Multifunctional organic memristor based on conversion bridge distribution strategy and preparation method and application thereof

Abstract

The invention provides a multifunctional organic memristor based on a conversion bridge distribution strategy and a preparation method and application thereof, and belongs to the technical field of organic memristors. According to a conversion bridge distribution strategy provided by the invention, an organic semiconductor with relatively strong interaction force between an elastomer with relatively high compatibility and active metal ions (such as aluminum ions, silver ions, copper ions and the like) is selected, and an organic functional layer with a phase separation structure close to thermodynamic equilibrium is prepared through simple physical blending. By further adjusting the content of an organic semiconductor material in the organic functional layer, the type of a conductive path in the functional layer is accurately regulated and controlled, and bimodal neuromorphic signal processing is realized in the same material system. The invention provides a strategy of the stretchable organic memristor which has universality, can finely adjust the types of conductive paths, is high in preparation yield and stability and can perform multi-mode signal processing, and provides a new thought for later development of biocompatible wearable equipment and artificial intelligence application.

Description

Technical Field

[0001] The present invention relates to the technical field of organic memristors, and in particular to a multifunctional organic memristor based on a conversion bridge distribution strategy and a preparation method and application thereof. Background Art

[0002] In the era of rapid development of the Internet of Things, big data, and artificial intelligence, memristors are used to simulate human brain neural networks and realize the functions of parallel computing and storage-computing integration. This technology is expected to solve the problems of high power consumption and delayed storage in von Neumann architecture data systems based on the separation of storage and computing. With the development of neuromorphic devices and the expansion of practical application scenarios, memristors are expected to be suitable for high-performance chips, brain-computer interfaces, electronic skins, wearable devices, and medical diagnosis. This also puts higher requirements on the research and development of memristors: in addition to excellent and stable electrical properties, memristors also need to have mechanical adaptability to various mechanical deformations and can withstand external forces such as stretching and twisting. In order to develop memristors with both stable electrical properties and good mechanical stretching properties, organic materials with advantages such as softness, light weight, easy to adjust structure, solution processability, and good biocompatibility have become one of the most promising materials for preparing stretchable memristor functional layers.

[0003] The main limitation of stretchable organic memristors is that it is difficult to effectively control the formation and destruction of multiple conductive pathways, resulting in low device productivity, poor uniformity, poor stability, and simple functions. In order to solve this problem, researchers have made efforts in many aspects. For example, in terms of improving stretchability, flexible segments are introduced into the main chain or side chain of organic memristor layer materials such as polyfluorene and polyimide, which are currently studied more, to obtain intrinsically stretchable block polymers. Memristors constructed based on these new materials have realized storage behaviors such as write-once, read-many (WORM) type and erasable (Flash) type, but these materials are prone to irreversible plastic deformation and do not have the excellent mechanical properties of elastomers. In terms of conductive pathway control, inorganic conductive materials such as metal nanoparticles and liquid metals are physically blended with elastomers with excellent mechanical properties. The distribution of conductive materials in the elastomer is regulated by applying an external bias voltage, and stretchable memristors can also be constructed. However, in the process of blending inorganic conductive materials and elastomers, one of the most important problems is the compatibility of materials. Since inorganic conductive materials and elastomers usually have different chemical properties and molecular structures, they may repel each other or be difficult to disperse evenly when blended. This situation causes the vertical direction of the blended film to present phase separation phenomena caused by thermodynamic imbalance such as "inorganic conductive material-elastomer-inorganic conductive material" and "inorganic conductive material-elastomer", which causes the performance of the memristor based on this to be unstable and the reliability to be poor. In addition, there are few types of stretchable organic memristors reported so far, and the stability of the comprehensive electrical performance of the device is poor. These memristors often exhibit a single memristive behavior, making it difficult to achieve complex multimodal signal processing, and the diversity of functions is still lacking. At the same time, the existing working mechanism is usually targeted at the specific structure of a specific system and lacks universality. Therefore, it is necessary to propose a strategy for a stretchable organic memristor that is universal, can finely adjust the type of conductive path, prepares high yield and stability, and can perform multimodal signal processing, so as to further promote the development of biocompatible wearable devices and artificial intelligence applications. Summary of the invention

[0004] The present invention aims at the problems of severe phase separation and single function caused by poor compatibility between components in the method of realizing stretchable organic functional layer by physical blending, and proposes a novel conversion bridge distribution strategy. By blending organic semiconductors with suitable compatibility with elastomers, the organic semiconductors are used to form conversion bridges, and the elastomers are used as matrix materials to provide excellent mechanical properties. An organic functional layer with a phase separation structure with continuous distribution in the longitudinal direction formed by conversion bridges is prepared. Due to the suitable compatibility, the phase separation structure of the blended film is close to thermodynamic equilibrium and has high stability. Based on this type of organic functional layer, a multifunctional organic memristor is constructed.

[0005] In order to achieve the above object, the present invention provides the following technical solutions:

[0006] One of the technical solutions of the present invention is an organic functional layer, comprising an organic semiconductor material and an elastomeric material; the organic semiconductor material is selected from at least one of poly[2,5-bis(3-tetradecylthiophene-2-yl)thiophene], poly(3,5-pyridine), poly(N-vinylcarbazole), polycarbazole phosphate and triphenyl phosphate; the elastomeric material is selected from at least one of polystyrene-block-polyethylene(ethylene-ran-butylene)-block-polystyrene, polystyrene butadiene copolymer, polyisobutylene and chloroprene rubber;

[0007] The ratio of the organic semiconductor material to the total of the organic semiconductor material and the elastomer material is 5-50 wt %.

[0008] The second technical solution of the present invention is a multifunctional organic memristor based on a conversion bridge distribution strategy, comprising the above-mentioned organic functional layer.

[0009] A third technical solution of the present invention is a method for preparing the multifunctional organic memristor based on the conversion bridge distribution strategy, comprising the following steps:

[0010] Step 1, preparing a bottom electrode on a substrate by vacuum evaporation;

[0011] Step 2, dissolving the organic semiconductor material and the elastomer material in a solvent, coating the resulting solution on the surface of the bottom electrode, and then annealing to obtain an organic functional layer;

[0012] Step 3: prepare a top electrode on the organic functional layer by vacuum evaporation.

[0013] A fourth technical solution of the present invention is an application of the above-mentioned multifunctional organic memristor based on the conversion bridge distribution strategy in biocompatible wearable devices and artificial intelligence.

[0014] The present invention discloses the following technical effects:

[0015] Based on the conversion bridge distribution strategy, the present invention selects an elastomer with high compatibility and an organic semiconductor with strong interaction with active ions (such as aluminum ions, silver ions, and copper ions). Through simple solution blending, a memristor organic functional layer with relatively balanced thermodynamics in the vertical direction and excellent mechanical and electrical properties is obtained. The elastic recovery rate of the organic functional layer is more than 95%, and the electrical properties are still stable after 1000 cycles of stretching at 100% strain. At the same time, by finely adjusting the content of organic semiconductor materials in the functional layer, the type of conductive path in the functional layer can be accurately controlled, and volatile and non-volatile electrical behaviors can be realized in the same material system, thereby realizing dual-modal neuromorphic signal processing.

[0016] The present invention proposes a strategy for a stretchable organic memristor that is universal, can finely adjust the type of conductive pathways, has a high preparation yield, high stability, and can perform multimodal signal processing, which is expected to further promote the development of biocompatible wearable devices and artificial intelligence applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0018] Figure 1 Schematic diagram of the structure of a memristor based on a conversion bridge distribution strategy in Example 1 of the present invention;

[0019] Figure 2 It is a cross-sectional TEM image of the device in Example 1 of the present invention and a schematic diagram of the structure of the memristor functional layer based on the conversion bridge distribution strategy;

[0020] Figure 3 The top and bottom surface morphology of the film formed by blending the organic semiconductor material with different contents and the elastomer prepared in Example 1 of the present invention (a) and the distribution diagram of the organic semiconductor material in the vertical direction of the film (b);

[0021] Figure 4 The stress-strain curves (a) of the films formed by blending organic semiconductor materials with elastomers at different contents prepared in Example 1 of the present invention and the cyclic tensile curves (b) and (c) of the films formed by blending 10 wt % organic semiconductor materials with 90 wt % elastomers;

[0022] Figure 5 This is a current-voltage curve of an organic memristor constructed based on a thin film formed by blending organic semiconductor materials with different contents of an elastomer in Example 1 of the present invention;

[0023] Figure 6 The resistance state retention characteristics (a) and productivity (b) of the organic memristor constructed based on the thin film formed by blending organic semiconductor materials with different contents and elastomers in Example 1 of the present invention;

[0024] Figure 7 This is a working principle diagram of an organic memristor constructed based on a thin film formed by blending 10 wt % (a) and 50 wt % (b) of an organic semiconductor material and an elastomer in Example 1 of the present invention;

[0025] Figure 8The current-voltage curves of the organic memristor constructed based on the thin film formed by blending 10 wt % of the organic semiconductor material and the elastomer in Example 1 of the present invention under different strains of loading (a) and unloading (b) and after multiple cycles of stretching at 100% strain (c);

[0026] Fig. 9 The detection rate of the online arrhythmia detection task is processed by the fully analog RC hardware system integrated with the multifunctional organic memristor based on the conversion bridge distribution strategy in Example 1 of the present invention;

[0027] Fig.10 This is a current-voltage curve of an organic memristor constructed based on a thin film formed by blending an organic semiconductor material DPPT-TT with different contents and an elastomer SEBS in Comparative Example 1 of the present invention;

[0028] Fig.11 This is a current-voltage curve of an organic memristor constructed based on a thin film formed by blending an organic semiconductor material PF8 with an elastomer SEBS at different contents in Comparative Example 2 of the present invention;

[0029] Fig.12 This is a current-voltage curve of an organic memristor constructed based on a thin film formed by blending liquid metal with different contents of organic semiconductor material and elastomer PDMS in Comparative Example 3 of the present invention. DETAILED DESCRIPTION

[0030] Various exemplary embodiments of the present invention will now be described in detail. This detailed description should not be considered as limiting the present invention, but should be understood as a more detailed description of certain aspects, features, and embodiments of the present invention.

[0031] It should be understood that the terms described in the present invention are only for describing a particular embodiment and are not intended to limit the present invention. In addition, for the numerical range in the present invention, it should be understood that each intermediate value between the upper and lower limits of the scope is also specifically disclosed. The intermediate value in any stated value or stated range, and each smaller range between any other stated value or intermediate value in the described range is also included in the present invention. The upper and lower limits of these smaller ranges can be independently included or excluded in the scope.

[0032] Unless otherwise indicated, all technical and scientific terms used herein have the same meanings as those generally understood by those skilled in the art. Although the present invention describes only preferred methods and materials, any methods and materials similar or equivalent to those described herein may also be used in the implementation or testing of the present invention. All documents mentioned in this specification are incorporated by reference to disclose and describe the methods and / or materials associated with the documents. In the event of a conflict with any incorporated document, the content of this specification shall prevail.

[0033] It will be apparent to those skilled in the art that various modifications and variations may be made to the specific embodiments of the present invention description without departing from the scope or spirit of the present invention. Other embodiments derived from the present invention description will be apparent to the skilled artisan. The present invention description and examples are exemplary only.

[0034] The words “include,” “including,” “have,” “contain,” etc. used in this document are open-ended terms, meaning including but not limited to.

[0035] The conversion bridge distribution strategy proposed in the present invention is to select an elastomer with high compatibility and an organic semiconductor with strong interaction with active metal ions (such as aluminum ions, silver ions, copper ions, etc.), and prepare an organic functional layer with a phase separation structure close to thermodynamic equilibrium through simple physical blending. By further adjusting the content of organic semiconductor materials in the functional layer, the type of conductive path in the functional layer is precisely controlled, and dual-modal neuromorphic signal processing is realized in the same material system. The content of organic semiconductor materials in the organic functional layer will have a significant impact on the mechanical and electrical properties of the functional layer. At a suitable ratio, the functional layer exhibits excellent mechanical properties, has a high elongation at break and good elasticity. At the same time, the electrical behavior of the memristor constructed based on this is closely related to the content of organic semiconductor materials. By adjusting the content of organic semiconductor materials, both volatile and non-volatile electrical behaviors can be achieved in the same system, and in subsequent tensile cycle tests, the electrical performance can be cyclically stretched 1000 times at 100% strain without degradation. The volatile and non-volatile modes of multifunctional organic memristors based on the conversion bridge distribution strategy were integrated into the linear regression layer of the dynamic neural network and the reservoir computing (RC), respectively, demonstrating a fully analog RC hardware system that successfully achieved the high-precision detection task of online arrhythmia.

[0036] The technical solution of the present invention is as follows:

[0037] The first aspect of the present invention provides an organic functional layer, comprising an organic semiconductor material and an elastomeric material; the organic semiconductor material is selected from at least one of poly[2,5-bis(3-tetradecylthiophene-2-yl)thiophene], poly(3,5-pyridine), poly(N-vinylcarbazole), polycarbazole phosphate and triphenyl phosphate; the elastomeric material is selected from at least one of polystyrene-block-polyethylene(ethylene-ran-butylene)-block-polystyrene, polystyrene butadiene copolymer, polyisobutylene and chloroprene rubber;

[0038] The organic semiconductor material accounts for 5-50 wt % of the total of the organic semiconductor material and the elastomer material.

[0039] The organic semiconductor material provided by the present invention has high compatibility with the elastomer material, and the selected organic semiconductor material needs to have strong interaction with active ions such as aluminum ions, silver ions, and copper ions. Using different blending ratios of organic semiconductor materials and elastomers, the electrical and mechanical properties of the resulting organic functional layer will change with the change of the blending ratio.

[0040] A second aspect of the present invention provides a multifunctional organic memristor based on a conversion bridge distribution strategy, comprising the organic functional layer described in the above technical solution.

[0041] In some embodiments of the present invention, the multifunctional organic memristor based on the conversion bridge distribution strategy further includes a bottom electrode and a top electrode; and the organic functional layer is located between the bottom electrode and the top electrode.

[0042] In some embodiments of the present invention, the thickness of the bottom electrode is 30 nm; the thickness of the organic functional layer is 30-50 nm; and the thickness of the top electrode is 30 nm.

[0043] In the present invention, a too thin functional layer is easy to break down and cause device damage, while a too thick functional layer exhibits a single resistance state, and an external bias voltage is difficult to drive the migration of conductive materials in the functional layer. Therefore, the thickness of the organic functional layer in the present invention is preferably within the above parameter range.

[0044] In some embodiments of the present invention, the bottom electrode is an active metal electrode, such as an aluminum electrode, a silver electrode or a copper electrode; and the top electrode is an inert metal electrode, such as a gold electrode or a platinum electrode.

[0045] A third aspect of the present invention provides a method for preparing a multifunctional organic memristor based on the conversion bridge distribution strategy described in the above technical solution, comprising the following steps:

[0046] Step 1, preparing a bottom electrode on a substrate by vacuum evaporation;

[0047] Step 2, dissolving the organic semiconductor material and the elastomer material in a solvent, coating the resulting solution on the surface of the bottom electrode, and then annealing to obtain an organic functional layer;

[0048] Step 3: prepare a top electrode on the organic functional layer by vacuum evaporation.

[0049] The present invention does not impose any special limitation on the choice of substrate material, and any conventional substrate material in the art may be used, for example, heavily doped n-type single crystal silicon or glass with 300nm SiO2 thermally grown on the surface.

[0050] In some embodiments of the present invention, in step 1, the parameters of the vacuum evaporation method are set to: the vacuum evaporation rate is

[0051] In step 2, the total concentration of the organic semiconductor material and the elastomeric material in the solution is 8-10 mg / mL.

[0052] In step 3, the parameters of the vacuum evaporation method are set as follows: the vacuum evaporation rate is

[0053] In some embodiments of the present invention, the annealing temperature is 90-120° C. and the time is 20 min.

[0054] A fourth aspect of the present invention provides an application of the above-mentioned multifunctional organic memristor based on the conversion bridge distribution strategy in biocompatible wearable devices and artificial intelligence.

[0055] In order to better understand the present invention, the content of the present invention is further explained below in conjunction with the embodiments, but the content of the present invention is not limited to the following embodiments.

[0056] The structural diagram of the multifunctional organic memristor based on the conversion bridge distribution strategy is shown in Figure 1 As shown in the figure, the top electrode is an inert electrode, the bottom electrode is an active electrode, Elastomer refers to an elastomer, and Semiconductor refers to an organic semiconductor that has a strong interaction with active ions such as aluminum ions, silver ions, and copper ions.

[0057] The substrate materials used in the embodiments are all heavily doped n-type single crystal silicon with 300nm SiO2 thermally grown on the surface.

[0058] Example 1

[0059] The organic semiconductor material of this embodiment is poly[2,5-bis(3-tetradecylthiophene-2-yl)thiophene] (PBTTT, CAS: 888491-19-8, Lot No.: Alpha A491198), and the elastomer is polystyrene-block-polyethylene (ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aladdin 200557).

[0060] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0061] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0062] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0063] 3) After the organic semiconductor material PBTTT and the elastomer SEBS are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution, wherein the total concentration of the organic semiconductor material PBTTT and the elastomer SEBS in the mixed solution is 8 mg / mL;

[0064] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer (abbreviated as EDCB) with a thickness of 30 nm;

[0065] Among them, the surface morphology of the organic functional layer is as follows Figure 3 As shown in the figure, in the vertical direction, the organic semiconductor material PBTTT is continuously distributed in the film based on the elastomer SEBS. Figure 4 As shown, when the organic semiconductor material PBTTT accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material and the elastomer, that is, when the organic functional layer is represented by EDCB-5 to EDCB-50, the elongation at break of the organic functional layer is higher than 250%, far exceeding the requirement of 100% elongation at break in current practical applications. In addition, when the organic semiconductor material PBTTT accounts for 10wt% of the total amount of the organic semiconductor material and the elastomer, that is, when the organic functional layer is represented by EDCB-10, the elongation at break is higher than 300%, and the elastic recovery rate is maintained above 95% under all strains, with excellent elasticity and toughness;

[0066] 5) Covering the organic functional layer with a mask, vacuum evaporating a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, thereby obtaining a multifunctional organic memristor.

[0067] The electrical properties of multifunctional organic memristors are Figure 5 , 6As shown in Figures 8, on the one hand, by finely adjusting the content of organic semiconductor material PBTTT in the blended film, both volatile and non-volatile electrical behaviors can be achieved in the same system: the organic memristor based on EDCB-5 and EDCB-10 blended films exhibits erasable non-volatile electrical behavior, and when the content of organic semiconductor material PBTTT is further increased to 50wt% of the total amount of organic semiconductor material and elastomer, the organic memristor based on EDCB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical properties of EDCB-10 blended film remain unchanged under loading and unloading of different strains within the strain range of 100%, and the electrical properties of the blended film can remain unchanged after 1000 cycles of stretching under 100% strain.

[0068] Example 2

[0069] The organic semiconductor material of this embodiment is poly(3,5-pyridine) (P35P, CAS: 97702-63-1, Lot No.: Sigma-Aldrich 590487), and the elastomer is polystyrene butadiene copolymer (SBR, CAS: 9003-55-8, Lot No.: Sigma-Aldrich 430072).

[0070] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0071] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0072] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0073] 3) After the organic semiconductor material P35P and the elastomer SBR are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution (the organic semiconductor material P35P accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material P35P and the elastomer SBR, and the total concentration of the organic semiconductor material P35P and the elastomer SBR in the mixed solution is 8 mg / mL);

[0074] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer (abbreviated as EDCB) with a thickness of 30 nm;

[0075] 5) Covering the organic functional layer with a mask, vacuum evaporating a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, thereby obtaining a multifunctional organic memristor.

[0076] The multifunctional organic memristor of this embodiment was subjected to the same electrical performance test as that in Example 1, and the test results were similar to those in Example 1. On the one hand, by finely adjusting the content of organic semiconductor material P35P in the blended film, both volatile and non-volatile electrical behaviors can be achieved in the same system: the organic memristor based on EDCB-5 and EDCB-10 blended films exhibits erasable non-volatile electrical behavior, and when the content of organic semiconductor material P35P is further increased to 50wt% of the total amount of organic semiconductor material and elastomer, the organic memristor based on EDCB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical properties of EDCB-10 blended film remain unchanged under different strains when loaded and unloaded within the range of 100% strain, and the electrical properties of the blended film can remain unchanged after 1000 cycles of stretching at 100% strain.

[0077] Example 3

[0078] The organic semiconductor material of this embodiment is triphenyl phosphate (TPP, CAS: 115-86-6, Lot No.: Aladdin 241288), and the elastomer is chloroprene rubber (CR, CAS: 9010-98-4, Lot No.: Sigma-Aldrich 205397).

[0079] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0080] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0081] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0082] 3) After the organic semiconductor material TPP and the elastomer CR are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution (the organic semiconductor material TPP accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material TPP and the elastomer CR, and the total concentration of the organic semiconductor material TPP and the elastomer CR in the mixed solution is 8mg / mL);

[0083] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer (abbreviated as EDCB) with a thickness of 30 nm;

[0084] 5) Covering the organic functional layer with a mask, vacuum evaporating a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, thereby obtaining a multifunctional organic memristor.

[0085] The multifunctional organic memristor of this embodiment was subjected to the same electrical performance test as that in Example 1, and the test results were similar to those in Example 1. On the one hand, by finely adjusting the TPP content of the organic semiconductor material in the blended film, both volatile and non-volatile electrical behaviors can be achieved in the same system: the organic memristor based on the blended film of EDCB-5 and EDCB-10 exhibits erasable non-volatile electrical behavior, and when the TPP content of the organic semiconductor material is further increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the EDCB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical properties of the EDCB-10 blended film remain unchanged under different strains when loaded and unloaded within the range of 100% strain, and the electrical properties of the blended film can remain unchanged after 1000 cycles of stretching at 100% strain.

[0086] Example 4

[0087] The organic semiconductor material of this embodiment is polycarbazole phosphate (Poly-2PACz, Lot No.: Derthon P0690), and the elastomer is polystyrene-block-polyethylene (ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aladdin 200557).

[0088] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0089] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0090] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0091] 3) After the organic semiconductor material Poly-2PACz and the elastomer SEBS are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution (the organic semiconductor material Poly-2PACz accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material Poly-2PACz and the elastomer SEBS, and the total concentration of the organic semiconductor material Poly-2PACz and the elastomer SEBS in the mixed solution is 8 mg / mL);

[0092] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer (abbreviated as EDCB) with a thickness of 40 nm;

[0093] 5) Covering the organic functional layer with a mask, vacuum evaporating a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, thereby obtaining a multifunctional organic memristor.

[0094] The multifunctional organic memristor of this embodiment was subjected to the same electrical performance test as that in Example 1, and the test results were similar to those in Example 1. On the one hand, by finely adjusting the content of the organic semiconductor material Poly-2PACz in the blended film, both volatile and non-volatile electrical behaviors can be achieved in the same system: the organic memristor based on the blended film of EDCB-5 and EDCB-10 exhibits erasable non-volatile electrical behavior, and when the content of the organic semiconductor material Poly-2PACz is further increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the EDCB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical properties of the EDCB-10 blended film remain unchanged under different strains when loaded and unloaded within the range of 100% strain, and the electrical properties of the blended film can remain unchanged after 1000 cycles of stretching at 100% strain.

[0095] Example 5

[0096] The organic semiconductor material of this embodiment is poly(N-vinyl carbazole) (PVK, CAS: 25067-59-8, Lot No.: Aladdin 368350), and the elastomer is chloroprene rubber (CR, CAS: 9010-98-4, Lot No.: Sigma-Aldrich 205397).

[0097] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0098] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0099] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0100] 3) After the organic semiconductor material PVK and the elastomer CR are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution (the organic semiconductor material PVK accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material PVK and the elastomer CR, and the total concentration of the organic semiconductor material PVK and the elastomer CR in the mixed solution is 8mg / mL);

[0101] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer (abbreviated as EDCB) with a thickness of 40 nm;

[0102] 5) Covering the organic functional layer with a mask, vacuum evaporating a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, thereby obtaining a multifunctional organic memristor.

[0103] The multifunctional organic memristor of this embodiment was subjected to the same electrical performance test as that in Example 1, and the test results were similar to those in Example 1. On the one hand, by finely adjusting the content of the organic semiconductor material PVK in the blended film, both volatile and non-volatile electrical behaviors can be achieved in the same system: the organic memristor based on the blended film of EDCB-5 and EDCB-10 exhibits erasable non-volatile electrical behavior, and when the content of the organic semiconductor material PVK is further increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the EDCB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical properties of the EDCB-10 blended film remain unchanged under different strains when loaded and unloaded within the range of 100% strain, and the electrical properties of the blended film can remain unchanged after 1000 cycles of stretching at 100% strain.

[0104] Example 6

[0105] In this embodiment, the organic semiconductor material is polycarbazole phosphate (Poly-2PACz, Lot No.: Derthon P0690), and the elastomer is polystyrene butadiene copolymer (SBR, CAS: 9003-55-8, Lot No.: Sigma-Aldrich 430072).

[0106] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0107] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0108] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0109] 3) After the organic semiconductor material Poly-2PACz and the elastomer SBR are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution (the organic semiconductor material Poly-2PACz accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material Poly-2PACz and the elastomer SBR, and the total concentration of the organic semiconductor material Poly-2PACz and the elastomer SBR in the mixed solution is 8mg / mL);

[0110] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer (abbreviated as EDCB) with a thickness of 30 nm;

[0111] 5) Covering the organic functional layer with a mask, vacuum evaporating a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, thereby obtaining a multifunctional organic memristor.

[0112] The multifunctional organic memristor of this embodiment was subjected to the same electrical performance test as that in Example 1, and the test results were similar to those in Example 1. On the one hand, by finely adjusting the content of the organic semiconductor material Poly-2PACz in the blended film, both volatile and non-volatile electrical behaviors can be achieved in the same system: the organic memristor based on the blended film of EDCB-5 and EDCB-10 exhibits erasable non-volatile electrical behavior, and when the content of the organic semiconductor material Poly-2PACz is further increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the EDCB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical properties of the EDCB-10 blended film remain unchanged under different strains when loaded and unloaded within the range of 100% strain, and the electrical properties of the blended film can remain unchanged after 1000 cycles of stretching at 100% strain.

[0113] Example 7

[0114] The organic semiconductor material of this embodiment is poly(N-vinyl carbazole) (PVK, CAS: 25067-59-8, Lot No.: Aladdin 368350), and the elastomer is polyisobutylene (PIB, CAS: 9003-27-4, Lot No.: J&K918785).

[0115] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0116] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0117] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0118] 3) After the organic semiconductor material PVK and the elastomer PIB are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution (the organic semiconductor material PVK accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material PVK and the elastomer PIB, and the total concentration of the organic semiconductor material PVK and the elastomer PIB in the mixed solution is 8mg / mL);

[0119] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer (abbreviated as EDCB) with a thickness of 40 nm;

[0120] 5) Covering the organic functional layer with a mask, vacuum evaporating a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, thereby obtaining a multifunctional organic memristor.

[0121] The multifunctional organic memristor of this embodiment was subjected to the same electrical performance test as that in Example 1, and the test results were similar to those in Example 1. On the one hand, by finely adjusting the content of the organic semiconductor material PVK in the blended film, both volatile and non-volatile electrical behaviors can be achieved in the same system: the organic memristor based on the blended film of EDCB-5 and EDCB-10 exhibits erasable non-volatile electrical behavior, and when the content of the organic semiconductor material PVK is further increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the EDCB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical properties of the EDCB-10 blended film remain unchanged under different strains when loaded and unloaded within the range of 100% strain, and the electrical properties of the blended film can remain unchanged after 1000 cycles of stretching at 100% strain.

[0122] Example 8

[0123] The organic semiconductor material of this embodiment is triphenyl phosphate (TPP, CAS: 115-86-6, Lot No.: Aladdin 241288), and the elastomer is polystyrene-block-polyethylene (ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aladdin 200557).

[0124] The preparation steps of the multifunctional organic memristor based on the conversion bridge distribution strategy are as follows:

[0125] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0126] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0127] 3) After the organic semiconductor material TPP and the elastomer SEBS are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution (the organic semiconductor material TPP accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material TPP and the elastomer SEBS, and the total concentration of the organic semiconductor material TPP and the elastomer SEBS in the mixed solution is 8mg / mL);

[0128] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer (abbreviated as EDCB) with a thickness of 40 nm;

[0129] 5) Covering the organic functional layer with a mask, vacuum evaporating a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm, thereby obtaining a multifunctional organic memristor.

[0130] The multifunctional organic memristor of this embodiment was subjected to the same electrical performance test as that in Example 1, and the test results were similar to those in Example 1. On the one hand, by finely adjusting the TPP content of the organic semiconductor material in the blended film, both volatile and non-volatile electrical behaviors can be achieved in the same system: the organic memristor based on the blended film of EDCB-5 and EDCB-10 exhibits erasable non-volatile electrical behavior, and when the TPP content of the organic semiconductor material is further increased to 50wt% of the total amount of the organic semiconductor material and the elastomer, the organic memristor based on the EDCB-50 blended film exhibits volatile electrical behavior; on the other hand, the electrical properties of the EDCB-10 blended film remain unchanged under different strains when loaded and unloaded within the range of 100% strain, and the electrical properties of the blended film can remain unchanged after 1000 cycles of stretching at 100% strain.

[0131] Comparative Example 1

[0132] The organic semiconductor material of this comparative example is polydithiophene-pyrrolopyrrole diketo (DPPT-TT, CAS: 1260685-66-2, Lot No.: Shenzhen Ruixun P1128), and the elastomer is polystyrene-block-polyethylene (ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aladdin 200557).

[0133] The steps for preparing organic memristor are as follows:

[0134] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0135] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0136] 3) After the organic semiconductor material DPPT-TT and the elastomer SEBS are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain mixed solutions (the organic semiconductor material DPPT-TT accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material DPPT-TT and the elastomer SEBS, and the total concentration of the organic semiconductor material DPPT-TT and the elastomer SEBS in the mixed solution is 8 mg / mL);

[0137] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer with a thickness of 30 nm;

[0138] Due to the poor compatibility between DPPT-TT and SEBS, when the organic semiconductor material DPPT-TT accounts for 5-50wt% of the total amount of the organic semiconductor material and the elastomer, the blended films all form a vertical layered structure in which DPPT-TT is enriched in the surface layer and the bottom layer;

[0139] 5) Then, a mask is covered on the organic functional layer to vacuum evaporate a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm to obtain a complete device.

[0140] After fine-tuning the content of organic semiconductor material DPPT-TT in the blended film, it was observed that the devices based on the blended film with a ratio of 5%-50% all showed a single resistance value, such as Fig.10 As shown, no memristive behavior was observed.

[0141] This example proves that when the compatibility between the organic semiconductor and the elastomer is poor, the organic layer presents a longitudinally layered phase separation structure, resulting in the organic layer having no memristive function.

[0142] Comparative Example 2

[0143] The organic semiconductor material of this comparative example is poly(9,9-dioctylfluorene-2,7-diyl) (PF8, CAS: 19456-48-5, Lot No.: Shenzhen Ruixun P0421), and the elastomer is polystyrene-block-polyethylene (ethylene-ran-butylene)-block-polystyrene (SEBS, CAS: 66070-58-4, Lot No.: Aladdin 200557).

[0144] The steps for preparing organic memristor are as follows:

[0145] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0146] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0147] 3) After the organic semiconductor material PF8 and the elastomer SEBS are dissolved separately to form solutions, the solutions are mixed at 100° C. to obtain a mixed solution (the organic semiconductor material PF8 accounts for 5wt%, 10wt%, 15wt%, 20wt%, and 50wt% of the total amount of the organic semiconductor material PF8 and the elastomer SEBS, and the total concentration of the organic semiconductor material PF8 and the elastomer SEBS in the mixed solution is 8 mg / mL);

[0148] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain an organic functional layer with a thickness of 30 nm;

[0149] Due to the good compatibility between PF8 and SEBS, when the organic semiconductor material PF8 accounts for 5-50wt% of the total amount of the organic semiconductor material and the elastomer, the blended films all form a PF8 longitudinally continuous distribution structure;

[0150] 5) Then, a mask is covered on the organic functional layer to vacuum evaporate a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm to obtain a complete device.

[0151] After fine-tuning the content of organic semiconductor material PF8 in the blended film, it was observed that most devices based on the 5%-50% blended film exhibited a single resistance value, and only a small number of devices exhibited WORM-type or Flash-type electrical behavior, such as Fig.11As shown, this is because there is no interaction force between PF8 and active aluminum ions, and it cannot play the role of a conversion bridge. It can only rely on the random migration of aluminum ions themselves in the functional layer to form a conductive path and then realize the transition of the resistance state. Therefore, the device yield is extremely low (less than 10%).

[0152] This example proves that when there is no interaction force between organic semiconductors and active metal ions, even if the organic semiconductor material is in a continuous distribution structure in the elastomer matrix, the organic semiconductor material cannot act as a conversion bridge, the migration and conversion of active metal ions lack guidance and are full of randomness, so the device yield is extremely low.

[0153] Comparative Example 3

[0154] The conductive material of this comparative example is gallium-indium alloy (liquid metal, CAS: wl-2018130006, Lot No.: Aladdin G393020), and the elastomer is asymmetric monohydrogen-terminated polydimethylsiloxane (PDMS, CAS: 1038821-58-7, Lot No.: Merrell MER-MCR-H07).

[0155] The steps for preparing a memristor are as follows:

[0156] 1) The substrate was ultrasonically cleaned with water, acetone, and isopropanol in sequence, with each solvent ultrasonically cleaned twice for 10 minutes each time, and then dried with nitrogen and dried in an oven at 120°C for 5 minutes;

[0157] 2) Covering the substrate with a mask, vacuum evaporating 30nm thick active metal aluminum as the bottom electrode, wherein the mask is a crossbar type electrode with a line width of 50μm and a line spacing of 750μm;

[0158] 3) Conductive material liquid metal gallium indium alloy is dispersed in the elastomer PDMS solution (the liquid metal accounts for 5wt%, 10wt%, 15wt%, 20wt%, 50wt% of the total amount of liquid metal and elastomer PDMS);

[0159] 4) In an inert atmosphere, the mixed solution was spin-coated on the substrate on which the bottom electrode had been evaporated at a rotation speed of 1000 rpm, and the obtained film was annealed at 100° C. for 20 minutes to obtain a functional layer with a thickness of 30 nm;

[0160] Since the conductive material liquid metal and the elastomer PDMS have different chemical properties and molecular structures, when the conductive material liquid metal accounts for 5-50wt% of the total amount of the conductive material and the elastomer, the blended film forms a dispersed structure that is far from the thermodynamic equilibrium and unstable;

[0161] 5) Cover the functional layer with a mask and vacuum-evaporate a 30 nm thick inert metal gold as a top electrode, wherein the mask is a crossbar type electrode with a line width of 50 μm and a line spacing of 750 μm to obtain a complete device.

[0162] After fine-tuning the content of the conductive liquid metal in the blended film, it was observed that the device based on the 5%-50% blended film had WORM-type electrical behavior, but the device performance was not stable during the test, which may be caused by the movement of the liquid metal droplets. Even though the elastomer has been cross-linked, it is still unable to suppress the aggregation of liquid metal droplets. The device was short-circuited after being stored at room temperature for 5 days. Fig.12 shown.

[0163] This example proves that when the dispersed structure formed by the two components of the conductive material and the elastomer is far from the thermodynamic equilibrium and unstable, the structure of the functional layer will change over time, resulting in unstable electrical performance of the memristor constructed based on this structure.

[0164] It can be seen from Comparative Examples 1-3 that the present invention requires the use of a conversion bridge distribution strategy to select an elastomer with high compatibility and an organic semiconductor that has a strong interaction with active ions (such as aluminum ions, silver ions, and copper ions).

[0165] The preparation method of the multifunctional organic memristor based on the conversion bridge distribution strategy disclosed and proposed by the present invention can be realized by those skilled in the art by referring to the content of this article and appropriately changing the conditions, routes and other links. Although the method and preparation technology of the present invention have been described through preferred embodiments, relevant technicians can obviously modify or recombine the methods and technical routes described in this article without departing from the content, spirit and scope of the present invention to realize the final preparation technology. It should be particularly pointed out that all similar substitutions and modifications are obvious to those skilled in the art, and they are all considered to be included in the spirit, scope and content of the present invention.

Claims

1. An organic functional layer, characterized in that: The invention comprises an organic semiconductor material and an elastomeric material; the organic semiconductor material is selected from at least one of poly[2,5-bis(3-tetradecylthiophene-2-yl)thiophene], poly(3,5-pyridine), poly(N-vinylcarbazole), polycarbazole phosphate and triphenyl phosphate; the elastomeric material is selected from at least one of polystyrene-block-polyethylene(ethylene-ran-butylene)-block-polystyrene, polystyrene butadiene copolymer, polyisobutylene and chloroprene rubber; The organic semiconductor material accounts for 5-50 wt % of the total of the organic semiconductor material and the elastomer material.

2. A multifunctional organic memristor based on a conversion bridge distribution strategy, characterized in that: The organic functional layer comprises the organic functional layer as claimed in claim 1.

3. The multifunctional organic memristor based on the conversion bridge distribution strategy according to claim 2, characterized in that: It also includes a bottom electrode and a top electrode; the organic functional layer is located between the bottom electrode and the top electrode.

4. The multifunctional organic memristor based on the conversion bridge distribution strategy according to claim 3 is characterized in that: The thickness of the bottom electrode is 30 nm; the thickness of the organic functional layer is 30-50 nm; and the thickness of the top electrode is 30 nm.

5. The multifunctional organic memristor based on the conversion bridge distribution strategy according to claim 3 or 4, characterized in that: The bottom electrode is an active metal electrode; the top electrode is an inert metal electrode.

6. A method for preparing a multifunctional organic memristor based on a conversion bridge distribution strategy as claimed in any one of claims 2 to 5, characterized in that: The following steps are involved: Step 1, preparing a bottom electrode on a substrate by vacuum evaporation; Step 2, dissolving the organic semiconductor material and the elastomer material in a solvent, coating the resulting solution on the surface of the bottom electrode, and then annealing to obtain an organic functional layer; Step 3: prepare a top electrode on the organic functional layer by vacuum evaporation.

7. The method for preparing a multifunctional organic memristor based on a conversion bridge distribution strategy according to claim 6, characterized in that: In step 1, the parameters of the vacuum evaporation method are set as follows: the vacuum evaporation rate is In step 2, the total concentration of the organic semiconductor material and the elastomeric material in the solution is 8-10 mg / mL; In step 3, the parameters of the vacuum evaporation method are set as follows: the vacuum evaporation rate is 8. The method for preparing a multifunctional organic memristor based on a conversion bridge distribution strategy according to claim 6, characterized in that: The annealing temperature is 90-120° C. and the annealing time is 20 min.

9. Application of the multifunctional organic memristor based on the conversion bridge distribution strategy according to any one of claims 2 to 5 in biocompatible wearable devices and artificial intelligence.

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