described in the specification and is not limited to the specific terms used in the present invention. Those skilled in the art may also choose other terms to describe the names of the components of the present invention.

Claims

1. A semiconductor processing device, comprising a housing, a base (3) for supporting the housing, a reaction chamber, and a wafer supporting structure installed in the reaction chamber, characterized in that: The reaction chamber comprises a reaction chamber body I (8) and a reaction chamber body II (9); the shell is provided with a material loading and unloading port corresponding to the wafer supporting structure; the device also comprises a position adjustment structure acting on the reaction chamber body II (9), which enables the reaction chamber body II (9) to move vertically inside the shell relative to the reaction chamber body I (8).

2. A semiconductor processing equipment according to claim 1, characterized in that: The housing comprises a shell I (1) and a shell II (2), wherein the shell II (2) is located above the shell I (1), and the shell I (1) is fixedly mounted on a base (3), and the base (3) is a frame structure.

3. A semiconductor processing equipment according to claim 2, characterized in that: The reaction chamber I (8) is located in the shell I (1), and the reaction chamber II (9) is located in the shell II (2); The reaction chamber I (8) comprises a first thermal insulation layer (10) and a second thermal insulation layer (11) coated and fixed on the first thermal insulation layer (10), and the reaction chamber II (9) comprises a third thermal insulation layer (12) and a fourth thermal insulation layer (13) coated and fixed on the third thermal insulation layer (12).

4. A semiconductor processing equipment according to claim 3, characterized in that: A receiving space for accommodating a wafer bearing structure is formed between the first thermal insulation layer (10) and the third thermal insulation layer (12), and the wafer bearing structure comprises two groups of electrode columns (14) arranged horizontally, a heating plate (15) and a support plate (16) arranged vertically in parallel; The heating plate (15) is vertically arranged between two groups of electrode columns (14), and the heating plate (15) and the electrode heads of the electrode columns (14) are fixed to each other, and the support plates (16) are distributed at intervals between the heating plates (15); a support column is insulated and connected to the electrode column (14), which is located in front of the electrode head, the support plate (16) and the support column are fixed to each other, and a plurality of through holes are evenly penetrated on the support plate (16).

5. A semiconductor processing equipment according to claim 4, characterized in that: A cover plate (6) is fixedly mounted on the top of the shell II (2), a bracket is mounted on the base (3), and a lifting drive structure (7) is provided on the upper part of the shell II (2), and the lifting drive structure (7) drives the shell II (2) to move up and down relative to the shell I (1); Two sets of guide members are fixedly mounted on the housing II (2), and the guide members are slidably sleeved on the bracket rods.

6. A semiconductor processing equipment according to claim 5, characterized in that: The device also includes an outlet pipe (21) for discharging gas in the reaction chamber, an inlet pipe (24) for feeding gas into the reaction chamber, and a cooling structure located in the housing; The position adjustment structure comprises a hollow cylinder (17) vertically fixedly mounted at the center of the cover plate (6), an electric cylinder (18) fixedly mounted on the hollow cylinder (17), a connecting rod (19) located in the hollow cylinder (17) and fixed at the output end of the electric cylinder (18), and a bellows (20) sleeved outside the connecting rod (19).

7. A semiconductor processing equipment according to claim 6, characterized in that: Two sets of lifting drive structures (7) are horizontally distributed at corresponding positions on both sides of the hollow cylinder (17); the upper end of the bellows (20) is fixed to the connecting rod (19), and the lower end of the bellows (20) is sealed and fixed to the cover plate (6); the end of the connecting rod (19) passes through the cover plate (6) and is threadedly connected to the reaction chamber II (9) through a connecting piece; The connecting rod (19) is a hollow structure, and the air outlet pipe (21) is vertically installed in the connecting rod (19). The air outlet end of the air outlet pipe (21) is fixedly installed through the corresponding side wall of the connecting rod (19), and the air outlet end of the air outlet pipe (21) is located above the corrugated pipe (20). The corresponding side wall of the hollow cylinder (17) is provided with a groove.

8. The semiconductor processing equipment according to claim 7, characterized in that: A channel (4) is fixedly connected and penetrated at a corresponding side wall of the shell I (1), and the channel (4) is connected to a vacuum pump; a partition (5) for supporting the reaction chamber II (9) is fixedly installed in the shell I (1), and a plurality of ventilation holes are formed on the partition; The partition (5) is located above the channel (4) and is arranged transversely, and the outer surface of the partition (5) is connected to the inner wall of the shell I (1).

9. The semiconductor processing equipment according to claim 8, characterized in that: The cooling structure comprises a cooling component I acting on the wafer supporting structure and a cooling component II acting on the air outlet pipe (21); the cooling component I comprises an insulating shell installed in the shell I (1) and a cooling liquid inlet pipe (23) located in the insulating shell; the air inlet pipe (24) is located in the insulating shell; The cooling assembly II comprises a water cooling channel (22) formed between the air outlet pipe (21) and the connecting rod (19), and a water inlet pipe and a water outlet pipe fixedly mounted on the connecting rod (19).

Images